JPH02299141A - Image forming device and driving method thereof - Google Patents

Image forming device and driving method thereof

Info

Publication number
JPH02299141A
JPH02299141A JP11860789A JP11860789A JPH02299141A JP H02299141 A JPH02299141 A JP H02299141A JP 11860789 A JP11860789 A JP 11860789A JP 11860789 A JP11860789 A JP 11860789A JP H02299141 A JPH02299141 A JP H02299141A
Authority
JP
Japan
Prior art keywords
electron
image forming
electrodes
focusing
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11860789A
Other languages
Japanese (ja)
Other versions
JP2961421B2 (en
Inventor
Toshihiko Takeda
俊彦 武田
Hidetoshi Suzuki
英俊 鱸
Ichiro Nomura
一郎 野村
Yoshikazu Sakano
坂野 嘉和
Haruto Ono
治人 小野
Tetsuya Kaneko
哲也 金子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP1118607A priority Critical patent/JP2961421B2/en
Publication of JPH02299141A publication Critical patent/JPH02299141A/en
Application granted granted Critical
Publication of JP2961421B2 publication Critical patent/JP2961421B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/30Cold cathodes
    • H01J2201/316Cold cathodes having an electric field parallel to the surface thereof, e.g. thin film cathodes
    • H01J2201/3165Surface conduction emission type cathodes

Abstract

PURPOSE:To facilitate the convergence and divergence of emitted electron beams by providing electron converging/diverging electrodes near electron emission sections of surface conductive type electron emitting elements, and expanding electron beams emitted by the potential of the electrodes in the horizontal direction. CONSTITUTION:Grid electrodes 4 to extract electrons are provided vertically above multiple surface conductive type electron emitting elements 2 connected in parallel on an insulating substrate 1 made of glass or the like, and a faceplate 6 coated with phosphors 5 is provided at the position corresponding to holes of electrodes 4. Converging/diverging electrodes 3 controlling the potential are provided separately from elements 2 between emission sections connected in parallel. Electron beams 14 emitted from elements 2 are positively expanded in the horizontal direction by the DC voltage applied to electrodes 3, and multiple phosphors 5 are illuminated by electron beams 14 emitted from one emission section 2.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、真空中で電子放出を行う素子と蛍光体を塗布
したフェースプレートから成る画像形成装置に関するも
のである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an image forming apparatus comprising an element that emits electrons in a vacuum and a face plate coated with a phosphor.

[従来の技術J 従来、面状に展開した複数の電子源と、この電子源から
の電子ビームの照射を各々受ける蛍光体ターゲットとを
、各々相対向させた薄形の画像表示装置が、特開昭56
−28445号で提案されている。
[Prior Art J] Conventionally, a thin image display device in which a plurality of planar electron sources and phosphor targets each receiving electron beam irradiation from the electron sources are opposed to each other has been developed. 1977
-28445.

この方式によれば、電子ビームを偏向させる必要がない
ため、一般のCRTに比べて、奥ゆきの非常に小さな画
像表示装置の実現が期待できる。しかし、残念なことに
、電子源としてコイル状ヒータ形式の熱カソードな用い
ているため、電子放出効率が低(、しかも構造が複雑化
してしまい、装置の消費電力や製造コストが莫大なもの
となることから、実用化されるまでには至っていない。
According to this method, since there is no need to deflect the electron beam, it is expected that an image display device with a much smaller depth than a general CRT can be realized. Unfortunately, however, because a hot cathode in the form of a coiled heater is used as the electron source, the electron emission efficiency is low (and the structure is complicated, resulting in enormous power consumption and manufacturing costs for the device). For this reason, it has not yet been put into practical use.

そこで、上記コイル状ヒータ形式の熱カソードに代えて
、電子源として一般に表面伝導形放出素子と呼ばれる電
子源を用いることにより、電子放出効率の向上並びに構
造の簡略化を図り、奥行の非常に小さな画像表示装置の
実用化が考えられている。
Therefore, in place of the above-mentioned coiled heater-type thermal cathode, an electron source generally called a surface conduction type emitter is used as an electron source to improve electron emission efficiency and simplify the structure. The practical application of image display devices is being considered.

従来、簡単な構造で電子の放出が得られる素子として、
例えば、エム・アイ・エリンソン(M、I。
Conventionally, as an element that can emit electrons with a simple structure,
For example, M.I. Ellingson (M,I.

Elinson)等によって発表された冷陰極素子が知
られている[ラジオ・エンジニアリング・エレクトロン
・)、イジイッス (Radio Eng、 Eiec
tron。
The cold cathode device announced by E. Elinson and others is well known.
tron.

Phys、)第1O巻、 1290〜1296頁、 1
965年]。
Phys,) Volume 1O, pp. 1290-1296, 1
965].

これは、基板上に形成された小面積の薄膜に、膜面に平
行に電流を流すことにより、電子放出が生ずる現象を利
用するもので、一般には表面伝導形放出素子と呼ばれて
いる。
This device utilizes the phenomenon that electrons are emitted when a current is passed through a small-area thin film formed on a substrate parallel to the film surface, and is generally called a surface conduction type emission device.

この表面伝導形放出素子としては、前記エリンソン等に
より開発された5nOt (Sb)薄膜を用いたものの
他、Au薄膜によるもの[ジー・ディトマ一二“スイン
・ソリド・フィルムス” (G、 ditta+er 
:Th1n 5olid FLlms”)、9巻、31
7頁、 (1972年) ] 、ITO薄膜によるもの
[エム・ハートウェル・アンド・シー・ジ・フオンスタ
ッド: “アイ・イー・イー・イー・トランス・イー・
ディー・コンフ″ (M、 Hartweli and
 C,G、 Fonstad :“ IEEE Tra
ns、 ED Conf、 ” )519頁、  19
75年)1、カーボン薄膜によるもの[荒木久他: “
真空”。
This surface conduction type emission device uses a 5nOt (Sb) thin film developed by Ellingson et al., as well as one using an Au thin film [G.
: Th1n 5olid FLlms”), Volume 9, 31
7, (1972)], by ITO thin film [M. Hartwell and C.J. Fonstad: “I.E.I.E.
D Conf'' (M, Hartweli and
C.G.Fonstad: “IEEE Tra.
ns, ED Conf, ”) page 519, 19
1. Carbon thin film [Hisashi Araki et al.: “
vacuum".

第26巻、第1号、22頁、  (1983年)]等が
報告されている。
Vol. 26, No. 1, p. 22, (1983), etc. have been reported.

これらの表面伝導形放出素子は、 l) 高い電子放出効率が得られる、 2)構造が簡単であるため、製造が容易である、3)同
一基板上に多数の素子を配列形成できる、4)応答速度
が速い、 等の利点があり、今後床(応用される可能性をもってい
る。
These surface conduction type emitters have the following properties: l) High electron emission efficiency can be obtained; 2) They have a simple structure and are therefore easy to manufacture; 3) A large number of elements can be arranged and formed on the same substrate; 4) It has advantages such as fast response speed, and has the potential to be applied to floors in the future.

[発明が解決しようとする課題] しかしながら、上記従来例では表面伝導形放出素子から
放出される電子線は、三日月状の広がり特性を持ってい
るため、次のような欠点を有していた。
[Problems to be Solved by the Invention] However, in the conventional example described above, since the electron beam emitted from the surface conduction type emitter has a crescent-shaped spreading characteristic, it had the following drawbacks.

(1)表面伝導形放出素子から放出された電子線を任意
の形状、大きさに集束させるためには、非常に複雑な電
子光学系を必要とする。
(1) In order to focus the electron beam emitted from the surface conduction type emitter into an arbitrary shape and size, a very complicated electron optical system is required.

(2)素子特有の広がり特性のために、同一基板上に高
密度に配列された画像形成装置を実現することは困難で
ある。
(2) Due to the spreading characteristics peculiar to the elements, it is difficult to realize an image forming apparatus in which the elements are arranged at high density on the same substrate.

また、多数の電子源をマルチ配列した画像形成装置では
、−個の素子が特性劣化あるいは故障した際に、そこに
対応した発光部もまた発光特性の劣化あるいは発光の消
滅を生じる。高密度に集積、配列された画像形成装置で
は、−画面中の1点の非発光化は極めて顕著であり、高
精細画像の表示に対しては望ましくない。
Furthermore, in an image forming apparatus in which a large number of electron sources are arranged in a multi-array, when - elements deteriorate in characteristics or fail, the corresponding light-emitting section also suffers deterioration in its light-emitting characteristics or extinction of light emission. In image forming apparatuses that are densely integrated and arranged, - non-emission of light at one point on the screen is extremely noticeable and is not desirable for displaying high-definition images.

さらに、マルチ電子源を用いた画像形成装置では、電子
放出部を数百万ケ所と極めて多数、高密度に配列させる
ため、装置完成後の故障修理、補正は事実上不可能であ
る。
Furthermore, in an image forming apparatus using a multi-electron source, an extremely large number of electron-emitting parts (several million) are arranged at high density, so that it is virtually impossible to repair or correct a malfunction after the apparatus is completed.

以上のような問題点があるため、かかる表面伝導形放出
素子が産業上積極的に応用されるには至らず、さらに極
めて薄形化が可能なマルチ電子源を用いた画像形成装置
も実現には至っていない。
Due to the above-mentioned problems, such surface conduction type emitters have not been actively applied in industry, and furthermore, image forming devices using multi-electron sources that can be made extremely thin have not been realized. has not yet been reached.

本発明は、上記従来例の欠点を除去することを目的とし
てなされたものである。
The present invention has been made for the purpose of eliminating the drawbacks of the above-mentioned conventional examples.

[課題を解決するための手段] 上記問題点を解決するために、本発明において講じられ
た手段を最も良く表わす第1図で説明する。
[Means for Solving the Problems] In order to solve the above problems, the means taken in the present invention will be explained with reference to FIG. 1, which best represents the measures taken in the present invention.

本発明では、ガラス等の絶縁性基板上に並列接続された
複数の表面伝導形電子放出素子2の鉛直上に、電子を引
き出すためのグリッド電極4を設け、さらに各グリッド
電極の孔に対応した位置に、蛍光体5を塗布したフェー
スプレート6を設けて画像形成放置を構成している。ま
た、並列接続された各放出部の間に、素子とは別に電位
を制御できる集束拡散電極3を設け、該集束拡散電極3
に印加する直流電圧によって放出素子から放出される電
子線を積極的に水平方向に広げて、1ケ所の放出部から
放出された電子線で複数の蛍光体を発光させるという手
段を講じている。
In the present invention, a grid electrode 4 for extracting electrons is provided vertically above a plurality of surface conduction electron-emitting devices 2 connected in parallel on an insulating substrate such as glass, and a grid electrode 4 is provided for drawing out electrons. A face plate 6 coated with a phosphor 5 is provided at the position where an image is formed and left. Further, a focusing diffusion electrode 3 whose potential can be controlled separately from the element is provided between each of the emission parts connected in parallel, and the focusing diffusion electrode 3
A method is taken in which the electron beam emitted from the emitting element is actively spread in the horizontal direction by a DC voltage applied to the emitting element, and the electron beam emitted from one emitting part causes a plurality of phosphors to emit light.

本発明で用いられている表面伝導形放出素子は、微小間
隔部に生じる強電界によって電子放出せしめる素子であ
る。その原理には未だ不明確な点もあるが、本発明者ら
が検討を行った結果、本素子から放出される電子線の広
がりは、本素子が通電方向に対して直角方向に印加電圧
のおよそ1/2程度に相当する初速度を持った電子によ
っていることが明らかになっている。従って本素子から
の電子線を放出部と同等あるいはそれ以下に集束させる
ためには上記初速度を無視しつる程度の高電圧で加速し
、かつ素子から発光部までの距離を無限に近づけるかま
たは、複雑な電子光学系を用いな(てはならず、画像形
成装置には不都合である。
The surface conduction type emission device used in the present invention is a device that emits electrons by a strong electric field generated in a minute space. Although some aspects of the principle are still unclear, as a result of studies conducted by the present inventors, the spread of the electron beam emitted from this device is It has been revealed that this is caused by electrons with an initial velocity equivalent to about 1/2. Therefore, in order to focus the electron beam from this element to the same level as or less than the emission part, the above initial velocity should be ignored and the electron beam should be accelerated at a high enough voltage, and the distance from the element to the emission part should be made infinitely close or However, a complicated electron optical system must be used, which is inconvenient for the image forming apparatus.

