JPH0233151A - Method for removing scattered photoresist - Google Patents
Method for removing scattered photoresistInfo
- Publication number
- JPH0233151A JPH0233151A JP18401388A JP18401388A JPH0233151A JP H0233151 A JPH0233151 A JP H0233151A JP 18401388 A JP18401388 A JP 18401388A JP 18401388 A JP18401388 A JP 18401388A JP H0233151 A JPH0233151 A JP H0233151A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- film
- scattered
- particles
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title claims description 13
- 238000000576 coating method Methods 0.000 claims abstract description 17
- 239000011248 coating agent Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 4
- 239000002245 particle Substances 0.000 claims description 24
- 239000003463 adsorbent Substances 0.000 claims description 3
- 101100327917 Caenorhabditis elegans chup-1 gene Proteins 0.000 abstract description 11
- 229920006254 polymer film Polymers 0.000 abstract description 11
- 229920002635 polyurethane Polymers 0.000 abstract 1
- 239000004814 polyurethane Substances 0.000 abstract 1
- 239000012487 rinsing solution Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 12
- 238000007796 conventional method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明はフォトレジスト塗布時に容器内面に飛散する
フォトレジスト飛散物を除去する方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for removing photoresist particles scattered on the inner surface of a container during photoresist coating.
（従来の技術）
ウェハ上に７オトレジストを塗布する方法として、スピ
ンコード法がある。この方法はスピンコータを用いて、
ウェハ上にフォトレジストを滴下しウェハを回転させる
ことにより、ウェハ上に均一なフォトレジスト膜を形成
する方法である。この方法はウェハを回転させて、フォ
トレジストを塗布するため、フォトレジストを塗布する
際、スピンカップ内面に多量のフォトレジスト溶液が飛
敗し、飛びはねることで７オトレジストの膜厚形成精度
を悪くする。(Prior Art) There is a spin code method as a method of coating a 7-photoresist on a wafer. This method uses a spin coater,
This method forms a uniform photoresist film on the wafer by dropping photoresist onto the wafer and rotating the wafer. This method rotates the wafer and coats the photoresist, so when coating the photoresist, a large amount of photoresist solution splashes onto the inner surface of the spin cup, impairing the accuracy of forming the photoresist film thickness. do.
このため、フォトレジスト塗布時に、スピンカップ内面
に飛散するフォトレジスト飛散物を常時除去しスピンカ
ップ内面を洗浄する必要がある。Therefore, when photoresist is applied, it is necessary to constantly remove photoresist particles scattered on the inner surface of the spin cup and clean the inner surface of the spin cup.
第２図は従来のフォトレジスト飛散物の除去方法を示す
スピンコータ断面図である。同図に示すように、スピン
カップ１内面にフォトレジスト飛散物の溶解が可能な有
機溶剤であるリンス液２を流し、ウェハチャック３を回
転させることでウェハ４より飛び敗るフォトレジスト飛
散物５をリンス液２に溶かしている。そして、リンス液
排出口６よりフォトレジスト飛散物５を溶かしたリンス
液２を流し出すことで７オトレジスト飛散物５の除去を
行っている。また、このリンス液２はミスト状の７オト
レジスト飛散物５のスピンカップ１内面に衝突する際の
衝撃を柔げ、フォトレジスト飛散物５がスピンカップ１
内面からはねかえりウェハ４に衝突することでウェハ４
を傷つけることを防止する働きも兼ねている。なお、８
は排気口である。FIG. 2 is a sectional view of a spin coater showing a conventional method for removing photoresist particles. As shown in the figure, by pouring a rinsing liquid 2, which is an organic solvent capable of dissolving photoresist particles, onto the inner surface of the spin cup 1 and rotating the wafer chuck 3, photoresist particles 5 fly away from the wafer 4. is dissolved in rinse solution 2. Then, the rinsing liquid 2 in which the photoresist particles 5 have been dissolved is poured out from the rinse liquid outlet 6, thereby removing the photoresist particles 5. In addition, this rinsing liquid 2 softens the impact of the mist-like scattered photoresist particles 5 when they collide with the inner surface of the spin cup 1, so that the photoresist particles 5 are removed from the spin cup 1.
The wafer 4 bounces off from the inner surface and collides with the wafer 4.
It also serves to prevent damage to the body. In addition, 8
is an exhaust port.
従来のフォトレジスト飛散物の除去方法は以上のように
行われており、フォトレジスト塗布中に常時スピンカッ
プ内面にリンス液を流す必要があるため、多量のリンス
液を必要とする問題点があった。The conventional method for removing photoresist scatterings is performed as described above, but it has the problem of requiring a large amount of rinsing liquid because it is necessary to constantly flow the rinsing liquid onto the inner surface of the spin cup during photoresist application. Ta.
