JPH02291656A - Secondary electron multiplier and photo-electron multiplier with same secondary electron multiplier incorporated - Google Patents

Secondary electron multiplier and photo-electron multiplier with same secondary electron multiplier incorporated

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Publication number
JPH02291656A
JPH02291656A JP11144889A JP11144889A JPH02291656A JP H02291656 A JPH02291656 A JP H02291656A JP 11144889 A JP11144889 A JP 11144889A JP 11144889 A JP11144889 A JP 11144889A JP H02291656 A JPH02291656 A JP H02291656A
Authority
JP
Japan
Prior art keywords
stage
electron multiplier
secondary electron
dynode
dynodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11144889A
Other languages
Japanese (ja)
Other versions
JP2840853B2 (en
Inventor
Hiroyuki Kushima
浩之 久嶋
Masuyasu Ito
益保 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP11144889A priority Critical patent/JP2840853B2/en
Publication of JPH02291656A publication Critical patent/JPH02291656A/en
Application granted granted Critical
Publication of JP2840853B2 publication Critical patent/JP2840853B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To obtain a secondary electron multiplier and a photo-electron multiplier which are highly efficient by correcting the orbits of secondary electrons emitted from dynodes in the first stage, and thereby enhancing a carry-over factor over to dynodes in the second stage. CONSTITUTION:In groups 71 through 7n of dynodes, the dislocation S between the end sections 9a and 9b of an upper and a lower stage shall be set to be roughly 2/5d as usual in the second stage 72 through the (n)th stage 7n wherein d represents a dynode pitch. Only the dislocation S between the first stage 71 and the second stage 72 shall however, be set to be +1/5d<S<-1/5d by the method as described above in such a way as to be sufficiently smaller than 2/5d. This results in the characteristics of an electron carry-over factor as shown by a curve in the figure wherein the carry-over factor eta is roughly 80% representing the maximum when the dislocation S is equal to zero, eta will roughly be 60% representing the minimum when S is equal to 1/2d, similarly eta will roughly be 65% when S is equal to 2/5d, and eta will roughly be 72% when S is equal to 1/5d. This would allow an inequality of +1/5d<S<-1/5d to be maintained in order to obtain the excellent carry-over factor.

Description

【発明の詳細な説明】 「産業上の利用分野」 本発明はいわゆるベネシャンブラインド形ダイノードを
有する2次電子増倍管とこれを具備した光電子増倍管に
関するものである。
DETAILED DESCRIPTION OF THE INVENTION "Field of Industrial Application" The present invention relates to a secondary electron multiplier tube having a so-called Venetian blind dynode and a photomultiplier tube equipped with the same.

「従来の技術」 ベネシャンブラインド形ダイノードの2次電子増倍管を
用いた光電子増倍管は,第3図に示すように、ガラス管
(1)の光入射面(2)を平坦に形成し、その内側面に
ホトカソード(3)を設け、内周面には導電層(4)を
塗布する。ガラス管(1)の内部途中には集束電極(5
)を配置し,この集束電極(5)の後部には複数段に網
状電極(6■)・・・(6n)とダイノード(71)・
・・(7n)が設けられ、さらに最終段のダイノード(
7n)に臨ませてアノード(8)が設けられ、このアノ
ード(8)は外部への導出端子(図示せず)に結合され
ている. 前記ダイノード(71)・・・(7n)は、細中板状を
なし、その長辺が図に対し垂直方向に伸び、短辺が図示
部分であるような電極エレメント(9)からなり、?た
奇数段が増倍管主軸に対して同じ方向に45度傾斜し、
偶数段が奇数段とは逆方向に45度傾斜している。
"Prior art" A photomultiplier tube using a Venetian blind dynode secondary electron multiplier has a glass tube (1) with a flat light entrance surface (2) as shown in Figure 3. A photocathode (3) is provided on the inner surface thereof, and a conductive layer (4) is applied to the inner peripheral surface. A focusing electrode (5) is placed halfway inside the glass tube (1).
) are arranged, and at the rear of this focusing electrode (5), mesh electrodes (6■)...(6n) and dynodes (71) are arranged in multiple stages.
...(7n) is provided, and the final stage dynode (
An anode (8) is provided facing the terminal (7n), and this anode (8) is connected to a lead-out terminal (not shown) to the outside. The dynodes (71)...(7n) consist of an electrode element (9) having a narrow plate shape, the long side of which extends perpendicularly to the figure, and the short side of which is the part shown in the figure. The odd-numbered stages are tilted at 45 degrees in the same direction with respect to the main axis of the multiplier tube,
The even-numbered stages are inclined at 45 degrees in the opposite direction to the odd-numbered stages.

しかるに、このようなベネシャンブラインド形ダイノー
ド(71)・・・(7n)において,従来は、第4図に
示すように第1段目のダイノード(7■)から最終の第
n段目のダイノード(7n)まで、上下段間の電極エレ
メント(9)の位置関係は同一段の電極エレメント(9
)のピッチ間隔をd、上段の電極エレメント(9)の下
端(9a)と下段電極エレメント(9)の上端(9b)
との間隔をSとすると、すべてS=−dに設定されてい
た. 「発明が解決しようとする課題」 上述のように、第1段から第n段まで上下の位置関係が
すべてS=一dに設定すると、以下のような問題があっ
た。すなわち、通常、1段目より2段目がIOOV高く
、2段目より3段目が100v高いというように、ダイ
ノードの電圧は1段ずつ100■ずつ順次高くなってい
る.ここで,第4図に基き第3段目のダイノード(73
)の電子エレメント(9)?ら放出された2次電子(b
)を考えると、この2次電子(b)は第2段目のダイノ
ード(72)と第4段目のダイノード(74)の電界の
影響を受けて第4段目のダイノード(74)の電極エレ
メント(9)に入射する。ところが、第1段目のダイノ
ード(7■)についてだけは、第2段目のダイノード(
7.)の電界と遠く離れた位置にあるホトカソード(3
)の電界の影響を受けて第2段目のダイノード(7,)
へ入射しようとする。第1段目のダイノード(71)の
電極エレメント(9)の下半部(9■)から放出された
2次電子(c)は第2段目のダイノード(7■)の電極
エレメント(9)へ入射する軌道をとるが、上半部(9
1)から放出された2次電子(a)は第2段目(72)
を通り抜けて第3段目のダイノード(73)の電子エレ
メント(9)の上半部(9■)に入射する軌道をとるも
のが発生する。つまり、第1段目のダイノード(7■)
の電極エレメント(9)の上半部(91)から放出され
た2次電子軌道(a)だけが,第2段以下の他の段のダ
イノード(7.)・・・(7n)の電極エレメント(9
)の上半部(9■)から放出された第2次電子軌道(b
)と異?り、上方へ大きく飛び出すような軌道となり、
第2段目のダイノード(7■)の電極エレメント(9)
八入射する効率が悪くなる。
However, in such Venetian blind type dynodes (71)...(7n), conventionally, as shown in FIG. (7n), the positional relationship of the electrode elements (9) between the upper and lower stages is
), the pitch interval is d, and the lower end (9a) of the upper electrode element (9) and the upper end (9b) of the lower electrode element (9)
Let S be the interval between . "Problem to be Solved by the Invention" As described above, when the vertical positional relationship from the first stage to the nth stage is all set to S=1d, the following problems occur. That is, normally, the voltage of the dynode is increased by 100V at each stage, such as the second stage is IOOV higher than the first stage, the third stage is 100V higher than the second stage, and so on. Here, based on Fig. 4, the third stage dynode (73
) electronic element (9)? Secondary electrons (b
), this secondary electron (b) is influenced by the electric field of the second-stage dynode (72) and the fourth-stage dynode (74), and moves to the electrode of the fourth-stage dynode (74). incident on element (9). However, only the first stage dynode (7■) is different from the second stage dynode (7■).
7. ) is located far away from the electric field of the photocathode (3).
) under the influence of the electric field of the second stage dynode (7,)
trying to enter. The secondary electrons (c) emitted from the lower half (9■) of the electrode element (9) of the first stage dynode (71) are transferred to the electrode element (9) of the second stage dynode (7■). However, the upper half (9
The secondary electron (a) emitted from 1) is the second stage (72)
An object is generated that takes a trajectory that passes through the dynode (73) and enters the upper half (9) of the electronic element (9) of the third stage dynode (73). In other words, the first stage dynode (7■)
Only the secondary electron trajectory (a) emitted from the upper half (91) of the electrode element (9) is transmitted to the electrode elements of the dynodes (7.)...(7n) of the other stages below the second stage. (9
) is emitted from the upper half (9■) of the secondary electron orbit (b
) and different? It becomes a trajectory that jumps out greatly upwards,
Electrode element (9) of the second stage dynode (7■)
8, the efficiency of incidence will deteriorate.

本発明はベネシャンブラインド形ダイノードを有する2
次電子増倍管において、第1段目のダイノードにおける
2次電子軌道を正常にして効率よい増倍管を得ることを
目的とするものである。
The present invention has two dynodes with Venetian blind type dynodes.
The purpose of this invention is to normalize the trajectory of secondary electrons in the first stage dynode in a secondary electron multiplier to obtain an efficient multiplier.

「課題を解決するための手段』 本発明は、複数のダイノードをベネシャンブラインド形
に配置してなる2次電子増倍管において、第1段目のダ
イノードの下端と第2段目のダイノードの上端とのずれ
を、同一段のダイノードのビ以降のダイノードは各段毎
の前記ずれを前記ピッチの略−に配置してなるものであ
る. 「作用」 ベネシャンブラインド形ダイノードの2次電子増倍管で
は、各段間のずれはダイノードのピッチノードからすぐ
下段のダイノードに到達する2次?子の到達率が最大と
なる。ところが、第1段目から第2段目に到達する2次
電子については,かなり低い到達率となる.実験の結果
,第1段目と第2段目とについてだけはずれがほとんど
ない方が2次電子の到達率が高くなる。
"Means for Solving the Problems" The present invention provides a secondary electron multiplier in which a plurality of dynodes are arranged in a venetian blind configuration, in which the lower end of the first stage dynode and the second stage dynode are connected to each other. The deviation from the upper end of the dynodes in the same stage is arranged so that the above-mentioned deviation for each stage is approximately - of the above-mentioned pitch. In a doubler tube, the deviation between each stage is quadratic, reaching from the pitch node of the dynode to the dynode immediately below it? The child's arrival rate is maximized. However, the arrival rate of secondary electrons from the first stage to the second stage is quite low. As a result of experiments, the arrival rate of secondary electrons is higher when there is almost no deviation between the first stage and the second stage.

「実施例」 以下、本発明の一実施例を説明する。"Example" An embodiment of the present invention will be described below.

第1図において. (7.)(7■)(7,)(7.)
はそれぞれ第1段目、第2段目、第3段目、第4段目の
ダイノード群である。以下第n段目まであるが、図示を
省略した. この第1図に示す本発明のダイノード群(71)・・・
(7n)は、第2段目(72)から第n段目(7n)ま
で、従来同様、上下段の端部(9a) (9b)のずれ
Sは、ダイノードピッチをdとすると略一dに設定され
ている。第1段目(71)と第2段目(7■)のずれS
だけが−dよりも充分小さくなるように、具体的にはし
たのは、実験の結果、第2図に示すような特性が得られ
たことによる。すなわち、横軸にずれSをとり、縦軸に
第1段目(71)から第2段目(72)に到達した2次
電子の到達率ηをとると,ずれS=0のとき到達率η=
約80%と最大を示し、S=η=約72%を示した. 以上のことから、第2図の斜線で示した範囲、のとき良
好な到達率ηとなる。
In Figure 1. (7.) (7■) (7,) (7.)
are the dynode groups of the first stage, second stage, third stage, and fourth stage, respectively. There are stages up to the nth stage below, but illustration is omitted. Dynode group (71) of the present invention shown in FIG. 1...
(7n), from the second stage (72) to the nth stage (7n), as in the conventional case, the deviation S of the ends (9a) and (9b) of the upper and lower stages is approximately 1 d, where d is the dynode pitch. is set to . Disparity S between the first stage (71) and the second stage (7■)
The specific reason why only -d was made to be sufficiently smaller than -d was because the characteristics shown in FIG. 2 were obtained as a result of experiments. In other words, if the horizontal axis is the shift S, and the vertical axis is the arrival rate η of the secondary electrons that have reached the second stage (72) from the first stage (71), then when the shift S = 0, the arrival rate is η=
It showed a maximum of about 80%, and S=η=about 72%. From the above, a good arrival rate η is obtained in the shaded range in FIG.

以上のように構成された2次電子増倍管は第3図に示す
ような光電子増倍管の電子増倍部に取付けることによっ
て効率のよい光電子増倍管が得られる。
By attaching the secondary electron multiplier constructed as described above to the electron multiplier section of a photomultiplier tube as shown in FIG. 3, an efficient photomultiplier tube can be obtained.

「発明の効果」 本発明は上述のように構成したので、第1段目のダイノ
ードから放出される2次電子の軌道が修正され、第2段
目のダイノードに到達する率が高くなり、効率のよい2
次電子増倍管及び光電子増?管を得ることができる。
"Effects of the Invention" Since the present invention is configured as described above, the trajectory of the secondary electrons emitted from the first stage dynode is corrected, the rate of reaching the second stage dynode is increased, and the efficiency is increased. good 2
Secondary electron multiplier tube and photoelectron multiplier? You can get the tube.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明によるダイノード配置例の説明図、第2
図は電子到達率の特性図、第3図は一般的な光電子増倍
管の断面図、第4図は従来のダイノードの配置図である
。 (1)・・・ガラス管、(2)・・・光入射面、(3)
・・・ホトカソード、(4)・・・導電層、(5)・・
・集束電極、(6■)〜(6n)・・・網状電極. (
7.)〜(7n)・・・ダイノード、(8)・・・アノ
ード,(9)・・・電極エレメント、(9a) (9b
)・・・端部、(91)・・・上半部、(9■)・・・
下半部。 出願人  浜松ホトニクス株式会社
FIG. 1 is an explanatory diagram of an example of dynode arrangement according to the present invention, and FIG.
The figure is a characteristic diagram of electron arrival rate, FIG. 3 is a cross-sectional view of a general photomultiplier tube, and FIG. 4 is a layout diagram of a conventional dynode. (1)...Glass tube, (2)...Light incidence surface, (3)
... Photocathode, (4) ... Conductive layer, (5) ...
・Focusing electrode, (6■) to (6n)...Mesh electrode. (
7. ) ~ (7n)... Dynode, (8)... Anode, (9)... Electrode element, (9a) (9b
)...end, (91)...upper half, (9■)...
Lower half. Applicant Hamamatsu Photonics Co., Ltd.

Claims (3)

【特許請求の範囲】[Claims] (1)複数のダイノードをベネシャンブラインド形に配
置してなる2次電子増倍管において、第1段目のダイノ
ードの下端と第2段目のダイノードの上端とのずれを、
同一段のダイノードのピッチの2/5より小さくなるよ
うに配置し、第2段目以降のダイノードは各段毎の前記
ずれを前記ピッチの略2/5に配置してなることを特徴
とする2次電子増倍管。
(1) In a secondary electron multiplier tube in which a plurality of dynodes are arranged in a Venetian blind configuration, the deviation between the lower end of the first stage dynode and the upper end of the second stage dynode is calculated as follows:
The dynodes in the same stage are arranged so that the pitch is smaller than 2/5, and the dynodes in the second and subsequent stages are arranged so that the deviation for each stage is approximately 2/5 of the pitch. Secondary electron multiplier.
(2)ずれをS、ピッチをdとしたとき、ずれSは+2
/5d<S<−2/5d の範囲内に設定した請求項(1)記載の2次電子増倍管
(2) When the deviation is S and the pitch is d, the deviation S is +2
The secondary electron multiplier according to claim 1, wherein the secondary electron multiplier is set within the range of /5d<S<-2/5d.
(3)2次電子増倍部に、請求項(1)または(2)記
載の2次電子増倍管を具備してなることを特徴とする光
電子増倍管。
(3) A photomultiplier tube, characterized in that the secondary electron multiplier section is equipped with the secondary electron multiplier tube according to claim (1) or (2).
JP11144889A 1989-04-28 1989-04-28 Secondary electron multiplier and photomultiplier using this secondary electron multiplier Expired - Lifetime JP2840853B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11144889A JP2840853B2 (en) 1989-04-28 1989-04-28 Secondary electron multiplier and photomultiplier using this secondary electron multiplier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11144889A JP2840853B2 (en) 1989-04-28 1989-04-28 Secondary electron multiplier and photomultiplier using this secondary electron multiplier

Publications (2)

Publication Number Publication Date
JPH02291656A true JPH02291656A (en) 1990-12-03
JP2840853B2 JP2840853B2 (en) 1998-12-24

Family

ID=14561463

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11144889A Expired - Lifetime JP2840853B2 (en) 1989-04-28 1989-04-28 Secondary electron multiplier and photomultiplier using this secondary electron multiplier

Country Status (1)

Country Link
JP (1) JP2840853B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5616987A (en) * 1994-11-18 1997-04-01 Hamamatsu Photonics K.K. Electron multiplier
EP1638130A1 (en) * 2003-06-11 2006-03-22 Hamamatsu Photonics K.K. Multi anode-type photoelectron intensifier tube and radiation detector
US7285783B2 (en) 2003-06-11 2007-10-23 Hamamatsu Photonics K.K. Multi-anode type photomultiplier tube and radiation detector
US7489077B2 (en) 2004-03-24 2009-02-10 Hamamatsu Photonics K.K. Multi-anode type photomultiplier tube

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5616987A (en) * 1994-11-18 1997-04-01 Hamamatsu Photonics K.K. Electron multiplier
EP1638130A1 (en) * 2003-06-11 2006-03-22 Hamamatsu Photonics K.K. Multi anode-type photoelectron intensifier tube and radiation detector
US7285783B2 (en) 2003-06-11 2007-10-23 Hamamatsu Photonics K.K. Multi-anode type photomultiplier tube and radiation detector
EP1638130A4 (en) * 2003-06-11 2008-05-07 Hamamatsu Photonics Kk Multi anode-type photoelectron intensifier tube and radiation detector
US7786445B2 (en) 2003-06-11 2010-08-31 Hamamatsu Photonics K.K. Multi-anode type photomultiplier tube and radiation detector
US7489077B2 (en) 2004-03-24 2009-02-10 Hamamatsu Photonics K.K. Multi-anode type photomultiplier tube

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JP2840853B2 (en) 1998-12-24

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