JPH02304304A - Method for plotting or inspecting pattern - Google Patents
Method for plotting or inspecting patternInfo
- Publication number
- JPH02304304A JPH02304304A JP1125141A JP12514189A JPH02304304A JP H02304304 A JPH02304304 A JP H02304304A JP 1125141 A JP1125141 A JP 1125141A JP 12514189 A JP12514189 A JP 12514189A JP H02304304 A JPH02304304 A JP H02304304A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- expansion
- pattern
- contraction
- deflection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 230000008602 contraction Effects 0.000 claims abstract description 25
- 238000009826 distribution Methods 0.000 claims abstract description 17
- 238000007689 inspection Methods 0.000 claims abstract description 9
- 238000005452 bending Methods 0.000 claims description 11
- 230000005484 gravity Effects 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 4
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 3
- 238000012937 correction Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、液晶パネル、シャドウマスクまたはサーマル
ヘプト等を製造するためのガラスマスク等の基板にパタ
ーンを描画し、または該基板に描画されているパターン
を検査する方法に係り、特に基板の自重によるたわみに
よって生ずるパターン伸縮の補正に関するものである。Detailed Description of the Invention [Object of the Invention] (Industrial Application Field) The present invention relates to drawing a pattern on a substrate such as a glass mask for manufacturing a liquid crystal panel, a shadow mask, a thermal hept, etc. The present invention relates to a method of inspecting a pattern drawn on a substrate, and particularly relates to correction of pattern expansion/contraction caused by deflection of a substrate due to its own weight.
（従来の技術〉
この種の描画または検査を行うのに、基板の下面全体を
支持せず、端部の数箇所のみを支持して基板を水平に保
持する場合がある。このような基板の支持方法は、基板
が小形の場合には平面度を比較的得られるが、基板のサ
イズが次第に大形化するに連れて、自重によるたわみが
問題となってきた。特開昭５９−１５０４２２号公報に
は、１辺の長さが約１３０訓のガラスまタハ合成石英板
のマスクすなわち基板の端部を支持したとき、該基板の
たわみによるパターン伸縮の問題が示され、同公報には
この問題を解決する方法として、基板の１組の対向する
２辺に沿う方向のたわみを許容値内に納めるように定め
て該２辺上のそれぞれ２箇所を支持し、王として他の２
辺に沿う方向のたわみを生ずる工うにしてたわみを単純
化し、基板表面の平面度分布を測定して前記たわみによ
る基板表面の伸縮量の分布を求め、この伸縮量の分布に
基づいて補正を行なうことにより、正確な描画または検
査全行なうことが提案されている。(Prior art) When performing this type of drawing or inspection, the substrate is sometimes held horizontally by supporting only a few edges of the substrate without supporting the entire bottom surface of the substrate. The support method can provide relatively good flatness when the substrate is small, but as the size of the substrate gradually increases, deflection due to its own weight becomes a problem. JP-A-59-150422 The publication describes the problem of pattern expansion and contraction due to deflection of the substrate when supporting the edges of a glass or synthetic quartz plate mask or substrate with a side length of approximately 130 mm. As a method to solve the problem, the deflection in the direction along one set of two opposing sides of the board is determined to be within the allowable value, and two positions on each of the two sides are supported, and the other two sides are
The deflection is simplified by creating a deflection in the direction along the sides, the flatness distribution of the substrate surface is measured, the distribution of the amount of expansion and contraction of the substrate surface due to the deflection is determined, and the correction is made based on the distribution of the amount of expansion and contraction. It is proposed to perform accurate drawing or inspection by performing the following steps.
