JPH02275924A - Liquid crystal display device - Google Patents

Abstract

PURPOSE:To obtain the liquid crystal display device which never changes in display quality by providing an active element and picture element electrodes which are manufactured having the same constitution with a display part nearby the display part, sealing them simultaneously with the display part, and using the active element as a sensor for a driving compensating circuit. CONSTITUTION:A similar transparent substrate 1 is used as a counter substrate, and the transparent common picture element electrodes 2 are patterned. Orienting materials 5 such as films of polyimide or hard carbon are provided on two substrates and rubbed, gap materials 6 are put between them together with seal materials, and while the gap is held constant, liquid crystal 7 is charged to constitute the liquid crystal display device. At this time, an element of the same constitution is manufactured as a sensor part nearby the display part area. Thus, the same elements are provided on the same substrate and their characteristic variations are measured and known in detail, so a driving waveform and a voltage can accurately be adjusted. Consequently, the liquid crystal display device which does not change in display quality is obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a liquid crystal display, and is applied to displays of computer terminals and the like.

[Prior art]

Conventionally, temperature compensation has hardly been performed in electro-optical devices using liquid crystals used in electronic watches and calculators, except for a few. However, liquid crystal display devices that display a large amount of information due to multiplex drive have a narrow operating temperature range unless temperature compensation is performed due to the temperature dependence of the liquid crystal.

Therefore, the need for temperature compensation arose. The most commonly used temperature sensor is the thermistor. Thermistors are mainly MnO and Cod.

It is made of transition metal oxides such as NiO, and takes advantage of the property that resistance decreases as temperature increases.
T C (Negative Temperature)
Coefficient) thermistors are most commonly used for temperature compensation. Figure 1 shows the resistance-temperature characteristics of the NTC thermistor. Thermistors are divided into bulk type and thin film type based on the formation process. Bulk type thermistors are manufactured using ceramic technology, which requires pressure forming and firing processes, and glass substrates are the most widely used in liquid crystal display devices.
Second, it has the disadvantage that it is difficult to form directly. Furthermore, bulk thermistors have a drawback of slow thermal response due to their large volume. Furthermore, due to the poor thermal conductivity of the glass substrate widely used in electro-optical devices, there is a difference between the temperature of the thermistor and the temperature of the liquid crystal due to sudden temperature changes, making accurate temperature compensation impossible. There were drawbacks. Furthermore, since it is difficult to form bulk thermistors with high resistance and good reproducibility, there is a drawback that the thermistor consumes a large amount of power. On the other hand, thin film thermistors are formed using vapor deposition techniques. Since thin film thermistors are formed by vapor deposition technology, it is difficult to control the film thickness, and they have the drawback of poor productivity. Furthermore, in addition to changes in temperature, when an element is continuously used, its characteristics may change. In this way, the characteristics of active elements and liquid crystal materials change due to temperature changes and environmental changes. In conventional methods, it was difficult to quickly sense this change and change the drive waveform and voltage without changing the display characteristics.
In No. 22, an MIM element is used as a temperature compensation sensor, but since changes in the characteristics of the active element are not directly measured, the adjustment accuracy is not good.

Furthermore, in JP-A-62-249125, T is used as an active element.
Although it uses a PT and encapsulates a liquid crystal like a display element for characteristic change analysis, there is no mechanism to feed back the information to the drive circuit, and there is a drawback that display compensation cannot be performed.

〔the purpose〕

The present invention overcomes the conventional problems and quickly senses temperature changes in the environment in which the liquid crystal display device is placed and changes in element characteristics due to changes over time, provides feedback to the drive circuit, and constantly improves display quality. An object of the present invention is to provide a liquid crystal display device that does not change.

〔composition〕

As a result of intensive research to achieve the above object, the present inventors have discovered that a liquid crystal layer is provided between a pair of substrates, and is connected to the inner surface of at least one of the substrates via a common electrode and an active element. In a liquid crystal display device having a display section including a plurality of pixel electrodes, an active element and a pixel electrode manufactured with the same configuration as the display section are provided near the display section, and these are connected to the display section. It has been found that the above object can be achieved by providing a liquid crystal display device characterized in that the active element is simultaneously sealed and used as a sensor for a drive compensation circuit.

The liquid crystal display device of the present invention is characterized in that it can be manufactured using a method similar to the manufacturing method of conventional liquid crystal display devices.The difference from the conventional method is that it has a liquid crystal display section as a sensor on the same surface. This is where it is fed back to the drive circuit.

The manufacturing method and configuration of this device will be specifically explained below with reference to the accompanying drawings.

FIG. 1 is an explanatory diagram showing the overall structure of the liquid crystal display device of the present invention, FIG. 2 is an explanatory diagram of a liquid crystal display used in the liquid crystal display section, and FIG. 3 is an explanatory diagram showing the liquid crystal display used in the liquid crystal display. FIG. 2 is an explanatory diagram of an active element.

First, as the substrate 1, a transparent insulating substrate such as glass, plastic, or a flexible plastic substrate is used. A pixel electrode 2 is provided on this transparent substrate, at least one active element 3 is provided for each pixel, and a common wiring 4 is further provided. At this time, the pixel electrode is made of ITO, ZnO:An, Z
It is formed by depositing and patterning a transparent electrode material such as n○:S, Sn○2:sb by several hundred to several thousand people using a method such as sputtering, vapor deposition, or CVD. The active element 3 includes a TPT element using a-8i, poly-8i, etc., a hard carbon film as an insulating layer, and a SiNx
, S i C.

MIM and MS elements using Ta2O3, An203, etc., PIN diodes, and back-to-pack diode varistors are used. The common wiring (upper electrode) 4 is made of the previously used transparent electrode material, AQ, Ni, Cr, Ni-Cr,
It is formed by using a highly conductive material such as Mo, Ta, T1, Au, Ag, Pt, etc., and depositing hundreds to thousands of layers by a method such as sputtering, vapor deposition, or CVD, and then patterning it. A similar transparent substrate is used as the counter substrate, and a transparent common pixel electrode is patterned and attached. At this time, an active element may be attached to each pixel electrode on this counter substrate as well. An alignment material 5 such as polyimide or hard carbon film is attached to these two substrates, rubbed, a sealing material is attached, a gap material 6 is inserted, the gap is kept constant, and the liquid crystal 7 is sealed to display the liquid crystal display. It shall be a device.

At this time, an element having the same configuration may be fabricated as part of the sensor near the display region. For example, to that Leiara 1,
You can do it as shown in Figure 1.

Usually, the electrode extension part 10 and the drive part of the liquid crystal panel are covered by the external part, so that they do not come into direct contact with the mouth. Similarly, the display area can be seen from the outside, but since a portion of the sensor is covered by the exterior part, the display area is not affected in any way, and there is no problem with the appearance.

By providing the same elements on the same substrate and measuring changes in their characteristics, changes in the characteristics of the elements of the display section can be seen in more detail, making it possible to adjust the drive waveform and voltage with high precision.

At this time, changes in element characteristics and display characteristics can be seen in electrical characteristics and optical characteristics, but measurement of optical characteristics requires a large device and cannot be easily measured. There are various electrical characteristics such as the current flowing through the element for a certain waveform, the voltage, or the effective voltage that increases to the liquid crystal side, but since the current value and applied voltage differ depending on each element material and liquid crystal material, the display device was manufactured. The drive voltage and waveform may be controlled by sensing the current or voltage that is easiest to control, so the number is not limited to one.

As for active devices, there are three-terminal devices such as TFTs and two-terminal devices such as metal-insulator-metal (MIM) devices, but MIM devices are advantageous because of their structure and ease of manufacturing method. . Especially when a hard carbon film is used for the insulating layer of the M1M element.

