JPH0226862A - Production of silica sintered body - Google Patents
Production of silica sintered bodyInfo
- Publication number
- JPH0226862A JPH0226862A JP17664988A JP17664988A JPH0226862A JP H0226862 A JPH0226862 A JP H0226862A JP 17664988 A JP17664988 A JP 17664988A JP 17664988 A JP17664988 A JP 17664988A JP H0226862 A JPH0226862 A JP H0226862A
- Authority
- JP
- Japan
- Prior art keywords
- silica
- sintered body
- silica powder
- pts
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000843 powder Substances 0.000 claims abstract description 16
- 238000007731 hot pressing Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 7
- 239000000654 additive Substances 0.000 claims description 3
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 6
- 239000002245 particle Substances 0.000 abstract description 4
- 239000000919 ceramic Substances 0.000 abstract description 3
- 229910052761 rare earth metal Inorganic materials 0.000 abstract 1
- 238000003980 solgel method Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- 229910002016 Aerosil® 200 Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は、シリカを基体とする焼結体を低温で製造する
方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a method for producing a sintered body based on silica at a low temperature.
これまで、シリカ焼結体を製造するためには、1500
℃以上の高温で溶融させたシリカを冷却する溶融法と、
溶液中で作ったシリカゲルを乾燥させて、1000℃程
度に加熱するゾル・ゲル法が行なわれている。しかし、
前者の溶融法では高温を必要とするという問題があり、
一方、後者のゾル・ゲル法ではゲルの収縮で焼結の途中
で形状が変化するという問題がある。従って、従来から
の方法では低温で形状の正確なシリカ焼結体を得ること
は困難である。Until now, in order to manufacture silica sintered bodies, 1500
A melting method that cools silica melted at a high temperature of ℃ or higher,
A sol-gel method is used in which silica gel made in a solution is dried and heated to about 1000°C. but,
The former melting method has the problem of requiring high temperatures;
On the other hand, the latter sol-gel method has the problem that the shape changes during sintering due to contraction of the gel. Therefore, it is difficult to obtain a silica sintered body with an accurate shape at a low temperature using conventional methods.
本発明は、低温で形状の正確なシリカ焼結体を製造し得
る方法を提供することを目的とする。An object of the present invention is to provide a method that can produce a silica sintered body with an accurate shape at a low temperature.
本発明の方法は、シリカ超微粉末を高真空中で温度50
0〜800℃でホットプレスすることにより、形状の正
確なシリカ焼結体を製造する方法である。The method of the present invention involves processing ultrafine silica powder in a high vacuum at a temperature of 50°C.
This method produces a silica sintered body with an accurate shape by hot pressing at 0 to 800°C.
本発明で用いるシリカ超微粉末は、平均粒径500Å以
下、好ましくは50〜200人の範囲のものである。微
細なもの程好ましい。このシリカ超微粉末には、必要に
応じ、希土類酸化物等の超微粉末を添加することができ
る。その添加量は、シリカ超微粉末100重量部に対し
、0〜30重量部、好ましくは1〜5重量部の割合であ
る。シリカと希土類酸化物の複合酸化物の超微粉末を出
発原料として用いることもできる。このような添加剤の
使用によリ、シリカを基体とした多成分のガラスやセラ
ミック焼結体を得ることができる。The ultrafine silica powder used in the present invention has an average particle size of 500 Å or less, preferably in the range of 50 to 200 Å. The finer it is, the more preferable it is. Ultrafine powder of rare earth oxide or the like can be added to this ultrafine silica powder, if necessary. The amount added is 0 to 30 parts by weight, preferably 1 to 5 parts by weight, per 100 parts by weight of ultrafine silica powder. Ultrafine powder of a composite oxide of silica and rare earth oxide can also be used as a starting material. By using such additives, multi-component glass or ceramic sintered bodies based on silica can be obtained.
スする。この場合、加熱温度は500〜800℃、好ま
しくは550〜700℃である。真空条件としては、1
0″”−10−’Torr、好ましくは10−’−10
−’ Torrの高真空が採用される。プレス圧は、0
.05〜10ton/aJ、好ましくは0.1−0.5
ton/jである。To do so. In this case, the heating temperature is 500-800°C, preferably 550-700°C. As for the vacuum conditions, 1
0''''-10-'Torr, preferably 10-'-10
-' Torr high vacuum is employed. Press pressure is 0
.. 05-10ton/aJ, preferably 0.1-0.5
ton/j.
[発明の効果〕
本発明の方法によれば、単成分のシリカ焼結体の他、適
当な添加剤を加えることにより、シリカ科
を基体とし〒多成分のガラスやセラミックスの焼結体を
低温で、形状正確に製造することができる。[Effects of the Invention] According to the method of the present invention, in addition to single-component silica sintered bodies, by adding appropriate additives, multi-component glass or ceramic sintered bodies with silica family as a base can be made at low temperature. The shape can be manufactured accurately.
本発明では、従来法のように高温に加熱しないので、容
器等からの不純物の混入もさけられるし、多成分のガラ
スを作るときに問題となる相分離や結晶化の問題もさけ
られる。また、従来のゾル・ゲル法のように有機物を原
料に用いることがないので、炭素等が不純物として混入
することもさけられる。また、真空排気を徹底的に行な
えば、水分も徹底的に除去できる。また、ホットプレス
の条件により、非常に多孔性の焼結体を作ることもでき
るし、−軸のプレスによるひずみを残留させることによ
り、異方性の強いガラスも製造できる。In the present invention, unlike conventional methods, the glass is not heated to high temperatures, so it is possible to avoid the contamination of impurities from containers, etc., and also to avoid the problems of phase separation and crystallization that occur when producing multi-component glasses. Furthermore, unlike the conventional sol-gel method, organic matter is not used as a raw material, so contamination of carbon and the like as impurities can be avoided. Moreover, if the vacuum is thoroughly evacuated, moisture can also be thoroughly removed. In addition, depending on the conditions of hot pressing, a highly porous sintered body can be made, and by allowing the strain caused by pressing on the -axis to remain, it is also possible to manufacture glass with strong anisotropy.
次に実施例によって本発明をさらに詳細に説明する。 Next, the present invention will be explained in more detail with reference to Examples.
実施例
原料のシリカ超微粉末としては、日本アエロジル社製の
アエロジル200(粒径は約12nm)を用いた。Aerosil 200 (particle size: about 12 nm) manufactured by Nippon Aerosil Co., Ltd. was used as ultrafine silica powder as a raw material for the examples.
この粉末10.4gを大気にさらしておいたものを、真
空ホットプレス装置(大皿真空技研■H)の中で処理し
た。この場合、ダイスはグラファイト製で、内径501
m+のシリンダー状であり、ダイスの内側の表面には薄
く窒化ホウ素の粉末を塗布した。また、真空排気するま
えに、シリカ超微粉末に0.5tonの荷重をかけ、軽
くつぶした後、真空排気し、5×10−’Paの真空に
なったところで、600℃で4tonの荷重をかけてプ
レスした。このようにして、シリカの焼結体が得られた
。その焼結体ばかさ密度0.642g/am3であり、
充填率は約24%である。色は白色であった。この破断
面を走査型電子顕微鏡でwt察したら、ところどころ数
癖程度の粒子も見られたが、他の大部分はほぼ平滑で一
様であった。10.4 g of this powder, which had been exposed to the atmosphere, was processed in a vacuum hot press device (Osara Shinku Giken ■H). In this case, the die is made of graphite and has an inner diameter of 501 mm.
The die had an m+ cylinder shape, and a thin layer of boron nitride powder was applied to the inner surface of the die. Also, before evacuation, a 0.5 ton load was applied to the ultrafine silica powder, and after crushing it, it was evacuated, and when the vacuum reached 5 × 10-'Pa, a 4 ton load was applied at 600°C. I pressed it. In this way, a sintered body of silica was obtained. The bulk density of the sintered body is 0.642 g/am3,
The filling rate is about 24%. The color was white. When this fractured surface was inspected using a scanning electron microscope, a few irregular particles were observed here and there, but the rest of the surface was almost smooth and uniform.
復代理人sub-agent
Claims (2)
0℃でホットプレスすることを特徴とするシリカ焼結体
の製造方法。(1) Ultrafine silica powder is heated to a temperature of 500 to 800 in a high vacuum.
A method for producing a silica sintered body, characterized by hot pressing at 0°C.
を含有する請求項1の方法。(2) The method according to claim 1, wherein the ultrafine silica powder contains a rare earth oxide as an additive.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17664988A JPH0226862A (en) | 1988-07-15 | 1988-07-15 | Production of silica sintered body |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17664988A JPH0226862A (en) | 1988-07-15 | 1988-07-15 | Production of silica sintered body |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0226862A true JPH0226862A (en) | 1990-01-29 |
JPH0547504B2 JPH0547504B2 (en) | 1993-07-16 |
Family
ID=16017273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17664988A Granted JPH0226862A (en) | 1988-07-15 | 1988-07-15 | Production of silica sintered body |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0226862A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5714112A (en) * | 1994-05-13 | 1998-02-03 | Nec Corporation | Process for producing a silica sintered product for a multi-layer wiring substrate |
CN114349516A (en) * | 2021-12-16 | 2022-04-15 | 郑州大学 | Method for synthesizing high-density SiC ceramic at low temperature |
-
1988
- 1988-07-15 JP JP17664988A patent/JPH0226862A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5714112A (en) * | 1994-05-13 | 1998-02-03 | Nec Corporation | Process for producing a silica sintered product for a multi-layer wiring substrate |
US5728470A (en) * | 1994-05-13 | 1998-03-17 | Nec Corporation | Multi-layer wiring substrate, and process for producing the same |
CN114349516A (en) * | 2021-12-16 | 2022-04-15 | 郑州大学 | Method for synthesizing high-density SiC ceramic at low temperature |
Also Published As
Publication number | Publication date |
---|---|
JPH0547504B2 (en) | 1993-07-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |