JPS61183152A - Glass substrate - Google Patents

Glass substrate

Info

Publication number
JPS61183152A
JPS61183152A JP2089585A JP2089585A JPS61183152A JP S61183152 A JPS61183152 A JP S61183152A JP 2089585 A JP2089585 A JP 2089585A JP 2089585 A JP2089585 A JP 2089585A JP S61183152 A JPS61183152 A JP S61183152A
Authority
JP
Japan
Prior art keywords
glass substrate
conductor pattern
dielectric layer
glass
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2089585A
Other languages
Japanese (ja)
Other versions
JPH0261428B2 (en
Inventor
Toshio Minowa
俊夫 箕輪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP2089585A priority Critical patent/JPS61183152A/en
Publication of JPS61183152A publication Critical patent/JPS61183152A/en
Publication of JPH0261428B2 publication Critical patent/JPH0261428B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/10165Functional features of the laminated safety glass or glazing
    • B32B17/10174Coatings of a metallic or dielectric material on a constituent layer of glass or polymer
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/10009Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
    • B32B17/10036Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising two outer glass sheets
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/10165Functional features of the laminated safety glass or glazing
    • B32B17/10293Edge features, e.g. inserts or holes

Landscapes

  • Liquid Crystal (AREA)
  • Surface Treatment Of Glass (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)

Abstract

PURPOSE:To obtain a glass substrate having a conductor pattern adhered to a surface with high bonding strength by interposing a dielectric layer contg. Al2O3 dispersed in glass frit between the surface of a glass substrate and a thick filmlike conductor pattern. CONSTITUTION:When a liq. crystal display device is produced by using the glass substrate, an electrode 1 is formed on the surface of the liq. crystal display cell forming part of a glass substrate 2. A dielectric layer 12 is formed on the whole surface of the remaining part of the substrate 2, and a thick filmlike conductor pattern 5 is formed on the layer 12. Powder of one or more kinds of oxides selected among aluminum oxide, beryllium oxide, nickel oxide and silicon oxide, and resulting dielectric paste is applied to the pattern forming part of the substrate 2 and baked to form the dielectric layer 12.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明はガラス基板に係り、特に表面に厚膜状の導体パ
ターンを形成したガラス基板に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a glass substrate, and particularly to a glass substrate having a thick film-like conductor pattern formed on its surface.

[従来の技術] 近年、液晶表示装置やエレクトロクロミンク表示装置あ
るいはエレクトロクロミック物質等を用いた調光窓、調
光鏡、更には蛍光表示管やプラズマディスプレイ等の幅
広い技術分野に於て、表面に膜状の導体パターンを形成
したガラス基板が用いられている。
[Prior Art] In recent years, surface A glass substrate on which a film-like conductor pattern is formed is used.

例えば液晶表示装置に於ては、第2図にその一例の断面
図を示す様に、電極1を形成した二枚のガラス基板2を
対向させて周辺をシール材3で封止しセルを形成し、該
セル中に液晶物質4を注入し、必要に応じて該セルの外
側に該セルを挟むようにして二枚の偏光板(不図示)を
設置し、表示装置として構成してガラス基板2を用いて
いる。この際、前記二枚のガラス基板2の少なくとも一
方をセル外部に延長させ、該延長部分上に導体パターン
5を形成し、ポリイミド等の基板6上に銅箔等から回路
パターン7を形成し例えばフラットパッケージ状のIC
チップ8等を搭載した外部回路基板を、該導体パターン
5上に半田9で半田付けして外部回路から液晶表示装置
に給電する方法が行われている。なお、ガラス基板2と
ポリイミド基板6との半田付部は封止樹脂10により封
止され、ポリイミド基板6上の回路パターン7上には、
半田付tす部を除き、ポリイミド等から成る保護被膜1
1が施され酸化等の防止が計られている。
For example, in a liquid crystal display device, two glass substrates 2 on which electrodes 1 are formed are placed facing each other and the periphery is sealed with a sealing material 3 to form a cell, as shown in a cross-sectional view of an example in FIG. Then, a liquid crystal substance 4 is injected into the cell, and if necessary, two polarizing plates (not shown) are installed on the outside of the cell so as to sandwich the cell, and a display device is configured. I am using it. At this time, at least one of the two glass substrates 2 is extended to the outside of the cell, a conductor pattern 5 is formed on the extended portion, and a circuit pattern 7 is formed from copper foil or the like on a substrate 6 such as polyimide. IC in flat package form
A method is used in which an external circuit board on which chips 8 and the like are mounted is soldered onto the conductor pattern 5 with solder 9 to supply power from the external circuit to the liquid crystal display device. Note that the soldered portion between the glass substrate 2 and the polyimide substrate 6 is sealed with a sealing resin 10, and on the circuit pattern 7 on the polyimide substrate 6,
Protective coating 1 made of polyimide, etc., except for the soldered part
1 is applied to prevent oxidation, etc.

一方、近年高密度の表示画像が要求されるようになり、
この要求に応える為には多数の同体パターン5をガラス
基板2上に形成しなければならず、これに対応してポリ
イミド基板6上の回路パターン7も微細化するようにな
った。この場合に、回路パターン7のパターン幅が例え
ば0.15mmないし0.2+em程度までに微細化し
てくるとポリイミド回路基板6の幅方向の累積誤差が大
きくなり、例えば10cm幅以上程度の基板では累積ピ
ッチ誤差は2004 tx程度となって、導体パターン
5と回路パターン7がズしてしまいガラス基板2とポリ
イミド基板6との電気的接続不良が発生してしまう場合
が−あり1回路パターン7のある程度以上の微細化は不
可能である。
On the other hand, in recent years, there has been a demand for high-density display images.
In order to meet this demand, a large number of uniform patterns 5 must be formed on the glass substrate 2, and in response to this, the circuit patterns 7 on the polyimide substrate 6 have also become finer. In this case, as the pattern width of the circuit pattern 7 becomes finer, for example, to about 0.15 mm to 0.2+em, the cumulative error in the width direction of the polyimide circuit board 6 becomes large. The pitch error is about 2004 tx, and the conductor pattern 5 and the circuit pattern 7 may be misaligned, resulting in poor electrical connection between the glass substrate 2 and the polyimide substrate 6. Further miniaturization is impossible.

また、導体パターン5及び回路パターン7のピッチが微
細化して来ると、ガラス基板2とポリイミド基板6との
接続の際の位置合せが難しくなり、生産工程上で歩留り
が低下しコスト高となるという欠点もある。
In addition, as the pitch of the conductor pattern 5 and the circuit pattern 7 becomes finer, it becomes difficult to align the glass substrate 2 and the polyimide substrate 6 when connecting them, resulting in lower yields and higher costs in the production process. There are also drawbacks.

更に、高密度画面が要求される反面、他方では表示画面
自体の大型化も要求され、液晶パネルが大型化するに伴
い、ポリイミド基板のコストが液晶表示装置全体のコス
トに占める割合が大きくなり、液晶表示装置のコストダ
ウンが難しい原因ともなっている。
Furthermore, while high-density screens are required, on the other hand, the display screens themselves are also required to be larger, and as liquid crystal panels become larger, the cost of polyimide substrates becomes a larger proportion of the overall cost of liquid crystal display devices. This also makes it difficult to reduce the cost of liquid crystal display devices.

このことは、第2図の様にポリイミド基板6をガラス基
板2に直接半田付けする代りに、ゼブラコネクタやビン
コネクタ等の各種コネクタで両基板を接続する場合も事
情は同じであり、表示画面の高密度化に伴い接続端子数
が増加し、信頼性、コスト面で問題となる。
This is the same situation when connecting the two boards with various connectors such as zebra connectors and bin connectors instead of directly soldering the polyimide board 6 to the glass board 2 as shown in Figure 2. As the density increases, the number of connection terminals increases, which poses problems in terms of reliability and cost.

このため、第3図に断面図を示す様に、セル外に延長さ
せたガラス基板2上に導体ツクターン5を形成し、該導
体パターン5にフラットパッケージICやフリップチッ
プ等の駆動用ICチップ8やその他の回路素子を直接半
田9で半田付けし外部電子回路の一部をガラス基板2上
に移設して、外部回路との接続端子数を削減したいわゆ
るチップ・オン・グラス(以下「COG」と略記する)
タイプの液晶表示装置が検討されている。
For this purpose, as shown in the cross-sectional view in FIG. 3, a conductor pattern 5 is formed on the glass substrate 2 extending outside the cell, and a driving IC chip 8 such as a flat package IC or a flip chip is attached to the conductor pattern 5. and other circuit elements are directly soldered using solder 9, and a part of the external electronic circuit is transferred onto the glass substrate 2, thereby reducing the number of connection terminals with the external circuit. )
type of liquid crystal display device is being considered.

[発明の解決しようとする問題点] COGタイプの液晶表示装置のガラス基板上への導体パ
ターンの形成方法としては、第3図に示した様に、電極
1上へ導体パターン5を形成する方法と電極lをセル内
に限定してガラス基板2上に直接導体パターン5を形成
し°セル内の電極lと接続する方法が検討されている。
[Problems to be Solved by the Invention] A method for forming a conductor pattern on a glass substrate of a COG type liquid crystal display device is a method of forming a conductor pattern 5 on an electrode 1 as shown in FIG. A method is being considered in which the conductor pattern 5 is formed directly on the glass substrate 2 with the electrode l limited to the inside of the cell and connected to the electrode l inside the cell.

第1の電極1上へ導体パターン5を形成する方法は、電
極lと導体パターン5との位置合わせが難しく、特に双
方のパターンが微細化して来るとこの困難度は急激に増
加し、生産の妻止りは急激に低下してコストアー2ブの
要因となってしまう、また、液晶表示装置では電極lと
しては通常インジウムΦティン・オキサイド(工To)
が用いられるが、ITOと導体パターン5との接着強度
は、ガラス基板2と導体パターン5との接着強度よりも
弱くこの面でも問題となる。
In the method of forming the conductor pattern 5 on the first electrode 1, it is difficult to align the electrode 1 and the conductor pattern 5. Especially as both patterns become finer, this difficulty increases rapidly, and production The capacitance decreases rapidly, resulting in a cost increase.Also, in liquid crystal display devices, electrodes are usually made of indium Φ tin oxide.
However, the adhesive strength between ITO and the conductor pattern 5 is weaker than the adhesive strength between the glass substrate 2 and the conductor pattern 5, which also poses a problem.

第2のガラス基板2上に直接導体パターン5を形成する
方法には二種類の方法がある。その1は、メッキ法ある
いはスパッタ法、蒸着法等により導体パターン5を薄膜
で形成する方法であり、その2は、導体をペースト状に
してスクリーン印刷等の方法により厚膜で導体パターン
5を形成する方法である。
There are two methods for forming the conductive pattern 5 directly on the second glass substrate 2. The first method is to form the conductor pattern 5 as a thin film using a plating method, sputtering method, vapor deposition method, etc., and the second method is to form the conductor pattern 5 as a thick film using a method such as screen printing with the conductor in the form of a paste. This is the way to do it.

薄膜で導体パターン5を形成した場合には、IC等の回
路部品の装着、取り換え時等に半田ゴテの熱により導体
パターンを形成する金属が溶融して半田中に拡散してし
まい電気的に接触不良状態となるいわゆる半田喰れ現象
が発生し、十分な信頼性が得られないという欠点を有し
ている。
If the conductor pattern 5 is formed of a thin film, the metal forming the conductor pattern will melt and diffuse into the solder due to the heat of the soldering iron when installing or replacing circuit components such as ICs, resulting in electrical contact. This has the drawback that a so-called solder-eating phenomenon, which results in a defective state, occurs, and sufficient reliability cannot be obtained.

そのため、厚膜で導体パターン5を形成するのが望まし
いのであるが、基板がガラスである場合には、ガラスの
融解を防ぐため、導体ペーストを高温(550℃以上)
で焼成することが不可能であり、低温焼成用の導体ペー
ストが開発されていないこと、ガラス基板2と導体ペー
ストとの接着強度が必ずしも十分なものが得られていな
いこと等の理由により実現されていない。
Therefore, it is desirable to form the conductor pattern 5 with a thick film, but if the substrate is glass, the conductor paste should be heated to a high temperature (550°C or higher) to prevent the glass from melting.
This was not realized due to reasons such as the fact that it is impossible to bake at low temperatures, a conductor paste for low-temperature firing has not been developed, and that the adhesive strength between the glass substrate 2 and the conductor paste is not necessarily sufficient. Not yet.

なお、以上の説明では液晶表示装置を例にとって説明し
て来たが、上述のガラス基板上へ厚膜の導体パターンを
形成する事が望ましく、かつ、上述の理由のため実現で
きないでいる事情は、液晶表示装置以外のエレクトロク
ロミック物質を用いた装置や蛍光表示管やプラズマディ
スプレイ等に用いられるガラス基板でも同様であり、今
後の記述においても主にCOGタイプの液晶表示装置を
例にとって説明するが、その他の装置においても同様で
ある。
Although the above explanation has been made using a liquid crystal display device as an example, there are circumstances in which it is desirable to form a thick conductive pattern on the glass substrate, but it cannot be realized for the reasons mentioned above. The same applies to devices using electrochromic substances other than liquid crystal display devices, as well as glass substrates used in fluorescent display tubes, plasma displays, etc. In the following description, we will mainly explain COG type liquid crystal display devices as an example. The same applies to other devices.

本発明は上述したような従来のガラス基板の欠点を解消
するためになされたものであり、製造工程丘の困難さを
回避して基板表面上に強固な接着力で形成された厚膜状
の導体パターンを有するガラス基板を提供することを目
的とする。
The present invention was made in order to solve the above-mentioned drawbacks of conventional glass substrates, and it avoids the difficulties of manufacturing processes and provides a thick film-like film formed with strong adhesive strength on the substrate surface. An object of the present invention is to provide a glass substrate having a conductor pattern.

[問題点を解決するための手段] 本発明になるガラス基板は、少なくとも一表面に厚膜状
の導体パターンを形成したガラス基板において、該ガラ
ス基板の表面と前記導体パターンとの間に、酸化アルミ
ニュウム又は酸化ベリリウム又は酸化ニッケル又は酸化
ケイ素の各酸化物の少なくとも一種をガラスフリフト中
に分散せしめた誘電体層を介在せしめて成ることを特徴
とするものである。
[Means for Solving the Problems] The glass substrate of the present invention has a thick film-like conductor pattern formed on at least one surface, and there is no oxidation between the surface of the glass substrate and the conductor pattern. It is characterized by interposing a dielectric layer in which at least one of aluminum, beryllium oxide, nickel oxide, or silicon oxide is dispersed in a glass lift.

以下、COGタイプの液晶表示装置を例にとって本発明
の詳細な説明する。
Hereinafter, the present invention will be described in detail by taking a COG type liquid crystal display device as an example.

第1図は本発明によるガラス基板を用いて液晶装置を構
成した一例を示す断面図である。
FIG. 1 is a sectional view showing an example of a liquid crystal device constructed using a glass substrate according to the present invention.

図において、ガラス基板2の液晶表示セル形成部分の少
なくとも一表面にはTTO等の電極lが形成されている
。なお1図示しないポリイミド等から成る配向膜が該電
極l上に必要に応じて形成される。該ガラス基板2の電
極1が形成された表面のセル形成部分外に延長された基
板表面上にはほぼ全面に渡って誘電体N12が形成され
、該誘電体層12上に厚膜状の導体パターン5が形成さ
れる。該導体パターン5の一端はセル形成部分内に形成
された電極1の一端に重ね合わされ電気的に接続される
。更に、半田付は部分とセル形成部分内に入り込む部分
を除いて、導体パターン5の上面には保護被膜11が形
成される。
In the figure, an electrode 1 such as TTO is formed on at least one surface of a portion of a glass substrate 2 where a liquid crystal display cell is formed. Note that an alignment film (not shown) made of polyimide or the like is formed on the electrode l if necessary. A dielectric N12 is formed over almost the entire surface of the glass substrate 2 extending outside the cell forming portion of the surface on which the electrode 1 is formed, and a thick film conductor is formed on the dielectric layer 12. Pattern 5 is formed. One end of the conductor pattern 5 is overlapped and electrically connected to one end of the electrode 1 formed within the cell forming portion. Further, a protective coating 11 is formed on the upper surface of the conductor pattern 5 except for the soldering portion and the portion penetrating into the cell forming portion.

かようにして電極lと導体パターン5を形成したガラス
基板2は、電極lと必要に応じて導体パターン5を形成
した他のガラス基板2と電極l形成面を対向させ、周辺
部をシール材3で封止して液晶表示セルを形成し、液晶
物質4をセル内に注入して液晶表示装置とされる。
The glass substrate 2 on which the electrodes 1 and the conductor pattern 5 have been formed in this way is placed so that the electrode 1-forming surface faces another glass substrate 2 on which the electrodes 1 and, if necessary, the conductor patterns 5 are formed, and the peripheral portion is covered with a sealing material. 3 to form a liquid crystal display cell, and a liquid crystal substance 4 is injected into the cell to form a liquid crystal display device.

この後導体パターン5上にICチップ8等の外付は部品
を半田付けして液晶表示装置が完成される。なお、図示
の例では、ICチップ8としてはフリップチップが用い
られており、半田9はフリップチップの半田バンプであ
る。更に外付は部品は図示の様に封止樹脂10で封止す
れば、外気による酸化や衝撃等の外部の影響から該外付
は部品を保護できる。
Thereafter, external components such as the IC chip 8 are soldered onto the conductive pattern 5, and the liquid crystal display device is completed. In the illustrated example, a flip chip is used as the IC chip 8, and the solder 9 is a solder bump of the flip chip. Furthermore, if the external parts are sealed with a sealing resin 10 as shown, the external parts can be protected from external effects such as oxidation from the outside air and impact.

電極1は、前述したように通常はITOが用いられるが
、酸化インジウムあるいは酸化錫単体でも良いし、透明
度が要求されなければ銅等の金属箔など通常用いられる
電極で良い。
As described above, the electrode 1 is usually made of ITO, but it may also be made of indium oxide or tin oxide, or if transparency is not required, a commonly used electrode such as a metal foil made of copper or the like may be used.

ガラス基板2上への電極1の形成法は、ITOや酸化錫
単体などの場合には蒸着法やスパッタ法あるいはメッキ
法等の通常用いられる方法で形成すれば良いし、金属箔
などの場合には接着材等で接着して形成しても良い。
The electrode 1 can be formed on the glass substrate 2 by a commonly used method such as vapor deposition, sputtering, or plating when using ITO or simple tin oxide, or when using metal foil or the like. may be formed by bonding with an adhesive or the like.

ガラス基板2としては通常のソーダライムガラスを用い
れば良い、なおソーダライムガラスを用いる場合には、
導体パターン5の焼成時にガス状のナトリウムが発成す
るのを防止するためにガラスの表面上にシリカ等の薄膜
を塗布する場合がある(いわゆるアンダーコート膜)が
、本発明のガラス基板ではガラス基板2と導体パターン
5との間に誘電体層12を介在せしめるため、該誘電体
層12がナトリウムガスの発生を防止しアンダーコート
が不要となる。なお、ガラス基板2としてはソーダライ
ムガラスに限定されないことは勿論であり、ホウケイ酸
ガラス等他の種類のガラスで良い。
As the glass substrate 2, ordinary soda lime glass may be used. In addition, when soda lime glass is used,
In order to prevent gaseous sodium from being generated during firing of the conductor pattern 5, a thin film of silica or the like is sometimes applied on the surface of the glass (so-called undercoat film). Since the dielectric layer 12 is interposed between the substrate 2 and the conductive pattern 5, the dielectric layer 12 prevents the generation of sodium gas, making an undercoat unnecessary. Note that the glass substrate 2 is of course not limited to soda lime glass, and may be other types of glass such as borosilicate glass.

シール材3はエポキシ樹脂等が用いられる。The sealing material 3 is made of epoxy resin or the like.

液晶物質4は、通常のツイストネマティック型の液晶や
ゲスト・ホスト型の液晶等どの様な種類の液晶であって
も良い。
The liquid crystal material 4 may be any type of liquid crystal, such as a normal twisted nematic type liquid crystal or a guest-host type liquid crystal.

誘電体層12は、ガラスの粉末であるガラスフリットヲ
有機バインダーでペースト状にしたものに、酸化アルミ
ニュウム又は酸化ベリリウム又は酸化ニッケル又は酸化
ケイ素の酸化物のうちの一種又は複数種の酸化物の粉末
を混合し、この誘電体ペーストをガラス基板2の表面の
少なくとも導体パターン5を形成する部分に塗布焼成し
て形成する。この際ガラスフリットとしてガラス基板2
より低融点のものを用いれば、ガラス基板2の融点より
も低い温度で焼成できる。このような低融点ガラスフリ
ットとしてハ、鉛含有系(例エバPb0−Bz03−S
iOz)(7)ガラスフリットを用いれば良い、その代
表例の組成を次に示す。
The dielectric layer 12 is made of glass frit, which is glass powder, made into a paste with an organic binder, and powder of one or more oxides selected from oxides of aluminum oxide, beryllium oxide, nickel oxide, and silicon oxide. This dielectric paste is applied to at least a portion of the surface of the glass substrate 2 where the conductive pattern 5 is to be formed and is baked. At this time, the glass substrate 2 is used as a glass frit.
If a material with a lower melting point is used, it can be fired at a temperature lower than the melting point of the glass substrate 2. As such a low melting point glass frit, lead-containing glass frit (e.g. EVA Pb0-Bz03-S
iOz) (7) Glass frit may be used, and the composition of a typical example thereof is shown below.

(数値は重量パーセント) 上表の組成■のガラスフリットの軟化点は450℃であ
り、組成■のガラスフリットの軟化点は530℃である
0組成■と■とを比較して見れば明らかな様に、酸化鉛
(pbo)の含有量を増加すれば軟化点が低下する。
(The values are weight percentages) The softening point of the glass frit with composition (■) in the table above is 450℃, and the softening point of the glass frit with composition (2) is 530℃. Similarly, increasing the content of lead oxide (pbo) lowers the softening point.

有機バインダーとしては、バイオレイン又はテルピネオ
ール系の油にエチルセルロース等の増粘剤にロジン、ア
マニ油等の分散材を加えたものなどが用いられる。
As the organic binder, a mixture of biolein or terpineol oil, a thickener such as ethyl cellulose, and a dispersant such as rosin or linseed oil is used.

このようにして例えば500℃程度の低温で焼成した誘
電体層12は、焼成時に前記有機バインダーが気化し蒸
発すると同時にガラスフリットが溶融し該ガラスフリッ
ト中に前記酸化物粒子が分散して固化した状態となる。
The dielectric layer 12 fired in this manner at a low temperature of, for example, about 500° C. is such that the organic binder vaporizes and evaporates during firing, the glass frit melts, and the oxide particles are dispersed and solidified in the glass frit. state.

この時の誘電体層12の厚さは例えば3〜10p脂程度
となる。
The thickness of the dielectric layer 12 at this time is, for example, about 3 to 10 p.

なお、前記誘電体ペーストに線膨張係数がガラス基板2
の線膨張係数と等しいジルコン、コージェライト等の添
加剤を加えれば、焼成した誘電体層12中に該添加剤が
残留して誘電体層12とガラス基板2とが同一の線膨張
係数で膨張、収縮を行うので、ガラス基板2と誘電体層
12との接着状態がより確実に保持される。
Note that the linear expansion coefficient of the dielectric paste is the same as that of the glass substrate 2.
If an additive such as zircon or cordierite is added that has a linear expansion coefficient equal to Since the shrinkage is performed, the adhesive state between the glass substrate 2 and the dielectric layer 12 is maintained more reliably.

導体パターン5は、銀の微粒子又は銀とパラジウムの微
粒子等の導電性を有する微粒子と前述の低融点ガラスフ
リットを有機バインダー中に分散させ増粘剤1分散剤を
加えてペースト状にしたものを、前記誘電体層12上に
スクリーン印刷等の方法で塗布し、ガラス基板2の融点
以下の温度で焼成して形成する。この導体パターン5の
厚さも例えば3〜10Bm程度に形成される。なお、前
記導体ペースト中にもジルコン。
The conductor pattern 5 is made by dispersing conductive fine particles such as silver fine particles or silver and palladium fine particles and the above-mentioned low melting point glass frit in an organic binder, and adding a thickener 1 and a dispersing agent to form a paste. It is formed by coating the dielectric layer 12 on the dielectric layer 12 by a method such as screen printing, and firing it at a temperature below the melting point of the glass substrate 2. The thickness of this conductor pattern 5 is also formed to be, for example, about 3 to 10 Bm. Note that zircon is also included in the conductive paste.

コージェライト等の添加剤を導電率が大幅に低下しない
程度に加えれば、導体パターン5と前記誘電体層12と
の接着はより確実に保持される。
If an additive such as cordierite is added to an extent that does not significantly reduce the conductivity, the adhesion between the conductive pattern 5 and the dielectric layer 12 can be maintained more reliably.

このようにして形成された導体パターン5の端部を、第
1図に示す様に、液晶セルのシール材3の位置で前記電
極lの端部に重ね合わせシール材3で押圧するようにす
れば導体パターン5と電極lとの接続がより確実に行わ
れる。
As shown in FIG. 1, the end of the conductor pattern 5 thus formed is overlapped with the end of the electrode 1 at the position of the sealant 3 of the liquid crystal cell and pressed with the sealant 3. In this case, the connection between the conductor pattern 5 and the electrode 1 can be made more reliably.

保護被膜11は、ポリイミド等の有機物などを前記導体
パターン5の半田付は部具外の部分に塗布・加熱して形
成される。この保護被膜11は半田9の流出を防止する
半田ダムの作用をも果す。
The protective film 11 is formed by applying and heating an organic material such as polyimide to a portion of the conductor pattern 5 that is outside the soldering part. This protective coating 11 also functions as a solder dam to prevent the solder 9 from flowing out.

以後ICチップ8等の外付は部品は、従来のCOGと同
様に半田9で半田付けし、封止樹脂lOで封止してガラ
ス基板2上に実装される。
Thereafter, external components such as the IC chip 8 are soldered with solder 9 as in the conventional COG, sealed with a sealing resin IO, and mounted on the glass substrate 2.

なお、ICチップ8として、第1図に示すように、フリ
ップチップ等のフラットパッケージICを用いれば、I
Cチップ8のガラス基板2上に占める面積が小さくなり
微細な回路パターンを要求されるCOGには有利である
Note that if a flat package IC such as a flip chip is used as the IC chip 8, as shown in FIG.
The area occupied by the C chip 8 on the glass substrate 2 is reduced, which is advantageous for COG, which requires a fine circuit pattern.

[作用] 本発明のガラス基板においては、第1図の例で言えば、
ガラス基板2と誘電体層12との接着は、誘電体層12
中のガラスフリフトとガラス基板2とのガラス結合及び
誘電体層12中の酸化物とガラス基板2との酸化物によ
る結合の二重結合によってその接着が強化される。また
、誘電体層12と導体パターン5との間の結合は、誘電
体層12中のガラスフリットと導体パターン5中のガラ
スフリット間のガラス結合と誘電体層12中の酸化物と
導体パターン5との酸化物結合の二重の結合によってそ
の結合が強化される。従って、本発明のガラス基板2と
誘電体層12及び該誘電体層12と導体パターン5との
いずれの間の接着も、ガラス結合と酸化物結合の二重の
結合により接着されるので、導体パターン5はガラス基
板2上に強固に接着されるのである。
[Function] In the glass substrate of the present invention, in the example of FIG.
The adhesion between the glass substrate 2 and the dielectric layer 12 is performed using the dielectric layer 12.
The adhesion is strengthened by the double bond of the glass bond between the glass lift inside and the glass substrate 2 and the oxide bond between the oxide in the dielectric layer 12 and the glass substrate 2. Further, the bond between the dielectric layer 12 and the conductor pattern 5 is the glass bond between the glass frit in the dielectric layer 12 and the glass frit in the conductor pattern 5, and the bond between the oxide in the dielectric layer 12 and the conductor pattern 5. The bond is strengthened by the double oxide bond with. Therefore, the bonding between the glass substrate 2 and the dielectric layer 12 and the dielectric layer 12 and the conductor pattern 5 of the present invention is achieved by double bonding of glass bonding and oxide bonding. The pattern 5 is firmly adhered onto the glass substrate 2.

このことは、第4図に示す様に、誘電体層I2中の酸化
物(本例の場合はアルミナ)の量によって導体パターン
5の接着強度が異なることによっても実験的に検証し得
る。即ち、誘電体層12中に順次アルミナ成分を増加さ
せていくと、ガラス結合に酸化物による結合が付加され
て接着強度が増加する。なお、一定量以上アルミナ成分
を増加すると接着強度は逆に減少するが、これは誘電体
層12の表面にアルミナ成分が集中し始めガラス結合に
よる強度が減少するためである。従って、誘電体層12
中の酸化物成分は所定量であることが望ましく2本実験
例の場合では3%ないし20%、更に望ましくは6%な
いし14%アルミナを含有する事が望ましい。
This can also be experimentally verified by observing that the adhesive strength of the conductor pattern 5 varies depending on the amount of oxide (alumina in this example) in the dielectric layer I2, as shown in FIG. That is, when the alumina component is gradually increased in the dielectric layer 12, oxide bonds are added to the glass bonds, increasing the adhesive strength. Note that when the alumina component is increased beyond a certain amount, the adhesive strength decreases, but this is because the alumina component begins to concentrate on the surface of the dielectric layer 12 and the strength due to glass bonding decreases. Therefore, dielectric layer 12
The oxide component contained therein is desirably in a predetermined amount, and in the case of the two experimental examples, it is desirable to contain alumina in an amount of 3% to 20%, more preferably 6% to 14%.

なお、誘電体層12のガラス基板2と導体パターン5へ
の接着強度の増加は、その表面粗さも寄与する。第6図
ないし第8図は誘電体層12の表面粗さの測定例を示す
データであり、酸化物(本例の場合にはアルミナ)の含
有量が多い程表面粗さは増大する。即ち、第6図、第7
図、第8rXJは、それぞれアルミナを7%。
Note that the surface roughness of the dielectric layer 12 also contributes to an increase in the adhesive strength between the glass substrate 2 and the conductor pattern 5. 6 to 8 show data showing examples of measuring the surface roughness of the dielectric layer 12, and the surface roughness increases as the content of oxide (alumina in this example) increases. That is, Figures 6 and 7
Figure, No. 8rXJ each contains 7% alumina.

17%、34%含有する誘電体層12の表面粗さを示す
測定図であり、各図から明らかな様にアルミナ含有量が
増加するに従って誘電体M12の表面粗さが増加する。
These are measurement diagrams showing the surface roughness of the dielectric layer 12 containing 17% and 34% alumina, and as is clear from each diagram, the surface roughness of the dielectric M12 increases as the alumina content increases.

但しアルミナの含有量が極端に増大した場合には、第5
図のアルミナ分96%のセラミックス基板の測定図から
も分る様に、表面粗さの程度はかえって減少する。
However, if the alumina content increases significantly,
As can be seen from the measurement diagram of a ceramic substrate with an alumina content of 96% in the figure, the degree of surface roughness actually decreases.

誘電体層12の表面が適度の粗さを有している場合にL
±、柁驕雷体層12の凹部を埋めるようにガラス基板2
と導体パターン5が該誘電体層12と接着され、いわゆ
るアンカー効果によって相互の接着が強化される。従っ
てガラスフリット中にアルミナ等の金属の酸化物を分散
せしめた誘電体層12をガラス基板2と導体パターン5
との間に介在せしめることは、この面からも該導体パタ
ーン5のガラス基板2への接着を強化せしめる効果が得
られる。
When the surface of the dielectric layer 12 has appropriate roughness, L
±、Glass substrate 2 so as to fill the concave portion of the 柁驱体层12
The conductive pattern 5 is bonded to the dielectric layer 12, and the mutual adhesion is strengthened by the so-called anchor effect. Therefore, a dielectric layer 12 in which a metal oxide such as alumina is dispersed in a glass frit is connected to a glass substrate 2 and a conductor pattern 5.
The interposition between the conductive pattern 5 and the glass substrate 2 has the effect of strengthening the adhesion of the conductive pattern 5 to the glass substrate 2 from this aspect as well.

[実施例] ソーダライムガラスのセル形成部の表面に■TOを蒸着
形成したガラス基板のセル形成部以外の表面に誘電体ペ
ーストを8ル■の厚さに塗布した。該誘電体ペーストは
前掲した表の組成■のガラスフリットとジルコンを容量
比で2:1に混合したものを70重量%含み、この混合
粉末にアルミナ粉末を10重量%添加したものを20重
量%のビヒクルでペースト状に混練したものである。ビ
ヒクルはパインオレイン85重量%の溶剤に増粘剤とし
て5重量%のエチルセルロースと分散剤として10重量
%のロジンを加えたものである。
[Example] A dielectric paste was applied to a thickness of 8 μl on the surface of a glass substrate other than the cell forming portion, on which TO was vapor-deposited on the surface of the cell forming portion of soda lime glass. The dielectric paste contains 70% by weight of a mixture of glass frit and zircon with a volume ratio of 2:1 of the composition (1) in the table above, and 20% by weight of a mixture containing 10% by weight of alumina powder added to this mixed powder. It is kneaded into a paste with a vehicle. The vehicle was 85% by weight pine olein in a solvent with 5% by weight ethylcellulose as a thickener and 10% by weight rosin as a dispersant.

この様にセル部分の表面にITO2それ以外の部分の表
面に誘電体ペーストを塗布したガラス基板を480°C
で焼成し誘電体ペーストを固化した。
In this way, the glass substrate with ITO2 applied to the surface of the cell part and dielectric paste applied to the other parts was heated to 480°C.
The dielectric paste was solidified by firing.

次に銀80重量%に前記誘電体ペーストに用いたものと
同一組成のガラスフリットを10重量%で混合し、この
混合粉末を前記誘電体ペーストに用いたものと同一の組
成のビヒクル10重量%でペースト状とした導体ペース
トを作成した。
Next, 80% by weight of silver is mixed with 10% by weight of glass frit having the same composition as that used for the dielectric paste, and this mixed powder is mixed with 10% by weight of a vehicle having the same composition as that used for the dielectric paste. A conductive paste was made into a paste.

この導体ペーストをスクリーン印刷法で前記誘電体層上
とITOの端部上に8鉢層厚に塗布し、 480℃で焼
成して導体パターンを形成した。
This conductive paste was applied to a thickness of 8 layers on the dielectric layer and the ends of the ITO using a screen printing method, and was fired at 480° C. to form a conductive pattern.

この導体パターンの接着強度を測定した所2゜6kg重
の接着強度が得られ、ガラス基板上に直接導体パターン
を形成した場合の約2.5倍の接着強度が得られた。
When the adhesive strength of this conductive pattern was measured, an adhesive strength of 2.6 kg was obtained, which was about 2.5 times that of a case where the conductive pattern was directly formed on a glass substrate.

次に、導体パターンの半田付部以外にポリイミドの保護
被膜を形成した後、ITOを蒸着したもう一枚のガラス
基板と上述のガラス基°板のITO面を対向させ、周辺
部をシール材でシールしセルを形成し、内部にTN型の
液晶を注入して、ICチップ等の外付は部品を前記導体
パターンに半田付けし偏向板をセル両外側に設けて液晶
表示装置を作成した。
Next, after forming a polyimide protective film on areas other than the soldered parts of the conductor pattern, another glass substrate on which ITO was vapor-deposited was placed to face the ITO surface of the above-mentioned glass substrate, and the peripheral area was covered with a sealant. A cell was sealed, a TN type liquid crystal was injected inside, external parts such as an IC chip were soldered to the conductive pattern, and deflection plates were provided on both outsides of the cell to produce a liquid crystal display device.

[発明の効果] 本発明のガラス基板は、基板表面と導体パターンとの間
に誘電体層を介在させて導体パターンを形成するように
したので、ガラス基板の表面に導体パターンが強固な接
着強度で接着したガラス基板が得られる。更に、導体パ
ターンが微細パターンとなっても、導体パターンが厚膜
であるために半田喰れ等の現象もなく、信頼性に優れ、
回路パターンの位置合わせも不要であるために生産上の
歩留りも良く、また、スクリーン印刷法で導体パターン
を形成できるので製造コストも安くできる。更に、液晶
表示セル等を形成する場合には、セルのシール材部で表
示電極と導体パターンとを重ね合わせるように形成する
ことにより接続部の信頼性の高い液晶表示セルを形成す
ることができる。
[Effects of the Invention] The glass substrate of the present invention has a dielectric layer interposed between the substrate surface and the conductor pattern to form the conductor pattern, so that the conductor pattern has strong adhesive strength on the surface of the glass substrate. A bonded glass substrate is obtained. Furthermore, even if the conductor pattern becomes a fine pattern, since the conductor pattern is a thick film, there will be no phenomena such as solder eating, resulting in excellent reliability.
Since there is no need to align the circuit pattern, the production yield is good, and since the conductor pattern can be formed by screen printing, the manufacturing cost can be reduced. Furthermore, when forming a liquid crystal display cell, etc., by forming the display electrode and the conductor pattern to overlap in the sealing material part of the cell, it is possible to form a liquid crystal display cell with high reliability in the connection part. .

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明のガラス基板で液晶表示装置を形成した
場合の一例を示す断面図、第2図は従来の液晶表示装置
とフレキシブル基板との接続状態の例を示す断面図、第
3図はCOGの一例を示す断面図、第4図は本発明のガ
ラス基板の導体パターンの接着強度例を示すグラフ、第
5図ないし第8図は誘電体層の表面状態を示す図である
。 1−−一電極、2−一一ガラス基板、3−m−シール材
、4−m=液晶物質、5−m=導体パターン、8−−−
ICチップ、9−−一半田、 11−m−保護被膜、 
12−m−誘電体層。
FIG. 1 is a sectional view showing an example of a liquid crystal display device formed using the glass substrate of the present invention, FIG. 2 is a sectional view showing an example of a connection state between a conventional liquid crystal display device and a flexible substrate, and FIG. 3 4 is a sectional view showing an example of COG, FIG. 4 is a graph showing an example of the adhesive strength of the conductor pattern of the glass substrate of the present invention, and FIGS. 5 to 8 are diagrams showing the surface condition of the dielectric layer. 1--one electrode, 2--11 glass substrate, 3-m-sealing material, 4-m=liquid crystal material, 5-m=conductor pattern, 8--
IC chip, 9--1 solder, 11-m-protective coating,
12-m-dielectric layer.

Claims (2)

【特許請求の範囲】[Claims] (1)少なくとも一表面に厚膜状の導体パターンを形成
したガラス基板において、該ガラス基板の表面と前記導
体パターンとの間に、酸化アルミニュウム又は酸化ベリ
リウム又は酸化ニッケル又は酸化ケイ素の各酸化物の少
なくとも一種をガラスフリット中に分散せしめた誘電体
層を介在せしめて成ることを特徴とするガラス基板。
(1) In a glass substrate on which a thick conductor pattern is formed on at least one surface, an oxide of aluminum oxide, beryllium oxide, nickel oxide, or silicon oxide is formed between the surface of the glass substrate and the conductor pattern. 1. A glass substrate comprising a dielectric layer in which at least one kind of material is dispersed in a glass frit.
(2)導体パターンは少なくとも銀をガラスフリット中
に分散せしめて形成されている特許請求の範囲第1項記
載のガラス基板。
(2) The glass substrate according to claim 1, wherein the conductor pattern is formed by dispersing at least silver in a glass frit.
JP2089585A 1985-02-07 1985-02-07 Glass substrate Granted JPS61183152A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2089585A JPS61183152A (en) 1985-02-07 1985-02-07 Glass substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2089585A JPS61183152A (en) 1985-02-07 1985-02-07 Glass substrate

Publications (2)

Publication Number Publication Date
JPS61183152A true JPS61183152A (en) 1986-08-15
JPH0261428B2 JPH0261428B2 (en) 1990-12-20

Family

ID=12039952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2089585A Granted JPS61183152A (en) 1985-02-07 1985-02-07 Glass substrate

Country Status (1)

Country Link
JP (1) JPS61183152A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6484690A (en) * 1987-09-26 1989-03-29 Matsushita Electric Works Ltd Printed wiring board and the production thereof
US6168781B1 (en) 1997-03-17 2001-01-02 Kao Corporation Spraying apparatus for artificial hair augmenting agent
US7359021B2 (en) 2002-12-26 2008-04-15 Sharp Kabushiki Kaisha Display panel and method for fabricating the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6484690A (en) * 1987-09-26 1989-03-29 Matsushita Electric Works Ltd Printed wiring board and the production thereof
US6168781B1 (en) 1997-03-17 2001-01-02 Kao Corporation Spraying apparatus for artificial hair augmenting agent
US7359021B2 (en) 2002-12-26 2008-04-15 Sharp Kabushiki Kaisha Display panel and method for fabricating the same
US7806744B2 (en) 2002-12-26 2010-10-05 Sharp Kabushiki Kaisha Display panel and method for fabricating the same

Also Published As

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JPH0261428B2 (en) 1990-12-20

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