JPH02263131A - Holding structure for piezoelectric element diaphragm - Google Patents
Holding structure for piezoelectric element diaphragmInfo
- Publication number
- JPH02263131A JPH02263131A JP8400289A JP8400289A JPH02263131A JP H02263131 A JPH02263131 A JP H02263131A JP 8400289 A JP8400289 A JP 8400289A JP 8400289 A JP8400289 A JP 8400289A JP H02263131 A JPH02263131 A JP H02263131A
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- substrate
- piezoelectric element
- holding structure
- external force
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000011358 absorbing material Substances 0.000 claims abstract description 7
- 238000006073 displacement reaction Methods 0.000 abstract description 14
- 238000001514 detection method Methods 0.000 abstract description 7
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は上下面に作用する圧力差によって変位する圧電
素子ダイアフラムの保持構造に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a holding structure for a piezoelectric element diaphragm that is displaced by a pressure difference acting on its upper and lower surfaces.
〈従来の技術〉
圧電素子ダイアフラムは弾性を有して薄い膜状をなし、
上下面に作用する圧力差によって変位する。従って、こ
の変位差を計測する乙とでこのダイアプラムによって仕
切られた部屋の状態などを検査することができる。<Conventional technology> A piezoelectric element diaphragm is elastic and has a thin film shape.
Displacement occurs due to the pressure difference acting on the upper and lower surfaces. Therefore, by measuring this displacement difference, it is possible to inspect the condition of a room partitioned by this diaphragm.
第４図は従来の圧電素子ダイアフラムの保持構造を示す
断面図である。第４図に示すように為圧電素子ダイアフ
ラム１０は貫通孔１１が形成された基板１２上に位置し
、その外周下面がこの基板１２に接着されて保持されて
いる。そして、この圧電素子ダイアフラム１゜にはリー
ド綿１３を介して検出器１４が接続されている。FIG. 4 is a sectional view showing a conventional piezoelectric element diaphragm holding structure. As shown in FIG. 4, the piezoelectric element diaphragm 10 is located on a substrate 12 in which a through hole 11 is formed, and its outer peripheral lower surface is adhered to and held by this substrate 12. A detector 14 is connected to this piezoelectric element diaphragm 1° via a lead cotton 13.
而して、ダイアフラム１ｏはこのダイアフラム１０によ
って仕切られたそれぞれの部屋の圧力差に応じて変位し
、検出器１４にその電圧信号を送信する。Thus, the diaphragm 1o is displaced according to the pressure difference between the respective rooms partitioned by the diaphragm 10, and transmits the voltage signal to the detector 14.
〈発明が解決しようとする課題〉
このような従来の圧電素子ダイアフラムの保持構造にあ
っては、ダイアフラム１ｏが基板１１に直接固定されて
いるため、熱膨張などによって基板１１が変形すると、
そのときに発生する力が直接ダイアフラム１ｏに作用し
てダイアフラム１ｏがより以上に変位してしまって検出
誤差を生じ、ダイアフラム１０による正確な変位の検出
ができなくなってしまうという問題点があった。<Problems to be Solved by the Invention> In such a conventional piezoelectric element diaphragm holding structure, since the diaphragm 1o is directly fixed to the substrate 11, when the substrate 11 is deformed due to thermal expansion, etc.
There is a problem in that the force generated at that time acts directly on the diaphragm 1o, causing the diaphragm 1o to displace more, causing a detection error, and making it impossible to accurately detect displacement by the diaphragm 10.
そのため、ダイアフラム１０の圧力差による変位をより
明確にするためにその変位量を大きくすることが考えら
れる。ところが、ダイアフラム１０は上下面に作用する
圧力差によってダイアフラム１０自体が変位し、その変
位量を検出しているため、その変位量は入力（圧力）値
で決定され、検出限界差圧はダイアフラム１０自体の大
きさによって決定される。従って、この変位量を大きく
するにはダイアフラム１０自体の大きさを大きくしなけ
ればならず、これによって装置が大型化しダイアフラム
１０の取付位置が拘束されてしまう。Therefore, in order to make the displacement of the diaphragm 10 due to the pressure difference more clear, it is conceivable to increase the amount of displacement. However, the diaphragm 10 itself is displaced due to the pressure difference acting on the upper and lower surfaces, and the amount of displacement is detected, so the amount of displacement is determined by the input (pressure) value, and the detection limit differential pressure is determined by the pressure difference acting on the diaphragm 10. determined by its own size. Therefore, in order to increase this amount of displacement, it is necessary to increase the size of the diaphragm 10 itself, which increases the size of the device and restricts the mounting position of the diaphragm 10.
