JPH02302731A - Liquid crystal display device - Google Patents
Liquid crystal display deviceInfo
- Publication number
- JPH02302731A JPH02302731A JP12472689A JP12472689A JPH02302731A JP H02302731 A JPH02302731 A JP H02302731A JP 12472689 A JP12472689 A JP 12472689A JP 12472689 A JP12472689 A JP 12472689A JP H02302731 A JPH02302731 A JP H02302731A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- conductor
- liquid crystal
- display device
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 26
- 239000004020 conductor Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 17
- 239000000956 alloy Substances 0.000 claims abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 abstract description 12
- 239000000203 mixture Substances 0.000 abstract description 2
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 description 8
- 239000011651 chromium Substances 0.000 description 6
- 239000000565 sealant Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、ディスプレイやライトバルブに用いる液晶表
示装置の構造に関し、詳しくは対向する電極間の導電性
を高める上下導通構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to the structure of a liquid crystal display device used in a display or a light valve, and more particularly to a vertical conduction structure that increases the conductivity between opposing electrodes.
[従来技術]
上下導通構造の従来の技術をアクティブマトリクス型液
晶表示装置を例にとり説明する。第3図は従来方式の液
晶表示装置の部分的な概略断面図である。第一電極30
2の形成されたアクティブマトリクス基板301と第二
型1304の形成された対向基板303をシール剤30
5で貼合わせ、中間に液晶層306を封入している。第
一電極と第二電極は導電体307で導通され、対向電極
である第二電極を第一電極より端子308で外部回路に
取り出している。導電体の材質は導電ペーストである。[Prior Art] The conventional technology of the vertical conduction structure will be explained by taking an active matrix type liquid crystal display device as an example. FIG. 3 is a partial schematic sectional view of a conventional liquid crystal display device. First electrode 30
The active matrix substrate 301 on which the second mold 1304 is formed and the counter substrate 303 on which the second mold 1304 is formed are coated with a sealant 30.
5, and a liquid crystal layer 306 is enclosed in the middle. The first electrode and the second electrode are electrically connected through a conductor 307, and the second electrode, which is a counter electrode, is taken out from the first electrode to an external circuit through a terminal 308. The material of the conductor is conductive paste.
また第二電極は透明なインジウム・ティン・オキサイド
(ITO)薄膜よりなり、第一電極はクロム(Cr)薄
膜よりなる。Further, the second electrode is made of a transparent indium tin oxide (ITO) thin film, and the first electrode is made of a chromium (Cr) thin film.
[発明が解決しようとする課題]
しかし、前述の従来技術においては次に列記す゛るよう
ないくつかの問題点があった。すなわち、(1)導電体
である導電ペーストの比抵抗が大きく、端子と第二電極
の間の抵抗が大きくなり第二電極に伝わる信号に遅れが
生じ、画質を劣化する原因となっていた。[Problems to be Solved by the Invention] However, the above-mentioned prior art had several problems as listed below. That is, (1) the specific resistance of the conductive paste, which is a conductor, is large, and the resistance between the terminal and the second electrode is large, causing a delay in the signal transmitted to the second electrode, which causes deterioration of image quality.
(2)第一電極あるいは第二電極の表面に酸化膜が形成
され易く、その結果、導電体とのコンタクト抵抗が大き
くなり、前述同様画質を低下させていた。(2) An oxide film is likely to be formed on the surface of the first electrode or the second electrode, and as a result, the contact resistance with the conductor increases, resulting in the deterioration of image quality as described above.
(3)導電体に用いる導電ペーストと第一電極あるいは
第二電極との接着性が悪く、湿度試験などにおいてはが
れが生じ、導通不良となる欠陥が生じた。(3) Adhesion between the conductive paste used for the conductor and the first electrode or the second electrode was poor, resulting in peeling during humidity tests and other defects, resulting in poor conductivity.
などである。etc.
そこで本発明は、このような従来技術の問題点を解決す
るためのもので、その目的とするところは、低抵抗で信
頼性の高い上下導通構造を有する液晶表示装置を提供丈
るところにある。Therefore, the present invention has been made to solve the problems of the prior art, and its purpose is to provide a liquid crystal display device having a low resistance and highly reliable vertical conduction structure. .
