JPH0239578A - Light emitting element - Google Patents
Light emitting elementInfo
- Publication number
- JPH0239578A JPH0239578A JP63191136A JP19113688A JPH0239578A JP H0239578 A JPH0239578 A JP H0239578A JP 63191136 A JP63191136 A JP 63191136A JP 19113688 A JP19113688 A JP 19113688A JP H0239578 A JPH0239578 A JP H0239578A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light emitting
- layer
- substrate
- reflected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 34
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 150000001875 compounds Chemical class 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 6
- 125000005842 heteroatom Chemical group 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 229910052804 chromium Inorganic materials 0.000 abstract description 2
- 229910052759 nickel Inorganic materials 0.000 abstract description 2
- 229910052719 titanium Inorganic materials 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 8
- 230000007613 environmental effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- -1 GaAsP Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はアルミナ単結晶透明基板又はＳＯＳ透明基板を
用いた発光素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a light emitting device using an alumina single crystal transparent substrate or an SOS transparent substrate.
近時、ＬＥＤなどの発光素子は多方面の分野で用いられ
ており、これに伴って耐環境性に優れた発光素子が要求
される。例えば発光側面が物理的又は化学的に影響を受
は易い環境のなかで用いられる場合には耐蝕性、耐熱性
、機械的強度などに優れた透光性保護部材を発光側面に
形成しなければならない。In recent years, light emitting elements such as LEDs have been used in a wide variety of fields, and as a result, light emitting elements with excellent environmental resistance are required. For example, if the light-emitting side surface is used in an environment where it is susceptible to physical or chemical influences, a light-transmitting protective member with excellent corrosion resistance, heat resistance, mechanical strength, etc. must be formed on the light-emitting side surface. It won't happen.
上記発光素子はシリコン（Ｓｉ）基板又はガリウムヒ素
（ＧａＡｓ）基板の上にＧａ＋−ｍへ１゜Ａｓ／ＧａＡ
ｓなどがら成る発光ダイオードを形成した構造であり、
このような構成であれば、ＧａＡｓ基板やＳｉ基板の光
学的エネルギーバンドはＧａ＋−ｍ ＡＩＩＲ八ｓ／へ
ａＡｓが有する発光エネルギーに比べて小さくなり、そ
のために発光が基板によって吸収される。従って、その
発光ダイオードが発光する光は基板と反対方向を投光し
、前記透光性保護部材などを介して照射する。The above light emitting device is mounted on a silicon (Si) substrate or a gallium arsenide (GaAs) substrate with Ga+-m of 1°As/GaA.
It is a structure that forms a light emitting diode consisting of s, etc.
With such a configuration, the optical energy band of the GaAs substrate or the Si substrate is smaller than the emission energy of Ga+-m AIIR8s/aAs, and therefore, the emitted light is absorbed by the substrate. Therefore, the light emitted by the light emitting diode is emitted in the opposite direction to the substrate, and is irradiated through the light-transmitting protection member or the like.
また、ＧａＡｓ基板上にＬＰＥ法によりＧａ、−１ＩＡ
ｌ。In addition, Ga, -1IA
l.
Ａｓ／ＧａＡｓ層を約３００μｍの厚みで成長させ、次
いで、その層の上にＧａ、−、＾ｌ、、Ａｓ／ＧａＡｓ
層を形成し、これによって両者の間でＰＮ接合を形成し
、然る後、上記ＧａＡｓ基板を研磨により除去すること
が提案されている。An As/GaAs layer is grown to a thickness of about 300 μm, and then Ga,−,^l,, As/GaAs
It has been proposed to form a layer, thereby forming a PN junction between them, and then to remove the GaAs substrate by polishing.
しかし乍ら、このように製作した発光素子においては、
ＧａＡｌＡｓ層が強度的に劣っており、そのために発光
素子の信頼性が低下する。However, in the light emitting device manufactured in this way,
The GaAlAs layer has poor strength, which reduces the reliability of the light emitting device.
しかも、上記製作法を用いた場合、製造コストが著しく
上がるという問題点もある。Moreover, when the above-mentioned manufacturing method is used, there is also the problem that the manufacturing cost increases significantly.
また、発光素子の所要特性として一方向に対して光照射
量を大きくするということがあり、当然の事ながらその
要求は広い産業分野において益々高まっている。Further, a required characteristic of a light emitting element is that the amount of light irradiation should be increased in one direction, and as a matter of course, the demand for this is increasing in a wide range of industrial fields.
〔発明の目的〕
従って本発明は叙上に鑑みて案出されたものであり、そ
の目的は一方向の光照射量を大きくした高性能且つ省エ
ネ向の発光素子を提供することにある。[Object of the Invention] Therefore, the present invention has been devised in view of the above, and its object is to provide a high-performance, energy-saving light-emitting element that can increase the amount of light irradiated in one direction.
本発明の他の目的は優れた耐環境性及び信頼性並びに製
造コストの低減化を達成した発光素子を提供することに
ある。Another object of the present invention is to provide a light emitting device that achieves excellent environmental resistance and reliability as well as reduced manufacturing costs.
本発明の発光素子はアルミナ単結晶透明基板又はｓｏｓ
２明基板の一方の主面上にＰＮ接合から成る第■・■
族化合物半導体層をエピタキシャル成長させて発光部を
形成し、上記基板の他方の主面上に光反射手段を形成し
、上記発光部が基板側へ投光した光を上記光反射手段で
反射させ、その反射光並びに前記発光部が基板側と反対
方向へ投光した光が組合わされて照射されることを特徴
とする。The light emitting device of the present invention is an alumina single crystal transparent substrate or an SOS
Parts ■ and ■ consisting of a PN junction are formed on one main surface of the two-light substrate.
forming a light emitting section by epitaxially growing a group compound semiconductor layer, forming a light reflecting means on the other main surface of the substrate, and reflecting the light projected by the light emitting section toward the substrate side by the light reflecting means; It is characterized in that the reflected light and the light projected by the light emitting section in a direction opposite to the substrate side are combined and irradiated.
以下、本発明を上記第■・■族化合物半導体がＡｌＧａ
Ａｓ化合物半導体である場合を例にとって添付図面によ
り詳細に説明する。Hereinafter, the present invention will be described in which the Group Ⅰ and ② compound semiconductor is AlGa.
The case of an As compound semiconductor will be described in detail with reference to the accompanying drawings.
同図中、■はアルミナ単結晶又はＳＯ３（ｓ ｉ ｌ
１ｃｏｎｏｎ ５ａｐｐｈｉｒｅ）から成る透明基板で
あり、その基板１の上にはｐ”−ＡＩ、Ｇａ＋−８Ａｓ
１Ｍ２． ｐ−八］ｙＧａ。In the figure, ■ indicates alumina single crystal or SO3 (s i l
1conon 5apphire), and on the substrate 1 are p”-AI, Ga+-8As.
1M2. p-8]yGa.
、Ａｓ層３＋ ｐ Ａｌｚ Ｇａ＋−ｚ Ａ
ｓ層４＋ｎ −八Ｉｔ Ｇａ＋−ｔ Ａｓ層５＋
ＧａＡｓ層６が順次積層され、そして、ｐ” −Ａ１
、Ｇａ、□Ａｓ層２及びＧａＡｓ層６にはそれぞれ電極
７８が形成されている。, As layer 3+ p Alz Ga+-z A
s layer 4+n -8It Ga+-t As layer 5+
GaAs layers 6 are sequentially stacked, and p''-A1
, Ga, □As layer 2 and GaAs layer 6 each have an electrode 78 formed thereon.
尚、上記ＳＯ３基板を用いる場合、そのシリコン層の上
にエピタキシャル成長する。Note that when the SO3 substrate is used, epitaxial growth is performed on the silicon layer.
このような積層構造において、ｘ、 ｙ、 ｚ及びｔの
間を次のような大小関係に設定し、ダブルヘテロ接合を
形成する。In such a laminated structure, x, y, z, and t are set to have the following magnitude relationship to form a double heterojunction.
ｚ ＜ ｘ 、 ｙ 、ｔ
また、基板１の他の主面上にはＡＩ、Ｔｉ、Ｃｒ、Ｎｉ
Ｃｕなどの金属層９を形成する。z < x, y, t In addition, on the other main surface of the substrate 1, there are materials such as AI, Ti, Cr, and Ni.
A metal layer 9 such as Cu is formed.
上記構成の発光素子によれば、ｐ〜＾ｌ−Ｇａ＋−□Ａ
ｓ層４で発光した光はへ方向とＢ方向へ向かうが、Ｂ方
向の光は透明基板１の内部を透過し、金属層９で反射す
る。その反射光はＣ方向へ向がい、へ方向及びＣ方向が
組合わされて一方向の発光となる。According to the light emitting device having the above configuration, p~^l-Ga+-□A
The light emitted from the s-layer 4 goes in the direction B and the direction B, but the light in the direction B passes through the inside of the transparent substrate 1 and is reflected by the metal layer 9. The reflected light is directed in the C direction, and the C direction and C direction are combined to produce light emission in one direction.
（発明の効果〕
以上の通り、本発明の発光素子によれば、発光領域をも
つ第■・■族化合物半導体層を透明基板上に形成し、そ
の層が基板側へ照射する光も用いることかでき、これに
より、素子自体の光照射量を大きくでき、高性能且つ省
エネ向の発光素子が提供できる。(Effects of the Invention) As described above, according to the light emitting device of the present invention, a Group Ⅰ/Ⅲ compound semiconductor layer having a light emitting region is formed on a transparent substrate, and the light emitted from the layer toward the substrate side can also be used. As a result, the amount of light irradiated from the element itself can be increased, and a high-performance and energy-saving light-emitting element can be provided.
また、本発明の発光素子によれば、アルミナ単結晶又は
ＳＯＳの基板を用いているので耐食性、耐熱性、耐傷性
、機械的強度などに優れ、これにより、耐環境性及び信
頼性に優れた発光素子が提供できる。Further, according to the light emitting device of the present invention, since an alumina single crystal or SOS substrate is used, it has excellent corrosion resistance, heat resistance, scratch resistance, mechanical strength, etc., and thereby has excellent environmental resistance and reliability. A light emitting element can be provided.
尚、本発明の発光素子においては、第■・■族化合物が
ＧａＡｓ基板である場合を例にとって説明しでいるが、
それ以外の第■・■族化合物、例えばＧａＡｓＰ、 Ｉ
ｎＰなどの化合物を用いても何等差し支えない。Although the light emitting device of the present invention has been described using an example in which the Group Ⅰ/Ⅲ compound is a GaAs substrate,
Other Groups ■ and ■ compounds, such as GaAsP, I
There is no problem in using a compound such as nP.
添付図面は本発明発光素子の構成を示す概略図である。 １・・・透明基板 ７．８ ・・・電極 ９・・・金属層 特許出願人（６６３）京セラ株式会社 代表者安城欽寿 The accompanying drawings are schematic diagrams showing the structure of the light emitting device of the present invention. 1...Transparent substrate 7.8...Electrode 9...metal layer Patent applicant (663) Kyocera Corporation Representative Kinju Anjo
Claims (4)
合から成る第III・Ｖ族化合物半導体層をエピタキシャ
ル成長させて発光部を形成し、上記基板の他方の主面上
に光反射手段を形成し、上記発光部が基板側へ投光した
光を上記光反射手段で反射させ、その反射光並びに前記
発光部が基板側と反対方向へ投光した光が組合わされて
照射されることを特徴とする発光素子。(1) A group III/V compound semiconductor layer consisting of a PN junction is epitaxially grown on one main surface of an alumina single crystal transparent substrate to form a light emitting part, and a light reflecting means is provided on the other main surface of the substrate. and the light emitted by the light emitting part toward the substrate side is reflected by the light reflecting means, and the reflected light and the light emitted by the light emitting part in a direction opposite to the substrate side are combined and irradiated. Characteristic light-emitting elements.
基板である請求項（１）記載の発光素子。(2) The light emitting device according to claim (1), wherein the alumina single crystal transparent substrate is replaced with an SOS transparent substrate.
項（１）又は（２）記載の発光素子。(3) The light emitting device according to claim (1) or (2), wherein the light emitting section is formed of a double hetero semiconductor layer.
（２）記載の発光素子。(4) The light emitting device according to claim 1 or 2, wherein the light reflecting means is a metal layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19113688A JP2759269B2 (en) | 1988-07-29 | 1988-07-29 | Light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19113688A JP2759269B2 (en) | 1988-07-29 | 1988-07-29 | Light emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0239578A true JPH0239578A (en) | 1990-02-08 |
| JP2759269B2 JP2759269B2 (en) | 1998-05-28 |
Family
ID=16269483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19113688A Expired - Fee Related JP2759269B2 (en) | 1988-07-29 | 1988-07-29 | Light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2759269B2 (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0927639A (en) * | 1995-07-12 | 1997-01-28 | Toshiba Corp | Semiconductor device |
| JPH09298313A (en) * | 1996-04-30 | 1997-11-18 | Rohm Co Ltd | Semiconductor light emitting element and manufacture thereof |
| US5798536A (en) * | 1996-01-25 | 1998-08-25 | Rohm Co., Ltd. | Light-emitting semiconductor device and method for manufacturing the same |
| US6730940B1 (en) * | 2002-10-29 | 2004-05-04 | Lumileds Lighting U.S., Llc | Enhanced brightness light emitting device spot emitter |
| US7080932B2 (en) | 2004-01-26 | 2006-07-25 | Philips Lumileds Lighting Company, Llc | LED with an optical system to increase luminance by recycling emitted light |
| US9632537B2 (en) | 2013-09-23 | 2017-04-25 | Apple Inc. | Electronic component embedded in ceramic material |
| US9678540B2 (en) | 2013-09-23 | 2017-06-13 | Apple Inc. | Electronic component embedded in ceramic material |
| US9692113B2 (en) | 2014-02-12 | 2017-06-27 | Apple Inc. | Antenna on sapphire structure |
| US10052848B2 (en) | 2012-03-06 | 2018-08-21 | Apple Inc. | Sapphire laminates |
| US10386889B2 (en) | 2013-12-11 | 2019-08-20 | Apple Inc. | Cover glass for an electronic device |
