JPH02303015A - Composite functional element - Google Patents
Composite functional elementInfo
- Publication number
- JPH02303015A JPH02303015A JP1125372A JP12537289A JPH02303015A JP H02303015 A JPH02303015 A JP H02303015A JP 1125372 A JP1125372 A JP 1125372A JP 12537289 A JP12537289 A JP 12537289A JP H02303015 A JPH02303015 A JP H02303015A
- Authority
- JP
- Japan
- Prior art keywords
- hours
- rare earth
- vinyl acetate
- functional element
- tio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002131 composite material Substances 0.000 title abstract 2
- 239000000203 mixture Substances 0.000 claims abstract description 6
- 229910052738 indium Inorganic materials 0.000 claims abstract description 5
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 4
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000005245 sintering Methods 0.000 claims 1
- 229910002370 SrTiO3 Inorganic materials 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 4
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 239000011347 resin Substances 0.000 abstract description 4
- 229920005989 resin Polymers 0.000 abstract description 4
- 229910052709 silver Inorganic materials 0.000 abstract description 4
- 239000004332 silver Substances 0.000 abstract description 4
- 239000008188 pellet Substances 0.000 abstract description 3
- 238000001035 drying Methods 0.000 abstract description 2
- 239000000843 powder Substances 0.000 abstract description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 abstract description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 abstract 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 abstract 2
- 229910019714 Nb2O3 Inorganic materials 0.000 abstract 1
- -1 SeCO3 Chemical compound 0.000 abstract 1
- 229910000019 calcium carbonate Inorganic materials 0.000 abstract 1
- 235000010216 calcium carbonate Nutrition 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 238000005452 bending Methods 0.000 description 6
- 230000005611 electricity Effects 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 230000006378 damage Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910010252 TiO3 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
この発明は複合機能素子に関し、特にたとえばパーソナ
ルコンピュータやマイクロコンピュータの誤動作などの
原因となるノイズを吸収するためのバリスタ特性とコン
デンサ特性とを合わせ持つ、複合機能素子に関する。[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to a multi-functional device, in particular a combination of varistor characteristics and capacitor characteristics for absorbing noise that causes malfunctions in personal computers and microcomputers. It relates to a multi-functional device that has.
(従来技術)
従来、ノイズ特にトランジェントノイズを吸収する部品
として、バリスタが使用されてきた。特に、ZnOを主
体とするバリスタは、電圧抑制効果が高く、ノイズ吸収
用バリスタの主流となっている。しかしながら、このよ
うなZnOを主体としたバリスタは応答速度が遅べ、ま
た静電気などのような高電圧が印加されると破壊されや
すい。(Prior Art) Varistors have conventionally been used as components that absorb noise, particularly transient noise. In particular, varistors mainly made of ZnO have a high voltage suppression effect and have become the mainstream of noise absorbing varistors. However, such a varistor mainly made of ZnO has a slow response speed and is easily destroyed when a high voltage such as static electricity is applied.
このような欠点を補うために、5rTiOsを主体とし
たバリスタが考え出された。5rTiOs系バリスタは
静電容量が大きくコンデンサ特性も有するため、複合機
能素子として働く、また、5rTto、系の複合機能素
子は、静電気などのような°高電圧が印加されても破壊
きれにくい。このような複合機能素子は、SrTiO3
に添加物を加え、還元雰囲気下において焼成することに
より素体を半導体化し、さらに熱処理によって粒界を酸
化して高抵抗化することにより、バリスタ特性を得てい
る。In order to compensate for these drawbacks, a varistor mainly made of 5rTiOs was devised. Since the 5rTiOs-based varistor has a large capacitance and has capacitor characteristics, it works as a multi-functional element.Furthermore, the 5rTiOs-based multi-functional element is difficult to break down even when high voltages such as static electricity are applied. Such a multifunctional device is SrTiO3
The varistor properties are obtained by adding additives to the material and firing it in a reducing atmosphere to make the element into a semiconductor, and then heat-treating the material to oxidize the grain boundaries and increase the resistance.
(発明が解決しようとする課題)
しかしながら、このようなSrTiO3系の複合機能素
子では、熱処理を何回も行うために製造コストが上がり
、また還元雰囲気下で焼成するため素子内部に空孔が発
生しやすい、このような場合、高エネルギのパルスが素
子内を流れると、実質的に電流密度が上がり、かつ熱エ
ネルギが空孔に溜まって素子が破壊されやすくなる。ま
た、素子内の空孔を減少させると、酸素が供給されにく
くなって粒界の酸化が進みにくくなり、粒界の高抵抗層
にばらつきが生じて破壊が進みやすい。(Problems to be Solved by the Invention) However, in such SrTiO3-based multifunctional devices, the manufacturing cost increases because heat treatment is performed many times, and pores are generated inside the device because it is fired in a reducing atmosphere. In such cases, when a high-energy pulse flows through the device, the current density substantially increases, and thermal energy accumulates in the pores, making the device susceptible to destruction. Furthermore, when the number of vacancies in the element is reduced, it becomes difficult for oxygen to be supplied, making it difficult for grain boundary oxidation to proceed, causing variations in the high-resistance layer at the grain boundaries, and facilitating destruction.
それゆえに、この発明の主たる目的は、低コストで、Z
nO系バリスタに比べて静電気などによって破壊されに
くく、5rTiCh系素子に比べて高エネルギのパルス
などによって破壊されにく 。Therefore, the main objective of this invention is to provide Z
Compared to nO-based varistors, they are less likely to be destroyed by static electricity, and compared to 5rTiCh-based elements, they are less likely to be destroyed by high-energy pulses.
く、かつ抗折強度の大きい複合機能素子を提供すること
である。It is an object of the present invention to provide a multi-functional element which is flexible and has a high bending strength.
(課題を解決するための手段)
この発明は、Nb、W、Ta、Inおよび希土類元素の
中から選ばれる少なくとも1種類の元素を含むT i
Oを系またはSrTiO3、系のペロプスカイト組成物
を酸化雰囲気中で焼結した、複合機能素子である。(Means for Solving the Problems) The present invention provides Ti containing at least one element selected from Nb, W, Ta, In, and rare earth elements.
This is a multifunctional device in which an O-based or SrTiO3-based perovskite composition is sintered in an oxidizing atmosphere.
(発明の効果)
この発明によれば、高エネルギのパルスおよび静電気の
いずれに対しても破壊されにくい複合機能素子を得るこ
とができる。また、従来のZnO系バリスタや3rTi
Ch系素子に比べて、抗折強度の大きい複合機能素子を
得ることができる。(Effects of the Invention) According to the present invention, it is possible to obtain a multifunctional device that is difficult to be destroyed by both high-energy pulses and static electricity. In addition, conventional ZnO-based varistors and 3rTi
It is possible to obtain a multi-functional device with a higher bending strength than a Ch-based device.
さらに、この発明の複合機能素子は1回の焼成で形成す
ることができるため、SrTiO3系素子に比べて製造
コストを下げることができる。Furthermore, since the multifunctional device of the present invention can be formed by one firing, manufacturing costs can be lowered compared to SrTiO3-based devices.
この発明の上述の目的、その他の目的、特徴および利点
は、以下の実施例の詳細な説明から一層明らかとなろう
。The above objects, other objects, features and advantages of the present invention will become more apparent from the detailed description of the following embodiments.
(実施例)
まず、表1および表2に示す組成となるように、Ti1
t 、5rCO:+ 、BaC0,、、CaC0=、N
b、03.Ta、W、Inおよび希土類酸化物を配合し
、湿式混合した。この混合物を乾燥後、1200℃で2
時間仮焼し粉砕した。この粉砕物に酢酸ビニル系樹脂を
5重量%添加して造粒し、この造粒粉を3 ton/
calの圧力で直径10mm、厚さ1.2mmのベレッ
ト状に成形した。(Example) First, Ti1
t,5rCO:+,BaC0,,,CaC0=,N
b, 03. Ta, W, In and rare earth oxides were blended and wet mixed. After drying this mixture, it was heated to 1200℃ for 2 hours.
It was calcined for a time and ground. This pulverized product was granulated by adding 5% by weight of vinyl acetate resin, and the granulated powder was added at a rate of 3 tons/
It was molded into a pellet shape with a diameter of 10 mm and a thickness of 1.2 mm under a pressure of cal.
この成形体を空気中において1400℃または1500
℃のいずれかの温度でそれぞれ2時間焼成した。これら
の成形体を焼成するために温度を上昇させるときに、5
00℃で2時間保持し、酢酸ビニル系樹脂を分解させた
。この焼結体の対向面に直径7mの銀電極を形成し、電
気特性および抗折強度を測定した。This molded body was heated to 1400°C or 1500°C in air.
Each sample was fired for 2 hours at either temperature. When raising the temperature to fire these molded bodies, 5
The temperature was maintained at 00°C for 2 hours to decompose the vinyl acetate resin. A silver electrode with a diameter of 7 m was formed on the opposing surface of this sintered body, and the electrical properties and bending strength were measured.
この複合機能素子と比較するために、5rTi03系素
子として、S r@、s Cao、z N ba、oo
sT i 、、。。。01組成物を直径lO龍、厚さ1
.2龍のベレット状に成形し、還元雰囲気下において1
400℃で3時間焼成し、Naを1100℃で2時間拡
散した後銀電極を形成したものを準備した。In order to compare with this multifunctional device, S r@, s Cao, z N ba, oo are used as 5rTi03-based devices.
sT i,. . . 01 composition, diameter lOlong, thickness 1
.. Formed into a double pellet shape and heated to 1 in a reducing atmosphere.
After baking at 400° C. for 3 hours and diffusing Na at 1100° C. for 2 hours, a silver electrode was prepared.
また、ZnO系バリスタとして、Zn097゜5モル%
、Blz 030.5モル%、5bto30.5モル%
、 Cr、O,0,5モル%、C070,0,5モル%
、 M n COa 015モル%の組成物を直径Lo
w、厚さ1.2mmに成形し、空気中において1200
℃で2時間焼成し、銀電極を形成したものを準備した。In addition, as a ZnO-based varistor, Zn097゜5 mol%
, Blz 030.5 mol%, 5bto30.5 mol%
, Cr, O, 0.5 mol%, C070, 0.5 mol%
, M n COa 0 15 mol % composition with diameter Lo
w, molded to a thickness of 1.2 mm, and heated at 1200 °C in air.
℃ for 2 hours to prepare a silver electrode.
これらのサンプルについて、バリスタ電圧Vl111.
非直線係数α、静電容量Cを測定した。For these samples, the varistor voltage Vl111.
The nonlinear coefficient α and the capacitance C were measured.
バリスタ電圧V、、Aは、す・ンプルに1mAの電流を
流したときの両端電圧を測定した。The varistor voltage V, A was measured as the voltage across the varistor when a current of 1 mA was passed through the sample.
静電容量は、周波数1kHz、0.IVr□の電圧を印
加してブリッジで測定した。The capacitance is measured at a frequency of 1 kHz and 0. A voltage of IVr□ was applied and measurements were taken with a bridge.
非直線係数αは、サンプルに1mAの電流および10m
Aの電流を流し、その出力電圧を測定して、I = (
V/C) &から算出した。The nonlinear coefficient α is determined by applying a current of 1 mA to the sample and 10 m
Flow a current of A, measure the output voltage, and get I = (
V/C) Calculated from &.
さらに、これらのサンプルに直径0.6mmの錫めっき
銅線を4×6はんだで接続し、エネルギlOJとなるよ
うに波頭長2 m5ecの矩形波パルスを15秒間隔で
2回印加した。そして、高エネルギパルス印加後のバリ
スタ電圧変化率ΔV1.Aおよび非直線係数変化率Δα
を測定した。Further, tin-plated copper wires with a diameter of 0.6 mm were connected to these samples with 4×6 solder, and a rectangular wave pulse with a wavefront length of 2 m5 ec was applied twice at an interval of 15 seconds so that the energy was 1 OJ. Then, the varistor voltage change rate ΔV1. after application of high energy pulse. A and nonlinear coefficient change rate Δα
was measured.
また、静電気試験として、2oopr;’のコンデンサ
に15kVの電圧を充電し、これを放電抵抗なしでサン
プルに5回印加した。そして、この静電気パルス印加後
のバリスタ電圧変化率Δv1.Aおよび非直線係数変化
率Δαを測定した。Further, as an electrostatic test, a 2oopr;' capacitor was charged with a voltage of 15 kV, and this was applied to the sample five times without a discharge resistor. Then, the varistor voltage change rate Δv1. after application of this electrostatic pulse. A and the nonlinear coefficient change rate Δα were measured.
また、試料番号5,12.16.18.21および22
のサンプルについて、抗折強度を測定した。その結果、
各サンプルの抗折強度は次のとおりであった。Also, sample numbers 5, 12.16, 18.21 and 22
The bending strength was measured for the sample. the result,
The bending strength of each sample was as follows.
試料番号 5 .8.4kg
試料番号12 8.3kg
試料番号16 8.8kg
試料番号18 9.2kg
試料番号21 5.6kg
試料番号22 6.3kg
このように、この発明の複合機能素子では、従来の素子
に比べて大きな抗折強度を得ることができる。Sample number 5. 8.4 kg Sample No. 12 8.3 kg Sample No. 16 8.8 kg Sample No. 18 9.2 kg Sample No. 21 5.6 kg Sample No. 22 6.3 kg As described above, the multifunctional device of the present invention has a lower weight than the conventional device. It is possible to obtain large bending strength.
また、表1および表2かられかるように、ZnO系バリ
スタに比べて、高エネルギのパルスおよび静電気のパル
スのいずれによっても、電気特性の変化しにくい複合機
能素子を得ることができる。Further, as can be seen from Tables 1 and 2, it is possible to obtain a multifunctional element whose electrical characteristics are less likely to change due to both high-energy pulses and electrostatic pulses, compared to ZnO-based varistors.
さらに、S r T i Os系素子に比べて、高エネ
ルギのパルスに対して電気特性の変化しにくい複合機能
素子を得ることができる。Furthermore, it is possible to obtain a multi-functional element whose electrical characteristics are less susceptible to changes in response to high-energy pulses than S r Ti Os-based elements.
また、従来の素子に比べて、静電気のパルスや高エネル
ギのパルスによって破壊されにくい複合機能素子を得る
ことができる。Furthermore, it is possible to obtain a multifunctional device that is less likely to be destroyed by electrostatic pulses or high-energy pulses than conventional devices.
さらに、この複合機能素子は、1回の焼成によって形成
することができるため、数回の熱処理を必要とするSr
TiO3系素子に比べて、製造コストを下げることがで
きる。Furthermore, since this multifunctional device can be formed by one firing, Sr.
Manufacturing costs can be lowered compared to TiO3-based elements.
Claims (1)
る少なくとも1種類の元素を含むTiO_2系またはS
rTiO_3系のペロブスカイト組成物を酸化雰囲気中
で焼結した、複合機能素子。TiO_2-based or S containing at least one element selected from Nb, W, Ta, In and rare earth elements
A multifunctional device made by sintering an rTiO_3-based perovskite composition in an oxidizing atmosphere.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1125372A JPH02303015A (en) | 1989-05-17 | 1989-05-17 | Composite functional element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1125372A JPH02303015A (en) | 1989-05-17 | 1989-05-17 | Composite functional element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02303015A true JPH02303015A (en) | 1990-12-17 |
Family
ID=14908503
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1125372A Pending JPH02303015A (en) | 1989-05-17 | 1989-05-17 | Composite functional element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02303015A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5635436A (en) * | 1995-07-21 | 1997-06-03 | Tdk Corporation | Voltage-dependent nonlinear resistor ceramics |
-
1989
- 1989-05-17 JP JP1125372A patent/JPH02303015A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5635436A (en) * | 1995-07-21 | 1997-06-03 | Tdk Corporation | Voltage-dependent nonlinear resistor ceramics |
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