JPH0245987A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH0245987A JPH0245987A JP19685288A JP19685288A JPH0245987A JP H0245987 A JPH0245987 A JP H0245987A JP 19685288 A JP19685288 A JP 19685288A JP 19685288 A JP19685288 A JP 19685288A JP H0245987 A JPH0245987 A JP H0245987A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- electrode
- contact
- laser chip
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 238000010030 laminating Methods 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
- H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、半導体レーザ装置に係り、特にレーザチッ
プのストレスを除去した絶縁膜と電極との多層構造に関
するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a semiconductor laser device, and particularly to a multilayer structure of an insulating film and an electrode that eliminates stress from a laser chip.
（従来の技術）
第３図は従来の半導体レーザ装置のレーザチップの断面
図で、活性層の両脇にメサが形成された構造における絶
縁膜と電極の構造の一例である。(Prior Art) FIG. 3 is a cross-sectional view of a laser chip of a conventional semiconductor laser device, showing an example of the structure of an insulating film and electrodes in a structure in which mesas are formed on both sides of an active layer.
この図で、１はレーザチップ、２は活性層、３は絶縁膜
、４は電極、７はブロック層である。この半導体レーザ
装置は、レーザチップ１の活性層２の両脇にメサを形成
した後、バターニングによりコンタクトを形成する面以
外に絶縁膜３を形成し、さらに、コンタクトを形成する
面を含む全面に電極４を形成したものである。In this figure, 1 is a laser chip, 2 is an active layer, 3 is an insulating film, 4 is an electrode, and 7 is a block layer. In this semiconductor laser device, after mesas are formed on both sides of an active layer 2 of a laser chip 1, an insulating film 3 is formed on the surface other than the surface where the contact is to be formed by patterning, and then the entire surface including the surface where the contact is to be formed is formed. An electrode 4 is formed on the surface.
次に動作について説明する。Next, the operation will be explained.
この構造では、活性層２の両脇にメサが形成されている
ためメサの内側のみに電流が流れ、メサの外側とは電気
的に分離される。したがって、メサの外側に直流電流が
流れることはない。一方、高周波変調を行った場合には
、メサの内側では比較的容量の大きなｐｎｐｎ構造によ
るブロック層７を介して電流が流れ、メサの外側では比
較的容量の小さなレーザチップ１表面、絶縁膜３．電極
４とからなるＭＩＳ構造を介して電流が流れる。In this structure, since mesas are formed on both sides of the active layer 2, current flows only inside the mesa and is electrically isolated from the outside of the mesa. Therefore, no direct current flows outside the mesa. On the other hand, when high frequency modulation is performed, a current flows inside the mesa through the block layer 7 having a relatively large capacitance and has a pnpn structure, and outside the mesa, a current flows through the surface of the laser chip 1 and the insulating film 3, which have a relatively small capacitance. ．． A current flows through the MIS structure consisting of the electrode 4.
したがって、メサを形成することによりレーザチップ１
の容量は、面積の大部分を占める比較的容量の小さなＭ
ＩＳ構造に依存するため、全体の容量を低減化できる。Therefore, by forming the mesa, the laser chip 1
The capacity of M is relatively small and occupies most of the area.
Since it depends on the IS structure, the overall capacity can be reduced.
さらに、絶縁膜３の膜厚を厚くすることにより、容量の
低減化が可能となる。Furthermore, by increasing the thickness of the insulating film 3, the capacitance can be reduced.
しかしながら、上記のような従来の半導体レーザ装置の
容量の低減化には、第３図の絶縁膜３はできる限り厚く
する方が良いが、絶縁膜３を厚くし過ぎると絶縁膜３の
応力が活性層２を含むレーザチップ１にストレスを与え
、レーザの寿命に悪影響を与えるという問題点があった
。However, in order to reduce the capacitance of the conventional semiconductor laser device as described above, it is better to make the insulating film 3 in FIG. There is a problem in that stress is applied to the laser chip 1 including the active layer 2, which adversely affects the life of the laser.
この発明は、上記のような問題点を解決するためになさ
れたもので、レーザチップにストレスを与えることなく
、容量を低減化することができる半導体レーザ装置を得
ることを目的とする。The present invention was made to solve the above-mentioned problems, and an object of the present invention is to obtain a semiconductor laser device whose capacity can be reduced without applying stress to the laser chip.
（課題を解決するための手段）
この発明に係る半導体レーザ装置は、コンタクトを形成
する面以外のレーザチップの上面に絶縁膜と電極を交互
に多層構造に積層するとともに、コンタクト面と接触す
る電極を他の電極と絶縁して形成したものである。(Means for Solving the Problems) A semiconductor laser device according to the present invention has an insulating film and an electrode laminated alternately in a multilayer structure on the upper surface of the laser chip other than the surface on which the contact is formed, and an electrode that is in contact with the contact surface. The electrode is insulated from other electrodes.
この発明における多層構造に積層した絶縁膜と電極はそ
れぞれが容量の役割をなし、それらが直列に接続された
ものになっている。したがって、全体として容量を低減
化でき、しかも各絶縁膜の応力は比較的柔らかな電極で
緩和されるため、レーザチップにストレスを与えること
がない。In this invention, the insulating films and electrodes laminated in a multilayer structure each serve as a capacitor, and are connected in series. Therefore, the capacitance can be reduced as a whole, and the stress in each insulating film is alleviated by the relatively soft electrodes, so no stress is applied to the laser chip.
以下、この発明の一実施例を図面について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図はこの発明の半導体レーザ装置の一実施例を示す
断面図である。この図で、第３図と同一符号は同一構成
部分を示すが、ここでは絶縁膜３を第１の絶縁膜といい
、電極４を第１の電極という。５は前記第１の電極４上
に形成された第２の絶縁膜、６は前記第２の絶縁膜５上
に形成された第２の電極である。FIG. 1 is a sectional view showing an embodiment of a semiconductor laser device of the present invention. In this figure, the same reference numerals as in FIG. 3 indicate the same constituent parts, but here the insulating film 3 is referred to as a first insulating film, and the electrode 4 is referred to as a first electrode. 5 is a second insulating film formed on the first electrode 4, and 6 is a second electrode formed on the second insulating film 5.
次に、この発明の製造プロセスを第２図（ａ）〜（Ｃ）
について説明する。Next, the manufacturing process of this invention is shown in FIGS. 2(a) to (C).
I will explain about it.
まず、第２図（ａ）において、活性層２の脇にメサを形
成したレーザチップ１の表面上に、第２図（ｂ）に示す
ように、バターニングによりコンタクトを形成する面以
外に第１の絶縁膜３とその上面に第１の電極４を形成す
る。次に、第２図（Ｃ）に示すように、バターニングに
よりコンタクトを形成する面以外に第１の電極４が露出
しないようにして第２の絶縁膜５を形成する。最後に、
上面全面に第２の電極６を形成し、第１図のような多層
構造を得る。First, in FIG. 2(a), on the surface of the laser chip 1 with a mesa formed on the side of the active layer 2, as shown in FIG. A first insulating film 3 and a first electrode 4 are formed on its upper surface. Next, as shown in FIG. 2C, the second insulating film 5 is formed by patterning so that the first electrode 4 is not exposed on any surface other than the surface where the contact is to be formed. lastly,
A second electrode 6 is formed on the entire upper surface to obtain a multilayer structure as shown in FIG.
次に動作について説明する。Next, the operation will be explained.
この構造では、活性層２の両脇にメサが形成されている
ために、メサの内側のみに電流が流れ、メサの外側とは
電気的に分離される。したがって、メサの外側に直流電
流が流れることはない。In this structure, since mesas are formed on both sides of the active layer 2, current flows only inside the mesa and is electrically isolated from the outside of the mesa. Therefore, no direct current flows outside the mesa.
一方、高周波変調を行った場合には、メサの内側では比
較的容量の大きなｐｎｐｎ構造によるブロック層７を介
して電流が流れ、メサの外側ではレーザチップ１表面、
第１の絶縁膜３．第１の電極４、第２の絶縁膜５および
第２の電極６とからなる２層のＭＩＳ構造を介して電流
が流れる。このＭＩＳ構造では第１の電極４を第１の絶
縁膜３と第２の絶縁膜６との間に挿入することにより、
容量を直列に接続した構造となっている。したがつて、
この２層のＭＩＳ構造の容量が低減化され、しかも、こ
の２層のＭＩＳ構造の領域はレーザチップ１の上面の面
積の大部分を占めるため、全体の容量が低減化される。On the other hand, when high frequency modulation is performed, a current flows inside the mesa through the blocking layer 7 having a relatively large capacity pnpn structure, and outside the mesa, the current flows through the surface of the laser chip 1,
First insulating film 3. A current flows through a two-layer MIS structure consisting of a first electrode 4, a second insulating film 5, and a second electrode 6. In this MIS structure, by inserting the first electrode 4 between the first insulating film 3 and the second insulating film 6,
It has a structure in which capacitors are connected in series. Therefore,
The capacitance of the two-layer MIS structure is reduced, and since the region of the two-layer MIS structure occupies most of the area of the upper surface of the laser chip 1, the overall capacitance is reduced.
