JPH0239104B2 - - Google Patents

Info

Publication number
JPH0239104B2
JPH0239104B2 JP55171665A JP17166580A JPH0239104B2 JP H0239104 B2 JPH0239104 B2 JP H0239104B2 JP 55171665 A JP55171665 A JP 55171665A JP 17166580 A JP17166580 A JP 17166580A JP H0239104 B2 JPH0239104 B2 JP H0239104B2
Authority
JP
Japan
Prior art keywords
semiconductor
semiconductor element
degrees
crystal
stress
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55171665A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5795673A (en
Inventor
Koji Suzuki
Toshio Aoki
Shigeru Komatsu
Satoshi Takahashi
Takao Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP55171665A priority Critical patent/JPS5795673A/ja
Publication of JPS5795673A publication Critical patent/JPS5795673A/ja
Publication of JPH0239104B2 publication Critical patent/JPH0239104B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure

Landscapes

  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
JP55171665A 1980-12-05 1980-12-05 Pressure sensitive semiconductor device Granted JPS5795673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55171665A JPS5795673A (en) 1980-12-05 1980-12-05 Pressure sensitive semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55171665A JPS5795673A (en) 1980-12-05 1980-12-05 Pressure sensitive semiconductor device

Publications (2)

Publication Number Publication Date
JPS5795673A JPS5795673A (en) 1982-06-14
JPH0239104B2 true JPH0239104B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-09-04

Family

ID=15927424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55171665A Granted JPS5795673A (en) 1980-12-05 1980-12-05 Pressure sensitive semiconductor device

Country Status (1)

Country Link
JP (1) JPS5795673A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0195232B1 (en) * 1985-03-20 1991-12-11 Hitachi, Ltd. Piezoresistive strain sensing device
JP2670048B2 (ja) * 1986-10-30 1997-10-29 株式会社リコー 力検出装置
EP2643669A4 (en) * 2010-11-24 2015-10-28 Univ Alberta NEW INTEGRATED 3D STRAIN AND TEMPERATURE SENSOR BY HANDLING A SILICON DOPING
CN103575432B (zh) * 2013-11-22 2015-09-02 沈阳工业大学 一种柔性三维接触力矩阵传感装置

Also Published As

Publication number Publication date
JPS5795673A (en) 1982-06-14

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