JPH02301034A - Information recording medium - Google Patents

Information recording medium

Info

Publication number
JPH02301034A
JPH02301034A JP1122039A JP12203989A JPH02301034A JP H02301034 A JPH02301034 A JP H02301034A JP 1122039 A JP1122039 A JP 1122039A JP 12203989 A JP12203989 A JP 12203989A JP H02301034 A JPH02301034 A JP H02301034A
Authority
JP
Japan
Prior art keywords
recording
film
protective film
carbon
recording medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1122039A
Other languages
Japanese (ja)
Inventor
Katsuyuki Yamada
勝幸 山田
Yukio Ide
由紀雄 井手
Masato Harigai
真人 針谷
Hiroko Iwasaki
岩崎 博子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP1122039A priority Critical patent/JPH02301034A/en
Priority to US07/417,541 priority patent/US5024927A/en
Publication of JPH02301034A publication Critical patent/JPH02301034A/en
Pending legal-status Critical Current

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  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)

Abstract

PURPOSE:To carry out recording for a long time by providing a recording film of the material which is reversibly changed by the irradiation of an electromagnetic wave, and a protective film of a carbonaceous material on a substrate. CONSTITUTION:A recording film 3 of a material which is reversibly changed by the irradiation of an electromagnetic wave is provided on a substrate 1, and a protective film 2 of a carbonaceous material is furnished thereon to form the information recording medium. The polymer of a hydrocarbon densely cross-linked, i-carbon, graphite, diamond or their composite are used as the carbonaceous material constituting the protective film 2. The carbonaceous material consists essentially of C and can be added with H, N, O, etc., and the film is formed in 10-100nm or preferably 20-500nm thickness by sputtering, etc. Since the carbon-based thin film is used as the protective film 2 for the recording film 3, the protective film 2 is not crystallized or subjected to the chemical reaction with the recording film 3 even after recording and erasing are repeated, and hence recording can be carried out for a long time.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、光記録素子、光ディスク、文書画像ファイル
、光カード等に利用できる書換可能型情報記録媒体に関
する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a rewritable information recording medium that can be used as an optical recording element, an optical disk, a document image file, an optical card, and the like.

〔従来の技術〕[Conventional technology]

電磁波、特にレーザービームの照射により、情報の記録
、再生、および消去可能な情報記録媒体として、結晶−
結晶あるいは結晶−非晶間の相変化を利用したカルコゲ
ン系薄膜がよく知られている。相変化型記録媒体は光磁
気記録媒体では困難な単一ビームによるオーバーライド
が可能であり、ドライブ側の光学系も単純であることな
どから、最近その研究開発が活発になっている。その代
表的な材料として、USP 3530441号明細書に
開示されているGe−Te、Ge−Te−3b、Ge−
Te−8,Ge−3e−8,Ge−5’e−3b、Ge
−As−3e、In−Te、5e−Te、5e−Asな
どが知られている。また、安定性、高速結晶化等の向上
を目的に、Ge−Te系にAu(特開昭61−2196
92号)、SnおよびAu(特開昭61−270190
号)、pb(特開昭62−19490号)等を添加した
材料の提案や、記録−消去の繰返し性能向上を目的に、
Ge−Te−8e−8bの組成比を特定した材料(特開
昭62−73438号)の提案等もなされている。しか
しながら、そのいずれもが相変化型書換可能情報記録媒
体として要求される諸特性のすべてを満足し得るものと
は言えない。
Crystals are used as information recording media that can record, reproduce, and erase information by irradiation with electromagnetic waves, especially laser beams.
Chalcogen-based thin films that utilize crystal or crystal-amorphous phase change are well known. Phase-change recording media can be overridden with a single beam, which is difficult to do with magneto-optical recording media, and the optical system on the drive side is simple, so research and development into them has recently become active. Typical materials include Ge-Te, Ge-Te-3b, and Ge-Te, which are disclosed in USP 3,530,441.
Te-8, Ge-3e-8, Ge-5'e-3b, Ge
-As-3e, In-Te, 5e-Te, 5e-As, etc. are known. In addition, for the purpose of improving stability and high-speed crystallization, Au (Japanese Patent Application Laid-open No. 61-2196
No. 92), Sn and Au (Japanese Patent Application Laid-open No. 61-270190
With the aim of proposing materials containing additives such as PB (Japanese Patent Application Laid-Open No. 1989-19490), and improving the repeatability of recording and erasing,
A material with a specified composition ratio of Ge-Te-8e-8b has also been proposed (Japanese Unexamined Patent Publication No. 73438/1983). However, it cannot be said that any of these can satisfy all of the characteristics required of a phase change type rewritable information recording medium.