It is particularly desirable because it is possible to manufacture a high-quality liquid crystal display device with a large area and few defects depending on the method of manufacturing the hard carbon film and the conditions such as film quality.

A hard carbon film is a hard carbon film containing at least one of amorphous and microcrystalline materials with carbon atoms and hydrogen atoms as the main structure-forming elements.It is also called a 0-C film, a diamond-like carbon film, an amorphous diamond film, and a diamond thin film.) It consists of One feature of the hard carbon film is that since it is a vapor-phase grown film, its physical properties can be controlled over a wide range by controlling the film forming conditions, as will be described later. Therefore, even though it is called an insulating film, its resistance value covers the range from semi-insulator to insulator, and in this sense, the MIM element of the present invention is an MSI element (M6
jal-5emi-Insulator).

The current-voltage characteristics of the MIM element of the present invention are shown in FIG. 4, and are approximately expressed by the conduction equation shown below.

■=χexp (βv1/-)...(1)1:
Current V: Impression pressure χ: Conductivity coefficient β: Poole-Frenkel coefficient The hard carbon film in the present invention will be explained in detail.

An organic compound gas, especially a hydrocarbon gas, is used to form a hard carbon film. The phase state of these raw materials does not necessarily have to be a gas phase at normal temperature and pressure; they can be used in either a liquid or solid phase as long as they can be vaporized through melting, evaporation, sublimation, etc. by heating or reduced pressure. be.

Regarding hydrocarbon gas as a raw material gas, for example, C1
14,C,,H,,C3HIl,C4H,. Gases containing at least all hydrocarbons such as paraffinic hydrocarbons such as C211, acetylenic hydrocarbons such as C211, olefinic hydrocarbons, acetylenic hydrocarbons, diolefinic hydrocarbons, and even aromatic hydrocarbons can be used. It is.

Furthermore, other than hydrocarbons, compounds containing at least carbon element can be used, such as alcohols, ketones, ethers, esters, CO2CO2, etc.

The method of forming a hard carbon film from a raw material gas in the present invention is a method in which the film-forming active species is formed through a plasma state generated by a plasma method using direct current, low frequency, high frequency, microwave, etc. However, since the deposition is performed under low pressure for the purpose of increasing the area, improving uniformity, and forming a film at a low temperature, a method using a magnetic field effect is more preferable. Active species can also be formed by thermal decomposition at high temperatures. In addition, it may be formed through an ionic state generated by ionization vapor deposition, ion beam vapor deposition, etc., or may be formed from neutral particles generated by vacuum vapor deposition, sputtering, etc. However, it may also be formed by a combination of these.

An example of the deposition conditions for the hard carbon film produced in this manner is as follows in the case of the plasma CVD method.

Deposition temperature: Room temperature to 950°C Due to this plasma state, the raw material gas is decomposed into radicals and ions and reacts, so that carbon atoms (C) are deposited on the substrate.
A hard carbon film containing at least one of an amorphous material (amorphous) and a microcrystalline material (crystal size is several tens to several micrometers) is deposited. Further, various properties of the hard carbon film are shown in Table 1.

Table 1 Note) Measurement method: Specific resistance (ρ): Determined from the IV characteristics of a coplanar cell.

Optical band gap (Egopt): Determined by determining the absorption coefficient (α) from the spectral characteristics.

Amount of hydrogen in the film (C): 29 from infrared absorption spectrum
It is determined by integrating the peak near 00 cm-1 and multiplying by the absorption cross section A. That is, CI, =A-f a (w)/v-dvS P3/S
P2 ratio: The infrared absorption spectrum is determined by SF3. It is decomposed into Gaussian functions respectively attributed to SF2, and determined from the area ratio thereof.

Vickers hardness (++): Based on micro Vickers meter.

Refractive index (n): by ellipsometer.

Defect density: Based on ESR.

The hard carbon film thus formed was measured using Raman spectroscopy and IR spectroscopy.
As a result of analysis by absorption method, it was revealed that there were interatomic bonds in which the carbon atoms formed the SF3 hybrid orbital and the SF3 hybrid orbital, as shown in Figures 5 and 6, respectively. There is. The ratio of SP3 binding to SP2 binding is IR
It can be roughly estimated by separating the peaks of the spectrum. I
In the R spectrum, many mode spectra from 2800 to 3150 resistance-1 are measured to overlap, but the attribution of the peak corresponding to each wave number has been clarified, and the 7th
As shown in the figure, if you perform peak separation using Gaussian distribution, calculate the area of each peak, and find the ratio, SP3/S
P2 can be known.

Further, according to X-ray and electron diffraction analysis, it has been found that it is in an amorphous state (a-C: o) and/or an amorphous state containing microcrystalline grains of about 50 to several μm in size.

In the case of plasma CVD method, which is generally suitable for mass production,
The lower the RF high output, the higher the specific resistance and hardness of the film, and the lower the pressure, the longer the life of the active species. There is a tendency to increase. Furthermore, since the plasma density changes at low pressure, the method using the magnetic field confinement effect is
It is particularly effective in increasing specific resistance.

Furthermore, this method has the characteristic that it can form a high-quality hard carbon film even under relatively low temperature conditions of about room temperature to 150°C, making it ideal for lowering the temperature of the MIM device manufacturing process. It is. Therefore, the degree of freedom in selecting the substrate material to be used is increased, and the substrate temperature can be easily controlled, so that a uniform film can be obtained over a large area.

In addition, the structure and physical properties of the hard carbon film are as shown in Table 1.
Since it can be controlled over a wide range, there is also the advantage that device characteristics can be designed freely. Furthermore, the dielectric constant of the film is 3 to 5, which is Ta205, which is conventionally used in MIM. AQ20
3. Since it is smaller than SiNx, when producing an element with the same capacitance, the element size only needs to be larger, so microfabrication is not required as much, and the yield is improved.

(Due to the relationship between the driving conditions, the capacitance Ed of the LCD and the MIM element is LC at duty ratio
D drive becomes possible and a high-density LCD can be realized. Furthermore, since the film has high hardness, there is little damage caused by the rubbing process during encapsulation of the liquid crystal material, which also improves yield.

In view of the above points, by using a hard carbon film, a low cost 1-1, good gradation (color) and high density LCD can be realized.

In addition to carbon atoms and hydrogen atoms, this hard carbon film
It may contain as a constituent element an element of group Ⅰ, an element of group ②, an element of group V of the periodic table, an alkali metal element, an alkaline earth metal element, a nitrogen atom, an oxygen atom, a chalcogen-based element, or a halogen atom. For those in which a Group Ⅰ element of the periodic table, a Group V element, an alkali metal element, an alkaline earth metal element, nitrogen atom, or oxygen atom are introduced as one of the constituent elements, the thickness of the hard carbon film is non-doped. about 2 compared to
It is possible to increase the thickness by ~3 times, and thereby prevent the occurrence of pinholes during device fabrication, and dramatically improve the mechanical strength of the device. Furthermore, in the case of nitrogen atoms or oxygen atoms, the periodic table No.
There is an effect similar to that of group elements.

Similarly, devices that incorporate Group 1V elements of the periodic table, chalcogen elements, or halogen elements dramatically improve the stability of the hard carbon film, and also improve the hardness of the film, resulting in highly reliable elements. can be made. These effects can be obtained in the case of group Ⅰ elements and chalcogen-based elements because they reduce the active double bonds present in the hard carbon film, and in the case of halogen elements, ]) abstraction for hydrogen The reaction promotes the decomposition of the raw material gas and reduces the number of dunk rings in the film, and 2) during the film formation process, the halogen element X pulls out hydrogen in the C-H bond and replaces it,
This is because it enters the film as a -X bond and the bond energy increases (the bond energy between C-H and between C-X is larger for C-X).

In order to use these elements as constituent elements of the film, in addition to hydrocarbon gas and hydrogen, the raw material gases must include elements from group 1, group Ⅰ, and group Ⅰ of the periodic table. , alkali metal elements, alkaline earth metal elements, nitrogen atoms, oxygen atoms,
In order to contain chalcogen elements or halogen elements, compounds (or molecules) containing these elements or atoms (
Hereinafter, these may also be referred to as "other compounds").

Examples of compounds containing group nr elements of the periodic table include B(OC2H9), B21(6, BCQ, 3
．． B13r3゜BF3. A Q (0-1, -C3
117)3. (CH3), A Q, (C2t15
)3AQ.

1-C4H9) 3A Q I A Q CQ 3. G
a(0-i-C3H,,)3. (CH3)3Ga
+ (C2t(,)3 Ga + GaCQ 31 G
aBr 31 (0-1-Ci ”7 LIn, (
C2Hs)3In, etc.

Examples of compounds containing Group Ⅰ elements of the periodic table include 5i
3Hs + (C2HS), l SjH+ S, +,
F415IH2Cα21SiCL,,Sj (OC1+
3) 4 1 5i (QC2If5) 4, Sj
(QC, Hl)4.

GeCQ4. GeH, ,Ge(OC2H5)4.
Ge(C2It5)4. (Cl13)4Sn, (
C2115) 4Sn, Sn(,Q, etc.).

Examples of compounds containing Group Ⅰ elements of the periodic table include p
H,,PF3. PF,, PI2FJ, 1) (1,
F.

PCQ3. PBr3. PO(OCH3)3. P(C2H
5)3. POCQ3゜AsH3, AsCQ3. AsBr
, ASF3. AsF5. AsCQ, 3°SbH3,,S
bF3. , SbCQ, 3.5b (OC2H5), etc.

As a compound containing an alkali metal atom, for example, Li0
-i-C3H1, Na0-i-C3H7, KO-i-C
There are 3H7 etc.

Examples of compounds containing alkaline earth metal atoms include C
a(OC2H3)3. Mg(OC2H5)3+ (C
zHs)zMg, etc.

Examples of compounds containing nitrogen atoms include nitrogen gas, inorganic compounds such as ammonia, organic compounds having functional groups such as amino groups and cyano groups, and nitrogen-containing heterocycles.

Examples of compounds containing oxygen atoms include oxygen gas, ozone, water (steam), hydrogen peroxide, -carbon oxide, carbon dioxide, carbon suboxide, -nitrogen oxide, nitrogen dioxide, dinitrogen trioxide, and dinitrogen pentoxide. , inorganic compounds such as nitrogen trioxide, hydroxyl groups, aldehyde groups, acyl groups, keyne groups, 21-2 groups,
Examples include organic compounds having functional groups or bonds such as nitroso groups, sulfone groups, ether bonds, ester bonds, peptide bonds, and oxygen-containing heterocycles, as well as metal alkoxides.

Examples of compounds containing chalcogen elements include H2S
, (CI+3)(CH□), 5(C112)4CIl
J, CI□=CllCH25CH2CH=CI-12
, C7II5SC21t5. C21t5SCH,, thiophene, II□Se, (C2115)2Sc, H
There is a 2Te benefit.

Compounds containing halogen elements include, for example, fluorine,
Inorganic compounds such as chlorine, bromine, iodine, hydrogen fluoride, chlorine fluoride, bromine fluoride, iodine fluoride, hydrogen chloride, bromine chloride, iodine chloride, hydrogen bromide, iodine bromide, hydrogen iodide, alkyl halides Organic compounds such as halogenated aryl, halogenated styrene, halogenated polymethylene, and haloform are used.

To manufacture the active device 3, particularly the MIM device, as shown in FIG. 3, first, a transparent electrode material is deposited on the transparent insulating substrate 1 by a method such as vapor deposition or sputtering, and then patterned into a predetermined pattern. Next, a metal thin film for the lower electrode is formed by a method such as vapor deposition or sputtering, and patterned into a predetermined pattern by wet or dry etching to form the lower electrode 8. Second, a hard metal film is formed by a plasma CVD method, an ion beam method, etc. A carbon film 9 is coated. Next, a metal thin film for an upper electrode was coated thereon by a method such as vapor deposition or sputtering, and was patterned into a predetermined pattern to form an upper electrode (common electrode) 4 to obtain an MIM element 3.

Further, unnecessary portions of the lower electrode 8 are removed to expose the transparent electrode pattern, which is used as the pixel electrode 2.

In this case, the configuration of the MIM element is not limited to this, and after the MIM element is created, a transparent electrode is provided on the top layer, a transparent electrode also serves as an upper or lower electrode, and a side surface of the lower electrode. Various modifications are possible, such as one in which an MIM element is formed on the top.

Here, the thickness of the lower electrode, upper electrode and transparent electrode is usually
The numbers range from several hundred to several thousand people, and from several hundred to several thousand people, respectively. The thickness of the hard carbon film is 100 to 8000, preferably 200 to 6000, more preferably 300.
~4000 people.

Next, the material of the MIM element used in the present invention will be explained in more detail.

The materials for the lower electrode 8 include AQ, Ta, and Cr.

Various conductors are used, such as W, Mo, Pt+Ni+transparent conductors.

Next, the material for the two-part electrode (common electrode) 4 is Afl.
, Cr, Ni, Mo, Pt, Ag, Transparent conductor tube Various conductors are used, but Ni, Pt,
Ag is preferred. M using hard carbon film 9 as an insulating film
It can be seen that the symmetry of the IM element does not change even if the type of electrode is changed, and that Poole-Frenkel type conduction is performed from the relationship Q n I ccJ v. Furthermore, from this fact, it can be seen that in the case of this type of MIM element, the combination of the two-part electrode and the lower electrode may be used in any manner. However, the device characteristics (IV characteristics) deteriorate and change depending on the adhesion between the hard carbon film and the electrode and the state of the interface. Considering these factors, N
It turned out that j, Pt, and Ag are good.

The structure of a liquid crystal panel that incorporates MIM elements is basically as follows.
An alignment layer of polyimide, hard carbon, etc. is provided as an alignment film on each of the transparent substrates having a common transparent electrode facing the liquid crystal display substrate obtained as described above, and then subjected to a rubbing treatment.

Next, the respective pixel electrode sides of each substrate are placed inside and faced to each other.
A liquid crystal display device can be obtained by laminating them together using a gear system and then sealing a liquid crystal material into the cells thus formed.

Although the above two liquid crystal display devices have been described as having a black and white display, the present invention is not limited thereto, and may be a color liquid crystal display device in which a color filter is provided inside or outside the cell.

In addition to the display part, it has a sensor with the same structure as the display part.
In addition, as a result of using a hard carbon film for the active element, it becomes possible to manufacture a liquid crystal display device that has a large area, high density, and excellent display quality, and whose display quality does not change even when the environment changes.

Two examples will be shown below.

Example 1 - A Pyrex substrate was used as the transparent substrate. 800 pieces of ITO were deposited by Macnetron sputtering and then patterned to form pixel electrodes. Next, an MTM element using a hard carbon film as an active element was fabricated as follows. First, 1,000 layers of AQ were deposited on the pixel electrode by vapor deposition, and then patterned to form a lower electrode. Second, a hard carbon film was deposited to a thickness of 800 mm as an insulating film, and then patterned by light etching.

Furthermore, Ni was deposited on the hard carbon insulating film to a thickness of 1000 nm by vapor deposition, and then patterned to form a two-part electrode.
It was set as an M element. At this time, M and IM elements were fabricated in addition to the display area, so that they could be drawn out to the outside in the same way as the common wiring.

