JPH02293822A - Production of msi type nonlinear switching element - Google Patents
Production of msi type nonlinear switching elementInfo
- Publication number
- JPH02293822A JPH02293822A JP1115876A JP11587689A JPH02293822A JP H02293822 A JPH02293822 A JP H02293822A JP 1115876 A JP1115876 A JP 1115876A JP 11587689 A JP11587689 A JP 11587689A JP H02293822 A JPH02293822 A JP H02293822A
- Authority
- JP
- Japan
- Prior art keywords
- electrode layer
- switching element
- oxide film
- semi
- type nonlinear
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 230000001590 oxidative effect Effects 0.000 claims abstract description 6
- 238000000059 patterning Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 18
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 3
- 238000009751 slip forming Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 11
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004286 SiNxOy Inorganic materials 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
液晶表示素子は低消費電カのフラットパネルディスプレ
イとして広く応用されている。中でも、スイッチング素
子を各画素に作り込んで駆動するアクティブマトリクス
方式は大容量高品質の表示素子としてテレビ、情報端末
等に用いられつつある。スイッチング素子としては３端
子型のＴＰＴ（薄膜トランジスタ）と２端子型のダイオ
ードやＭＩＭ，ＭＳＩ（メタル●セミインシュレイター
）等の非線形抵抗素子が使われる。商品化は３端子型の
ＴＰＴが先行したが、２端子型は製造が３端子型に対し
て簡単であり、今後が期待されている。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] Liquid crystal display elements are widely applied as flat panel displays with low power consumption. Among these, the active matrix method, in which a switching element is built into each pixel and driven, is being used as a large-capacity, high-quality display element in televisions, information terminals, and the like. As switching elements, three-terminal type TPT (thin film transistor), two-terminal type diode, MIM, MSI (metal semi-insulator), and other nonlinear resistance elements are used. Commercialization of the three-terminal type TPT took precedence, but the two-terminal type is easier to manufacture than the three-terminal type, and is expected to continue in the future.
本発明はＭＳＩ（メタル●セミインシュレイター）型非
線形スイッチング素子に関する。The present invention relates to an MSI (metal semi-insulator) type nonlinear switching element.
第２図忙従来のＭＳＩ型非線形スイッチング素子を示す
。ガラス等の基板１上に透明電極ＩＴＯ（酸化インジウ
ム）等による第１の電極層２が成膜・パタン化される。Figure 2 shows a conventional MSI type nonlinear switching element. A first electrode layer 2 made of a transparent electrode such as ITO (indium oxide) is formed and patterned on a substrate 1 made of glass or the like.
続いて、非ストイキヨメトリーＳｉＮｘやＳｉＮｘＯｙ
等の半絶縁層６が成膜−パタン化される。最後にＣｒや
Ａｌ等の第２の電極層５が成膜・パタン化される。Next, non-stoichiometry SiNx and SiNxOy
A semi-insulating layer 6 such as the like is deposited and patterned. Finally, a second electrode layer 5 made of Cr, Al, etc. is formed and patterned.
従来例の課題は製造工程がやや複雑である点にある。第
２図の従来例では３枚のフォトマスクを必要としている
。また第１の電極層２と第２の電極層５があらわに露出
しているために図中の２１の経路を通じてのリーク電流
がスイッチング素子としてのＯＦＦ特性を不安定としや
すい。The problem with the conventional example is that the manufacturing process is somewhat complicated. The conventional example shown in FIG. 2 requires three photomasks. Further, since the first electrode layer 2 and the second electrode layer 5 are exposed, leakage current through the path 21 in the figure tends to make the OFF characteristics of the switching element unstable.
本発明の目的は従来例の製造法を簡略化し、且つ安定化
する方法を提供する。An object of the present invention is to provide a method that simplifies and stabilizes the conventional manufacturing method.
本発明はＭＳＩ型非線形スイッチング素子の製造方法に
於て基板上に第１の電極層と半絶縁層を連続的に成膜・
パタン化する工程と、第１の電極層を酸化して酸化膜を
形成する工程と、該第１の電極層と該酸化膜上に第２の
電極層を設ける工程とを有する事を特徴とし、２枚マス
ク工程で安定なＭＳＩ型非線形スイッチング素子を製造
可能とする。The present invention is a method for manufacturing an MSI type nonlinear switching element, in which a first electrode layer and a semi-insulating layer are continuously formed on a substrate.
The method is characterized by comprising a step of patterning, a step of oxidizing the first electrode layer to form an oxide film, and a step of providing a second electrode layer on the first electrode layer and the oxide film. , it is possible to manufacture stable MSI type nonlinear switching elements using a two-mask process.
第１図は本発明の実施例で，ＭＳＩ型非線形スイッチン
グ素子の製造方法を示す断面図である。FIG. 1 is a cross-sectional view showing a method of manufacturing an MSI type nonlinear switching element according to an embodiment of the present invention.
第１図囚は基板１上に第１の電極層２と半絶縁層６を連
続的に成膜φパタン化する工程である。FIG. 1 shows a step of successively forming a first electrode layer 2 and a semi-insulating layer 6 on a substrate 1 into a φ pattern.
第１の電極層２は実体酸化可能な金属であり、具体的に
は、Ｔａ，ｋｌ．Ｍｏ、ＭｏＳｉｘ等をスッパタ、蒸着
等で成膜される。半絶縁層６は非ストイキヨメトリーＳ
ｉＮｘ，Ｓ ｉＯｘＮｙ等、非線形抵抗特性を示す２
０〜１５Ｑｎｍの薄膜であり、プラズマＣＶＤ等で形成
される。The first electrode layer 2 is made of a metal that can be substantially oxidized, specifically, Ta, kl. A film of Mo, MoSix, etc. is formed by sputtering, vapor deposition, or the like. The semi-insulating layer 6 is non-stoichiometric S
2 exhibiting nonlinear resistance characteristics such as iNx, SiOxNy, etc.
It is a thin film of 0 to 15 Qnm and is formed by plasma CVD or the like.
第１図（Ｂ）は第１の電極層２を酸化して酸化膜４を形
成する工程である。FIG. 1(B) shows a step of oxidizing the first electrode layer 2 to form an oxide film 4. As shown in FIG.
第１の電極層２を酸化して酸化膜４を形成する方法の第
１の実施例としては、陽極酸化を用いる。As a first example of the method of oxidizing the first electrode layer 2 to form the oxide film 4, anodic oxidation is used.
例えば、第１の電極層としてＴａ．Ａ７？、ＭｏＳｉｘ
等を用いた場合、クエン酸溶液中で陽極酸化する事忙よ
り、厚さ約１００〜５ＱＱｎｍの陽極酸化膜を第１図（
Ｂ）のように第１の電極層２の側壁に形成する。For example, as the first electrode layer, Ta. A7? , MoSix
When using the above method, an anodic oxide film with a thickness of about 100 to 5QQnm is formed as shown in Fig. 1 (Fig. 1).
It is formed on the side wall of the first electrode layer 2 as shown in B).
第１の電極層２を酸化して酸化膜４を形成する方法の第
２の実施例としては、熱酸化を用いる。As a second example of the method of oxidizing the first electrode layer 2 to form the oxide film 4, thermal oxidation is used.
例えば、第１の電極層２としてＴａ，Ｍｏ等を用いた場
合、４００〜５００度の空気、酸素或は水蒸気雰囲気中
で実体熱酸化する事Ｋより、厚さ約１００〜５ＱＱｎｍ
の酸化膜４を（旬のように第１の電極層２の側壁に形成
する。For example, when Ta, Mo, etc. are used as the first electrode layer 2, the thickness is approximately 100 to 5QQnm due to substantial thermal oxidation in an air, oxygen, or water vapor atmosphere at 400 to 500 degrees Celsius.
An oxide film 4 is formed on the side wall of the first electrode layer 2 as shown in FIG.
第１図（Ｑは該第１の電極層２と該酸化膜４上に第２の
電極層５を成膜・パタン化する工程である。FIG. 1 (Q is a step of forming and patterning a second electrode layer 5 on the first electrode layer 2 and the oxide film 4.
透過型ディスプレーの場合、第２電極としては透明電極
が好ましく、透明電極ＩＴＯ（酸化インジウム）等を用
いると良い。反射型ではＡｅ，ｃｒ．Ａｕ等の金属の反
射電極で良い。In the case of a transmission type display, a transparent electrode is preferable as the second electrode, and a transparent electrode such as ITO (indium oxide) is preferably used. The reflective type is Ae, cr. A reflective electrode made of metal such as Au may be used.
本発明の第１の特徴は従来例が３枚のフォトマスクと３
回のバタン化工程を必要としたのに対し、２枚のフォト
マスクと２回のバタン化工程で問題がない点にある。本
発明は製造設備投資、製造歩留、製造コストの点でメリ
ット大きい。The first feature of the present invention is that the conventional example uses three photomasks and three photomasks.
In contrast to the previous method, which requires two batting steps, there is no problem with two photomasks and two batting steps. The present invention has great advantages in terms of manufacturing equipment investment, manufacturing yield, and manufacturing cost.
本発明の第２の特徴は第１の電極層２の表面が最終的に
露出せず、第２図２１の様なリーク経路が存在しない点
にある。第１の電極層２０表面はすべて酸化膜４に覆わ
れているため、水分等の影響が少なく、従来例にくらべ
極めて安定である。The second feature of the present invention is that the surface of the first electrode layer 2 is not exposed in the end, and there is no leak path as shown in FIG. 21. Since the entire surface of the first electrode layer 20 is covered with the oxide film 4, it is less affected by moisture and the like, and is extremely stable compared to the conventional example.
以上の実施例で明かな如く、本発明では２枚マスク工程
という極めて簡単な工程で、従来例と比べ非常に安定な
ＭＳＩ型非線形スイッチング素子を製造可能とする。As is clear from the above embodiments, the present invention makes it possible to manufacture an MSI type nonlinear switching element that is much more stable than the conventional example through an extremely simple process of a two-mask process.
第１図は本発明の実施例で、ＭＳＩ型非線形スイッチン
グ素子の製造方法を示す断面図、第２図は従来技術で，
ＭＳＩ型非線形スイッチング素子の製造方法を示す断面
図である。
１・・・・・・基板、２・・・・・・第１の電極層、３
・・・・・・半絶縁層、４・・・・・・酸化膜、５・・
・・・・第２の電極層。
特許出願人 シチズン時計株式会社鼻FIG. 1 shows an embodiment of the present invention, which is a cross-sectional view showing a method for manufacturing an MSI type nonlinear switching element, and FIG. 2 shows a conventional technique.
FIG. 3 is a cross-sectional view showing a method of manufacturing an MSI type nonlinear switching element. 1... Substrate, 2... First electrode layer, 3
... Semi-insulating layer, 4 ... Oxide film, 5 ...
...Second electrode layer. Patent applicant Citizen Watch Co., Ltd. Hana
Claims (4)
と、該両電極層間に設けられた半絶縁層からなるＭＳＩ
（メタル・セミインシェレイター）型非線形スイッチン
グ素子の製造方法に於て、基板上に第１の電極層と半絶
縁層を連続的に成膜・パタン化する工程と、第１の電極
層を酸化して酸化膜を形成する工程と、該第１の電極層
と該酸化膜上に第２の電極層を設ける工程とを有する事
を特徴とするＭＳＩ型非線形スイッチング素子の製造方
法。(1) MSI consisting of a first electrode layer and a second electrode layer provided on a substrate, and a semi-insulating layer provided between the two electrode layers.
(Metal Semi-Insulator) type nonlinear switching element manufacturing method includes a step of successively forming and patterning a first electrode layer and a semi-insulating layer on a substrate, and a step of sequentially forming and patterning a first electrode layer and a semi-insulating layer on a substrate. A method for manufacturing an MSI type nonlinear switching element, comprising the steps of oxidizing to form an oxide film, and providing a second electrode layer on the first electrode layer and the oxide film.
徴とする請求項１記載のＭＳＩ型非線形スイッチング素
子の製造方法。(2) The method for manufacturing an MSI type nonlinear switching element according to claim 1, wherein the oxidation method for the first electrode layer is anodic oxidation.
とする請求項１記載のＭＳＩ型非線形スイッチング素子
の製造方法。(3) The method for manufacturing an MSI type nonlinear switching element according to claim 1, wherein the oxidation method for the first electrode layer is thermal oxidation.
項１記載のＭＳＩ型非線形スイッチング素子の製造方法
。(4) The method for manufacturing an MSI type nonlinear switching element according to claim 1, wherein the first electrode layer is a Ta film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11587689A JP2795898B2 (en) | 1989-05-09 | 1989-05-09 | Method for manufacturing MSI type nonlinear switching element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11587689A JP2795898B2 (en) | 1989-05-09 | 1989-05-09 | Method for manufacturing MSI type nonlinear switching element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02293822A true JPH02293822A (en) | 1990-12-05 |
| JP2795898B2 JP2795898B2 (en) | 1998-09-10 |
Family
ID=14673353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11587689A Expired - Fee Related JP2795898B2 (en) | 1989-05-09 | 1989-05-09 | Method for manufacturing MSI type nonlinear switching element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2795898B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021090442A1 (en) * | 2019-11-07 | 2021-05-14 | 株式会社日立ハイテク | Fuel cell array and fuel cell inspection method |
-
1989
- 1989-05-09 JP JP11587689A patent/JP2795898B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021090442A1 (en) * | 2019-11-07 | 2021-05-14 | 株式会社日立ハイテク | Fuel cell array and fuel cell inspection method |
| JPWO2021090442A1 (en) * | 2019-11-07 | 2021-05-14 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2795898B2 (en) | 1998-09-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |