JPH0247106B2 - JUSHIMOORUDOGATAHANDOTAISOCHI - Google Patents
JUSHIMOORUDOGATAHANDOTAISOCHIInfo
- Publication number
- JPH0247106B2 JPH0247106B2 JP7498884A JP7498884A JPH0247106B2 JP H0247106 B2 JPH0247106 B2 JP H0247106B2 JP 7498884 A JP7498884 A JP 7498884A JP 7498884 A JP7498884 A JP 7498884A JP H0247106 B2 JPH0247106 B2 JP H0247106B2
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin
- flame retardant
- semiconductor device
- molded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003822 epoxy resin Substances 0.000 claims description 50
- 229920000647 polyepoxide Polymers 0.000 claims description 50
- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000003063 flame retardant Substances 0.000 claims description 20
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 claims description 18
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 12
- 239000008188 pellet Substances 0.000 claims description 11
- -1 imidazole compound Chemical class 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 3
- 125000003700 epoxy group Chemical group 0.000 claims description 3
- 150000001463 antimony compounds Chemical class 0.000 claims description 2
- 238000007789 sealing Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000000087 stabilizing effect Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000000499 gel Substances 0.000 description 2
- 150000002366 halogen compounds Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000006082 mold release agent Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000003018 phosphorus compounds Chemical class 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- VEORPZCZECFIRK-UHFFFAOYSA-N 3,3',5,5'-tetrabromobisphenol A Chemical compound C=1C(Br)=C(O)C(Br)=CC=1C(C)(C)C1=CC(Br)=C(O)C(Br)=C1 VEORPZCZECFIRK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241001635479 Coris bulbifrons Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- CAYGQBVSOZLICD-UHFFFAOYSA-N hexabromobenzene Chemical compound BrC1=C(Br)C(Br)=C(Br)C(Br)=C1Br CAYGQBVSOZLICD-UHFFFAOYSA-N 0.000 description 1
- 239000002440 industrial waste Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は樹脂モールド型半導体装置、特に、電
極部材に少なくとも１枚の半導体ペレツトを鑞付
し、エポキシ樹脂でモールドした半導体装置に関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a resin-molded semiconductor device, and particularly to a semiconductor device in which an electrode member is brazed with at least one semiconductor pellet and molded with epoxy resin.
エポキシ樹脂は熱硬化型の樹脂で、常温で液状
又は粉体状であり、熱を加えると高温状態で硬化
する。ところが、熱硬化時にエポキシ樹脂は一旦
ゲル化し液状となる。従つて、エポキシ樹脂でモ
ールドを行う場合は成形のために型を用いるのが
一般である。
Epoxy resin is a thermosetting resin that is liquid or powder at room temperature, and hardens at high temperatures when heated. However, during thermosetting, the epoxy resin once gels and becomes liquid. Therefore, when molding with epoxy resin, a mold is generally used for the molding.
第１図は型を用いて作られたアキシヤルリード
型ダイオードを示している。 FIG. 1 shows an axial lead diode made using a mold.
同図において、pn接合Ｊを有するシリコンペ
レツト１はその両主表面に半田付を良好にするた
めのニツケル鍍金層２が設けられており、半田３
により一対の銅ヘツダーリード４間に挾持されて
いる。ヘツダーリード４の表面には銀鍍金層５が
設けられている。このような構成のサブアセンブ
リに対して、シリコンペレツト１のpn接合Ｊの
表面安定化のため、一般に用いられるシリコーン
樹脂の表面安定化材６をシリコンペレツト１の側
周に設けてから、エポキシ樹脂で封止層７が設け
られる。 In the figure, a silicon pellet 1 having a pn junction J is provided with a nickel plating layer 2 on both main surfaces to improve soldering, and a solder 3
It is sandwiched between a pair of copper header leads 4. A silver plating layer 5 is provided on the surface of the header lead 4. For a subassembly with such a configuration, in order to stabilize the surface of the pn junction J of the silicon pellet 1, a commonly used surface stabilizing material 6 of silicone resin is provided on the side periphery of the silicon pellet 1, and then A sealing layer 7 is provided with epoxy resin.
エポキシ樹脂のモールド法としては、キヤステ
イング法、ポツテイング法、トランスフア法等が
あるが、いずれの方法でも前述のように成形のた
めの型を用いている。従つて、サブアセンブリの
型へのセツト、エポキシ樹脂の注型、モールド後
の離型等に工数がかかる欠点があつた。特にセツ
トと離型は連続作業が不可能で大量生産において
は大きな問題となつている。また、エポキシ樹脂
中に離型剤を含有させた場合には、離型が容易と
なる反面、ヘツダーリード４との接着性が低下
し、ヘツダーリード４と封止層７との間に間隙ｇ
ができてしまう。この間隙ｇを通して水分が浸入
してシリコンペレツト１にまで到達し、ダイオー
ドとしての逆方向特性を劣下させ信頼性低下の原
因となつている。 Epoxy resin molding methods include a casting method, a potting method, a transfer method, etc., and each method uses a mold for molding as described above. Therefore, there is a disadvantage that setting the subassembly into a mold, casting the epoxy resin, releasing the mold after molding, etc. requires a lot of man-hours. In particular, setting and demolding cannot be carried out continuously, which is a big problem in mass production. Furthermore, when a mold release agent is contained in the epoxy resin, although mold release becomes easy, the adhesion to the header leads 4 decreases, and a gap g is formed between the header leads 4 and the sealing layer 7.
is created. Moisture penetrates through this gap g and reaches the silicon pellet 1, deteriorating the reverse characteristics of the diode and causing a decrease in reliability.
一方、半導体装置用エポキシ樹脂は安全対策の
ため、難燃化するのが一般的であり、難燃化の手
法として従来より、ハロゲン化合物、リン化合物
を難燃剤としてエポキシ樹脂に添加している。 On the other hand, epoxy resins for semiconductor devices are generally made flame retardant for safety reasons, and halogen compounds and phosphorus compounds have traditionally been added to epoxy resins as flame retardants.
しかしながら、リン化合物は耐湿性の点で問題
があり、ハロゲン化合物は塩素化合物が安全衛生
や産業廃棄物処理を考慮して使用を避けており、
臭素化合物の使用が最善であり、良く用いられて
いる下式にて示すヘキサブロムベンゼンを用いた
場合、難燃剤がエポキシ樹脂中に均一に添加され
難く、難燃性が全体として低下するだけでなく、
難燃剤が凝集している部分で絶縁性が低下し、こ
の面からも半導体装置の信頼性が欠けるものであ
つた。 However, phosphorus compounds have problems in terms of moisture resistance, and halogen compounds, such as chlorine compounds, are avoided due to safety and hygiene considerations and industrial waste disposal.
It is best to use a bromine compound, and when using the commonly used hexabromobenzene shown in the formula below, it is difficult to add the flame retardant uniformly into the epoxy resin, and the flame retardance as a whole decreases. Without,
Insulating properties deteriorate in areas where the flame retardant aggregates, and from this point of view as well, the reliability of the semiconductor device is lacking.
〔発明の目的〕
従つて本発明の目的はエポキシ樹脂によるモー
ルドが容易で、連続作業が可能であり、大量生産
に適し、かつ、品質および信頼性の高い樹脂モー
ルド型半導体装置を提供するにある。 [Object of the Invention] Therefore, the object of the present invention is to provide a resin-molded semiconductor device that is easy to mold with epoxy resin, can be worked continuously, is suitable for mass production, and has high quality and reliability. .
本発明の特徴とするところは、エポキシ樹脂と
して有機二塩基酸ジヒドラジドとイミダゾール化
合物を含有し分子内にエポキシ基を有するものを
用い、難燃剤として臭素化フエノール化合物を添
加していることにある。
A feature of the present invention is that an epoxy resin containing an organic dibasic acid dihydrazide and an imidazole compound and having an epoxy group in the molecule is used, and a brominated phenol compound is added as a flame retardant.
以下本発明半導体装置を第２図に示した一実施
例に基づいて説明する。
The semiconductor device of the present invention will be explained below based on an embodiment shown in FIG.
第２図において第１図に示したものと同一物、
相当物には第１図と同一符号を付けてある。 In Fig. 2, the same thing as shown in Fig. 1,
Equivalent parts are given the same reference numerals as in FIG.
図中、１０は表面安定化材でポリイミドシリコ
ーン樹脂よりなり、１１は本発明になる封止層で
分子内にエポキシ基を有するエポキシ樹脂と該エ
ポキシ樹脂100モルに対し３〜15モルの有機二塩
基酸ジヒドラジドおよび上記エポキシ樹脂100モ
ルに対し２〜７モルのイミダゾール化合物を含有
する一液性エポキシ樹脂よりなるものである。 In the figure, 10 is a surface stabilizing material made of polyimide silicone resin, and 11 is a sealing layer according to the present invention, which is an epoxy resin having an epoxy group in the molecule and 3 to 15 moles of organic dihydride per 100 moles of the epoxy resin. It consists of a one-component epoxy resin containing a basic acid dihydrazide and 2 to 7 moles of an imidazole compound per 100 moles of the above epoxy resin.
このエポキシ樹脂には下式で示す臭素化フエノ
ール化合物（テトラブロムビスフエノールＡ）が
難燃剤として５〜15重量％添加されている。 A brominated phenol compound (tetrabromobisphenol A) represented by the following formula is added to this epoxy resin in an amount of 5 to 15% by weight as a flame retardant.
また、難燃助剤としてはアンチモン化合物例え
ば三酸化アンチモンSb2O3が1.5〜８重量％の割で
添加されている。 Further, as a flame retardant aid, an antimony compound such as antimony trioxide Sb 2 O 3 is added in an amount of 1.5 to 8% by weight.
これらの難燃剤と難燃助剤の添加割合は、下限
がUL規格Ｖ−０の難燃性を持たせる必要性から
決まり、上限は、粘度、機械的強度、絶縁耐圧等
からエポキシ樹脂が封止層としての機能を持ち得
なくなることから決つた。 The lower limit of the addition ratio of these flame retardants and flame retardant aids is determined by the need to have flame retardancy of UL standard V-0, and the upper limit is determined by the epoxy resin sealing based on viscosity, mechanical strength, dielectric strength, etc. This was decided because it would no longer function as a stop layer.
ポリイミドシリコーン樹脂は上記エポキシ樹脂
及び半導体との密着性が良いばかりでなく、エポ
キシ樹脂中のイミダゾールによつて分解され表面
安定化性が劣化したり、イミダゾールを浸透させ
て半導体ペレツトのpn接合に悪影響を与えるこ
とはない。 Polyimide silicone resin not only has good adhesion with the above-mentioned epoxy resin and semiconductor, but also has the potential to be decomposed by the imidazole in the epoxy resin, resulting in poor surface stability, or to allow imidazole to penetrate, which may have an adverse effect on the pn junction of the semiconductor pellet. will not be given.
上記配合のエポキシ樹脂は速硬化性と揺変性を
有するものである。この特性が如何なる意味を持
つかについて、製造工程を含めて説明する。 The epoxy resin blended above has fast curing properties and thixotropy. The meaning of this characteristic will be explained, including the manufacturing process.
先ず、上記表面安定化材１０の設けられたサブ
アセンブリが両電極４をほぼ水平とするよう保持
され回転されているところへ難燃剤、難燃助剤が
添加された所定量のエポキシ樹脂を滴下する。回
転によりエポキシ樹脂は図示する形に巻付く。即
ち、電極４や表面安定化材１０と接する部分では
回転により摩擦力を受けて揺変し、粘度が下つて
ヘツダーリード４や表面安定化材１０によくぬれ
る。一方サブアセンブリから離れた部分では摩擦
力が低下し遠心力のみとなるからほとんど揺変せ
ず、従つて図示の形を維持する。そこで、次にサ
ブアセンブリを回転させつつエポキシ樹脂の表面
部分のみを例えば加熱して硬化させる。この時、
加熱により表面部分のエポキシ樹脂は一旦ゲル化
し粘度が極度に下る。しかし内部のエポキシ樹脂
はゲル化しないので表面部分のエポキシ樹脂より
粘度は高い。従つて、図示の形はほぼ維持されて
いる。そして、速硬化性により表面部分のみが例
えば１分程度で硬化する。硬化した表面部によつ
て内部のエポキシ樹脂はとじこめられた形とな
る。従つて、この時点ではもはやサブアセンブリ
に回転を与えなくても、エポキシ樹脂はサブアセ
ンブリから落下することはなく、巻付けたままの
形を維持できる。最後に内部のエポキシ樹脂を例
えば加熱により硬化させると図示の封止層１１を
有する樹脂モールド型ダイオードが得られる。 First, a predetermined amount of epoxy resin added with a flame retardant and a flame retardant aid is dropped onto the subassembly provided with the surface stabilizing material 10, which is held and rotated so that both electrodes 4 are substantially horizontal. do. The rotation causes the epoxy resin to wrap into the shape shown. That is, the portions in contact with the electrodes 4 and the surface stabilizing material 10 are subjected to frictional force due to rotation and are thixotropically changed, and the viscosity decreases so that the header leads 4 and the surface stabilizing material 10 are well wetted. On the other hand, in a portion away from the subassembly, the frictional force decreases and there is only centrifugal force, so there is almost no shaking, and the shape as shown is maintained. Then, while rotating the subassembly, only the surface portion of the epoxy resin is cured, for example, by heating. At this time,