Next, ITO was deposited to a thickness of 1,000 layers on the other transparent substrate (counter substrate) by sputtering on a Pyrex substrate, and then patterned into stripes to form a common pixel electrode.

Next, a polyimide film is formed as an alignment film on both substrates,
A rubbing process was performed.

Next, these substrates were placed facing each other with each pixel electrode side facing inside, and bonded together with a gap material interposed therebetween, and a commercially available liquid crystal material was further sealed in the cells thus formed to produce a liquid crystal display device. As a sensor for the temperature compensation circuit of this liquid crystal display device, an MIM element outside the display area is used,
The liquid crystal display device was driven.

At this time, the conditions for forming the hard carbon film were, for example, pressure: 0.035 Torr CH4 flow rate: ]O5CCM RF power: 0.21 tl/aJ Temperature: room temperature.

Example 2 800% ITO was used as a transparent electrode material on a plastic substrate.
After the layer was deposited, patterning was performed.

Next, 1,500 layers of AQ were deposited as a lower electrode material and patterned. Next, 1000 hard carbon films were deposited.

Subsequently, 1500 pieces of Ni were deposited as an upper electrode by E and B vapor deposition, and then N5 and hard carbon were patterned in the same pattern.

At this time, MIM elements and pixel electrodes having a similar configuration were formed in areas other than the display area.

Next, as the other transparent substrate (counter substrate), 1000% of ITO was deposited on a plastic film by sputtering.
After depositing it to a thickness of 100 mL, it was patterned into stripes to form a common pixel electrode. Furthermore, a color filter was attached to the opposite side of the pixel electrode to serve as a counter substrate.

Next, a polyimide film was formed as an alignment film on both substrates, and a rubbing process was performed.

Next, these substrates were placed facing each other with each pixel electrode side facing inside, and they were bonded together with a gap material in between, and a commercially available liquid crystal material was then filled in the thus formed cells to create a color liquid crystal display device. . MIM-LC fabricated outside the display area as a sensor for the drive compensation circuit of this liquid crystal display device
D was used. At this time, the conditions for forming the hard carbon film are, for example, pressure: 0.05 Torr CH, flow rate: 7 SCCM, RF power: 0. IW/d temperature: 100°C.

Example 3 A MIM element was provided on a Pyrex glass substrate as one transparent substrate in the following manner. First, Cr was deposited to a thickness of 1000 nm by sputtering, and then patterned to form a lower common electrode.

Next, an 800-layer thick iNx film was formed thereon using SiH4 and NH by the P-CVD method, and then patterned to form an insulating film. Furthermore, Cr was vapor-deposited to a thickness of 2,000 layers and patterned to form an upper electrode. Next, ITO was deposited on the MIM element thus formed by sputtering.
After the film was deposited to a thickness of 0.000 mm, it was patterned to form a pixel electrode.

At this time, MIM elements and pixel electrodes were similarly provided outside the display region.

Next, a Pyrex substrate is used as the counter substrate, and ITO
was deposited to a thickness of 500 by sputtering, and then patterned into stripes to form a common pixel electrode.

Next, a polyimide film was formed as an alignment film on both substrates, and a rubbing process was performed.

Next, these substrates were placed facing each other with each pixel electrode side facing inside, and bonded together with a gap material interposed therebetween, and a commercially available liquid crystal material was further sealed in the cells thus formed to produce a liquid crystal display device. An MIM-L CD fabricated outside the display area was used as a drive compensation sensor for this liquid crystal display device.

Example 4 Transparent quartz is used for the substrate, and pol is used for the switching element.
A thin film transistor element (TPT) using y-Si was used. The configuration of TPT is shown below. poly-8i
was deposited for 1000 times at 850° C. using the low pressure CVD method. 3000 layers of SiO2 were used as the gate insulating film, 1000 layers of Po1y-3 were used as the gate electrode, and 1000 layers of Po1y-3 were used as the gate electrode.
AQ was deposited by sputtering as a drain electrode, and 3
000 people. SiO2 was used as the interlayer insulating film, and the number of people was 8,000. Although a coating method and an impurity diffusion material were used for impurity diffusion into poly-Si, a method such as ion implantation may also be used. After fabricating the TPT, ITO was deposited as a pixel electrode by an 800-person sputtering method and patterned.

At this time, TPT elements were also fabricated outside the display area.

Next, ITO was deposited on a Pyrex substrate as the other transparent substrate (counter substrate) to a thickness of 1,000 layers by sputtering, and patterned into stripes to form a common pixel electrode.

Next, a polyimide film was formed as an alignment film on both substrates, and a rubbing process was performed.

Next, these substrates were placed facing each other with each pixel electrode side facing inside, and bonded together with a gap material interposed therebetween, and a commercially available liquid crystal material was further sealed in the cells thus formed to produce a liquid crystal display device. At this time, the drain voltage change of the TPT element outside the display area was used for drive compensation.

Example 5 A Pyrex substrate was used as the transparent substrate.

Next, 7000 layers of Ni--Cr were deposited as a lower electrode, and then 9000 layers of hard carbon film were deposited. Next, hard carbon N
The i-Cr was sequentially patterned by dry etching. At this time, the Ni--Cr layer of the lower electrode was dry etched so as to have a tapered shape.

Next, 1000 hard carbon films were deposited, followed by ITO.
, B. After 1000 layers were deposited by vapor deposition, it was patterned to form a pixel electrode. At this time, the MIM element is formed on the side surface of the lower electrode. On the surface of the lower electrode, the hard carbon film is sufficiently thick at 1 μm and becomes a highly insulating material, so that it does not function as a nonlinear resistance element.

At this time, an MIM element was similarly fabricated outside the display area.

Next, ITO was deposited to a thickness of 1,000 layers on the other transparent substrate (counter substrate), a flexible plastic film substrate, by sputtering, and patterned into stripes to form a common pixel electrode.

Next, a film was formed on polyimide 1 as an alignment film on both substrates, and a rubbing process was performed.

Next, these substrates were placed facing each other with each pixel electrode side facing inside, and were bonded together with a gap material having a diameter of 5 μm interposed therebetween, and a commercially available liquid crystal material was then sealed in the thus formed cells to create a liquid crystal display device. Ta. MIM-LCD fabricated outside the area as a sensor for the drive compensation circuit of this liquid crystal display device
It was used.

〔effect〕

The liquid crystal display unit, active elements and pixel electrodes with similar configurations are placed in the same area, and changes in their characteristics are directly fed back to the drive circuit, making it possible to respond to changes in characteristics in real time and create a liquid crystal display device with no change in display quality. It becomes possible. Traditionally, temperature sensors and other devices were manufactured and mounted separately, but
In the present invention, a portion of the sensor can be manufactured in the same process, so the number of processes is shortened, yield is improved, and costs are reduced.

[Brief explanation of drawings]

FIG. 1 is an explanatory diagram showing the overall structure of a liquid crystal display device of the present invention, FIG. 2 is an explanatory diagram of a liquid crystal display body, and FIG. 3 is an explanatory diagram of an MIM element (active element). Figure 4 is M
The current-voltage (1-V) characteristics of the IM element are shown. FIG. 5, FIG. 6, and FIG. 7 show the characteristics of the hard carbon film. 1 Transparent substrate 2... Pixel electrode

Claims (1)

[Claims] 1. In a liquid crystal display device having a display section having a liquid crystal layer between a pair of substrates, and a plurality of pixel electrodes connected to the inner surface of at least one of the substrates via a common electrode and an active element. , an active element and a pixel electrode manufactured with the same configuration as the display section are provided near the display section,
A liquid crystal display device characterized in that these are enclosed together with the display section, and the active elements thereof are used as sensors for a drive circuit.