JP2005109333A - Device for manufacturing semiconductor and method for manufacturing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To preliminarily prevent the manufacturing of any defective product or defective element by minimizing the distortion of a projected image. <P>SOLUTION: This semiconductor manufacturing device is provided with a reticle stage having a reticle holder for holding a reticle and a measuring means for measuring the position of a mark plotted on the reticle or the flatness of the reticle. This measuring means is configured to measure the position of the mark of the reticle or the flatness of the reticle before and after the reticle is held by the reticle holder, and to calculate the deformation amount of the reticle, and to correct it for minimizing the distortion of a projected image generated from the deformation. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a semiconductor manufacturing apparatus for manufacturing a semiconductor and a device manufacturing method for manufacturing a device using the apparatus.

  In recent years, with the miniaturization of semiconductor integrated circuit patterns, further improvements in resolution and overlay accuracy for semiconductor manufacturing apparatuses are required. In order to meet these demands, various technical proposals have been made for semiconductor exposure technology from various fields. With these technological advances, it has become possible to form diversified circuit pattern shapes with high resolution.

  Miniaturization of circuit patterns and improvement of resolution performance, on the other hand, narrow the allowable range of image formation fluctuation amount of the projected image by the projection optical system, and high precision manufacturing technology and high performance of the projection optical system including the reticle. The stability was sought. For this reason, not only the manufacturing accuracy of the projection optical system including the reticle is improved, but also the problem of how to measure and correct the projection image error caused by the manufacturing tolerances, and how the influence of changes in the exposure environment is measured. However, much effort has been made to correct it.

As a prior art for reducing the distortion of the pattern transferred to the photosensitive substrate, there is one described in Patent Document 1. This is to change the surface shape of the reticle attracting surface of the reticle holder by the surface shape deforming means (flange and piezo element) to control the distortion of the transferred pattern and minimize the distortion.
JP-A-9-82606

  As described in the conventional example, the amount of deformation that occurs when holding the reticle on the reticle holder is also limited in situations where the tolerance of the imaging variation amount and the error in the projected image caused by manufacturing tolerances must be taken into account. It is becoming an error factor that cannot be ignored.

  Regarding the deformation of the reticle, the surface accuracy of the reticle and the reticle holder, the suction pressure when the reticle is sucked by the reticle holder, and the contact state thereof are different for each suction location or each device. For example, as shown in FIG. 6A, it is assumed that the reticle holder 21 is completely horizontal and the reticle 22 is bent. In this case, a gap s is generated between the reticle 22 and the reticle holder 21. When the reticle 22 is vacuum-sucked and held by the reticle holder 21, the reticle 22 is attracted by the suction pressure and is attracted to the reticle holder 21 as shown in FIG. As a result, suction deformation occurs in the reticle 22.

  Conversely, even when the reticle 22 is assumed to be perfectly horizontal and the flatness of the reticle holder 21 is not perfectly horizontal, a gap is generated between the reticle 22 and the reticle holder 21, and the reticle 22 is vacuumed. When sucked and held, the reticle 22 is sucked and deformed. The amount of deformation of the reticle 22 and the reticle holder 21 varies depending on problems such as manufacturing tolerances, aging, aging deformation, environmental temperature surrounding the reticle 22, and the like. It will not be the same. In addition, the relative relationship between the reticle 22 and the reticle holder 21 is variously different.

  For this reason, the amount of deformation for each of the reticles used, and hence the amount of change in imaging performance, is different, and it is not possible to use a uniform correction value for all reticles or all devices (correctly correct). It is difficult). For example, the imaging fluctuation amount at the time of shipment of the semiconductor manufacturing apparatus can be recognized as a fluctuation characteristic of the imaging performance of the semiconductor manufacturing apparatus, a correction amount can be obtained for the fluctuation, and the imaging performance can be calculated. However, when using other reticles, the amount of reticle deformation varies depending on the reticle surface shape and the relative relationship between the reticle surface shape and the reticle holder surface shape. Can not be. In particular, when exposure is performed by sequentially exchanging reticles on a single wafer, fluctuation amounts of the imaging performance can be accumulated to cause a large error unless the reticle deformation amount is individually considered for each reticle. .

  An object of the present invention is to consider deformation caused by a reticle being held by a reticle holder in a semiconductor manufacturing apparatus, and that the amount of deformation varies depending on individual reticles, the accuracy of fabrication by each apparatus, and environmental changes. In view of this, the distortion correction amount of the projection optical system is obtained, and the projection image is corrected according to the correction amount.

  In order to solve the above problem, the amount of deformation of the reticle before and after the reticle is sucked and held by the reticle holder becomes a problem. Further, it is desirable that exposure and measurement are performed using a reference reticle, and adjustment is performed in advance in order to suppress distortion inherent to the projection lens or the semiconductor manufacturing apparatus.

  According to another aspect of the present invention, there is provided a semiconductor manufacturing apparatus including a holding mechanism for holding a reticle, a measuring unit that measures a position of a mark drawn on the reticle, and the holding unit that holds the reticle by the measuring unit. And means for measuring the position of the mark on the reticle before and after being held in step 1, and processing the measured data.

  According to another aspect of the present invention, there is provided a semiconductor manufacturing apparatus having a holding mechanism for holding a reticle, a measuring unit for measuring the flatness of the reticle, and the measuring unit for holding the reticle by the holding mechanism. Means for measuring the flatness of the reticle before and after holding, and processing the measured data.

  As described above, the positional deviation of the mark patterned on the reticle before and after the reticle holding by the reticle holder is measured and calculated on the reticle stage of the semiconductor manufacturing apparatus, and the influence of the positional deviation is minimized. Then, exposure is performed while correcting the distortion of the projection optical system. As a result, it is possible to perform correction in the actual exposure state for each reticle to be exposed and each apparatus.

  Since the present invention is configured as described above, it is possible to perform correction in the actual exposure state for each reticle to be exposed and each semiconductor manufacturing apparatus, and to minimize distortion of the projected image. Can do. As a result, production of defective products and defective elements can be prevented in advance.

The embodiments of the present invention are listed below.
[Embodiment 1]
In a semiconductor manufacturing method for manufacturing a semiconductor using a semiconductor manufacturing apparatus having a holding mechanism for holding a reticle, the reticle is held by the holding mechanism using means for measuring a position of a mark patterned on the reticle. The position of the mark patterned on the previous reticle is measured, and then the position of the mark patterned on the reticle after the reticle is held by the holding mechanism is measured. Production method.
[Embodiment 2]
In a semiconductor manufacturing method for manufacturing a semiconductor using a semiconductor manufacturing apparatus having a holding mechanism for holding a reticle, the reticle is held by the holding mechanism using means for measuring a position of a mark patterned on the reticle. The position of the mark patterned on the previous reticle is measured, and then the position of the mark patterned on the reticle after the reticle is held by the holding mechanism is measured, and then the mark position before and after the holding A semiconductor manufacturing method characterized in that a difference value between the two is calculated.
[Embodiment 3]
In a semiconductor manufacturing method for manufacturing a semiconductor using a semiconductor manufacturing apparatus having a holding mechanism for holding a reticle, the reticle is held by the holding mechanism using means for measuring a position of a mark patterned on the reticle. The position of the mark patterned on the previous reticle is measured, and then the position of the mark patterned on the reticle after the reticle is held by the holding mechanism is measured, and then the mark position before and after the holding A difference value between the two is calculated, and thereafter, the positional deviation of the mark patterned on the reticle due to reticle deformation is calculated from the calculated value.
[Embodiment 4]
In a semiconductor manufacturing method for manufacturing a semiconductor using a semiconductor manufacturing apparatus having a holding mechanism for holding a reticle, the reticle is held by the holding mechanism using means for measuring a position of a mark patterned on the reticle. The position of the mark patterned on the previous reticle is measured, and then the position of the mark patterned on the reticle after the reticle is held by the holding mechanism is measured, and then the mark position before and after the holding Then, the positional deviation of the mark patterned on the reticle due to reticle deformation is calculated from the calculated value, and then the distortion of the projection optical system is minimized so that the positional deviation amount is minimized. A semiconductor manufacturing method characterized by correcting the above.
[Embodiment 5]
In a semiconductor manufacturing method for manufacturing a semiconductor using a semiconductor manufacturing apparatus having a holding mechanism for holding a reticle, the reticle before the reticle is held by the holding mechanism using means for measuring the flatness of the reticle. A flatness of the reticle after the reticle is held by the holding mechanism is measured, and then the flatness of the reticle is measured.
[Embodiment 6]
In a semiconductor manufacturing method for manufacturing a semiconductor using a semiconductor manufacturing apparatus having a holding mechanism for holding a reticle, the reticle before the reticle is held by the holding mechanism using means for measuring the flatness of the reticle. After that, the flatness of the reticle after the reticle is held by the holding mechanism is measured, and then the difference value of the flatness before and after the holding is calculated. A method of manufacturing a semiconductor, characterized in that a deformation amount of a reticle is obtained from a value.
[Embodiment 7]
In a semiconductor manufacturing method for manufacturing a semiconductor using a semiconductor manufacturing apparatus having a holding mechanism for holding a reticle, the reticle before the reticle is held by the holding mechanism using means for measuring the flatness of the reticle. After that, the flatness of the reticle after the reticle is held by the holding mechanism is measured, and then the difference value of the flatness before and after the holding is calculated. A method of manufacturing a semiconductor, comprising: obtaining a deformation amount of a reticle from a value; and thereafter calculating a positional deviation of a mark patterned on the reticle due to the deformation of the reticle from the deformation amount.
[Embodiment 8]
In a semiconductor manufacturing method for manufacturing a semiconductor using a semiconductor manufacturing apparatus having a holding mechanism for holding a reticle, the reticle before the reticle is held by the holding mechanism using means for measuring the flatness of the reticle. After that, the flatness of the reticle after the reticle is held by the holding mechanism is measured, and then the difference value of the flatness before and after the holding is calculated. Then, the amount of deformation of the reticle is obtained from the value, and then the position displacement of the mark patterned on the reticle due to the deformation of the reticle is calculated from the amount of deformation, and then the amount of displacement of the projection optical system is minimized so that the amount of position displacement is minimized. A semiconductor manufacturing method characterized in that distortion is corrected.

  A first embodiment of the present invention will be described below with reference to FIG. FIG. 1 is a schematic view showing the periphery of a reticle stage 2 of a semiconductor manufacturing apparatus. As shown in FIG. 1, a semiconductor manufacturing apparatus is provided with a reticle 1 for baking a semiconductor pattern, and a reticle stage 2 having a reticle holder that is a holding mechanism that holds the reticle 1 by suction. . The reticle stage 2 sucks and holds the reticle 1 sent from the reticle transport unit (not shown) at the upper part of the reticle holder. A driving mechanism is mounted on the reticle stage 2, thereby moving and scanning in the front-rear direction to expose a drawing pattern on the reticle 1 onto a wafer 3 to be described later. The scanner according to the first embodiment moves the wafer stage 10 in synchronization with the movement of the reticle stage 2 and performs exposure through a certain slit.

  In addition, measurement sensors 4a and 4b, which are measurement means, measure the position of a measurement mark (not shown) drawn on the reticle 1 and measure the flatness of the reticle 1 above the reticle stage 2. However, two detectors are installed with the reticle 1 facing the reticle 1. The measurement sensors 4a and 4b are provided with a driving mechanism so as to be movable. An illumination system lens 6 for making the exposure light of an excimer laser (not shown) uniform is provided above an intermediate position between the two measurement sensors 4a and 4b. As a result, excimer laser light emitted by the excimer laser is guided to the illumination system lens 6.

  In addition, a projection lens 5 that is a projection optical system for performing exposure is installed below the reticle stage 2. The projection lens 5 includes a drive lens that is driven during distortion correction. A wafer stage 10 for placing and fixing the wafer 3 to be loaded is disposed below the projection lens 5.

  The two measurement sensors 4a and 4b are connected to the measurement unit 7 through signal lines, and the measurement unit 7 and the arithmetic processing unit 8 are connected by electric wires. The arithmetic processing unit 8 is also connected to the compensation unit 9 and the control unit 11 by electric wires. Further, the control unit 11 is connected to the two measurement sensors 4a and 4b, the reticle stage 2, and the wafer stage 10 by electric wires, and the compensation unit 9 is connected to the projection lens 5 by electric wires.

  With the above configuration, the specific operation of the semiconductor manufacturing apparatus according to the first embodiment will be described with reference to FIG. When creating an actual element with this semiconductor manufacturing apparatus, first, the operator carries the reticle 1 into the semiconductor manufacturing apparatus (step 1). The carried reticle 1 is sent onto a reticle stage 2 and its mark position is measured as a preparation for exposure. At the time of measurement, each measurement mark on the reticle 1 is measured by driving the reticle stage 2 and the measurement sensors 4a and 4b with driving mechanisms provided respectively.

  More specifically, when the reticle 1 is sent onto the reticle stage 2, first, a positioning operation for aligning the reticle 1 with a reference position is performed. By this positioning operation, the relative alignment between the reticle 1 and the reticle stage 2 is performed. Thereafter, with the reticle holder adsorbing the reticle 1, the reticle stage 2 moves so that the measurement mark on the reticle 1 enters the measurement area of the measurement sensors 4a and 4b. When the movement is completed, the reticle holder releases the suction of the reticle 1, and measures the measurement mark position before the reticle suction holding by the measurement sensors 4a and 4b (step 2).

  When the measurement of the measurement mark position before holding and holding the reticle is completed, the reticle holder holds and holds the reticle 1 and measures the measurement mark position after holding and holding by the measurement sensors 4a and 4b (step 3). Based on the image signals sent through the measurement sensors 4a and 4b, the measurement unit 7 measures the positional deviation amount of the measurement mark drawn on the reticle 1.

  The measurement unit 7 outputs these three data in synchronization by using the current position of the reticle stage 2 and the measurement sensors 4a and 4b as position data, and the measurement mark position of the reticle 1 measured before and after suction holding as data. To do. The synchronously output position data and the measurement mark position data on the reticle 1 are sent to the arithmetic processing unit 8 and stored at any time as data before and after reticle suction holding as the first measurement mark data. Thus, when the measurement mark positions before and after suction holding are measured at each measurement mark position, the arithmetic processing unit 8 stores this data as reticle whole surface data before and after suction holding.

  As a result of this measurement, two data, that is, data before suction holding and data after suction holding, are stored in the arithmetic processing unit 8. In the arithmetic processing unit 8, data is obtained by adding arithmetic processing to the two data. Process. In the case of the first embodiment, the difference between the data before holding the reticle suction and the data after holding the reticle suction is obtained, and this difference is used as a positional shift at each point on the reticle (step 4). Steps 2 to 4 are repeated at each image height.

  The result of this data processing and the distortion change of the projection image that has passed through the projection lens 5 of the semiconductor manufacturing apparatus are closely related, and the distortion change of the projection image can be predicted from the result of the arithmetic processing described above. If it is predicted from these data processing results that distortion occurs during exposure of the actual element and the overlay accuracy is deteriorated due to the distortion, the semiconductor manufacturing apparatus aims to reversely correct the generated distortion. A part of the lenses of the projection optical system is driven, or the reticle stage 2 and the wafer stage 10 are driven to perform distortion correction. In the semiconductor manufacturing apparatus according to the first embodiment, a part of the optical elements of the projection lens 5 is moved to perform the main correction (step 5).