Upon heating, the epoxy resin on the surface becomes gelled and its viscosity drops to an extremely low level. However, the epoxy resin inside does not gel, so its viscosity is higher than that of the epoxy resin on the surface. Therefore, the shape shown is almost maintained. Due to its fast curing property, only the surface portion is cured in about 1 minute, for example. The epoxy resin inside is confined by the hardened surface. Therefore, even if the subassembly is no longer rotated at this point, the epoxy resin will not fall from the subassembly and can maintain its wound shape. Finally, by hardening the internal epoxy resin, for example, by heating, a resin molded diode having the sealing layer 11 shown in the figure is obtained.
エポキシ樹脂がヘツダーリード４や表面安定化
材１０と充分ぬれてから硬化させられるので、封
止層１１はヘツダーリード４や表面安定化材１０
によく接着している。また離型剤を含んでいない
ので、従来技術で生じていた第１図に示す間隙ｇ
は存在せず、耐湿性の高い半導体装置が得られ
る。 Since the epoxy resin is sufficiently wetted with the header leads 4 and the surface stabilizing material 10 before being cured, the sealing layer 11 is formed on the header leads 4 and the surface stabilizing material 10.
It is well adhered to. In addition, since it does not contain a mold release agent, the gap g shown in Fig. 1, which occurs with the conventional technology,
is not present, and a semiconductor device with high moisture resistance can be obtained.
巻付時に表面部のエポキシ樹脂は揺変しないの
で充分厚くエポキシ樹脂を巻付け硬化させること
が出来るため、シリコンペレツト１は外力から充
分保護される。 Since the epoxy resin on the surface does not thixotropically change during wrapping, the epoxy resin can be wrapped sufficiently thickly and cured, so that the silicon pellet 1 is sufficiently protected from external forces.
巻付時の形の通りの封止層１１が得られるの
で、巻付時の形を揃えるだけで型を用いなくとも
形の揃つた半導体装置が得られる。 Since the sealing layer 11 is obtained in the same shape as when it is wound, a semiconductor device with a uniform shape can be obtained by simply aligning the shape during winding without using a mold.
エポキシ樹脂が有する速硬化性と揺変性は上述
の如く型を用いなくてもサブアセンブリのモール
ドを可能にする。従つて、工数は低減出来、しか
も自動機械による連続作業を行い得て品質は安定
であるだけでなく、大量生産による供給も安定で
ある。 The fast curing properties and thixotropy of the epoxy resin allow the subassembly to be molded without the use of a mold, as described above. Therefore, the number of man-hours can be reduced, continuous work can be carried out by automatic machines, and the quality is not only stable, but also the supply through mass production is stable.
第３図は本発明の実施例を示している。 FIG. 3 shows an embodiment of the invention.
同図において、第２図に示すものと同一物、相
当物には同一符号が付けられている。 In this figure, the same or equivalent parts as shown in FIG. 2 are given the same reference numerals.
この実施例では、ヘツダー部１２ａから離れた
位置にフランジ部１２ｂが設けられたダブルヘツ
ダーリード１２が用いられている。 In this embodiment, a double header lead 12 is used in which a flange portion 12b is provided at a position distant from the header portion 12a.
フランジ部１２ｂは巻付時に軸方向へのエポキ
シ樹脂の流れを阻止し、封止層１１の形を揃え、
より一層品質の安定に貢献する。 The flange portion 12b prevents the epoxy resin from flowing in the axial direction during winding, aligns the shape of the sealing layer 11,
Contributing to even more stable quality.
