JPH02280114A - Formation of groove-shaped electrode to plzt light transmittable ceramics - Google Patents
Formation of groove-shaped electrode to plzt light transmittable ceramicsInfo
- Publication number
- JPH02280114A JPH02280114A JP9996489A JP9996489A JPH02280114A JP H02280114 A JPH02280114 A JP H02280114A JP 9996489 A JP9996489 A JP 9996489A JP 9996489 A JP9996489 A JP 9996489A JP H02280114 A JPH02280114 A JP H02280114A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- electrodes
- shaped
- plzt
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims description 7
- 230000015572 biosynthetic process Effects 0.000 title abstract 2
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000007772 electroless plating Methods 0.000 claims abstract description 8
- 238000003486 chemical etching Methods 0.000 claims abstract description 7
- 238000000206 photolithography Methods 0.000 claims abstract description 5
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical class [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 abstract description 16
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 12
- 230000005684 electric field Effects 0.000 abstract description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 4
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 4
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000012153 distilled water Substances 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 238000004031 devitrification Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101100514056 Rhodobacter capsulatus modD gene Proteins 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明はランタン変性ジルコン酸チタン酸鉛(以下PL
ZTと記す)透光性セラミックスに、簡便かつ量産化に
適した方法で溝型電極を形成する技術に関するものであ
る。[Detailed Description of the Invention] [Industrial Application Field] The present invention provides lanthanum-modified lead zirconate titanate (hereinafter referred to as PL
The present invention relates to a technique for forming groove-shaped electrodes on translucent ceramics (referred to as ZT) by a method that is simple and suitable for mass production.
[従来の技術]
PLZT透光性セラミックスは大きな電気光学効果を有
することから、オプトエレクトロニクスの分野における
光シヤツター、光バルブ、光スィッチ、光変調器などの
材料素子としてその応用が期待されている材料である。[Prior Art] PLZT translucent ceramics has a large electro-optic effect, and is therefore a material that is expected to be applied as material elements for optical shutters, light valves, optical switches, optical modulators, etc. in the field of optoelectronics. It is.
これらの素子の特徴は、電気信号を偏光面の変化として
伝えて光の透過率の制御を行なっていることから、機械
的なシャッター・スイッチなどと異なり、動く部分がな
くコンパクトにできることと、制御速度が非常に高速と
なるこ・とである。しかし、制御する電気信号である電
圧が非常に大きいため電気信号の発信回路での応答速度
が高速で制御できず、高速制御特性も充分に活かせない
という問題点がある。そのため、印加電圧の低減が必要
となる。The characteristics of these elements are that they control light transmittance by transmitting electrical signals as changes in the plane of polarization, so unlike mechanical shutter switches, etc., they have no moving parts and can be made compact, and they are easy to control. The speed is extremely high. However, since the voltage that is the electrical signal to be controlled is very large, the response speed of the electrical signal transmission circuit cannot be controlled at high speed, and there is a problem that the high-speed control characteristics cannot be fully utilized. Therefore, it is necessary to reduce the applied voltage.
駆動電圧を低減するため第2図の様な櫛形電極が既知の
技術である。こわは、電極間距離を狭めて印加電圧を下
げても同一電場がかかるように考案されたものである。In order to reduce the driving voltage, a comb-shaped electrode as shown in FIG. 2 is a known technique. The stiffness was designed so that the same electric field is applied even if the distance between the electrodes is narrowed and the applied voltage is lowered.
しかし、この櫛形パターンの断面図をみると、第3図の
様に偏光面を変化させ得る充分な電場がかかる厚み方向
の範囲(第3図でdの範囲のこと、以下dと記す)は表
面近傍の部分でしかない。そこで、第4図(a)の様に
溝型の櫛形パターン電極構造にすると、dが内部まで拡
大し同一電場でも偏光面の変化が大きくできる。さらに
、第4図(b)の様に両面に電極を附与すると、dが倍
増し、印加電圧が低減できる。However, when looking at a cross-sectional view of this comb-shaped pattern, as shown in Figure 3, the range in the thickness direction where a sufficient electric field is applied to change the plane of polarization (range d in Figure 3, hereinafter referred to as d) is It is only a part near the surface. Therefore, if a groove-shaped comb-pattern electrode structure is used as shown in FIG. 4(a), d expands to the inside, and the polarization plane can change greatly even with the same electric field. Furthermore, if electrodes are provided on both sides as shown in FIG. 4(b), d doubles and the applied voltage can be reduced.
以上のような方法で印加電圧を低減できると、発信回路
での制御速度の高速化が図れ、PLZTの高速応答性が
充分に発揮できる。そこで、電極の形成方法か重要か技
術となる。If the applied voltage can be reduced by the method described above, the control speed of the oscillation circuit can be increased, and the high-speed response of PLZT can be fully demonstrated. Therefore, the method of forming the electrodes becomes an important technology.
殻的に櫛形パターンのような複雑なパターン電極を形成
するにはフォトリソグラフィーの手法が好適であり、こ
れとケミカルエツチングを組み合わせると容易に溝加工
できる。例えば材質がアルミナの場合の例が東洋錆密工
業(株)の[セラミックエツチング」である。しかし、
PLZTに応用するにはBHHBがあって採用されて
いなかった。こわは従来既知のエツチング液では腐食力
が強く、フォトレジストて覆われているPLZTの部分
をもエツチングしてしまうためPIZTか失透するとい
う問題点が生しるためである。Photolithography is suitable for forming electrodes with complex patterns such as comb-like patterns, and grooves can be easily formed by combining this with chemical etching. For example, when the material is alumina, Toyo Sabimitsu Kogyo Co., Ltd.'s [Ceramic Etching] is an example. but,
BHHB was required for application to PLZT and was not adopted. The reason for the stiffness is that conventionally known etching solutions are highly corrosive and will etch the PLZT portion covered with photoresist, resulting in the problem of devitrification of the PIZT.
そこで、現在の−・般的な方法は、フォトレジストを付
けたPLZTをダイシングソーに代表される機械的加工
を施し溝加1を行う方法になっている。Therefore, the current common method is to perform grooving 1 by subjecting PLZT coated with photoresist to mechanical processing, typically using a dicing saw.
[発明が解決しようとする課題]
溝型電極を形成するため溝加工を行う際、機械加工では
試料のチッピングやクラッタなどの欠損の問題と、−本
ずつ満を掘っていくため、特に両面に溝電極を形成する
場合など時間的に非寸産的であるという問題かある。[Problems to be solved by the invention] When machining grooves to form groove-shaped electrodes, mechanical machining has problems with chips such as chipping and clutter of the sample, and because the holes are fully excavated one by one, there are problems especially on both sides. There is a problem in that it is unproductive in terms of time, such as when forming groove electrodes.
また、アルミナで用いらねている既知の技術であるケミ
カルエツチングては、量産性はあるものの、Pl、ZT
にそのまま適用すると過g蝕によるPLZTの失透の問
題がある。In addition, chemical etching, which is a known technique used for alumina, is suitable for mass production, but
If applied as is, there is a problem of devitrification of PLZT due to excessive g-erosion.
本発明の課題は、PLZTの電極加工において、フォト
リソグラフィーの手法を応用し、P 17.Tの失透を
生じること無く、ケミカルエツチングの手法を可能にす
る方法を提供することにある。The object of the present invention is to apply photolithography techniques to the processing of PLZT electrodes. The object of the present invention is to provide a method that enables chemical etching without causing devitrification of T.
[課題を解決するための手段]
この目的を達成するだめの本発明に係る電極形成方法は
、ランタン変性ジルコン酸チタン酸鉛(pH’)に電極
を附与する方法において、フォトリソグラフィーの手法
を用いて櫛形パターンを形成した後、ケミカルエツチン
グにより満を形成し、電極を附写し、溝型電極を形成す
ることを特徴とする。[Means for Solving the Problems] In order to achieve this object, the electrode forming method according to the present invention is a method of providing an electrode to lanthanum-modified lead zirconate titanate (pH'), which uses a photolithography technique. The method is characterized in that after a comb-shaped pattern is formed using the etchant, a groove is formed by chemical etching, and an electrode is affixed to form a groove-shaped electrode.
以下本発明の詳細な説明する。The present invention will be explained in detail below.
Pl、ZTは一般にPb++−x+1.ax(ZryT
!++−y+)+−xz<0+て示される組成を有する
が、本発明の場合は上式の全一〇の成分系で適用できる
。Pl, ZT is generally Pb++-x+1. ax(ZryT
! ++-y+)+-xz<0+ However, in the case of the present invention, all 10 component systems of the above formula can be applied.
