JPH02272733A - Oxide thin film manufacturing device - Google Patents

Abstract

PURPOSE:To decrease the quantity of oxygen to be introduced in a vacuum vessel so as to prevent oxidation of deposition source by making the oxygen introduced in the vacuum vessel generate active oxygen source with synchrotron radiation. CONSTITUTION:Particles evaporated from the deposition source 3 of a vacuum vessel 1a are accumulated on a substrate 5 held by a substrate holder 6 passing through the hole 12 of a partition plate 8. The substrate 5 is maintained at fixed temperature by a heater 7 for heating during deposition. Next, When oxygen is introduced from an oxygen introduction port 9 into a vacuum vessel 1b, the pressure of oxygen inside the vessel 16 is maintained high by the partition plate 8. When synchrotron radiation 11 is introduced into this vessel 1b, active oxygen source is generated near the substrate 5 inside the vessel 1b, and the film in the substrate 5 is oxidated effectively. Moreover, a vacuum exhaust device 2c is provided in the light path of the radiation 11 and the diffusion of oxygen to the radiation source 13 is prevented. Hereby, the quantity of oxygen to be introduced into the device is decreased and the oxidation of deposition source can be prevented.

Description

[Detailed description of the invention] [Industrial application field] The present invention relates to an oxide thin film manufacturing apparatus.

[Prior Art] Conventionally, oxide thin film manufacturing equipment includes equipment that is simply equipped with oxygen introduction means, and equipment that activates oxygen in the equipment using alternating current voltage, direct current voltage, microwave, etc. There was a device that stood out.

[Problems to be Solved by the Invention] However, with conventional oxide thin film manufacturing equipment, it is not possible to sufficiently generate an active oxygen source that effectively oxidizes the thin film, and therefore a large amount of oxygen cannot be pumped into the equipment. had to be introduced. As a result, various problems such as oxidation of the deposition source occurred.

The present invention was made in response to the conventional circumstances described above, and an object of the present invention is to provide an oxide thin film manufacturing apparatus that can generate a sufficient amount of active oxygen source with a small amount of introduced oxygen. shall be.

[Means for Solving the Problems] The present invention is an oxide thin film manufacturing apparatus characterized by comprising an oxygen introduction means and a synchrotron radiation introduction means in a vacuum chamber.

[Function] In the present invention, the oxygen introduced by the oxygen introducing means disposed in the thin film manufacturing apparatus is converted into active oxygen such as ozone by synchrotron radiation introduced by the synchrotron radiation introducing means. is converted into a source, effectively oxidizing the thin film.

The synchrotron radiation used to convert oxygen into an active oxygen source is a powerful and directional light source. Therefore, a sufficient source of active oxygen can be generated locally, ie in close proximity to the substrate. Therefore, there is no need to introduce a large amount of oxygen into the apparatus, and there are no problems such as oxidation of the vapor deposition source.

[Example] Next, an example of the present invention will be described with reference to the drawings.

FIG. 1 is a block diagram of an embodiment of the present invention. In FIG. 1, la and lb are vacuums 4@, 2a and 2b are vacuum evacuation devices for evacuating the respective vacuum chambers 1a and lb. A vapor deposition source 3 and a vapor deposition rate meter 4 are arranged in the vacuum chamber 1a,
The vacuum chamber 1b includes a substrate holder 6 for holding the substrate 5, a heater 7 for heating the substrate, a synchrotron radiation inlet 10 for introducing synchrotron radiation 11 generated from a synchrotron radiation light source 13 into the vacuum chamber 1b, and Oxygen inlet 9
is installed. Further, the vacuum chambers 1a and 1b are separated by a partition plate 8 in which a hole 12 is formed.

Next, the operation of the oxide thin film manufacturing apparatus configured as above will be explained.

Vacuum chambers 1a and lb are maintained in vacuum by evacuation devices 2a and 2b. The particles evaporated from the evaporation source 3 are
It passes through the hole 12 provided in the partition plate 8, reaches the substrate 5 held by the substrate holder 6, and is deposited on the substrate. During vapor deposition, the substrate 5 is heated by a substrate heating heater 7 and kept at a constant temperature. Oxygen is introduced into the vacuum chamber 1b from the oxygen inlet 9, but because of the partition plate 8, the oxygen partial pressure in the vacuum chamber 1b is kept high and the oxygen partial pressure in the vacuum chamber 1a is kept low. Synchrotron radiation light 11 is introduced into this high oxygen partial pressure vacuum chamber 1b through a synchrotron radiation light introduction port 10. This synchrotron radiation light 11 generates an active oxygen source near the substrate 5 in the vacuum chamber 1b,
The thin film is effectively oxidized. Also, synchrotron radiation 1
A vacuum evacuation device 2c is disposed in the optical path of 1,
Diffusion of oxygen into the synchrotron radiation light source 13 can be prevented.

As described above, an oxide thin film could be formed on a substrate using this apparatus.

[Effects of the Invention] As explained above, according to the oxide thin film production apparatus of the present invention, by generating an active oxygen source using synchrotron radiation, it is possible to reduce the oxygen layer introduced into the apparatus. This makes it possible to solve problems such as oxidation of the vapor deposition source.

[Brief explanation of drawings]

FIG. 1 is a block diagram of an embodiment of the present invention. la, lb... Vacuum chambers 2a, 2b, 2c... Vacuum exhaust device 3... Vapor deposition source 4... Vapor deposition rate meter 5... Substrate
6...Substrate holder 7...Substrate heating heater 8...Partition plate 9...Oxygen introduction port 10...
・Synchrotron radiation inlet 11... Synchrotron radiation light 12... Hole 13... Synchrotron radiation light source Figure 1

Claims (1)

[Claims] (1) An oxide thin film manufacturing apparatus characterized in that it comprises an oxygen introduction means and a synchrotron radiation introduction means in a vacuum chamber.