  After the distortion correction based on the above calculation result is performed by the projection lens 5, the semiconductor manufacturing apparatus carries the wafer 3 onto the wafer stage 10 in the semiconductor manufacturing apparatus in order to perform the exposure operation, and starts the exposure operation ( Step 6). Note that the flatness of the reticle 1 is deformed during suction holding. That is, the measurement mark position need only be measured at the timing of exchanging the reticle 1, and need not be performed during the subsequent exposure operation.

  Next, a specific operation of the semiconductor manufacturing apparatus according to the second embodiment will be described with reference to FIG. When creating an actual element with this semiconductor manufacturing apparatus, first, the operator carries the reticle 1 into the semiconductor manufacturing apparatus (step 1). The loaded reticle 1 is sent onto a reticle stage 2 and its flatness (height direction position) is measured as a preparation for exposure. The measurement is obtained as position data in the height direction obtained by measuring the contrast of the measurement mark patterned on the reticle 1. At the time of measurement, the reticle stage 2 and the measurement sensors 4a and 4b are driven using a driving mechanism provided in each, and the flatness of the reticle 1 is measured.

  More specifically, when the reticle 1 is sent onto the reticle stage 2, first, a positioning operation for adjusting the reticle 1 to a reference position is performed. By this positioning operation, the relative positions of the reticle 1 and the reticle stage 2 are adjusted. Thereafter, with the reticle holder adsorbing the reticle 1, the reticle stage 2 moves so that the measurement mark on the reticle 1 enters the measurement area of the measurement sensors 4a and 4b. When the movement is finished, the reticle holder releases the suction, and the flatness (height direction position) measurement before holding the reticle suction is performed by the measurement sensors 4a and 4b (step 2).

  When the flatness (position in the height direction) measurement before holding and holding the reticle is completed, the reticle holder holds and holds the reticle 1, and the flatness (position in the height direction) after holding and holding the reticle is measured by the measurement sensors 4a and 4b. (Step 3). Based on the signals sent through the measurement sensors 4a and 4b, the measurement unit 7 measures the amount of positional deviation in the height direction of the measurement mark drawn on the reticle 1.

  The measuring unit 7 uses the current position of the reticle stage 2 and the positions of the measurement sensors 4a and 4b as position data, and the positional deviation in the height direction of the reticle 1 measured before and after suction holding as the flatness data. Output two data synchronously. The synchronously output position data and reticle flatness data are sent to the arithmetic processing unit 8 and stored as needed as flatness data before and after holding the reticle, which is the first measurement mark data. In this way, when the measurement of flatness before and after suction holding is completed at each measurement mark position, the arithmetic processing unit 8 stores the flatness data as reticle whole surface data before and after suction holding.

  As a result of the above measurement, two data, that is, data before suction holding and data after suction holding, are stored in the arithmetic processing unit 8, and the arithmetic processing unit 8 adds arithmetic processing to the two data to obtain data. Process. In the case of the first embodiment, the difference between the data before suction holding and the data after suction holding is obtained, and this difference is used as the reticle flatness difference (steps 4 and 5). Steps 2 to 4 are repeated at each image height.

  The result of the data processing and the distortion change of the projected image through the projection lens 5 of the semiconductor manufacturing apparatus are closely related, and the distortion change of the projected image can be predicted from the result of the arithmetic processing described above. If it is predicted from these data processing results that distortion will occur during exposure of actual elements and overlay accuracy will deteriorate due to distortion, this semiconductor manufacturing equipment aims to reversely correct the generated distortion, Distortion correction is performed by driving some lenses of the projection optical system in the apparatus or by driving the reticle stage 2 and the wafer stage 10. In the semiconductor manufacturing apparatus according to the second embodiment, a part of the optical elements of the projection lens 5 is moved to perform the main correction (step 6).

  After the distortion correction based on the above calculation result is performed by the projection lens 5, the semiconductor manufacturing apparatus carries the wafer 3 onto the wafer stage 10 in the semiconductor manufacturing apparatus in order to perform the exposure operation, and starts the exposure operation (step). 7). Note that the flatness of the reticle 1 is deformed during suction holding. That is, the flatness (position in the height direction) measurement only needs to be performed at the timing of exchanging the reticle 1, and need not be performed during the subsequent exposure operation.

Next, Example 3 will be described with reference to FIG. FIG. 7 is a schematic view showing the periphery of the reticle stage 2 of the semiconductor manufacturing apparatus. As shown in FIG. 7, the semiconductor manufacturing apparatus is provided with a reticle 1 for baking a semiconductor pattern, and a reticle stage 2 having a reticle holder that is a holding mechanism that holds the reticle 1 by suction. . The reticle stage 2 sucks and holds the reticle 1 sent from the reticle transport unit (not shown) at the upper part of the reticle holder. A driving mechanism is mounted on the reticle stage 2, thereby moving and scanning in the front-rear direction to expose a drawing pattern on the reticle 1 onto a wafer 3 to be described later. The scanner according to the third embodiment moves the wafer stage 10 in synchronization with the movement of the reticle stage 2 and performs exposure through a certain slit.

  The specific operation of the third embodiment will be described in detail with reference to FIG. When reticle 1 is fed onto reticle stage 2 (step 1), a positioning operation is first performed to align reticle 1 with a reference position. By this positioning operation, the relative positions of the reticle 1 and the reticle stage 2 are adjusted. Thereafter, with the reticle holder adsorbing the reticle 1, the reticle stage 2 moves so that the measurement area of the measurement sensors 12 a and 12 b enters the position for measuring the flatness of the reticle 1. When the movement is finished, the reticle holder releases the suction, and the flatness (height direction position) measurement before holding the reticle suction is performed by the measurement sensors 12a and 12b (step 2). In the measurement, the reticle flatness (position in the height direction) is measured based on the light receiving height when the obliquely incident light is applied to the surface of the reticle 1 from 12a and the reflected light is received by 12b.

  When the flatness (position in the height direction) measurement before holding and holding the reticle is completed, the reticle holder holds and holds the reticle 1, and the flatness (position in the height direction) after holding and holding the reticle is measured by the measurement sensors 12a and 12b. (Step 3). Based on the signals sent through the measurement sensors 12a and 12b, the measurement unit 7 measures the amount of positional deviation in the height direction of the measurement mark drawn on the reticle 1.

  The measurement unit 7 uses the current position of the reticle stage 2 and the positions of the measurement sensors 12a and 12b as position data, and the positional deviation in the height direction of the reticle 1 measured before and after suction holding as the flatness data. Output two data synchronously. The synchronously output position data and reticle flatness data are sent to the arithmetic processing unit 8 and stored as needed as flatness data before and after holding the reticle, which is the first measurement mark data. In this way, when the measurement of flatness before and after suction holding is completed at each measurement mark position, the arithmetic processing unit 8 stores the flatness data as reticle whole surface data before and after suction holding.

  As a result of the above measurement, two data, that is, data before suction holding and data after suction holding, are stored in the arithmetic processing unit 8, and the arithmetic processing unit 8 adds arithmetic processing to the two data to obtain data. Process. In the case of the first embodiment, the difference between the data before suction holding and the data after suction holding is obtained, and this difference is used as the reticle flatness difference (steps 4 and 5). Steps 2 to 4 are repeated at each image height.

  The result of the data processing and the distortion change of the projected image through the projection lens 5 of the semiconductor manufacturing apparatus are closely related, and the distortion change of the projected image can be predicted from the result of the arithmetic processing described above. If it is predicted from these data processing results that distortion will occur during exposure of actual elements and overlay accuracy will deteriorate due to distortion, this semiconductor manufacturing equipment aims to reversely correct the generated distortion, Distortion correction is performed by driving some lenses of the projection optical system in the apparatus or by driving the reticle stage 2 and the wafer stage 10. In the semiconductor manufacturing apparatus according to the second embodiment, a part of the optical elements of the projection lens 5 is moved to perform the main correction (step 6).

  After the distortion correction based on the above calculation result is performed by the projection lens 5, the semiconductor manufacturing apparatus carries the wafer 3 onto the wafer stage 10 in the semiconductor manufacturing apparatus in order to perform the exposure operation, and starts the exposure operation (step). 7). Note that the flatness of the reticle 1 is deformed during suction holding. That is, the flatness (position in the height direction) measurement only needs to be performed at the timing of exchanging the reticle 1, and need not be performed during the subsequent exposure operation.

Next, an embodiment of a device production method using the semiconductor manufacturing apparatus described above will be described.
FIG. 4 shows a flow of manufacturing a microdevice (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micromachine, etc.). In step 1 (circuit design), a device pattern is designed. In step 2 (mask production), a mask on which the designed pattern is formed is produced. On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon or glass. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. The next step 5 (assembly) is referred to as a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, such as an assembly process (dicing, bonding), a packaging process (chip encapsulation), and the like. including. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, the semiconductor device is completed and shipped (step 7).
FIG. 5 shows a detailed flow of the wafer process. In step 11 (oxidation), the wafer surface is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist process), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern of the mask is printed onto the wafer by a semiconductor manufacturing apparatus which is one of the device manufacturing apparatuses described above. In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.
By using the production method of this embodiment, a highly integrated device that has been difficult to manufacture can be manufactured at low cost.

It is the figure around the reticle stage of the semiconductor manufacturing apparatus which shows Example 1 and Example 2 of this invention. It is a figure which shows the flow of Example 1 of this invention. It is a figure which shows the flow of Example 2 of this invention. It is a figure which shows the flow of manufacture of a microdevice. It is a figure which shows the detailed flow of the wafer process in FIG. It is a figure which shows the deformation | transformation state of the reticle by adsorption | suction. It is the figure around the reticle stage of the semiconductor manufacturing apparatus which shows Example 3 of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Reticle 2 Reticle stage 4a, 4b Measurement sensor 5 Projection lens 6 Illumination system lens 7 Measurement part 8 Arithmetic processing part 9 Compensation part 10 Wafer stage 11 Control part 12a, 12b Measurement sensor

Claims (9)

  In a semiconductor manufacturing apparatus having a holding mechanism for holding a reticle, measuring means for measuring the position of a mark drawn on the reticle, and the holding means before and after holding the reticle by the holding mechanism. A semiconductor manufacturing apparatus, comprising: means for measuring a position of a mark on the subsequent reticle and processing the measured data.   2. The semiconductor manufacturing apparatus according to claim 1, wherein means for processing the data is connected to means for calculating a difference value between mark positions before and after holding the reticle.   3. The semiconductor manufacturing apparatus according to claim 1, further comprising means for calculating a positional deviation of the mark on the reticle due to reticle deformation from the calculated difference value.   4. The semiconductor manufacturing apparatus according to claim 1, wherein means for correcting a deviation is provided in the projection optical system so that the amount of positional deviation is minimized.   In a semiconductor manufacturing apparatus having a holding mechanism for holding a reticle, measuring means for measuring the flatness of the reticle, and the reticle before and after holding the reticle by the holding mechanism by the measuring means. A semiconductor manufacturing apparatus comprising: means for measuring flatness and processing the measured data.   6. The semiconductor manufacturing apparatus according to claim 5, wherein means for processing the data is connected to means for calculating a difference value of the flatness and means for determining a deformation amount of the reticle from the calculated value of the difference value.   7. The semiconductor manufacturing apparatus according to claim 5, further comprising means for calculating a positional deviation of the mark on the reticle due to the deformation of the reticle from the deformation amount.   8. The semiconductor manufacturing apparatus according to claim 5, wherein means for correcting a deviation is provided in the projection optical system so that the positional deviation is minimized.   A device manufacturing method, wherein a device is manufactured using the semiconductor manufacturing apparatus according to claim 1.

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