JPH0248511B2 - - Google Patents
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- Publication number
- JPH0248511B2 JPH0248511B2 JP60142498A JP14249885A JPH0248511B2 JP H0248511 B2 JPH0248511 B2 JP H0248511B2 JP 60142498 A JP60142498 A JP 60142498A JP 14249885 A JP14249885 A JP 14249885A JP H0248511 B2 JPH0248511 B2 JP H0248511B2
- Authority
- JP
- Japan
- Prior art keywords
- powder
- weight
- parts
- particle size
- average particle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000843 powder Substances 0.000 claims description 23
- 239000002245 particle Substances 0.000 claims description 15
- 239000011863 silicon-based powder Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 5
- 239000011362 coarse particle Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体拡散炉の構成部材の製造方法に
関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing components of a semiconductor diffusion furnace.
従来の技術
特公昭54−10825号公報は半導体拡散炉の構成
部材を示している。この従来例にあつては、0.1
〜8μの平均粒径を有する微粒と、30〜170μの平
均粒径を有する粗粒からなるSiC粉末の焼結体に
よつて焼結SiCマトリツクスが形成されている。Prior Art Japanese Patent Publication No. 54-10825 shows constituent members of a semiconductor diffusion furnace. In this conventional example, 0.1
A sintered SiC matrix is formed of a sintered body of SiC powder consisting of fine particles having an average particle size of ~8μ and coarse particles having an average particle size of 30 to 170μ.
発明が解決しようとする問題点
前述の半導体拡散炉の構成部材にあつては、特
に微粒のSiC粉末が0.1〜8μの平均粒径を有するた
め、粉末全体としてみたときSiC粉末の表面積が
非常に大きくなり、その結果として、不純物が混
入しやすい。通常は、粗粒のSiC粉末を粉砕する
のであるが、そのような粉砕工程において不純物
が入りやすいのである。この時、不純物の混入を
避けるためには、特別な処理操作が必要であり、
生産コストを高くする欠点がある。Problems to be Solved by the Invention In the components of the semiconductor diffusion furnace mentioned above, the surface area of the SiC powder is extremely large when viewed as a whole because the fine SiC powder has an average particle size of 0.1 to 8μ. As a result, impurities are likely to be mixed in. Usually, coarse-grained SiC powder is pulverized, but impurities are likely to enter in such a pulverization process. At this time, special processing operations are required to avoid contamination with impurities.
It has the disadvantage of increasing production costs.
発明の目的
この発明は前述のような従来技術の欠点を解消
して、処理操作が比較的容易で、しかも物理特性
の優れた半導体拡散炉構成部材の製造方法を提供
することを目的としている。OBJECTS OF THE INVENTION It is an object of the present invention to overcome the drawbacks of the prior art as described above, and to provide a method for manufacturing semiconductor diffusion furnace components that are relatively easy to process and have excellent physical properties.
発明の要旨
この目的を達成するために、この発明は30〜
170μの平均粒径を有するSiC粉末50〜90重量部
と、0.1〜8μの平均粒径を有するＣ粉末３〜15重
量部と、0.1〜8μの平均粒径を有するSi粉末７〜
35重量部とを混合焼成してなる半導体拡散炉の構
成部材の製造方法を要旨としている。SUMMARY OF THE INVENTION To achieve this objective, this invention
50 to 90 parts by weight of SiC powder having an average particle size of 170μ, 3 to 15 parts by weight of C powder having an average particle size of 0.1 to 8μ, and 7 to 90 parts by weight of Si powder having an average particle size of 0.1 to 8μ.
The gist of this article is a method for manufacturing a component of a semiconductor diffusion furnace by mixing and firing 35 parts by weight.
問題点を解決するための手段
この発明による半導体拡散炉の構成部材の製造
方法においては、SiC粉末は粗粒のみを使用し、
微粒は使用しない。すなわち、30〜170μの平均
粒径を有するSiC粉末を50〜90重量部使用するの
である。このSiC粉末に0.1〜8μの平均粒径を有す
るＣ粉末３〜15重量部と0.1〜8μの平均粒径を有
するSi粉末７〜35重量部を添加する。Means for Solving the Problems In the method for manufacturing components of a semiconductor diffusion furnace according to the present invention, only coarse particles of SiC powder are used;
Do not use granules. That is, 50 to 90 parts by weight of SiC powder having an average particle size of 30 to 170 μm is used. To this SiC powder are added 3 to 15 parts by weight of C powder having an average particle size of 0.1 to 8μ and 7 to 35 parts by weight of Si powder having an average particle size of 0.1 to 8μ.
Ｃ粉末が３重量部よりも少ないと、SiCの結合
力が小さく、強度が低下する。また、Ｃ粉末が15
重量部よりも大きいと、Siの含浸前に変形をおこ
しやすくなり、強度が低下する。 If the amount of C powder is less than 3 parts by weight, the bonding force of SiC will be small and the strength will be reduced. In addition, C powder is 15
If it is larger than the weight part, deformation is likely to occur before impregnation with Si, resulting in a decrease in strength.
Si粉末が７重量部よりも少ないと、SiCの結合
力が弱まり、強度が下がる。また、Si粉末の含有
量が35重量％よりも多いと、Siの含浸が困難とな
り、材質の均一性に欠けやすくなる。 When the amount of Si powder is less than 7 parts by weight, the bonding force of SiC is weakened and the strength is reduced. Furthermore, if the content of Si powder is more than 35% by weight, it becomes difficult to impregnate Si, and the material tends to lack uniformity.
Ｃ粉末とSi粉末の全体量が多すぎると、焼成時
に体積の減少が生じ変形の問題が起る。 If the total amount of C powder and Si powder is too large, the volume will decrease during firing, causing a problem of deformation.
前述のようなSiC粉末、Ｃ粉末およびSi粉末に
有機バインダーを加えて混練造粒し、ラバープレ
スにより成型してから焼成し、Siを含浸してケイ
化するのが一般的な製造方法である。また、HCl
によりパージをして純化を行なうと、より高品質
のものがえられる。 A common manufacturing method is to add an organic binder to the SiC powder, C powder, and Si powder as described above, knead and granulate it, mold it using a rubber press, and then sinter it to impregnate it with Si and silicify it. . Also, HCl
By purging and purifying, higher quality products can be obtained.
実施例
30〜170μの平均粒径を有するSiC粉末70重量部
と、0.1〜8μの平均粒径を有するＣ粉末９重量部
と、0.1〜8μの平均粒径を有するSi粉末21重量部
と、有機バインダーとしてアルコール10重量部を
配合混練し、周知のやり方で造粒する。このよう
な造粒物を乾燥させてからラバープレスにより半
導体炉芯管の形状に成型する。しかるのち1200℃
の温度で焼成し、塩酸ガスと少量の水蒸気とによ
り1000℃の温度でパージを行なつて純化させてか
らSiを1700℃の温度で含浸してケイ化させる。最
後に必要に応じて研磨等の最終仕上げを行なう。Example 70 parts by weight of SiC powder with an average particle size of 30-170μ, 9 parts by weight of C powder with an average particle size of 0.1-8μ, and 21 parts by weight of Si powder with an average particle size of 0.1-8μ. 10 parts by weight of alcohol as an organic binder are mixed and kneaded, and granulated using a well-known method. After drying such granules, they are molded into the shape of a semiconductor furnace tube using a rubber press. Afterwards 1200℃
The material is calcined at a temperature of 1,000°C, purified by purging with hydrochloric acid gas and a small amount of water vapor at a temperature of 1,000°C, and then impregnated with Si at a temperature of 1,700°C to silicify. Finally, perform final finishing such as polishing if necessary.
以上の方法で製造された半導体拡散炉の構成部
材の物理特性を測定したところ、嵩密度が3.08
で、強度が250MPaであつた。 When we measured the physical properties of the components of the semiconductor diffusion furnace manufactured by the above method, we found that the bulk density was 3.08.
The strength was 250MPa.
発明の効果
SiC粉末は粗粒のみを使用し、従来のように微
粒のものを使用しないので、処理操作が極めて容
易になるばかりでなく、不純物の混入を防ぎやす
くなる。Ｃ粉末とSi粉末は微粒のものを使用する
が、このようなＣ粉末やSi粉末は、SiC粉末に比
較して粉砕が容易であり、製造コストの低減をは
かれるばかりでなく、不純物の混入を効果的に防
止できるのである。Effects of the Invention Since SiC powder uses only coarse particles and does not use fine particles as in the past, processing operations are not only extremely easy, but also it is easier to prevent contamination with impurities. Fine C powder and Si powder are used, but such C powder and Si powder are easier to crush than SiC powder, which not only reduces manufacturing costs but also prevents contamination with impurities. It can be effectively prevented.
Claims (1)
重量部と、0.1〜8μの平均粒径を有するＣ粉末３
〜15重量部と、0.1〜8μの平均粒径を有するSi粉
末７〜35重量部とを混合焼成してなる半導体拡散
炉の構成部材の製造方法。1 SiC powder 50-90 with an average particle size of 30-170μ
parts by weight and C powder 3 having an average particle size of 0.1 to 8μ
15 parts by weight of Si powder and 7 to 35 parts by weight of Si powder having an average particle size of 0.1 to 8μ are mixed and fired.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60142498A JPS627670A (en) | 1985-07-01 | 1985-07-01 | Constitutional member for semiconductor diffusion furnace |
| US06/877,918 US4771021A (en) | 1985-07-01 | 1986-06-24 | Semi-conductor diffusion furnace components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60142498A JPS627670A (en) | 1985-07-01 | 1985-07-01 | Constitutional member for semiconductor diffusion furnace |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS627670A JPS627670A (en) | 1987-01-14 |
| JPH0248511B2 true JPH0248511B2 (en) | 1990-10-25 |
Family
ID=15316730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60142498A Granted JPS627670A (en) | 1985-07-01 | 1985-07-01 | Constitutional member for semiconductor diffusion furnace |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS627670A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0421415U (en) * | 1990-06-12 | 1992-02-24 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20190249059A1 (en) * | 2016-06-13 | 2019-08-15 | Teijin Limited | Silicon carbide production method and silicon carbide composite material |
-
1985
- 1985-07-01 JP JP60142498A patent/JPS627670A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0421415U (en) * | 1990-06-12 | 1992-02-24 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS627670A (en) | 1987-01-14 |
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