まず、Pl、ZTの表面にフォトレジスト膜をコーティ
ングし、所定の電極パターンを持つマスクを用いて露光
・現像を行い、パターン部分のみレジスト膜が剥がれ試
料面が露出するようにする。この際のフォトレジストの
種類は、エツチング液に対する耐久性・パターンの集積
度によって決定される。例えば、後記のエツチング液を
用いて 100μmの幅の満を200μ1T11N■に
形成する場合は、ポジ型で耐食性のある八Z1350J
なとでよい。なお、電極附午の際に無電解めっきを用い
る場合はめっき液などに対する耐久性をも考慮する必要
か有る。First, a photoresist film is coated on the surfaces of Pl and ZT, and exposure and development are performed using a mask having a predetermined electrode pattern, so that only the patterned portions of the resist film are peeled off and the sample surface is exposed. The type of photoresist used at this time is determined by its durability against etching liquid and the degree of pattern integration. For example, when forming a full width of 100μm with 200μ1T11N■ using the etching solution described below, use the positive type and corrosion resistant 8Z1350J.
Nato is fine. In addition, when electroless plating is used for electrode application, it is necessary to consider durability against plating solutions and the like.
この際に、フォトレジストの厚みは1〜・1μmがよい
。薄いとエツチング液に腐蝕されマスクとしての役割を
果たさないし、厚いとPl、ZTとの活着性が悪くパタ
ーンの端部分からエツチング中に¥11殖してしまう。At this time, the thickness of the photoresist is preferably 1 to 1 μm. If it is thin, it will be corroded by the etching solution and will not function as a mask, and if it is thick, the adhesion to Pl and ZT will be poor and it will grow from the edges of the pattern during etching.
溝深さにより多少の厚みの変化はあるか、例えば20μ
mの満であるなら2μmのJugみとすわばよい。Is there a slight change in thickness depending on the groove depth? For example, 20μ
If it is less than m, it is sufficient to use a jug of 2 μm.
次に、バターニングしたレジスト膜付きの試料をエツチ
ング液中に入れる。エツチング液としてはフッ酸と硝酸
の混合水溶液でよい。特に濃度が重要であるが、濃度は
目標の溝形状とフォトレジストの耐食性とで決定される
。Next, the sample with the patterned resist film is placed in an etching solution. The etching solution may be a mixed aqueous solution of hydrofluoric acid and nitric acid. The concentration is particularly important, and the concentration is determined by the target groove shape and the corrosion resistance of the photoresist.
この際、エツチングの効率を上げるためにエツチング液
を加熱したり、バブリングしたり、工・・Iチンク液を
攪拌するなどの方法を用いてもよい。At this time, methods such as heating the etching solution, bubbling it, or stirring the etching solution may be used in order to improve the etching efficiency.
・溝の深さはこのケミカルエツチングの時間に依存する
。エツチング液から取り出し、蒸留水などでエツチング
液をきれいに洗浄し、腐蝕反応、を終結させる。・The depth of the groove depends on the time of this chemical etching. Remove it from the etching solution and clean the etching solution with distilled water to terminate the corrosion reaction.
次に、レジストを付けたまま電極を附与し、最後にレジ
ストを剥にし、溝型パターン電極が得られる。電極附与
の方法は、真空蒸着・スパッタリング・無電解めっきな
どいずれでもよく、エツチングしであるためアンカー効
果により電極の剥がれ難さも向上している。なお、無電
解めっきを用いると、溝の壁面にも一様に電極を付けら
れるため、電場の一様性が向1する。また、触媒化の段
階でレジスト剥離が行えるため、電極を付けた後に剥離
するより簡便になる。Next, an electrode is applied with the resist still attached, and finally the resist is peeled off to obtain a groove-shaped patterned electrode. The electrode may be provided by any method such as vacuum evaporation, sputtering, or electroless plating, and since etching is used, the anchor effect improves the resistance of the electrode to peeling off. Note that when electroless plating is used, the electrodes can be uniformly applied to the wall surfaces of the grooves, which improves the uniformity of the electric field. Furthermore, since the resist can be peeled off at the stage of catalyzing, it is easier than peeling off after attaching the electrode.
[作用]
本発明によると、櫛形パターンの溝加工が非常に簡便と
なり量産化にも適する。また、無電解めっきを組み合わ
せると電場の一様性が向上し、印加電圧の低減および信
頼性の向上に寄与する。[Function] According to the present invention, the groove machining of the comb-shaped pattern becomes very simple and is suitable for mass production. Furthermore, when combined with electroless plating, the uniformity of the electric field improves, contributing to reducing the applied voltage and improving reliability.
[実施例〕
(実施例1)
直径20mm厚ミ0.51mm組成9/65/35 (
D PLZTウェハーを蒸留水・アセトンでよく洗浄し
た後、スピンコーターを用いてポジ型フォトレジスト^
Z1350Jを膜圧2IJI11になる様にコーティン
グし、水銀灯を用いた露光機により満幅約100JJI
11.溝間隔約200μmの櫛形状パターンを構成した
。[Example] (Example 1) Diameter 20 mm Thickness 0.51 mm Composition 9/65/35 (
D After thoroughly cleaning the PLZT wafer with distilled water and acetone, apply a positive photoresist using a spin coater.
