JPH02262950A - Polishing method for ceramics - Google Patents

Polishing method for ceramics

Info

Publication number
JPH02262950A
JPH02262950A JP1078642A JP7864289A JPH02262950A JP H02262950 A JPH02262950 A JP H02262950A JP 1078642 A JP1078642 A JP 1078642A JP 7864289 A JP7864289 A JP 7864289A JP H02262950 A JPH02262950 A JP H02262950A
Authority
JP
Japan
Prior art keywords
polishing
ceramic
grindstone
processed
ceramics
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1078642A
Other languages
Japanese (ja)
Inventor
Takeshi Shioda
塩田 武
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP1078642A priority Critical patent/JPH02262950A/en
Publication of JPH02262950A publication Critical patent/JPH02262950A/en
Pending legal-status Critical Current

Links

Landscapes

  • Grinding Of Cylindrical And Plane Surfaces (AREA)

Abstract

PURPOSE:To equalize the polishing efficiency of a soft pressing frame with the polishing efficiency of a hard ceramics so as to suppress face flagging by arranging, in close contact, a pressing frame, which has the same height as the ceramics substance to be processed and consists of metallic material not subjected to the chemical action of a grindstone, at the peripheral side face of the ceramic substance to be processed so as to polish it. CONSTITUTION:A pressing frame 6, which has the same height as the ceramic substance 5 to be processed and consists of metallic material not subjected to the chemical action of a grindstone 3, is arranged, in close contact, at the peripheral side face of the ceramic substance 5 to be processed so as to polish this substance 5 to be processed with the grindstone 3. As a result, the polishing efficiency of a soft pressing frame 6 and the polishing efficiency of a hard ceramics 5 become almost equal, which decreases such troubles as that the ground powder bites in the marginal part of the ceramics 5 as the substance to be processed and causes face flagging. Accordingly, ceramic parts excellent all in dimension accuracy, shape accuracy, and plane accuracy can be obtained.

Description

【発明の詳細な説明】 〔発明の目的〕 (産業上の利用分野) 本発明はビラミックス部品の表面を精密研磨仕上げする
ようにしたセラミックスの研磨方法に係り、特にセラミ
ックス部品端縁部の面だれを防止し、安価で平面精度が
高いセラミックス部品を提供し得るセラミックスのωl
磨方法に関する。
[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention relates to a ceramic polishing method for precision polishing the surface of a Viramix component, and in particular, to a ceramic polishing method for precision polishing the surface of a ceramic component. ωl of ceramics that can prevent drooping and provide ceramic parts with low cost and high flatness accuracy.
Regarding polishing methods.

(従来の技術) 金属や樹脂を中心とする従来材料と比較して耐熱性や耐
食性および機械的特性に優れたヒラミックスが、自動車
、医療産業上の利用分野で使用されている。このセラミ
ックスなどの硬脆材の表面を精密研磨仕上げする方法と
して、従来からラッピングやポリッシングによる方法が
知られている。ラッピングまたはポリッシングは、被研
磨材を鋳鉄等から成るラップや織布等のポリシャに適当
な圧力で押し付け、酸化アルミニウム(A1203)、
炭化珪素<s r C) 、酸化セリウム(CeO2)
、ベンガラ(Fe203)等の微細砥粒にラップ液を混
合して調製し、このラップ液を被(111磨材とポリシ
ャとの間に介在させた後に、被研磨材とポリシャとを相
対的に移動さVることにより、砥粒によって被研磨材の
表面を鏡面仕上げする方法である。このラッピングまた
はボリッシングは、研削等により精密仕上げされた被研
磨材の表面をさらに平滑にして寸法精度および平面精度
を向上させるものである。
(Prior Art) Hiramix, which has superior heat resistance, corrosion resistance, and mechanical properties compared to conventional materials mainly made of metals and resins, is used in the automotive and medical industries. As a method for precisely polishing the surface of hard brittle materials such as ceramics, methods using lapping and polishing have been known. In lapping or polishing, the material to be polished is pressed with appropriate pressure against a wrap made of cast iron or a polisher made of woven cloth.
Silicon carbide<s r C), cerium oxide (CeO2)
A lapping liquid is prepared by mixing fine abrasive grains such as iron oxide (Fe203), etc., and this lapping liquid is interposed between the polished material (111) and the polisher, and then the polished material and the polisher are relatively This is a method of mirror-finishing the surface of the material to be polished using abrasive grains by moving the material to a mirror finish.This lapping or boring process further smoothes the surface of the material to be polished, which has been precisely finished by grinding, etc., to improve dimensional accuracy and flatness. This improves accuracy.

