JPH0233890A - Manufacture of thin film electroluminescence element - Google Patents
Manufacture of thin film electroluminescence elementInfo
- Publication number
- JPH0233890A JPH0233890A JP63181853A JP18185388A JPH0233890A JP H0233890 A JPH0233890 A JP H0233890A JP 63181853 A JP63181853 A JP 63181853A JP 18185388 A JP18185388 A JP 18185388A JP H0233890 A JPH0233890 A JP H0233890A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- upper electrode
- insulating layer
- emitting layer
- electroluminescence element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000005401 electroluminescence Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 claims abstract description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 13
- 239000007864 aqueous solution Substances 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 6
- 238000000992 sputter etching Methods 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims abstract description 3
- 238000000206 photolithography Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical group ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 abstract description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 4
- 239000007789 gas Substances 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 3
- 229910052786 argon Inorganic materials 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 229910052684 Cerium Inorganic materials 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001017 electron-beam sputter deposition Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- 239000005132 Calcium sulfide based phosphorescent agent Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229940117389 dichlorobenzene Drugs 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- -1 phosphides Chemical class 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、表示品質の優れた平面デイスプレィである薄
膜ＥＬ素子に係り、特に、カラー表示を可能にする高輝
度、高精細薄膜ＥＬ素子の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film EL device which is a flat display with excellent display quality, and particularly relates to a thin film EL device with high brightness and high definition that enables color display. Regarding the manufacturing method.
薄膜ＥＬ素子は自己発光型で表示品質の良い平面デイス
プレィとして、コンピュータ端末や計測装置の表示部に
用いられている。薄膜ＥＬ素子の構造を第２図の模式図
によって説明する。ガラス基板１の上にＩ Ｔ Ｏ（Ｔ
ｎｄｉｕｍ Ｔｉｎ ０ｘｉｄｅ）などの下部透明電極
２がストライプ状に形成されている。Thin film EL elements are used as self-luminous flat displays with good display quality in display units of computer terminals and measuring devices. The structure of the thin film EL element will be explained with reference to the schematic diagram of FIG. I T O (T
A lower transparent electrode 2 made of ndium tin oxide or the like is formed in a stripe shape.
この上にＳｉ○２＋ Ａ Ｑ ２０３． Ｔ ａ ２０
６．５ｒＴｉＯａ＋ＢａＴａｚＯｅ、５ｉａＮａ、Ｙ２
Ｏ３、あるいは、これらの組み合わせからなる第一絶縁
層３ａが電子ビーム蒸着、あるいは、スパッタリング法
により形成される。この上にはＺｎＳ、ＳｒＳ、ＣａＳ
。On top of this, Si○2+ A Q 203. Ta 20
6.5rTiOa+BaTazOe, 5iaNa, Y2
The first insulating layer 3a made of O3 or a combination thereof is formed by electron beam evaporation or sputtering. On top of this are ZnS, SrS, CaS
.
ＢａＳなどを母体とし、これに活性物質としてＰｒ、Ｍ
ｎ、Ｔｂ、Ｃｅ、Ｅｕ、または、これらの硫化物、燐化
物、ハロゲン化物などを適量混合した発光層４が電子ビ
ーム蒸着、スパッタリング、あるいは、ＣＶＤ （化学
気相成長法）により形成される。さらに、この上には第
一絶縁層３ａと同様な第二絶縁層３ｂが形成され、その
上にＡｆｌ。BaS etc. are used as a matrix, and Pr and M are added as active substances to this base material.
A light-emitting layer 4 made of a mixture of n, Tb, Ce, Eu, or their sulfides, phosphides, halides, etc. in appropriate amounts is formed by electron beam evaporation, sputtering, or CVD (chemical vapor deposition). Furthermore, a second insulating layer 3b similar to the first insulating layer 3a is formed on this, and Afl.
Ｎ ｊ、 、 Ａ ｕ 、 Ｔ Ｔ Ｏ等の上部電極５
が下部透明電極２と直交するようにストライプ状に形成
されている。このような薄膜ＥＬ素子を、高品質化する
ためには、下部透明電極２と上部電極５を高精細に形成
する必要がある。下部透明電極２と上部電極５を最も簡
便な方法で形成するには、電極形状に作製したメタルマ
スクを用いてマスク蒸着する方法が考えられるが１水力
式では、１０インチ角程度の素子になると、１ｍｍ以下
のストライプを形成することは困難である。そのため、
三本／ｍｍ以上の電極を形成するためには、フ第１へリ
ン技術が重要になる。なお、上部電極をフォトリソ工程
でウェットエツチングするときに、発光層４上にピンホ
ールなどの欠陥のない第二絶縁７ｉ３ｂが形成できれば
問題は生じないものと考えられる。しかし、無欠陥の第
二絶縁Ｍ３ｂを形成するには、絶縁層を厚くすることが
考えられるが、絶縁層を厚くするとＥＬ素子の駆動電圧
が高くなるという問題が生じる。そのため、１９８３
Ｓ Ｉ ＤＳｅｍｉｎａｒＬｅｃｔｕｒｅ Ｎｏｔｅ
ｓ、 ＶｏＱ、１． Ｐ １〜Ｐ２８． Ｍａｙ９゜１
９８３でも発光層４の母体材料としてＺｎＳを用いた場
合に、上部電極５をウェットエツチングすると第二絶縁
層３ｂが発光層４からはく附するため、エツチング液の
選択をして対策したと記載している。Upper electrode 5 such as Nj, , Au, TTO, etc.
are formed in a stripe shape so as to be perpendicular to the lower transparent electrode 2. In order to improve the quality of such a thin film EL element, it is necessary to form the lower transparent electrode 2 and the upper electrode 5 with high precision. The easiest way to form the lower transparent electrode 2 and the upper electrode 5 is to use a metal mask made in the shape of an electrode to perform mask evaporation. , it is difficult to form stripes of 1 mm or less. Therefore,
In order to form electrodes of 3 electrodes/mm or more, the first layer technology becomes important. Note that if the second insulating layer 7i3b without defects such as pinholes can be formed on the light emitting layer 4 when wet etching the upper electrode in the photolithography process, no problem will occur. However, in order to form the defect-free second insulating layer M3b, it is possible to make the insulating layer thicker, but if the insulating layer is made thicker, the problem arises that the driving voltage of the EL element becomes higher. Therefore, in 1983
S I DSeminar Lecture Note
s, VoQ, 1. P1-P28. May9゜1
983 also states that when ZnS is used as the base material of the light-emitting layer 4, wet etching of the upper electrode 5 causes the second insulating layer 3b to peel off from the light-emitting layer 4, so a countermeasure was taken by selecting an etching solution. are doing.
上記従来技術は、発光層材料として黄橙色を示すＺｎＳ
：Ｍｎを用いたものであり、カラーＥＬ素子の発光母体
材料として用いられるＳ ｒＳ。The above conventional technology uses ZnS, which exhibits yellow-orange color, as the light-emitting layer material.
: SrS, which uses Mn and is used as a luminescent matrix material of color EL elements.
ＣａＳ及びＢａＳなどについては考慮がされていない。No consideration is given to CaS, BaS, etc.
これらの材料は、予備検討の結果、第二絶縁層のピンホ
ール欠陥を通して浸み込んだ水に容易に溶解されるとい
う間層がある。そのため、Ｌ部電極形成時のフォトリソ
工程で、現像、リンス液として苛性ソーダ水溶液、及び
、水を使用するポジ型レジストは使用できないこと、及
び、水溶液を用いるウェットエツチングはできないこと
が明らかになった。Preliminary studies have shown that these materials are easily dissolved by water seeping through pinhole defects in the second insulating layer. Therefore, it has become clear that a positive resist that uses a caustic soda aqueous solution and water as a developing and rinsing solution cannot be used in the photolithography process when forming the L electrode, and that wet etching using an aqueous solution is not possible.
本発明の目的は、高輝度、高精細薄膜カラーＥＬ素子の
製造法を提供することにある。An object of the present invention is to provide a method for manufacturing a high-brightness, high-definition thin film color EL device.
上記目的は、上部電極形成用フォトレジストとしてネガ
型レジストを用い、電極のエツチングはドライエツチン
グ法を採用すること、及び、リフトオフ法を採用するこ
とにより達成できる。The above object can be achieved by using a negative resist as a photoresist for forming the upper electrode, and by employing a dry etching method and a lift-off method for etching the electrode.
ネガ型フォトレジストは、現像、リンス及びはく離液と
してキシレン、酢酸エステル、及び、○−ジクロルベン
ゼンなどを主成分である有機溶剤であり、水溶液は使用
しない。また、エツチング工程では、ガスイオンを利用
したドライエツチング法を用いる。これによって、発光
層と水溶液との接触を防止できるので、上部電極を問題
なく形成することができる。Negative photoresists use organic solvents whose main components are xylene, acetate, and -dichlorobenzene as developing, rinsing, and stripping solutions, and do not use aqueous solutions. In the etching process, a dry etching method using gas ions is used. This prevents contact between the light-emitting layer and the aqueous solution, so the upper electrode can be formed without any problem.
以下、本発明の一実施例を第１図及び第２図により説明
する。An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.
第２図に示すように、厚さ１ｍｍのコーニング＃７０５
９ガラス基板１上に下部透明電極として用いられるＩＴ
○を電子ビーム蒸着法によって０．２５μｍの厚さに形
成し、次に、幅２５０μｍ、間隔１１００ＩＬの下部透
明電極２をストライプ状にフォトエツチングする。この
上に第一絶縁層３ａとして用いられるＴ ａ ２０５（
厚さ０．４μｍ）、５ｉＯｚ（０，１μｍ）積層膜をス
パッタリングにより計０．５μｍの厚さに形成した。次
に、発光層４としてＳｒＳ：Ｐｒ、Ｃｅを電子ビーム蒸
着法により０．５〜１．０μｍの厚さに形成した後。Corning #705 with a thickness of 1 mm, as shown in Figure 2.
9 IT used as a lower transparent electrode on glass substrate 1
○ is formed to a thickness of 0.25 μm by electron beam evaporation, and then lower transparent electrodes 2 having a width of 250 μm and an interval of 1100 IL are photo-etched in a stripe shape. On top of this, T a 205 (
A laminated film of 5iOz (0.1 μm) was formed by sputtering to a total thickness of 0.5 μm. Next, SrS:Pr, Ce was formed as a light emitting layer 4 to a thickness of 0.5 to 1.0 μm by electron beam evaporation.
再び、第二絶縁層３ｂとして用いられるＴａｚＯａ（０
，４μｍ）とＳ ｉ ０２（０，１μｍ）の積層膜をス
パッタリングにより形成した。その上に、上部電極５と
して用いられるＡＱを抵抗加熱蒸着法により厚さ０．２
５μｍ形成する。Again, TazOa (0
, 4 μm) and S i 02 (0.1 μm) were formed by sputtering. On top of that, AQ, which will be used as the upper electrode 5, is deposited to a thickness of 0.2
Form 5 μm.
次に、ＡＱ蒸着後、上部電極５が形成されるまでのフォ
トリソ工程を第１図により説明する。フォトリソ工程の
（ａ）は上部電極５用ＡＱを全面蒸着後の断面図である
。（ｂ）はフォトレジストパターン６形成後の工程を示
すが、フォトレジストはスピンナで回転塗布した後、仮
焼成、露光工程を経て、キシレン、酢酸エステルを主成
分とする溶剤で現像、リンスを施し、本焼成することに
よりフォトレジストパターン６が得られる。次に、アル
ゴンガスをエツチングガスとしたイオンミリング装置を
用いて、（ｃ）に示すように、フォトレジストパターン
６のない部分のＡ Ｑ、膜を除去する。その後、Ｏ−ジ
クロルベンゼンを主成分とするはく離液でフォトレジス
トパターン６を除去し。Next, the photolithography process from AQ deposition to formation of the upper electrode 5 will be explained with reference to FIG. (a) of the photolithography process is a cross-sectional view after AQ for the upper electrode 5 is deposited on the entire surface. (b) shows the process after the formation of the photoresist pattern 6, in which the photoresist is spin-coated using a spinner, undergoes a temporary baking and exposure process, and is developed and rinsed with a solvent containing xylene and acetate as the main components. , a photoresist pattern 6 is obtained by main baking. Next, using an ion milling device using argon gas as an etching gas, as shown in FIG. Thereafter, the photoresist pattern 6 was removed using a stripper containing O-dichlorobenzene as a main component.
その後、アルコールで洗浄し、（ｄ）に示す構造の薄膜
ＥＬ素子が得られる。Thereafter, it is washed with alcohol to obtain a thin film EL element having the structure shown in (d).
本発明により作製した薄膜ＥＬ素子の部分拡大図を第３
図に示す。発光層４溶解、あるいは、第二絶縁層３ｂの
はく離も認められない。また、本ＥＬ素子の電極間に周
波数ＩＫＨｚ、パルス幅４０μｓｅｃで電圧を徐々に上
げて行き、輝度が飽和する電圧でエージングした後の輝
度−電圧特性を測定した。得られた輝度−電圧特性は、
第４図に示すように、輝度はしきい値電圧Ｖｔｈ＋６０
Ｖの電圧で約４００ｃｄ／ｍ２が得られ、フォトリソ工
程によるダメージもなく良好な薄膜ＥＬ素子を製造する
ことができた。A partially enlarged view of the thin film EL device manufactured according to the present invention is shown in Figure 3.
As shown in the figure. No dissolution of the light emitting layer 4 or peeling of the second insulating layer 3b was observed. Further, the voltage was gradually increased between the electrodes of the EL element at a frequency of IKHz and a pulse width of 40 μsec, and the luminance-voltage characteristics were measured after aging at a voltage at which the luminance was saturated. The brightness-voltage characteristics obtained are:
As shown in FIG. 4, the brightness is the threshold voltage Vth+60
Approximately 400 cd/m2 was obtained at a voltage of V, and a good thin film EL element could be manufactured without any damage caused by the photolithography process.
以上は発光層としてＳｒＳ：Ｐｒ、Ｃｅを用いた白色Ｅ
Ｌ素子について述べたが、ＣａＳ：Ｅｕ。The above is a white E using SrS:Pr, Ce as a light emitting layer.
Although I mentioned the L element, CaS:Eu.
ＳｒＳ：Ｃｅ、あるいは、Ｂ ａ Ｓ ： Ｃｅを発光
層に用いたＥＬ素子でも同様の検討を進め９問題のない
ことを確認した。Similar studies were conducted on EL devices using SrS:Ce or B a S:Ce in the light emitting layer, and it was confirmed that there were no problems.
本発明で製造できる薄膜ＥＬ素子は、カラーフィルタと
の組み合わせにより、マルチカラーＥＬデイスプレィに
適用できる。また、このＥＬデイスプレィは電子機器の
表示部に用いることができる。The thin film EL device that can be manufactured according to the present invention can be applied to multicolor EL displays by combining it with color filters. Further, this EL display can be used as a display section of electronic equipment.
本発明によれば、水溶液を使用しないフォトリソ工程で
、発光層を溶解することなく三本／ｍｍ以上の電極を容
易に形成できるので、高精細カラーＥ Ｌ Ｄを実現で
きる。According to the present invention, it is possible to easily form three or more electrodes/mm without dissolving the light-emitting layer in a photolithography process that does not use an aqueous solution, so that a high-definition color ELD can be realized.
第１図は本発明の一実施例の上部電極形成のためのフォ
トリソ工程の断面図、第２図は従来の薄膜Ｅ Ｌ素子の
断面図、第３図は本発明で得られた薄膜Ｅ Ｌ素子の部
分拡大平面図、第４図は本発明で得られた薄膜素子の輝
度−電圧特性図である。
１・・・ガラス基板、２・・下部透明電極、３ａ・・・
下部絶縁層、３ｂ・・・上部絶縁層、４・・・発光層、
５・・・上部電極、６・・・フォトレジストパターン。
第１図
（・FIG. 1 is a sectional view of a photolithography process for forming an upper electrode according to an embodiment of the present invention, FIG. 2 is a sectional view of a conventional thin film EL element, and FIG. 3 is a sectional view of a thin film EL element obtained by the present invention. FIG. 4, which is a partially enlarged plan view of the device, is a luminance-voltage characteristic diagram of the thin film device obtained by the present invention. 1...Glass substrate, 2...Lower transparent electrode, 3a...
Lower insulating layer, 3b... Upper insulating layer, 4... Light emitting layer,
5... Upper electrode, 6... Photoresist pattern. Figure 1 (・
Claims (4)
層及び上部電極を順次積層した薄膜ＥＬ素子において、
前記上部電極を形成するときに、水溶液を使用しないフ
オトリソ工程を採用することを特徴とする薄膜ＥＬ素子
の製造方法。1. In a thin film EL device in which a lower electrode, a first insulating layer, a light emitting layer, a second insulating layer and an upper electrode are sequentially laminated on a substrate,
A method for manufacturing a thin film EL device, characterized in that a photolithography process that does not use an aqueous solution is adopted when forming the upper electrode.
成するためのフオトリソ工程では、フオトレジストとし
ては現像、リンス及びはく離工程を有機溶剤のみででき
るネガ型レジストを、また、エツチングは、イオンミリ
ングやスパツタエツチングなどのドライエツチング法を
採用することを特徴とする薄膜ＥＬ素子の製造方法。2. In claim 1, in the photolithography process for forming the upper electrode, the photoresist is a negative resist that can be developed, rinsed and peeled off using only an organic solvent, and the etching process is performed using ion milling or ion milling. A method for manufacturing a thin film EL element, characterized by employing a dry etching method such as sputter etching.
材料として、ＳｒＳ，ＣａＳまたはＢａＳを用いたこと
を特徴とする薄膜ＥＬ素子の製造方法。3. 2. The method of manufacturing a thin film EL device according to claim 1, wherein SrS, CaS, or BaS is used as a base material of the light emitting layer.
上部電極を形成するときに電極と逆パターンの前記ネガ
型レジストを形成しておき、電極材料の蒸着後レジスト
とともにレジスト上の蒸着膜を除去するリフトオフ法を
採用した薄膜ＥＬ素子の製造方法．4. In claim 1 or 3, when forming the upper electrode, the negative resist is formed in a pattern opposite to that of the electrode, and after vapor deposition of the electrode material, the vapor deposited film on the resist is removed together with the resist. A method for manufacturing thin film EL devices using the lift-off method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63181853A JPH0233890A (en) | 1988-07-22 | 1988-07-22 | Manufacture of thin film electroluminescence element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63181853A JPH0233890A (en) | 1988-07-22 | 1988-07-22 | Manufacture of thin film electroluminescence element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0233890A true JPH0233890A (en) | 1990-02-05 |
Family
ID=16107973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63181853A Pending JPH0233890A (en) | 1988-07-22 | 1988-07-22 | Manufacture of thin film electroluminescence element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0233890A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5432015A (en) * | 1992-05-08 | 1995-07-11 | Westaim Technologies, Inc. | Electroluminescent laminate with thick film dielectric |
-
1988
- 1988-07-22 JP JP63181853A patent/JPH0233890A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5432015A (en) * | 1992-05-08 | 1995-07-11 | Westaim Technologies, Inc. | Electroluminescent laminate with thick film dielectric |
| US5634835A (en) * | 1992-05-08 | 1997-06-03 | Westaim Technologies Inc. | Electroluminescent display panel |
| US5702565A (en) * | 1992-05-08 | 1997-12-30 | Westaim Technologies, Inc. | Process for laser scribing a pattern in a planar laminate |
| US5756147A (en) * | 1992-05-08 | 1998-05-26 | Westaim Technologies, Inc. | Method of forming a dielectric layer in an electroluminescent laminate |
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