Z1350J was coated to a film thickness of 2IJI11, and the full width was approximately 100JJI using an exposure machine using a mercury lamp.
11. A comb-shaped pattern with a groove interval of approximately 200 μm was constructed.
パターニングしたフォトレジストの付いたPLZTを0
.47molXの弗化水素と0.90%の硝酸の混合水
溶液中につけ込み、2分毎にタップ洗いの要領で攪拌し
、約15分後に取り出し、蒸留水でよく洗浄した。0 PLZT with patterned photoresist
.. It was immersed in a mixed aqueous solution of 47 molX hydrogen fluoride and 0.90% nitric acid, stirred every 2 minutes as if washing with a tap, and after about 15 minutes was taken out and thoroughly washed with distilled water.
できあがった溝の形状は満幅約11001J、溝間隔約
200μm、満深さ約20μmと目標通りであった。The shape of the completed groove was as expected, with a full width of about 11001 J, a groove interval of about 200 μm, and a full depth of about 20 μm.
レジストを付けたまま金スパツタを行い、厚み約1μm
の金電極を付けた。回り込みにより溝の側壁にも多少は
電極が付いたものと考えられる。この後、試料をアセト
ン中で超音波洗浄し、レジストを剥離し、目標のパター
ン溝電極を得た。Gold spatter is applied with the resist attached to a thickness of approximately 1 μm.
A gold electrode was attached. It is thought that some electrodes were attached to the side walls of the groove due to the wraparound. Thereafter, the sample was ultrasonically cleaned in acetone, the resist was peeled off, and the target patterned groove electrode was obtained.
このようにして作製した光シヤツターと、同じウェハー
から溝型でない表面蒸着型の電極を附与して作製した光
シヤツターの駆動電圧を比較したところ、後者が160
v必要であるのに対し、本発明では 140vと駆動電
圧の低減が成された。When we compared the driving voltages of an optical shutter fabricated in this manner and an optical shutter fabricated from the same wafer with non-groove type surface-deposited electrodes, we found that the latter was 160%
However, in the present invention, the driving voltage was reduced to 140 V.
(実施例2)
直径20mm厚み0.5+am組成9/65/35のP
LZTウェハーを蒸留水・アセトンでよく洗浄した後、
スピンコーターを用いてポジ型フォトレジストAZ13
50Jを膜厚2IJmになる様にコーティングし、水銀
灯を用いた露光機により溝幅約90IJlB、溝間隔約
210umの櫛形状パターンを構成した。(Example 2) P with diameter 20mm thickness 0.5+am composition 9/65/35
After thoroughly cleaning the LZT wafer with distilled water and acetone,
Positive photoresist AZ13 using a spin coater
A comb-shaped pattern with a groove width of about 90 IJlB and a groove interval of about 210 um was formed using an exposure machine using a mercury lamp.
バターニングしたフォトレジ、ストのイ寸いたP L
7.Tを湯煎中て60℃に保っている0、47mol!
t、の弗化水素と0.904t、の硝酸の混合水溶液中
につけ込み、2分毎にタップ洗いの要領で攪拌し、約1
5分後に取り出し、蒸留水でよく洗浄した。Buttered photoresist, strike size P L
7. 0.47 mol of T kept at 60℃ in hot water!
Soak it in a mixed aqueous solution of 1.5 t of hydrogen fluoride and 0.904 t of nitric acid, stir every 2 minutes as if washing with a tap, and add about 1 t of hydrogen fluoride.
It was taken out after 5 minutes and thoroughly washed with distilled water.
できあがった溝の形状は満幅約100μm、溝間隔約2
00JJm、溝深さ約40JJ11であり、はぼ目標の
溝形状にすることができた。The shape of the completed groove has a full width of approximately 100 μm and a groove spacing of approximately 2.
The groove depth was approximately 40JJ11, and the target groove shape could be obtained.
レジストを付けたまま、塩化スズおよび塩化パラジウム
の水溶液中に2〜5分ずつ浸漬した後、アセトン中でタ
ップ洗いしてレジストを除去した。その後、無電解銅め
っきを施し、目標のパターン溝電極を得た。このパター
ンの断面図を第1図に示す。The resist was immersed in an aqueous solution of tin chloride and palladium chloride for 2 to 5 minutes each, and then tap-washed in acetone to remove the resist. Thereafter, electroless copper plating was applied to obtain the target patterned groove electrode. A cross-sectional view of this pattern is shown in FIG.
このようにして作製した光シヤツターと、同じウェハー
から溝型でない表面蒸着型の電極を附与して作製した光
シヤツターの駆動電圧を比較したところ、後者が160
v必要であるのに対し!20vと駆動電圧の低減が成さ
れた。When we compared the driving voltages of an optical shutter fabricated in this manner and an optical shutter fabricated from the same wafer with non-groove type surface-deposited electrodes, we found that the latter was 160%
While v is necessary! The driving voltage was reduced to 20v.
[発明の効果]
本発明によれば、溝加工の工程が簡便で一度に大量処理
できるため、大型形状品や量産化の際に非常に有効であ
る。またフォトマスクを残したまま電極附与ができるた
め無電解めっきの手法を用いることができ、電場の一様
性が向上する非常に優位な方法である。[Effects of the Invention] According to the present invention, the groove machining process is simple and a large amount can be processed at once, so it is very effective for large-sized products and mass production. Furthermore, since electrodes can be applied while leaving the photomask, electroless plating can be used, which is a very advantageous method that improves the uniformity of the electric field.
第1図は無電解めっき法により電極を附与した溝型電極
を形成したPLOTシャッターの断面図である。第2図
は既知である櫛形パターンの模式図である。第3図は第
2図の櫛形電極を形成したPLZTシャッターの断面図
であり、偏光面を充分に回転させ得る電場がかかってい
る範囲をdで表している。第4図は電極を溝型にしたも
のの断面図で(a)は片面、(b)は両面に形成したも
のであり、dか第3図と比較して増加していることを表
している。FIG. 1 is a cross-sectional view of a PLOT shutter in which groove-shaped electrodes are formed by electroless plating. FIG. 2 is a schematic diagram of a known comb pattern. FIG. 3 is a cross-sectional view of a PLZT shutter in which the comb-shaped electrodes shown in FIG. 2 are formed, and d represents the range where an electric field is applied to sufficiently rotate the plane of polarization. Figure 4 is a cross-sectional view of a groove-shaped electrode, where (a) is formed on one side and (b) is formed on both sides, indicating that d has increased compared to Figure 3. .
Claims (1)
電極を附与する方法において、フォトリソグラフィーの
手法を用いて櫛形パターンを形成した後、ケミカルエッ
チングにより満を形成し、電極を附与し、溝型電極を形
成することを特徴とするPLZT透光性セラミックスへ
の溝型電極形成方法。 2、電極の附与が無電解めっき法である請求第1項記載
のPLZT透光性セラミックスへの溝型電極形成方法。[Claims] 1. In a method of providing electrodes to lanthanum-modified lead zirconate titanate (PLZT), a comb-shaped pattern is formed using a photolithography method, and then a fillet is formed by chemical etching to form an electrode. 1. A method for forming a groove-type electrode on PLZT translucent ceramic, the method comprising: imparting a groove-type electrode to a PLZT translucent ceramic. 2. The method for forming groove-shaped electrodes on PLZT translucent ceramics according to claim 1, wherein the electrodes are provided by electroless plating.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9996489A JPH02280114A (en) | 1989-04-21 | 1989-04-21 | Formation of groove-shaped electrode to plzt light transmittable ceramics |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9996489A JPH02280114A (en) | 1989-04-21 | 1989-04-21 | Formation of groove-shaped electrode to plzt light transmittable ceramics |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02280114A true JPH02280114A (en) | 1990-11-16 |
Family
ID=14261362
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9996489A Pending JPH02280114A (en) | 1989-04-21 | 1989-04-21 | Formation of groove-shaped electrode to plzt light transmittable ceramics |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02280114A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998052235A1 (en) * | 1997-05-13 | 1998-11-19 | Mitsubishi Denki Kabushiki Kaisha | Dielectric thin film element and process for manufacturing the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6285218A (en) * | 1985-10-03 | 1987-04-18 | Fuji Photo Film Co Ltd | Optical shutter array and its production |
-
1989
- 1989-04-21 JP JP9996489A patent/JPH02280114A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6285218A (en) * | 1985-10-03 | 1987-04-18 | Fuji Photo Film Co Ltd | Optical shutter array and its production |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998052235A1 (en) * | 1997-05-13 | 1998-11-19 | Mitsubishi Denki Kabushiki Kaisha | Dielectric thin film element and process for manufacturing the same |
US6376889B1 (en) | 1997-05-13 | 2002-04-23 | Mitsubishi Denki Kabushiki Kaisha | Dielectric thin film element and process for manufacturing the same |
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