JPH0239590B2 - - Google Patents
Info
- Publication number
- JPH0239590B2 JPH0239590B2 JP58226769A JP22676983A JPH0239590B2 JP H0239590 B2 JPH0239590 B2 JP H0239590B2 JP 58226769 A JP58226769 A JP 58226769A JP 22676983 A JP22676983 A JP 22676983A JP H0239590 B2 JPH0239590 B2 JP H0239590B2
- Authority
- JP
- Japan
- Prior art keywords
- evaporation
- base material
- shutter
- substrate
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 claims description 28
- 238000001704 evaporation Methods 0.000 claims description 25
- 239000010409 thin film Substances 0.000 claims description 24
- 230000008020 evaporation Effects 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 239000002245 particle Substances 0.000 claims description 9
- 238000010894 electron beam technology Methods 0.000 claims description 4
- 238000007738 vacuum evaporation Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
【発明の詳細な説明】
本発明はパルス蒸着による薄膜製造において良
質の薄膜を製造しうる薄膜製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film manufacturing method capable of manufacturing a thin film of good quality in thin film manufacturing by pulsed evaporation.
従来、この種の薄膜製造方法としては、母材を
蒸発させるための熱源としてパルスレーザを用い
たレーザ蒸着法に基づく方法が知られている。こ
の方法は、母材に高エネルギ密度のレーザ光を短
時間照射することにより母材表層部のみを高温に
加熱し蒸発せしめ、これと対向する基板上に母材
物質の薄膜を堆積させるものである。このため、
母材全体を定常的に加熱する通常の蒸着方法に比
べて、膜堆積速度が大きく、また、母材の表層部
以外は溶融しないのでルツボが不要であり、高融
点物質からなる薄膜を容易に製造できる、などの
利点がある。ところが従来の上記蒸着方法におい
ては、母材表面で反射したレーザ光の一部が基板
に当り、基板および堆積膜に損傷を与えるという
問題がある。また母材の加熱温度が高いので蒸発
粒子中に高エネルギーをもつたイオン、電子、中
性原子、分子等が多数含まれており、これらも堆
積膜に損傷を与える一因となつている。さらに、
母材を急激に加熱することによつて発生する飛沫
が基板面に衝突することにより、堆積膜に巨視的
な欠損を与えるなどの欠点を有する。 Conventionally, as this type of thin film manufacturing method, a method based on a laser evaporation method using a pulsed laser as a heat source for evaporating a base material is known. This method heats only the surface layer of the base material to a high temperature and evaporates it by irradiating the base material with high-energy-density laser light for a short period of time, and then deposits a thin film of the base material on the opposing substrate. be. For this reason,
Compared to normal vapor deposition methods that constantly heat the entire base material, the film deposition rate is faster, and since only the surface layer of the base material is melted, no crucible is required, making it easy to form thin films made of high-melting-point substances. It has the advantage of being easy to manufacture. However, the conventional vapor deposition method described above has a problem in that a portion of the laser light reflected from the surface of the base material hits the substrate, damaging the substrate and the deposited film. Furthermore, since the heating temperature of the base material is high, the evaporated particles contain many high-energy ions, electrons, neutral atoms, molecules, etc., which also cause damage to the deposited film. moreover,
This method has drawbacks such as macroscopic defects in the deposited film due to droplets generated by rapidly heating the base material colliding with the substrate surface.
本発明はこのような従来方法の問題を解消し、
パルス蒸着による良質な薄膜を製造しうる方法を
提供するものであつて、その構成は、真空容器内
に蒸発母材と基板とが配設されかつ蒸発母材と基
板との間にシヤツタを介設することより真空蒸着
を行う薄膜製造方法において、パルスレーザ又は
パルス電子ビームからなる蒸発手段により蒸発粒
子流を間欠的に発生させ、該蒸発手段の間欠作動
に同期してシヤツタを開閉することを特徴とす
る。 The present invention solves the problems of such conventional methods,
The present invention provides a method for producing a high-quality thin film by pulsed evaporation, and its structure is such that an evaporation base material and a substrate are placed in a vacuum container, and a shutter is interposed between the evaporation base material and the substrate. In a thin film manufacturing method using vacuum evaporation, an evaporation particle flow is intermittently generated by an evaporation means consisting of a pulsed laser or a pulsed electron beam, and a shutter is opened and closed in synchronization with the intermittent operation of the evaporation means. Features.
以下に本発明を図面に示す実施例に基づいて詳
細に説明する。 The present invention will be described in detail below based on embodiments shown in the drawings.
本発明に係る薄膜製造方法に用いる装置構成の
概略を図に示す。 The diagram schematically shows the configuration of an apparatus used in the thin film manufacturing method according to the present invention.
図において、真空容器１の底部に蒸発母材３が
収納され、該蒸発母材３の上方に基板４が設けら
れている。更に該蒸発母材３と基板４との間には
シヤツタ５が介設されている。該真空容器１の側
部には排気口２が設けられる一方、他方の側には
光透過窓７が設けられ更に該光透過窓７を通じて
蒸発母材３にレーザ光を間欠的に照射する蒸発手
段１２即ちＱスイツチのレーザ発振器６が付設さ
れている。 In the figure, an evaporation base material 3 is housed at the bottom of a vacuum container 1, and a substrate 4 is provided above the evaporation base material 3. Furthermore, a shutter 5 is interposed between the evaporation base material 3 and the substrate 4. An exhaust port 2 is provided on one side of the vacuum container 1, and a light transmission window 7 is provided on the other side, and the evaporation base material 3 is intermittently irradiated with laser light through the light transmission window 7. A means 12 or Q-switch laser oscillator 6 is provided.
一方、上記シヤツタ５にはレーザ発振器６の間
欠作動に同期してシヤツタ５を開閉する開閉制御
機構１１が設けられている。該開閉制御機構１１
は蒸発母材３に照射されるレーザ光を検出するレ
ーザ光検出器８、該レーザ光検出器８の検出信号
を増幅する増幅器９、該増幅器９の信号により作
動するシヤツタ駆動源１０とにより構成されてい
る。 On the other hand, the shutter 5 is provided with an opening/closing control mechanism 11 that opens and closes the shutter 5 in synchronization with the intermittent operation of the laser oscillator 6. The opening/closing control mechanism 11
is composed of a laser light detector 8 that detects the laser light irradiated onto the evaporation base material 3, an amplifier 9 that amplifies the detection signal of the laser light detector 8, and a shutter drive source 10 that is operated by the signal of the amplifier 9. has been done.
上記構成において、まずレーザ発振器６により
蒸発母材３の表面にパルスレーザ光が照射され
る。これによつて蒸発母材３の表面が加熱され、
その蒸発粒子が発生する。一方、パルスレーザ光
照射中、シヤツタ５は基板４を覆つているが、レ
ーザ光検出器８によりレーザ光照射の終了が検出
され、この検出信号を受けた駆動源１０の作動に
より直ちにシヤツタ５が開かれ基板面を露出させ
る。光照射が終了してからシヤツタ５が開くまで
の時間t1は蒸発粒子の飛沫速度および蒸発母材３
と基板４との距離Ｌに応じて定められる。通常の
蒸発装置と同様にＬが約10cmであるときt1は概ね
0.1〜1msec程度である。 In the above configuration, the laser oscillator 6 first irradiates the surface of the evaporation base material 3 with pulsed laser light. As a result, the surface of the evaporation base material 3 is heated,
The evaporated particles are generated. On the other hand, the shutter 5 covers the substrate 4 during the pulsed laser beam irradiation, but the end of the laser beam irradiation is detected by the laser beam detector 8, and the drive source 10 receives this detection signal, and the shutter 5 is immediately activated. It is opened to expose the substrate surface. The time t1 from the end of light irradiation until the shutter 5 opens is determined by the droplet speed of the evaporated particles and the evaporated base material 3.
and the distance L between the substrate 4 and the substrate 4. As in a normal evaporator, when L is about 10 cm, t 1 is approximately
It is about 0.1 to 1 msec.
次に以上のように開いたシヤツタ５は駆動源１
０に内蔵されたタイマ機構により一定時間後再び
閉じる。シヤツタ５の開いている時間t2は概ね１
〜10msec程度とするのが適当である。 Next, the shutter 5 opened as described above is connected to the driving source 1.
It closes again after a certain period of time due to the built-in timer mechanism. The opening time t2 of shutter 5 is approximately 1
It is appropriate to set it to about 10 msec.
以上述べた一連の動作により基板上へ薄膜が形
成される。更に上記動作が多数回繰返されること
により膜厚の大きな薄膜が形成される。 A thin film is formed on the substrate through the series of operations described above. Further, by repeating the above operation many times, a thin film with a large thickness is formed.
上記薄膜の形成においては、レーザ光照射中、
基板４はシヤツタ５で覆われているので、反射レ
ーザ光が基板４に入射することはない。同様に高
エネルギーをもつ電子、イオン、中性原子や分子
などの飛行速度は通常の蒸発原子あるいは分子に
比べはるかに大きいのでシヤツタ５が開く前にシ
ヤツタ５の位置に到達するので同様にこれらが基
板４に入射することはない。一方、急激な加熱に
よつて生ずる飛沫の飛行速度は、通常の蒸発原子
あるいは分子のそれに比べ、はるかに小さく、蒸
発母材３からシヤツタ５の位置まで飛行するのに
数10msec以上の時間を要する。ここでシヤツタ
５が開いている時間はこれよりも十分短かく設定
してあるので、これら飛沫が基板４に入射するこ
とはない。 In forming the above-mentioned thin film, during laser beam irradiation,
Since the substrate 4 is covered with the shutter 5, reflected laser light does not enter the substrate 4. Similarly, the flight speed of high-energy electrons, ions, neutral atoms, molecules, etc. is much higher than that of ordinary evaporated atoms or molecules, so they reach the position of the shutter 5 before the shutter 5 opens. It does not enter the substrate 4. On the other hand, the flight speed of droplets generated by rapid heating is much lower than that of ordinary evaporated atoms or molecules, and it takes several tens of milliseconds or more to fly from the evaporation base material 3 to the position of the shutter 5. . Since the time during which the shutter 5 is open is set to be sufficiently shorter than this, these droplets will not be incident on the substrate 4.
以上説明したように本実施例においては、膜形
成に必要な蒸発粒子のみをシヤツタを用いてその
飛行時間により選別して基板上に堆積させるもの
であり、膜形成に有害な反射レーザ光、高エネル
ギぶ粒子、母材の飛沫などが基板および堆積膜面
に飛沫するのを確実に防止できる。 As explained above, in this example, only the evaporated particles necessary for film formation are selected by the flight time using a shutter and deposited on the substrate, and reflected laser light and high-temperature particles harmful to film formation are removed. It is possible to reliably prevent energetic particles, splashes from the base material, etc. from splashing onto the substrate and the deposited film surface.
尚、上記実施例において、レーザ発振器６を用
いる代わりに、パルス電子線源を真空容器１の内
部に設置し、パルス電子ビームにより蒸発母材３
を加熱してもよい。また、シヤツタ５は通常の往
復動形式のものに代えて回転シヤツタを用いるこ
ともできる。 In the above embodiment, instead of using the laser oscillator 6, a pulsed electron beam source is installed inside the vacuum container 1, and the pulsed electron beam evaporates the base material 3.
may be heated. Further, the shutter 5 may be a rotary shutter instead of a normal reciprocating type.
以上説明したように本発明の装置によれば、従
来のパルス蒸発装置を用いた薄膜製造方法では困
難とされていた光熱、高速粒子、母材飛沫の基板
面および堆積膜面上への入射が抑制でき、損傷の
ない高品質の薄膜を製造できる利点がある。また
堆積速度が大きいこと、ルツボを必要としないこ
と、高融点物質の蒸着が可能であること、などの
パルス蒸着法が本来有する利点も何ら損なうこと
はない。 As explained above, the apparatus of the present invention prevents the incidence of light heat, high-velocity particles, and base material droplets onto the substrate surface and deposited film surface, which was considered difficult in thin film manufacturing methods using conventional pulse evaporation equipment. It has the advantage of being able to produce high-quality thin films without any damage. Furthermore, the inherent advantages of the pulsed deposition method, such as a high deposition rate, no need for a crucible, and the ability to deposit high-melting-point substances, are not impaired in any way.
したがつて本発明の薄膜製造方法を、例えば炭
素、タングステン等の高融点物質を母材とする薄
膜の製造に用いれば、高純度かつ結晶性の良好な
薄膜の製造が可能であり、また基板材料が耐熱性
に乏しいプラスチツクなどの場合であつても、同
様に良質な薄膜を容易に作製できる。 Therefore, if the thin film manufacturing method of the present invention is used for manufacturing a thin film using a high melting point substance such as carbon or tungsten as a base material, it is possible to manufacture a thin film with high purity and good crystallinity, and it is also possible to manufacture a thin film with high purity and good crystallinity. Even when the material is plastic or the like with poor heat resistance, a high-quality thin film can be easily produced in the same way.
また他の応用例として、本発明をY2O3，
Al2O3，SiO2等の絶縁性薄膜の製造に適用すれ
ば、絶縁破壊電圧のしきい値を低下させる要因で
ある不純物濃度、結晶欠陥等が減少し、高耐圧の
絶縁膜を作製できる。 In addition, as another application example, the present invention can be applied to Y 2 O 3 ,
If applied to the production of insulating thin films such as Al 2 O 3 and SiO 2 , impurity concentration and crystal defects, which are factors that lower the threshold of dielectric breakdown voltage, will be reduced, making it possible to create insulating films with high breakdown voltage. .
更に本発明の応用分野は上記例に限らず、一般
に結晶性の良好な高品質薄膜の製造に有効であ
る。 Furthermore, the field of application of the present invention is not limited to the above examples, but is generally effective in producing high quality thin films with good crystallinity.
図は本発明に係る薄膜製造方法に用いる装置の
概略図である。
図中、１……真空容器、２……排気口、３……
蒸発母材、４……基板、５……シヤツタ、６……
レーザ発振器、７……光透過窓、８……レーザ光
検出器、９……増幅器、１０……シヤツタ駆動
源、１１……開閉制御機構、１２……蒸発手段。
The figure is a schematic diagram of an apparatus used in the thin film manufacturing method according to the present invention. In the figure, 1...vacuum container, 2...exhaust port, 3...
Evaporation base material, 4... substrate, 5... shutter, 6...
Laser oscillator, 7... Light transmission window, 8... Laser photodetector, 9... Amplifier, 10... Shutter drive source, 11... Opening/closing control mechanism, 12... Evaporation means.
Claims (1)
つ蒸発母材と基板との間にシヤツタを介設するこ
とにより真空蒸着を行う薄膜製造方法において、
パルスレーザ又はパルス電子ビームからなる蒸発
手段により蒸発粒子流を間欠的に発生させ、該蒸
発手段の間欠作動に同期してシヤツタを開閉する
ことを特徴とする薄膜製造方法。1. In a thin film manufacturing method in which an evaporation base material and a substrate are arranged in a vacuum container and vacuum evaporation is performed by interposing a shutter between the evaporation base material and the substrate,
1. A method for producing a thin film, characterized in that an evaporation particle stream is intermittently generated by an evaporation means consisting of a pulsed laser or a pulsed electron beam, and a shutter is opened and closed in synchronization with the intermittent operation of the evaporation means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22676983A JPS60119710A (en) | 1983-12-02 | 1983-12-02 | Unit for producing thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22676983A JPS60119710A (en) | 1983-12-02 | 1983-12-02 | Unit for producing thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60119710A JPS60119710A (en) | 1985-06-27 |
| JPH0239590B2 true JPH0239590B2 (en) | 1990-09-06 |
Family
ID=16850320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22676983A Granted JPS60119710A (en) | 1983-12-02 | 1983-12-02 | Unit for producing thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60119710A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63250813A (en) * | 1987-04-08 | 1988-10-18 | Matsushita Electric Ind Co Ltd | Method for deposition of reactive ion beam film |
| JP2650910B2 (en) * | 1987-04-22 | 1997-09-10 | 株式会社日立製作所 | Method of forming oxide superconductor thin film |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52126168A (en) * | 1976-04-15 | 1977-10-22 | Hitachi Ltd | Preparing device for thin films |
| JPS56150187A (en) * | 1980-04-23 | 1981-11-20 | Hitachi Denshi Ltd | Method for heating vacuum vapor deposition boat |
| JPS57160119A (en) * | 1981-03-28 | 1982-10-02 | Mitsugi Hanabusa | Manufacture of amorphous silicon film by reactive laser sputtering |
-
1983
- 1983-12-02 JP JP22676983A patent/JPS60119710A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52126168A (en) * | 1976-04-15 | 1977-10-22 | Hitachi Ltd | Preparing device for thin films |
| JPS56150187A (en) * | 1980-04-23 | 1981-11-20 | Hitachi Denshi Ltd | Method for heating vacuum vapor deposition boat |
| JPS57160119A (en) * | 1981-03-28 | 1982-10-02 | Mitsugi Hanabusa | Manufacture of amorphous silicon film by reactive laser sputtering |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60119710A (en) | 1985-06-27 |
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