以上説明したようにこの発明は、コンタクトを形成する
面以外のレーザチップの上面に絶縁膜と電極を交互に多
層構造に積層するとともに、コンタクト面と接触する電
極を他の電極と絶縁して形成したので、半導体レーザ装
誼の容量を低減化できるとともに、絶縁膜の応力による
ストレスをレーザチップに与えることがなくなり、長寿
命の半導体レーザ装置を得ることができる。As explained above, the present invention involves laminating insulating films and electrodes alternately in a multilayer structure on the top surface of a laser chip other than the surface on which contacts are formed, and forming electrodes that are in contact with the contact surface insulated from other electrodes. Therefore, the capacitance of the semiconductor laser device can be reduced, and stress due to the stress of the insulating film is not applied to the laser chip, so that a semiconductor laser device with a long life can be obtained.
第１図はこの発明の一実施例による半導体レーザ装置を
示す断面図、第２図はこの発明の半導体レーザ装置の製
造プロセスを示す断面図、第３図は従来の半導体レーザ
装置を示す断面図である。
図において、１はレーザチップ、２は活性層、３は第１
の絶縁膜、４は第１の電極、５は第２の絶縁膜、
６は第２の電極、
７はブロック層であ
る。
なお、
各図中の同一符号は同一または相当部分を示す。FIG. 1 is a cross-sectional view showing a semiconductor laser device according to an embodiment of the present invention, FIG. 2 is a cross-sectional view showing the manufacturing process of the semiconductor laser device of the present invention, and FIG. 3 is a cross-sectional view showing a conventional semiconductor laser device. It is. In the figure, 1 is a laser chip, 2 is an active layer, and 3 is a first laser chip.
4 is a first electrode, 5 is a second insulating film, 6 is a second electrode, and 7 is a block layer. Note that the same reference numerals in each figure indicate the same or equivalent parts.
Claims (1)
上面に、絶縁膜と電極を交互に多層構造に積層するとと
もに、コンタクト面と接触する電極を他の電極と絶縁し
て形成したことを特徴とする半導体レーザ装置。The feature is that an insulating film and an electrode are alternately laminated in a multilayer structure on the upper surface of a mesa-type laser chip other than the surface on which the contact is formed, and the electrode in contact with the contact surface is insulated from other electrodes. Semiconductor laser equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19685288A JPH0245987A (en) | 1988-08-06 | 1988-08-06 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19685288A JPH0245987A (en) | 1988-08-06 | 1988-08-06 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0245987A true JPH0245987A (en) | 1990-02-15 |
Family
ID=16364730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19685288A Pending JPH0245987A (en) | 1988-08-06 | 1988-08-06 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0245987A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04223387A (en) * | 1990-12-25 | 1992-08-13 | Matsushita Electron Corp | Semiconductor light emitting element and manufacture thereof |
| JP2006324427A (en) * | 2005-05-18 | 2006-11-30 | Mitsubishi Electric Corp | Semiconductor laser |
-
1988
- 1988-08-06 JP JP19685288A patent/JPH0245987A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04223387A (en) * | 1990-12-25 | 1992-08-13 | Matsushita Electron Corp | Semiconductor light emitting element and manufacture thereof |
| JP2006324427A (en) * | 2005-05-18 | 2006-11-30 | Mitsubishi Electric Corp | Semiconductor laser |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0878283A (en) | Thin film capacitor | |
| JPH03215915A (en) | Laminated capacitor | |
| US4890192A (en) | Thin film capacitor | |
| JPH09199371A (en) | Metallized film capacitor | |
| JPH0245987A (en) | Semiconductor laser device | |
| JP2001257316A (en) | Semiconductor device | |
| JPS5890755A (en) | Semiconductor device | |
| JPH05234823A (en) | Manufacture of solid electrolytic capacitor | |
| JPH02126665A (en) | Semiconductor device | |
| JPH0247862A (en) | Semiconductor integrated circuit device | |
| JPH03257856A (en) | Semiconductor device | |
| KR940012614A (en) | Highly Integrated Semiconductor Junction Device and Manufacturing Method Thereof | |
| JPH03241864A (en) | Capacitor for microwave integrated circuit | |
| JPS60258952A (en) | Semiconductor memory device | |
| JPH03139876A (en) | Manufacture of semiconductor device | |
| JPS6055662A (en) | Semiconductor device | |
| JPH0923066A (en) | Built-in capacitor substrate | |
| JPS5938045Y2 (en) | Electrolytic capacitor | |
| JPS63120434A (en) | Semiconductor device | |
| JPH0936305A (en) | Structure of chip type multiple element having diode and capacitor | |
| JPH02290049A (en) | Semiconductor device | |
| JPS6345849A (en) | Thin film capacitance element | |
| KR100242468B1 (en) | Semiconductor device and process for fabricating the same | |
| JPS6425452A (en) | Semiconductor device | |
| JPS59228752A (en) | Semiconductor device |