JPH0249453A - Cap for semiconductor device - Google Patents

Abstract

PURPOSE:To protect data in a semiconductor device from accidental erasure by shielding the device from magnetism or electromagnetic waves by a method wherein a cap for a semiconductor device is a double structure of an amorphous metal thin plate and a thin substrate made of a crystalline material. CONSTITUTION:A cap A is a double structure of an amorphous metal thin plate 1 and a thin substrate 2 made of a crystalline material. The cap A is so designed as to detachably cover the upper surface and the circumference of a semiconductor device B, and for this purpose the four sides of the ceiling 3 of the cap A are bent down for the formation of side panes 4. The side panes 4 hold the entirety of the side walls 5 of the metal thin plate 1 by applying holders 7 which are side walls 6 of the thin substrate 2. At the ends of the shorter of the side panes 4, there are engaging sections 8 formed by press- forming the ends of the substrate 2 into jaws. This design shields a semiconductor device from magnetism and electromagnetic waves, protecting the data therein from accidental erasure.

Description

[Detailed description of the invention] (Industrial application field) The present invention relates to a semiconductor cap.

(Prior art) For example, there is a light-shielding cover film, which is used to mask the window of a semiconductor device to prevent ultraviolet rays from entering through the window, thereby preventing programmed data from being erased by ultraviolet rays.

(Problem to be Solved by the Invention) By the way, there is a problem that the content of data programmed in semiconductors can be erased by magnetic and electromagnetic waves, and at present no countermeasures have been taken against these magnetic and electromagnetic waves. be.

On the other hand, amorphous metal, which is an amorphous material, is used in semiconductor factories and IF device factories due to its excellent high magnetic permeability.

It can be used as a magnetic shielding material for buildings such as magnetic measurement research facilities.

Therefore, regarding magnetic shielding, instead of using an indirect method in which the entire building has a magnetic shielding structure, it is possible to cover the semiconductor itself with an amorphous metal and provide direct magnetic shielding.

However, there is a problem in that the high strength and toughness, which are one of the excellent properties of amorphous metals, and high hardness act as drawbacks.

That is, when the cap is bent and formed into a cap shape having a top plate, side plates, and a hooking part, the bent portions at the corners tend to tear and break, and internal stress is generated, resulting in a decrease in magnetic permeability and corrosion resistance.

In addition, in order to avoid deterioration of magnetic permeability and corrosion resistance, attempts were made to bend the corner portions with a radius, but the springback caused by the excellent high strength and toughness was too strong, making the original plate shape less elastic. It returned and did not take the cap shape.

It is also possible to bury a plate-shaped amorphous metal in the upper surface of the semiconductor, but if you want to actively erase the programmed data, the buried amorphous metal will be an obstacle. Since the sides of semiconductors are vulnerable to magnetic and electromagnetic waves, there remains a concern about erasure, and in the end, it was impossible to directly magnetically shield semiconductors.

Therefore, the inventor focused on combining amorphous metal, which is an amorphous material, and crystalline material, and bonded an amorphous metal thin plate cut and formed into the expanded shape of the cap and a thin substrate made of crystalline material. The mixture was polymerized in one piece, dried, and then pressed to form a cap shape.

However, while the crystalline material plastically deforms into the desired irregular shape at the bend as predicted, the amorphous metal suffers from its high strength and toughness and peels off from the adhesive surface at the bend. It didn't take on a cap shape.

In addition, it was confirmed that in the bonded cap, the thermal expansion and contraction of the crystalline material affects the amorphous metal, resulting in a decrease in the properties of the amorphous, such as soft magnetism and magnetostriction.

The present invention was made in view of the above circumstances, and its purpose is to provide a cap for semiconductors that has a desired cap shape, is detachable from a semiconductor, and is capable of shielding magnetic and electromagnetic waves. It is intended to provide a cap.

(Means for Solving the Problems) The semiconductor cap of the present invention has a double structure of an amorphous metal thin plate and a crystalline material thin substrate, and each of the four bent side plate portions of the top plate portion is , the entire side wall portion of the amorphous metal thin plate is sandwiched and held by gripping portions that are side wall portions of the thin substrate, and a jaw-shaped engaging portion is formed at the tip of the side plate portion.

The amorphous metal in the present invention includes various alloys, and is also selected from those coated with copper plating, etc., which enhances the electromagnetic wave shielding effect.

Further, the amorphous metal thin plate may be in the form of two or more layers, which is effective in improving shielding efficiency.

The target crystalline materials are metals that have good plastic deformation, but compared to general metals, they have better magnetic permeability, magnetostriction, iron loss, ^frequency magnetic properties,! ! Examples of high-performance magnetic thin steel sheets that have excellent in-situ cooling effects (however, they are inferior to amorphous metals) include silicon steel sheets and the like.

(Function) The thin substrates made of crystalline material in the top plate, side plates, and hooking portions are plastically deformed and take on the shape of a cap, and their gripping portions sandwich and grip the entire side wall portion of the amorphous metal thin plate, thereby creating the same cap. The shape is held by an amorphous metal thin plate.

Thin substrate and amorphous gold in the top and side panels
It has a superposition relationship with the A thin plate that does not interfere with each other in the plane direction.

(Example) An example of implementation of the present invention will be described in detail below with reference to the drawings.

1 to 4 illustrate the semiconductor cap of the present invention, and this cap (A) has a double structure of an amorphous metal thin plate (1) and a crystalline material thin substrate (2). Side plate portions (4) are formed by bending on each side of the top plate portion (3) so as to be able to be attached to the semiconductor (B) so as to cover the upper surface and peripheral side surfaces thereof.

Each side plate part (4) is made of amorphous gold R thin plate (1).
The entire side wall portion (5) of the thin substrate (2) is
) is held between the gripping parts (7). Specifically, the outer part (7a) of the grip part (7) is pressed.
) is folded back to the surface of the side wall (5) and held between them, and this gripping part (7) is formed by bending the tip of the outer part (7a) together with the side wall (5) as a valley.

Further, the side plate portion (4) on the long side of the semiconductor (B) facing the side surface on which the bottles (B+) are arranged in parallel is designed to such an extent that its lower end does not touch the bottles (8+).

In addition, a thin substrate (
2) The engaging part (8
) is formed.

The engaging portion (8) has a finger hook portion (9) that extends outward, and by pushing the finger hook portion (9) closer to the side plate portion (4), it is attached to the semiconductor (B). Makes it easy to put on and take off.

FIG. 6 shows a semiconductor cap (A) according to another embodiment. This cap (A) has basically the same structure as that of the previous embodiment, and the difference is that the side plate part (4) is Outer part (1
a) The tip is bent to form a peak.

Further, in the above embodiment, the engaging portions (8) are formed on both side surfaces (4) of the short side, but it is also possible to form them only on one side.

Also, regarding the steel plate part (4) on the bottle (B+) side, the steel plate part (4) on the bottle (B+) side is
The side plate portion (10) at position B+) may be spaced apart so as not to touch the bottle (B1).

(Figure 7) (Effect of the invention) Therefore, the present invention has the following advantages.

■ It has a cap shape consisting of a top plate part and a steel plate part with a double structure of a W2N plate made of crystalline material and an amorphous metal thin plate, and the semiconductor is magnetically and
It can shield electromagnetic waves and eliminate accidents such as data being inadvertently erased.

■ Amorphous gold WVI in the top plate and copper plate
Due to the double structure in which the J plate and the i1 substrate made of crystalline material do not interfere with each other in the direction along the plane,
Thermal expansion and contraction of the thin substrate does not reach that of amorphous metal, and the characteristics of amorphous metal can be maintained and the original shielding effect can be maintained.

■ The amorphous metal thin plate portion at the bent portion of each side plate has the minimum required bending angle, and only a small amount of internal stress is generated in the same portion, which has almost no effect on the shielding effect.

(2) The amorphous metal absorbs heat from the semiconductor, dissipates it, and protects the semiconductor by preventing external pressure.

(2) It can be easily attached and detached by attaching and detaching the hooking part to the semiconductor, and it has the flexibility of being detachable and erasing data at will.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a plan view showing an embodiment of the semiconductor cap of the present invention. FIG. 2 is a sectional view taken along line 1-1. Figure 3 is the (P) of Figure 2.
) Enlarged cross-sectional view in the direction of arrows. FIG. 4 is an enlarged sectional view of rV-IV. FIG. 5 is a reduced perspective view of an amorphous metal thin plate and a thin substrate. FIG. 6 is a partially enlarged sectional view of a cap of another embodiment. FIG. 7 is a partially enlarged sectional view of a cap of another embodiment. FIG. 8 is a partially cutaway, reduced perspective view showing the cap shown in FIG. 1 attached to a semiconductor. In the figure (1), the amorphous metal thin plate is made of a crystalline material.

Claims (1)

[Claims] It has a double structure of an amorphous thin metal plate and a thin substrate made of a crystalline material, and each of the four bent side plates of the top plate grips the entire side wall of the amorphous metal thin plate, which is the side wall of the thin substrate. A cap for semiconductors that is held between two parts and has a jaw-like engaging part formed at the tip of the side plate part.