（発明が解決しようとする課題）
ところで、従来は基板の１辺が１３０−１８０．、ｍ程
度と比較的小形であって容易に固定できること、さらに
固定の几めのフラング力によって基板が変形することを
防止することのために、真空吸着などにより、基板が移
動しない程度の比較的小さなりランプ力で固定してい念
。この友め、基板１０ば、第４図に示すように、その上
面は縮み、下面は伸びる単純なたわみであり、そのため
、上記公報のような高さ分布を測定しなくても、基板１
０の４隅に設けたアライメントマークの水平面内の位置
全測定することによってたわみによるパターンの変形を
おおよそ知ることができ、実用上許容されるパターン描
画または検査が可能であっ几。(Problem to be Solved by the Invention) Conventionally, one side of the board was 130-180. In order to prevent the board from deforming due to the flanging force of the fixation, we used vacuum suction to prevent the board from moving. Make sure to use a small lamp to secure it in place. As shown in FIG. 4, this friend, the substrate 10, has a simple flexure in which its upper surface contracts and its lower surface expands.
By measuring all positions in the horizontal plane of the alignment marks provided at the four corners of 0, it is possible to roughly know the deformation of the pattern due to deflection, and it is possible to draw or inspect a pattern that is acceptable in practice.
しかしながら、液晶パネル、シャドウマスクま几（１サ
ーマルヘツド等を製作する念めのガラスマスクのように
、基板１０が例えば、縦横的５Ｑ３ｍｍＸ６ ！ ０
＋ａ＋（２０”Ｘ２４”ｌ 〜約 ７ ｌ １ｍ
ｍＸ８１ ３ｍｍ （２ど゛ ×３２″）の工うに大形
な場合、上記の工うな支持方法では基板１０を確実に保
持できないと共に、たわみ量が非常に大きくなってしま
う問題があり几。However, like a glass mask for manufacturing a liquid crystal panel, a shadow mask box (1 thermal head, etc.), the substrate 10 is, for example, 5Q3mmX6!
+a+(20”X24”l ~ approx. 7l 1m
If the substrate is very large, measuring 3mm x 81mm (2mm x 32mm), the above-mentioned support method will not be able to securely hold the substrate 10, and the amount of deflection will become extremely large.
本発明は、大形の基板であってもたわみ量ヲ工り小さく
押えつつ確実に保持し、かつ簡単にしてより正確にたわ
みによるパターン伸縮の補正を行って描画−！たは検査
することのできる方法を提供することを目的としている
。The present invention makes it possible to reliably hold even large substrates while keeping the amount of deflection small, and to easily and accurately correct pattern expansion and contraction due to deflection. The purpose is to provide a method that can be used to test
（課題を解決するための手段）
上記目的全達成するための本発明は、矩形平板状の基板
表面にパターンを描画し、またに該基板表面に描画され
ているパターンを検査するに際し、基板の２組の対向す
る２辺のうち１組の対向する２辺に沿う端部のみを水平
に配置された基板支持部の基準面に工って支持すると共
に、基板の端部全基準面に向けて重力方向に固定したと
き基板の自重により発生する２つの基準面の端部におけ
る基板の最大曲げモーメントより大きなりランプ力で基
板の端部全基準面に固定し、２組の対向する２辺のうち
の他の１組の対向する２辺の少なくとも１辺に沿って基
板表面に設けられている４個用上のアライメントマーク
の水平方向位置を検出し、この検出値に基づいて前記能
の１組の対向する２辺に沿う方向の基板表面の伸縮量の
分布を求め、基板表面へのパターンの描画ｔたは該基板
表面に描画されているパターンの検査を前記伸縮量の分
布に基づいて補正しつつ行うものである。(Means for Solving the Problems) In order to achieve all of the above objects, the present invention provides a method for drawing a pattern on the surface of a rectangular flat substrate and inspecting the pattern drawn on the surface of the substrate. Out of the two pairs of opposing two sides, only the edges along one pair of opposing two sides are supported by being placed on the reference plane of the horizontally arranged board support part, and the entire edge of the board is directed toward the reference plane. When the board is fixed in the direction of gravity, the board's edges are fixed to the reference plane with a ramp force that is greater than the maximum bending moment of the board at the ends of the two reference planes generated by the board's own weight, and the two pairs of opposing two sides are The horizontal position of the four upper alignment marks provided on the substrate surface along at least one of the two opposing sides of the other pair is detected, and the alignment marks for the above-mentioned functions are determined based on this detected value. The distribution of the amount of expansion and contraction of the substrate surface in the direction along one set of two opposing sides is determined, and the drawing of a pattern on the substrate surface or the inspection of the pattern drawn on the substrate surface is based on the distribution of the amount of expansion and contraction. This is done while making corrections.
（作用）
本発明は、上記のようなりランプ力に工っ゛Ｃ基板の端
部を基板支持部の基準面に固定するｔめ、基板の之わみ
は第２図に示す↓うになる。すなわち、従来は第４図に
示すように、基板の端部が基準面に密着していなかった
のに対し、本発明では基板の端部が基準面に完全に密着
した状態となり、従来方法に対し最大たわみ量は寿にな
る。また、几わみは１組の対向する２辺に沿う端部を基
準面に完全に密着させるため、この基準面の平面度を高
めておくことに↓り該２辺に沿う方向のたわみおよび変
形は小さく押えられ、他の２辺に沿う方向に前記第２図
１に示すたわみを生ずる。このたわみによる基板表面の
伸縮は、従来の第４図の場合と異なり、中央部分では縮
むが両端寄りでは伸びる。そこで、この伸縮量の分布を
前記４個以上のアライメントマークによって検出し、そ
れに基づいて描画または検査全行うことにより、大形の
基板に対するパターン描画または検査をより正確に行う
ことができる。(Function) The present invention utilizes the lamp force as described above to fix the edge of the substrate to the reference surface of the substrate support, so that the substrate deflection becomes as shown in FIG. 2. That is, as shown in FIG. 4, in the past, the edge of the substrate was not in close contact with the reference surface, but in the present invention, the edge of the substrate is completely in contact with the reference surface, which is different from the conventional method. On the other hand, the maximum amount of deflection is longevity. In addition, in order to make the edges of a pair of opposing sides completely adhere to the reference surface, the flatness of this reference surface should be increased. The deformation is kept small, and the deflection shown in FIG. 2 is produced in the direction along the other two sides. The expansion and contraction of the substrate surface due to this deflection differs from the conventional case shown in FIG. 4, in that it contracts at the center but stretches at both ends. Therefore, by detecting the distribution of the amount of expansion and contraction using the four or more alignment marks and performing all drawing or inspection based on the distribution, it is possible to more accurately draw or inspect a pattern on a large substrate.
（実施例）
以下本発明の実施例について第１図ないし第３図を参照
して説明する。第１図において、１０は基板、１１は水
平に配置され几基板支持部である。(Example) Examples of the present invention will be described below with reference to FIGS. 1 to 3. In FIG. 1, 10 is a substrate, and 11 is a horizontally arranged substrate support section.
基板支持部１（は、基板１０上のパターン領域＋ＯＡよ
り大きな窓１２を有し、基板１０の２組の対向する上下
および左右の各２辺のうち、長辺側の第１図において左
右の２辺の端部のみが基板支持部１１の上面すなわち基
準面＋１Ａ上に載る工うになっている。The substrate support part 1 (has a window 12 larger than the pattern area + OA on the substrate 10, and is located on the left and right sides in FIG. Only the ends of the two sides rest on the upper surface of the substrate support section 11, that is, the reference surface +1A.
基板支持部１１には、３つの位置決め用突起１３が設け
られ、基板１０ｔ−基板支持部１１上の所定位置に設置
することができるようになっている。基準面１臥は平面
度良く加工され、基板１０の左右２辺の端部が載る位置
には２列の真空チャック溝＋４Ａ、１４Ｂがそれぞれ左
右２辺に沿うように設けられている。The substrate support 11 is provided with three positioning protrusions 13 so that the substrate 10t can be placed at a predetermined position on the substrate support 11. The reference surface 1 is machined to have good flatness, and two rows of vacuum chuck grooves +4A and 14B are provided along the two left and right sides, respectively, at positions on which the ends of the two left and right sides of the substrate 10 are placed.
真空チャックＩ！Ｉｌ＄ １４Ａ、 ＋４８Ｆｓ、、第
２図に示−ｊＬうに、基板１０の端部全基準面！１Ａに
完全に密着させるのに必要なりランプ力を有する工うに
構成されている。すなわち、第２図に示す工うな、いわ
ゆる両端固定のはり構造における１はり′すなわち基板
１０の自重による曲げモーメン）Ｍｆｌ、第３図に曲線
ｍで示すようになり、固定部端すなわち第２図に示す基
準面＋１Ａの窓１２側の端部ａ。Vacuum chuck I! Il$ 14A, +48Fs, As shown in FIG. 2, the entire reference plane at the end of the board 10! It is constructed to have the necessary lamp force to bring it into complete contact with 1A. In other words, in the so-called beam structure with both ends fixed, as shown in FIG. An end a on the window 12 side of the reference plane +1A shown in FIG.
ｔ２
ｄで最大曲げモーメン） Ｍｍａｘ ＝ −−信「であ
り、中央部で曲げモーメントの方向が逆になり、中央の
曲げモーメン）Ｍｃ＝−３！’−である。ただし、Ｗは
基板１０のａｄ間の重量、ｔはａｄ間の距離である。そ
こで、真空チャツク溝＋４Ａ、１４Ｂによるりｔ２
ランプ力は、Ｍｍａｘ ＝−−７７−４９大きな曲げモ
ーによる曲げモーメントＭｐは、次の式で与えられる。The maximum bending moment at t2 d) is Mmax = - - Shin, the direction of the bending moment is reversed at the center, and the bending moment at the center is) Mc = -3!'-. However, W is the maximum bending moment of the substrate 10 The weight between ad and t is the distance between ad. Therefore, the vacuum chuck groove +4A, 14B t2 The lamp force is Mmax = -77-49 The bending moment Mp due to the large bending force is given by the following formula. It will be done.
Ｍｐ＝＝ｔｌＸｅＸＬＸＰ＋ｔ２ＸｅＸＬＸＰただし一
、 Ｚｌ ＋ １２は端部ａまたはｂから真空チャツク
溝＋４Ａ、１４Ｂの中心までの距離、ｅは該溝１４Ａ、
１４Ｂの幅、Ｌは該溝＋４Ａ、１４Ｂのそれぞれの合計
長さ、Ｐは単位面積当りの真空力である。Mp==tlXeXLXP+t2XeXLXP However, Zl + 12 is the distance from the end a or b to the center of the vacuum chuck groove +4A, 14B, e is the groove 14A,
The width of 14B, L is the total length of the groove +4A and 14B, and P is the vacuum force per unit area.
そこで、前記総りランプカによる曲げモーメンｔ２
）ＭＰが、Ｍｍａｘ ＝−１２より大きくなる工うに、
前記ｔ、、ｔ、ｅ ＩＬ ＩＰｋ定めて、基板１０の端
部を基準面＋１Ａに密着させる↓うにしである。Therefore, if the bending moment t2)MP due to the total ramp force becomes larger than Mmax = -12,
The above t, t, e IL IPk are determined, and the end of the substrate 10 is brought into close contact with the reference surface +1A.
ま之、第３図から明らかな工うに、端部ａま友はｄから
それぞれ０．２１１ｔの位置す、ｃ ’に境にして、ａ
ｂ間お工びｃｄ間では曲げモーメン）Ｍが負であり、ｂ
Ｃ間では正であるため、ａｂ間およびｃｄ間では基板１
０の表面（上面）は伸び、ｂｃ間では縮む。そこで、上
記自重によってたわみを生ずる側の基板１０の上下の２
辺に沿う基板表面の好ましくは前記ａ、ｂ、ｃ、ｄに近
い位置に、アライメントマーク＋５３ 、Ｉ５ｂ 、
１５ｃ 、＋５ｄお工び＋６３．１６ｂ。However, as is clear from Fig. 3, the ends a are located at 0.211t from d, and from c', a
Between b and cd, the bending moment) M is negative, and b
Since it is positive between C, substrate 1 is positive between ab and cd.
The surface (upper surface) of 0 expands and contracts between b and c. Therefore, there are two
Alignment marks +53, I5b,
15c, +5d work +63.16b.
１６Ｃ，＋６ｄ （第１図参照）を設け、それらの位置
全検出できる工うにする。16C and +6d (see Figure 1) are provided so that their entire position can be detected.
次いでパターン検査を例としてその方法全説明すると、
パターン領域＋ＯＡに所定のパターンが形成されている
ガラスマスクすなわち基板１０を、図示しない検査ステ
ージに設けられている基板支持部１１の基準面＋１Ａ上
に、第１図に示す工うに載置する。このとき、基板１１
げ５、第１図において左右の長辺側の２辺の端部のみが
基準面１ｔＡによって支持されているのみであるため、
基板１０は第４図に示すようｋたわみを生ずる。Next, the entire method will be explained using pattern inspection as an example.
A glass mask, that is, a substrate 10 having a predetermined pattern formed in a pattern area +OA is placed on a reference surface +1A of a substrate support 11 provided on an inspection stage (not shown) in the structure shown in FIG. At this time, the substrate 11
5. In Fig. 1, only the ends of the left and right long sides are supported by the reference plane 1tA, so
The substrate 10 is deflected as shown in FIG.
次いで真空チャック溝＋４Ａ、Ｉ４Ｂに、前述した工う
な真空力Ｐを作用させて、基板１０の左右の端部を第２
図に示す工うに基準面＋１Ａに完全に密着させるクラン
プカ全土じさせて、基板１０を基準面＋１Ａ上に固定す
る。Next, the vacuum force P as described above is applied to the vacuum chuck grooves +4A and I4B, and the left and right ends of the substrate 10 are
As shown in the figure, the board 10 is fixed on the reference surface +1A by making the entire clamping force completely come into contact with the reference surface +1A.
このとき、基板１０は左右の２辺の全体が基準面１１Ａ
に密着固定されるため、該左右の２辺に沿う方向の之わ
みは生じず、基準面＋１Ａの平面度に工っで定められる
所定の変形範囲内に納められる。At this time, the entire two left and right sides of the substrate 10 are the reference plane 11A.
Since the deformation is closely fixed to the left and right sides, no deflection occurs in the direction along the left and right sides, and the deformation is within a predetermined deformation range determined by the flatness of the reference plane +1A.
他方、上下の２辺に沿う方向には１、いわゆる両端固定
のはり構造におけるたわみ全土ずる。その友わみ量δは
、次の式で与えられる。On the other hand, in the direction along the two upper and lower sides, the entire deflection in a so-called beam structure with both ends fixed is 1. The amount of friendship δ is given by the following formula.
ただし、Ｗ、ｔは前述したＷ 、 ｔと同じであり、Ｅ
ｉｄ基板１０のヤング率、工は基板１０の断面二次モー
メント、ｘは固定部端ａからの距離である。However, W and t are the same as W and t mentioned above, and E
id is the Young's modulus of the substrate 10, x is the moment of inertia of the substrate 10, and x is the distance from the fixed part end a.
上記式からａｄ間の中央に現われる最大たわみ量Ｉ
Ｗｔ’
δｍａｘ＝−面τ・−西二となる・
他方、第４図の場合は、
５ Ｗｔ’
から、δ’ｍａｘ ＝□・□である。From the above formula, the maximum deflection I that appears in the center between ad
Wt' δmax=-plane τ・-Nishiji. On the other hand, in the case of FIG. 4, from 5 Wt', δ'max =□・□.
３８４ Ｅｌ
そこで、第１図に示す工うに基板１０の端部を固定する
ことに工り、第４図の場合に比較して最■
太之わみ量は百に押えられる。384 El Therefore, by fixing the end of the substrate 10 using the method shown in FIG. 1, the maximum amount of deflection can be suppressed to 100 compared to the case shown in FIG.
次いで、図示しないアライメントマーク検出手段によっ
て、アライメントマーク１５ａ〜＋５ｄお工び＋６ａ〜
＋６ｄの水平面内における位置を検出する。Next, alignment mark detection means (not shown) detects alignment marks 15a to +5d and +6a to +5d.
Detect the position in the horizontal plane of +6d.
ｓ
なお、これらのアライメントマーク１５ａ−ｄお工＾
び１６ａ〜＋６ｄの前述した基板１０のたわみによる高
さ方向の位置変化は、δｍａｘで１０ｐｍ程度であるた
め、この高さ変化に伴なう水平面内の位置変化は無視で
きる程の極めて小さい値である。これに対し、たわみに
よる基板１ｏの表面の伸縮による水平面内の位置変化は
最大で１μｍ程度と、無視することのできない大きさで
あり、ａｂ間およびｃｄ間では伸び、ｂＣ間では縮む。s It should be noted that the position change in the height direction of these alignment marks 15a-d and 16a-+6d due to the aforementioned deflection of the substrate 10 is about 10 pm in δmax, so the horizontal plane due to this height change The position change within is an extremely small value that can be ignored. On the other hand, the positional change in the horizontal plane due to expansion and contraction of the surface of the substrate 1o due to deflection is about 1 μm at maximum, which is a size that cannot be ignored, and it expands between AB and CD, and contracts between bC.
この基板１０の表面の伸縮量を前記アライメントマーク
＋５２− ＋５ｄお工び＋６ａ〜＋６ｄの上下の２辺に
沿う方向の位置から検出する。なお、これらのアライメ
ントマーク＋５ａ〜＋５ｄおよび＋６ａ〜＋６ｄは、必
ずしも第一３図に示したａ〜ｄの位置に完全に一致して
いる必要はなく、各アライメントマーク１５ａ〜＋５ｄ
および＋６ａ〜＋６ｄの位置を特定しておくことにより
、計算で各アライメントマーク間の伸縮量の分布を求め
ることができるため、前記各アライメントマーク＋５ａ
〜＋５ｄお工び１６ａ〜＋６ｄの位置全図示しないコン
ピュータに取り込んで、設計値と比較することにより前
記伸縮量の分布を求める。The amount of expansion and contraction of the surface of the substrate 10 is detected from the positions along the two upper and lower sides of the alignment marks +52- +5d and +6a to +6d. Note that these alignment marks +5a to +5d and +6a to +6d do not necessarily have to completely match the positions a to d shown in FIG. 13, and each alignment mark 15a to +5d
By specifying the positions of +6a to +6d, it is possible to calculate the distribution of the amount of expansion and contraction between each alignment mark.
~ +5d The positions of the machining 16a to +6d are all imported into a computer (not shown) and compared with design values to determine the distribution of the amount of expansion and contraction.
こうして、基板１０のパターンが形成されている表面の
伸縮量の分布を求めたならば、パターン検出を開始する
が、このとき、検出パターンの位置または検出パターン
と比較する基準パターンの位置のいずれかに前記伸縮量
の分布に対応する補正を加えることにより、前記伸縮に
影響されない、パターン検出が行なわれる。Once the distribution of the amount of expansion and contraction of the surface of the substrate 10 on which the pattern is formed is determined, pattern detection is started. At this time, either the position of the detected pattern or the position of the reference pattern to be compared with the detected pattern is determined. By applying a correction corresponding to the distribution of the amount of expansion/contraction to the above, pattern detection is performed without being affected by the expansion/contraction.
なお、前記伸縮量の分布の計算は、必らずしも微細に求
める必要はなく、例えば、ａｂ間、ｂｃ間。Note that the calculation of the distribution of the amount of expansion and contraction does not necessarily have to be calculated in detail, for example, between ab and bc.
ｃｄ間の工うに大まかに区分してそれぞれの平均伸縮量
を求め、それぞれの区分ごとに補正値を定めるようにし
てもよく、この場合、アライメントマークの数を多くす
れば、より正確に補正できる。It is also possible to roughly divide the CDs and find the average amount of expansion and contraction for each, and then determine the correction value for each division. In this case, increasing the number of alignment marks allows for more accurate correction. .
前述した実施例は、アライメントマークを上下の２辺に
それぞれ設けた例を示したが、一方のみでも工いことは
言うまで・もない。Although the above-mentioned embodiment shows an example in which alignment marks are provided on each of the upper and lower sides, it goes without saying that alignment marks can also be provided on only one side.
以上述べた工うに本発明に↓れば、たわみを小さく押え
つつ基板表面の伸縮に対応した補正が可能であるため、
比較的小形の基板はもちろん特に大形の基板へのパター
ンの描画ま几ハ大形の基板に描画されているパターンの
検査をより確実かつより正確に行うことができる。According to the present invention as described above, it is possible to correct the expansion and contraction of the substrate surface while keeping the deflection small.
It is possible to draw patterns on not only relatively small substrates but also particularly large substrates, and to inspect patterns drawn on large substrates more reliably and accurately.
第１図は本発明の実施に用いる基板支持部お工び基板の
平面図、第２図に第１図の■−■線による拡大断面図で
基板の几わみを拡大して示す図、第３図は第２図に示す
基板の曲げモーメント図、第４図は従来の基板支持方法
における基板のたわみを第２図に対応させて示す断面図
である。
１０・・・基板、 １１・・・基板支持部、 １２
・・・窓、＋４Ａ、１４Ｂ・・・真空チャック溝、＋５
ａ〜１５ｄ、１６ａ〜１６ｄ・・・アライメントマーク
。FIG. 1 is a plan view of a board with a substrate support part used for carrying out the present invention, and FIG. 2 is an enlarged sectional view taken along the line ■-■ in FIG. 1, showing the thickness of the board in an enlarged manner. FIG. 3 is a bending moment diagram of the substrate shown in FIG. 2, and FIG. 4 is a sectional view corresponding to FIG. 2 and showing the deflection of the substrate in the conventional substrate supporting method. 10... Substrate, 11... Substrate support part, 12
...Window, +4A, 14B...Vacuum chuck groove, +5
a to 15d, 16a to 16d... alignment marks.
Claims (1)
板表面に描画されているパターンを検査するに際し、前
記基板の２組の対向する２辺のうち１組の対向する２辺
に沿う端部のみを水平に配置された基板支持部の基準面
によって支持すると共に、前記基板の端部を前記基準面
に向けて重力方向に固定したとき前記基板の自重により
発生する前記２つの基準面の端部における前記基板の最
大曲げモーメントより大きなクランプ力で前記基板の端
部を前記基準面に固定し、前記２組の対向する２辺のう
ち他の１組の対向する２辺の少なくとも１辺に沿って基
板表面に設けられている４個以上のアライメントマーク
の水平方向位置を検出し、この検出値に基づいて前記他
の１組の対向する２辺に沿う方向の前記基板表面の伸縮
量の分布を求め、前記基板表面へのパターンの描画また
は該基板表面に描画されているパターンの検査を前記伸
縮量の分布に基づいて補正しつつ行うことを特徴とする
パターンの描画または検査方法。When drawing a pattern on the surface of a rectangular flat substrate or inspecting a pattern drawn on the surface of the substrate, an edge along one set of two opposing sides of the two sets of opposing sides of the substrate. edges of the two reference surfaces that are generated due to the own weight of the substrate when the substrate is supported by a reference surface of a horizontally arranged substrate support part and the edge of the substrate is fixed in the direction of gravity toward the reference surface. The end of the substrate is fixed to the reference surface with a clamping force greater than the maximum bending moment of the substrate at The horizontal positions of four or more alignment marks provided on the substrate surface are detected along the horizontal direction, and based on the detected values, the amount of expansion and contraction of the substrate surface in the direction along the other pair of opposing sides is determined. A method for drawing or inspecting a pattern, characterized in that the distribution is determined, and drawing of a pattern on the surface of the substrate or inspection of the pattern drawn on the surface of the substrate is performed while correcting the distribution based on the distribution of the amount of expansion/contraction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12514189A JP2678942B2 (en) | 1989-05-18 | 1989-05-18 | Pattern drawing or inspection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12514189A JP2678942B2 (en) | 1989-05-18 | 1989-05-18 | Pattern drawing or inspection method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02304304A true JPH02304304A (en) | 1990-12-18 |
| JP2678942B2 JP2678942B2 (en) | 1997-11-19 |
Family
ID=14902878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12514189A Expired - Fee Related JP2678942B2 (en) | 1989-05-18 | 1989-05-18 | Pattern drawing or inspection method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2678942B2 (en) |
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|---|---|---|---|---|
| JP2005109333A (en) * | 2003-10-01 | 2005-04-21 | Canon Inc | Device for manufacturing semiconductor and method for manufacturing device |
| JP2006235321A (en) * | 2005-02-25 | 2006-09-07 | Hoya Corp | Method for manufacturing transparent substrate for mask blank, method for manufacturing mask blank, and method for manufacturing exposure mask |
| JP2007107884A (en) * | 2005-10-11 | 2007-04-26 | Hitachi High-Technologies Corp | Substrate inspection device and substrate inspection method |
| JP2007286072A (en) * | 2007-08-06 | 2007-11-01 | Kobe Steel Ltd | Method and apparatus for measuring flatness |
| JP2008014700A (en) * | 2006-07-04 | 2008-01-24 | Olympus Corp | Workpiece inspection method and workpiece inspection device |
| JP2008191020A (en) * | 2007-02-06 | 2008-08-21 | Hitachi High-Technologies Corp | Substrate inspection apparatus and substrate inspection method |
| JP2009175276A (en) * | 2008-01-22 | 2009-08-06 | Toshiba Corp | Photomask production method, photomask production system, and semiconductor device |
| JP2015064477A (en) * | 2013-09-25 | 2015-04-09 | 凸版印刷株式会社 | Method and apparatus for pattern position measurement and photomask |
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-
1989
- 1989-05-18 JP JP12514189A patent/JP2678942B2/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005109333A (en) * | 2003-10-01 | 2005-04-21 | Canon Inc | Device for manufacturing semiconductor and method for manufacturing device |
| JP4677180B2 (en) * | 2003-10-01 | 2011-04-27 | キヤノン株式会社 | Semiconductor manufacturing apparatus and device manufacturing method |
| JP2006235321A (en) * | 2005-02-25 | 2006-09-07 | Hoya Corp | Method for manufacturing transparent substrate for mask blank, method for manufacturing mask blank, and method for manufacturing exposure mask |
| JP2007107884A (en) * | 2005-10-11 | 2007-04-26 | Hitachi High-Technologies Corp | Substrate inspection device and substrate inspection method |
| JP4693581B2 (en) * | 2005-10-11 | 2011-06-01 | 株式会社日立ハイテクノロジーズ | Substrate inspection apparatus and substrate inspection method |
| JP2008014700A (en) * | 2006-07-04 | 2008-01-24 | Olympus Corp | Workpiece inspection method and workpiece inspection device |
| JP2008191020A (en) * | 2007-02-06 | 2008-08-21 | Hitachi High-Technologies Corp | Substrate inspection apparatus and substrate inspection method |
| JP2007286072A (en) * | 2007-08-06 | 2007-11-01 | Kobe Steel Ltd | Method and apparatus for measuring flatness |
| JP2009175276A (en) * | 2008-01-22 | 2009-08-06 | Toshiba Corp | Photomask production method, photomask production system, and semiconductor device |
| JP2015064477A (en) * | 2013-09-25 | 2015-04-09 | 凸版印刷株式会社 | Method and apparatus for pattern position measurement and photomask |
| JP2021043391A (en) * | 2019-09-13 | 2021-03-18 | 信越化学工業株式会社 | Method for manufacturing reflection type mask blank, reflection type mask blank and method for manufacturing reflection type mask |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2678942B2 (en) | 1997-11-19 |
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