以上の実施例では、半導体ペレツトが全て１枚
のダイオードで示されているが、多数枚の半導体
ペレツトが一対の電極間に鑞付挾持されたものに
も適用できる。 In the above embodiments, all the semiconductor pellets are shown as one diode, but the present invention can also be applied to an arrangement in which a plurality of semiconductor pellets are brazed and held between a pair of electrodes.
このように、本発明は電極の種類、形状に限定
されることなく適用できる。 In this way, the present invention can be applied without being limited to the type or shape of the electrode.
上記実施例ではエポキシ樹脂の硬化方法として
熱硬化法を挙げたが、エポキシ樹脂の硬化のため
に一般に用いられる紫外線、Ｘ線、赤外線、電子
線照射による硬化等を用いることができる。 In the above embodiments, a thermosetting method was used as a method for curing the epoxy resin, but curing by ultraviolet rays, X-rays, infrared rays, electron beam irradiation, etc., which are generally used for curing epoxy resins, can be used.
実施例のエポキシ樹脂の難燃性はUL規格Ｖ−
０を合格しており、本発明の難燃剤と難燃助剤の
難燃効果は半導体用エポキシ樹脂として満足出来
るものである。 The flame retardancy of the epoxy resin in the example is UL standard V-
The flame retardant effect of the flame retardant and flame retardant aid of the present invention is satisfactory as an epoxy resin for semiconductors.
本発明における難燃剤、難燃助剤はエポキシ樹
脂中で凝集することが少なく、従つて絶縁性の低
下がない。 The flame retardant and flame retardant aid in the present invention rarely aggregate in the epoxy resin, so there is no deterioration in insulation properties.
第４図は本発明で封止層１１として用いたエポ
キシ樹脂の絶縁寿命を評価した時の試料の内容と
方法を示している。 FIG. 4 shows the contents of samples and the method used to evaluate the insulation life of the epoxy resin used as the sealing layer 11 in the present invention.
第１図のヘツダーリード１に相当するものとし
て、ヘツダー電極４１を0.5mmの間隔をおいて対
向させ、本発明で用いたエポキシ樹脂でモールド
し硬化させた。硬化後のものを符号４２で示して
いる。 Header electrodes 41, corresponding to the header leads 1 in FIG. 1, were placed facing each other with an interval of 0.5 mm, and were molded with the epoxy resin used in the present invention and cured. The one after curing is indicated by reference numeral 42.
エポキシ樹脂４２の寸法は縦20mm、横20mm長さ
40mmである。 The dimensions of epoxy resin 42 are 20 mm long and 20 mm wide.
It is 40mm.
ヘツダー電極４１に交流電源４３より交流電圧
を印加し、エポキシ樹脂４２が貫通破壊する時の
印加電圧と絶縁破壊時間の関係を測定した。 An alternating current voltage was applied to the header electrode 41 from an alternating current power supply 43, and the relationship between the applied voltage and the dielectric breakdown time when the epoxy resin 42 undergoes penetration breakdown was measured.
第５図はその結果を示している。 Figure 5 shows the results.
図において横軸は任意の時間であり、縦軸は印
加電圧を第２図に示した実施例の半導体装置の定
格電圧で割つた指数で表わしてある。また、図
中、曲線Ａは本発明になるエポキシ樹脂、曲線Ｂ
は第１図に示した従来例で用いているエポキシ樹
脂のデータである。 In the figure, the horizontal axis represents an arbitrary time, and the vertical axis represents an index obtained by dividing the applied voltage by the rated voltage of the semiconductor device of the embodiment shown in FIG. In addition, in the figure, curve A is the epoxy resin of the present invention, curve B is
is the data of the epoxy resin used in the conventional example shown in FIG.
第５図で理解されるように、本発明によれば、
絶縁寿命は従来に較べて極端に長く、良好な絶縁
性を有しており、第２図に示す実施例の半導体装
置の試験においても寿命は長く、又、他の特性試
験においても何ら問題はなく、品質および信頼性
の高い半導体装置であることが確認されている。 As can be seen in FIG. 5, according to the present invention,
The insulation life is extremely long compared to conventional ones, and it has good insulation properties.The semiconductor device of the example shown in Fig. 2 had a long life in the test, and no problems were found in other characteristic tests. It has been confirmed that the semiconductor device is of high quality and reliability.
