JPH02308555A - Structure and method for sealing electronic component - Google Patents
Structure and method for sealing electronic componentInfo
- Publication number
- JPH02308555A JPH02308555A JP12888389A JP12888389A JPH02308555A JP H02308555 A JPH02308555 A JP H02308555A JP 12888389 A JP12888389 A JP 12888389A JP 12888389 A JP12888389 A JP 12888389A JP H02308555 A JPH02308555 A JP H02308555A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- sealing resin
- sealing
- resin
- frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007789 sealing Methods 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 15
- 229920005989 resin Polymers 0.000 claims abstract description 55
- 239000011347 resin Substances 0.000 claims abstract description 55
- 238000007747 plating Methods 0.000 claims abstract description 25
- 238000009713 electroplating Methods 0.000 claims abstract description 16
- 238000007788 roughening Methods 0.000 claims description 7
- 230000000694 effects Effects 0.000 abstract description 7
- 238000001746 injection moulding Methods 0.000 abstract description 3
- 238000005452 bending Methods 0.000 description 6
- 238000004873 anchoring Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 239000004734 Polyphenylene sulfide Substances 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 229920000069 polyphenylene sulfide Polymers 0.000 description 3
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000009760 electrical discharge machining Methods 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
この発明は、チップをリードフレームと共に封止する電
子部品の封止構造およびその封止方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a sealing structure for an electronic component that seals a chip together with a lead frame, and a method for sealing the same.
（従来の技術）
半導体装置では、第１５図および第１６図に示されるよ
うにボンディングされたＩＣチップ１とリードフレーム
２との周りに封止樹脂３を設けて、封止することが行な
われている。(Prior Art) In a semiconductor device, sealing is performed by providing a sealing resin 3 around a bonded IC chip 1 and lead frame 2, as shown in FIGS. 15 and 16. ing.
ところで、封止する以上、リードフレーム２と樹脂層と
の間には隙間が生じることがあってはならない。By the way, as long as the sealing is performed, there must be no gap between the lead frame 2 and the resin layer.
ところが、金属のリードフレーム２と封止樹脂３とは熱
膨張係数が異なる。このため、リードフレーム２の半田
付けの際に生じるリードフレーム２の熱的変位により、
隙間が発生することがある。。However, the metal lead frame 2 and the sealing resin 3 have different coefficients of thermal expansion. Therefore, due to the thermal displacement of the lead frame 2 that occurs when the lead frame 2 is soldered,
Gaps may occur. .
具体的には、゛リードフレーム２が半田付けの熱で膨張
し、その後、冷えて再び戻ると、密着していたリードフ
レーム２の外表面と封止樹脂３との間に隙間が発生して
しまう。Specifically, when the lead frame 2 expands due to the heat of soldering and then cools down again, a gap is created between the outer surface of the lead frame 2 and the sealing resin 3, which were in close contact with each other. Put it away.
そこで、近時では、封止樹脂３にシランカップリング剤
を添加して化学的に強度を高めたり、封止樹脂自体を低
応力化して、リードフレーム２と封止樹脂３との密着を
高めることが行なわれている。Therefore, recently, a silane coupling agent is added to the sealing resin 3 to chemically increase the strength, or the sealing resin itself is made to have less stress, thereby increasing the adhesion between the lead frame 2 and the sealing resin 3. things are being done.
（発明が解決しようとする課題）
ところが、前者のシランカップリング剤を用いる技術に
よると、封止樹脂３を射出成形するときのシリンダ一温
度が「３５０℃程度」まで上昇するのに、沸点が「２９
０℃／ＴｏｒｒＪと低く、効果の点で疑問である。(Problem to be Solved by the Invention) However, according to the former technique using a silane coupling agent, although the temperature of the cylinder when injection molding the sealing resin 3 rises to about 350 degrees Celsius, the boiling point remains low. "29
It is as low as 0°C/TorrJ, and its effectiveness is questionable.
また後者の封止樹脂自体を低応力化にする技術は、曲げ
弾性１曲げ強度、クリープ特性が下がってしまう問題が
あり、耐久性の点でよくないものであった。Furthermore, the latter technique of reducing stress in the sealing resin itself has a problem in that bending elasticity, bending strength, and creep properties are reduced, which is not good in terms of durability.
この発明はこのような事情に着目してなされたもので、
その目的とするところは、樹脂の耐久性を損わずに、リ
ードフレームと封止樹脂との密着性を大幅に向上させる
ことができる電子部品の封止構造およびその封止方法を
提供することにある。This invention was made with attention to these circumstances,
The purpose is to provide an electronic component sealing structure and a sealing method that can significantly improve the adhesion between a lead frame and a sealing resin without impairing the durability of the resin. It is in.
［発明の構成］
（課題を解決するための手段）
上記目的を達成するために請求項１に記載の発明は、外
表面に粗面が形成されたリードフレームと、前記リード
フレームの外表面に電気メッキ処理によって同性された
メッキ層と、このメッキ層を被覆する封止樹脂層とから
、封止構造を構成する。[Structure of the Invention] (Means for Solving the Problems) In order to achieve the above object, the invention according to claim 1 provides a lead frame having a rough surface formed on the outer surface thereof, and a lead frame having a rough surface formed on the outer surface of the lead frame. A sealing structure is composed of a plating layer that has been made the same by electroplating and a sealing resin layer that covers this plating layer.
同じく請求項２に記載の発明は、粗面加工、電気メッキ
処理を用いて、リードフレームの外表面に粗面加工をし
た後、電気メッキ処理でリードフレームの外表面にメッ
キを施し、その後、封止樹脂層を被覆する封止方法を構
成する。Similarly, the invention according to claim 2 includes roughening the outer surface of the lead frame using surface roughening and electroplating, and then plating the outer surface of the lead frame with electroplating. A sealing method for coating a sealing resin layer is configured.
（作用）
請求項１に記載の電子部品の封止構造によると、粗面に
対する電気メッキ処理によって形成された、膨出部が張
り出る空間内に、封止樹脂が入り込んでリードフレーム
と密着する。これにより、空間内に充填された樹脂部分
自身がメッキ層の膨出部と協同して、封止樹脂が離れる
方向の動きを規制する投錨効果的な係止構造を形成し、
密着性および接着効果の向上を図っていく。(Function) According to the electronic component sealing structure according to claim 1, the sealing resin enters into the space in which the bulge protrudes, which is formed by electroplating on the rough surface, and comes into close contact with the lead frame. . As a result, the resin part itself filled in the space cooperates with the bulging part of the plating layer to form an anchoring effective locking structure that restricts the movement of the sealing resin in the direction of separation.
We will strive to improve adhesion and adhesive effects.
同じく請求項２に記載の電子部品の封止方法によると、
リードフレームの粗面にメッキが施されることにより、
外表面の鋭角的な頂部分に膨出部が形成され、外表面上
に膨出部が張り出た空間を多数形成していく。そして、
この空間内に封止樹脂が充填されていき、請求項１と同
様、空間内に充填された樹脂部分自身がメッキ層の膨出
部と協同して、封止樹脂が離れる方向の動きを規制し、
密着性および接着効果の向上を図っていく。According to the method for sealing an electronic component according to claim 2,
By plating the rough surface of the lead frame,
A bulge is formed at the acute apex portion of the outer surface, and a large number of spaces are formed on the outer surface from which the bulge extends. and,
The sealing resin is filled in this space, and as in claim 1, the resin portion itself filled in the space cooperates with the bulge of the plating layer to restrict the movement of the sealing resin in the direction of separation. death,
We will strive to improve adhesion and adhesive effects.
（実施例）
以下、この発明を第１図ないし第１３図に示す第１の実
施例に実施例にもとづいて説明する。(Example) Hereinafter, the present invention will be explained based on a first example shown in FIGS. 1 to 13.
但し、図面において、先の「従来の技術」の項で述べた
ものと同じ構成部品には同一符号を附してその説明を省
略し、この項では異なる部位について説明することにす
る。However, in the drawings, the same components as those described in the "Prior Art" section are given the same reference numerals and their explanations are omitted, and different parts will be explained in this section.
本実施例は、メッキ技術を用いてリードフレーム２と封
止樹脂３とを密着させた封止構造とその封止方法の点で
異なっている。This embodiment differs in the sealing structure in which the lead frame 2 and the sealing resin 3 are brought into close contact with each other using plating technology, and in the sealing method.
すなわち、まず、本実施例の半導体装置の封止構造につ
いて説明すれば、例えば第２図に拡大して示すＣｕ、Ｆ
ｅなどで構成され名リードフレーム２の表側と裏側の而
２ａ、２ｂには、例えば放電加工によって第１図に示す
ように角形状の凹凸部４が複数条、形成されている。そ
して、この凹凸部４でリードフレーム２の外表面を粗し
、粗面としている。That is, first, the sealing structure of the semiconductor device of this example will be explained.
