JPH0231125U - - Google Patents

Info

Publication number
JPH0231125U
JPH0231125U JP10875688U JP10875688U JPH0231125U JP H0231125 U JPH0231125 U JP H0231125U JP 10875688 U JP10875688 U JP 10875688U JP 10875688 U JP10875688 U JP 10875688U JP H0231125 U JPH0231125 U JP H0231125U
Authority
JP
Japan
Prior art keywords
doping
ion
ion generation
semiconductor wafer
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10875688U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10875688U priority Critical patent/JPH0231125U/ja
Publication of JPH0231125U publication Critical patent/JPH0231125U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP10875688U 1988-08-19 1988-08-19 Pending JPH0231125U (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10875688U JPH0231125U (fr) 1988-08-19 1988-08-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10875688U JPH0231125U (fr) 1988-08-19 1988-08-19

Publications (1)

Publication Number Publication Date
JPH0231125U true JPH0231125U (fr) 1990-02-27

Family

ID=31344390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10875688U Pending JPH0231125U (fr) 1988-08-19 1988-08-19

Country Status (1)

Country Link
JP (1) JPH0231125U (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140101656A (ko) * 2013-02-11 2014-08-20 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 처리 장치, 이온 주입 장치 및 이온 주입 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140101656A (ko) * 2013-02-11 2014-08-20 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 처리 장치, 이온 주입 장치 및 이온 주입 방법

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