JPH06231674A - Electron emitting element and image forming device - Google Patents
Electron emitting element and image forming deviceInfo
- Publication number
- JPH06231674A JPH06231674A JP3245293A JP3245293A JPH06231674A JP H06231674 A JPH06231674 A JP H06231674A JP 3245293 A JP3245293 A JP 3245293A JP 3245293 A JP3245293 A JP 3245293A JP H06231674 A JPH06231674 A JP H06231674A
- Authority
- JP
- Japan
- Prior art keywords
- electron
- emitting device
- electrode
- emission
- emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は電子放出素子及び該素子
を用いた画像形成装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron-emitting device and an image forming apparatus using the device.
【０００２】[0002]
【従来の技術】従来、実用に供されてきた電子線発生源
としては、加熱によって電子線を発生する熱陰極が知ら
れている。このような熱陰極を利用した電子線発生装置
は、加熱によるエネルギーロスが大きい点、及び、予備
加熱にかなりの時間とエネルギーを要する点や熱による
系の不安定化等の問題点があった。2. Description of the Related Art Conventionally, a hot cathode that generates an electron beam by heating is known as an electron beam generating source that has been put to practical use. The electron beam generator using such a hot cathode has problems that energy loss due to heating is large, that preheating requires a considerable amount of time and energy, and that the system becomes unstable due to heat. .
【０００３】そこで、加熱によらない電子放出素子の研
究が進められており、その中のひとつに電界放出型（Ｆ
Ｅ型）の電子放出素子がある。図１２は、従来の電界放
出型電子放出素子の概略的構成図である。Therefore, research on an electron-emitting device that does not rely on heating is underway, and one of them is a field emission type (F
There is an E-type) electron-emitting device. FIG. 12 is a schematic configuration diagram of a conventional field emission electron-emitting device.
【０００４】同図に示すように、従来の電界放出型電子
放出素子は、放出素子を形成する構成基板１８１上に、
強電界を得るために先端を鋭く尖らせた陰極チップ１８
２と、基板１８１上に絶縁性材料からなる絶縁層１８３
を介して設けられ、かつ陰極チップ１８２の先端部を中
心として概円形状の開口部が形成されたグリッド電極１
８４とから構成され、陰極チップ１８２とグリッド電極
１８４との間に、グリッド電極１８４を高電位とする電
圧を印加し、電界強度の大きくなる陰極チップ１８２の
先端部から電子を放出させるものである。As shown in FIG. 1, the conventional field emission type electron-emitting device has a structure substrate 181 on which an electron-emitting device is formed.
Cathode tip 18 having a sharp tip for obtaining a strong electric field
2 and an insulating layer 183 made of an insulating material on the substrate 181.
And a grid electrode 1 having a substantially circular opening centered on the tip of the cathode chip 182.
And a voltage for making the grid electrode 184 have a high potential is applied between the cathode chip 182 and the grid electrode 184, and electrons are emitted from the tip portion of the cathode chip 182 where the electric field strength increases. .
【０００５】また、従来の電界放出型電子放出素子のひ
とつとして、特公昭４６−２０９４４号公報に開示され
ているように、トンネル効果と二次電子放出を利用した
いわゆる横形電界放出素子が知られている。As one of the conventional field emission type electron emission devices, a so-called lateral type field emission device utilizing the tunnel effect and secondary electron emission is known, as disclosed in Japanese Patent Publication No. 46-20944. ing.
【０００６】図１３はその従来の横形電界放出型素子の
構成図である。同図に示すように、従来の横形素子は、
絶縁性基板１９１と、該絶縁性基板１９１上に設けられ
た先端が突出した突端部９２を有する電子放出電極部１
９３と突端部１９２に対向した二次電子放出電極１９４
より構成され、突端部１９２と二次電子放出電極１９４
との間に電圧を印加し、強電界を生じせしめて突端１９
２の先端から電子放出を起こさせる。次に突端部１９２
から放出された電子は二次電子放出電極１９４に衝突し
て多量の二次電子を放出する。この多量に放出される二
次電子をアノード電極（不図示）によって引き出し、電
子線として応用するものである。FIG. 13 is a block diagram of the conventional lateral field emission device. As shown in the figure, the conventional horizontal element is
The electron emission electrode portion 1 having an insulating substrate 191 and a protruding end portion 92 provided on the insulating substrate 191 and having a protruding tip.
93 and a secondary electron emission electrode 194 facing the tip 192.
And a tip 192 and a secondary electron emission electrode 194.
A voltage is applied between the tip and the tip 19 to generate a strong electric field.
Electrons are emitted from the tip of 2. Next, the tip 192
The electrons emitted from the collide with the secondary electron emission electrode 194 and emit a large amount of secondary electrons. This secondary electron emitted in large quantity is extracted by an anode electrode (not shown) and applied as an electron beam.
【０００７】また、従来より、面状に展開した複数の電
子放出素子と、この電子放出素子から放出された電子線
の照射を各々受ける蛍光体ターゲットとを各々相対向さ
せた薄型の画像形成装置が存在する。これらの電子線を
用いた画像形成装置は基本的に次のような構造からな
る。Further, conventionally, a thin image forming apparatus in which a plurality of planar electron-emitting devices and phosphor targets respectively receiving the irradiation of electron beams emitted from the electron-emitting devices are opposed to each other. Exists. An image forming apparatus using these electron beams basically has the following structure.
【０００８】図１４は従来のディスプレイ装置の概略を
示すものである。２０１は基板、２０２は支持体、２０
３は素子配線電極、２０４は電子放出部、２０５は電子
通過孔、２０６は変調電極、２０７はガラス板、２０８
は画像形成部材で、例えば蛍光体、レジスト材等、電子
が衝突することにより発光、変色、帯電、変質等する部
材からなる。２０９は蛍光体の輝点である。FIG. 14 shows an outline of a conventional display device. 201 is a substrate, 202 is a support, 20
3 is an element wiring electrode, 204 is an electron emission portion, 205 is an electron passage hole, 206 is a modulation electrode, 207 is a glass plate, and 208.
Is an image forming member, and is composed of, for example, a phosphor, a resist material, or the like that emits light, changes color, charges, or deteriorates when electrons strike. Reference numeral 209 is a bright spot of the phosphor.
【０００９】ここで、電子放出部２０４は薄膜技術によ
り形成され、ガラス基板２０１とは接触することのない
中空構造をなすものである。配線電極２０３は電子放出
部材と同一の材料を用いて形成しても、別材料を用いて
形成しても良く、一般に融点が高く、電気抵抗の小さい
ものが用いられる。支持体２０２は絶縁性材料もしくは
導電性材料で形成されている。Here, the electron emitting portion 204 is formed by a thin film technique and has a hollow structure that does not come into contact with the glass substrate 201. The wiring electrode 203 may be formed of the same material as the electron emitting member or may be formed of a different material, and generally has a high melting point and a low electric resistance. The support 202 is made of an insulating material or a conductive material.
【００１０】これら電子線ディスプレイ装置は、配線電
極２０３に電圧を印加し、中空構造をなす電子放出部よ
り電子を放出させ、これら放出された電子線を情報信号
に応じて変調する変調電極２０６に電圧を印加すること
により電子を取り出し、取り出した電子を加速させ、蛍
光体２０８に衝突させるものである。また、配線電極２
０３と変調電極２０６でＸＹマトリクスを形成せしめ、
画像形成部材たる蛍光体２０８上に画像表示を行うもの
である。In these electron beam display devices, a voltage is applied to the wiring electrode 203 to cause electrons to be emitted from an electron emitting portion having a hollow structure, and a modulating electrode 206 for modulating the emitted electron beam according to an information signal. Electrons are taken out by applying a voltage, and the taken out electrons are accelerated and collide with the phosphor 208. In addition, the wiring electrode 2
03 and the modulation electrode 206 form an XY matrix,
An image is displayed on the phosphor 208 which is an image forming member.
【００１１】[0011]
【発明が解決しようとする課題】しかしながら、上述し
た図１３に示す従来の電界放出と二次電子放出を複合し
た横形電子放出素子においては、該電界放出型電子放出
素子から放出された電子が二次電子放出電極に衝突して
発生する二次電子を利用するため、従来型の電界放出と
二次電子放出を複合した電子放出素子の効率は二次電子
の放出効率によって支配される。しかし、二次電子放出
効率の高い材料を用いても、二次電子を有効に放出させ
るために必要な一次電子のエネルギーは数百ボルトであ
り、一次電子を放出する突起状の電極と二次電子放出電
極との間に数百ボルトの電圧を印加する必要があるた
め、突起状電極には極めて大きな電界が集中することに
なる。However, in the conventional lateral electron-emitting device that combines the field emission and the secondary electron emission shown in FIG. 13 described above, two electrons emitted from the field-emission electron-emitting device are generated. Since the secondary electrons generated by colliding with the secondary electron emission electrode are used, the efficiency of the conventional electron emission device that combines field emission and secondary electron emission is governed by the emission efficiency of secondary electrons. However, even if a material with high secondary electron emission efficiency is used, the energy of the primary electrons required to effectively emit the secondary electrons is several hundred volts, and the protrusion-shaped electrode that emits the primary electrons and the secondary electron Since it is necessary to apply a voltage of several hundreds of volts to the electron emission electrode, an extremely large electric field is concentrated on the protruding electrode.
【００１２】一方、上述した図１２に示す従来の電界放
出型電子放出素子は、電子放出部先端の曲率半径を少な
くとも数百Å程度と極めて微小に形成することが必要で
あり、この電子放出部先端の機械的な強度は極めて弱い
ため、従来は機械的、熱的に強靭な材料を用いて形成さ
れていた。しかし、素子駆動時の電界集中および放出電
流の集中により電子放出部先端は極めて不安定であり、
不慮の放電等により容易に電子放出部の破壊が発生す
る。従って、電子放出部先端に印加される電圧を極力小
さくすることが電界放出型電子放出素子を安定に動作さ
せるひとつの手段である。これは電界放出と二次電子放
出を複合した電子放出素子においても同様であり、前記
素子を安定動作させるためには、二次電子放出電極の印
加電圧を小さくすることが必要条件である。しかるに、
二次電子放出電極に印加する電圧を低下させることは、
二次電子放出効率をもまた低下させるため、電子放出効
率の向上と安定動作を両立させることは極めて困難であ
った。On the other hand, in the conventional field emission type electron-emitting device shown in FIG. 12 described above, it is necessary to form the tip of the electron-emitting portion with a very small radius of curvature of at least several hundred liters. Since the mechanical strength of the tip is extremely weak, it is conventionally formed using a mechanically and thermally tough material. However, the tip of the electron emission part is extremely unstable due to the concentration of the electric field and the concentration of the emission current when the device is driven,
The electron emitting portion is easily destroyed due to an accidental discharge or the like. Therefore, reducing the voltage applied to the tip of the electron emitting portion as much as possible is one means for stably operating the field emission type electron emitting device. This also applies to an electron-emitting device that combines field emission and secondary electron emission, and in order to operate the device stably, it is necessary to reduce the voltage applied to the secondary electron-emitting electrode. However,
Reducing the voltage applied to the secondary electron emission electrode is
Since the secondary electron emission efficiency is also reduced, it is extremely difficult to improve the electron emission efficiency and achieve stable operation at the same time.
【００１３】また、電界放出型電子放出素子は前述した
ように極めて微小な先端を有する突起状の電極を用いて
おり、この微小な曲率半径を有する電子放出部の先端形
状によって電子放出素子の特性、性能が支配される。し
たがって、一般的には電界放出型電子放出素子を作製す
る場合には、あらかじめ針状に形成した放出素子の先端
を更に電解研磨を行い、その後にリモルディングを行う
等の工程が必要であるが、この工程は多くの手間を要す
と共に極めて煩雑であり、さらに経験的な要素を多く含
んでいる。それ故に、機械化が難しく、製造条件にバラ
ツキを生じやすく、品質が安定しない等の問題点があっ
たため、一部を除いて、実用化されてはいなかった。更
にまた、上記複雑且つ煩雑な処理を必要とするため、従
来型の電界放出型電子放出素子を複数用いた装置は実現
されてはいなかった。Further, the field emission type electron-emitting device uses the projecting electrode having an extremely minute tip as described above, and the characteristics of the electron-emitting element depend on the tip shape of the electron-emitting portion having this minute radius of curvature. , Performance is dominated. Therefore, in general, when manufacturing a field emission electron-emitting device, a step of further electrolytically polishing the tip of the needle-shaped electron-emitting device and then performing remolding is necessary. However, this process requires a lot of labor, is extremely complicated, and includes many empirical factors. Therefore, it is difficult to mechanize, the manufacturing conditions are likely to vary, and the quality is not stable. Therefore, it has not been put into practical use except a part. Furthermore, since the above-mentioned complicated and complicated processing is required, an apparatus using a plurality of conventional field emission electron-emitting devices has not been realized.
【００１４】また、上述した電界放出型素子と二次電子
放出を組み合わせた放出素子においても、前記と同様の
問題点を有していた。Further, the above-mentioned field emission type element and the emission element combining the secondary electron emission also have the same problems as described above.
【００１５】一方、面状に展開した電子線発生装置と、
電子線の照射によって発光、変質等をする画像形成部材
からなる画像形成装置が考えられているが、この画像形
成装置の電子源として上記電界放出型電子放出素子は個
々の電子放出素子の特性を均一にすることが困難であ
り、更に電子放出させるためには１００Ｖ以上の高い電
圧を必要とするため、画像形成装置への応用は実現され
てはいない。また、電界放出と二次電子放出を複合した
電子放出素子においても上述のように効率よく電子放出
させるために必要な電圧が数百ボルトと極めて高くなる
ため画像形成装置への応用は実現されてはいない。On the other hand, an electron beam generator spread in a plane,
An image forming apparatus composed of an image forming member that emits light, deteriorates properties, etc. by irradiation with an electron beam is considered, and the field emission type electron emitting device as an electron source of this image forming device has characteristics of individual electron emitting devices. Since it is difficult to make them uniform and a high voltage of 100 V or more is required to emit electrons, application to an image forming apparatus has not been realized. Further, even in an electron-emitting device that combines field emission and secondary electron emission, the voltage required for efficient electron emission is as high as several hundreds of volts as described above, so application to an image forming apparatus is not realized. There isn't.
【００１６】本発明は、上記従来技術の問題点を解決す
るためになされたものであり、安定かつ再現性よく製造
可能であり、かつ低電圧駆動可能な電子放出素子を提供
することを目的とし、更にまたマルチ化への応用を可能
とする電子放出素子を提供することを目的とするもので
ある。The present invention has been made to solve the above-mentioned problems of the prior art, and an object thereof is to provide an electron-emitting device which can be manufactured with stability and reproducibility and which can be driven at a low voltage. Another object of the present invention is to provide an electron-emitting device that can be applied to multi-processing.
【００１７】[0017]
【課題を解決するための手段及び作用】本発明は上記課
題を解決するためになされたものであり、少なくとも、
概略平面性基板と、該基板上に設けられた突起部を有す
る電子放出電極と、前記突起部に近接し且つ相対向する
位置に設けられた電圧印加手段を有する引き出し電極と
からなる電子放出素子において、前記引き出し電極は、 その表面が導電性材料からなる超微粒子で被覆されて
いるか、又は、 その内部に、導電性材料からなる超微粒子を含有し、
且つ該電極表面に前記微粒子の少なくとも一部が露出し
ている、 ことを特徴とする電子放出素子を提供するものである。
以下において「電子放出素子Ａ」はこの発明の電子放出
素子を意味する。Means and Actions for Solving the Problems The present invention has been made to solve the above problems, and at least,
An electron-emitting device including a substantially flat substrate, an electron-emitting electrode having a protrusion provided on the substrate, and an extraction electrode having a voltage applying means provided at a position close to and opposite to the protrusion. In the above, the extraction electrode has its surface coated with ultrafine particles made of a conductive material, or contains therein ultrafine particles made of a conductive material,
At least a part of the fine particles is exposed on the surface of the electrode, and an electron-emitting device is provided.
In the following, "electron emitting device A" means the electron emitting device of the present invention.
【００１８】また、本発明は、少なくとも、概略円錐形
に加工された導電性材料からなる突起部と、該突起部と
は電気的に絶縁され且つ外部から電圧印加手段を有する
電極とからなる電界放出型電子放出素子において、該電
子放出素子の電子放出部を形成する概略円錐形に加工さ
れた突起部は、 その表面が導電性材料からなる超微粒子で被覆されて
いるか、又は、 その内部に、導電性材料からなる超微粒子を含有し、
且つ該電極表面に前記微粒子の少なくとも一部が露出し
ている、 ことを特徴とする電子放出素子を提供するものである。
以下において「電子放出素子Ｂ」はこの発明の電子放出
素子を意味する。Further, according to the present invention, an electric field comprising at least a protrusion made of a conductive material processed into a substantially conical shape, and an electrode electrically insulated from the protrusion and having a voltage applying means from the outside. In the electron-emitting type electron-emitting device, the projections that are processed into a substantially conical shape that form the electron-emitting portion of the electron-emitting device have their surfaces coated with ultrafine particles made of a conductive material, or inside thereof. , Containing ultrafine particles made of conductive material,
At least a part of the fine particles is exposed on the surface of the electrode, and an electron-emitting device is provided.
In the following, "electron emitting device B" means the electron emitting device of the present invention.
【００１９】更に本発明は、真空容器内に少なくとも上
記電子放出素子Ａ又はＢを複数面状に配置した電子放出
素子群と、該電子放出素子群から放出された電子線の照
射により画像を形成する画像形成部材からなる画像形成
装置に関するものである。Further, the present invention forms an image by irradiating an electron-emitting device group in which at least the electron-emitting devices A or B are arranged in a plurality of planes in a vacuum container and an electron beam emitted from the electron-emitting device group. The present invention relates to an image forming apparatus including an image forming member.
【００２０】＜構成＞電界放出型電子放出素子と二次電
子放出を複合したいわゆる横形電子放出素子は、電子放
出部と二次電子放出電極との間に数百ボルトの電圧を印
加し、電子放出素子から放出される電子を二次電子放出
電極に印加された電圧により加速し、加速された電子線
を二次電子放出電極に衝突させることによって発生した
二次電子を放出電子線として用いるものである。<Structure> A so-called horizontal electron-emitting device, which is a combination of a field-emission electron-emitting device and secondary electron emission, applies a voltage of several hundred volts between an electron-emitting portion and a secondary-electron-emitting electrode to generate electrons. A device in which secondary electrons generated by accelerating electrons emitted from an emission element by a voltage applied to a secondary electron emission electrode and causing the accelerated electron beam to collide with the secondary electron emission electrode are used as emission electron beams. Is.
【００２１】従って、電子放出部から電子を引き出す機
構は従来の電界効果を用いた電子放出素子と同様である
が、電子放出部から引き出した電子を二次電子放出電極
に衝突させ、二次電子を発生させる機構を具備するとこ
ろが異なり、この二次電子を発生させるためには通常数
百ボルト程度の電圧が必要となり、素子駆動電圧の上
昇、高電圧印加による電子放出部先端の破壊等不安定化
の原因となっている。Therefore, the mechanism for extracting the electrons from the electron emitting portion is the same as that of the conventional electron emitting device using the electric field effect, but the electrons extracted from the electron emitting portion are made to collide with the secondary electron emitting electrode to cause the secondary electron emission. It is different in that it is equipped with a mechanism for generating secondary electrons, and a voltage of several hundreds of volts is usually required to generate these secondary electrons, which raises the element drive voltage and causes instability such as destruction of the tip of the electron-emitting portion due to high voltage application. Is causing the change.
【００２２】そこで、本発明（電子放出素子Ａ）では従
来の電界放出型電子放出素子に相対向する引き出し電極
表面に超微粒子からなる不連続膜を設け、その超微粒子
に放出された電子線を衝突させることで効率よく電子を
取り出すことを可能とするものである。具体的には、引
き出し電極表面に、電子の平均自由行程と同等の半径を
有する超微粒子膜を設けておき、その引き出し電極に適
当な電圧を印加して電子放出部から電子を引き出すもの
である。従来の素子では、電子放出部から放出された電
子は引き出し電極に吸い取られるだけであるが、本発明
（電子放出素子Ａ）による超微粒子を引き出し電極上に
設けておくことで、超微粒子に衝突した電子の一部は向
きを変え、引き出し電極に吸い取られることなく真空中
を進行し、有効な電子線として活用することができる。Therefore, in the present invention (electron emitting device A), a discontinuous film of ultrafine particles is provided on the surface of the extraction electrode facing the conventional field emission type electron emitting device, and the electron beam emitted to the ultrafine particles is emitted. The collision makes it possible to efficiently extract electrons. Specifically, an ultrafine particle film having a radius equivalent to the mean free path of electrons is provided on the extraction electrode surface, and an appropriate voltage is applied to the extraction electrode to extract electrons from the electron emission portion. . In the conventional device, the electrons emitted from the electron emitting portion are simply absorbed by the extraction electrode. However, by providing the ultrafine particles according to the present invention (electron emitting device A) on the extraction electrode, they collide with the ultrafine particles. A part of the generated electrons can change their direction, travel in a vacuum without being absorbed by the extraction electrode, and can be utilized as an effective electron beam.
【００２３】一方、一般に、電界放出に必要な電界強度
は１０7 Ｖ／ｃｍ以上であり、この電界が印加される
と、固体中の電子がトンネル効果によって表面のポテン
シャル障壁を通り抜けて電子は真空中に放出される。こ
こで、電界効果により電子を放出する電子放出部と該電
子放出部に相対向する電極の間に印加される電圧をＶと
し、電子放出部の先端の曲率半径をｒとすると、電子放
出部の先端に生じる電界強度Ｅは Ｅ∝Ｖ／ｒ の関係にある。つまり電界放出型電子放出素子から多く
の電子を放出させる場合には、前記電子放出部先端の曲
率半径ｒを極力小さくすることが重要である。また、電
子放出部先端には、前述のように極めて大きな電界が発
生するとともに、放出部先端に電流が集中する。従っ
て、上述のような強電界下でも先端の形状を維持できる
程度の機械的、あるいは熱的安定性が要求される。On the other hand, generally, the electric field intensity required for field emission is 10 7 V / cm or more, and when this electric field is applied, the electrons in the solid pass through the potential barrier on the surface by the tunnel effect and the electrons are vacuumed. Released inside. Here, when the voltage applied between the electron emitting portion that emits electrons due to the electric field effect and the electrode facing the electron emitting portion is V and the radius of curvature of the tip of the electron emitting portion is r, the electron emitting portion The electric field strength E generated at the tip of is in the relationship of E∝V / r. That is, when many electrons are emitted from the field emission type electron-emitting device, it is important to minimize the radius of curvature r of the tip of the electron-emitting portion. Further, as described above, an extremely large electric field is generated at the tip of the electron emitting portion, and current is concentrated at the tip of the emitting portion. Therefore, mechanical or thermal stability is required to the extent that the shape of the tip can be maintained even under the strong electric field as described above.
【００２４】従来、電界放出形の電子源としては、前述
のように機械的、熱的に安定な材料を用いて電界研磨、
リモルディング等により先端を針状に加工していたがそ
の先端の曲率半径は数百Å程度が限界であり、さらに複
数の素子を均一に製造することは事実上不可能であっ
た。Conventionally, as a field emission type electron source, field polishing using a mechanically and thermally stable material as described above
The tip was processed into a needle shape by remolding, etc., but the radius of curvature of the tip was limited to several hundred Å, and it was virtually impossible to manufacture multiple devices uniformly.
【００２５】そこで、本発明（電子放出素子Ｂ）では、
従来の製造方法では実現できなかった極めて微小な曲率
半径を実現するために、電子放出部先端に超微粒子を設
けることで先端の曲率半径を超微粒子の粒径程度まで微
細化して、安定かつ再現性の良い電子放出素子を提供す
るものである。Therefore, in the present invention (electron-emitting device B),
In order to achieve an extremely small radius of curvature that could not be achieved by conventional manufacturing methods, ultrafine particles are provided at the tip of the electron emission part to reduce the radius of curvature of the tip to the particle size of the ultrafine particles, and to reproduce stably. An electron-emitting device having good properties is provided.
【００２６】本発明の電子放出素子Ａにおいて用いられ
る超微粒子は、半径が電子の平均自由行程と同等程度の
ものが理想的であり、具体的には１００Å以下程度の超
微粒子が最適であるが、これに限定されるものではなく
効率の低下はあるものの更に大きな半径（具体的には５
００Å以下）を有する微粒子もまた適用可能である。ま
た、適用できる超微粒子材料としてはＰｄ、Ａｇ、Ａ
ｕ、Ｔｉ等の金属材料、ＰｄＯ，ＳｎＯ2 等の酸化物導
電体等の超微粒子であればいかなるものを用いてもよ
い。また、その形成方法は、有機金属溶液の分散塗布、
焼成やガスデポジション法等の都合の良い方法によって
形成すれば良い。The ultrafine particles used in the electron-emitting device A of the present invention are ideally those having a radius approximately equal to the mean free path of electrons, and specifically, ultrafine particles of approximately 100 Å or less are optimal. , But it is not limited to this, but there is a decrease in efficiency, but a larger radius (specifically 5
Fine particles having a value of 00Å or less) are also applicable. Further, as applicable ultrafine particle materials, Pd, Ag, A
Any ultrafine particles such as metal materials such as u and Ti and oxide conductors such as PdO and SnO 2 may be used. In addition, the formation method, dispersion coating of an organometallic solution,
It may be formed by a convenient method such as firing or gas deposition method.
【００２７】本発明の電子放出素子Ａの主たる特徴であ
る引き出し電極表面に付設する超微粒子は、電極表面に
超微粒子が露出していることが必要条件である。従って
本発明における超微粒子は引き出し電極表面にのみ付設
するだけではなく引き出し電極内部に含有していても、
その一部が電極表面に露出していれば同等の効果があ
る。The ultrafine particles attached to the surface of the extraction electrode, which is the main feature of the electron-emitting device A of the present invention, must have the ultrafine particles exposed on the electrode surface. Therefore, even if the ultrafine particles in the present invention are contained not only in the extraction electrode surface but also in the extraction electrode,
The same effect can be obtained if a part of it is exposed on the electrode surface.
【００２８】また、突起部と引き出し電極との距離は、
０．１μｍ〜１００μｍが好ましく、引出し電極側に印
加される電圧に応じて適宜決定される。The distance between the protrusion and the lead electrode is
The thickness is preferably 0.1 μm to 100 μm, and is appropriately determined according to the voltage applied to the extraction electrode side.
【００２９】本発明の電子放出素子Ａの電子放出電極及
び引き出し電極に応用される材料としては、タングステ
ン、モリブデン、タンタル、チタン、炭素等の高融点金
属材料、ＴｉＣ，ＺｒＣ，ＨｆＣ等の金属炭化物、Ｌａ
Ｂ6 ，ＳｍＢ6 ，ＧｄＢ6 等の金属ホウ化物、ＷＳｉ
2 ，ＺｒＳｉ2 ，ＧｄＳｉ2 ，ＴｉＳｉ2 等の金属シリ
サイド、ＳｎＯ2 ，ＩＴＯ等の半導体酸化物等が挙げら
れる。Examples of materials used for the electron emission electrode and the extraction electrode of the electron emission device A of the present invention include refractory metal materials such as tungsten, molybdenum, tantalum, titanium and carbon, and metal carbides such as TiC, ZrC and HfC. , La
Metal boride such as B 6 , SmB 6 and GdB 6 , WSi
2 , metal silicide such as ZrSi 2 , GdSi 2 , and TiSi 2 , semiconductor oxide such as SnO 2 and ITO, and the like.
【００３０】一方、本発明の電子放出素子Ｂによれば、
５００Å以下の微粒子を用いることで、従来用いられて
きた先端の曲率半径数百Å程度の電子放出素子と同等以
上の特性を持つ電子放出素子を容易かつ再現性良く実現
できる。さらに、本発明の電子放出素子Ｂでは用いる微
粒子の直径を１００Å以下とすることで、従来形の電界
放出型素子はもとより最新の半導体プロセスを応用した
微細電子放出素子でも実現できない、先端の曲率半径数
十Å電界放出型電子放出素子を容易に実現することを可
能とした。On the other hand, according to the electron-emitting device B of the present invention,
By using fine particles of 500 Å or less, it is possible to easily and reproducibly realize an electron-emitting device having characteristics equal to or higher than those of the electron-emitting device having a radius of curvature of several hundred Å at the tip which has been conventionally used. Further, in the electron-emitting device B of the present invention, by setting the diameter of the fine particles to be 100 Å or less, the radius of curvature of the tip which cannot be realized not only by the conventional field emission device but also by the fine electron-emitting device applying the latest semiconductor process. It has made it possible to easily realize several tens of Å field emission electron-emitting devices.
【００３１】更に本発明の電子放出素子Ｂを用いること
により、電子放出素子の実質的な放出部、すなわち突起
部の先端の形状が、付加される超微粒子の粒径で定まる
ため、極めて均一な素子特性を有する電子放出素子を再
現性良く製造することができるようになる。したがっ
て、本発明の電子放出素子Ｂは従来極めて困難であった
線状あるいは面状に展開した電界放出型電子放出素子の
実現を容易とし更に、特性の揃った線状あるいは面状電
界放出型電子放出素子を実現するものである。Further, by using the electron-emitting device B of the present invention, the substantial emission portion of the electron-emitting device, that is, the shape of the tip of the projection is determined by the particle size of the added ultrafine particles, and therefore is extremely uniform. It becomes possible to manufacture an electron-emitting device having device characteristics with good reproducibility. Therefore, the electron-emitting device B of the present invention facilitates realization of a field-emission electron-emitting device developed in a linear or plane shape, which has been extremely difficult in the past, and further, a linear or plane field-emission electron with uniform characteristics. This is to realize an emitting device.
【００３２】本発明の電子放出素子Ｂによる超微粒子の
配置方法は、あらかじめ適当な形状に作製された電界放
出素子の表面に設ける、あるいは、放出素子を形成する
材料中に含有させる等の手法を用いれば良い。どちらの
場合でも、放出部の表面に本発明の電子放出素子Ｂにお
ける超微粒子が露出していれば得られる効果は同様であ
る。なお、超微粒子材料及び電極材料は、既に上述した
電子放出素子Ａと同様のものが使用できる。また、突起
部は概ねその曲率半径が数百Å〜数千Åが放出特性にお
いて好ましい。The method of arranging the ultrafine particles by the electron-emitting device B of the present invention includes a method of providing the ultrafine particles on the surface of a field-emission device which is produced in an appropriate shape in advance, or containing it in a material forming the emission device. You can use it. In either case, the same effect can be obtained if the ultrafine particles in the electron-emitting device B of the present invention are exposed on the surface of the emitting portion. As the ultrafine particle material and the electrode material, the same materials as those for the electron-emitting device A described above can be used. In addition, it is preferable that the protrusion has a radius of curvature of several hundred Å to several thousand Å in terms of emission characteristics.
【００３３】〈作用〉上記電子放出素子Ａの構成によれ
ば、引き出し電極表面に配置された超微粒子によって、
引き出し電極に衝突した電子が容易にその進行方向を変
え、引き出し電極に取り込まれる電子の数が減少するた
め、電子放出効率が向上する。また、従来の二次電子放
出を応用した電子放出素子に比べ低電圧での素子駆動が
可能となる。さらに、低電圧駆動が可能となるため、残
留ガスのイオン化によって起こる電子放出部表面のスパ
ッタリングによる損傷が避けられるため、放出電流の安
定化と共に長寿命化が可能となる。<Operation> According to the structure of the electron-emitting device A, the ultrafine particles arranged on the surface of the extraction electrode cause
The electrons colliding with the extraction electrode easily change their traveling directions, and the number of electrons taken into the extraction electrode is reduced, so that the electron emission efficiency is improved. In addition, the device can be driven at a lower voltage than the conventional electron-emitting device to which secondary electron emission is applied. Furthermore, since driving at a low voltage is possible, damage to the surface of the electron emission portion due to sputtering caused by ionization of the residual gas can be avoided, so that the emission current can be stabilized and the life can be extended.
【００３４】また、引き出し電極上の極めて微小な超微
粒子が電子放出効率を決めるため、従来型の二次電子放
出を応用した素子よりも引き出し電極の材料選択範囲が
広がる。更にまた、均一な粒径の超微粒子を設けること
で、放出電流が安定化するとともに、個々の放出素子の
電気的特性が均一になるため素子ごとの放出電流の均一
性が向上し、線状、面状の電子放出素子を実現できる。Further, since the extremely fine ultrafine particles on the extraction electrode determine the electron emission efficiency, the material selection range of the extraction electrode is wider than that of the conventional device applying the secondary electron emission. Furthermore, by providing ultra-fine particles with a uniform particle size, the emission current is stabilized, and the electrical characteristics of the individual emission elements are made uniform, improving the uniformity of the emission current for each element, resulting in a linear shape. A planar electron-emitting device can be realized.
【００３５】一方、上記電子放出素子Ｂの構成によれ
ば、電子放出部先端に配置された超微粒子によって、実
質的な電子放出部先端の曲率半径が超微粒子の粒径程度
まで微小となり、先端に発生する電界強度は極めて大き
くなる。そのため、従来よりも小さな電圧をグリッド電
極に印加することで従来型の電界放出型素子と同等の放
出電流を得ることができる。また、低電圧駆動が可能と
なるため、残留ガスのイオン化によって起こる電子放出
部表面のスパッタリングによる損傷が避けられるため、
放出電流の安定化と共に長寿命化が可能となる。On the other hand, according to the structure of the electron-emitting device B, due to the ultrafine particles arranged at the tip of the electron-emitting portion, the radius of curvature of the tip of the electron-emitting portion becomes substantially as small as the particle diameter of the ultrafine particle, and the tip becomes The strength of the electric field generated in the field becomes extremely large. Therefore, by applying a voltage lower than the conventional one to the grid electrode, an emission current equivalent to that of the conventional field emission device can be obtained. In addition, since it is possible to drive at a low voltage, damage due to sputtering of the surface of the electron emission portion caused by ionization of residual gas can be avoided,
The emission current can be stabilized and the life can be extended.
【００３６】また、極めて微小な超微粒子が配置される
ため、従来型の素子よりも電子放出点は極めて多くな
り、放出電流が安定化するとともに、個々の放出部の電
気的特性が均一になるため素子ごとの放出電流の均一性
が向上し、線状、面状の電子放出素子を実現できる。Further, since extremely minute ultrafine particles are arranged, the number of electron emission points becomes much larger than that of the conventional device, the emission current is stabilized, and the electric characteristics of the individual emission parts become uniform. Therefore, the uniformity of the emission current for each element is improved, and a linear or planar electron emitting element can be realized.
【００３７】[0037]
【実施例】以下、実施例により本発明を具体的に説明す
る。実施例１〜５は電子放出素子Ａに関し、実施例６〜
９は電子放出素子Ｂに関するものである。EXAMPLES The present invention will be specifically described below with reference to examples. Examples 1 to 5 relate to the electron-emitting device A, and Examples 6 to
Reference numeral 9 relates to the electron-emitting device B.
【００３８】実施例１ 図１は本発明の電子放出素子Ａの一実施形態を示す概略
的部分斜視図である。同図に示すように、絶縁性基板１
１上に通常の真空蒸着技術とフォトリソグラフィー技術
を用いてタングステンからなる突起部１２を有する電子
放出電極１３と突起部１２に強電界を発生させ、電子を
引き出すための引き出し電極１４を形成した。突起部１
２の先端は通常の横形電子放出素子と同等の形状であ
り、先端の半径はほぼ数百Åとした。次に引き出し電極
１４表面に本発明の特徴である超微粒子膜１５を形成し
た。本実施例ではパラジウムを超微粒子材料として用い
ており、その形成方法としては有機パラジウム化合物を
含む有機溶媒を回転塗布した後、大気中で焼成を行い、
超微粒子化するという手法を用いた。こうして得られた
超微粒子の粒径はほぼ５０Å程度、ほぼ１層の超微粒子
膜となっていた。また、突起部１２の先端と引き出し電
極との距離は２μｍである。 Example 1 FIG. 1 is a schematic partial perspective view showing an embodiment of an electron-emitting device A of the present invention. As shown in the figure, the insulating substrate 1
An electron emission electrode 13 having a protrusion 12 made of tungsten and an extraction electrode 14 for extracting an electron by forming a strong electric field on the protrusion 12 were formed on the substrate 1 by using a normal vacuum deposition technique and a photolithography technique. Protrusion 1
The tip of No. 2 has a shape similar to that of a normal horizontal electron-emitting device, and the radius of the tip is set to approximately several hundred Å. Next, an ultrafine particle film 15, which is a feature of the present invention, was formed on the surface of the extraction electrode 14. In this embodiment, palladium is used as the ultrafine particle material, and as a method for forming it, after spin coating an organic solvent containing an organic palladium compound, firing is performed in the atmosphere,
A method of forming ultrafine particles was used. The particle size of the ultrafine particles thus obtained was about 50Å, and the layer was an ultrafine particle film of almost one layer. The distance between the tip of the protrusion 12 and the extraction electrode is 2 μm.
【００３９】こうして得られた電子放出素子をほぼ１×
１０-7ｔｏｒｒの真空度に保たれた真空容器中に入れ、
電子放出部の鉛直上方５ｍｍの位置に直流電圧１ｋＶを
印加したアノード電極を設け、電子放出電極１３をアー
ス電位、引き出し電極１４に１ｋＨｚ、７０Ｖの三角波
電圧を印加して電子放出させたところ、アノード電極に
ピーク電流で１μＡの放出電流が測定された。この時の
電子放出電極１３と引き出し電極１４の間に流れた電流
は１ｍＡであった。The electron-emitting device obtained in this way is almost 1 ×
Place it in a vacuum container kept at a vacuum of 10 -7 torr,
An anode electrode to which a direct current voltage of 1 kV was applied was provided at a position 5 mm vertically above the electron emitting portion, the electron emitting electrode 13 was grounded, and a triangular wave voltage of 1 kHz and 70 V was applied to the extraction electrode 14 to emit electrons. An emission current of 1 μA was measured at the electrode at peak current. At this time, the current flowing between the electron emission electrode 13 and the extraction electrode 14 was 1 mA.
【００４０】また、このときの放出電流の経時変化を測
定したところ、１×１０-7ｔｏｒｒ程度の真空中でも放
出電流の変動は全放出電流の５％以内、５００時間以上
の素子寿命が確認された。Further, when the change with time of the emission current at this time was measured, it was confirmed that the variation of the emission current was within 5% of the total emission current even in a vacuum of about 1 × 10 −7 torr, and the device life was 500 hours or more. It was
【００４１】比較例１ 実施例１で作製した電子放出素子において、引き出し電
極１４の電極表面にＰｄ超微粒子を付設しない素子を同
様の条件下で電子放出させたところ、数ｎＡから十数ｎ
Ａ程度の放出電流しか得られなかった。 Comparative Example 1 In the electron-emitting device manufactured in Example 1, when a device in which Pd ultrafine particles were not attached to the electrode surface of the extraction electrode 14 was made to emit electrons under the same conditions, several nA to several tens n were obtained.
Only the emission current of about A was obtained.
【００４２】また、引き出し電極表面に、超微粒子の代
わりに二次電子放出効率の高いアルミニウム薄膜を付設
し、上記と同様の実験を行ったところ、印加電圧が１０
０Ｖ程度では数ｎＡ程度の放出電流しか得られなかった
が、印加電圧を２００Ｖ以上にしたところ急激な電流上
昇が見られた。しかるに、放出電流の増加と共に電流の
変動も大きくなり最終的には素子破壊が起こり、安定な
電子放出が得られなかった。Further, an aluminum thin film having a high secondary electron emission efficiency was attached to the surface of the extraction electrode instead of the ultrafine particles, and the same experiment as above was conducted.
At about 0 V, only an emission current of about several nA was obtained, but when the applied voltage was 200 V or more, a sharp current increase was observed. However, as the emission current increases, the variation in the current also increases, and eventually the device breaks down, and stable electron emission cannot be obtained.
【００４３】実施例２ 図２に第２の実施例で作製した電界放出型電子放出素子
Ａの概略的部分斜視図を、図３にａ−ａ断面図を示す。 Example 2 FIG. 2 shows a schematic partial perspective view of the field emission type electron-emitting device A produced in the second example, and FIG. 3 shows a sectional view taken along the line aa.
【００４４】絶縁性基板２１，３１上に実施例１同様タ
ングステンを用いた電子放出電極２３，３３を形成した
後、Ｐｄ超微粒子２５，３５を含有する導電性Ｓｉを用
いた引き出し電極２４，３４を形成し、電子放出素子を
完成した。本実施例では、本発明の特徴である超微粒子
は引き出し電極２４，３４中に含有されると共に、引き
出し電極２４，３４表面にも露出している。After forming the electron emission electrodes 23 and 33 using tungsten on the insulating substrates 21 and 31 as in Example 1, the extraction electrodes 24 and 34 using conductive Si containing the Pd ultrafine particles 25 and 35 are formed. To form an electron-emitting device. In this embodiment, the ultrafine particles, which is a feature of the present invention, are contained in the extraction electrodes 24, 34 and are also exposed on the surfaces of the extraction electrodes 24, 34.
【００４５】こうして得られた電子放出素子をほぼ１×
１０-7ｔｏｒｒ程度の真空に保たれた真空容器中に入
れ、電子放出電極２３をアース電位、引き出し電極２４
を＋５０Ｖとすることによって電子放出が確認された。
また、グリッド電圧を＋７０Ｖとした場合に、ほぼ１μ
Ａの放出電流が確認された。The electron-emitting device obtained in this manner is almost 1 ×
The electron emission electrode 23 is placed in a vacuum container kept at a vacuum of about 10 −7 torr, and the electron emission electrode 23 is grounded and the extraction electrode 24 is
The electron emission was confirmed by setting the voltage to + 50V.
When the grid voltage is + 70V, it is almost 1μ.
The emission current of A was confirmed.
【００４６】また、このときの放出電流の経時変化を測
定したところ、１×１０-7ｔｏｒｒの真空中でも実施例
１と同様に、放出電流の変動は全放出電流の５％以内で
あった。更に直流駆動による素子寿命も実施例１で作製
した電子放出素子とほぼ同等であり、本発明による超微
粒子が引き出し電極内部に含有されていてもその一部が
表面に露出されていれば、同様の効果を有していること
が示された。Further, when the change with time of the emission current at this time was measured, the variation of the emission current was within 5% of the total emission current as in Example 1 even in a vacuum of 1 × 10 −7 torr. Furthermore, the device life due to DC driving is almost the same as that of the electron-emitting device produced in Example 1. Even if the ultrafine particles according to the present invention are contained inside the extraction electrode, if a part thereof is exposed on the surface, it is the same. It was shown to have the effect of.
【００４７】実施例３ 図４は本発明の電子放出素子Ａの第３の実施例を示す概
略的部分構成図であり、図５は図４ａ−ａ断面図であ
る。同図において、４１、５１は絶縁性ガラス基板、４
２、５２は電子放出部、４３、５３は電子放出電極、４
４、５４は引き出し電極、４５、５５は本発明の特徴で
ある超微粒子である。本発明では、引き出し電極４４の
断面形状を図５に図示したごとくテーパー状に加工した
うえで超微粒子を付設したものであり、素子を構成する
部品の材料は実施例１と同様である。 Embodiment 3 FIG. 4 is a schematic partial constitutional view showing a third embodiment of the electron-emitting device A of the present invention, and FIG. 5 is a sectional view of FIG. 4a-a. In the figure, 41 and 51 are insulating glass substrates, 4
2, 52 are electron emitting portions, 43, 53 are electron emitting electrodes, 4
Reference numerals 4 and 54 are extraction electrodes, and reference numerals 45 and 55 are ultrafine particles which are a feature of the present invention. In the present invention, the cross-sectional shape of the extraction electrode 44 is processed into a taper shape as shown in FIG. 5 and ultrafine particles are added thereto, and the material of the parts constituting the element is the same as that of the first embodiment.
【００４８】また、引き出し電極をテーパー状に形成す
るため電子放出部先端に生じる電界強度は実施例１で示
した素子に比べて減少するため、電子放出部と引き出し
電極の距離を１μｍとした。Further, since the electric field strength generated at the tip of the electron emitting portion is reduced as compared with the device shown in Example 1 because the extraction electrode is formed in a tapered shape, the distance between the electron emission portion and the extraction electrode is set to 1 μm.
【００４９】こうして得られた素子を実施例１と同様の
条件下で電子放出させたところ、ほぼ５μＡの放出電流
が得られ、電子放出効率もまた向上した。When the device thus obtained was made to emit electrons under the same conditions as in Example 1, an emission current of about 5 μA was obtained and the electron emission efficiency was also improved.
【００５０】実施例４ 図６は本発明の電子放出素子Ａを用いた第４の実施例を
示す概略的部分断面図である。同図において、６１は導
電性のシリコン基板、６２は通常の半導体プロセスを応
用して作製した電子放出部、６３は電子放出部に導通を
取るための電極部分、６４は引き出し電極、６５は本発
明の特徴である超微粒子、６６は絶縁層である。本素子
においては、より多くの放出電流を得るために電子放出
部６２の上面形状を円形とし、放出部の実効長を長くす
るという手法を用いているとともに引き出し電極６４の
断面形状を図示したように実施例３と同様にテーパー状
の加工を施している。 Embodiment 4 FIG. 6 is a schematic partial sectional view showing a fourth embodiment using the electron-emitting device A of the present invention. In the figure, 61 is a conductive silicon substrate, 62 is an electron emitting portion manufactured by applying a normal semiconductor process, 63 is an electrode portion for establishing conduction with the electron emitting portion, 64 is an extraction electrode, and 65 is a book. Ultra-fine particles 66, which is a feature of the invention, are insulating layers. In this device, in order to obtain a larger emission current, the electron emission portion 62 has a circular upper surface shape and the effective length of the emission portion is lengthened, and the cross-sectional shape of the extraction electrode 64 is shown in the figure. In the same manner as in Example 3, taper processing is performed.
【００５１】上記構成を用いることで、放出電流の増大
と共に放出電流の安定化も促進され、極めて再現性の良
い電子放出素子が得られた。更にまた、電極部６３と引
き出し電極６４が積層構造にできるため素子の高密度配
置に適した電子放出素子が得られた。By using the above-described structure, the emission current is increased and the emission current is stabilized, and an electron-emitting device with extremely good reproducibility is obtained. Furthermore, since the electrode portion 63 and the extraction electrode 64 can have a laminated structure, an electron-emitting device suitable for high-density arrangement of devices can be obtained.
【００５２】実施例５ 図７は、本発明の電子放出素子Ａを用いた画像形成装置
の一実施形態を示す概略的斜視図である。同図におい
て、面状に展開した電子放出素子部分は、実施例４で作
製した電子放出素子を複数配列したものである。 Embodiment 5 FIG. 7 is a schematic perspective view showing an embodiment of an image forming apparatus using the electron-emitting device A of the present invention. In the figure, the electron-emitting device portion developed in a plane shape is an array of a plurality of the electron-emitting devices manufactured in Example 4.
【００５３】同図において、７１は導電性基板、７２は
電界放出型電子放出部、７４は引き出し電極、７６は絶
縁層、７７は電子線の変調を行うグリッド電極、７８は
電子通過孔、７９はメタルバック、７１０は蛍光体、７
１１はガラス基板、７１２は蛍光体の発光輝点である。
また、図中不図示ではあるが引き出し電極７４の表面に
は本発明の特徴である超微粒子が付設されている。In the figure, 71 is a conductive substrate, 72 is a field emission type electron emitting portion, 74 is an extraction electrode, 76 is an insulating layer, 77 is a grid electrode for modulating an electron beam, 78 is an electron passage hole, and 79. Is a metal back, 710 is a phosphor, 7
Reference numeral 11 is a glass substrate, and 712 is an emission bright spot of the phosphor.
Although not shown in the figure, ultrafine particles, which are the features of the present invention, are attached to the surface of the extraction electrode 74.
【００５４】本実施例の画像形成装置は、導電性基板７
１をアース電位とし、引き出し電極７４に＋５０〜＋７
０Ｖの電圧を印加することにより、電子放出部７２から
放出させた電子を引き出し電極７４に衝突させ、そこで
発生した電子線を５００〜１０００Ｖを印加した蛍光体
に加速、衝突させて画像を形成するものである。また、
本画像形成装置は当然ながら真空度１×１０-6〜１×１
０-7ｔｏｒｒの環境下にて動作するものである。The image forming apparatus according to this embodiment has the conductive substrate 7
1 is set to the ground potential and +50 to +7 is applied to the extraction electrode 74.
By applying a voltage of 0V, the electrons emitted from the electron emitting portion 72 collide with the extraction electrode 74, and the electron beam generated there is accelerated and collided with the phosphor applied with 500 to 1000V to form an image. It is a thing. Also,
As a matter of course, this image forming apparatus has a vacuum degree of 1 × 10 −6 to 1 × 1.
It operates under an environment of 0 -7 torr.
【００５５】本実施例の電子放出素子を用いた画像形成
装置では、以下の結果が得られた。The following results were obtained with the image forming apparatus using the electron-emitting device of this embodiment.
【００５６】（１）本実施例では、低電圧によって素子
駆動が可能となり、イオンによる電子放出素子へのダメ
ージが少なくなるため、長寿命化、発光の均一化が図ら
れた。(1) In the present embodiment, the device can be driven by a low voltage, and the damage to the electron-emitting device by ions is reduced, so that the life is extended and the light emission is made uniform.
【００５７】（２）電子放出部の実効長を長くすること
が可能となるため、低い素子駆動電圧で必要十分な放出
電流が得られる。(2) Since the effective length of the electron emitting portion can be increased, a necessary and sufficient emission current can be obtained with a low device driving voltage.
【００５８】以上、本実施例は画像形成装置についての
み説明したが、画像形成部材としては、蛍光体のほかに
レジスト材や薄膜金属のような、電子線の照射によって
状態が変化するすべての部材が含まれ、電子線応用装置
としては、記録装置、記憶装置、電子線描画装置等のさ
まざまな装置があり、本発明は電子放出素子が複数配置
された面状電子源を用いた画像形成装置であれば同等の
効果がある。Although the present embodiment has been described only with respect to the image forming apparatus, as the image forming members, all members such as resist materials and thin film metals whose state is changed by electron beam irradiation in addition to phosphors. The electron beam application device includes various devices such as a recording device, a storage device, and an electron beam drawing device. The present invention relates to an image forming device using a planar electron source in which a plurality of electron-emitting devices are arranged. If so, there is an equivalent effect.
【００５９】実施例６ 図８は本発明の電子放出素子Ｂによる電界放出型電子放
出素子の一実施形態を示す概略的部分断面図である。同
図に示すように、導電性基板１１１上に通常のフォトリ
ソグラフィー技術と斜方蒸着を応用して、タングステン
からなる円錐形状の電子放出素子電極１１２を形成し
た。円錐形状の放出素子電極１１２の底面の直径はほぼ
２μｍ、円錐の高さはほぼ３μｍである。また、円錐先
端の曲率半径はほぼ５００Åになっていた。次に、放出
素子電極１１２の表面に、有機パラジウム化合物を含む
有機溶媒（奥野製薬工業製キャタペーストＣＣＰ）を回
転塗布した後、大気中３００℃、１０分間の焼成を行
い、放出素子電極表面にＰｄ超微粒子膜１１３を膜厚１
００Å程度で形成し、粒径２０〜５０ÅのＰｄ超微粒子
で被覆されたエミッター１１４を形成した。次に、エミ
ッター１１４の先端近傍に直径１μｍの開口径を持つ貫
通孔１１５を有するグリッド電極１１６を絶縁層１１７
を介して導電性基板１１１上に形成して電子放出素子を
完成した。 Embodiment 6 FIG. 8 is a schematic partial sectional view showing an embodiment of a field emission type electron-emitting device by the electron-emitting device B of the present invention. As shown in the figure, a conical electron-emitting device electrode 112 made of tungsten was formed on the conductive substrate 111 by applying a normal photolithography technique and oblique evaporation. The diameter of the bottom surface of the conical emission element electrode 112 is approximately 2 μm, and the height of the cone is approximately 3 μm. Also, the radius of curvature of the tip of the cone was approximately 500Å. Next, an organic solvent containing an organopalladium compound (Catapaste CCP manufactured by Okuno Chemical Industries Co., Ltd.) is spin-coated on the surface of the emitting element electrode 112, and then baked at 300 ° C. for 10 minutes in the atmosphere to form a surface of the emitting element electrode. The Pd ultrafine particle film 113 has a film thickness of 1
The emitter 114 was formed with a thickness of about 00Å and covered with Pd ultrafine particles having a particle size of 20 to 50Å. Next, a grid electrode 116 having a through hole 115 having an opening diameter of 1 μm near the tip of the emitter 114 is formed on the insulating layer 117.
The electron-emitting device was completed by forming the electron-emitting device on the conductive substrate 111 via.
【００６０】こうして得られた電子放出素子を、ほぼ１
×１０-7ｔｏｒｒの真空度に保たれた真空容器中に入
れ、エミッターをアース電位とし、グリッド電極に＋５
０Ｖの直流電圧を印加したところ電子放出が確認され、
さらにグリッド印加電圧を〜７０Ｖとすると、ほぼ１μ
Ａの放出電流が得られた。また、このときの放出電流の
経時変化を測定したところ、１×１０-7ｔｏｒｒの真空
度にもかかわらず、放出電流の変動は全放出電流の５％
以内であり、極めて安定な電子放出が得られた。The electron-emitting device thus obtained has almost 1
Place in a vacuum container maintained at a vacuum of × 10 -7 torr, set the emitter to ground potential, and add +5 to the grid electrode.
Electron emission was confirmed when a DC voltage of 0 V was applied,
Further, assuming that the voltage applied to the grid is ˜70 V, it is almost 1 μm.
An emission current of A was obtained. Further, when the time-dependent change of the emission current at this time was measured, the variation of the emission current was 5% of the total emission current despite the vacuum degree of 1 × 10 −7 torr.
Within the range, extremely stable electron emission was obtained.
【００６１】また、直流駆動による素子寿命は５００時
間以上が確認されており、１×１０-7ｔｏｒｒの真空中
でもスパッタリングによる劣化が低減されていることが
確認された。Further, it was confirmed that the device life due to DC driving was 500 hours or more, and deterioration due to sputtering was reduced even in a vacuum of 1 × 10 -7 torr.
【００６２】この結果、本発明による超微粒子の付設に
よって、電界放出型電子放出素子の低電圧駆動が可能と
なり、また、放出電流が極めて安定化されることが示さ
れた。これは、本発明の主たる特徴であるところの放出
素子の先端形状を超微粒子の粒径程度にまで微細化し、
強電界を発生させるという手法によって可能となったも
のである。As a result, it has been shown that the addition of the ultrafine particles according to the present invention makes it possible to drive the field emission type electron-emitting device at a low voltage and the emission current is extremely stabilized. This is because the tip shape of the emitting device, which is the main feature of the present invention, is miniaturized to a particle size of ultrafine particles,
This was made possible by the method of generating a strong electric field.
【００６３】比較例２ 実施例６で用いた電子放出電極１１２を、いわゆる通常
の電界放出型素子として電極表面にＰｄ超微粒子を付設
しない素子とし、実施例７と同様の放出実験を行ったと
ころ、ほぼ１×１０-7ｔｏｒｒの真空中で〜１μＡの放
出電流を得るためには、グリッド電極に印加する電圧は
１００Ｖ以上必要であった。また、この時の放出電流の
変動は、３０〜４０％と極めて不安定であった。COMPARATIVE EXAMPLE 2 The electron emission electrode 112 used in Example 6 was used as a so-called ordinary field emission type element in which Pd ultrafine particles were not attached to the electrode surface, and the same emission experiment as in Example 7 was conducted. In order to obtain an emission current of ˜1 μA in a vacuum of about 1 × 10 −7 torr, the voltage applied to the grid electrode needs to be 100 V or more. The fluctuation of the emission current at this time was extremely unstable at 30 to 40%.
【００６４】実施例７ 図９に、第２の実施例で作製した電界放出型電子放出素
子Ｂの概略的部分断面図を示す。導電性基板１２１上に
粒径２０〜３０ÅのＰｄ超微粒子１２３を含有するシリ
コンを用いた円錐形状のエミッター１２４を形成した
後、実施例６と同様に、絶縁層１２６を介して開口径〜
２μｍの貫通孔を有するグリッド電極１２５を形成し、
電子放出素子を完成した。本実施例では、本発明の特徴
である超微粒子は円錐形状に形成されたエミッター１２
４中に含有されており、また、エミッター表面にも露出
している。 Example 7 FIG. 9 shows a schematic partial cross-sectional view of a field emission type electron-emitting device B manufactured in the second example. After forming a conical emitter 124 using silicon containing Pd ultrafine particles 123 having a particle size of 20 to 30 Å on the conductive substrate 121, the opening diameter through the insulating layer 126 is similar to that of the sixth embodiment.
Forming a grid electrode 125 having a through hole of 2 μm,
The electron-emitting device was completed. In this embodiment, the ultrafine particles, which is a feature of the present invention, are emitters 12 formed in a conical shape.
It is contained in No. 4 and is also exposed on the surface of the emitter.
【００６５】こうして得られた電子放出素子をほぼ１×
１０-7ｔｏｒｒ程度の真空に保たれた真空容器中に入
れ、エミッターをアース電位、グリッド電極を＋５０Ｖ
とすることによって電子放出が確認された。また、グリ
ッド電圧を＋７０Ｖとした場合に、ほぼ１μＡの放出電
流が確認された。The electron-emitting device obtained in this way is almost 1 ×
Place in a vacuum container kept at a vacuum of about 10 -7 torr, set the emitter to ground potential, and set the grid electrode to + 50V.
Then, electron emission was confirmed. Further, when the grid voltage was +70 V, an emission current of about 1 μA was confirmed.
【００６６】また、このときの放出電流の経時変化を測
定したところ、１×１０-7ｔｏｒｒの真空中でも実施例
６と同様に、放出電流の変動は全放出電流の５％以内で
あった。更に直流駆動による素子寿命も実施例６で作製
した電子放出素子とほぼ同等であり、本発明による超微
粒子がエミッター内部に含有されていてもその一部が表
面に露出されていれば、同様の効果を有していることが
示された。Further, when the change with time of the emission current at this time was measured, the variation of the emission current was within 5% of the total emission current as in Example 6 even in a vacuum of 1 × 10 −7 torr. Further, the device lifetime by direct current driving is almost the same as that of the electron-emitting device produced in Example 6, and even if the ultrafine particles according to the present invention are contained inside the emitter, if a part thereof is exposed on the surface, it is the same. It was shown to have an effect.
【００６７】実施例８ 図１０は本発明の電子放出素子Ｂの第３の実施例を示す
概略的構成図である。同図において、１３１は絶縁性ガ
ラス基板、１３２は偏向電極、１３３は絶縁層、１３４
はエミッター、１３５は本発明の特徴である超微粒子、
１３６はグリッド電極である。本実施例では、エミッタ
ー１３４とグリッド電極１３６は絶縁層上の同一面内に
形成されている。また、偏向電極１３２はエミッター１
３４から放出された電子を電子放出素子形成基板に対し
て鉛直方向に偏向するために必要な電極であり、非磁性
の金属材料であることが望ましい。本実施例では、ニッ
ケルをガラス基板１３１上に膜厚１０００Å程度で形成
した。 Embodiment 8 FIG. 10 is a schematic constitutional view showing a third embodiment of the electron-emitting device B of the present invention. In the figure, 131 is an insulating glass substrate, 132 is a deflection electrode, 133 is an insulating layer, and 134
Is an emitter, 135 is an ultrafine particle which is a feature of the present invention,
136 is a grid electrode. In this embodiment, the emitter 134 and the grid electrode 136 are formed in the same plane on the insulating layer. Further, the deflection electrode 132 is the emitter 1.
It is an electrode necessary for deflecting the electrons emitted from 34 in the vertical direction with respect to the electron-emitting device forming substrate, and is preferably a non-magnetic metal material. In this embodiment, nickel is formed on the glass substrate 131 with a film thickness of about 1000Å.
【００６８】エミッター先端の形状は通常の電界放出型
電子放出素子では極力、曲率半径を小さくする必要があ
るが、本発明で用いるエミッターは超微粒子の付加を行
うために特に微小な曲率半径を必要とはしない。また、
本実施例に用いられる電極、グリッド等の材料は、これ
までの実施例ですでに示した、さまざまな材料が応用で
きる。また、エミッターの作製方法は、通常のフォトリ
ソグラフィーあるいはＦＩＢ等、適当な方法を用いれば
良い。The shape of the tip of the emitter is required to be as small as possible in the usual field emission type electron-emitting device, but the emitter used in the present invention requires a particularly small radius of curvature in order to add ultrafine particles. Not. Also,
As the materials for the electrodes and grids used in this embodiment, various materials already shown in the above embodiments can be applied. Further, as a method for manufacturing the emitter, an appropriate method such as ordinary photolithography or FIB may be used.
【００６９】こうして得られたエミッター１３４とグリ
ッド電極１３６が同一平面上に形成された、いわゆる横
形電子放出素子の電子放出部先端に、本発明によるＡｇ
超微粒子をガスデポジション法により形成した。Ａｇ超
微粒子の粒径は、ほぼ２０〜５０Åである。The thus-obtained emitter 134 and grid electrode 136 are formed on the same plane, and the Ag according to the present invention is attached to the tip of the electron-emitting portion of a so-called horizontal electron-emitting device.
Ultrafine particles were formed by the gas deposition method. The particle size of the Ag ultrafine particles is approximately 20 to 50Å.
【００７０】本実施例で作製した電子放出素子を、１×
１０-7ｔｏｒｒ程度の真空中で電子放出させた結果、通
常の超微粒子を付設しない場合に比べ、低電圧で電子放
出が得られ、本発明が横形素子にも適用可能であること
が示された。The electron-emitting device manufactured in this example was manufactured with 1 ×
As a result of electron emission in a vacuum of about 10 −7 torr, electron emission can be obtained at a lower voltage as compared with the case where ordinary ultrafine particles are not provided, which shows that the present invention can be applied to a lateral element. It was
【００７１】実施例９ 図１１は本発明の電子放出素子Ｂを用いた画像形成装置
の一実施形態を示す概略的斜視図である。同図におい
て、面状に展開した電界放出型電子放出素子は、実施例
６で作製した電子放出素子を複数配列したものである。 Embodiment 9 FIG. 11 is a schematic perspective view showing an embodiment of an image forming apparatus using the electron-emitting device B of the present invention. In the figure, the field emission type electron-emitting device expanded in a plane is a plurality of the electron-emitting devices manufactured in Example 6 arranged.
【００７２】同図において、１４１は導電性基板、１４
２はＰｄ超微粒子を表面に付設したエミッター、１４３
はエミッターから電子を引き出し、更にＯＮ−ＯＦＦを
行うグリッド電極、１４４は電子通過孔、１４５はメタ
ルバック、１４６は蛍光体、１４７はガラス基板、１４
８は蛍光体の発光輝点である。In the figure, 141 is a conductive substrate, and 14 is a conductive substrate.
2 is an emitter having Pd ultrafine particles attached to its surface, 143
Is a grid electrode that draws electrons from the emitter and further turns them on and off, 144 is an electron passage hole, 145 is a metal back, 146 is a phosphor, 147 is a glass substrate, 14
Reference numeral 8 is a luminous spot of the phosphor.
【００７３】本実施例の画像形成装置は、導電性基板１
４１をアース電位とし、グリッド電極１４３に＋５０〜
＋７０Ｖの電圧を印加することにより、エミッター１４
２から電子を放出させて５００〜１０００Ｖを印加した
蛍光体に放出された電子を衝突させて、画像を形成する
ものである。また、本画像形成装置は当然ながら真空度
１×１０-6〜１×１０-7ｔｏｒｒの環境下にて動作する
ものである。The image forming apparatus according to this embodiment has the conductive substrate 1
41 is set to the ground potential, and the grid electrode 143 is +50 to
By applying a voltage of + 70V, the emitter 14
An electron is emitted from No. 2 and the emitted electron collides with the phosphor applied with 500 to 1000 V to form an image. The image forming apparatus naturally operates under an environment of a vacuum degree of 1 × 10 −6 to 1 × 10 −7 torr.
【００７４】本実施例の電子放出素子を用いた画像形成
装置では、以下の結果が得られた。The following results were obtained with the image forming apparatus using the electron-emitting device of this example.
【００７５】（１）本実施例では、低電圧によって素子
駆動が可能となり、イオンによる電子放出素子へのダメ
ージが少なくなるため、長寿命化、発光の均一化が図ら
れた。(1) In this embodiment, the device can be driven by a low voltage, and the damage to the electron-emitting device by ions is reduced, so that the life is extended and the light emission is made uniform.
【００７６】（２）残留ガス吸着の影響を受けにくくな
るため、通常の電界放出型素子に比べ、低い真空度での
動作が可能となった。(2) Since it is less likely to be affected by residual gas adsorption, it is possible to operate at a lower degree of vacuum than a normal field emission device.
【００７７】以上、本実施例は画像形成装置についての
み説明したが、本発明の電子放出素子Ａに係る実施例５
で述べたのと同様に種々の電子線応用装置に適用でき
る。Although only the image forming apparatus has been described in the present embodiment, the fifth embodiment according to the electron-emitting device A of the present invention has been described.
It can be applied to various electron beam application devices in the same manner as described above.
【００７８】[0078]
【発明の効果】以上説明したように電子放出素子の引き
出し電極表面に超微粒子を付設する、あるいは引き出し
電極内部に超微粒子を含有することにより以下の効果が
ある。As described above, the following effects can be obtained by attaching ultrafine particles to the surface of the extraction electrode of the electron-emitting device or by containing ultrafine particles inside the extraction electrode.
【００７９】（１）超微粒子の付加により電子放出素子
の素子駆動電圧を低減することができる。(1) The device driving voltage of the electron-emitting device can be reduced by adding ultrafine particles.
【００８０】（２）超微粒子の付加によって、安定かつ
再現性の良い電子放出素子を提供できる。(2) By adding ultrafine particles, it is possible to provide a stable and reproducible electron-emitting device.
【００８１】（３）超微粒子の付加によって、放出電流
を安定化できる。(3) The emission current can be stabilized by adding ultrafine particles.
【００８２】（４）電界放出型素子の、マルチ化、面状
配置化を可能とする。(4) It is possible to make the field emission device multi-layered and arranged in a plane.
【００８３】（５）電界放出型素子の画像形成装置への
応用を可能とし、均一な画像表示を行う画像形成装置を
提供できる。(5) The field emission device can be applied to an image forming apparatus, and an image forming apparatus capable of uniform image display can be provided.
【００８４】また、従来型の電界放出型電子放出素子に
超微粒子を付設することによって、以下の効果がある。The following effects can be obtained by attaching ultrafine particles to the conventional field emission type electron-emitting device.
【００８５】（１）均一な特性を有する電界放出型電子
放出素子を実現できる。(1) A field emission type electron emitting device having uniform characteristics can be realized.
【００８６】（２）電界放出型電子放出素子の素子駆動
電圧を低減することができる。(2) The device driving voltage of the field emission type electron-emitting device can be reduced.
【００８７】（３）超微粒子の付加によって、安定かつ
再現性の良い電子放出素子を提供できる。(3) By adding ultrafine particles, a stable and reproducible electron-emitting device can be provided.
【００８８】（４）超微粒子の付加によって、放出電流
を安定化できる。(4) The emission current can be stabilized by adding ultrafine particles.
【００８９】（５）電界放出型素子の、マルチ化、面状
配置化を可能とする。(5) It is possible to make the field emission device multi-layered and arranged in a plane.
【００９０】（６）電界放出型素子の画像形成装置への
応用を可能とし、均一な画像表示を行う画像形成装置を
提供できる。(6) The field emission device can be applied to an image forming apparatus, and an image forming apparatus capable of uniform image display can be provided.
【図１】本発明の電子放出素子Ａの特徴を示す電子放出
素子の構成図である。FIG. 1 is a configuration diagram of an electron-emitting device showing the features of an electron-emitting device A of the present invention.
【図２】本発明の電子放出素子Ａの第２の実施例を示す
図である。FIG. 2 is a diagram showing a second embodiment of the electron-emitting device A of the present invention.
【図３】図２のａ−ａ断面図である。FIG. 3 is a sectional view taken along line aa of FIG.
【図４】本発明の電子放出素子Ａの第３の実施例を示す
図である。FIG. 4 is a diagram showing a third embodiment of the electron-emitting device A of the present invention.
【図５】図４のａ−ａ断面図である。5 is a sectional view taken along the line aa of FIG.
【図６】本発明の電子放出素子Ａの第４の実施例を示す
図である。FIG. 6 is a diagram showing a fourth embodiment of the electron-emitting device A of the present invention.
【図７】本発明の電子放出素子Ａを用いた画像形成装置
の構成図である。FIG. 7 is a configuration diagram of an image forming apparatus using the electron-emitting device A of the present invention.
【図８】本発明の特徴を示す電子放出素子Ｂの構成図で
ある。FIG. 8 is a configuration diagram of an electron-emitting device B showing the characteristics of the present invention.
【図９】本発明の電子放出素子Ｂの第２の実施例を示す
図である。FIG. 9 is a diagram showing a second embodiment of the electron-emitting device B of the present invention.
【図１０】実施例８で作製した平面型電子放出素子の構
成図である。FIG. 10 is a configuration diagram of a flat panel electron-emitting device manufactured in Example 8.
【図１１】本発明による電子放出素子Ｂを用いた画像形
成装置の構成図である。FIG. 11 is a configuration diagram of an image forming apparatus using the electron-emitting device B according to the present invention.
【図１２】従来型の電界放出型電子放出素子の構成図で
ある。FIG. 12 is a configuration diagram of a conventional field emission electron-emitting device.
【図１３】従来型の平面型電子放出素子の構成図であ
る。FIG. 13 is a configuration diagram of a conventional planar electron-emitting device.
【図１４】従来型電子源を用いた画像形成装置の構成図
である。FIG. 14 is a configuration diagram of an image forming apparatus using a conventional electron source.
