JPH02296763A - Production of porcelain - Google Patents
Production of porcelainInfo
- Publication number
- JPH02296763A JPH02296763A JP1117264A JP11726489A JPH02296763A JP H02296763 A JPH02296763 A JP H02296763A JP 1117264 A JP1117264 A JP 1117264A JP 11726489 A JP11726489 A JP 11726489A JP H02296763 A JPH02296763 A JP H02296763A
- Authority
- JP
- Japan
- Prior art keywords
- porcelain
- ceramic
- grain growth
- grain
- molded body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052573 porcelain Inorganic materials 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000000919 ceramic Substances 0.000 claims abstract description 32
- 239000000126 substance Substances 0.000 claims abstract description 16
- 238000007639 printing Methods 0.000 claims abstract description 14
- 239000011159 matrix material Substances 0.000 claims abstract description 6
- 238000005245 sintering Methods 0.000 claims abstract 2
- 230000001737 promoting effect Effects 0.000 claims description 11
- 238000010304 firing Methods 0.000 claims description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- LEDMRZGFZIAGGB-UHFFFAOYSA-L strontium carbonate Chemical compound [Sr+2].[O-]C([O-])=O LEDMRZGFZIAGGB-UHFFFAOYSA-L 0.000 abstract description 3
- 229910000018 strontium carbonate Inorganic materials 0.000 abstract description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 description 16
- 239000002245 particle Substances 0.000 description 11
- 239000000203 mixture Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000395 magnesium oxide Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000011224 oxide ceramic Substances 0.000 description 2
- 229910052574 oxide ceramic Inorganic materials 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910010252 TiO3 Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、同−素体内に異なった粒径を有する部位をも
つ複合化された磁器製造法に関し、特に当該部位の粒成
長を、粒成長促進物質を塗布及び／又は印刷することで
実現する磁器製造法に関するものである。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a method for manufacturing composite porcelain that has regions with different grain sizes within the same element, and in particular, to control the grain growth of the regions. The present invention relates to a porcelain manufacturing method realized by coating and/or printing a growth promoting substance.
［従来の技術］
近年、酸化アルミニウムや酸化ジルコニウム等のような
酸化物系セラミックスや、炭化ケイ素。[Prior Art] In recent years, oxide ceramics such as aluminum oxide and zirconium oxide, and silicon carbide have been used.
窒化ケイ素、サイアロン等のケイ化物系セラミックスを
用いた磁器構造物が実用化されている。Porcelain structures using silicide ceramics such as silicon nitride and sialon have been put into practical use.
特にケイ化物系セラミックスには、高温強度が大きいこ
と、高温での耐酸化性が優れていること等の利点があり
、高温ガスタービン部品や自動車エンジン部品等の高温
雰囲気でも使用され得る構造物として幅広い応用が期待
されている。In particular, silicide-based ceramics have advantages such as high high-temperature strength and excellent oxidation resistance at high temperatures, and are suitable for structures that can be used in high-temperature environments such as high-temperature gas turbine parts and automobile engine parts. It is expected to have a wide range of applications.
しかしながら、これら従来のセラミックス構造物には、
加工上及び取扱上不可避な表面傷を生ずると、外部応力
が集中してこわれやすく、信頼性に欠ける点があった。However, these conventional ceramic structures have
When surface scratches are generated that are unavoidable during processing and handling, external stress is concentrated and the product tends to break, resulting in a lack of reliability.
これらの欠点を解消するための方法として、従来から種
々の方法が提案されている。Various methods have been proposed to overcome these drawbacks.
例えば、セラミックスの表面に、石英ガラスのような熱
膨張係数の小さな層を設け、常温でこの層に圧縮応力が
加わることを利用して、表面傷の影響を軽減し、高強度
化、高信頼化を図ることが提案されている。For example, by creating a layer with a small coefficient of thermal expansion such as quartz glass on the surface of ceramics, and taking advantage of the fact that compressive stress is applied to this layer at room temperature, the effect of surface scratches can be reduced, resulting in higher strength and reliability. It has been proposed to improve the
また特開昭８１−１８８２５７号公報には、第３図のセ
ラミックス構造物のｍ織構造説明図に示されるように、
■使用時に外部応力を受ける構造物の表面層１１を構成
するセラミックス粒子の粒径が構造物内部１２を構成す
るセラミックス粒子という限定された領域について、か
つ
０粒径が構造物内部を構成するセラミックス粒子の粒径
よりも大きいという限定された条件で、任意の部位を任
意の程度粒成長を促進させたセラミックス構造物が開示
されている。Furthermore, as shown in Fig. 3, which is an explanatory diagram of the M-woven structure of a ceramic structure, Japanese Patent Application Laid-open No. 81-188257 describes the following: For a limited area of ceramic particles whose particle size constitutes the inside of the structure 12, and under the limited condition that the zero particle size is larger than the particle size of the ceramic particles that constitute the inside of the structure, any part can be arbitrarily selected. A ceramic structure is disclosed that has accelerated grain growth to a degree of .
また原料組成あるいは粒径が異なるセラミックスを任意
の部位に埋め込むことにより、異なる粒構造を同一素体
に実現する方法も知られている。Also known is a method of realizing different grain structures in the same element by embedding ceramics with different raw material compositions or grain sizes in arbitrary parts.
一方、電子セラミックスでは、磁器素体の任意の部位に
対して、素体粒径を積極的に制御するというより、むし
ろ均一な粒構造を持たせるべく、原料組成、焼成温度・
焼成雰囲気等の変動に鈍感な組成系を見出すこと、成る
いは、高純度な原料を用い不均一化を防ぐこと等に努力
が払われている。On the other hand, in electronic ceramics, the raw material composition, firing temperature, and
Efforts are being made to find a composition system that is insensitive to changes in the firing atmosphere, or to prevent non-uniformity by using highly pure raw materials.
［発明が解決しようとする課８］
しかしながら、従来の上記の特開昭６１−１８８２５７
号公報に開示されるような赤外線イメージ炉による方法
では、任意の部位に粒成長させることは困難である。[Problem 8 to be solved by the invention] However, the above-mentioned conventional Japanese Patent Application Laid-Open No. 61-188257
With the method using an infrared image furnace as disclosed in the above publication, it is difficult to cause grain growth to occur at any desired location.
またレーザ光による方法では、コスト増となるとともに
、処理能力が小さいため量産化には不向きである。Furthermore, the method using laser light increases costs and has a small processing capacity, making it unsuitable for mass production.
また、埋め込みによる方法は、工程が複雑となってしま
うという問題点がある。例えば、乾粉成形においては、
−度合型にて埋め込む部位を凹とした成形体を作成した
後、その部位に、組成あるいは粒径が異なる他の原料を
いれ再成型しなげればならない。Furthermore, the embedding method has a problem in that the process becomes complicated. For example, in dry powder molding,
- After creating a molded body with a concave part to be embedded using a degree mold, another raw material with a different composition or particle size must be added to that part and then re-molded.
さらに前記の特開昭８１−１８６２５７号公報に開示さ
れるようなセラミック構造体では、構造物表面１１が構
造物内部１２より粒径が大きいことのみに限定している
ので、構造物表面において、各部位ごとに構造物内部に
比較して任意の程度成長させることによる複合化につい
ては提案されていない。Furthermore, in the ceramic structure disclosed in the above-mentioned Japanese Patent Application Laid-Open No. 81-186257, the grain size is limited to the surface 11 of the structure being larger than the inside 12 of the structure. No proposal has been made for compounding by growing each part to an arbitrary degree compared to the inside of the structure.
またそれに伴う収縮、伸長を積極的に利用することによ
る成型についても示されていない。Furthermore, there is no indication of molding that actively utilizes the shrinkage and elongation associated with this.
即ち、本発明の目的は、鋳込み、射出成型、金型成型、
押出し、ドクターブレード等の従来法で作られたセラミ
ックス構造体の成形体に、任意の当該部位の粒成長を粒
成長促進物質を印刷・塗布し焼結することにより、同−
素体内に異なった粒径を有する部位をもつ複合化された
磁器の製造方法を提供することにある。That is, the purpose of the present invention is to apply casting, injection molding, mold molding,
A ceramic structure molded body made by conventional methods such as extrusion or doctor blading can be printed and coated with a grain growth promoting substance to reduce grain growth in any desired area and then sintered.
The object of the present invention is to provide a method for manufacturing composite porcelain having portions with different particle sizes within the body.
また、電子デバイスに係る磁器素体に粒成長促進部分を
積極的に導入する磁器製造法を提供するものである。The present invention also provides a method for manufacturing porcelain that actively introduces a grain growth promoting portion into a porcelain body used in an electronic device.
［課題を解決するための手段］
本発明は、セラミックスの製造法において、焼成前に、
磁器成形体の任意の部位に、セラミックス粒の成長促進
物質を該セラミックス表面に塗布及び／又は印刷し、焼
結することにより、該セラミックス母相に比べ粒径の大
きい領域を生じさせることを特徴とする磁器製造法であ
る。[Means for Solving the Problems] The present invention provides a method for manufacturing ceramics in which, before firing,
A ceramic grain growth-promoting substance is coated and/or printed on the surface of the ceramic in any part of the porcelain molded body, and then sintered to create a region with a larger grain size than the ceramic matrix. This is a method of manufacturing porcelain.
そして前記磁器製造法において、 セラミックス粒の成長促進物質として、ＭｇＯ。And in the porcelain manufacturing method, MgO as a growth promoting substance for ceramic grains.
ＺｒＯ、ＴｉＯ、ＳｒＣＯ３から選ばれた１種又は２種
以上を用いることを特徴とし、さらに、磁器としては、
Ａｇ Ｏ，５ｒＴｉ０ 、ＺｒＯＳＭｇＯ，ＳｉＣ，
５Ｌ３Ｎ４、サイアロンから選ばれた１種又は２種以上
を用いることを特徴とする磁器製造法である。It is characterized by using one or more selected from ZrO, TiO, and SrCO3, and further, as the porcelain,
AgO, 5rTi0, ZrOSMgO, SiC,
This is a porcelain manufacturing method characterized by using one or more selected from 5L3N4 and Sialon.
［作用］
本発明の磁器製造法は、焼成前の磁器成形体の任意の部
位に粒成長促進物質を、表面に塗布及び／又は印刷する
ことで、該粒成長促進物質が昇温過程において、一部拡
散し母相とは異なる化学組成をもつ部位を見掛は上、生
じさせることにより、粒径の大きい領域を生じさせるも
のである。[Function] In the porcelain manufacturing method of the present invention, a grain growth promoting substance is coated and/or printed on the surface of any part of the porcelain molded body before firing, so that the grain growth promoting substance is absorbed during the heating process. By partially diffusing and creating the appearance of a region having a chemical composition different from that of the matrix, a region with a large particle size is created.
特に塗布印刷する粒成長促進物質を選択したり、またそ
の量を濃度又は回数を選択することにより、塗布印刷す
る部位での粒径をコントロールすることを可能とする。In particular, by selecting the grain growth promoting substance to be coated and printed, and by selecting its amount, concentration, or number of times, it is possible to control the grain size at the part to be coated and printed.
またセラミックス粒の成長促進物質として、Ｍｇｏ、Ｚ
ｒＯ、ＴｉＯ、ＳｒＣＯ３から選ばれた１種又は２種以
上を塗布及び／又は印刷という手段を用いることにより
印刷物質、その濃度、印刷回数等を適宜選択することに
より、任意の部位を任意の程度、上記物質を付着させる
ことが可能である。In addition, Mgo, Z
By coating and/or printing one or more selected from rO, TiO, and SrCO3, any part can be printed to any extent by appropriately selecting the printing material, its concentration, the number of times of printing, etc. , it is possible to deposit the above substances.
次に本発明の実施例について述べる。Next, examples of the present invention will be described.
［実施例］
［実施例１］
第１図は、本発明を適用した場合の磁器構造体の組織を
模式図である。[Example] [Example 1] FIG. 1 is a schematic diagram of the structure of a porcelain structure to which the present invention is applied.
まずＳｒ／ＴＩ比が０．９５８６であるチタン酸ストロ
ンチウム系粒界型半導体コンデンサー磁器成形体の表面
に、ＴｌＯ２を５重量％、ポリビニルアルコール（ＰＶ
Ａ）を１０重量％を純水に分散したペーストを１ ｍｍ
間隔に約０ 、２ ｍｍ角に印刷し、１４５０℃、５時
間、不活性雰囲気下で焼成することにより、第１図に示
すように、辺が約０．５ｍｍ角の粒径が、■の母相２０
−に比べ大きい５０〜１５０−粒径の粒成長した領域Ｉ
を得た。First, 5% by weight of TlO2 and polyvinyl alcohol (PV
A 1 mm thick paste of 10% by weight of A) dispersed in pure water
By printing at intervals of about 0.2 mm square and baking in an inert atmosphere at 1450°C for 5 hours, the grain size with sides of about 0.5 mm square is as shown in Figure 1. Matrix 20
Region I with grain growth of 50-150- grain size larger than -
I got it.
この後、粒界絶縁物を拡散後、粒成長領域上に、ｌｌｌ
１［１間隔に辺が約０．５ｍｍの正方形に電極を印刷し
た。After this, after diffusing the grain boundary insulator, lll
1 [Electrodes were printed in squares with sides of about 0.5 mm at 1 interval.
この方法により、
交流ピーク間電位差ＩＫＩＩＺ、ＩＶＰ−Ｐにて、通常
は−３ｄＢ程度あるのがこの実施例では、−２０ｄＢ以
下となる。With this method, the AC peak-to-peak potential difference IKIIZ, IVP-P, which is normally about -3 dB, becomes -20 dB or less in this embodiment.
即ちこの方法により、隣接するキャパシター間のクロス
トークがないアレイ型コンデンサーを得た。That is, by this method, an array type capacitor without crosstalk between adjacent capacitors was obtained.
［実施例２］
実施例１と同様に、セラミックス粒界型半導体コンデン
サー磁器成形体の表面に、ペーストとして、Ｔｏｏ、Ｐ
ＶＡと純水からなるペースト濃度を実施例１の２１５と
したものを使い、印刷回数による粒径のコントロールを
行い、第２図に示すような結果を得た。[Example 2] Similarly to Example 1, Too and P were applied as a paste on the surface of a ceramic grain boundary type semiconductor capacitor ceramic molded body.
Using a paste consisting of VA and pure water with a concentration of 215 as in Example 1, the particle size was controlled by the number of times of printing, and the results shown in FIG. 2 were obtained.
なお印刷１回での印刷厚さはペースト乾燥後、約ｌＯ〜
５０−程度である。In addition, the printing thickness in one printing is approximately lO~ after the paste dries.
It is about 50-.
第２図に示す如く、印刷回数を増加するに従って粒径は
増大するが、印刷回数が３〜４回で１００ＩＪ１程度で
最大となる。As shown in FIG. 2, the particle size increases as the number of printings increases, but reaches a maximum at about 100 IJ1 after 3 to 4 printings.
尚、本実施例では、ＴｌＯ２ペーストをセラミックス粒
の成長促進物質として用いたが、ＭｇＯ。In this example, TlO2 paste was used as a growth promoting substance for ceramic grains, but MgO.
Ｚ ｒ Ｏ、Ｔ ｉＯ、Ｓ ｒ ＣＯ３から選ばれた１
種又は２種以上を用いてもよい。1 selected from Z r O, T iO, S r CO3
A species or two or more species may be used.
本発明の適用されるセラミックスとしては、前記実施例
のＳ ｒ Ｔ ｉＯ３に限定されず、酸化ジルコニウム
ＺｒＯ、酸化マグネシウムＭｇＯ等の酸化物系セラミッ
クスや、炭化ケイ素ＳｉＣ窒化ケイ素５１３Ｎ４やサイ
アロン等のようなケイ化物系セラミックスがある。Ceramics to which the present invention can be applied are not limited to S r TiO3 in the above embodiments, but also oxide ceramics such as zirconium oxide ZrO, magnesium oxide MgO, silicon carbide SiC silicon nitride 513N4, Sialon, etc. There are silicide ceramics.
［発明の効果］
本発明の磁器製造法によれば、粒成長促進物質をセラミ
ックス構造体の表面に塗布及び／又は印刷するという簡
単な手段を用いることにより、赤外線イメージ炉、レー
ザ光といった特別な加熱方法を利用しないため、また埋
め込みをするということに伴う複雑な工程が不要である
ため、安価かつ大量に粒成長を促進させた部位ををもつ
磁器作成することが実現出来るものである。[Effects of the Invention] According to the porcelain manufacturing method of the present invention, by using a simple method of coating and/or printing a grain growth promoting substance on the surface of a ceramic structure, a special method such as an infrared image furnace or a laser beam can be used. Since no heating method is used, and the complicated process associated with embedding is not required, it is possible to produce porcelain having regions with accelerated grain growth at low cost and in large quantities.
第１図は、本発明を適用した場合の磁器構造体の組織を
模式図、第２図は、ペースト印刷回数と粒径との関係グ
ラフ、第３図は、従来のセラミックス構造物の組織構造
説明図である。
図において、■＝粒成長した領域、■：母相、１１：表
面層、１２：内部。Fig. 1 is a schematic diagram of the structure of a ceramic structure to which the present invention is applied, Fig. 2 is a graph of the relationship between the number of times of paste printing and particle size, and Fig. 3 is the structure of a conventional ceramic structure. It is an explanatory diagram. In the figure, ■=region of grain growth, ■: matrix, 11: surface layer, 12: interior.
Claims (3)
ス粒の成長促進物質を該セラミックス表面に塗布及び／
又は印刷し、焼結することにより該セラミックス母相に
比べ粒径の大きい領域を生じさせることを特徴とする磁
器製造法。(1) Before firing, apply a ceramic grain growth promoting substance to the ceramic surface at appropriate parts of the porcelain molded body and/or
Or, a method for producing porcelain, which is characterized by printing and sintering to produce a region having a larger grain size than the ceramic matrix.
Ｏ，ＺｒＯ＿２，ＴｉＯ＿２．ＳｒＣＯ＿３から選ばれ
た１種又は２種以上を用いることを特徴とする請求項１
記載の磁器製造法。(2) Mg as a growth promoting substance for the ceramic grains
O, ZrO_2, TiO_2. Claim 1 characterized in that one or more selected from SrCO_3 is used.
The described porcelain manufacturing method.
Ｏ＿３、ＺｒＯ＿２、ＭｇＯ、ＳｉＣ、Ｓｉ＿３Ｎ＿４
、サイアロンから選ばれた１種又は２種以上を用いるこ
とを特徴とする請求項１項又は２項記載の磁器製造法。(3) As ceramics, Al_2O_3, SrTi
O_3, ZrO_2, MgO, SiC, Si_3N_4
3. The method for producing porcelain according to claim 1 or 2, characterized in that one or more selected from the group consisting of , and sialon are used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1117264A JPH02296763A (en) | 1989-05-12 | 1989-05-12 | Production of porcelain |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1117264A JPH02296763A (en) | 1989-05-12 | 1989-05-12 | Production of porcelain |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02296763A true JPH02296763A (en) | 1990-12-07 |
Family
ID=14707457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1117264A Pending JPH02296763A (en) | 1989-05-12 | 1989-05-12 | Production of porcelain |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02296763A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0354142A (en) * | 1989-07-21 | 1991-03-08 | Nkk Corp | Production of ceramics utilizing growth of abnormal grain |
-
1989
- 1989-05-12 JP JP1117264A patent/JPH02296763A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0354142A (en) * | 1989-07-21 | 1991-03-08 | Nkk Corp | Production of ceramics utilizing growth of abnormal grain |
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