JPH02263385A - Semiconductor storage device - Google Patents

Abstract

PURPOSE:To facilitate switching of truth/complement between input data and output data by providing a switching circuit which selects truth or complement relations between the input and the output. CONSTITUTION:The switching circuit is provided which switches truth/ complement relations between input data and output data in accordance with bonding/non-bonding to a bonding pad 4, and truth/complement relations between input data and output data are switched by the output signal of the switching circuit in a data input buffer circuit 7 or an output buffer circuit formed on the same chip as the switching circuit. For example, a bonding switching circuit is provided with a bonding pad 4, an inverter 5, and a resistance element 6 of about 1MOMEGA. Thus, switching of truth/complement between input data and output data is facilitated and the productivity is not damaged.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a configuration method that makes it possible to switch the correction of the relationship between manual data and output data of a semiconductor memory device.

[Prior Art] FIG. 4 is a block diagram showing the output of a conventional semiconductor memory device. In the figure, (1) is a semiconductor memory device, (2
) is an input terminal, and (3) is an output terminal.

Next, the operation will be explained. The relationship between the human input data DIJ1 and the output data Q of the semiconductor memory device (1) was unique. In other words, when a logical value "1" is manually input to the semiconductor storage device (1) as the data DIN and stored, the 9 output guter Q from the semiconductor storage device (1) at the time of reading is normally the logical value. “1” is read. In response to an input of "0", "0" is output. The relationship is shown below.

[Problems to be Solved by the Invention] Conventional semiconductor memory devices have been configured as described above, but when using a semiconductor memory device, the relationship between input data and output data is not always positive. In some cases, it may be more convenient to have a complementary relationship instead of a . In such a case, the data written to the semiconductor memory device is inverted. Alternatively, it was necessary to externally attach an inverter to invert the data read from the semiconductor memory device. On the other hand, for those who manufacture semiconductor memory devices, it is possible to make two types of devices separately by, for example, changing some masks during the wafer process, but in that case, productivity will decrease. There were other problems.

The present invention has been made in order to eliminate the above-mentioned drawbacks of the conventional device, and an object of the present invention is to provide a semiconductor memory device in which the relationship between human input data and output data can be selected as either correction or correction.

[Means for Solving the Problems] A semiconductor memory device according to the present invention is provided with a switching circuit that selects whether the relationship between input and output is correct or correct, and the semiconductor memory device is equipped with a switching circuit that selects whether the relationship between input and output is correct or correct. Switch from time to time.

[Operation] The semiconductor device according to the present invention selects whether the relationship between human power and output should be corrected or corrected by a switching circuit added to the data human power buffer circuit.

[Example] Hereinafter, an example of the present invention will be described with reference to the drawings. 1st
The figure is a circuit diagram of a bonding switching circuit. In the figure, (4) is a bonding pad, (5) is an inverter, and (6) is a resistance element that is usually about IMΩ.

Next, the operation will be explained.

When nothing is wired to the bonding pad, or when a ground level potential is connected by bonding, the node A point shown in FIG. 1 is at the "Yes" level, so the signal φ is "H" and φ is "L". become the level.

On the other hand, when a current level potential is connected to the bonding pad by bonding, the node A becomes "H" level, so that the signal φ becomes "L" and the signal T becomes "H" level.

This relationship can be summarized as follows.

Further, FIG. 2 shows the output of the bonding switching circuit of FIG. 1.

FIG. 2 is a circuit diagram of a circuit in which a switching circuit for manually inputting signals φ and φ is added to a data manually operated buffer circuit. In the figure, (2) is an input terminal, (1) is a data manual buffer circuit,
(8) to (11) are n-channel MOS transistors. MOS transistors (8) to (11) are conductive when their gates are at "H" level. Therefore the signal φ
is “H” When φ is “L” MO5 transistor (8)
, (9) becomes conductive, and the MOS transistor (10)
, (11) becomes non-conductive. Therefore, the human power data DIN sent from the data human power buffer 7 circuit (7) is sent to the data human power port, and the human power data DIN is sent to the data human power port DI8.
In this case, the human power data DIN□ and drunkenness are taken into the chip in a positive relationship with the human power data DIN and Dln. On the other hand, when the signal φ is "L" and the signal φ is "H", the MOS transistors (8) and (9) are non-conductive, and the MOS transistors (10) and (11) are conductive. In this case, the human power data DIN sent from the data human power buffer circuit (7) is connected to the human power data [-, and the human power data input is connected to the input data DIN2, and in this case,
Input data DIN, input data DIN2 . DIN2 is imported. As described above, the correction relationship can be easily selected.

In the above embodiment, a switching circuit is added to the input buffer circuit, but as another embodiment of the present invention, a switching circuit may be added to the output buffer circuit. FIG. 3 shows the output of the bonding switching circuit of FIG. FIG. 2 is a circuit diagram of a circuit in which a switching circuit to which signals φ and φ are input manually is added to an output buffer circuit. In the figure, (5) is an inverter, (8) to (11) are MOS transistors, and (12) is an output buffer circuit.

[Effects of the Invention] As described above, according to the present invention, a bonding switching circuit is provided, and the output signal is used to control the data buffer circuit,
Alternatively, since the signal path of the output buffer circuit is configured to be switched, switching between manual data and output data correction is facilitated, and there is an effect that productivity is not impaired.

[Brief explanation of drawings]

FIG. 1 is a circuit diagram of a bonding switching circuit for a semiconductor memory device according to an embodiment of the present invention, and FIG. 2 is a circuit diagram of a circuit in which a switching circuit that can be switched by the output of the circuit in FIG. 1 is added to a data manual buffer circuit. 3 is a circuit diagram of a circuit in which a switching circuit that can be switched by the output of the circuit in FIG. 1 is added to an output buffer circuit showing another embodiment of the present invention, and FIG. 4 is a circuit diagram of a conventional semiconductor memory device. FIG. 3 is a block diagram showing output. In the figure, (2) is the input terminal, (4) is the bonding pad, (5) is the inverter, (6) is the resistive element, and (7)
is a data manual buffer circuit, (8) to (11) are MOS
The transistor (12) is an output buffer circuit. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

[Claims] Equipped with a dedicated bonding pad to select whether the relationship between human input data and output data is positive or complementary, and the relationship between input data and output data is corrected or compensated depending on whether or not to bond to the bonding pad. A data manual buffer circuit or an output buffer circuit, which is formed on the same chip as the switching circuit, determines the relationship between manual data and output data by using the output signal of the switching circuit. A semiconductor memory device characterized by performing switching.