JPH02292175A - Polishing tool - Google Patents
Polishing toolInfo
- Publication number
- JPH02292175A JPH02292175A JP10724489A JP10724489A JPH02292175A JP H02292175 A JPH02292175 A JP H02292175A JP 10724489 A JP10724489 A JP 10724489A JP 10724489 A JP10724489 A JP 10724489A JP H02292175 A JPH02292175 A JP H02292175A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- polishing
- abrasive grains
- worked
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 18
- 239000006061 abrasive grain Substances 0.000 claims abstract description 11
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 11
- 229920005989 resin Polymers 0.000 claims abstract description 9
- 239000011347 resin Substances 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000007795 chemical reaction product Substances 0.000 abstract description 3
- 230000006866 deterioration Effects 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 5
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000010303 mechanochemical reaction Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 238000009725 powder blending Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Polishing Bodies And Polishing Tools (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は金属、セラミックス、電子材料などの精密表面
研磨を行うための工具に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a tool for precision surface polishing of metals, ceramics, electronic materials, etc.
従来の技術
研磨用固定砥粒工具としては、砥粒としてダイヤモンド
、アルミナ,酸化セリウムなどが,また砥粒固定用のボ
ンド(結合剤)として、鋳鉄や銅などの金属あるいはポ
リウレタンやアクリルなどの樹脂を用いたものが実用化
されている(例えば、馬場彦良:砥粒加工学会会報,銭
、[235] P.35、萩生田善明はか:精密工学会
誌、53、[101 p1582).
これらの工具は一般に砥粒よりも力学的に硬度の低い材
料を研磨するために用いられるもので、加工メカニズム
として砥粒先端における機械的押割りあるいは切削作用
によって被加工材表面を微小量ずつ除去するものである
.
このような加工法では,被加工物表面に必ずクラックや
スクラッチが残留するので、加工変質層のない鏡面を得
ることは困難である.
発明が解決しようとする課題
従来の固定砥粒工具は上記のように被加工材表面に加工
変質層を残留させるので、機能部品のような無歪表面を
必要とする被加工材についてはさらに仕上用の研磨工程
が必要である.
本発明は、砥粒として化学的活性の高いSi粉末を用い
、ボンドとして弾性の高い樹脂を用いることにより、S
iよりも硬度の高い被加工材料をスクラッチなどの加工
変質層のない鏡面に仕上げることのできる研磨工具を提
供することを目的とする.
課題を解決するための手段
本発明はS1粉末を各種樹脂ボンドで固定した研磨用工
具であることを特徴としている。以下本発明につき詳細
に説明する.
Siは化学的に極めて活性であり、多くの材料と反応生
成物を作る.また酸素雰囲気中では直ちに反応して表面
に酸化層を形成し、この酸化層が他の材料と反応するこ
とも知られている.このようなS1粉末を砥粒として用
いると、被加工材との接触点では局部的・瞬間的に高温
・高圧が発生し、被加工材とSiあるいは表面酸化層と
の反応が生ずる.この反応生成物を摺動摩擦力によって
除去すれば被加工材の研磨が進行する(このような機械
的作用によって反応が促進される現象をメカノケミカル
反応といい,この現象を利用する研磨法をメカノケミカ
ルポリシングという).このとき被加工材がSiあるい
はS1酸化物と化学反応を生じ得るもので、しかもSi
よりも硬度の大きいものであれば、S1粉末が被加工材
表面に押込まれたり、引掻いたりすることがないのでス
クラツチなどの加工損傷のない鏡面を創成することがで
きる.
Si粉末の粒径としては1〜10 g m程度、樹脂と
してはポリウレタン.アクリ口ニトリル、ポリエチレン
、フフ粗樹脂など、Si粉末と樹脂との配合率(体積比
)としては20〜80%が適当である。Conventional fixed abrasive tools for polishing use diamond, alumina, cerium oxide, etc. as the abrasive grains, and metals such as cast iron and copper or resins such as polyurethane and acrylic as the bond (binding agent) for fixing the abrasive grains. have been put into practical use. These tools are generally used to polish materials whose hardness is mechanically lower than that of abrasive grains, and the processing mechanism is to remove minute amounts of the surface of the workpiece by mechanical pushing or cutting action at the tip of the abrasive grains. It is something to do. With such processing methods, cracks and scratches always remain on the surface of the workpiece, so it is difficult to obtain a mirror surface without a damaged layer. Problems to be Solved by the Invention Conventional fixed abrasive tools leave a damaged layer on the surface of the workpiece as described above, so it is necessary to further polish workpieces that require a strain-free surface such as functional parts. A polishing process is required. The present invention uses Si powder with high chemical activity as the abrasive grains and a resin with high elasticity as the bond.
The purpose of the present invention is to provide a polishing tool that can finish a workpiece material with a hardness higher than that of I to a mirror surface without any damaged layer such as scratches. Means for Solving the Problems The present invention is characterized in that it is a polishing tool in which S1 powder is fixed with various resin bonds. The present invention will be explained in detail below. Si is extremely active chemically and forms reaction products with many materials. It is also known that in an oxygen atmosphere, it reacts immediately to form an oxide layer on the surface, and this oxide layer reacts with other materials. When such S1 powder is used as abrasive grains, high temperature and pressure are generated locally and instantaneously at the point of contact with the workpiece, causing a reaction between the workpiece and Si or the surface oxide layer. If this reaction product is removed by the sliding friction force, polishing of the workpiece progresses (this phenomenon in which the reaction is promoted by mechanical action is called mechanochemical reaction, and the polishing method that utilizes this phenomenon is called mechanochemical reaction). (called chemical polishing). At this time, the workpiece is one that can cause a chemical reaction with Si or S1 oxide, and
If the hardness is greater than that of the S1 powder, the S1 powder will not be pushed into or scratched on the surface of the workpiece, making it possible to create a mirror surface without processing damage such as scratches. The particle size of the Si powder is about 1 to 10 gm, and the resin is polyurethane. A suitable blending ratio (volume ratio) of Si powder and resin such as acrylonitrile, polyethylene, fufu crude resin, etc. is 20 to 80%.
被加工材としては例えばAl203 (単結品サファ
イヤ,アルミナ焼結体)などの酸化物やダイヤモンドな
どが考えられる.またボンドとして弾性の高い樹脂を用
いると接触点での作用圧力が均斉化されて全面均一に加
工されやすくなる.作用
上記の研磨工具を用いれば、高硬度材料を加工変質層を
生じずに高精度に研磨することができる.また工具形状
を平板状のみならず、小径のペレット状、球状あるいは
被加工材の被加工面形状に合わせた形状に成形して用い
れば、平面のみならず任意の自由形状表面を高精度に研
磨することも可能である.
実施例
平均粒径5pm(3〜71j−m90%以上)のSi粉
末を、ポリウレタン樹脂にSi粉末配合率50%で分散
固化させた平板状砥石を製作した.この砥石を用いてサ
ファイヤ(M203単結晶)とダイヤモンドを研磨した
結果を以下に示す。Possible materials to be processed include, for example, oxides such as Al203 (single sapphire, alumina sintered body), and diamond. Furthermore, if a highly elastic resin is used as the bond, the applied pressure at the contact point will be equalized, making it easier to process the entire surface uniformly. Function: Using the above-mentioned polishing tool, it is possible to polish highly hard materials with high precision without producing a damaged layer. In addition, if the tool shape is not only a flat plate but also a small diameter pellet, a sphere, or a shape that matches the surface shape of the workpiece, it is possible to polish not only flat surfaces but also arbitrary free-form surfaces with high precision. It is also possible to do so. Example A flat grindstone was manufactured by dispersing and solidifying Si powder with an average particle diameter of 5 pm (3 to 71 j-m or more, 90% or more) in a polyurethane resin at a Si powder blending ratio of 50%. The results of polishing sapphire (M203 single crystal) and diamond using this grindstone are shown below.
サフ7イヤ(0001)面を摺動速度約100m/si
n.押付け圧力1 kgf/c■2、大気中乾式の条件
で研磨したところ約4gm/hの加工能率で研磨できた
.ただしこのときのサファイヤ前加工面はB4C#40
00砥粒によるラッピング仕上面である.次にCvD法
でSi単結晶基板上に形成したダイヤモンド薄膜(厚さ
約IQgm)の表面を、Si粉末配合率80%の平板状
砥石を用いて研磨した.摺勤速度500m/sin、押
付圧力0.1 kgf/cm2.大気中乾式の条件で研
磨したところ0..8μm/hの加工能率で研磨できた
.
発明の効果
以上説明したとおり、本発明による研磨工具を用いれば
Siよりも高硬度の材料を表面平滑度高く、しかもスク
ラッチや加工変質層を生じないで研磨できるので高機能
部品用の最終研磨法として適する.
本研磨工具においてはS1粉末の被加工材料に対する押
込み、引掻き作用を生じないので、粒径を均一にそろえ
る必要がなく、例えば単結晶Siインゴットのスライシ
ング時に発生するような低級なSi粉末を原料として利
用できるので低コストで製造できる利点もある.Sliding speed on the Saf7ear (0001) surface is approximately 100m/si
n. When polished under dry conditions in the atmosphere with a pressing pressure of 1 kgf/c 2, polishing was achieved with a processing efficiency of approximately 4 gm/h. However, the sapphire pre-processed surface at this time is B4C#40
This is the surface finished by lapping with 00 abrasive grains. Next, the surface of the diamond thin film (thickness approximately IQgm) formed on the Si single crystal substrate by the CvD method was polished using a flat grindstone containing 80% Si powder. Slide speed 500 m/sin, pressing pressure 0.1 kgf/cm2. When polished under dry conditions in the atmosphere, the result was 0. .. Polishing was possible at a processing efficiency of 8 μm/h. Effects of the Invention As explained above, by using the polishing tool of the present invention, it is possible to polish materials with higher hardness than Si with high surface smoothness and without producing scratches or damaged layers, making it a suitable final polishing method for high-performance parts. It is suitable as In this polishing tool, the S1 powder does not push or scratch the workpiece material, so there is no need to make the grain size uniform, and for example, low-grade Si powder, such as that generated when slicing a single-crystal Si ingot, is used as the raw material. It also has the advantage of being able to be manufactured at low cost.
Claims (1)
おいて、砥粒としてSi粉末を用いることを特徴とする
研磨工具。A fixed abrasive tool for polishing in which abrasive grains are fixed with various resin bonds, characterized in that Si powder is used as the abrasive grains.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10724489A JPH02292175A (en) | 1989-04-28 | 1989-04-28 | Polishing tool |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10724489A JPH02292175A (en) | 1989-04-28 | 1989-04-28 | Polishing tool |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02292175A true JPH02292175A (en) | 1990-12-03 |
Family
ID=14454132
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10724489A Pending JPH02292175A (en) | 1989-04-28 | 1989-04-28 | Polishing tool |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02292175A (en) |
-
1989
- 1989-04-28 JP JP10724489A patent/JPH02292175A/en active Pending
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