As shown in FIG. 1, a plurality of rectangular uneven portions 4 are formed on the front and back sides 2a and 2b of the lead frame 2, for example, by electrical discharge machining, as shown in FIG. The outer surface of the lead frame 2 is roughened by the uneven portions 4 to form a rough surface.
またこのリードツーレム２は、粗面を含む外表面全体に
は電気メッキ処理、例えばＮｉメッキ処理が施され、第
１図および第３図に示されるようにリードフレーム２の
外表面にメッキ層５を固むさせている。そして、このメ
ッキが施されたリードフレーム２およびＩＣチップ１の
周りに、射出成形によって、例えばＰＰＳ （ポリフェ
ニレンサルファイド）で構成される封止樹脂３（封止樹
脂層に相当）が成形され、ＩＣチップ１の周囲を封止し
ている。Further, the entire outer surface of the lead frame 2 including the rough surface is subjected to electroplating, for example, Ni plating, and as shown in FIGS. 1 and 3, a plating layer 5 is applied to the outer surface of the lead frame 2. It hardens. Then, around the plated lead frame 2 and IC chip 1, a sealing resin 3 (corresponding to a sealing resin layer) made of, for example, PPS (polyphenylene sulfide) is molded by injection molding, and the IC The periphery of the chip 1 is sealed.
つぎに、この封止構造にもとづき封ＩＦ方法について説
明すれば、この封止方法は第４図に示される３つの工程
から行なわれている。。Next, the sealing IF method will be explained based on this sealing structure. This sealing method is performed through three steps shown in FIG. 4. .
すなわち、これには、まず、リードフレーム２の表側と
裏側の而２ａ、２ｂに、表面粗加工を施す。これは、例
えば放電加工を表側および裏面側の各面２ａ、２ｂに施
して、第１図に示すように角溝形状の凹凸部４を複数条
、形成していくことによりなされる。そして、この複数
条の凹凸部４にて、角（エツジ）の有る微小な粗面を形
成する。That is, first, surface roughening is performed on the front and back sides 2a and 2b of the lead frame 2. This is done, for example, by performing electrical discharge machining on each of the front and back surfaces 2a and 2b to form a plurality of rectangular groove-shaped uneven portions 4 as shown in FIG. Then, the plurality of uneven portions 4 form a minute rough surface with corners (edges).
表面粗加工を終えたならば、つぎにメッキ加工、例えば
電気メッキ処理でｒＮｉＪをリードフレーム２の外表面
にメッキする。すると、第１図および第３図に示される
ようにリードフレーム２の粗面の鋭角的な頂部分および
角部にこぶ状部分５ａ（膨出部に相当）が生じながら、
リードフレーム全体に「Ｎｉメッキ」のメッキ層５が施
されていく 。After the surface roughening is completed, rNiJ is plated on the outer surface of the lead frame 2 by plating, for example, electroplating. As a result, as shown in FIGS. 1 and 3, bump-like portions 5a (corresponding to bulges) are formed at the sharp tops and corners of the rough surface of the lead frame 2.
A plating layer 5 of "Ni plating" is applied to the entire lead frame.
ここで、こぶ状部分５ａの発生について説明すレバ、リ
ードフレーム２側をマイナスとして行なわれる電気メッ
キは、コーナ一部の曲率が「０」の部分に電流線が集中
しやすい性質を有している。Here, we will explain the generation of the bump-shaped portion 5a. Electroplating is performed with the lever and lead frame 2 side set as a negative side, and the current wire tends to concentrate on the part of the corner where the curvature is "0". There is.