本発明は乙のような問題点を解決するものであって、基
板の変形による検出誤差をなくすと共にダイアフラムの
感度の向上を図った圧電素子ダイアプラムの保持構造を
提供する乙とを目的とする。The present invention is intended to solve the problem described in item (B), and aims to provide a holding structure for a piezoelectric diaphragm that eliminates detection errors due to deformation of the substrate and improves the sensitivity of the diaphragm.
く課題を解決するための手段〉
上述の目的を達成するための本発明の圧電素子ダイアフ
ラムの保持構造は、上下面に作用する圧力差によって変
位する圧電素子ダイアフラムを該圧電素子ダイアフラム
に圧縮を作用された状態で外力吸収材を介して基板に固
定したことを特徴とするものである。Means for Solving the Problems> To achieve the above object, the piezoelectric diaphragm holding structure of the present invention compresses the piezoelectric diaphragm, which is displaced by a pressure difference acting on the upper and lower surfaces. The device is characterized in that it is fixed to the substrate via an external force absorbing material in the state of being fixed.
く作 用〉
基板の変形によってダイアフラムに作用する力は外力吸
収材によって吸収される一方、圧力差によって変位する
ダイアフラムの変位量は圧縮力により増幅されその絶対
値が大きくなる。Effect> The force acting on the diaphragm due to the deformation of the substrate is absorbed by the external force absorbing material, while the amount of displacement of the diaphragm due to the pressure difference is amplified by the compressive force and its absolute value increases.
く実 施 例〉
以下、図面に基づいて本発明の実施例を詳細に説明する
。Embodiments Hereinafter, embodiments of the present invention will be described in detail based on the drawings.
第１図は本発明の一実施例に係る圧電素子ダイアフラム
の保持構造を示す断面図、第２図及び第３図はダイアフ
ラムの変位量を表すグラフである。なお、従来と同一部
材には同一の符号を付して重複する説明は省略する。FIG. 1 is a sectional view showing a piezoelectric element diaphragm holding structure according to an embodiment of the present invention, and FIGS. 2 and 3 are graphs showing the amount of displacement of the diaphragm. In addition, the same reference numerals are given to the same members as in the conventional art, and redundant explanations will be omitted.
本実施例においては、本発明の圧電素子ダイアフラムの
保持構造を自動車用エンジンのエアフローセンサに用い
た場合について説明する。In this embodiment, a case will be described in which the piezoelectric element diaphragm holding structure of the present invention is used in an air flow sensor for an automobile engine.
エアフローセンサはエンジンの吸気管の大気開口端部に
取付けられ、エンジンに吸入される空気流量を検出する
ものである。An air flow sensor is attached to the atmosphere-opening end of an engine's intake pipe and detects the flow rate of air taken into the engine.
第１図に示すように、エンジンの吸気通路２１の途中に
はバイパス通路２２が設けられており、乙のバイパス通
路２２にはこれを閉塞するように貫通孔１１が形成され
た基板１２が取付けられている。そして、この基板１２
上には圧電素子ダイアフラム１０が同じく貫通孔２３が
形成された外力吸収部材２４は熱膨張などによる基板１
２の変形が原因で作用する力を吸収してダイアフラム１
０に伝わらないようにするためのものであって、シリコ
ン材料などによって製造される。As shown in FIG. 1, a bypass passage 22 is provided in the middle of the intake passage 21 of the engine, and a substrate 12 in which a through hole 11 is formed is attached to the bypass passage 22 so as to close the bypass passage 22. It is being And this board 12
The piezoelectric element diaphragm 10 is disposed on top of the external force absorbing member 24, which also has a through hole 23 formed therein.
The diaphragm 1 absorbs the force acting due to the deformation of the diaphragm 1.
This is to prevent the signal from becoming zero, and is made of silicon material or the like.
また、外力吸収部材２４は加熱などにより膨張した状態
で基板１２に接着されると共にこの外力吸収部材２４に
ダイアフラム１０を接着し、その後、乾燥させて外力吸
収部材２４を収縮状態とし、ダイアフラム１０に常時圧
縮応力が作用するようにしである。Further, the external force absorbing member 24 is bonded to the substrate 12 in an expanded state due to heating or the like, and the diaphragm 10 is bonded to the external force absorbing member 24, and then dried to bring the external force absorbing member 24 into a contracted state. Compressive stress is applied at all times.
このように保持された圧電素子ダイアフラム１０におい
て、基板１２の熱変形による力が発生した場合、その力
は外力吸収部材２４によって吸収、遮断されてダイアフ
ラム１０に悪影響を与えることはない。In the piezoelectric element diaphragm 10 held in this way, if a force is generated due to thermal deformation of the substrate 12, the force is absorbed and blocked by the external force absorbing member 24 and does not adversely affect the diaphragm 10.
また、ダイアフラム１０には、常時、圧縮応力が作用し
ているので、その感度が向上し圧力信号を電圧信号に変
換する能力が向上する。即ち、第２図に示すように、同
図に点線で示す従来の圧電素子ダイアプラムの保持構造
によるダイアフラム１０の変位量に対して、同図に実線
で示す本発明の圧電素子ダイアフラムの保持構造による
ダイアフラム１０の変位量の方が大きくその絶対値はａ
（ｂとなり、ダイアフラム１０の感度が向上する。更
に、第３図に示すように、検出限界差圧の最小値も同図
に点線で示す従来のものに比べて同図に実線で示す本発
明の圧電素子ダイアフラムの保持構造によるもののほう
が小さくなっている。Furthermore, since compressive stress is always acting on the diaphragm 10, its sensitivity is improved and the ability to convert pressure signals into voltage signals is improved. That is, as shown in FIG. 2, the amount of displacement of the diaphragm 10 due to the conventional piezoelectric diaphragm holding structure shown by the dotted line in the same figure is compared to that due to the holding structure of the piezoelectric diaphragm of the present invention shown by the solid line in the same figure. The amount of displacement of the diaphragm 10 is larger and its absolute value is a
(b), and the sensitivity of the diaphragm 10 is improved.Furthermore, as shown in FIG. 3, the minimum value of the detection limit differential pressure is also higher in the present invention, indicated by a solid line in the figure, compared to the conventional one, indicated by a dotted line in the same figure. The one based on the holding structure of the piezoelectric element diaphragm is smaller.
なお、上述の実施例においては本発明の圧電素子ダイア
フラムの保持構造を自動車用エンジンのエアフローセン
サに用いた場合について説明したが、本発明の圧電素子
ダイアフラムの保持構造の用途はこれに限定されるもの
ではない。In addition, in the above-mentioned embodiment, the case where the piezoelectric element diaphragm holding structure of the present invention is used in an air flow sensor of an automobile engine has been described, but the application of the piezoelectric element diaphragm holding structure of the present invention is limited to this. It's not a thing.
〈発明の効果〉
以上、実施例を挙げて詳細に説明したように本発明の圧
電素子ダイアフラムの保持構造によれば、圧電素子ダイ
アフラムをそのダイアフラムに圧縮力を作用させた状態
で外力吸収材を介して基板に固定したので、基板の変形
による検出誤差をなくすことができると共にダイアフラ
ムの感度の向上を図ることができる。<Effects of the Invention> As described above in detail with reference to the embodiments, according to the piezoelectric element diaphragm holding structure of the present invention, the external force absorbing material is applied to the piezoelectric element diaphragm while a compressive force is applied to the diaphragm. Since the diaphragm is fixed to the substrate through the diaphragm, detection errors due to deformation of the substrate can be eliminated, and the sensitivity of the diaphragm can be improved.
第１図は本発明の一実施例に係る圧電素子ダイアフラム
の保持構造を示す断面図、第２図及び第３図はダイアフ
ラムの変位量を表すグラフ、第４図は従来の圧電素子ダ
イアプラムの保持構造を示す断面図である。
図 面 中、
１０は圧電素子ダイアフラム、
１２は基板、
２４は外力吸収部材である。FIG. 1 is a cross-sectional view showing a piezoelectric diaphragm holding structure according to an embodiment of the present invention, FIGS. 2 and 3 are graphs showing the amount of displacement of the diaphragm, and FIG. 4 is a conventional piezoelectric diaphragm holding structure. FIG. 3 is a cross-sectional view showing the structure. In the drawing, 10 is a piezoelectric element diaphragm, 12 is a substrate, and 24 is an external force absorbing member.
Claims (1)
アフラムを該圧電素子ダイアフラムに圧縮力を作用させ
た状態で外力吸収材を介して基板に固定したことを特徴
とする圧電素子ダイアフラムの保持構造。A holding structure for a piezoelectric element diaphragm, characterized in that a piezoelectric element diaphragm that is displaced by a pressure difference acting on its upper and lower surfaces is fixed to a substrate via an external force absorbing material while a compressive force is applied to the piezoelectric element diaphragm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8400289A JPH0789092B2 (en) | 1989-04-04 | 1989-04-04 | Piezoelectric diaphragm holding structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8400289A JPH0789092B2 (en) | 1989-04-04 | 1989-04-04 | Piezoelectric diaphragm holding structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02263131A true JPH02263131A (en) | 1990-10-25 |
| JPH0789092B2 JPH0789092B2 (en) | 1995-09-27 |
Family
ID=13818352
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8400289A Expired - Fee Related JPH0789092B2 (en) | 1989-04-04 | 1989-04-04 | Piezoelectric diaphragm holding structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0789092B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010139285A (en) * | 2008-12-09 | 2010-06-24 | Yazaki Corp | Determination device and pressure signal output device |
-
1989
- 1989-04-04 JP JP8400289A patent/JPH0789092B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010139285A (en) * | 2008-12-09 | 2010-06-24 | Yazaki Corp | Determination device and pressure signal output device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0789092B2 (en) | 1995-09-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5108783B2 (en) | Micromachining sensor element | |
| US7508040B2 (en) | Micro electrical mechanical systems pressure sensor | |
| US4942383A (en) | Low cost wet-to-wet pressure sensor package | |
| US7183620B2 (en) | Moisture resistant differential pressure sensors | |
| JPS60195830A (en) | Electrostatic capacity type pressure detector | |
| JPS61500633A (en) | pressure transducer | |
| JPH07103837A (en) | Sensor for detecting physical amount | |
| US7506548B2 (en) | Pressure sensor package structure | |
| JPH02263131A (en) | Holding structure for piezoelectric element diaphragm | |
| JPH02138776A (en) | Semiconductor pressure sensor | |
| CN207763855U (en) | Pressure sense die and pressure sensor | |
| JPS59155734A (en) | Force converter | |
| JPS63139688A (en) | Suction detector | |
| JPS60209133A (en) | Pressure transducer | |
| JPH0519797Y2 (en) | ||
| JP2513235B2 (en) | Clogging detection device for air cleaner for internal combustion engine | |
| JP2654184B2 (en) | Semiconductor humidity sensor | |
| JPS585951Y2 (en) | Handout Taiatsuriyokukenchisouchi | |
| US6526832B2 (en) | Disk-shaped silicon sensor element for a pressure sensor and pressure sensor using such a silicon sensor element | |
| JPH04267566A (en) | Semiconductor pressure sensor for high pressure | |
| JPS6333150Y2 (en) | ||
| JPH01348A (en) | Air cleaner clogging detection device for internal combustion engines | |
| JPS61202152A (en) | Moisture detector | |
| JPS6079242A (en) | Pressure converter | |
| JPS61132832A (en) | Semiconductor pressure sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |