JPH023922A - Dry etching method - Google Patents
Dry etching methodInfo
- Publication number
- JPH023922A JPH023922A JP15318688A JP15318688A JPH023922A JP H023922 A JPH023922 A JP H023922A JP 15318688 A JP15318688 A JP 15318688A JP 15318688 A JP15318688 A JP 15318688A JP H023922 A JPH023922 A JP H023922A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- gas
- inert gas
- dry etching
- material containing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312 dry etching Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 title claims description 8
- 238000005530 etching Methods 0.000 claims abstract description 17
- 239000011261 inert gas Substances 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims abstract description 10
- 229910052737 gold Inorganic materials 0.000 claims abstract description 5
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 3
- 239000000126 substance Substances 0.000 claims description 9
- -1 polyethylene Polymers 0.000 claims description 4
- 229920000728 polyester Polymers 0.000 claims description 3
- 239000004698 Polyethylene Substances 0.000 claims description 2
- 239000004743 Polypropylene Substances 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- 229920001155 polypropylene Polymers 0.000 claims description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 229930182556 Polyacetal Natural products 0.000 claims 1
- 239000004962 Polyamide-imide Substances 0.000 claims 1
- 239000004642 Polyimide Substances 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229920002312 polyamide-imide Polymers 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 229920006324 polyoxymethylene Polymers 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 7
- 229910052796 boron Inorganic materials 0.000 abstract description 5
- 229910052745 lead Inorganic materials 0.000 abstract description 5
- 229910052793 cadmium Inorganic materials 0.000 abstract description 4
- 229910052785 arsenic Inorganic materials 0.000 abstract description 3
- 239000004033 plastic Substances 0.000 abstract description 3
- 229920003023 plastic Polymers 0.000 abstract description 3
- 229910052718 tin Inorganic materials 0.000 abstract description 3
- 238000001039 wet etching Methods 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明ハエレクトロルミネセンスディスプレー等の発光
体として使用されるＺｎＳや透明導電膜であるＩＴＯ膜
等のパターンを形成するドライエツチング方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a dry etching method for forming patterns on ZnS, transparent conductive ITO films, etc. used as light emitters in electroluminescent displays and the like.
従来の技術
従来、エレクトロルミネセンスの製造工程では、ＺｎＳ
膜のパターン形成は、硝酸とリン酸と酢酸の混合液を
主体とする湿式化学エツチングにより行なわれていた。Conventional technology Traditionally, in the manufacturing process of electroluminescence, ZnS
Film pattern formation was performed by wet chemical etching using a mixture of nitric acid, phosphoric acid, and acetic acid as the main ingredient.
発明が解決しようとする課題
しかし、湿式化学エツチングでは、エツチングが等方的
に進行するため、マスク下部までＺｎＳ膜のエツチング
が進行し、精度の良いパターン形成は困難であった。Problems to be Solved by the Invention However, in wet chemical etching, the etching progresses isotropically, so that the etching of the ZnS film progresses to the bottom of the mask, making it difficult to form a pattern with high precision.
課題を解決するための手段
上記問題点を解決するため、本発明は反応室内にＣとＨ
とを含有する物質を置き、不活性ガスまたはＮ２ガスを
反応室内に導入してプラズマを発生させ、Ａｄ、Ａｓ、
Ｂ、Ｐｂ、Ｉｎ、Ｃｄ、Ｓｎ、Ａｕ、Ｚｎといった元素
を含む物質をドライエツチングするものである。Means for Solving the Problems In order to solve the above problems, the present invention provides C and H in the reaction chamber.
A substance containing Ad, As, and inert gas or N2 gas is introduced into the reaction chamber to generate plasma.
This method is used to dry-etch materials containing elements such as B, Pb, In, Cd, Sn, Au, and Zn.
