JPH0235302B2 - - Google Patents

Info

Publication number
JPH0235302B2
JPH0235302B2 JP59231243A JP23124384A JPH0235302B2 JP H0235302 B2 JPH0235302 B2 JP H0235302B2 JP 59231243 A JP59231243 A JP 59231243A JP 23124384 A JP23124384 A JP 23124384A JP H0235302 B2 JPH0235302 B2 JP H0235302B2
Authority
JP
Japan
Prior art keywords
layer
light
atoms
receiving member
ocn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59231243A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61110149A (ja
Inventor
Keishi Saito
Masahiro Kanai
Tetsuo Sueda
Teruo Misumi
Yoshio Tsuezuki
Kyosuke Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP59231243A priority Critical patent/JPS61110149A/ja
Priority to US06/726,768 priority patent/US4705732A/en
Priority to EP85302937A priority patent/EP0161848B1/en
Priority to DE8585302937T priority patent/DE3581105D1/de
Priority to CA000480227A priority patent/CA1256735A/en
Priority to AU41704/85A priority patent/AU586164C/en
Publication of JPS61110149A publication Critical patent/JPS61110149A/ja
Publication of JPH0235302B2 publication Critical patent/JPH0235302B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G03G5/08228—Silicon-based comprising one or two silicon based layers at least one with varying composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/10—Bases for charge-receiving or other layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/10—Bases for charge-receiving or other layers
    • G03G5/102—Bases for charge-receiving or other layers consisting of or comprising metals

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)
JP59231243A 1984-04-27 1984-11-05 電子写真用光受容部材 Granted JPS61110149A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP59231243A JPS61110149A (ja) 1984-11-05 1984-11-05 電子写真用光受容部材
US06/726,768 US4705732A (en) 1984-04-27 1985-04-24 Member having substrate with projecting portions at surface and light receiving layer of amorphous silicon
EP85302937A EP0161848B1 (en) 1984-04-27 1985-04-25 Light-receiving member
DE8585302937T DE3581105D1 (de) 1984-04-27 1985-04-25 Photorezeptorelement.
CA000480227A CA1256735A (en) 1984-04-27 1985-04-26 Light-receiving member
AU41704/85A AU586164C (en) 1984-04-27 1985-04-26 Light receiving member

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59231243A JPS61110149A (ja) 1984-11-05 1984-11-05 電子写真用光受容部材

Publications (2)

Publication Number Publication Date
JPS61110149A JPS61110149A (ja) 1986-05-28
JPH0235302B2 true JPH0235302B2 (en, 2012) 1990-08-09

Family

ID=16920563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59231243A Granted JPS61110149A (ja) 1984-04-27 1984-11-05 電子写真用光受容部材

Country Status (1)

Country Link
JP (1) JPS61110149A (en, 2012)

Also Published As

Publication number Publication date
JPS61110149A (ja) 1986-05-28

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