しかし上記のラッピングやポリッシングによる研磨方法
では仕事量に比較して加lff1が少ないので研磨効率
が低いという欠点がある。また近年、部品の高精度化に
対する要請が高まり、より平面精度が優れたセラミック
ス部品が求められている。
However, the above-mentioned polishing methods using lapping and polishing have the drawback that the polishing efficiency is low because the addition lff1 is small compared to the amount of work. In addition, in recent years, there has been an increasing demand for higher precision parts, and ceramic parts with even better planar precision are being sought.

例えば計測機器の基準面となるセラミックス部品や寸法
測定用のゲージブロックとして使用するヒラミックス部
品は寸法精度、形状精度、平面¥1度がいずれも高いも
のが要求される。
For example, ceramic parts that serve as reference surfaces for measuring instruments and Hiramix parts that are used as gauge blocks for dimension measurement are required to have high dimensional accuracy, shape accuracy, and flatness of 1 degree.

そのため、セラミックス部品の表面をより高精度かつ高
い効率で研磨する一方法として、従来のメカニカルな研
磨方法に加えて、研磨表面における化学反応をも利用し
て研磨作業を行なう、いわゆるメカノケミカルな研磨方
法も採用されている。
Therefore, in addition to the conventional mechanical polishing method, so-called mechanochemical polishing, which uses chemical reactions on the polished surface, is a method for polishing the surfaces of ceramic parts with higher precision and efficiency. method has also been adopted.

このメカノケミカル研磨法は、被研磨材と化学反応を起
こす砥粒または砥石を使用し、被研磨材表面の突出した
微細領域において化学反応を生起Vしめ、生成した反応
生成物を砥粒によってメカニカルに除去し、平面精度を
向上さぼる方法である。
This mechanochemical polishing method uses abrasive grains or whetstones that cause a chemical reaction with the material to be polished.The chemical reaction is caused in minute regions that protrude on the surface of the material to be polished, and the generated reaction products are mechanically polished using the abrasive grains. This is a method to improve flatness accuracy.

そして実際に研磨作業を行なう場合には被研磨材の端縁
部における面だれを防止するために、予め被r1Fl磨
材の外周側面に被研磨材と同一厚さで、かつ同一材料で
調製した抑え枠を密着させて装着し、被?dl磨材と抑
え枠とを同時に研磨する。
When actually polishing work is carried out, in order to prevent the surface from sagging at the edge of the material to be polished, the outer circumferential surface of the material to be polished is prepared in advance with the same thickness and the same material as the material to be polished. Attach the holding frame tightly and cover it. Polish the dl polishing material and the holding frame at the same time.

上記のメカノケミカルな研磨方法によれば、被研磨材お
よび抑え枠は同一材料で形成されているため、同一の研
磨能率でr!I磨される。このとき両部材の境界部にお
ける砥粒のかじりが発生しないため、面だれの発生は効
果的に防止される。また被rIII磨材表面の微細な突
起部はケミカル作用を受けてより平滑に仕上げられるた
め、従来法と比較して寸法精度、形状精度がより優れた
セラミックス部品を得ることが可能である。また従来の
メカニカルな研磨方法と異なり、ケミカル作用による精
密な研磨方法を併用しているため、平面精度が大幅に改
良される上に、研磨効率が著しく向上し、研磨作業時間
を短縮することができる。
According to the above mechanochemical polishing method, since the material to be polished and the holding frame are made of the same material, the polishing efficiency is the same. I will be polished. At this time, galling of the abrasive grains at the boundary between the two members does not occur, so that the occurrence of surface sagging is effectively prevented. In addition, since the fine protrusions on the surface of the rIII polished material are chemically treated and finished more smoothly, it is possible to obtain ceramic parts with better dimensional accuracy and shape accuracy than with conventional methods. In addition, unlike conventional mechanical polishing methods, we also use a precise polishing method using chemical action, which not only greatly improves flatness accuracy but also significantly improves polishing efficiency and shortens polishing time. can.

(発明が解決しようとする課題) しかしながら、従来の研磨方法によると、被研磨材端縁
における面だれの発生を防止するために被ωlW!材と
同一材料で調製した抑え枠を配設する必要があり、その
抑え枠の調製に多大な費用を要する欠点がある。
(Problem to be Solved by the Invention) However, according to the conventional polishing method, in order to prevent the occurrence of surface sagging at the edge of the material to be polished, ωlW! It is necessary to provide a restraining frame made of the same material as the material, which has the disadvantage of requiring a large amount of cost to prepare the restraining frame.

ずなわち被研磨材の端縁部の仕上げ精度を良好にするた
めには、被研磨材および抑え枠の研磨能率を等しく設定
する必要があり、両者を同一材料で調製する必要があっ
た。しかし、そのためには被研磨材の5〜6倍量の抑え
枠を同一条件で調製する必要があり、特にセラミックス
材は硬く加工が困難、な場合が多く、抑え枠の製作費が
膨大になる。
In other words, in order to improve the finishing accuracy of the edge portion of the material to be polished, it is necessary to set the polishing efficiency of the material to be polished and the holding frame to be equal, and it is necessary to prepare both from the same material. However, in order to do this, it is necessary to prepare a holding frame 5 to 6 times the amount of the material to be polished under the same conditions, and ceramic materials are often hard and difficult to process, which increases the cost of manufacturing the holding frame. .

一方、−度抑え枠として研磨作業に使用したものは寸法
が変化し再度の使用は不可能となり、抑え枠はその都度
廃棄されていたため、原材料に対するセラミックス製品
の歩留りが極めて低く不軽済であるという問題点があっ
た。
On the other hand, the dimensions of the frame used for polishing as a holding frame changed and it became impossible to use it again, and the holding frame was discarded each time, so the yield of ceramic products based on raw materials was extremely low and was not worth the cost. There was a problem.

本発明は上記の問題点を解決するためになされたもので
あり、安画な抑え枠を使用し、被研磨材端縁の而だれの
発生を防止でき、平面精度の高いセラミックス部品が効
率良く得られるセラミックスの研磨方法を提供すること
を目的とする。
The present invention was made to solve the above-mentioned problems, and by using a cheap holding frame, it is possible to prevent the occurrence of sag on the edge of the material to be polished, and to efficiently produce ceramic parts with high flatness precision. The object of the present invention is to provide a method for polishing the resulting ceramics.

〔発明の構成〕[Structure of the invention]

(課題を解決するための手段) 本発明は、セラミックス被加工物の表面を、Cラミック
ス被加工物に対しケミカル作用を有する砥石によりメカ
ノケミカル研磨するセラミックスの研磨方法において、
ヒラミックス被加工物の外周側面に、セラミックス被加
工物と等しい高さを有し砥石のケミカル作用を受けない
金属材料からなる抑え枠を密着配設して研磨することを
特徴とする。
(Means for Solving the Problems) The present invention provides a method for polishing ceramics in which the surface of a ceramic workpiece is mechanochemically polished using a grindstone that has a chemical effect on the C ceramic workpiece.
It is characterized in that a holding frame made of a metal material, which has the same height as the ceramic workpiece and is not affected by the chemical action of the grindstone, is closely disposed on the outer circumferential side of the Hiramix workpiece for polishing.

(作用) 上記構成に係るセラミックスの研磨方法によれば、ケミ
カル作用を受けない金属材料で形成された抑え枠を使用
しているため、抑え枠は砥石によるメカニカルな研磨作
用のみを受ける。一方、被加工物としてのセラミックス
は、砥石によるメカニカルな研磨作用に加えて、砥石の
成分と部分的に反応しケミカルな研磨作用をも受ける。
(Function) According to the method for polishing ceramics having the above configuration, since the holding frame is made of a metal material that is not subjected to chemical action, the holding frame is subjected only to the mechanical polishing action of the grindstone. On the other hand, ceramics as a workpiece are subjected to not only the mechanical polishing action of the grindstone, but also the chemical polishing action that partially reacts with the components of the grindstone.

そのため軟質な抑え枠の研磨能率と硬質なセラミックス
のFiirIi能率とがほぼ等しくなり、抑え枠とセラ
ミックスとの境界部は等しく研磨される。
Therefore, the polishing efficiency of the soft holding frame and the FiirIi efficiency of the hard ceramic are approximately equal, and the boundary between the holding frame and the ceramic is equally polished.

そのため被加工物としてのセラミックスの端縁部に砥粒
が噛み込んで面だれを発生することは少ない。したがっ
て寸法精成、形状精疾、平面精度がともに優れたセラミ
ックス部品を提供することができる。
Therefore, abrasive grains are less likely to get caught in the edge of the ceramic workpiece, causing surface sagging. Therefore, it is possible to provide ceramic parts with excellent dimensional precision, shape precision, and planar precision.

特に抑え枠として、被加工物と同等のセラミックス材を
使用せず、安価な汎用の金属材料を使用しているため、
抑え枠の製造コストおよび製造時間が大幅に低減される
。また、抑え枠をwA!FiJするためにセラミックス
原料を使用することがないため、原材料に対するセラミ
ックス部品の歩留りを大幅に改善できるという優れた効
宋を発揮する。
In particular, as the holding frame does not use a ceramic material equivalent to the workpiece, it uses an inexpensive general-purpose metal material.
The manufacturing cost and manufacturing time of the restraining frame are significantly reduced. Also, the restraint frame wA! Since ceramic raw materials are not used for FiJ, the yield of ceramic parts compared to raw materials can be greatly improved, which is an excellent effect.

(実施例) 次に本発明の一実施例について添付図面を参照して説明
する。第1図は本発明方法を実施するための1ilI磨
装置の一実施例を示す断面図である。
(Example) Next, an example of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a sectional view showing an embodiment of an IIL polishing apparatus for carrying out the method of the present invention.

研磨装置は、回転軸1に一体的に固着され、水平面上を
回転する回転台2と、回転台2の上面に固着された円盤
状の砥石3と、被加工物5としてのセラミックス(Si
3N4)および抑え枠6を一体的に貼り付ける円盤状の
貼り板4と、貼り板4を回転自在に保持する回転ローラ
7a、7bと、回転ロー57a、7bを保持するフレー
ム8と、フレーム8上に装備され、回転ローラ7aを駆
動させるU転駆i11装置9と、貼り板4を砥石3方向
に押圧する加圧装置10とを備える。
The polishing device includes a rotary table 2 which is integrally fixed to a rotating shaft 1 and rotates on a horizontal plane, a disc-shaped grindstone 3 fixed to the upper surface of the rotary table 2, and a ceramic (Si) workpiece 5.
3N4) and a disc-shaped sticking plate 4 to which the holding frame 6 is attached integrally, rotating rollers 7a and 7b that rotatably hold the sticking plate 4, a frame 8 that holds the rotating rows 57a and 7b, and a frame 8. It is equipped with a U rotation drive i11 device 9 that is installed on the top and drives the rotating roller 7a, and a pressure device 10 that presses the sticking plate 4 in the direction of the grindstone 3.

また図示は省略するが、砥石30半径方向にフレーム8
を往#a動させる往復駆動装置が設置Jられており、貼
り板4に貼着された被加工物5は砥石表面上を回転する
と同時に磁石30半径方向にも往復肋するように構成さ
れている。
Although not shown, the frame 8 is located in the radial direction of the grindstone 30.
A reciprocating drive device is installed to move the grinding wheel back and forth, and the workpiece 5 attached to the sticking plate 4 is configured to rotate on the surface of the grinding wheel and at the same time reciprocate in the radial direction of the magnet 30. There is.

被加工物5の(iIl磨作業を行なう場合には、まず第
3図(a)、(b)に示すように貼り板4の上面に被加
工物5を貼着し、さらにその外周側面に被加工物5と同
一高さを有する4個の抑え枠要素6a、6b、6c、6
dを相互に密着するように配設し、接着剤等で固定する
。なお抑え枠要素6a〜6dの数は被加工物5の形状に
応じて増減される。
When polishing the workpiece 5, first attach the workpiece 5 to the top surface of the affixing plate 4 as shown in FIGS. 3(a) and (b), and then Four restraining frame elements 6a, 6b, 6c, 6 having the same height as the workpiece 5
d so that they are in close contact with each other and fixed with adhesive or the like. Note that the number of holding frame elements 6a to 6d is increased or decreased depending on the shape of the workpiece 5.

また抑え枠要素6a〜6dは、砥石3によるケミカル作
用を受けない鏝料、例えば一般MIj造用鋼(88,8
841) 、ステンレス鋼(SUS304)、機械構造
用鋼(845C)など、加工が容易で安価な汎用金属材
料で形成される。
Further, the holding frame elements 6a to 6d are made of a trowel that is not subjected to chemical action by the grinding wheel 3, such as general MIJ steel (88, 8
841), stainless steel (SUS304), mechanical structural steel (845C), etc., are made of general-purpose metal materials that are easy to process and inexpensive.

また砥石としてはSi3N4などのセラミックス成分と
化学反応を起こす酸化クロム(Cr203)粉末を樹脂
材料で固型化した樹脂ボンド砥石などが採用される。
Further, as the grindstone, a resin bonded grindstone is used, which is made by solidifying chromium oxide (Cr203) powder with a resin material, which causes a chemical reaction with a ceramic component such as Si3N4.

第3図(a)、(b)に示すように貼り板4上面に一体
的に貼着された被加工物5および抑え枠6は、第1図に
示すように研磨装置の砥石3の上面に被加工物5の被研
磨面が当接するように載置され、回転ローラ7a、7b
によって拘束される。
As shown in FIGS. 3(a) and 3(b), the workpiece 5 and holding frame 6, which are integrally attached to the upper surface of the affixing plate 4, are attached to the upper surface of the grinding wheel 3 of the polishing device as shown in FIG. The surface of the workpiece 5 to be polished is placed in contact with the rotating rollers 7a and 7b.
be bound by.

被加工物5は加圧装置10によって所定圧力で砥石3上
面に押圧される。
The workpiece 5 is pressed against the upper surface of the grindstone 3 with a predetermined pressure by a pressure device 10.

この状態で回転台2が回転し、同時に回転駆動装置9が
起動することにより、被加工物5は、駆動側の回転ロー
ラ7aによって回転される。一方図示しない往復駆動装
置によって被加工物5は、砥石3の半径方向にも同時に
往m肋する。このように砥石3の研磨面に対して被加工
物5は縦横に位置を変えながら研磨されるため、被加工
物5は全面にわたり一様な研磨能率で均一に研磨される
In this state, the rotary table 2 rotates and the rotary drive device 9 is started at the same time, so that the workpiece 5 is rotated by the drive-side rotary roller 7a. On the other hand, the workpiece 5 is simultaneously reciprocated in the radial direction of the grindstone 3 by a reciprocating drive device (not shown). In this way, the workpiece 5 is polished while changing its position vertically and horizontally with respect to the polishing surface of the grindstone 3, so that the workpiece 5 is polished uniformly over the entire surface with uniform polishing efficiency.

この研磨作業によって、砥石(Cr203)とセラミッ
クス(Si3N4)の微細突起部とが部分的に化学反応
を起こし、剥離し易い反応生成物が形成される。この反
応生成物は砥粒と衝突することによってメカニカルに排
除される。こうしてセラミックスはケミカル作用を利用
した研磨と、メカニカルな研磨とを併用したメカノケミ
カル研磨によって効率的に鏡面加工される。
This polishing operation causes a partial chemical reaction between the grindstone (Cr203) and the fine protrusions of the ceramic (Si3N4), and a reaction product that is easily peeled off is formed. This reaction product is mechanically removed by colliding with the abrasive grains. In this way, ceramics are efficiently mirror-finished by mechanochemical polishing, which combines polishing using chemical action and mechanical polishing.

一方、軟質な一般構造用tj4(8841)等で形成さ
れた抑え枠6は砥粒によるケミカル作用を受けずに砥石
によるメカニカルな研磨作用のみを受ける。そのためセ
ラミックス部品と抑え枠6は番よぼ同等のr111w!
i効率で研磨される。したがってセラミックス部品と抑
え枠6との境界部に段差を生じることがなく、セラミッ
クス部品の端縁部に砥粒が噛み込lυで面だれを発生す
ることがない。ゆえに寸法精度、形状精度、平面精度が
ともに優れたセラミックス部品を効率的に提供すること
ができる。
On the other hand, the restraining frame 6 made of soft general structure tj4 (8841) or the like is not subjected to the chemical action of abrasive grains, but only to the mechanical polishing action of a grindstone. Therefore, the ceramic parts and holding frame 6 are roughly equivalent to R111W!
Polished with i efficiency. Therefore, no step is formed at the boundary between the ceramic component and the holding frame 6, and abrasive grains do not get caught in the edge of the ceramic component and cause surface sagging. Therefore, it is possible to efficiently provide ceramic parts with excellent dimensional accuracy, shape accuracy, and planar accuracy.

特に抑え枠6として安価で加工が容易な汎用の金属材料
(SS41)を使用しているため、抑え枠6の製造が容
易であり、その製造コストおよび製造時間が大幅に低減
される。また抑え枠6を調製するために高価なヒラミッ
クス原料を使用することがないため、原材料に対するセ
ラミックス部品の歩留りを、従来の5〜6倍に改善する
ことが可能であり、経浩性を大幅に高めることができる
In particular, since the holding frame 6 is made of a general-purpose metal material (SS41) that is inexpensive and easy to process, the holding frame 6 is easy to manufacture, and its manufacturing cost and manufacturing time are significantly reduced. In addition, since expensive Hiramix raw materials are not used to prepare the holding frame 6, it is possible to improve the yield of ceramic parts based on raw materials by 5 to 6 times compared to conventional methods, and the bulkiness can be greatly improved. can be increased to

次により具体的な実施例を説明する。Next, a more specific example will be described.

ケミカル作用を有する砥粒として酸化クロム(Cr20
3)微粒子と、樹脂粉末とを均一に混合して、圧縮成型
した樹脂ボンド砥石を研磨装置に装着する一方、縦15
+u+1横30HIi、高さ10Mであり、中心線平均
粗さを0.5μmRaに予備研磨したSi3N4部品を
直径100J11の貼り板上に貼着し、さらにその周囲
に厚さ10#lINの一般構造用鋼(SS41)で調製
した抑え枠を密着するように貼着し、研磨したところ、
研磨速度10μ71L/Ilr、仕上げ面の粗さは0.
03μmrLRaであり、面だれはほとんど観察されな
かった。
Chromium oxide (Cr20) is used as an abrasive grain with chemical action.
3) A resin-bonded grindstone made by uniformly mixing fine particles and resin powder and compression-molding is mounted on the polishing device, while
A Si3N4 component with +u+1 width of 30HIi and height of 10M and pre-polished to a center line average roughness of 0.5μmRa is pasted on a 100J11 diameter plate, and around it is a general structural part with a thickness of 10#lIN. When a holding frame made of steel (SS41) was attached tightly and polished,
Polishing speed: 10μ71L/Ilr, finished surface roughness: 0.
03 μmrLRa, and almost no surface sagging was observed.

一方比較例として、上記実施例で使用したものと同一の
Si3N4部品および砥石を用意し、抑え枠をSi3N
4で形成したものについて同一条件で研磨したところ、
研磨速度9μm/Ilr、仕上げ面の粗さは0.03μ
mRaであり、面だれも観察されず、実施例および比較
例の双方ともほぼ同一の結果を得た。
On the other hand, as a comparative example, the same Si3N4 parts and grindstone as those used in the above example were prepared, and the holding frame was made of Si3N4.
When the material formed in step 4 was polished under the same conditions,
Polishing speed 9μm/Ilr, finished surface roughness 0.03μ
mRa, no surface sagging was observed, and almost the same results were obtained in both the Examples and Comparative Examples.

しかし本実施例方法によれば、セラミックス(S13N
4)製の抑え枠を調製する必要がないため、抑え枠の製
造コストおよび製造時間が低減されるとともに製品の歩
留りを5〜6倍に向上させることができる。
However, according to the method of this embodiment, ceramics (S13N
4) Since there is no need to prepare a restraining frame made of the same product, the manufacturing cost and manufacturing time of the restraining frame can be reduced, and the yield of the product can be improved by 5 to 6 times.

〔発明の効果〕〔Effect of the invention〕

以上の通り本発明に係るセラミックスの研磨方法によれ
ば、ケミカル作用を受けない金属材料で形成された抑え
枠を使用しているため、抑え枠は砥石によるメカニカル
な研磨作用のみを受ける。
As described above, according to the method for polishing ceramics according to the present invention, since the holding frame is made of a metal material that is not subjected to chemical action, the holding frame is subjected only to the mechanical polishing action of the grindstone.

一方、被加工物としてのセラミックスは、砥石によるメ
カニカルな研磨作用に加えて、砥石の成分と部分的に反
応しケミカルな研磨作用をも受ける。
On the other hand, ceramics as a workpiece are subjected to not only the mechanical polishing action of the grindstone, but also the chemical polishing action that partially reacts with the components of the grindstone.

そのため軟質な抑え枠の研磨能率と硬質なセラミックス
の研磨能率とがほぼ等しくなり、抑え枠とセラミックス
との境界部は等しく研磨される。
Therefore, the polishing efficiency of the soft holding frame and the polishing efficiency of the hard ceramic are approximately equal, and the boundary between the holding frame and the ceramic is equally polished.

そのため被加工物としてのセラミックスの端縁部に砥粒
が噛み込んで而だれを発生することは少ない。したがっ
て寸法精度、形状精面、平面精度がともに浸れたセラミ
ックス部品を提供することができる。
Therefore, the abrasive grains are less likely to get caught in the edge of the ceramic workpiece and cause sag. Therefore, it is possible to provide a ceramic component with excellent dimensional accuracy, shape accuracy, and planar accuracy.

特に抑え枠として、被加工物と同等のセラミックス材を
使用せず、安価で加工が容易な汎用の金属材料を使用し
ているため、抑え枠の製造コストおよび製造時間が大幅
に低減される。また、抑え枠を調製するためにセラミッ
クス原料を使用づ−ることがないため、原材料に対する
セラミックス部品の歩留りを大幅に改善できるという優
れた効果を発揮する。
In particular, since the holding frame does not use a ceramic material equivalent to the workpiece, but instead uses a general-purpose metal material that is inexpensive and easy to process, the manufacturing cost and manufacturing time of the holding frame are significantly reduced. Furthermore, since ceramic raw materials are not used to prepare the restraining frame, an excellent effect is exhibited in that the yield of ceramic parts relative to raw materials can be significantly improved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明方法を実施するための研磨装置の一実施
例を示す断面図、第2図は第1図におけるII−II矢
視平面図、第3図(a)、(b)はそれぞれ貼り板上に
被加工物と抑え枠とを固定した状態を示す平面図、断面
図である。 1・・・回転軸、2・・・回転台、3・・・砥石、4・
・・貼り板、5・・・被加工物、6・・・抑え枠、6a
、6b。 5c、5d・・・抑え枠要素、7a、7b・・・回転ロ
ーラ、8・・・フレーム、9・・・回転駆動装置、10
・・・加圧装置。 (j 第 図 第 図 第 図
FIG. 1 is a sectional view showing an embodiment of a polishing apparatus for carrying out the method of the present invention, FIG. 2 is a plan view taken along arrow II-II in FIG. 1, and FIGS. 3(a) and (b) are FIG. 3 is a plan view and a sectional view showing a state in which a workpiece and a restraining frame are fixed on a pasted plate, respectively. 1... Rotating shaft, 2... Rotating table, 3... Grinding stone, 4...
... Pasting board, 5... Workpiece, 6... Holding frame, 6a
, 6b. 5c, 5d... Holding frame element, 7a, 7b... Rotating roller, 8... Frame, 9... Rotating drive device, 10
...Pressure device. (j Figure Figure Figure

Claims (1)

【特許請求の範囲】[Claims] セラミックス被加工物の表面を、セラミックス被加工物
に対しケミカル作用を有する砥石によりメカノケミカル
研磨するセラミックスの研磨方法において、セラミック
ス被加工物の外周側面に、セラミックス被加工物と等し
い高さを有し砥石のケミカル作用を受けない金属材料か
らなる抑え枠を密着配設して研磨することを特徴とする
セラミックスの研磨方法。
In a ceramic polishing method in which the surface of a ceramic workpiece is mechanochemically polished using a grindstone that has a chemical action on the ceramic workpiece, the outer peripheral side of the ceramic workpiece has a height equal to that of the ceramic workpiece. A ceramic polishing method characterized by polishing by closely arranging a holding frame made of a metal material that is not affected by the chemical action of a grindstone.
JP1078642A 1989-03-31 1989-03-31 Polishing method for ceramics Pending JPH02262950A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1078642A JPH02262950A (en) 1989-03-31 1989-03-31 Polishing method for ceramics

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1078642A JPH02262950A (en) 1989-03-31 1989-03-31 Polishing method for ceramics

Publications (1)

Publication Number Publication Date
JPH02262950A true JPH02262950A (en) 1990-10-25

Family

ID=13667521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1078642A Pending JPH02262950A (en) 1989-03-31 1989-03-31 Polishing method for ceramics

Country Status (1)

Country Link
JP (1) JPH02262950A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009255292A (en) * 1994-03-02 2009-11-05 Applied Materials Inc Carrier head and system for chemical mechanical polishing of substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009255292A (en) * 1994-03-02 2009-11-05 Applied Materials Inc Carrier head and system for chemical mechanical polishing of substrate

Similar Documents

Publication Publication Date Title
JP4216025B2 (en) Dresser for polishing cloth and dressing method for polishing cloth using the same
CN101249623B (en) Grinding method and grinding device of circular disk shape substrate
WO2008044408A1 (en) Grindstone
TW471996B (en) Method and apparatus for conditioning grinding stones
JPH03121776A (en) Electrolytic polishing/grinding method and device therefor
JPH02262950A (en) Polishing method for ceramics
JPH0629401B2 (en) Abrasive grain coated with super hard material
JPH06310479A (en) Chamber polishing and mirror polishing of planar work
JPS62292367A (en) Elastic grain abrasive sheet covered with diamond
WO2000024548A1 (en) Polishing apparatus and a semiconductor manufacturing method using the same
JP3065987U (en) Super abrasive grinding surface plate
JP2001155331A (en) Magnetic disk substrate and its grinding method
JPH05285807A (en) Super precision processing
JP3498902B2 (en) Semiconductor wafer flattening device
JP2575934B2 (en) Hard brittle material wrapping method and apparatus
JP2004243465A (en) Diamond lapping surface plate
JPH04261768A (en) Double-side lapping device
JPH09174425A (en) Plane polishing method
JP2004338028A (en) Grinding wheel for grinding, and grinding device equipped with the grinding wheel
JP2001212766A (en) Diamond tool, its manufacturing method and edge grinding device for diamond tool
JP3143651B2 (en) Manufacturing method of alumina grindstone
JP3232323B2 (en) Alumina whetstone
JPH06775A (en) Grinding wheel for electrolytic dressing generating mechanochemical action
JPH10308369A (en) Notch part polishing device and polishing materials which are used for that device
JPH09193002A (en) Surface plate correcting carrier of lapping machine for wafer