作用
本発明の作用は、ＣとＨを含有する物質を不活性ガスま
たはＮ２ガヌプラズマの中にさらすことにより、プラズ
マ中に生じたＨ 、ＣＨ２，ＣＨ３といったイオンまた
はクジカルと反応して、ＺｎＳやＩＴＯがＺｎＨＣＨ３
，Ｚｎ （ＣＨ３） ２． Ｉｎ（ＣＨ３）３゜Ｓｎ（
ＣＨ３）４といった水素化アルキル化合物を生じると考
えられる。これらの生成物の沸点は低く、たとえばＺ
ｎ （ＣＨ３） ２で４６℃であり、蒸気圧が高いので
ガスとして排気されることによりエツチングされる６、
不活性ガスを用いることにより、不活性ガスのイオンの
スパック効果によシ異方性エツチングが得られる。Effect The effect of the present invention is that when a substance containing C and H is exposed to an inert gas or N2 Ganu plasma, it reacts with ions such as H2, CH2, CH3 or gas produced in the plasma, and forms ZnS and ITO. is ZnHCH3
, Zn (CH3) 2. In(CH3)3゜Sn(
It is believed that hydrogenated alkyl compounds such as CH3)4 are produced. The boiling points of these products are low, for example Z
n (CH3) 2 is 46°C and has a high vapor pressure, so it is etched by being exhausted as a gas6.
By using an inert gas, anisotropic etching can be obtained due to the spattering effect of ions of the inert gas.
実施例
以下本発明の実施例のドライエツチング方法について図
面を参照しながら説明する。EXAMPLE Hereinafter, a dry etching method according to an example of the present invention will be explained with reference to the drawings.
本発明の実施例におけるドライエツチング装置の構成は
第１図に示した。１は真空容器、２は絶縁物、３は電極
で上に被エツチング物４が載置され、かつ高周波電源５
が接続されている。６はガス導入口、アは排気口、８は
接地電極、９はＣとＨを含む物質であるプラスチックの
リングである。The structure of a dry etching apparatus according to an embodiment of the present invention is shown in FIG. 1 is a vacuum container, 2 is an insulator, 3 is an electrode, on which the object to be etched 4 is placed, and a high frequency power source 5.
is connected. 6 is a gas inlet, A is an exhaust port, 8 is a ground electrode, and 9 is a plastic ring containing C and H.
エツチングサンプルは、ガラス基板上にＺｎＳ 膜を５
０００人形成し、その上にマスク材となるレジスト膜（
ポジタイプ）を２μｍ塗布し、通常の露光、現像でマス
クパターンを形成した。The etching sample consists of five ZnS films on a glass substrate.
000 people are formed, and a resist film (
Positive type) was applied to a thickness of 2 μm, and a mask pattern was formed by normal exposure and development.
エツチング条件は次の通シである。The etching conditions are as follows.
エッチングガｙ、： Ａｒ：２０ＳＣＣＭエツチング圧
カニ ２〜３０ ｍ Ｔ ｏ ｒ ｒ高周波電力 ：
６００Ｗ
以上のようなエツチング条件によるドライエツチング方
法について、以下第１表を用いてその結果を説明する。Etching gas: Ar: 20SCCM Etching pressure: 2 to 30 m Torr High frequency power:
The results of the dry etching method using etching conditions such as 600 W or more will be explained below using Table 1.
第１表は上記エツチング条件でプラスチックの種類をか
えた時のＺｎＳ 膜のエツチング速度と対レジスト選
択比を示すものである。アンダーカットは０．３μｍと
小さかった。Table 1 shows the etching rate and resist selectivity of the ZnS film when the type of plastic was changed under the above etching conditions. The undercut was as small as 0.3 μm.
次に、透明導電膜であるＩＴＯを前記と同一条件でエツ
チングした結果、エツチング速度約１５０人／分を得る
ことができた。Next, ITO, which is a transparent conductive film, was etched under the same conditions as above, and as a result, an etching rate of about 150 people/min was obtained.
なお、ＣとＨを含む物質としてポリエチレン。Note that polyethylene is a substance containing C and H.
ポリプロピレン、ポリアミド、ポリエステル等ヲフィル
ム状あるいは塊状で使用したが、はぼ同様のエツチング
特性が得られた。ＣとＨを含む物質は電極３の上で被エ
ツチング物の周囲に置くのが歴も効果的である。また被
エツチング物としてＺｎＳ、Ｉ Ｔ○以外にＡｄ、Ａｓ
、Ｂ、Ｐｂ、Ｃｄ、Ａｕを含む物質も前記条件でエツチ
ングできることがわかった。Polypropylene, polyamide, polyester, etc. were used in the form of films or blocks, and the same etching properties as those of polyester were obtained. It is also effective to place the substance containing C and H on the electrode 3 around the object to be etched. In addition to ZnS and IT○, materials to be etched include Ad and As.
, B, Pb, Cd, and Au can also be etched under the above conditions.
また不活性ガスはＡｒとしたが、不活性ガスはＨｅ と
しても同様の結果が得られた。Furthermore, although Ar was used as the inert gas, similar results were obtained when He was used as the inert gas.
発明の効果
以上述べたように反応室内にＣとＨを含有する物質を置
き不活性ガスプラズマを発生させることによシ、Ａｄ、
Ａｓ、Ｂ、Ｐｂ、Ｉｎ、Ｃｄ、Ｓｎ、Ａｕなどを含む物
質をドライエツチングすることができる。Effects of the Invention As mentioned above, by placing a substance containing C and H in the reaction chamber and generating an inert gas plasma, Ad,
Materials containing As, B, Pb, In, Cd, Sn, Au, etc. can be dry etched.
ドライエツチングを行なうことにより、ウェットエツチ
ングに比べて、寸法精度の良いエツチングが出きる。By performing dry etching, it is possible to produce etching with better dimensional accuracy than wet etching.
聯＃図は本発明で使用したドライエツチング装置の構成
図である。
１・・・・・・真空容器、３・・・・・・電極、４・・
・・・・被エツチング物、５・・・・・・高周波電源、
６・・・・・・ガス供給孔、８−・・・・・電極、９・
・・・・・ＣとＨとを含有する物質。Figure 1 is a block diagram of a dry etching apparatus used in the present invention. 1... Vacuum vessel, 3... Electrode, 4...
...Object to be etched, 5...High frequency power supply,
6... Gas supply hole, 8-... Electrode, 9...
...A substance containing C and H.
Claims (3)
性ガスまたはＮ＿２ガスを反応室内に導入してプラズマ
を発生させてＡｌ、Ａｓ、Ｂ、Ｐｂ、Ｉｎ、Ｃｄ、Ｓｎ
、ＡｕおよびＺｎを含む物質をエッチングすることを特
徴とするドライエッチング方法。(1) A substance containing C and H is placed in a reaction chamber, and an inert gas or N_2 gas is introduced into the reaction chamber to generate plasma.
, a dry etching method characterized by etching a substance containing Au and Zn.
レン、ポリエステル、ポリアセタール、ポリアミド、ポ
リイミド等の高分子化合物であることを特徴とする請求
項１記載のドライエッチング方法。(2) The dry etching method according to claim 1, wherein the substance containing C and H is a polymer compound such as polyethylene, polypropylene, polyester, polyacetal, polyamide, or polyimide.
する請求項１記載のドライエッチング方法。(3) The dry etching method according to claim 1, characterized in that argon is used as the inert gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15318688A JPH023922A (en) | 1988-06-21 | 1988-06-21 | Dry etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15318688A JPH023922A (en) | 1988-06-21 | 1988-06-21 | Dry etching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH023922A true JPH023922A (en) | 1990-01-09 |
Family
ID=15556926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15318688A Pending JPH023922A (en) | 1988-06-21 | 1988-06-21 | Dry etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH023922A (en) |
-
1988
- 1988-06-21 JP JP15318688A patent/JPH023922A/en active Pending
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