特に記録感度、消去感度の向上、オーバーライド時の消
し残りにより消去比低下の防止ならびに記録部、未記録
部の長寿命化が解決すべき最重要課題となっている。
In particular, the most important issues to be solved are improving recording sensitivity and erasing sensitivity, preventing a decrease in erasing ratio due to unerased data during override, and extending the lifespan of recorded and unrecorded areas.

上記の課題を解決すべき方法の一つに相変化物質を透光
性のマトリックスに分散し、消し残りの原因である相変
化物質の結晶粒径の巨大化等の非可逆変化を防止した情
報記録媒体の提案がなされている。マトリックスとして
は、シリコン、アルミニウム、チタン、マグネシウムの
各酸化物が特開昭57−208648号に提案されてい
る。さらに、特開昭63−173240号では、マトリ
ックスとして熱伝導性の小さいSiO□、SiO,Si
、N4、Tie、、ZnS、ZnO1AI203、AI
N、MgOlGem、SiC,ZrO2、Nb、O,な
どの金属酸化物、金属窒化物、金属硫化物、金属炭化物
が検討されている。
One of the methods to solve the above problems is to disperse the phase change material in a translucent matrix to prevent irreversible changes such as enlargement of the crystal grain size of the phase change material, which is the cause of unerasable residue. Proposals for recording media have been made. As the matrix, oxides of silicon, aluminum, titanium, and magnesium are proposed in Japanese Patent Laid-Open No. 57-208648. Furthermore, in JP-A No. 63-173240, SiO□, SiO, Si, which have low thermal conductivity, are used as a matrix.
,N4,Tie, ,ZnS,ZnO1AI203,AI
Metal oxides, metal nitrides, metal sulfides, and metal carbides such as N, MgOlGem, SiC, ZrO2, Nb, and O are being considered.

また、マトリックスとして、耐熱性の有機材料を検討し
た例が特開昭60−124038号、特開昭63−20
5832号および特開昭63−206921号に述べら
れている。しかし、金属酸化物、金属窒化物、金属硫化
物、金属炭化物等の無機材料によるマトリックスは、記
録−消去の繰返しによる結晶核の生成および結晶成長が
生じてしまい、やはり消し残りの原因や粒界ノイズによ
るC/Nの低下をもたらした。一般に、情報記録媒体に
おける記録膜は、それ単独では、大気中の水分、酸素、
光等によって劣化することから、記録膜の上下ないしは
上に保護膜を形成することが知られている。また、相変
化型光記録では、記録膜が加熱溶融されることから保護
膜は必要不可欠なものである。保護膜に用いられる材料
としては、S i O2、Si3N4.ZnS、AIN
、5iC1ZrO2などの金属酸化物、金属窒化物、金
属硫化物、金属炭化物が検討されている。また、ZnS
とSiOx (x=1〜1.8)の混合物が特開昭63
−276724号に開示されている。しかし、上記金属
化合物は、記録・消去のくり返しによって結晶核の生成
および結晶成長が生じてしまい、やはり消し残りの原因
や粒界ノイズによるC/Nの低下をもたらした。また、
記録膜にTe系のカルコゲンを使用する場合、カルコゲ
ンが活性であることから保護膜材料と化学反応をおこし
、全屈カルコゲン化物を生じ、記録のC/N、寿命の低
下をもたらした。
In addition, examples of considering heat-resistant organic materials as a matrix are JP-A-60-124038 and JP-A-63-20.
No. 5832 and JP-A No. 63-206921. However, with matrices made of inorganic materials such as metal oxides, metal nitrides, metal sulfides, and metal carbides, crystal nuclei are generated and crystals grow due to repeated recording and erasing, which is also the cause of unerased areas and grain boundaries. This resulted in a reduction in C/N due to noise. In general, the recording film in an information recording medium is not able to absorb atmospheric moisture, oxygen, etc. by itself.
It is known to form a protective film above, below, or on top of the recording film because it is deteriorated by light or the like. Further, in phase change optical recording, a protective film is essential because the recording film is heated and melted. Materials used for the protective film include SiO2, Si3N4. ZnS,AIN
, 5iC1ZrO2 and other metal oxides, metal nitrides, metal sulfides, and metal carbides are being considered. Also, ZnS
A mixture of SiOx and SiOx (x=1 to 1.8) is
-276724. However, in the above-mentioned metal compound, crystal nuclei are generated and crystal growth occurs due to repeated recording and erasing, which also causes unerased data and lowers the C/N due to grain boundary noise. Also,
When Te-based chalcogen is used in the recording film, since the chalcogen is active, it causes a chemical reaction with the protective film material to produce a fully curved chalcogenide, resulting in a decrease in recording C/N and lifetime.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

本発明の目的は従来技術における以上の問題を全て解消
し、高い記録感度及び消去比を有し従って高速記録・高
速消去が可能で、しかも記録・消去の繰返しによるC/
N劣化もなく、長寿命の記録が可能な上、複雑なシステ
ムも必要としない書換え可能型情報記録媒体を提供する
ことである。
The purpose of the present invention is to solve all of the above-mentioned problems in the prior art, to have high recording sensitivity and erasure ratio, and therefore to be able to perform high-speed recording and erasing, and to provide C/A by repeating recording and erasing.
It is an object of the present invention to provide a rewritable information recording medium that allows long-life recording without N deterioration and does not require a complicated system.

〔発明の構成〕[Structure of the invention]

本発明の情報記録媒体は基本的には基板上に、電磁波の
照射により光学的に可逆な変化をする物質からなる記録
膜を設け、さらにその上に、炭素系物質からなる保護膜
を設けたものである。
The information recording medium of the present invention basically has a recording film made of a material that optically undergoes reversible change when irradiated with electromagnetic waves on a substrate, and a protective film made of a carbon-based material is further provided on the recording film. It is something.

本発明の情報記録媒体において保護膜を構成する炭素系
物質としては高密度に架橋した炭化水素の重合体、i−
カーボン、グラファイト、ダイヤモンド及びそれらの複
合体が挙げられる。
In the information recording medium of the present invention, the carbon-based material constituting the protective film is a highly crosslinked hydrocarbon polymer, i-
Examples include carbon, graphite, diamond and composites thereof.

これらの炭素系物質はCを主成分とじ、必要に応じてH
,N、O等を含有させることができる。
These carbonaceous materials mainly contain C and H as necessary.
, N, O, etc. can be contained.

炭素系物質の熱分解温度は600℃以上、好ましくは8
00℃以上、さらに好ましくは1000℃以上である。
The thermal decomposition temperature of the carbonaceous material is 600°C or higher, preferably 8°C.
The temperature is 00°C or higher, more preferably 1000°C or higher.

炭化系薄膜の形成はスパッタ、反応性スパッタ、反応性
蒸着、プラズマCVD、光CVD及びこれらの組み合わ
せによる方法などにより行うことができる。膜厚は特に
限定されないが、通常10〜1000nffi、好まし
くは20〜500nmの範囲である。
The carbonized thin film can be formed by sputtering, reactive sputtering, reactive vapor deposition, plasma CVD, photo-CVD, or a combination thereof. Although the film thickness is not particularly limited, it is usually in the range of 10 to 1000 nmfi, preferably 20 to 500 nm.

この炭素系薄膜は、出発材料として炭化水素化合物を必
要があればキャリアガスあるいは反応ガスの存在下、真
空反応器内に、セットされた基板上にプラズマCVD法
、好ましくはグロー放電を利用したプラズマCVD法に
よって成膜する。
This carbon-based thin film is produced using a plasma CVD method, preferably using glow discharge, on a substrate set in a vacuum reactor in the presence of a carrier gas or a reaction gas if necessary, using a hydrocarbon compound as a starting material. The film is formed by CVD method.

成膜条件は反応時のガス圧0.001〜数torr、好
ましくは0.002〜2torr ;グロー放電電力1
〜3OOW、好ましくは5〜100W ;放電1時間1
〜180分、好ましくは2〜120分;基板温度0〜3
50℃。
The film forming conditions are gas pressure during reaction of 0.001 to several torr, preferably 0.002 to 2 torr; glow discharge power of 1
~3OOW, preferably 5~100W; discharge 1 hour 1
~180 minutes, preferably 2-120 minutes; substrate temperature 0-3
50℃.

好ましくは20〜200℃である。Preferably it is 20-200°C.

出発原料としては例えばメタン、エタン、プロパンなど
の炭化水素、メタノール、エタノール、プロパツールな
どのアルコール、ベンゼン、スチレン、キシレンなどの
芳香族化合物などがある。キャリアガスとしては例えば
、He、Ne、Ar、Nzなどの不活性ガスが、また反
応ガスとしてたとえばH2,0□、C○、CO2などが
用いられる。グロー放電装置は直流グロー放電装置であ
っても或いは容量結合型または誘導結合型の交流グロー
放電装置であってもよい。
Examples of starting materials include hydrocarbons such as methane, ethane and propane, alcohols such as methanol, ethanol and propatool, and aromatic compounds such as benzene, styrene and xylene. As the carrier gas, for example, an inert gas such as He, Ne, Ar, or Nz is used, and as the reaction gas, for example, H2,0□, C◯, CO2, etc. are used. The glow discharge device may be a direct current glow discharge device or a capacitively coupled or inductively coupled alternating current glow discharge device.

−万雷磁波の照射により光学的に可逆的な変化をする物
質(以下、光学的可逆性物質という)とは、照射される
電磁波のパワーあるいは波長の違いによって、2つ以上
の構造体を可逆的に変化し、その2つ以上の構造体の反
射率、吸収率、透過率、屈折率などの光学特性が異なる
ものである。
- Substances that undergo optical reversible changes when irradiated with magnetic waves (hereinafter referred to as optically reversible substances) are substances that can reversibly change two or more structures depending on the power or wavelength of the irradiated electromagnetic waves. The two or more structures have different optical properties such as reflectance, absorption, transmittance, and refractive index.

具体的に例を挙げると有機物質、無機物質、金属及び半
金属のうち、前述の性質をもつものならいずれでもよく
、通常はTe、Se等のカルコゲン及びその合金、Zn
−Ag、Cu−Al−Ni等のマルテンサイト変態をす
る物質、フタロシアニン系顔料等の結晶形の変化をする
物質、ジフェニルテルル、ジフェニルセレン、ジメチル
テルル、ジメチルセレン、テルルジイソプロポキシジア
セチルアセトナート、セレンジイソプロポキシジアセチ
ルアセトナート等の有機カルコゲン物質のプラズマCV
D薄膜が使用される。
To give specific examples, any organic substance, inorganic substance, metal, or metalloid having the above-mentioned properties may be used, and usually chalcogens such as Te and Se and their alloys, Zn
- Substances that undergo martensitic transformation such as Ag and Cu-Al-Ni, substances that change crystal form such as phthalocyanine pigments, diphenyl tellurium, diphenyl selenium, dimethyl tellurium, dimethyl selenium, tellurium diisopropoxy diacetylacetonate, Plasma CV of organic chalcogen substances such as selenium diisopropoxy diacetylacetonate
D thin film is used.

記録膜を形成させる基板の材質には特に制約はなく、各
種プラスチック(例えば、ポリメチルメタクリレート、
ポリカーボネートなど)、ガラス、セラミック、金属な
どであってもよい。
There are no particular restrictions on the material of the substrate on which the recording film is formed, and various plastics (for example, polymethyl methacrylate,
(polycarbonate, etc.), glass, ceramic, metal, etc.

又、基板の表面にはアドレス信号などのプレフォーマッ
ト、案内溝のプレグルーブが形成されていてもよい。基
板の形状は使用用途に応じてテープ、ディスク、ドラム
、ベルトなどの任意のものでよい。
Further, a preformat for address signals and a pregroove for a guide groove may be formed on the surface of the substrate. The shape of the substrate may be arbitrary, such as a tape, a disk, a drum, or a belt, depending on the intended use.

本発明の記録媒体には目的に応じて更に他の層(例えば
紫外線硬化性樹脂等の接着層;ポリメチルメタクリレー
ト、ポリカーボネート等の保護板;An、Cr、Au等
の反射層)を配置することができる。また、記録膜を炭
素系薄膜でサンドイッチした層構成も可能である。例え
ば、光ディスクとして利用する場合の一例を第1図に示
す。図中1は基板、2は炭素系物資の1膜、3は記録膜
、4は保護板である。
Depending on the purpose, other layers (for example, an adhesive layer such as an ultraviolet curable resin; a protective plate such as polymethyl methacrylate or polycarbonate; a reflective layer such as An, Cr, or Au) may be disposed on the recording medium of the present invention. I can do it. Furthermore, a layered structure in which the recording film is sandwiched between carbon-based thin films is also possible. For example, FIG. 1 shows an example of use as an optical disc. In the figure, 1 is a substrate, 2 is a film of carbon-based material, 3 is a recording film, and 4 is a protection plate.

記録、再生及び消去に用いる電磁波としてはレーザー光
、電子線、X線、紫外線、可視光線、赤外線、マイクロ
波等、種々のものが採用可能であるが、ドライブに取付
ける際、小型でコンパクトな半導体レーザーのビームが
最適である。
Various types of electromagnetic waves can be used for recording, reproducing, and erasing, such as laser light, electron beams, X-rays, ultraviolet rays, visible light, infrared rays, and microwaves. A laser beam is best.

〔実施例〕〔Example〕

以下に本発明を実施例によって説明する。 The present invention will be explained below by way of examples.

実施例1 情報記録媒体の記録・消去特性を評価するために、基板
/保護膜A/記録膜/保護膜B/接着層/保護板構成の
光ディスクを作製した。
Example 1 In order to evaluate the recording/erasing characteristics of an information recording medium, an optical disk having a structure of substrate/protective film A/recording film/protective film B/adhesive layer/protective plate was prepared.

保護膜Aの炭素系物質の薄膜は、第2図のプラズマCV
D装置内部を油拡散ポンプ13および油回転ポンプ14
を用いてlXl0″″’ torrまで排気したのち、
メタンガスをボンベ5より5SCCM(7)流量、H2
ガスをボンベ6より11005ccの流量で供給し、反
応器内をI XIF2t o r rにしたのち50W
の電力でプラズマを発生させ、RF電極9上にセットさ
れた85mmφのプレグルーブ付ポリカーボネート1上
に1100n厚で合成した。
The thin film of carbon-based material of protective film A is formed by plasma CV in Fig. 2.
D The inside of the device is equipped with an oil diffusion pump 13 and an oil rotary pump 14.
After exhausting to lXl0''''' torr using
5SCCM (7) flow rate of methane gas from cylinder 5, H2
Gas was supplied from cylinder 6 at a flow rate of 11,005cc, and the inside of the reactor was set to IXIF2torr, then 50W.
Plasma was generated with a power of 1,100 nm thick and synthesized on the 85 mmφ pregrooved polycarbonate 1 set on the RF electrode 9.

記録膜は保護膜Aを合成した後、反応器内を再び、I×
10−’ torrまで排気し、ジフェニルテルルを6
5℃に加熱されたボンベ7より、またH2ガスをボンベ
6より11005CCの流量で、Arガスをボンベ8よ
りIO5CCMの流量で供給し1反応器内部をI X 
10−”torrにしたのち50Wの電力でプラズマを
発生させ、保護膜A上に1100n厚で積層した。記録
膜は50人程度のTe超微粒子が超高密度に架橋した炭
素膜中に分散した構造をとっていた。
For the recording film, after synthesizing the protective film A, the inside of the reactor is again heated to I×
Evacuate to 10-' torr and add diphenyltellurium to 6
The inside of 1 reactor was supplied with I
After setting the pressure to 10-" torr, plasma was generated with a power of 50 W, and the film was laminated to a thickness of 1100 nm on the protective film A. The recording film consisted of about 50 Te ultrafine particles dispersed in an ultra-high density cross-linked carbon film. It had a structure.

保護膜Bは保護膜Aと同様に合成した。接着層は紫外線
硬化樹脂を用いて塗布法により形成し、保護層としては
0.5mm厚のポリカーボネートを用いた。
Protective film B was synthesized in the same manner as protective film A. The adhesive layer was formed by a coating method using an ultraviolet curing resin, and the protective layer was made of polycarbonate with a thickness of 0.5 mm.

光デイスク作製時に、ガラス上に合成した炭素系物質の
薄膜(保護膜)を高感度DSC,TGAにより熱分析し
た結果、〜600℃において、熱分解と考えられる発熱
ピークや重量減少は認められなかった。
As a result of thermal analysis using high-sensitivity DSC and TGA of a thin film (protective film) of carbon-based material synthesized on glass during optical disk production, no exothermic peak or weight loss, which could be considered to be thermal decomposition, was observed at ~600°C. Ta.

こうして作製した光ディスクを90Orpmで回転させ
ながらパワー変調したレーザービームを6m/seeの
線速で照射し、記録・消去を繰返したところ、50dB
のC/Nと30dBの消去比が得られ、充分な記録消去
特性が得られた。
When the thus prepared optical disk was rotated at 90 rpm and irradiated with a power-modulated laser beam at a linear velocity of 6 m/see, recording and erasing was repeated, the result was 50 dB.
A C/N of 30 dB and an erasure ratio of 30 dB were obtained, and sufficient recording and erasing characteristics were obtained.

実施例2 保護膜を合成する際、原料に55CCMの流量でスチレ
ン、11005ccの流量でH2ガスを供給した以外は
実施例1と同様情報記録媒体を作成した。このものは実
施例1と同様に良好な結果が得られた。
Example 2 An information recording medium was produced in the same manner as in Example 1 except that styrene was supplied at a flow rate of 55 CCM and H2 gas was supplied at a flow rate of 11005 cc to the raw materials when synthesizing the protective film. Similar to Example 1, good results were obtained with this product.

実施例3 記録膜に1100n厚のAg1nTe2スパツタ膜を用
いた以外は実施例1と同様に情報記録媒体を作製した。
Example 3 An information recording medium was produced in the same manner as in Example 1 except that a 1100 nm thick Ag1nTe2 sputtered film was used as the recording film.

このものは実施例1と同様に良好な結果が得られた。Similar to Example 1, good results were obtained with this product.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明によれば情報記録媒体にお
ける記録膜の保護膜に炭素系薄膜を使用しているため、
記録、消去のくり返しによる保護膜の結晶化および記録
膜との化学反応も生じないため記録の長寿命化が図れる
As explained above, according to the present invention, since a carbon-based thin film is used as the protective film of the recording film in the information recording medium,
Since crystallization of the protective film and chemical reaction with the recording film do not occur due to repeated recording and erasing, the lifetime of recording can be extended.

記録膜が電磁波の照射により光学的に可逆な変化をする
物質からなる微粒子が分散した炭素系物質の薄膜である
場合、保護膜および記録膜がともに、炭素系物質から成
るため、保農膜−記録膜の接着性が良好であり、熱等に
よるハクリ等がなくなり、記録の寿命を一層長くするこ
とができる。
If the recording film is a thin film of a carbon-based material in which fine particles of a material that optically undergoes a reversible change upon irradiation with electromagnetic waves are dispersed, the protective film and the recording film are both made of carbon-based material. The adhesiveness of the recording film is good, there is no peeling due to heat, etc., and the life of the recording can be further extended.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の情報記録媒体の一具体例の説明図、第
2図は、本発明の情報記録媒体を作製するための装置の
説明図である。 l・・・基板       2・・・炭素系物質3・・
・記録膜、     4・・・保護板、5・・・メタン
ガスボンベ 6・・・H2ガスボンベ(スチレン用容器
) 7・・・ジフェニルテルル用容器 8・・・Arガスボンベ 9・・・RF電極     10・・・対向電極11・
・・RF電源    12・・・真空計13・・・油拡
散ポンプ  14・・・油回転ポンプ15・・・基板温
度調節ユニット 第1図 第2図
FIG. 1 is an explanatory diagram of a specific example of the information recording medium of the present invention, and FIG. 2 is an explanatory diagram of an apparatus for producing the information recording medium of the present invention. l...Substrate 2...Carbon-based material 3...
- Recording film, 4... Protective plate, 5... Methane gas cylinder 6... H2 gas cylinder (styrene container) 7... Diphenyltellurium container 8... Ar gas cylinder 9... RF electrode 10.・Counter electrode 11・
...RF power supply 12...Vacuum gauge 13...Oil diffusion pump 14...Oil rotary pump 15...Substrate temperature control unit Fig. 1 Fig. 2

Claims (1)

【特許請求の範囲】[Claims] 1、基盤上に、電磁波の照射により光学的に可逆な変化
をする物質よりなる記録膜と、炭素系物質からなる保護
膜とを有することを特徴とする情報記録媒体。
1. An information recording medium comprising, on a substrate, a recording film made of a material that undergoes optical reversible change upon irradiation with electromagnetic waves, and a protective film made of a carbon-based material.
JP1122039A 1988-10-06 1989-05-16 Information recording medium Pending JPH02301034A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1122039A JPH02301034A (en) 1989-05-16 1989-05-16 Information recording medium
US07/417,541 US5024927A (en) 1988-10-06 1989-10-04 Information recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1122039A JPH02301034A (en) 1989-05-16 1989-05-16 Information recording medium

Publications (1)

Publication Number Publication Date
JPH02301034A true JPH02301034A (en) 1990-12-13

Family

ID=14826089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1122039A Pending JPH02301034A (en) 1988-10-06 1989-05-16 Information recording medium

Country Status (1)

Country Link
JP (1) JPH02301034A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6468617B1 (en) 1993-07-20 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating
US6835523B1 (en) * 1993-05-09 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61217943A (en) * 1985-03-22 1986-09-27 Matsushita Electric Ind Co Ltd Optical disk
JPS6453360A (en) * 1987-08-25 1989-03-01 Hitachi Maxell Optical recording medium and its production

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61217943A (en) * 1985-03-22 1986-09-27 Matsushita Electric Ind Co Ltd Optical disk
JPS6453360A (en) * 1987-08-25 1989-03-01 Hitachi Maxell Optical recording medium and its production

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6835523B1 (en) * 1993-05-09 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating
US6468617B1 (en) 1993-07-20 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating

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