JP2840853B2 - Secondary electron multiplier and photomultiplier using this secondary electron multiplier - Google Patents
Secondary electron multiplier and photomultiplier using this secondary electron multiplierInfo
- Publication number
- JP2840853B2 JP2840853B2 JP11144889A JP11144889A JP2840853B2 JP 2840853 B2 JP2840853 B2 JP 2840853B2 JP 11144889 A JP11144889 A JP 11144889A JP 11144889 A JP11144889 A JP 11144889A JP 2840853 B2 JP2840853 B2 JP 2840853B2
- Authority
- JP
- Japan
- Prior art keywords
- dynode
- stage
- secondary electron
- electron multiplier
- photomultiplier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
Description
【発明の詳細な説明】 「産業上の利用分野」 本発明はいわゆるベネシャンブラインド形ダイノード
を有する２次電子増倍管とこれを用いた光電子増倍管に
関するものである。Description: TECHNICAL FIELD The present invention relates to a secondary electron multiplier having a so-called venetian blind dynode and a photomultiplier using the same.
「従来の技術」 ベネシャンブラインド形ダイノードの２次電子増倍管
を用いた光電子増倍管は、第３図に示すように、ガラス
管（１）の光入射面（２）を平坦に形成し、その内側面
にホトカソード（３）を設け、内周面には導電層（４）
を塗布する。ガラス管（１）の内部途中には集束電極
（５）を配置し、この集束電極（５）の後部には複数段
に網状電極（61）…（6n）とダイノード（71）…（7n）
が交互に設けられ、さらに最終段のダイノード（7n）に
臨ませてアノード（８）が設けられ、このアノード
（８）は外部への導出端子（図示せず）に結合されてい
る。"Prior art" A photomultiplier tube using a secondary electron multiplier of a venetian blind dynode has a flat light incidence surface (2) of a glass tube (1) as shown in FIG. A photocathode (3) is provided on the inner surface, and a conductive layer (4) is provided on the inner peripheral surface.
Is applied. A focusing electrode (5) is arranged in the middle of the glass tube (1), and a mesh electrode (6 1 )... (6n) and a dynode (7 1 ). 7n)
Are alternately provided, and an anode (8) is provided facing the final stage dynode (7n), and this anode (8) is connected to an external lead-out terminal (not shown).
前記ダイノード（71）…（7n）は、細巾板状をなし、
その長辺が図に対し垂直方向に伸び、短辺が図示部分で
あるような電極エレメント（９）からなり、また奇数段
が増倍管主軸に対して同じ方向に45度傾斜し、偶数段が
奇数段とは逆方向に45度傾斜している。The dynodes (7 1 )... (7n) have a narrow plate shape,
The long side extends in the direction perpendicular to the figure, and the short side is composed of an electrode element (9) whose portion is the portion shown in the figure. Is inclined 45 degrees in the opposite direction to the odd-numbered steps.
しかるに、このようなベネシャンブラインド形ダイノ
ード（71）…（7n）において、従来は、第４図に示すよ
うに第１段目のダイノード（71）から最終の第ｎ段目の
ダイノード（7n）まで、上下段間の対応する電極エレメ
ント（９）の位置関係は同一段の電極エレメント（９）
のピッチ間隔をｄ、上段の電極エレメント（９）の下端
（9a）と下段電極エレメント（９）の上端（9b）とのず
れ間隔をＳとすると、すべて に設定されていた。However, in such a venetian blind type dynode (7 1 ) (7n), conventionally, as shown in FIG. 4, the first dynode (7 1 ) to the final n-th dynode (7 1 ) Until 7n), the positional relationship of the corresponding electrode element (9) between the upper and lower stages is the same as the electrode element (9) in the same stage.
Where d is the pitch interval and S is the shift interval between the lower end (9a) of the upper electrode element (9) and the upper end (9b) of the lower electrode element (9). Was set to
「発明が解決しようとする課題」 上述のように、第１段から第ｎ段まで上下の位置関係
がすべて に設定すると、以下のような問題があった。すなわち、
通常、１段目より２段目が100V高く、２段目より３段目
が100V高いというように、ダイノードの電圧は１段ずつ
100Vずつ順次高くなっている。ここで、第４図に基き第
３段目のダイノード（73）の電子エレメント（９）から
放出された２次電子（ｂ）を考えると、この２次電子
（ｂ）はすぐ上の段の第２段目のダイノード（72）とす
ぐ下の段の第４段目のダイノード（74）の電界の影響を
受けてすべて第４段目のダイノード（74）の電極エレメ
ント（９）に入射し、特に問題はない。ところが、第１
段目のダイノード（71）についてだけは、すぐ上の段に
ダイノードが存在しないため、遠く離れた位置にあるホ
トカソード（３）の電界とすぐ下の段の第２段目のダイ
ノード（72）の電界との影響を受けて第２段目のダイノ
ード（72）へ入射しようとする。そのため、第１段目の
ダイノード（71）の電極エレメント（９）の下半部
（92）から放出された２次電子（ｃ）は第２段目のダイ
ノード（72）の電極エレメント（９）へ入射する軌道を
とるが、上半部（91）から放出された２次電子（ａ）は
第２段目（72）を通り抜けて第３段目のダイノード
（73）の電子エレメント（９）の上半部（91）に入射す
る軌道をとるものが発生する。つまり、第１段目のダイ
ノード（71）の電極エレメント（９）の上半部（91）か
ら放出された２次電子軌道（ａ）だけが、第２段以下の
他の段のダイノード（72）…（7n）の電極エレメント
（９）の上半部（91）から放出された第２次電子軌道
（ｂ）と異なり、上方へ大きく飛び出すような軌道とな
り、第２段目のダイノード（72）の電極エレメント
（９）へ入射する効率が悪くなる。"Problems to be Solved by the Invention" As described above, all the vertical positional relationships from the first stage to the n-th stage are Setting to, there are the following problems. That is,
Usually, the voltage of the dynode is one step at a time, such that the second step is higher than the first step by 100V and the third step is higher by 100V than the second step.
It goes higher by 100V. Here, considering the secondary electrons (b) emitted from the electronic element (9) of the third dynode (7 3 ) based on FIG. 4, the secondary electrons (b) are in the immediately upper stage. the second dynode (7 2) and the electrode elements all under the influence of an electric field a fourth dynode (7 4) of the immediately fourth dynode stage below (7 4) (9 ) And there is no particular problem. However, the first
As for the dynode (7 1 ) at the stage only, since there is no dynode at the stage immediately above, the electric field of the photocathode (3) at a far position and the dynode (7 2 ) at the stage immediately below Under the influence of the electric field of ( 2 ), an attempt is made to impinge on the second dynode (72). Therefore, the electrode elements of the secondary electrons emitted from the lower half of the electrode elements of the first stage dynode (7 1) (9) (9 2) (c) a second dynode (7 2) (9) take the track enters the upper half (9 1) secondary electrons emitted from (a) the second stage (7 2) passes through the third dynode (7 3) It shall take track the incident occurs in the upper half of the electronic elements (9) (9 1). In other words, only the secondary electrons orbit emitted from the upper half of the electrode elements of the first stage dynode (7 1) (9) ( 9 1) (a) is, dynodes of other stages following the second stage (7 2) ... unlike the secondary electron trajectories emitted upper half of the electrode element (9) of the (7n) from (9 1) (b), becomes a trajectory, such as pop greater upward, the second stage Of the dynode (7 2 ) of the first electrode becomes inefficient.
本発明はベネシャンブラインド形ダイノードを有する
２次電子増倍管において、第１段目のダイノードにおけ
る２次電子軌道を正常にして効率よい増倍管を得ること
を目的とするものである。SUMMARY OF THE INVENTION An object of the present invention is to provide a secondary electron multiplier having a venetian blind dynode and to obtain an efficient multiplier by normalizing the secondary electron orbit in the first dynode.
「課題を解決するための手段」 本発明は、複数のダイノードをベネシャンブラインド
形に配置してなる２次電子増倍管において、第２段目以
降のダイノードにおけるその段のダイノードの下端と次
段のダイノードの上端とのずれを同一段のダイノードの
ピッチの略2/5に配置し、第１段目のダイノードの下端
と第２段目のダイノードの上端とのずれのみ前記第２段
目以降のダイノードのずれの大きさより小さくなるよう
に配置してなることを特徴とする２次電子増倍管であ
る。Means for Solving the Problems The present invention relates to a secondary electron multiplier in which a plurality of dynodes are arranged in a venetian blind form, and in a secondary electron multiplier, the lower end of the dynode of the second and subsequent dynodes and the next The deviation from the upper end of the dynode of the stage is arranged at approximately 2/5 of the pitch of the dynode of the same stage, and only the deviation between the lower end of the dynode of the first stage and the upper end of the dynode of the second stage is the second stage. A secondary electron multiplier characterized by being arranged so as to be smaller than the size of the displacement of the subsequent dynodes.
「作用」 ベネシャンブラインド形ダイノードの２次電子増倍管
では、一般に各段間のずれはダイノードのピッチの約2/
5に設定されている。この結果、上段のダイノードから
すぐ下段のダイノードに到着する２次電子の到達率が最
大となる。ところが、このままでは、第１段目から第２
段目に到達する２次電子については、かなり低い到達率
となる。本発明では、第１段目と第２段目とについてだ
けはずれの大きさを第２段目以降のずれよりも小さくな
るように配置したので、第１段目から第２段目への２次
電子の到達率が高くなる。実験の結果からも確認されて
いる。[Operation] In a secondary electron multiplier of a venetian blind dynode, the deviation between each stage is generally about 2 / the pitch of the dynode.
Set to 5. As a result, the arrival rate of secondary electrons arriving from the upper dynode to the lower dynode is maximized. However, in this state, the second stage from the first stage
For secondary electrons that reach the stage, the arrival rate is considerably low. In the present invention, only the first stage and the second stage are arranged so that the magnitude of the deviation is smaller than the deviation of the second and subsequent stages. The arrival rate of secondary electrons increases. It has been confirmed from the results of experiments.
「実施例」 以下、本発明の一実施例を説明する。Example An example of the present invention will be described below.
第１図において、（71）（72）（73）（74）はそれぞ
れ第１段目、第２段目、第３段目、第４段目のダイノー
ド群である。以下第ｎ段目まであるが、図示を省略し
た。In FIG. 1, (7 1 ), (7 2 ), (7 3 ), and (7 4 ) are dynode groups at the first, second, third, and fourth stages, respectively. Hereinafter, there is an n-th stage, but illustration is omitted.
この第１図に示す本発明のダイノード群（71）…（7
n）は、第２段目（72）から第ｎ段目（7n）まで、従来
同様、上下段の端部（9a）（9b）のずれＳは、ダイノー
ドピッチをｄとすると に設定されている。第１段目（71）と第２段目（72）の
ずれＳだけが よりも充分小さくなるように、具体的には となるように設定される。ここで、第１段目のダイノー
ド（71）の下端（9a）が第２段目のダイノード（72）に
重なる方向にずれているとき（第１図に例示した状態）
を＋とし、重ならない方向にずれているときを−とする
う。このような範囲に設定したのは、実験の結果、第２
図に示すような特性が得られたことによる。すなわち、
横軸にずれＳをとり、縦軸に第１段目（71）から第２段
目（72）に到達した２次電子の到達率ηをとると、 Ｓ＝０ のとき到達率η＝約80％と最大を示し、 のとき到達率η＝約60％と最小を示した。同様に ではη＝約65％、 ではη＝約72％を示した。The dynode group (7 1 ) of the present invention shown in FIG.
n) is the shift S of the upper and lower ends (9a) and (9b) from the second stage (7 2 ) to the n-th stage (7n), as in the conventional case, where the dynode pitch is d. Is set to Only the shift S between the first stage (7 1 ) and the second stage (7 2 ) To be much smaller than Is set to be Here, when the lower end (9a) of the first-stage dynode (7 1 ) is displaced in a direction overlapping with the second-stage dynode (7 2 ) (the state illustrated in FIG. 1).
Is defined as +, and when it is shifted in a non-overlapping direction is defined as-. The reason for setting this range is that the second
This is because the characteristics shown in the figure were obtained. That is,
Taking the shift S on the horizontal axis and the arrival rate η of the secondary electrons reaching the second stage (7 2 ) from the first stage (7 1 ) on the vertical axis, the arrival ratio η when S = 0 = About 80%, indicating the maximum, In this case, the arrival rate η was about 60%, which was the minimum. Likewise Then η = about 65%, Showed η = about 72%.
以上のことから、第２図の斜線で示した範囲、すなわ
ち のとき良好な到達率ηとなる。From the above, the range hatched in FIG. At this time, a favorable arrival rate η is obtained.
以上のように構成された２次電子増倍管は第３図に示
すような光電子増倍管の電子増倍部に取付けることによ
って効率のよい光電子増倍管が得られる。An efficient photomultiplier can be obtained by attaching the secondary electron multiplier configured as described above to the electron multiplier of the photomultiplier as shown in FIG.
「発明の効果」 本発明は上述のように構成したので、第１段目のダイ
ノードから放出される２次電子の軌道が修正され、第２
段目のダイノードに到達する率が高くなり、効率のよい
２次電子増倍管及び光電子増倍管を得ることができる。[Effect of the Invention] Since the present invention is configured as described above, the trajectory of secondary electrons emitted from the first dynode is corrected,
The rate of reaching the dynode of the stage becomes high, and an efficient secondary electron multiplier and photomultiplier can be obtained.
第１図は本発明によるダイノード配置例の説明図、第２
図は電子到達率の特性図、第３図は一般的な光電子増倍
管の断面図、第４図は従来のダイノードの配置図であ
る。 （１）……ガラス管、（２）……光入射面、（３）……
ホトカソード、（４）……導電層、（５）……集束電
極、（61）〜（6n）……網状電極、（71）〜（7n）……
ダイノード、（８）……アノード、（９）……電極エレ
メント、（9a）（9b）……端部、（91）……上半部、
（92）……下半部。FIG. 1 is an explanatory view of a dynode arrangement example according to the present invention, and FIG.
FIG. 3 is a characteristic diagram of the electron arrival rate, FIG. 3 is a cross-sectional view of a general photomultiplier, and FIG. 4 is a layout diagram of a conventional dynode. (1) ... glass tube, (2) ... light incident surface, (3) ...
Photocathode, (4) .... conductive layer, (5) ... focusing electrode, (6 1) ~ (6n) ...... mesh electrode, (7 1) ~ (7n) ....
Dynodes (8) ... anode, (9) ... electrode element, (9a) (9b) ...... end (9 1) .... on the half,
(9 2) ...... the lower half portion.
Claims (3)
形に配置してなる２次電子増倍管において、第２段目以
降のダイノードにおけるその段のダイノードの下端と次
段のダイノードの上端とのずれを同一段のダイノードの
ピッチの略2/5に配置し、第１段目のダイノードの下端
と第２段目のダイノードの上端とのずれのみ前記第２段
目以降のダイノードのずれの大きさより小さくなるよう
に配置してなることを特徴とする２次電子増倍管。In a secondary electron multiplier in which a plurality of dynodes are arranged in a Venetian blind form, the difference between the lower end of the dynode of the second stage and the upper end of the dynode of the next stage in the second and subsequent dynodes. Are arranged at approximately 2/5 of the pitch of the dynodes in the same stage, and only the deviation between the lower end of the dynode of the first stage and the upper end of the dynode of the second stage is larger than the deviation of the dynodes in the second and subsequent stages. A secondary electron multiplier, which is arranged so as to be small.
ードの下端が第２段目のダイノードに重なる方向のずれ
を＋、重ならない方向のずれを−としたとき、第１段目
と第２段目の前記ずれＳは、 の範囲内に設定した請求項（１）記載の２次電子増倍
管。2. A method according to claim 1, wherein the shift is S, the pitch is d, the shift in the direction in which the lower end of the first dynode overlaps the second dynode is +, and the shift in the non-overlapping direction is-. The shift S between the eye and the second stage is The secondary electron multiplier according to claim 1, wherein the secondary electron multiplier is set in the range of:
（２）記載の２次電子増倍管を具備してなることを特徴
とする光電子増倍管。3. A photomultiplier comprising a secondary electron multiplier according to claim 1 or 2 provided in a secondary electron multiplier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11144889A JP2840853B2 (en) | 1989-04-28 | 1989-04-28 | Secondary electron multiplier and photomultiplier using this secondary electron multiplier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11144889A JP2840853B2 (en) | 1989-04-28 | 1989-04-28 | Secondary electron multiplier and photomultiplier using this secondary electron multiplier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02291656A JPH02291656A (en) | 1990-12-03 |
| JP2840853B2 true JP2840853B2 (en) | 1998-12-24 |
Family
ID=14561463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11144889A Expired - Lifetime JP2840853B2 (en) | 1989-04-28 | 1989-04-28 | Secondary electron multiplier and photomultiplier using this secondary electron multiplier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2840853B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3392240B2 (en) * | 1994-11-18 | 2003-03-31 | 浜松ホトニクス株式会社 | Electron multiplier |
| JPWO2004112083A1 (en) * | 2003-06-11 | 2006-07-20 | 浜松ホトニクス株式会社 | Multi-anode type photomultiplier tube and radiation detector |
| US7285783B2 (en) | 2003-06-11 | 2007-10-23 | Hamamatsu Photonics K.K. | Multi-anode type photomultiplier tube and radiation detector |
| US7489077B2 (en) | 2004-03-24 | 2009-02-10 | Hamamatsu Photonics K.K. | Multi-anode type photomultiplier tube |
-
1989
- 1989-04-28 JP JP11144889A patent/JP2840853B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02291656A (en) | 1990-12-03 |
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