このため、電流線が集中する部分では［ＮｉＪが集中し
てこぶ状になっていく。実験によれば、第５図ないし第
７図に示されるような外側のコーナ部１０をもつもので
は、第５図のようにコーナ部１０の曲率が「０」になる
にしたがってメッキ層５がこぶ状になりやすく、第７図
のようにコーナ部１０に十分な曲率を与えるにしたがっ
てメッキ層５は比較的均一となる。これは第８図ないし
第１０図に示されるような内側のコーナ部１１でも同様
である。また第１１図ないし第１３図に示されるように
而１２の曲率から見れば、平面な面１２より、凸となっ
た面１２の方がメッキ層５が均一となりやすく、逆に面
１２が凹面になるにしたがってコーナ部１０にこぶ状の
メッキ層５が生じやすいことがわかっている。Therefore, in the area where the current lines are concentrated, [NiJ is concentrated and forms a bump-like shape. According to experiments, in those having outer corner portions 10 as shown in FIGS. 5 to 7, as the curvature of the corner portion 10 becomes "0" as shown in FIG. The plating layer 5 tends to be knobby, and as the corner portion 10 is given a sufficient curvature as shown in FIG. 7, the plating layer 5 becomes relatively uniform. This also applies to the inner corner portions 11 as shown in FIGS. 8 to 10. Moreover, as shown in FIGS. 11 to 13, when viewed from the curvature of the surface 12, the plating layer 5 is more likely to be uniform on the convex surface 12 than on the flat surface 12, and conversely, when the surface 12 is concave It has been found that as the thickness increases, bump-shaped plating layers 5 are more likely to form on the corner portions 10.
これにより、凹凸部５に「Ｎｉメッキ」を施すと、鋭角
的な頂部分にこぶ状部分５が形成されたメッキとなる。As a result, when "Ni plating" is applied to the uneven portion 5, the plating results in a knob-like portion 5 formed at the acute-angled apex portion.
そして、このメッキによって、第１図に示されるように
こぶ状部分５ｇ、５ａが内部に張り出す凹形の空間８ａ
が、リードフレーム２の表面に多数形成されていく。む
ろん、リードフレーム２の脚部２ｃ、２ｃ間にも、こぶ
状部分５ａ、５ａが内部に張り出す凹形の空間８ｂが形
成されていく。As a result of this plating, a concave space 8a is formed in which the knob-shaped portions 5g and 5a protrude inside, as shown in FIG.
are formed in large numbers on the surface of the lead frame 2. Of course, a concave space 8b is formed between the leg portions 2c, 2c of the lead frame 2 as well, from which the knob-shaped portions 5a, 5a protrude inside.
そして、その後、例えば熱可塑性樹脂の封止樹脂３ （
ＰＰＳ）をＩＣチップ１およびリードフレーム２に射出
成形する。これにより、第１図および第３図に示される
ように封止樹脂３が、各空間８ａ、８ｂに封止樹脂３が
入り込みながらＩＣチップ１およびリードフレーム２の
周りを被覆していく。ついで、封止樹脂３が硬化してい
く。Then, after that, for example, a sealing resin 3 of thermoplastic resin (
PPS) is injection molded onto the IC chip 1 and lead frame 2. As a result, as shown in FIGS. 1 and 3, the sealing resin 3 covers the IC chip 1 and the lead frame 2 while entering the spaces 8a and 8b. Then, the sealing resin 3 is cured.
すると、封止樹脂３とメッキ層５との間に投錨る形状と
なるから、こぶ状部分５ａが張り出る空間８ａと樹脂部
分り自身とで、係止構造を形成していく。もろん、これ
は空間８ｂと該空間８ｂに充填された樹脂部分９につい
ても同様である。しかるに、空間８ａと樹脂部分９との
係止構造、ならびに空間８ｂと樹脂部分９との係止構造
によって、封止樹脂３がリードフレーム２側から離れる
のを規制していくことになる。Then, since the shape is anchored between the sealing resin 3 and the plating layer 5, a locking structure is formed by the space 8a in which the knob-shaped portion 5a protrudes and the resin portion itself. Of course, this also applies to the space 8b and the resin portion 9 filled in the space 8b. However, the locking structure between the space 8a and the resin portion 9 and the locking structure between the space 8b and the resin portion 9 prevent the sealing resin 3 from separating from the lead frame 2 side.
したがって、たとえ封止樹脂３あるいはリードフレーム
２に両者を離すような力が働いたとしても、離反せずに
密着状態を維持することができる。Therefore, even if a force acts on the sealing resin 3 or the lead frame 2 to separate them, the close contact state can be maintained without separation.
つまり、リードフレーム２と封止樹脂３との間に隙間が
生じるのを防ぐことができる。In other words, it is possible to prevent a gap from forming between the lead frame 2 and the sealing resin 3.
