JPH02265113A - Manufacture of transparent conductive film - Google Patents
Manufacture of transparent conductive filmInfo
- Publication number
- JPH02265113A JPH02265113A JP8557189A JP8557189A JPH02265113A JP H02265113 A JPH02265113 A JP H02265113A JP 8557189 A JP8557189 A JP 8557189A JP 8557189 A JP8557189 A JP 8557189A JP H02265113 A JPH02265113 A JP H02265113A
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- conductive film
- silicon
- silicon oxide
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 7
- 125000005375 organosiloxane group Chemical group 0.000 claims abstract description 7
- 239000012299 nitrogen atmosphere Substances 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- -1 silicon alkoxide compound Chemical class 0.000 claims abstract description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 abstract description 13
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 7
- 150000003377 silicon compounds Chemical class 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 241000218645 Cedrus Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- DVQHRBFGRZHMSR-UHFFFAOYSA-N sodium methyl 2,2-dimethyl-4,6-dioxo-5-(N-prop-2-enoxy-C-propylcarbonimidoyl)cyclohexane-1-carboxylate Chemical compound [Na+].C=CCON=C(CCC)[C-]1C(=O)CC(C)(C)C(C(=O)OC)C1=O DVQHRBFGRZHMSR-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、液晶デイスプレィ等に用いる金属酸化物系の
透明導電膜の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a method for manufacturing a metal oxide-based transparent conductive film used for liquid crystal displays and the like.
〈従来の技術〉
液晶デイスプレィは、従来のＣＲＴデイスプレィに比較
し、薄型、軽量、省電力であることからその研究が活発
化してきている。近年、テレビやＯＡ機器の平面表示デ
バイスとして要望も高く、ますます開発に対する期待も
高まっている。その液晶デイスプレィに用いられる金属
酸化物系透明導電膜の液晶と接する画像表示部分は、液
晶デイスプレィの長寿命化、安定化等をはかるために酸
化珪素（ＳｉＯ□）の保護膜で覆われている。従来その
酸化珪素（Ｓｔｏｗ）の保護膜は、蒸着、スパッタ、Ｃ
ＶＤ等の製造方法で形成していた。<Prior Art> Research into liquid crystal displays has been active because they are thinner, lighter, and more energy efficient than conventional CRT displays. In recent years, there has been a high demand for flat display devices for televisions and OA equipment, and expectations for their development are increasing. The image display part of the metal oxide-based transparent conductive film used in the liquid crystal display that comes into contact with the liquid crystal is covered with a protective film of silicon oxide (SiO□) in order to extend the lifespan and stabilize the liquid crystal display. . Conventionally, the silicon oxide (Stow) protective film was formed by vapor deposition, sputtering, C
It was formed using a manufacturing method such as VD.
〈発明が解決しようとする課題〉
上記のような保護膜の製造方法では、設備が大掛かりに
なり、したがって製造コストも高く、また生産性もよく
ない。さらに、近年、大面積の表示デバイスが要望され
ており大面積化は不可欠で、上記従来方法の製造装置の
大型化は、コスト的にも技術的にも難しくなっている。<Problems to be Solved by the Invention> The method for manufacturing a protective film as described above requires large-scale equipment, resulting in high manufacturing costs and poor productivity. Furthermore, in recent years, there has been a demand for display devices with large areas, and increasing the area is essential, making it difficult to increase the size of manufacturing equipment using the above-mentioned conventional method both in terms of cost and technology.
本発明は、上記問題にかんがめ、酸化珪素（Ｓｉ０ｚ）
保護膜の製造を簡単で生産性の良いゾルゲル法により行
なうもので大面積でも低コスト化が実現可能な製造方法
を提供しようとするものである。In view of the above problems, the present invention provides silicon oxide (Si0z)
The purpose of this invention is to provide a manufacturing method in which the protective film is manufactured by a simple and highly productive sol-gel method, which can realize low cost even in a large area.
く課題を解決するための手段〉
上記問題点を解決するための本発明の透明導電膜の製造
方法は、金属酸化物系の透明導電膜（ＩＴＯ等）上にオ
ルガノシロキサンもしくは、シリコンのアルコキシド化
合物を主体とする溶液をコートし、温度４５０〜５３０
”Ｃの範囲でかつ窒素雰囲気で焼成して酸化珪素保護
膜を形成するものである。又、本発明は、上記窒素雰囲
気に代えて真空雰囲気においても同様に良好な酸化珪素
保護膜の形成が可能である。Means for Solving the Problems> In order to solve the above problems, the method for manufacturing a transparent conductive film of the present invention is to produce an organosiloxane or a silicon alkoxide compound on a metal oxide-based transparent conductive film (ITO, etc.). Coat a solution mainly consisting of
A silicon oxide protective film is formed by firing in a nitrogen atmosphere within the C range.Also, the present invention is capable of forming a silicon oxide protective film equally well in a vacuum atmosphere instead of the nitrogen atmosphere. It is possible.
〈作用〉
本発明は、金属酸化物系の透明導電膜（ＩＴＯ等）上に
オルガノシロキサンもしくは、シリコンのアルコキシド
化合物を主体とする溶液をコートし、温度４５０〜５３
０℃の範囲でかつ窒素雰囲気で焼成して形成することに
より、透明導電膜の抵抗値を増加させずに液晶デイスプ
レィの長寿命化、安定化を図ることの可能な酸化珪素（
ＳｉＯ□）保護膜を形成できる。このようにシリコン化
合物を含んだ溶液をデイツプ又は、印刷法でコートして
乾燥するという簡単な製造方法のため大面積でも比較的
安価な製造設備で行え、生産性も向上する。従って、製
造の低コスト化が図れる。<Function> In the present invention, a metal oxide-based transparent conductive film (ITO, etc.) is coated with a solution mainly composed of organosiloxane or a silicon alkoxide compound, and the temperature is 450 to 53°C.
Silicon oxide (silicon oxide), which can be formed by firing in a nitrogen atmosphere at a temperature of 0°C, can extend the lifespan and stabilize the liquid crystal display without increasing the resistance value of the transparent conductive film.
A protective film (SiO□) can be formed. Since this is a simple manufacturing method in which a solution containing a silicon compound is coated using a dip or printing method and then dried, it can be performed even over a large area using relatively inexpensive manufacturing equipment, and productivity is improved. Therefore, manufacturing costs can be reduced.
〈実施例〉
第１図は、本発明の第一の実施例を工程順に示す説明図
である。まず、第１図（ａ）に於いて、ガラス等の透明
絶縁基板（１）に、表示用電極であるＩＴＯ等の透明導
電膜（２）を形成する。次に第１図（ｂ）に示すように
、日本曹達■製の商品名「アトロン３１０ＳＪ主成分テ
トラエトキシシランＳ ｉ （ＯＣ２Ｈａ ） ａ
の溶液をデイツプ法によりコートして塗膜層（３）を形
成する。次に、第１図（ｃ）に示すようにフメトリソグ
ラフィ法を用いて塗膜層（３）をパクーニングし、次に
窒素置換した焼成炉に入れ、第２図に示す温度履歴（プ
ロファイル）で温度４５０〜５３０℃，３０分の焼成を
行う。その結果、第１図（ｄ）で示すように、緻密な酸
化珪素の保護膜（４）が透明導電膜（２）上に形成でき
る。第３図は本発明の第二の実施例を工程順に示す説明
図である。第３図（ａ）に於いて、透明絶縁基板（１）
に、表示用電極であるＩＴＯ等の透明導電膜（２）をコ
ートする。次に第３図（ｂ）で示す東京応化工業■製の
商品名ｒＯｃＤ」 （ＳｉＯｚ系皮膜杉皮膜形成用塗布
液分オルガノシロキサンを印刷法により選択的にコート
して、塗膜層（５）を形成する。次に窒素置換した焼成
炉に入れ、第２図に示す温度履歴（プロファイル）で温
度４５０〜５３０℃１３０分の焼成を行なう。その結果
第３図（ｃ）で示す緻密な酸化珪素の保護膜（６）が透
明導電膜（２）上に形成できる。<Example> FIG. 1 is an explanatory diagram showing a first example of the present invention in order of steps. First, in FIG. 1(a), a transparent conductive film (2) such as ITO, which is a display electrode, is formed on a transparent insulating substrate (1) such as glass. Next, as shown in FIG. 1(b), the main component tetraethoxysilane Si (OC2Ha) a manufactured by Nippon Soda ■ under the trade name "Atron 310SJ"
A coating layer (3) is formed by coating the solution using a dip method. Next, as shown in Fig. 1(c), the coating layer (3) is paquenned using the fume lithography method, and then placed in a firing furnace purged with nitrogen, and the temperature history (profile) shown in Fig. 2 is obtained. Baking is performed at a temperature of 450 to 530°C for 30 minutes. As a result, as shown in FIG. 1(d), a dense silicon oxide protective film (4) can be formed on the transparent conductive film (2). FIG. 3 is an explanatory diagram showing the second embodiment of the present invention in order of steps. In FIG. 3(a), a transparent insulating substrate (1)
A transparent conductive film (2) such as ITO, which serves as a display electrode, is coated on the film. Next, as shown in FIG. 3(b), an organosiloxane manufactured by Tokyo Ohka Kogyo (trade name: rOcD) (coating solution for forming a SiOz-based cedar film) was selectively coated by a printing method to form a coating layer (5). Next, it is placed in a nitrogen-substituted firing furnace and fired for 130 minutes at a temperature of 450 to 530°C with the temperature history (profile) shown in Figure 2.As a result, a dense oxidation film is formed as shown in Figure 3(c). A silicon protective film (6) can be formed on the transparent conductive film (2).
〈発明の効果〉
以上のように本発明は、簡単な製造方法のため安価な製
造設備で生産性も向上しかつ、透明導電膜の抵抗値の増
加も起こさずに低抵抗な大面積デイスプレィ用電極の製
造が可能である。従って、研究の活発な壁掛はテレビや
ＯＡ機器等の平面表示デバイスの製造の低コスト化に大
きく貢献し、需要の拡大が期待される。<Effects of the Invention> As described above, the present invention improves productivity with inexpensive manufacturing equipment due to the simple manufacturing method, and can be used for large-area displays with low resistance without causing an increase in the resistance value of the transparent conductive film. It is possible to manufacture electrodes. Therefore, wall hangings, which are the subject of active research, will greatly contribute to lower manufacturing costs of flat display devices such as televisions and OA equipment, and demand is expected to expand.
第１図（ａ）〜（ｄ）は、本発明のデイツプコートによ
る一実施例を工程順に示す説明図、第２図は、本発明の
焼成履歴（プロファイル）を示すグラフ図、第３図（ａ
）〜（ｃ）は、本発明の印刷コートによる他の実施例を
工程順に示す説明図である。
（１）・・ 透明絶縁基板
（２）・・ 透明導電膜
（３）・・ テトラエトキシシラン
（４）（６） ・・保護膜
（５）・・ オルガノシロキサン
特 許 出 願 人
凸版印刷株式会社
代表者 鈴木和夫
第１図（ｂ）
第１図（ｄ）
慧戒時Ｐ４
Ｃ暗部）
第３図（ａ）
一一一一４／′
第３図（ｂ）
第３図ＬＣ）Figures 1 (a) to (d) are explanatory diagrams showing an example of the dip coat of the present invention in the order of steps, Figure 2 is a graph diagram showing the firing history (profile) of the present invention, and Figure 3 (a).
) to (c) are explanatory diagrams illustrating another embodiment of the present invention using a printing coat in the order of steps. (1) Transparent insulating substrate (2) Transparent conductive film (3) Tetraethoxysilane (4) (6) Protective film (5) Organosiloxane patent applicant Toppan Printing Co., Ltd. Representative Kazuo Suzuki Figure 1 (b) Figure 1 (d) Keikaiji P4 C dark part) Figure 3 (a) 11114/' Figure 3 (b) Figure 3 LC)
Claims (2)
ンもしくは、シリコンのアルコキシド化合物を主成分と
する溶液をコートし、温度４５０〜５３０℃の範囲でか
つ窒素雰囲気で焼成して酸化珪素の保護膜を形成するこ
とを特徴とする透明導電膜の製造方法。(1) A metal oxide-based transparent conductive film is coated with a solution containing organosiloxane or a silicon alkoxide compound as its main component, and baked in a nitrogen atmosphere at a temperature in the range of 450 to 530°C to protect the silicon oxide. A method for producing a transparent conductive film, the method comprising forming a film.
空中で行うことを特徴とする請求項（１）記載の透明導
電膜の製造方法。(2) The method for manufacturing a transparent conductive film according to claim (1), wherein the baking is performed in a vacuum instead of a nitrogen atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8557189A JPH02265113A (en) | 1989-04-03 | 1989-04-03 | Manufacture of transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8557189A JPH02265113A (en) | 1989-04-03 | 1989-04-03 | Manufacture of transparent conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02265113A true JPH02265113A (en) | 1990-10-29 |
Family
ID=13862500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8557189A Pending JPH02265113A (en) | 1989-04-03 | 1989-04-03 | Manufacture of transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02265113A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001210144A (en) * | 1999-11-10 | 2001-08-03 | Asahi Glass Co Ltd | Substrate having transparent conductive layer and its manufacturing method |
-
1989
- 1989-04-03 JP JP8557189A patent/JPH02265113A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001210144A (en) * | 1999-11-10 | 2001-08-03 | Asahi Glass Co Ltd | Substrate having transparent conductive layer and its manufacturing method |
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