そこで、本発明では本素子が持つ上記特徴を積極的に利
用して、画像形成装置とするものであり、放出部近傍の
集束拡散電極に任意の電圧を与えることで、電子線の拡
散、集束を生じさせるものである。
Therefore, in the present invention, the above-mentioned characteristics of the present device are actively utilized to create an image forming device.By applying an arbitrary voltage to the focusing/diffusion electrode near the emission part, the electron beam can be diffused and focused. It is something that causes

[実施例] 以下、図面を用いて本発明の実施例を詳細に説明する。[Example] Embodiments of the present invention will be described in detail below with reference to the drawings.

11■ユ 第1図は、本発明による画像形成装置の一実施例を示す
部分断面図である。同図において、1はガラス基板、2
は1つのライン状に並列接続された表面伝導形電子放出
素子、3は各放出部近傍に設けた集束拡散用電極、4は
グリッド電極、5は蛍光体、6は蛍光体を塗布したフェ
ースプレートである。
FIG. 1 is a partial sectional view showing an embodiment of an image forming apparatus according to the present invention. In the figure, 1 is a glass substrate, 2
1 is a surface conduction electron-emitting device connected in parallel in a line, 3 is a focusing diffusion electrode provided near each emission part, 4 is a grid electrode, 5 is a phosphor, and 6 is a face plate coated with a phosphor. It is.

上記構成は、まずガラス基板lを充分有機洗浄した後、
通常のフォトリングラフィ技術等を用いて、集束拡散用
電極3を形成する。このとき、集束拡散用電極が電子放
出部に直接影響を与えないように放出素子の配線方向と
は直交する方向に集束拡散用電極を配置する。
In the above configuration, first, after the glass substrate l is sufficiently organically cleaned,
The focusing diffusion electrode 3 is formed using a normal photolithography technique or the like. At this time, the focusing/diffusion electrode is arranged in a direction perpendicular to the wiring direction of the emitting element so that the focusing/diffusion electrode does not directly affect the electron emitting section.

次に、電子放出部を形成する数百人から数十1の微小間
隔を有する一対の電極を上記基板1上にフォトリングラ
フィ技術を用いて形成する。このとき、前記集束拡散用
電極と交差する部分には予めlpmの5iftをスパッ
タにより形成して両電極の絶縁性を確保した。こうして
得られた放出部を形成する電極の幅は、200 ptm
であり、素子ピッチはLlである。
Next, a pair of electrodes having minute intervals of several hundred to several tens of electrodes, which will form an electron emitting region, are formed on the substrate 1 using photolithography technology. At this time, 5ift of 1pm was previously formed by sputtering on the portion intersecting with the focusing diffusion electrode to ensure insulation between both electrodes. The width of the electrode forming the emission part thus obtained was 200 ptm.
and the element pitch is Ll.

次に、200μm幅の電極間に有機パラジウム化合物を
含む有機溶媒(奥野製薬工業製キャタペース)−CCP
)を塗布した後、空気中で250℃、10分間の焼成を
行いパラジウムを微粒子化して島構造を有する不連続状
態膜とした(図示せず)、こうして、ZOOp、rn幅
の放出部とその両側に偏向用電極を有するマルチ電子源
を得た。
Next, an organic solvent containing an organic palladium compound (Catapace manufactured by Okuno Pharmaceutical Industries)-CCP was used between the electrodes with a width of 200 μm.
), the palladium was baked in air at 250°C for 10 minutes to make the palladium into fine particles and form a discontinuous film with an island structure (not shown). A multi-electron source with deflection electrodes on both sides was obtained.

次に、第1図に示したように、ガラス基板lからIII
Imの間隔をあけてグリッド電極4を設けた。
Next, as shown in FIG.
Grid electrodes 4 were provided at intervals of Im.

このとき、1ケ所の放出部から放出された電子線で2ケ
所の発光を得るため、2つのグリッド孔が1つの放出部
から等間隔になるような配置とした。グリッド孔の直径
は、400 p、m、孔のピッチは500 Pmである
。さらに、ブリーラド電極から511Q+の位置に蛍光
体を塗布したフェースプレート6を設けて装置を完成し
た。
At this time, in order to obtain light emission from two places with the electron beam emitted from one emission part, the two grid holes were arranged at equal intervals from one emission part. The diameter of the grid holes is 400 Pm, and the pitch of the holes is 500 Pm. Further, a face plate 6 coated with phosphor was provided at a position 511Q+ from the Bree Rad electrode to complete the device.

こうして得られた装置の内部をI X 10−’Tor
r程度の真空に維持して、電子放出素子に直流電圧14
Vを印加しグリッドにI KV、フェースプレートに5
KVを印加し、集束拡散用電極をアース電位としたとこ
ろグリッド孔の位置に対応した蛍光体上に微小な発光が
観察された。
The interior of the device thus obtained was heated to I
A DC voltage of 14 cm is applied to the electron-emitting device while maintaining a vacuum of about
Apply V to the grid, I KV to the faceplate, 5 to the faceplate.
When KV was applied and the focusing/diffusion electrode was brought to earth potential, minute light emission was observed on the phosphor corresponding to the position of the grid hole.

次に、並列に接続されている放出素子のうち、1ケ所の
放出部を切り離し、非放出化して再度同様の実験を行っ
たところ、非放出化した部分に対応した位置の蛍光体2
ケ所が発光しなくなり、1ケ所の放出部で2ケ所の蛍光
体に電子線を照射していることが確認された。
Next, among the emitting elements connected in parallel, one of the emitting parts was separated and made non-emissive, and the same experiment was conducted again.
It was confirmed that two phosphors were irradiated with electron beams by one emission part.

さらに、同装置で素子印加電圧を14V、グリッド電圧
をIKV、フェースプレート電圧を5KVとして、集束
拡散用電極3に直流電圧を徐々に印加したところ20V
程度から前記非放出化によって発光しなくなった位置に
再度輝点が観察された。この輝点の明るさは他の明るさ
に比べやや暗いものの必要とする発光強度は得られた。
Furthermore, when using the same device, a DC voltage was gradually applied to the focusing diffusion electrode 3 with the element applied voltage of 14 V, the grid voltage of IKV, and the face plate voltage of 5 KV, resulting in a voltage of 20 V.
Bright spots were observed again at the positions where no light was emitted due to the non-emission. Although the brightness of this bright spot was slightly lower than other brightnesses, the required luminous intensity was obtained.

このときの電子の飛翔の様子を第2図に模式的に示す。Figure 2 schematically shows how the electrons fly at this time.

第2図において、非放出化された放出部7から電子の供
給を受けるべきグリッド孔8,9は、集束拡散用電極3
によって広げられた放出部2から放出された電子の一部
を供給されて8.9に対応した位置の蛍光体を発光させ
ている。
In FIG. 2, the grid holes 8 and 9 to which electrons should be supplied from the non-emissive emitter 7 are connected to the focusing and diffusing electrode 3.
A part of the electrons emitted from the emitting part 2 spread out by is supplied to cause the phosphor at the position corresponding to 8.9 to emit light.

従って、本実施例で作製した装置では、集束拡散用電極
に印加する電圧を適当に選ぶことによって隣接する画素
にまで電子線を供給することが可能であった。
Therefore, in the device manufactured in this example, it was possible to supply electron beams even to adjacent pixels by appropriately selecting the voltage applied to the focusing diffusion electrode.

11■ユ 次に画像形成装置として、予め集束拡散用電極によって
放出電子線を集束させておき、必要時に電子線の拡散を
行う装置を作製した。第3図に示すように実施例1と同
様に、まずガラス基板1を十分有機洗浄した後、通常の
フォトリングラフィ技術等を用いて、集束拡散用電極3
を形成する。
11) Next, as an image forming apparatus, an apparatus was manufactured in which the emitted electron beam was focused in advance by a focusing and diffusing electrode, and the electron beam was diffused when necessary. As shown in FIG. 3, in the same manner as in Example 1, first, the glass substrate 1 is sufficiently organically cleaned, and then the focusing diffusion electrode 3 is
form.

このとき、集束拡散用電極が電子放出部に直接影響を与
えないように、放出素子の配線方向とは直交する方向に
集束拡散用電極を配置する。
At this time, the focusing/diffusion electrode is arranged in a direction perpendicular to the wiring direction of the emitting element so that the focusing/diffusion electrode does not directly affect the electron emission section.

次に放出部及び集束拡散用電極を設けた基板1上の電極
配線部に2ml11厚のスペーサを置き、そのスペーサ
を介して、実施例1同様にグリッド電極4とフェースプ
レート6を設けた。基板1とグリッド電極4の距離は2
mm、グリッド電極とフェースプレートの距離は4mm
である。
Next, a 2 ml 11 thick spacer was placed on the electrode wiring section on the substrate 1 on which the emission section and focusing/diffusion electrode were provided, and the grid electrode 4 and face plate 6 were provided via the spacer in the same manner as in Example 1. The distance between the substrate 1 and the grid electrode 4 is 2
mm, distance between grid electrode and face plate is 4 mm
It is.

こうして得られた装置をl X 10−’Torr程度
の真空に保ち、素子印加電圧を14V、グリッド印加電
圧を500v、フェースプレート印加電圧を5KV、集
束拡散電極印加電圧をOVとしたとき、1ケ所の電子放
出部2から放出される電子線は、グリッド孔10.11
.12.13の4ケ所を通過して蛍光体5の4ケ所に微
小な発光輝点を形成した。
The device thus obtained is kept in a vacuum of about l x 10-'Torr, and when the voltage applied to the element is 14V, the voltage applied to the grid is 500V, the voltage applied to the face plate is 5KV, and the voltage applied to the focusing diffusion electrode is OV, one place The electron beam emitted from the electron emission part 2 of
.. The light passed through the four locations of 12.13 and formed minute light-emitting bright spots at four locations on the phosphor 5.

そこで、電子放出部2から放出された電子線をグリッド
孔11.12にのみ集束させるため、集束拡散用電極3
に種々の電圧を印加したところ、−15V程度のときほ
ぼ11.12の2ケ所に対応した輝点のみが観察され、
実施例1と同様に集束拡散用電極の効果が確認された。
Therefore, in order to focus the electron beam emitted from the electron emitter 2 only on the grid holes 11 and 12, the focusing diffusion electrode 3
When various voltages were applied to -15V, only two bright spots corresponding to approximately 11.12 were observed.
As in Example 1, the effect of the focusing and diffusing electrode was confirmed.

また、集束拡散用電極に印加する電圧によって電子線の
集束、拡散が可能なため、並列接続された放出部に機能
劣化等が生じた場合、隣接する放出部の電子線を一部利
用することで画像形成装置として致命的なダメージを避
けることが可能であった。
In addition, since the electron beam can be focused and diffused by the voltage applied to the focusing/diffusion electrode, in the event of functional deterioration in the parallel-connected emitters, part of the electron beams from the adjacent emitters can be used. It was possible to avoid fatal damage to the image forming device.

[発明の効果] 以上説明したように、本発明によれば (1)放出部近傍の同一基板上に集束拡散電極を設ける
ことができるため、放出電子線の集束、拡散が容易であ
る。
[Effects of the Invention] As described above, according to the present invention, (1) the focusing and diffusing electrode can be provided on the same substrate near the emission part, so that the emitted electron beam can be easily focused and diffused.

(2)1ケ所の放出部から放出される電子線によって任
意の輝点を形成できるため、一部の素子劣化の影響を受
けにく(、画質低下の少ない画像形成装置を提供できる
(2) Since an arbitrary bright spot can be formed by the electron beam emitted from one emission part, it is possible to provide an image forming apparatus that is less susceptible to deterioration of some elements (and has less deterioration in image quality).

(3)集束拡散用電極の電圧を任意に設定できるため、
装置の各電極の電圧、位置関係に対する自由度が大きい
(3) Since the voltage of the focusing diffusion electrode can be set arbitrarily,
There is a large degree of freedom regarding the voltage and positional relationship of each electrode of the device.

以上のような効果がある。There are effects as described above.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の特徴をあられす一実施形態の部分断
面図、第2図は実施例1で作製した装置の部分断面図、
第3図は実施例2で作製した装置の部分断面図を表わす
。 1・・・ガラス基板 2・・・電子放出部 3・・・集束拡散用電極 4・・・グリッド電極 5・・・蛍光体 6・・・フェースプレート 7・・・非放出化された放出部 8、9.10.11,12.13・・・グリッド電極の
孔14・・・電子線
FIG. 1 is a partial sectional view of an embodiment showing the features of the present invention, FIG. 2 is a partial sectional view of the device manufactured in Example 1,
FIG. 3 shows a partial cross-sectional view of the device manufactured in Example 2. DESCRIPTION OF SYMBOLS 1... Glass substrate 2... Electron emitting part 3... Focusing diffusion electrode 4... Grid electrode 5... Fluorescent material 6... Face plate 7... Emitting part made non-emissive 8, 9.10.11, 12.13...Grid electrode hole 14...Electron beam

Claims (3)

【特許請求の範囲】[Claims] (1)少なくとも複数の表面伝導形放出素子とグリッド
電極及び顕画面を備える画像形成装置において、前記素
子の電子放出部近傍に電子線集束、拡散電極を有し、該
電極の電位によって前記素子の一つにより前記顕画面に
おいて形成される画素数が可変であることを特徴とする
画像形成装置。
(1) An image forming apparatus including at least a plurality of surface conduction type emission elements, a grid electrode, and a microscope screen, which has an electron beam focusing and diffusion electrode near the electron emission part of the element, and the electric potential of the electrode causes the element to An image forming apparatus characterized in that the number of pixels formed on the microscope screen is variable.
(2)前記画像形成装置における、一部素子の故障時に
、前記電子線集束拡散電極に正電圧を印加し、拡散機能
を生じせしめることを特徴とする請求項1記載の画像形
成装置の駆動方法。
(2) A method for driving an image forming apparatus according to claim 1, characterized in that when some elements in the image forming apparatus fail, a positive voltage is applied to the electron beam focusing diffusion electrode to generate a diffusion function. .
(3)前記画像形成装置において、全素子正常動作時に
前記電子線集束拡散電極に集束機能を持たせ、一部素子
の故障時に集束機能を停止させることを特徴とする請求
項1記載の画像形成装置の駆動方法。
(3) In the image forming apparatus, the electron beam focusing diffusion electrode is provided with a focusing function when all the elements are operating normally, and the focusing function is stopped when some elements are malfunctioning. How to drive the device.
JP1118607A 1989-05-15 1989-05-15 Image forming apparatus and driving method thereof Expired - Fee Related JP2961421B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1118607A JP2961421B2 (en) 1989-05-15 1989-05-15 Image forming apparatus and driving method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1118607A JP2961421B2 (en) 1989-05-15 1989-05-15 Image forming apparatus and driving method thereof

Publications (2)

Publication Number Publication Date
JPH02299141A true JPH02299141A (en) 1990-12-11
JP2961421B2 JP2961421B2 (en) 1999-10-12

Family

ID=14740748

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1118607A Expired - Fee Related JP2961421B2 (en) 1989-05-15 1989-05-15 Image forming apparatus and driving method thereof

Country Status (1)

Country Link
JP (1) JP2961421B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008108640A (en) * 2006-10-26 2008-05-08 Matsushita Electric Works Ltd Thin display device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2727225B2 (en) 1989-05-15 1998-03-11 キヤノン株式会社 Electron beam source and image forming apparatus
JP2727223B2 (en) 1989-05-15 1998-03-11 キヤノン株式会社 Image forming device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008108640A (en) * 2006-10-26 2008-05-08 Matsushita Electric Works Ltd Thin display device

Also Published As

Publication number Publication date
JP2961421B2 (en) 1999-10-12

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