| US10406634B2 (en) | 2015-07-01 | 2019-09-10 | Apple Inc. | Enhancing strength in laser cutting of ceramic components |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51137393A (en) * | 1975-05-22 | 1976-11-27 | Mitsubishi Electric Corp | Manufacturing method for semiconductor light emitting device |
| JPS59127888A (en) * | 1983-01-12 | 1984-07-23 | Matsushita Electric Ind Co Ltd | Light-emitting diode |
-
1988
- 1988-07-29 JP JP19113688A patent/JP2759269B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51137393A (en) * | 1975-05-22 | 1976-11-27 | Mitsubishi Electric Corp | Manufacturing method for semiconductor light emitting device |
| JPS59127888A (en) * | 1983-01-12 | 1984-07-23 | Matsushita Electric Ind Co Ltd | Light-emitting diode |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0927639A (en) * | 1995-07-12 | 1997-01-28 | Toshiba Corp | Semiconductor device |
| US5798536A (en) * | 1996-01-25 | 1998-08-25 | Rohm Co., Ltd. | Light-emitting semiconductor device and method for manufacturing the same |
| JPH09298313A (en) * | 1996-04-30 | 1997-11-18 | Rohm Co Ltd | Semiconductor light emitting element and manufacture thereof |
| US6730940B1 (en) * | 2002-10-29 | 2004-05-04 | Lumileds Lighting U.S., Llc | Enhanced brightness light emitting device spot emitter |
| US6969946B2 (en) * | 2002-10-29 | 2005-11-29 | Lumileds Lighting U.S., Llc | Enhanced brightness light emitting device spot emitter |
| US7080932B2 (en) | 2004-01-26 | 2006-07-25 | Philips Lumileds Lighting Company, Llc | LED with an optical system to increase luminance by recycling emitted light |
| US10052848B2 (en) | 2012-03-06 | 2018-08-21 | Apple Inc. | Sapphire laminates |
| US9632537B2 (en) | 2013-09-23 | 2017-04-25 | Apple Inc. | Electronic component embedded in ceramic material |
| US9678540B2 (en) | 2013-09-23 | 2017-06-13 | Apple Inc. | Electronic component embedded in ceramic material |
| US10386889B2 (en) | 2013-12-11 | 2019-08-20 | Apple Inc. | Cover glass for an electronic device |
| US9692113B2 (en) | 2014-02-12 | 2017-06-27 | Apple Inc. | Antenna on sapphire structure |
| US10406634B2 (en) | 2015-07-01 | 2019-09-10 | Apple Inc. | Enhancing strength in laser cutting of ceramic components |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2759269B2 (en) | 1998-05-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5166761A (en) | Tunnel junction multiple wavelength light-emitting diodes | |
| US6110277A (en) | Process for the fabrication of epitaxial layers of a compound semiconductor on monocrystal silicon and light-emitting diode fabricated therefrom | |
| JP3812368B2 (en) | Group III nitride compound semiconductor device and method for manufacturing the same | |
| JP5354622B2 (en) | Semiconductor light emitting diode | |
| AU2002257318A1 (en) | Group iii nitride based light emitting diode structures with a quantum well and superlattice | |
| JPH0239578A (en) | Light emitting element | |
| JPH05251739A (en) | Semiconductor light emitting device | |
| JP7432024B2 (en) | infrared light emitting diode | |
| JP3264563B2 (en) | Semiconductor light emitting device and method of manufacturing the same | |
| JP2010098068A (en) | Light emitting diode, manufacturing method thereof, and lamp | |
| US20120168717A1 (en) | Light emitting diode, light emitting diode lamp, and illuminating apparatus | |
| JP3633018B2 (en) | Semiconductor light emitting device | |
| JPH04361572A (en) | Semiconductor light emitting element | |
| JPH0794784A (en) | Blue light-emitting device | |
| JPH08298341A (en) | Light emitting diode | |
| JP2003133587A (en) | Light emitting diode | |
| JPH0883928A (en) | Semiconductor light emitting element and manufacture thereof | |
| JP2958182B2 (en) | Semiconductor light emitting device | |
| GB1440846A (en) | Efficiency light emitting diode | |
| JPH0389568A (en) | Light emitting diode and manufacture thereof | |
| JPS59127888A (en) | Light-emitting diode | |
| Réti et al. | MBE technology in the colourful LED and solar cell production | |
| JPS62250679A (en) | Light-emitting diode | |
| JPH01296678A (en) | Manufacture of semiconductor heterojunction | |
| JPH01214176A (en) | Light-emitting diode array |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |