JPH02264952A - Photomask blank and photomask - Google Patents
Photomask blank and photomaskInfo
- Publication number
- JPH02264952A JPH02264952A JP1086622A JP8662289A JPH02264952A JP H02264952 A JPH02264952 A JP H02264952A JP 1086622 A JP1086622 A JP 1086622A JP 8662289 A JP8662289 A JP 8662289A JP H02264952 A JPH02264952 A JP H02264952A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photomask
- fluorine
- nitrogen
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 22
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 19
- 239000011737 fluorine Substances 0.000 claims abstract description 16
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 14
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 36
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 19
- 239000011651 chromium Substances 0.000 claims description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 230000000903 blocking effect Effects 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 5
- 238000005530 etching Methods 0.000 abstract description 29
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000010030 laminating Methods 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000008399 tap water Substances 0.000 description 1
- 235000020679 tap water Nutrition 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は半導体製造用フォトマスクブランクならびにこ
れをエツチング後パターンを形成したフォトマスクに関
する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a photomask blank for semiconductor manufacturing and a photomask in which a pattern is formed after etching the photomask blank.
さらに詳しくは、フォトマスクブランクやフォトマスク
の中でも低反射型のものの膜構成に関する。More specifically, the present invention relates to the film structure of a photomask blank or a low-reflection type photomask.
［従来の技術とその課題］
低反射型のフォトマスクブランクは、第１図に示した構
造を有している。透明基板上に真空蒸着法、スパッタリ
ング法、イオンブレーティング法等によりクロムを積層
させるが、光学濃度が大きく比較的反射率が高いじゃ光
層と、光学濃度が低い反射防止層から成る。従来は、し
や光層はクロム濃度が比較的高く、少量の窒素、酸素、
炭素、フッ素等の元素を添加して形成し、反射防止層は
酸化クロムを中心に窒素、炭素、フッ素等を少量添加し
て形成されて成るものである。[Prior art and its problems] A low reflection type photomask blank has the structure shown in FIG. Chromium is laminated on a transparent substrate by a vacuum evaporation method, a sputtering method, an ion blating method, etc., and consists of a light blocking layer with a large optical density and a relatively high reflectance, and an antireflection layer with a low optical density. Traditionally, the luminescent layer has a relatively high concentration of chromium, with small amounts of nitrogen, oxygen,
It is formed by adding elements such as carbon and fluorine, and the antireflection layer is formed by adding small amounts of nitrogen, carbon, fluorine, etc. to chromium oxide.
フォトマスクブランクは、エツチング後パターンを形成
し、フォトマスクとするが、クロムを中心としたしや光
層と、酸化クロムを中心とした反射防止層ではエツチン
グ間にその界面において局部電池効果が働き、しや光層
のエツチング間には反射防止層のエツチングが抑制され
、最終的には第２図に示すように反射防止層がひさし状
になってしまうという欠点が見られる。このために、よ
り微細なパターンの形成が阻害されてきた。After etching, a pattern is formed on the photomask blank to form a photomask, but a local cell effect works at the interface between the chromium-based luminescent layer and the chromium oxide-based antireflection layer during etching. A drawback is that the etching of the antireflection layer is suppressed during the etching of the luminescent layer, and the antireflection layer eventually becomes eaves-like as shown in FIG. This has hindered the formation of finer patterns.
［課題を解決するための手段］
本発明者はエツチング後の断面形状が、より切り立った
ものである場合には、より微細なパターンが形成される
ことに着目して鋭意検討を重ねた結果、本発明を完成す
るに至った。[Means for Solving the Problems] The inventor of the present invention focused on the fact that a finer pattern is formed when the cross-sectional shape after etching is steeper, and as a result of repeated studies, The present invention has now been completed.
本発明によれば、
透明基板上にクロム、窒素、炭素、フッ素を含むじゃ光
層と、クロム、酸素、窒素、炭素、フッ素を含む反射防
止層とから構成されて成るフォトマスクブランクならび
にこれにパターンを形成したフォトマスクであって、フ
ッ素の元素濃度がしや光層て１〜５重量％、反射防止層
で１０〜２０ｆｆｌｆｆｉ％の範囲にあることを特徴と
するフォトマスクブランクおよびフォトマスクが提供さ
れ、これにより従来からの課題が解決されるものである
。According to the present invention, there is provided a photomask blank comprising a light blocking layer containing chromium, nitrogen, carbon, and fluorine and an antireflection layer containing chromium, oxygen, nitrogen, carbon, and fluorine on a transparent substrate; A photomask blank and a photomask with a pattern formed thereon, characterized in that the elemental concentration of fluorine is in the range of 1 to 5% by weight for the photolayer and 10 to 20% by weight for the antireflection layer. This will solve the problems that have existed in the past.
［作用］
本発明は次の二つの発見に基づいてなされたものである
。[Operation] The present invention was made based on the following two discoveries.
（１）クロムに窒素、酸素などの元素を添加すると、膜
厚方向のエツチングレートは増加するが、その添加量が
十分大きい場合、サイドエツチング速度は著しく減少す
る。(1) When elements such as nitrogen and oxygen are added to chromium, the etching rate in the film thickness direction increases, but if the amount added is sufficiently large, the side etching rate decreases significantly.
（２）エツチング液中における白金電極との電位差につ
いて、クロム、ニッケル・クロム合金等は常に負（白金
をゼロとして）になるが、そのポテンシャルの絶対値が
大きい物質が下地にある場合、上の物質のエツチングレ
ートは単独でエツチングするより速くなり、下地は逆に
遅くなる。(2) Regarding the potential difference with the platinum electrode in the etching solution, chromium, nickel-chromium alloys, etc. are always negative (assuming platinum is zero), but if there is a substance with a large absolute value of the potential on the underlying The etching rate of the material becomes faster than etching alone, while the etching rate of the substrate becomes slower.
（１）の現象は、クロムへの窒素、酸素の添加により、
膜中に歪みが発生しエツチングレートを増加させるもの
と推定される。エツチングの進行に伴い、膜の断面が露
出すると、その部分は応力が緩和され歪みが減少して、
クロム、窒化物または酸化物の本来有する化学的安定性
が現われてエツチングレート（この場合、サイドエツチ
ングレート）が減少するものと推測される。The phenomenon (1) is caused by the addition of nitrogen and oxygen to chromium.
It is presumed that distortion occurs in the film and increases the etching rate. As etching progresses, when a cross section of the film is exposed, the stress in that area is relaxed and the strain is reduced.
It is presumed that the inherent chemical stability of chromium, nitride or oxide appears and the etching rate (in this case, side etching rate) decreases.
また（２）の現象は、サイドエツチングに影響を与える
。例えば２層膜において、下地の方がポテンシャルの絶
対値が大きい場合、上層の膜厚方向のエツチングレート
は、単独の場合より速くなる。ところが上層がエツチン
グされて下層が露出すると、それまで小さかったポテン
シャルが増大し、上層のサイドエツチングレートは著し
く小さくなる。下層自身の膜厚方向のエツチングレート
も単独の場合より小さくなる。Furthermore, the phenomenon (2) affects side etching. For example, in a two-layer film, if the underlying layer has a larger absolute value of potential, the etching rate in the thickness direction of the upper layer will be faster than that of the upper layer alone. However, when the upper layer is etched and the lower layer is exposed, the potential, which was small until then, increases and the side etching rate of the upper layer becomes significantly smaller. The etching rate of the lower layer itself in the film thickness direction is also smaller than that of the lower layer alone.
本発明は該二つの現象を利用してなされたものである。The present invention has been made by taking advantage of these two phenomena.
すなわち、３層＋、Ｍ造のフォトマスクブランクを考慮
した場合、この電気化学的ポテンシャルを、上から順次
大きくすることにより、サイドエツチングを減少させ、
さらに最下層への窒素、酸素の添加量を十分大きくする
ことにより、表面反射防止層と同じく、膜のパターニン
グによる分断により生じる側面の応力緩和（ひいては歪
みの緩和）によるサイドエツチング速度の低下ができる
。That is, when considering a photomask blank with 3 layers + M structure, side etching can be reduced by increasing the electrochemical potential sequentially from the top.
Furthermore, by adding a sufficiently large amount of nitrogen and oxygen to the bottom layer, it is possible to reduce the side etching rate by relaxing stress (and thus alleviating strain) on the side surfaces caused by separation due to film patterning, just as with the surface antireflection layer. .
この両方の条件を酸素、窒素、炭素、クロムの４元素の
みでは全ての条件を溝たすのは難しり、シかも例え全て
の条件を満たしたとしても安定成分範囲が狭い。本発明
はこれに、さらにフッ素を用いることで全ての条件を滴
たすことができる現象を利用したものである。It is difficult to satisfy both of these conditions using only the four elements of oxygen, nitrogen, carbon, and chromium, and even if all the conditions were satisfied, the range of stable components would be narrow. The present invention utilizes the phenomenon that all conditions can be met by further using fluorine.
［実施例］ 次に実施例により本発明をさらに具体的に説明する。[Example] Next, the present invention will be explained in more detail with reference to Examples.
実ｊｔ例−
本発明の３層構造のフォトマスクブランクにおいて、し
や光層は二つに分かれており、第１層がクロムと窒素の
膜、第２層がクロムと窒素と炭素およびフッ素の膜から
構成された。第３層は反射防止層であってクロム、炭素
、酸素、窒素およびフッ素から構成された。第２層中に
は実質的に酸素は存在しなかった。Practical example - In the photomask blank with a three-layer structure of the present invention, the luminous layer is divided into two parts, the first layer is a film of chromium and nitrogen, and the second layer is a film of chromium, nitrogen, carbon, and fluorine. Composed of membrane. The third layer was an antireflection layer and was composed of chromium, carbon, oxygen, nitrogen, and fluorine. Substantially no oxygen was present in the second layer.
前記特許請求の範囲に規定したフッ素濃度範囲は第２層
と第３層におけるフッ素濃度を特定したものである。具
体的な作製方法は次のようであった。The fluorine concentration range specified in the claims specifies the fluorine concentration in the second layer and the third layer. The specific manufacturing method was as follows.
すなわち、例えば溶融石英基板（フォトマス用）を通常
の洗浄法、例えばクロムｆｒｌ酸に数分間浸漬した後、
水道水（フィルターを通してゴミを除去して）でリンス
後、純粋でリンスし、ＩＰＡ蒸気で乾燥させ、マグネト
ロンスパッタリング装置に装着した。That is, for example, after immersing a fused silica substrate (for photomass) in a conventional cleaning method, for example in chromium frl acid for several minutes,
After rinsing with tap water (filtered to remove dust), it was rinsed with pure water, dried with IPA steam, and mounted on a magnetron sputtering device.
基板をセットした真空槽を１．５Ｘ１０−’Ｔｏｒｒま
で排気後、２〜３Ｘ １０−’Ｔｏ ｒ ｒまでアルゴ
ンガスを導入し、逆スパツタクリーニング（基板に高周
波の陰極がくるようにして）シ、表面の吸着水などを除
去した後、再び１．５Ｘ１０−’Ｔｏ ｒ ｒまで排気
して、（ガス導入を止めて）アルゴン６０Ｓｃｃｍ１窒
素１．８Ｓｃｃｍを導入し、５分間直流ＩＡで放電を行
い、プレスバッタリングを行った後、同条件のまま２分
間成膜した。次いでアルゴン５９Ｓｃｃｍｓ窒素２．Ｉ
Ｓｃｃｍ１ＣＦ４０、Ｅ３２Ｓｃｃｍを導入し、プレス
バッタリング後、ＩＡで３分間スパッタリングし、第２
層目を形成させた。第３層目は、続けてアルゴン４ｏｓ
ｃｃｍ１窒素１０Ｓ１０Ｓｃ酸素ＩＳＣＣｍｘ ＣＦ、
４Ｓｃｃｍを導入し、ＩＡで３分間プレスパツタリング
後、２分間スパッタリングし、形成した。After evacuating the vacuum chamber in which the substrate was set to 1.5 x 10-' Torr, introduce argon gas to 2 to 3 x 10-' Torr, and perform reverse sputter cleaning (with the high-frequency cathode facing the substrate). After removing adsorbed water on the surface, it was evacuated again to 1.5 x 10-' Torr, (stopped gas introduction), introduced 60 sccm of argon, 1.8 sccm of nitrogen, and discharged with DC IA for 5 minutes. After performing press battering, a film was formed for 2 minutes under the same conditions. Then argon 59 sccms nitrogen 2. I
Sccm1CF40 and E32Sccm were introduced, and after press battering, sputtering was performed for 3 minutes with IA, and the second
A layer was formed. The third layer continues with 4 os of argon.
ccm1 nitrogen 10S10Sc oxygen ISCCmx CF,
4Sccm was introduced and press sputtering was performed for 3 minutes using IA, followed by sputtering for 2 minutes to form the film.
オージェ電子分光分析による各膜中の元素分布を示すと
第３図のようであった。Figure 3 shows the elemental distribution in each film as determined by Auger electron spectroscopy.
該試料のその他のデータは次のようであった。Other data of the sample were as follows.
光学濃度（０，Ｄ、） ２．８６
反射率 ４３Ｂａｍ ８．８％７００ｎｍ
２５． ３％
エツチングタイム
（スプレーエッチ
膜１７
１１５秒
（ジャストエッチ）
ＡＰＴ−９１４
ＴＯＰＰＡＮ−ＥＴＣＨＡＮＴ）
１０８０人
また、このブランクのエツチング後の断１面形状をＳＥ
Ｍ（走査型電子顕微鏡）により観察したところ第４図の
ように切り立った形状を呈し、反射防止膜のひさしは見
られなかった。このときのフォトマスクブランクのしゃ
光層と反射防止膜とを合わせたクロム膜の厚みは約１０
００人であり、膜の上部と下部でのサイドエッチの差は
約２００人に過ぎなかった。Optical density (0,D,) 2.86 Reflectance 43Bam 8.8%700nm
25. 3% Etching time (Spray etching film 17 115 seconds (Just etch) APT-914 TOPPAN-ETCHANT) 1080 people Also, the cross-sectional shape of this blank after etching is SE
When observed using an M (scanning electron microscope), it had a steep shape as shown in FIG. 4, and no eaves of the antireflection film were observed. At this time, the thickness of the chrome film including the light blocking layer and antireflection film of the photomask blank was approximately 10
00, and the difference in side etching between the top and bottom of the film was only about 200.
第５図はＳＥＭによるパターンの斜視写真であり、シャ
ープな形状になっているのが分かる。FIG. 5 is a perspective photograph of the pattern taken by SEM, and it can be seen that it has a sharp shape.
［発明の効果］
本発明のフォトマスクブランクおよびフォトマスクでは
、エツチング後の断面形状が従来より遥かに切り立った
形状を呈し、これにより従来より遥かに微細なパターン
が形成できる。[Effects of the Invention] In the photomask blank and photomask of the present invention, the cross-sectional shape after etching exhibits a much steeper shape than the conventional one, and as a result, a much finer pattern can be formed than the conventional one.
第１図はフォトマスクブランクの構造を示す縦断面図、
第２図はエツチング後パターンを形成した際の従来のフ
ォトマスクが呈する形状を示す縦断面図、第３図は本発
明の実施例によるフォトマスクブランクの各層中の元素
の比濃度をスパッタリング時間に対してブロタトしたオ
ージェ電子分光分析結果を示す説明図、第４図は本発明
の実施例によるフォトマスクブランクのエツチング断面
を示す縦断面図、第５図は本発明によるフォトマスクの
パターンの金属構造断面を走査電子顕微鏡にて観察した
、図面に代わる写真である。
特許出願人 凸版印刷株式会社
代 理 人 秋 元 輝 ｉｉｔ
ｉ□第１図
第２図
第４図
透明基板
第３図
スパッタリング時間（分）Figure 1 is a vertical cross-sectional view showing the structure of a photomask blank;
FIG. 2 is a vertical cross-sectional view showing the shape of a conventional photomask when a pattern is formed after etching, and FIG. 3 shows the specific concentration of elements in each layer of a photomask blank according to an embodiment of the present invention as a function of sputtering time. FIG. 4 is a vertical cross-sectional view showing an etched cross section of a photomask blank according to an embodiment of the present invention, and FIG. 5 is a diagram showing the metal structure of a photomask pattern according to the present invention. This is a photograph in place of a drawing, in which a cross section was observed using a scanning electron microscope. Patent applicant: Toppan Printing Co., Ltd. Representative: Teru Akimoto, IT
i□Figure 1 Figure 2 Figure 4 Transparent substrate Figure 3 Sputtering time (minutes)
Claims (2)
しゃ光層と、クロム、酸素、窒素、炭素、フッ素を含む
反射防止層とから構成されて成るフォトマスクブランク
であぅて、フッ素の元素濃度がしゃ光層で１〜５重量％
、反射防止層で１０〜２０重量％の範囲にあることを特
徴とするフォトマスクブランク。(1) A photomask blank consisting of a light shielding layer containing chromium, nitrogen, carbon, and fluorine and an antireflection layer containing chromium, oxygen, nitrogen, carbon, and fluorine on a transparent substrate. The element concentration is 1 to 5% by weight in the light blocking layer.
, a photomask blank characterized in that the antireflection layer is in the range of 10 to 20% by weight.
素、フッ素を含むしゃ光層と、クロ ム、酸素、窒素、炭素、フッ素を含む反射防止層とから
構成されて成るフォトマスクで あって、フッ素の元素濃度がしゃ光層で１〜５重量％、
反射防止層で１０〜２０重量％の範囲にあることを特徴
とするフォトマスク。(2) A photomask comprising a patterned light-shielding layer containing chromium, nitrogen, carbon, and fluorine on a transparent substrate, and an antireflection layer containing chromium, oxygen, nitrogen, carbon, and fluorine. , the elemental concentration of fluorine is 1 to 5% by weight in the light shielding layer,
A photomask characterized in that the antireflection layer has a content in the range of 10 to 20% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8662289A JP2785313B2 (en) | 1989-04-05 | 1989-04-05 | Photomask blank and photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8662289A JP2785313B2 (en) | 1989-04-05 | 1989-04-05 | Photomask blank and photomask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02264952A true JPH02264952A (en) | 1990-10-29 |
| JP2785313B2 JP2785313B2 (en) | 1998-08-13 |
Family
ID=13892124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8662289A Expired - Lifetime JP2785313B2 (en) | 1989-04-05 | 1989-04-05 | Photomask blank and photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2785313B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08225933A (en) * | 1995-02-21 | 1996-09-03 | Tosoh Corp | Sputtering target and its production |
| JP2008304942A (en) * | 2002-03-01 | 2008-12-18 | Hoya Corp | Method of manufacturing halftone type phase shift mask blank |
| US7611808B2 (en) | 2002-03-01 | 2009-11-03 | Hoya Corporation | Halftone type phase shift mask blank and halftone type phase shift mask |
| JP5412107B2 (en) * | 2006-02-28 | 2014-02-12 | Ｈｏｙａ株式会社 | Photomask blank manufacturing method and photomask manufacturing method |
| JP2014167650A (en) * | 2005-09-09 | 2014-09-11 | Hoya Corp | Photomask blank, photomask production method and method of producing semiconductor device |
| JP2016105158A (en) * | 2014-11-20 | 2016-06-09 | Hoya株式会社 | Photomask blank and method for manufacturing photomask using the same, and method for manufacturing display device |
| EP3667416A1 (en) * | 2018-12-12 | 2020-06-17 | Shin-Etsu Chemical Co., Ltd. | Photomask blank, and method of manufacturing photomask |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62280742A (en) * | 1986-05-29 | 1987-12-05 | Hoya Corp | Photomask blank and photomask |
| JPS6332553A (en) * | 1986-07-25 | 1988-02-12 | Hoya Corp | Photomask blank and photomask |
| JPH02130551A (en) * | 1988-11-11 | 1990-05-18 | Hitachi Ltd | Thin film pattern and production thereof as well as matrix circuit board formed by using this pattern and image display device |
-
1989
- 1989-04-05 JP JP8662289A patent/JP2785313B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62280742A (en) * | 1986-05-29 | 1987-12-05 | Hoya Corp | Photomask blank and photomask |
| JPS6332553A (en) * | 1986-07-25 | 1988-02-12 | Hoya Corp | Photomask blank and photomask |
| JPH02130551A (en) * | 1988-11-11 | 1990-05-18 | Hitachi Ltd | Thin film pattern and production thereof as well as matrix circuit board formed by using this pattern and image display device |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08225933A (en) * | 1995-02-21 | 1996-09-03 | Tosoh Corp | Sputtering target and its production |
| JP2008304942A (en) * | 2002-03-01 | 2008-12-18 | Hoya Corp | Method of manufacturing halftone type phase shift mask blank |
| US7611808B2 (en) | 2002-03-01 | 2009-11-03 | Hoya Corporation | Halftone type phase shift mask blank and halftone type phase shift mask |
| JP4614291B2 (en) * | 2002-03-01 | 2011-01-19 | Ｈｏｙａ株式会社 | Halftone phase shift mask blank and halftone phase shift mask manufactured using the same |
| JP2014167650A (en) * | 2005-09-09 | 2014-09-11 | Hoya Corp | Photomask blank, photomask production method and method of producing semiconductor device |
| JP5412107B2 (en) * | 2006-02-28 | 2014-02-12 | Ｈｏｙａ株式会社 | Photomask blank manufacturing method and photomask manufacturing method |
| JP2016105158A (en) * | 2014-11-20 | 2016-06-09 | Hoya株式会社 | Photomask blank and method for manufacturing photomask using the same, and method for manufacturing display device |
| EP3667416A1 (en) * | 2018-12-12 | 2020-06-17 | Shin-Etsu Chemical Co., Ltd. | Photomask blank, and method of manufacturing photomask |
| JP2020095133A (en) * | 2018-12-12 | 2020-06-18 | 信越化学工業株式会社 | Photomask blank, and production method of photomask |
| CN111308851A (en) * | 2018-12-12 | 2020-06-19 | 信越化学工业株式会社 | Photomask blank and method of manufacturing photomask |
| US11131920B2 (en) | 2018-12-12 | 2021-09-28 | Shin-Etsu Chemical Co., Ltd. | Photomask blank, and method of manufacturing photomask |
| TWI851497B (en) * | 2018-12-12 | 2024-08-01 | 日商信越化學工業股份有限公司 | Photomask blank substrate and photomask manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2785313B2 (en) | 1998-08-13 |
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