JPH02291000A - Production of electronic part - Google Patents
Production of electronic partInfo
- Publication number
- JPH02291000A JPH02291000A JP11136989A JP11136989A JPH02291000A JP H02291000 A JPH02291000 A JP H02291000A JP 11136989 A JP11136989 A JP 11136989A JP 11136989 A JP11136989 A JP 11136989A JP H02291000 A JPH02291000 A JP H02291000A
- Authority
- JP
- Japan
- Prior art keywords
- barrel
- dummy
- chip
- plating
- electronic component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000007747 plating Methods 0.000 claims abstract description 38
- 238000009713 electroplating Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000003985 ceramic capacitor Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、積層セラミックコンデンサやチップ抵抗等の
電子部品の製造方法に関し、詳しくは、電子部品に均一
な厚さのメッキ層を形成し、メッキ成長効率を向上させ
たメッキ方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method of manufacturing electronic components such as multilayer ceramic capacitors and chip resistors, and more specifically, a method of manufacturing electronic components such as a multilayer ceramic capacitor and a chip resistor. This invention relates to a plating method with improved plating growth efficiency.
積層セラミックコンデンサ、チップ抵抗、積層バリスタ
等の電子部品は、第2図の一部断面正面図に示すような
液処理装置によって、多数個一括してメブキ処理してい
る.
同図において、(1)は、一列に多数個並べられた処理
槽で、内部にメッキ液(2)等を収容する。(3)は、
前記処理槽(1)の上方において水平移動及び鉛直移動
するキャリアで、上下動するアーム(4)の下端部に、
チップ状の電子部品(5)を多数個収納して、回転する
六角筒形のバレル(6)を具備する。バレル(6)の周
面及び側面にはスリソ} (6a)を形成し、バレル(
6)がメッキ液(2)内に浸漬されたときに、メッキ液
(2)がバレル(6)内に浸入できるようにしておく。Electronic components such as multilayer ceramic capacitors, chip resistors, multilayer varistors, etc. are treated in batches using liquid processing equipment as shown in the partially cross-sectional front view of Figure 2. In the figure, (1) is a processing tank in which a large number of processing tanks are arranged in a row, and a plating solution (2) and the like are stored therein. (3) is
A carrier that moves horizontally and vertically above the processing tank (1), and at the lower end of the arm (4) that moves up and down,
It is equipped with a rotating hexagonal cylindrical barrel (6) that accommodates a large number of chip-shaped electronic components (5). A slit (6a) is formed on the circumferential surface and side surface of the barrel (6).
6) is immersed in the plating solution (2), the plating solution (2) is allowed to infiltrate into the barrel (6).
(7)は、前記バレル(6)の内部を貫通し、回転支軸
を兼ねる陰極の電極バーで、バレル(6)から離れたと
ころに配置された陽極バー〔図示せず〕とによって、メ
ッキ液(2)にメソキ電流を流す。(7) is a cathode electrode bar that penetrates the inside of the barrel (6) and also serves as a rotational support shaft, and an anode bar (not shown) located at a distance from the barrel (6) enables plating. A mesoelectric current is applied to the solution (2).
尚、電子部品(5)のメッキ形成部分である電極は電子
部品(5)の両端にAgペースト等が形成されているだ
けで、両端以外は絶縁部であるため、電極にはメッキ電
流が流れにくいことから、バレル(6)内には、電子部
品(5)とともに、鉄製の球形ダミーチップ(10)を
混合し、電子部品(5)のメッキ形成部分である電極を
球形ダミーチップ(10)を介して、電極バー(7)に
通電された状態にして、メッキ電流が十分に流れるよう
にされている。Note that the electrodes, which are the plating parts of the electronic component (5), are simply coated with Ag paste, etc. at both ends of the electronic component (5), and the rest of the part is insulated, so no plating current flows through the electrodes. Since it is hard to use, a spherical iron dummy chip (10) is mixed together with the electronic component (5) in the barrel (6), and the electrode, which is the plated part of the electronic component (5), is placed in the spherical dummy chip (10). The electrode bar (7) is energized through the electrode bar (7) so that a sufficient plating current flows through the electrode bar (7).
液処理装置は以上のように構成され、次に、電子部品(
5)にメッキ処理する方法について説明する。The liquid processing device is configured as described above, and then the electronic components (
5) The plating method will be explained.
先ず、電子部品(5)と球形ダミーチップ(lO)とを
収納したバレル(6)を、処理槽(1)内のメッキ液(
2)に?+?Mする。そして、電穫バー(7)によって
メ・ノキ電流を流しながら、バレル(6)を回転させる
。すると、電子部品(5)が球形ダミーチップ(10)
とともに、バレル(6)内で転勤し、電子部品(5)の
電橿が、球形ダミーチップ(10)を介して、電極バー
(7)に通電し、メッキが形成される.メッキ処理は、
複数の処理槽(1)で複数回行われた後、洗浄水を収納
した処理槽で水洗いされて終了する。First, a barrel (6) containing an electronic component (5) and a spherical dummy chip (lO) is placed in a plating solution (1) in a processing tank (1).
2) To? +? M. Then, the barrel (6) is rotated while applying electric current using the electric bar (7). Then, the electronic component (5) becomes a spherical dummy chip (10)
At the same time, the electric rod of the electronic component (5) is transferred within the barrel (6), and electricity is applied to the electrode bar (7) via the spherical dummy chip (10), thereby forming plating. The plating process is
After being carried out multiple times in a plurality of processing tanks (1), the process is finished by being washed with water in a processing tank containing washing water.
(発明が解決しようとする課題〕
電子部品(5)の外形がlmX2m乃至2龍×3flの
比較的小さなものにあっては、直径1.2〜1.7fl
の球形ダミーチップ(10)を電子部品(5)の2倍乃
至4倍の数量混合している。電子部品(5)の大きさよ
りもやや小さめの球形ダミーチップ(10)を混合する
ことにより、電子部品(5)の電極が球形ダミーチップ
(10)を介して、電極バー(7)に接触し、通電され
た状態となり、均一なメッキ厚を形成することができる
。(Problem to be Solved by the Invention) If the electronic component (5) has a relatively small external shape of 1 m x 2 m to 2 x 3 fl, the diameter is 1.2 to 1.7 fl.
Two to four times as many spherical dummy chips (10) as the electronic components (5) are mixed. By mixing a spherical dummy chip (10) that is slightly smaller in size than the electronic component (5), the electrode of the electronic component (5) comes into contact with the electrode bar (7) via the spherical dummy chip (10). , it becomes energized and a uniform plating thickness can be formed.
しかし、電子部品(5)の外形が3mmX4mのように
比較的大きくなると、直径1.2〜1.7鶴の小さな球
形ダミーチノプ(10)では、バレル(6)の回転軸の
上方において電子部品(5)間の隙間から球形ダミーチ
ソプ(10)が落ち込み、バレル(6)底部に集中して
、球形ダミーチフプ(10)が不足状態となり、電子部
品(5)の電掘が電極バー(7)に接触した状態になら
ない場合がある。すると、゛通電性が不均一になり、一
つのバレル(6)に収納された電子部品(5)間及び別
のバレル(6)に収納された電子部品(5)間で均一な
厚さのメッキ層を形成することができなくなる。However, when the external size of the electronic component (5) is relatively large, such as 3 mm x 4 m, the electronic component ( 5) The spherical dummy tip (10) falls from the gap between the holes and concentrates on the bottom of the barrel (6), causing a shortage of the spherical dummy tip (10), and the electric groove of the electronic component (5) contacts the electrode bar (7). In some cases, the condition may not be reached. As a result, the electrical conductivity becomes non-uniform, resulting in a uniform thickness between the electronic components (5) housed in one barrel (6) and between the electronic components (5) housed in another barrel (6). It becomes impossible to form a plating layer.
他方、電子部品(5)間の隙間内に入り込まないような
直径2.4〜3.O tmの大きな球形ダミーチンプ(
10)を使用すると、逆にバレル(6)の回転軸の上方
において、電子部品(5)が球形ダミーチップ(10)
より下方に集中する。メッキ電流はバレル(6)の回転
軸の上方部、すなわちメッキ液接触部に流れやすいため
球形ダミーチップ(10)の方に多くメッキされ、電子
部品(5)のメッキ成長効率が低下し、メッキ時間が長
くなるという不具合を生ずる。On the other hand, the diameter is 2.4 to 3.5 mm so that it does not get into the gap between the electronic components (5). Otm's large spherical dummy chimp (
10), on the other hand, the electronic component (5) is placed above the rotation axis of the barrel (6), and the spherical dummy chip (10)
Concentrate more downward. Since the plating current tends to flow to the upper part of the rotating shaft of the barrel (6), that is, to the part in contact with the plating liquid, more plating is applied to the spherical dummy chip (10), which reduces the plating growth efficiency of the electronic component (5) and causes plating. This results in a problem that it takes a long time.
そこで、本発明は、通電性がよく、しかも、メッキ成長
効率が高い電子部品の製造方法を提供することを目的と
する。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a method for manufacturing an electronic component that has good electrical conductivity and high plating growth efficiency.
本発明は上記目的を達成するため、多数のチップ状電子
部品とダミーチソプとを所定の割合で混合してバレルメ
ッキする際、複数種類の大きさを有し、その各種類は上
記電子部品よりも小さく、かつ、その内の一種類は電子
部品に近い大きさをもつダミーチソプと、上記電子部品
とを所定の割合で混合してバレルメソキするものである
。In order to achieve the above object, the present invention has a plurality of sizes when mixing a large number of chip-shaped electronic components and dummy chisop in a predetermined ratio and barrel plating, each type having a size larger than the above-mentioned electronic component. A small dummy chisel, one of which has a size close to that of an electronic component, and the electronic component are mixed at a predetermined ratio and then barrel-mixed.
電子部品よりも小さな複数種類のダミーチフブによって
、電子部品がバレル内の位置に関係なく電気的に十分接
続され、メッキ液に浸漬される電子部品に、通電性よく
メッキ電流が流れ、また、ダミーチソプにあまりメッキ
されることがな《なるのでメッキの成長効率が高くなる
。By using multiple types of dummy chips smaller than the electronic components, the electronic components are electrically connected regardless of their position in the barrel, and the plating current flows with good conductivity to the electronic components immersed in the plating solution. Since less plating occurs, the growth efficiency of plating becomes higher.
本発明に係る一実施例を、第1図の液処理装置の一部断
面側面図を参照しながら説明する。An embodiment of the present invention will be described with reference to a partially sectional side view of a liquid processing apparatus shown in FIG.
但し、従来と同一部品は、同一符号を付して、その説明
は省略する.
同図において、(11)、(12)は、チップ状電子部
品(5)よりも小さな第1、第2のダミーチップで、例
えば、電子部品(5)が3龍×4Hの大きさであるとき
は、第1のダミーチップ(1l)は直径が1.2鰭乃至
1.7 nのものを用い、第2のダミーチップ(12)
は、直径が2.4龍乃至3.O tmの電子部品(5)
に近い大きさのものを用いる。そして、キャリア(6)
内に、電子部品(5)を125 ccの容量分収納する
ときは、第1と第2のダミーチップ(11) (12
)は、共に、例えば240 ccずつの容量分収納し、
電子部品(5)と第1、第2のダミーチップ(11)(
12)との容量を約1:2:2の割合とする。However, parts that are the same as before are given the same reference numerals and their explanations will be omitted. In the figure, (11) and (12) are first and second dummy chips smaller than the chip-shaped electronic component (5), for example, the electronic component (5) has a size of 3 dragons x 4 H. In this case, the first dummy tip (1l) has a diameter of 1.2 to 1.7 nm, and the second dummy tip (12)
The diameter is 2.4 to 3. Otm electronic components (5)
Use one with a size close to . And career (6)
When storing electronic components (5) with a capacity of 125 cc inside, the first and second dummy chips (11) (12
) both store a capacity of, for example, 240 cc,
Electronic component (5) and first and second dummy chips (11) (
12) in a ratio of approximately 1:2:2.
このような第1と第2のダミーチフブ(11)(12)
及び電子部品(5)を収納したキャリア(6)を処理槽
(1)内のメッキ液(2)に浸漬する.そして、電極バ
ー(7)によってメッキ電流を流しながら、バレル(6
)を回転すると、第1と第2のダミーチップ(11)
(12)及び電子部品(5)は、バレル(6)内で転
勤する。電子部品(5)は、バレル(6)の底部におい
て、密に偏在し、回転方向上方において粗になるが、小
さめの第1のダミーチップ(11)がバレル(6)の底
部に集まり、大きめ第2のダミーチンプ(12)が回転
方向上方に集まる.従って、都合よく、第1のダミーチ
ップ(11)が密な電子部品(5)の電極に当接し、第
2のダミーチップ(12)が粗な電子部品(5)に当接
して均一に混ざる。この結果、電極バー(7)から第1
及び第2のダミーチップ(11) (12)を介して
、電子部品(5)に確実に通電され、均一な厚みのメッ
キを形成することができる。Such first and second dummy chips (11) (12)
and the carrier (6) containing the electronic components (5) are immersed in the plating solution (2) in the treatment tank (1). Then, while applying plating current through the electrode bar (7), the barrel (6
), the first and second dummy chips (11)
(12) and electronic components (5) are transferred within the barrel (6). The electronic components (5) are densely distributed at the bottom of the barrel (6) and become coarser in the upper direction of rotation, but the smaller first dummy chips (11) gather at the bottom of the barrel (6) and the larger The second dummy chimp (12) gathers upward in the direction of rotation. Therefore, conveniently, the first dummy chip (11) contacts the electrodes of the dense electronic component (5), and the second dummy chip (12) contacts the coarse electronic component (5) to mix uniformly. . As a result, the first
The electronic component (5) is reliably energized through the second dummy chips (11) and (12), and plating with a uniform thickness can be formed.
また、実験の結果、3 m X 4 yの電子部品(5
)に、直径が2.4鴎の第2のダミーチップ(12)を
一種類だけ混在させたときよりも、1.5鰭の第1のダ
ミーチップ(11)と2.7龍の第2のダミーチップ(
12)の二種類を混在させた方が、第1、第2のダミー
チップ(11) (12)よりも電子部品(5)の方
に多くメッキされることがわかった。In addition, as a result of the experiment, we found that 3 m x 4 y electronic components (5
) and a second dummy tip (12) with a diameter of 2.4 fins, the first dummy tip (11) with a diameter of 1.5 fins and the second dummy tip with a diameter of 2.7 fins dummy chip (
It was found that when the two types 12) were mixed, the electronic component (5) was plated more than the first and second dummy chips (11) and (12).
以上は本発明に係る一実施例を説明したもので、本発明
はこの実施例に限定することなく本発明の要旨内におい
て設計変更することができ、電子部品の大きさに対応し
て、ダミーチップの大きさと種類あるいはその混合比率
は適宜変更できる。The above describes one embodiment according to the present invention, and the present invention is not limited to this embodiment, and the design can be changed within the gist of the present invention. The size and type of chips or their mixing ratio can be changed as appropriate.
本発明によれふば、バレル内に複数種類のダミーチップ
を混在させることにより、電子部品への通電性が向上し
、均一な厚みのメッキを形成することができる。また、
ダミーチップにあまりメッキされないことから、メッキ
成長効率が向上し、メッキ時間が短縮されて、作業性が
よくなる。According to the present invention, by mixing a plurality of types of dummy chips in the barrel, it is possible to improve the conductivity of electricity to the electronic component and form plating with a uniform thickness. Also,
Since less plating is applied to the dummy chip, the plating growth efficiency is improved, the plating time is shortened, and workability is improved.
第1図は本発明を実施する液処理装置の一部断面側面図
、第2図は従来の液処理装置の一部断面正面図である。
( 1 ) 一処理槽、 (2)一・メッキ液、
( 5 ) 一電子部品、 < 6 > 一バレル
、(11)・一第1のダミーチップ、
(12)・一第2のダミーチソブ。FIG. 1 is a partially sectional side view of a liquid processing apparatus embodying the present invention, and FIG. 2 is a partially sectional front view of a conventional liquid processing apparatus. (1) One treatment tank, (2) One plating solution,
(5) One electronic component, <6> One barrel, (11) one first dummy chip, (12) one second dummy chip.
Claims (1)
の割合で混合してバレルメッキする際、複数種類の大き
さを有し、その各種類は上記電子部品よりも小さく、か
つ、その内の一種類は電子部品に近い大きさをもつダミ
ーチップと、上記電子部品とを所定の割合で混合してバ
レルメッキすることを特徴とする電子部品の製造方法。(1) When barrel plating a large number of chip-shaped electronic components and dummy chips mixed at a predetermined ratio, they have multiple sizes, each of which is smaller than the electronic components mentioned above, and One type of electronic component manufacturing method is characterized in that a dummy chip having a size close to that of an electronic component and the electronic component are mixed at a predetermined ratio and barrel plated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11136989A JPH02291000A (en) | 1989-04-28 | 1989-04-28 | Production of electronic part |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11136989A JPH02291000A (en) | 1989-04-28 | 1989-04-28 | Production of electronic part |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02291000A true JPH02291000A (en) | 1990-11-30 |
Family
ID=14559449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11136989A Pending JPH02291000A (en) | 1989-04-28 | 1989-04-28 | Production of electronic part |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02291000A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000226689A (en) * | 1999-02-08 | 2000-08-15 | Murata Mfg Co Ltd | Method for forming bump electrode of electronic parts, and electronic parts |
JP2021138999A (en) * | 2020-03-04 | 2021-09-16 | 株式会社村田製作所 | Plating method |
-
1989
- 1989-04-28 JP JP11136989A patent/JPH02291000A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000226689A (en) * | 1999-02-08 | 2000-08-15 | Murata Mfg Co Ltd | Method for forming bump electrode of electronic parts, and electronic parts |
JP2021138999A (en) * | 2020-03-04 | 2021-09-16 | 株式会社村田製作所 | Plating method |
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