また、リンス液の蒸気圧がウェハ上に形成されるフォト
レジストの膜厚およびその園内均一性等に彰１を与える
ため、リンス液の流ｍ、流すタイミング、排気口８から
の排気量等の微妙な調節を必要とし操作が複雑であると
いう問題点があった。In addition, since the vapor pressure of the rinsing liquid affects the film thickness of the photoresist formed on the wafer and its uniformity within the field, the flow rate of the rinsing liquid, the timing of the flow, the amount of exhaust from the exhaust port 8, etc. There is a problem in that it requires delicate adjustments and is complicated to operate.
この発明は上記のような問題点を解決するためになされ
たもので、フォトレジスト形成精度を下げることなく操
作が簡単なフォトレジスト飛散物の除去方法を得ること
を目的とする。This invention was made to solve the above-mentioned problems, and it is an object of the present invention to provide a method for removing photoresist scattering particles that is easy to operate without reducing the accuracy of photoresist formation.
この発明にかかるフォトレジスト飛散物の除去方法は、
容器内でウェハ上にフォトレジストを塗布するフォトレ
ジスト塗布工程前に、前記容器内面に、前記フォトレジ
スト飛散物に対し不溶で吸着性があり、かつ前記容器内
面から剥離容易な材質による層を形成する工程と、前記
フォトレジスト塗布工程後に、前記フォトレジスト塗布
工程中に飛び敗ったフォトレジスト飛散物が付着した前
記層を前記収納カップから剥離することで前記フォトレ
ジスト飛散物を除去する工程とを含んでいる。The method for removing photoresist scatterings according to the present invention includes:
Before a photoresist coating step of applying photoresist onto a wafer in a container, a layer is formed on the inner surface of the container using a material that is insoluble and adsorbent to the scattered photoresist and is easily peeled from the inner surface of the container. and after the photoresist coating step, removing the photoresist particles by peeling off the layer to which the photoresist particles that flew during the photoresist coating step are attached from the storage cup. Contains.
この発明においては、層を剥離することでフォトレジス
ト飛散物を除去するため、簡単にフォトレジスト飛散物
を除去でき、フォトレジスト塗布工程には何ら影響を与
えない。In this invention, since the photoresist scattering is removed by peeling off the layer, the photoresist scattering can be easily removed and does not affect the photoresist coating process in any way.
第１図はこの発明の一実施例であるフォトレジスト飛散
物の除去方法を示すスピンコータの断面図である。同図
に示すようにフォトレジスト塗布工程前に、フォトレジ
スト溶液に不溶な有機高分子であるウレタン樹脂をアル
コールに溶かして塗布し乾燥させることでスピンカップ
１の全内面に高分子１９を形成している。なお、３〜５
は従来と同じであるため説明は省略する。FIG. 1 is a sectional view of a spin coater illustrating a method for removing photoresist particles according to an embodiment of the present invention. As shown in the figure, before the photoresist coating process, a urethane resin, which is an organic polymer insoluble in the photoresist solution, is dissolved in alcohol and applied and dried to form a polymer 19 on the entire inner surface of the spin cup 1. ing. In addition, 3 to 5
Since it is the same as before, the explanation will be omitted.
高分子膜９をスピンカップ１内面に形成したため、フォ
トレジスト塗布工程中に飛散するフォトレジスト飛散物
５は、同図に示すように全て高分子膜９上に付着する。Since the polymer film 9 is formed on the inner surface of the spin cup 1, all of the photoresist particles 5 scattered during the photoresist coating process adhere to the polymer film 9, as shown in the figure.
この高分子膜９はフォトレジスト飛散物５に対する吸着
力があるため、フォトレジスト飛散物５が高分子１１９
からはねかえりウェハ４に衝撃を与えることでウェハ４
に傷を与えることはなく、再びフォトレジスト飛散物５
が飛び散ることもない。Since this polymer film 9 has an adsorption force for the photoresist scattering 5, the photoresist scattering 5 is absorbed by the polymer 119.
By applying an impact to the wafer 4 rebounding from the wafer 4, the wafer 4 is
There is no damage to the photoresist splatter 5.
There is no scattering.
そして、ある程度フォトレジスト飛散物５が高分子膜９
上に付着すれば、高分子膜９を剥離することで、高分子
１１９上に付着したフォトレジスト飛散物５も同時に除
去することができ、容易にスピンカップ１の洗浄が行え
る。Then, to some extent, the photoresist scatterings 5 are removed from the polymer film 9.
If the photoresist particles 5 adhere to the polymer film 119, the photoresist particles 5 adhering to the polymer film 119 can be removed at the same time by peeling off the polymer film 9, and the spin cup 1 can be easily cleaned.
このように、高分子１１９の剥離によってフォトレジス
ト飛散物５の除去が行えるため、フォトレジスト塗布中
にリンス液によりフォトレジスト飛散物５の除去を行う
従来法と異なりフォトレジスト形成精度には何ら悪影響
を与えない。すなわち、従来のように、フォトレジスト
塗布時におけるリンス液流量の調整等の複雑な操作を行
わなくとも、フォトレジストの膜厚及びその均一性を精
度よく保つことができ、しかもその操作は容易である。In this way, since the photoresist scattered particles 5 can be removed by peeling off the polymer 119, unlike the conventional method in which the photoresist particles 5 are removed using a rinsing liquid during photoresist application, there is no negative effect on the photoresist formation accuracy. not give. In other words, the film thickness and uniformity of the photoresist can be maintained with high accuracy without having to perform complicated operations such as adjusting the flow rate of the rinsing liquid during photoresist application as in the past, and the operation is easy. be.
またリンス液を流す必要がなくなったため、従来のよう
にスピンカップ１にリンス液排出口と排気口を設ける必
要なくなり、スピンカップ１の構造も簡略化できる。Further, since there is no need to flow the rinsing liquid, it is no longer necessary to provide the rinsing liquid discharge port and the exhaust port in the spin cup 1 as in the conventional case, and the structure of the spin cup 1 can also be simplified.
また、この実施例では、スピンコード法によるフォトレ
ジスト塗布方法を例に挙げたが、他の７オトレジスト塗
布方法であっても、フォトレジスト塗布時にフォトレジ
スト飛散物が発生してしまう方法であればこの発明を適
用することができる。In addition, in this example, a photoresist coating method using a spin code method was taken as an example, but even if there are 7 other photoresist coating methods that generate photoresist scattering during photoresist coating, This invention can be applied.
また、この実施例では、スピンカップ１内面に高分子膜
９を形成した例を挙げたが、フォトレジスト飛散物５に
対し不溶で吸着性があり、かつスピンカップ１内面から
剥離容易な材質であれば代用可能である。In addition, in this embodiment, an example was given in which the polymer film 9 was formed on the inner surface of the spin cup 1, but it is made of a material that is insoluble and adsorbent to the photoresist scattered particles 5 and is easily peeled off from the inner surface of the spin cup 1. If available, it can be substituted.
以上説明したように、この発明によれば、層を剥離する
ことでフォトレジスト飛散物を除去するため、フォトレ
ジスト形成精度を下げることなくフォトレジスト飛散物
の除去操作が簡単に行える効果がある。As described above, according to the present invention, since the photoresist scattering is removed by peeling off the layer, it is possible to easily remove the photoresist scattering without lowering the photoresist formation accuracy.
第１図はこの発明の一実施例であるフォトレジスト飛散
物の除去方法を示す断面図、第２図は従来のフォトレジ
スト飛散物の除去方法を示す断面図である。
図において、１はスピンカップ、４はウェハ、５はフォ
トレジスト飛散物、９は高分子膜である。
なお、各図中同一符号は同一または相当部分を示す。FIG. 1 is a sectional view showing a method for removing photoresist scattered particles according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional method for removing photoresist particles. In the figure, 1 is a spin cup, 4 is a wafer, 5 is a photoresist scatter, and 9 is a polymer film. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
ォトレジスト塗布工程前に、前記容器内面に、前記フォ
トレジスト飛散物に対し不溶で吸着性があり、かつ前記
容器内面から剥離容易な材質による層を形成する工程と
、 前記フォトレジスト塗布工程後に、前記フォトレジスト
塗布工程中に飛び散ったフォトレジスト飛散物が付着し
た前記層を前記容器から剥離することで前記フォトレジ
スト飛散物を除去する工程とを含んだフォトレジスト飛
散物の除去方法。(1) Before the photoresist coating step of applying photoresist onto a wafer in a container, the inner surface of the container is made of a material that is insoluble and adsorbent to the photoresist scatterings and is easily peeled from the inner surface of the container. forming a layer; and after the photoresist coating step, removing the photoresist particles by peeling the layer to which the photoresist particles scattered during the photoresist coating step are attached from the container. A method for removing photoresist particles containing
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18401388A JPH0744142B2 (en) | 1988-07-22 | 1988-07-22 | Method for removing scattered photoresist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18401388A JPH0744142B2 (en) | 1988-07-22 | 1988-07-22 | Method for removing scattered photoresist |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0233151A true JPH0233151A (en) | 1990-02-02 |
| JPH0744142B2 JPH0744142B2 (en) | 1995-05-15 |
Family
ID=16145807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18401388A Expired - Fee Related JPH0744142B2 (en) | 1988-07-22 | 1988-07-22 | Method for removing scattered photoresist |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0744142B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014157911A (en) * | 2013-02-15 | 2014-08-28 | Ricoh Co Ltd | Rotary coating apparatus and cleaning method of the same |
-
1988
- 1988-07-22 JP JP18401388A patent/JPH0744142B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014157911A (en) * | 2013-02-15 | 2014-08-28 | Ricoh Co Ltd | Rotary coating apparatus and cleaning method of the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0744142B2 (en) | 1995-05-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
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