それ故、粗面処理、電気メッキ処理を用いて、封止する
構造および封止する方法によると、封止樹脂３の密着性
および接着性の効果を図ることができる。しかも、機械
的に投錨効果を生じさせるので、従来のように封止樹脂
自体の曲げ弾性１曲げ強度、クリープ特性を低下せずに
すみ、耐久性にも優れる。Therefore, according to the sealing structure and sealing method using surface roughening treatment and electroplating treatment, it is possible to improve the adhesiveness and adhesion of the sealing resin 3. Furthermore, since the anchoring effect is mechanically produced, there is no need to reduce the bending elasticity, bending strength, and creep characteristics of the sealing resin itself, which is the case with conventional methods, and the sealing resin has excellent durability.
そのうえ、上述のような投錨効果は、空気中の水分を取
り込むと逃しにくい利点をもち、表面のぬれ性を向上さ
せることができる。と同時に、水素結合や化学結合（例
えば封止樹脂にカップリング剤添加）などの親和力を補
強できる利点もある。Moreover, the anchoring effect as described above has the advantage that once moisture in the air is taken in, it is difficult to escape, and the wettability of the surface can be improved. At the same time, it also has the advantage of reinforcing affinities such as hydrogen bonds and chemical bonds (for example, by adding a coupling agent to the sealing resin).
第１４図は、この発明の第２の実施例を示す。FIG. 14 shows a second embodiment of the invention.
第一図はリードフレーム２の表側、裏側に表面粗加工、
例えば放電加工によって先端がとんがった凸部４ａと略
半楕円状の凹部４ｂとを交互に形成してなる複数条の凹
凸部４を形成する。そして、この溝状の凹凸部４に電気
メッキ処理を施し、これに封止樹脂３を被覆したもので
ある。つまり、第２の実施例は、リードフレーム２側の
こぶ状部分５ａが張り出たくさび状の断面の空間１３と
、該空間１３に充填される同空間１３を補完するような
樹脂部分１４との両者で、封止樹脂３がり−４の大きさ
を示す。The first figure shows surface roughening on the front and back sides of lead frame 2.
For example, by electric discharge machining, a plurality of concavo-convex portions 4 are formed by alternately forming convex portions 4a with pointed tips and concave portions 4b having a substantially semi-elliptical shape. Then, this groove-shaped uneven portion 4 is subjected to electroplating treatment, and the sealing resin 3 is coated thereon. In other words, the second embodiment has a space 13 having a wedge-shaped cross section from which the knob-shaped portion 5a on the lead frame 2 side protrudes, and a resin portion 14 that fills the space 13 and complements the space 13. Both indicate the size of the sealing resin 3-4.
また、上述した第１および第２の実施例では、角形、先
端がとんがった山形の凹凸部をリードフレームに形成し
て粗面とし、これに電気メッキを施すようにしたが、む
ろん、それ以外の形状を用いて投錨効果を形成するよう
にしてもよい。もちろん、溝状、以外の形状を用いても
、同様な効果を奏する。In addition, in the first and second embodiments described above, the lead frame is formed with a rectangular or chevron-shaped uneven portion with a pointed tip to give a rough surface, and electroplating is applied to this. An anchoring effect may be created using the shape of the anchor. Of course, the same effect can be obtained even if a shape other than the groove shape is used.
なお、上述した第１および第２の実施例とも、粗面加工
に放電加工を用いたが、それ以外のサンドベー゛バー、
エツチング、小孔等による加工を用いてもよい。また封
止樹脂として、ＰＰＣを用いたが、それ以外のＬＣＰ
（リキッドクリスタルポリマー）、エポキシ樹脂等を用
いてもよい。むろん、封止樹脂は熱可塑性樹脂でなく、
熱硬化性樹脂を用いてもよい。またリードフレームも、
Ｃｕ、Ｆｅに限らず、４２７０イなどを用いてもよい。In addition, although electric discharge machining was used for rough surface machining in both the first and second embodiments described above, other sand barbers,
Processing such as etching and small holes may also be used. In addition, although PPC was used as the sealing resin, other LCP
(liquid crystal polymer), epoxy resin, etc. may also be used. Of course, the sealing resin is not a thermoplastic resin,
Thermosetting resin may also be used. Also, the lead frame
Not limited to Cu and Fe, 4270I, etc. may be used.
さらに電気メッキ処理も、ｒＮｉＪでな（、ｒＣｒＪ
、ｒＡｇＪなどを用いてもよい。Furthermore, the electroplating process is performed using rNiJ (, rCrJ
, rAgJ, etc. may also be used.
［発明の効果］
以上説明したように請求項１および請求項２に記載の電
子部品の封止構造およびその封止方法によれば、電気メ
ッキ処理によって形成された内部に膨出部が張り出る空
間と、該空間に充填された樹脂部分自身とが協同して、
封止樹脂が離れる方向の動きを規制していく。[Effects of the Invention] As explained above, according to the electronic component sealing structure and the sealing method according to claims 1 and 2, a bulge protrudes inside the interior formed by electroplating. The space and the resin part itself filled in the space cooperate,
The movement of the sealing resin in the direction of separation is regulated.
したがって、両者を離すような力が働いたとしても、離
反せずに密着状態を維持することができ、封止樹脂の密
若性および接着性の効果を図ることができる。しかも、
機械的に投錨効果を生じさせるので、従来のように封止
樹脂自体の曲げ弾性。Therefore, even if a force is applied to separate the two, the adhesion state can be maintained without separation, and the sealing resin can be improved in its youthfulness and adhesiveness. Moreover,
Since it mechanically creates an anchoring effect, the bending elasticity of the sealing resin itself, as in the case of conventional methods.
曲げ強度、クリープ特性を低下せずにすみ、耐久性にも
優れる。There is no need to reduce bending strength or creep properties, and it has excellent durability.
第１図ないし第１３図はこの発明の第１の実施例を示し
、第１図は第２図中、Ａ部分で示されるリードフレーム
廻りを拡大して示す断面図、第２図は半導体装置の封止
構造を示す断面図、第３図は第２図中、Ｂ−Ｂ線に沿う
断面図、第４ ｔ＜Ｉは封止方法の工程を説明するため
のブロック図、第５図ないし第１０図は角部の曲率の違
いによる電気メッキのメッキ層の分布を示す断面図、第
１１図ないし第１３図は面の曲率の違いによる電気メッ
キのメッキ層の分布を示す断面図、第１４図はこの発明
の第２の実施例の要部を示す断面図、第１５図は従来の
封止構造を採用している半導体装置を示す断面図、第１
６図はその斜視図である。
２・・・リードフレーム、３・・・封止樹脂（封止樹脂
層）、４・・・凹凸部、５・・・メッキ層、５ａ・・・
こぶ状部分（膨出部）、８ａ・・・空間。。
出願人代理人 弁理士 鈴江武彦
第１図
第２図
第３図
第４図
第５図 第６図 第７図
第８図 第９図 第１０図
第１１図 第１２図 第１３図
第１４図
ニ為
図
、３
第１６1 to 13 show a first embodiment of the present invention, FIG. 1 is an enlarged cross-sectional view of the area around the lead frame indicated by section A in FIG. 2, and FIG. 2 is a semiconductor device. FIG. 3 is a cross-sectional view taken along the line B-B in FIG. Figure 10 is a cross-sectional view showing the distribution of the electroplated layer due to differences in corner curvature; Figures 11 to 13 are cross-sectional views showing the distribution of the electroplated layer due to differences in surface curvature; FIG. 14 is a cross-sectional view showing essential parts of a second embodiment of the present invention, FIG. 15 is a cross-sectional view showing a semiconductor device employing a conventional sealing structure, and FIG.
FIG. 6 is a perspective view thereof. 2... Lead frame, 3... Sealing resin (sealing resin layer), 4... Uneven portion, 5... Plating layer, 5a...
Knob-shaped portion (bulge), 8a...space. . Applicant's Representative Patent Attorney Takehiko Suzue Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Ni Tamezu, 3 No. 16
Claims (1)
によって固着されたメッキ層と、このメッキ層を被覆す
る封止樹脂層とを具備したことを特徴とする電子部品の
封止構造。 ２、リードフレームの外表面に粗面加工を した後、電気メッキ処理でリードフレームの外表面にメ
ッキを施し、その後、封止樹脂層を被覆させることを特
徴とする電子部品の封止方法。[Claims] 1. A lead frame having a roughened outer surface, a plating layer fixed to the outer surface of the lead frame by electroplating, and a sealing resin layer covering the plating layer. A sealing structure for electronic components, characterized by comprising: 2. A method for sealing electronic components, which comprises roughening the outer surface of the lead frame, plating the outer surface of the lead frame by electroplating, and then covering the outer surface with a sealing resin layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12888389A JPH02308555A (en) | 1989-05-24 | 1989-05-24 | Structure and method for sealing electronic component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12888389A JPH02308555A (en) | 1989-05-24 | 1989-05-24 | Structure and method for sealing electronic component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02308555A true JPH02308555A (en) | 1990-12-21 |
Family
ID=14995712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12888389A Pending JPH02308555A (en) | 1989-05-24 | 1989-05-24 | Structure and method for sealing electronic component |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02308555A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0579464A2 (en) * | 1992-07-11 | 1994-01-19 | Shinko Electric Industries Co. Ltd. | Metal insert and a surface roughening treatment method for it |
| EP2574441A1 (en) | 2011-09-28 | 2013-04-03 | Hitachi Automotive Systems, Ltd. | Composite molded body of metal member and molded resin member, and surface processing method of metal member |
| EP3089856A4 (en) * | 2013-12-31 | 2017-09-20 | BYD Company Limited | Metal-plastic composite and method for producing the same |
| US9956744B2 (en) | 2012-02-24 | 2018-05-01 | Shenzhen Byd Auto R&D Company Limited | Shell, method of preparing the shell and electronic product comprising the shell |
| JP2019083323A (en) * | 2014-11-20 | 2019-05-30 | 日本精工株式会社 | Dissipation substrate for mounting electronic component |
-
1989
- 1989-05-24 JP JP12888389A patent/JPH02308555A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0579464A2 (en) * | 1992-07-11 | 1994-01-19 | Shinko Electric Industries Co. Ltd. | Metal insert and a surface roughening treatment method for it |
| EP0579464A3 (en) * | 1992-07-11 | 1994-03-23 | Shinko Electric Ind Co | |
| US5585195A (en) * | 1992-07-11 | 1996-12-17 | Shinko Electric Industries Company, Limited | Metal insert and rough-surface treatment method thereof |
| EP2574441A1 (en) | 2011-09-28 | 2013-04-03 | Hitachi Automotive Systems, Ltd. | Composite molded body of metal member and molded resin member, and surface processing method of metal member |
| US9956744B2 (en) | 2012-02-24 | 2018-05-01 | Shenzhen Byd Auto R&D Company Limited | Shell, method of preparing the shell and electronic product comprising the shell |
| EP3089856A4 (en) * | 2013-12-31 | 2017-09-20 | BYD Company Limited | Metal-plastic composite and method for producing the same |
| US9999997B2 (en) | 2013-12-31 | 2018-06-19 | Byd Company Limited | Metal-plastic composite and method for producing the same |
| JP2019083323A (en) * | 2014-11-20 | 2019-05-30 | 日本精工株式会社 | Dissipation substrate for mounting electronic component |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4666226A (en) | Miniature small pitch connection element and a process for manufacturing such a connection element | |
| US5652461A (en) | Semiconductor device with a convex heat sink | |
| US6849930B2 (en) | Semiconductor device with uneven metal plate to improve adhesion to molding compound | |
| JP2552822B2 (en) | Semiconductor package and manufacturing method thereof | |
| JPH02308555A (en) | Structure and method for sealing electronic component | |
| GB2305000A (en) | Micropackage for an electronic memory card | |
| KR20000053570A (en) | Tape carrier for bga and semiconductor device using the same | |
| JP2001298142A (en) | Resin-sealed semiconductor device | |
| EP0723293B1 (en) | Semiconductor device with a heat sink and method of producing the heat sink | |
| KR19980070675A (en) | Semiconductor package having offset die pad and manufacturing method thereof | |
| JPS611042A (en) | Semiconductor device | |
| JPH05315526A (en) | Semiconductor device | |
| JPS58166677A (en) | Terminal unit for fuel cell | |
| JP7215110B2 (en) | Lead frames and semiconductor equipment | |
| JPH02158146A (en) | Manufacture of module for ic card | |
| JPS61194754A (en) | Semiconductor device | |
| JPS6024199B2 (en) | Current-carrying body for plating | |
| JP2901281B2 (en) | Solid electrolytic capacitor and method of manufacturing the same | |
| JPH02153542A (en) | Manufacture of integrated circuit device | |
| JPS6021578A (en) | Piezoelectric bimorph | |
| JP3112734B2 (en) | Lead frame manufacturing method | |
| JPS60154590A (en) | Flexible electric circuit board | |
| JPH1022430A (en) | Lead frame member and manufacture thereof | |
| JPH06160880A (en) | Wiring structure and production of conductive member | |
| JPH02133951A (en) | Resin-sealed type semiconductor device |