以上説明したように本発明によれば、モールド
が容易で、連続作業が可能であり、大量生産に適
し、かつ、品質および信頼性の高い樹脂モールド
型半導体装置を得ることができる。
As described above, according to the present invention, it is possible to obtain a resin-molded semiconductor device that is easy to mold, can be worked continuously, is suitable for mass production, and has high quality and reliability.
第１図は従来のアキシヤルリード型樹脂モール
ドダイオードを示す断面図、第２図は本発明の一
実施例を示すアキシヤルリード型樹脂モールドダ
イオードの断面図、第３図は本発明の他の実施例
になるアキシヤルリード型樹脂モールドダイオー
ドの断面図、第４図は本発明で用いたエポキシ樹
脂の絶縁寿命試験を行つた時の試料の内容と方法
を示す図、第５図は絶縁寿命試験結果を示す図で
ある。
１…シリコンペレツト、２…ニツケル鍍金層、
３…半田、４…ヘツダーリード、５…銀鍍金層、
１０…表面安定化材、１１…封止層。
FIG. 1 is a sectional view showing a conventional axial lead type resin molded diode, FIG. 2 is a sectional view of an axial lead type resin molded diode showing one embodiment of the present invention, and FIG. 3 is a cross sectional view showing another example of the present invention. A cross-sectional view of an axial lead type resin molded diode as an example, Fig. 4 is a diagram showing the contents and method of the sample when conducting an insulation life test of the epoxy resin used in the present invention, and Fig. 5 shows the insulation life. It is a figure showing a test result. 1... Silicon pellet, 2... Nickel plating layer,
3...Solder, 4...Header lead, 5...Silver plating layer,
10... Surface stabilizing material, 11... Sealing layer.
Claims (1)
合を有する少なくとも１枚の半導体ペレツトを鑞
付けし、エポキシ樹脂でモールドした樹脂モール
ド型半導体装置において、エポキシ樹脂は有機二
塩基酸ジヒドラジドとイミダゾール化合物を含有
し分子内にエポキシ基を有するもので、臭素化フ
エノール化合物が難燃剤として添加されているこ
とを特徴とする樹脂モールド型半導体装置。 ２ 特許請求の範囲第１項において、難燃剤は５
〜15重量％添加されていることを特徴とする樹脂
モールド型半導体装置。 ３ 特許請求の範囲第１項において、難燃剤は難
燃助剤として1.5〜８重量％のアンチモン化合物
が添加されていることを特徴とする樹脂モールド
型半導体装置。[Claims] 1. In a resin-molded semiconductor device in which at least one semiconductor pellet having at least one pn junction between a pair of electrode members is brazed and molded with epoxy resin, the epoxy resin is an organic dibasic. A resin-molded semiconductor device containing an acid dihydrazide and an imidazole compound and having an epoxy group in the molecule, and characterized in that a brominated phenol compound is added as a flame retardant. 2 In claim 1, the flame retardant is 5
A resin molded semiconductor device characterized in that ~15% by weight is added. 3. The resin molded semiconductor device according to claim 1, wherein the flame retardant contains 1.5 to 8% by weight of an antimony compound as a flame retardant aid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7498884A JPH0247106B2 (en) | 1984-04-16 | 1984-04-16 | JUSHIMOORUDOGATAHANDOTAISOCHI |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7498884A JPH0247106B2 (en) | 1984-04-16 | 1984-04-16 | JUSHIMOORUDOGATAHANDOTAISOCHI |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60219755A JPS60219755A (en) | 1985-11-02 |
| JPH0247106B2 true JPH0247106B2 (en) | 1990-10-18 |
Family
ID=13563164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7498884A Expired - Lifetime JPH0247106B2 (en) | 1984-04-16 | 1984-04-16 | JUSHIMOORUDOGATAHANDOTAISOCHI |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0247106B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06105724B2 (en) * | 1985-12-02 | 1994-12-21 | 株式会社日立製作所 | Method for manufacturing semiconductor device |
-
1984
- 1984-04-16 JP JP7498884A patent/JPH0247106B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60219755A (en) | 1985-11-02 |
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