１１，２１，３１，４１，５１，６１，７１，８１，９
１，２０１ 素子形成基板 １２，２２，３２，４２，５２，６２，７２，８２，９
２，２０４ 電子放出部 １３，２３，３３，４３，５３，６３，９３ 電子放出
電極 １４，２４，３４，４４，５４，６４，７４ 放出部に
対向する引き出し電極 １５，２５，３５，４５，５５，６５ 超微粒子 ７８，２０５ 電子通過孔 ７７，８４，２０６ グリッド電極 ６６，７６，８３ 絶縁層 ７１０，２０８ 蛍光体 ７９ メタルバック ７１１，２０７ ガラス基板 ７１２，２０９ 発光輝点 ２０２ 支持体 ２０３ 素子配線電極 １１１，１２１，１３１，１４１，１５１，１６１，１
７１ 素子形成基板 １１２，１２２，１３４，１４２，１５２，１６３ 電
子放出素子 １１３，１２３，１３５ 超微粒子 １１４，１２４，１３４，１４２ 超微粒子を付加した
電子放出素子 １１５，１４４ 電子通過孔 １１６，１２５，１３６，１４３，１５４ グリッド電
極 １１７，１２６，１３３，１５３ 絶縁層 １３２ 偏向電極 １４５ 蛍光体 １４６ メタルバック １４７ ガラス基板 １４８ 発光輝点11, 21, 31, 41, 51, 61, 71, 81, 9
1,201 Element formation substrate 12,22,32,42,52,62,72,82,9
2,204 electron emission part 13,23,33,43,53,63,93 electron emission electrode 14,24,34,44,54,64,74 extraction electrode 15,25,35,45 facing the emission part 55,65 Ultrafine particles 78,205 Electron passing holes 77,84,206 Grid electrode 66,76,83 Insulating layer 710,208 Fluorescent material 79 Metal back 711,207 Glass substrate 712,209 Luminous bright spot 202 Support 203 Element wiring Electrodes 111, 121, 131, 141, 151, 161, 1
71 Device forming substrate 112, 122, 134, 142, 152, 163 Electron emitting device 113, 123, 135 Ultrafine particle 114, 124, 134, 142 Electron emitting device 115, 144 Electron passing hole 116, 125 with ultrafine particles added 136, 143, 154 Grid electrode 117, 126, 133, 153 Insulating layer 132 Deflection electrode 145 Phosphor 146 Metal back 147 Glass substrate 148 Luminescent bright spot
フロントページの続き (72)発明者 野村 一郎 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 (72)発明者 岩井 久美 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 (72)発明者 坂野 嘉和 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内Front page continuation (72) Inventor Ichiro Nomura 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Kumi Iwai 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Yoshikazu Sakano 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc.
Claims (9)
上に設けられた突起部を有する電子放出電極と、前記突
起部に近接し且つ相対向する位置に設けられた電圧印加
手段を有する引き出し電極とからなる電子放出素子にお
いて、前記引き出し電極表面が、導電性材料からなる超
微粒子で被覆されていることを特徴とする電子放出素
子。1. A drawer having at least a substantially flat substrate, an electron-emitting electrode having a protrusion provided on the substrate, and a voltage applying unit provided at a position close to and opposite to the protrusion. An electron-emitting device comprising an electrode, wherein the extraction electrode surface is covered with ultrafine particles made of a conductive material.
粒子の直径が５００Å以下であることを特徴とする請求
項１に記載の電子放出素子。2. The electron-emitting device according to claim 1, wherein the ultrafine particles attached to the surface of the extraction electrode have a diameter of 500 Å or less.
上に設けられた突起部を有する電子放出電極と、前記突
起部に近接し且つ相対向する位置に設けられた電圧印加
手段を有する引き出し電極とからなる電子放出素子にお
いて、前記引き出し電極内部に、導電性材料からなる超
微粒子を含有し、且つ該引き出し電極表面に前記超微粒
子の少なくとも一部が露出していることを特徴とする電
子放出素子。3. A drawer having at least a substantially flat substrate, an electron-emitting electrode having a protrusion provided on the substrate, and a voltage applying unit provided at a position close to and opposite to the protrusion. In an electron-emitting device including an electrode, the extraction electrode contains ultrafine particles made of a conductive material, and at least a part of the ultrafine particles is exposed on a surface of the extraction electrode. Emissive element.
粒子の直径が５００Å以下であることを特徴とする請求
項３に記載の電子放出素子。4. The electron-emitting device according to claim 3, wherein the ultrafine particles contained in the extraction electrode have a diameter of 500 Å or less.
４のいずれかに記載の電子放出素子を複数配置した面状
電子源と、該電子源から放出された電子の照射により画
像を形成する画像形成部材とを設けたことを特徴とする
画像形成装置。5. A planar electron source in which a plurality of electron-emitting devices according to claim 1 are arranged in a vacuum container, and an image is formed by irradiation of electrons emitted from the electron source. An image forming apparatus comprising an image forming member.
電性材料からなる突起部と、該突起部とは電気的に絶縁
され且つ外部から電圧印加手段を有する電極とからなる
電子放出素子において、該電子放出素子の電子放出部を
形成する概略円錐形に加工された突起部の表面が、導電
性材料からなる超微粒子で被覆されていることを特徴と
する電子放出素子。6. An electron-emitting device comprising at least a protrusion made of a conductive material processed into a substantially conical shape, and an electrode electrically insulated from the protrusion and having a voltage applying means from the outside, An electron-emitting device, characterized in that the surface of the projection, which is formed into a substantially conical shape, forming the electron-emitting portion of the electron-emitting device is coated with ultrafine particles made of a conductive material.
が５００Å以下であることを特徴とする請求項６に記載
の電子放出素子。7. The electron-emitting device according to claim 6, wherein the ultrafine particles made of the conductive material have a diameter of 500 Å or less.
電性材料からなる突起部と、該突起部とは電気的に絶縁
され且つ外部から電圧印加手段を有する電極とからなる
電子放出素子において、該電子放出素子の電子放出部を
形成する概略円錐形に加工された突起部内に、導電性材
料からなる超微粒子を含有し、且つ該突起部表面に前記
微粒子の少なくとも一部が露出していることを特徴とす
る電子放出素子。8. An electron-emitting device comprising at least a protrusion made of a conductive material processed into a substantially conical shape, and an electrode electrically insulated from the protrusion and having a voltage applying means from the outside, Ultra-fine particles made of a conductive material are contained in the projections formed into a substantially conical shape forming the electron-emitting portion of the electron-emitting device, and at least a part of the particles is exposed on the surface of the projections. An electron-emitting device characterized by the above.
８に記載の電子放出素子を複数配置した面状電子源と、
該電子源から放出された電子の照射によって画像を形成
する画像形成部材とを設けたことを特徴とする画像形成
装置。9. A planar electron source in which at least a plurality of electron-emitting devices according to claim 6 are arranged in a vacuum container,
An image forming apparatus, comprising: an image forming member that forms an image by irradiation of electrons emitted from the electron source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3245293A JP3198362B2 (en) | 1993-01-29 | 1993-01-29 | Electron emitting device and image forming apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3245293A JP3198362B2 (en) | 1993-01-29 | 1993-01-29 | Electron emitting device and image forming apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06231674A true JPH06231674A (en) | 1994-08-19 |
| JP3198362B2 JP3198362B2 (en) | 2001-08-13 |
Family
ID=12359365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3245293A Expired - Fee Related JP3198362B2 (en) | 1993-01-29 | 1993-01-29 | Electron emitting device and image forming apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3198362B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6762541B1 (en) | 1999-05-14 | 2004-07-13 | Kabushiki Kaisha Toshiba | Electron-emitting device and production process thereof |
| KR100480771B1 (en) * | 2000-01-05 | 2005-04-06 | 삼성에스디아이 주식회사 | Field emission device and the fabrication method thereof |
| JP2012142267A (en) * | 2010-12-31 | 2012-07-26 | Qinghua Univ | Field emission cathode element and field emission display device including the same |
-
1993
- 1993-01-29 JP JP3245293A patent/JP3198362B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6762541B1 (en) | 1999-05-14 | 2004-07-13 | Kabushiki Kaisha Toshiba | Electron-emitting device and production process thereof |
| KR100480771B1 (en) * | 2000-01-05 | 2005-04-06 | 삼성에스디아이 주식회사 | Field emission device and the fabrication method thereof |
| JP2012142267A (en) * | 2010-12-31 | 2012-07-26 | Qinghua Univ | Field emission cathode element and field emission display device including the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3198362B2 (en) | 2001-08-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6283812B1 (en) | Process for fabricating article comprising aligned truncated carbon nanotubes | |
| JP3734530B2 (en) | Planar cold cathode electron emitter and field emission device | |
| JP3745844B2 (en) | Electron tube | |
| US7473154B2 (en) | Method for manufacturing carbon nanotube field emission display | |
| JP2003263951A (en) | Field emission type electron source and driving method | |
| US3374386A (en) | Field emission cathode having tungsten miller indices 100 plane coated with zirconium, hafnium or magnesium on oxygen binder | |
| JP2809129B2 (en) | Field emission cold cathode and display device using the same | |
| US7696680B2 (en) | Field emission device for high resolution display | |
| US5965977A (en) | Apparatus and method for light emitting and cold cathode used therefor | |
| JP2006502555A (en) | Barrier metal layer of carbon nanotube flat panel display | |
| JP4667031B2 (en) | Manufacturing method of electron-emitting device, and manufacturing method of electron source and image display device using the manufacturing method | |
| JP2629521B2 (en) | Electron gun and cathode ray tube | |
| US5866975A (en) | Low-temperature cathode having an emissive nanostructure | |
| US20050236961A1 (en) | Triode type field emission display with high resolution | |
| JP2003323855A (en) | Image formation device | |
| JPH06231674A (en) | Electron emitting element and image forming device | |
| Itoh et al. | Investigation of cathodoluminescent display device with field emission cathodes | |
| US6836066B1 (en) | Triode field emission display using carbon nanobtubes | |
| JPH09204880A (en) | Electron gun and cathode ray tube using the same | |
| US6144145A (en) | High performance field emitter and method of producing the same | |
| JP3305168B2 (en) | Electron beam generator and image forming apparatus using the same | |
| JP2795184B2 (en) | Display device | |
| JP3305169B2 (en) | Electron beam generator and image forming apparatus using the same | |
| JP2610414B2 (en) | Display device | |
| JP2004087158A (en) | Display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20010508 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080615 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090615 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090615 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100615 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110615 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120615 Year of fee payment: 11 |
|
| LAPS | Cancellation because of no payment of annual fees |