[課題を解決するための手段]
本発明の液晶表示装置は、第一電極を有する第一基板と
、前記第一電極に対向する第二電極を有する第二基板と
、前記基板電極と前記第二基板の中間に形成された液晶
層と、前記第一電極と前記第二電極の中間に形成され、
前記第一電極と前記第二電極を導通する導電体とを少な
くも構成要素とする液晶表示装置において、前記導電体
は低融点合金からなることを特徴とし、
さらに、前記低融点合金の成分にインジウムとガリウム
とアルミニウムの少なくも一成分を含み、前記第一電極
と前記第二電極の成分に少なくもアルミニウムを含むこ
とを特徴とする。[Means for Solving the Problems] A liquid crystal display device of the present invention includes a first substrate having a first electrode, a second substrate having a second electrode opposite to the first electrode, and a second substrate having a second electrode opposite to the first electrode. a liquid crystal layer formed between the two substrates, and a liquid crystal layer formed between the first electrode and the second electrode,
A liquid crystal display device having at least a component of a conductor that connects the first electrode and the second electrode, wherein the conductor is made of a low melting point alloy; It is characterized in that it contains at least one component of indium, gallium, and aluminum, and the first electrode and the second electrode contain at least aluminum.
[実施例1] 本発明を実施例に従いさらに詳述する。[Example 1] The present invention will be further described in detail according to examples.
第1図は本発明の第一の実施例を説明するための液晶表
示装置の部分的な概略断面図である。アクティブマトリ
クス基板101と対向基板103をシール剤105では
りあわせ、その中間に液晶層106を形成している。第
一電極102はアクティブマトリクス基板101表面の
一部に形成され、第二電極104は対向基板103の全
表面に形成され、互いの中間に導電体107が形成され
ている。第一電極から外部駆動回路へ端子108により
接続されている。アクティブ素子は薄膜トランジスタ(
TPT)である。FIG. 1 is a partial schematic sectional view of a liquid crystal display device for explaining a first embodiment of the present invention. An active matrix substrate 101 and a counter substrate 103 are laminated together with a sealant 105, and a liquid crystal layer 106 is formed between them. The first electrode 102 is formed on a part of the surface of the active matrix substrate 101, the second electrode 104 is formed on the entire surface of the counter substrate 103, and a conductor 107 is formed between them. A terminal 108 connects the first electrode to an external drive circuit. The active element is a thin film transistor (
TPT).
第一電極102は厚さ0.8μmのAll膜よりなり、
第二電極104は厚さ0.8μmのAl薄膜より成る。The first electrode 102 is made of an All film with a thickness of 0.8 μm,
The second electrode 104 is made of an Al thin film with a thickness of 0.8 μm.
導電体107は断面積的1mm2で高さ約4μmのIn
(23wt、 %)・Ga(5,7wt、 %)−
AI (20wt、 %)合金である。合金は第一電
極および第二電極の中へ侵入し、電極との界面は合金の
組成が徐々に変化している。The conductor 107 is made of In with a cross-sectional area of 1 mm2 and a height of about 4 μm.
(23wt, %)・Ga(5,7wt, %)-
AI (20wt, %) alloy. The alloy penetrates into the first electrode and the second electrode, and the composition of the alloy gradually changes at the interface with the electrodes.
ここに示した液晶表示装置の製作手順を簡単に説明する
。まず、シール剤の形成されたアクティブマトリクス基
板の第一電極上に、In(28wt0%)・Ga(72
wt、 %)合金を30℃で4X10−’cm3程度
の量を塗布する。つぎに対向基板を7ライメント、圧着
し、80°C以上に加熱してシール剤を固化する。この
加熱により導電体中に第一電極および第二電極のAlが
溶融する。The manufacturing procedure of the liquid crystal display device shown here will be briefly explained. First, on the first electrode of the active matrix substrate on which the sealant was formed, In(28wt0%)・Ga(72wt0%)
wt, %) alloy at 30°C in an amount of about 4 x 10-'cm3. Next, the opposing substrate is pressure-bonded with 7 lines and heated to 80° C. or higher to solidify the sealant. This heating melts Al of the first electrode and the second electrode into the conductor.
最後に温度を室温まで降下させて合金を固化させる。こ
の工程に従って導電体を形成すると、初期のIn−Ga
合金は30°CR後で液体であるので従来の銀ペースト
を塗布する工程が適用でき、しかも第一電極あるいは第
二電極のA1表面に絶縁性のアルミナ薄膜が存在しても
、In−Ga合金はA1giJI!中に溶けこむため、
絶縁膜の存在によるコンタクト不良を回避できる。また
In−Ga・A1合金は比抵抗がA1程度であり導電体
の抵抗は電極とのコンタクト抵抗まで含めて1Ω以下で
あった。Finally, the temperature is lowered to room temperature to solidify the alloy. When a conductor is formed according to this process, the initial In-Ga
Since the alloy is liquid after 30°CR, the conventional process of applying silver paste can be applied, and even if there is an insulating alumina thin film on the A1 surface of the first or second electrode, the In-Ga alloy is A1giJI! To blend in,
Contact failure due to the presence of the insulating film can be avoided. Further, the specific resistance of the In-Ga.A1 alloy was about A1, and the resistance of the conductor including the contact resistance with the electrode was 1Ω or less.
[実施例2]
第2図は本発明の第二の実施例を説明するための液晶表
示装置の部分的な概略断面図である。本 、実施例は対
向基板の電極に透明なITO薄膜を用いたもので、IT
OとA1薄膜の間ζこCr薄膜を形成したものである。[Embodiment 2] FIG. 2 is a partial schematic sectional view of a liquid crystal display device for explaining a second embodiment of the present invention. In this example, a transparent ITO thin film was used for the electrode of the counter substrate, and the IT
A Cr thin film is formed between the O and A1 thin films.
ITOとAlはコンタクト抵抗が非常に大きくなるので
、中間にCrを挟みコンタクト抵抗を低減している。ほ
かの構造については実施例1で述べたものと同様である
。すなわち、アクティブマトリクス基板201と対向基
板203をシール剤205ではりあわせ、その中間に液
晶層206を形成している。A1よりなる第一電極20
2はアクティブマトリクス基板201表面の一部に形成
され、透明なITOよりなる第二電極204は対向電極
203の全表面に形成され、第一電極近傍の第二電極上
にCr層209及びA1電極210が積層され、第一電
極202およびAI電極210の中間に導電体207が
形成されている。第一電極から外部駆動回路へ端子20
8により接続されている。本実施例の場合も第一電極と
第二電極との間の上下導通抵抗は1Ω以下であった。Since ITO and Al have very high contact resistance, Cr is sandwiched between them to reduce the contact resistance. The other structures are the same as those described in the first embodiment. That is, an active matrix substrate 201 and a counter substrate 203 are laminated together with a sealant 205, and a liquid crystal layer 206 is formed between them. First electrode 20 made of A1
2 is formed on a part of the surface of the active matrix substrate 201, a second electrode 204 made of transparent ITO is formed on the entire surface of the counter electrode 203, and a Cr layer 209 and an A1 electrode are formed on the second electrode near the first electrode. 210 are stacked, and a conductor 207 is formed between the first electrode 202 and the AI electrode 210. Terminal 20 from the first electrode to the external drive circuit
8. In this example as well, the vertical conduction resistance between the first electrode and the second electrode was 1Ω or less.
本実施例ではアクティブマトリクス型液晶表示装置につ
いて述べたが、本発明は単純マトリクス型液晶表示装置
などにも適用できる。また、導電体に用いる合金はIn
−Ga−Al系だけでなくGaを含みIn、AI以外の
金属を含む合金等も本発明に適用可能である。In this embodiment, an active matrix type liquid crystal display device has been described, but the present invention can also be applied to a simple matrix type liquid crystal display device. In addition, the alloy used for the conductor is In
Not only -Ga-Al alloys but also alloys containing Ga and metals other than In and AI are applicable to the present invention.
[発明の効果]
本発明の液晶表示装置は次に列記するような格別な発明
の効果を有する。[Effects of the Invention] The liquid crystal display device of the present invention has the following special effects of the invention.
(1)導電体の材料が比抵抗の非常に小さな金属である
ため、導電体の抵抗が小さく、また電極と導電体の界面
に自然酸化膜が存在しても、導電体と電極は互いに自己
侵食を起こし、完全なオーミック接続が得られ低抵抗と
なる。これらの結果、上下導通部の低抵抗化が計られ対
向電極への信号の書き込み時間が短縮され、忠実な画像
が得られる。(1) Since the material of the conductor is a metal with very low specific resistance, the resistance of the conductor is low, and even if there is a natural oxide film at the interface between the electrode and the conductor, the conductor and the electrode are mutually self-contained. Erosion occurs, resulting in a perfect ohmic connection and low resistance. As a result, the resistance of the upper and lower conductive parts is reduced, the time required to write signals to the counter electrode is shortened, and a faithful image can be obtained.
(2)導電体は機械的強度を保って固化するためはがれ
が生じず、信頼性の高い上下導通が得られる。(2) Since the conductor solidifies while maintaining its mechanical strength, no peeling occurs and highly reliable vertical conduction can be obtained.
第1図は本発明の第一の実施例を説明するための液晶表
示装置の部分的な概略断面図である。
第2図は本発明の第二の実施例を説明するための液晶表
示装置の部分的な概略断面図である。
第3図は従来方式の液晶表示装置の部分的な概略断面図
である。
101.201.301・・・アクティブマトリクス基
板
102.202.302・・・第一電極103.203
.303・・・対向基板104.204.304・・・
第二電極105.205.305・・・シール剤106
.206.30G・・・液晶層
107.207.307・・・導電体
108.208.308・・・端子
209・・・Cr層
210・・・A1電極
以上
第3図FIG. 1 is a partial schematic sectional view of a liquid crystal display device for explaining a first embodiment of the present invention. FIG. 2 is a partial schematic sectional view of a liquid crystal display device for explaining a second embodiment of the present invention. FIG. 3 is a partial schematic sectional view of a conventional liquid crystal display device. 101.201.301... Active matrix substrate 102.202.302... First electrode 103.203
.. 303... Counter substrate 104.204.304...
Second electrode 105.205.305...Sealant 106
.. 206.30G...Liquid crystal layer 107.207.307...Conductor 108.208.308...Terminal 209...Cr layer 210...A1 electrode or above Fig. 3
Claims (2)
向する第二電極を有する第二基板と、前記第一基板と前
記第二基板の中間に形成された液晶層と、前記第一電極
と前記第二電極の中間に形成され、前記第一電極と前記
第二電極を導通する導電体とを少なくも構成要素とする
液晶表示装置において、前記導電体は低融点合金からな
ることを特徴とする液晶表示装置。(1) a first substrate having a first electrode; a second substrate having a second electrode facing the first electrode; a liquid crystal layer formed between the first substrate and the second substrate; In a liquid crystal display device that includes at least a component of a conductor formed between a first electrode and the second electrode and conducting the first electrode and the second electrode, the conductor is made of a low melting point alloy. A liquid crystal display device characterized by:
アルミニウムの少なくも一成分を含み、前記第一電極と
前記第二電極の成分に少なくもアルミニウムを含むこと
を特徴とする請求項1記載の液晶表示装置。(2) The low melting point alloy includes at least one of indium, gallium, and aluminum, and the first electrode and the second electrode include at least aluminum. LCD display device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12472689A JPH02302731A (en) | 1989-05-18 | 1989-05-18 | Liquid crystal display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12472689A JPH02302731A (en) | 1989-05-18 | 1989-05-18 | Liquid crystal display device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02302731A true JPH02302731A (en) | 1990-12-14 |
Family
ID=14892586
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12472689A Pending JPH02302731A (en) | 1989-05-18 | 1989-05-18 | Liquid crystal display device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02302731A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001109010A (en) * | 1999-10-06 | 2001-04-20 | Seiko Epson Corp | Electro-optic device, method for manufacturing electro- optic device and electronic apparatus |
JP2001125498A (en) * | 1999-08-23 | 2001-05-11 | Agilent Technol Inc | Display device |
-
1989
- 1989-05-18 JP JP12472689A patent/JPH02302731A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001125498A (en) * | 1999-08-23 | 2001-05-11 | Agilent Technol Inc | Display device |
JP2001109010A (en) * | 1999-10-06 | 2001-04-20 | Seiko Epson Corp | Electro-optic device, method for manufacturing electro- optic device and electronic apparatus |
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