JPH02262330A - Si selective epitaxial growth method and equipment used for this method - Google Patents
Si selective epitaxial growth method and equipment used for this methodInfo
- Publication number
- JPH02262330A JPH02262330A JP8149989A JP8149989A JPH02262330A JP H02262330 A JPH02262330 A JP H02262330A JP 8149989 A JP8149989 A JP 8149989A JP 8149989 A JP8149989 A JP 8149989A JP H02262330 A JPH02262330 A JP H02262330A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electron beam
- al2o3
- single crystal
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000010894 electron beam technology Methods 0.000 claims abstract description 18
- 239000013078 crystal Substances 0.000 claims abstract description 17
- 238000000609 electron-beam lithography Methods 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052593 corundum Inorganic materials 0.000 abstract description 13
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 13
- 229910052594 sapphire Inorganic materials 0.000 abstract description 4
- 239000010980 sapphire Substances 0.000 abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052799 carbon Inorganic materials 0.000 abstract description 3
- 238000011109 contamination Methods 0.000 abstract description 2
- 229910007264 Si2H6 Inorganic materials 0.000 abstract 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000010408 film Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
ｒ産業上の利用分野」
この発明は、集積回路、トランジスタ等の半導体製造工
業に於いてＩＣ基板として用いられる単結晶Ａｌ２Ｏ３
上へのＳｉのエピタキシャル成長方法及び該方法に使用
する装置に関するものである。[Detailed Description of the Invention] [Industrial Application Field] This invention is directed to single crystal Al2O3 used as an IC substrate in the semiconductor manufacturing industry such as integrated circuits and transistors.
The present invention relates to a method for epitaxially growing Si on top and an apparatus used in the method.
「従来技術及びその問題点」
単結晶基絶縁板上にＳｉ膜をエピタキシャル成長させた
ＳＯＩ （Ｓｉ ｏｎ Ｉｎ５ｕｌａｔｏｒ）構造は、
高機能。"Prior art and its problems" The SOI (Si on In5ulator) structure in which a Si film is epitaxially grown on a single crystal substrate insulating board is
Highly functional.
高密度、高速、耐放射線用ＩＣ基板として、更に次間代
のＩＣとなる３次ＩＣの基本構造として注目を浴びてい
る。It is attracting attention as a high-density, high-speed, radiation-resistant IC substrate, and as a basic structure for tertiary ICs, which will become the next generation of ICs.
従来このようなＳＯ■構造とするには、単結晶膜全面に
Ｓｉを成長させ、ついで素子間の分離を行ない、ＩＣ素
子領域のみにＳｉを残す方法により行なっていた。しか
して、この方法では、Ｓｉの薄膜の成長を真空チャンバ
ー内で行ない、素子分離を真空外に取り出して行なう必
要があった。Conventionally, such an SO2 structure has been achieved by growing Si on the entire surface of a single crystal film, then separating the elements, and leaving Si only in the IC element region. However, in this method, it was necessary to grow a Si thin film in a vacuum chamber and to perform element isolation by taking the device out of the vacuum.
この発明は、真空チャンバー内で、 ＩＣ素子領域だけ
にＳｉを成長させることのできる単結晶Ａ ｌ ２０３
上への５１のエピタキシャル成長方法及び該方法に使用
する装置を提供することを目的とする。This invention is a single crystal Al 203 that can grow Si only in the IC element region in a vacuum chamber.
It is an object of the present invention to provide a method for epitaxial growth of 51 and an apparatus for use in the method.
ｒ問題点を解決するための手段」
本発明者等は、単結晶絶縁基板の１つであるＡ１２０３
（サファイア）基板上に、Ｓｉ系のガスソースＳｉＨあ
るいはＳ ｉ Ｈ４を用いて、ガスソース分子線エピタ
キシャル成長を行なう研究を鋭意性なった結果、Ａｌ２
Ｏ３基板上に電子ビーム描画した後、Ｓｉ系ガスを導入
すると電子ビーム描画した場所以外に選択的にＳｉ単結
晶が成長することを見出し、本発明に到達した。The present inventors have developed A1203, which is one of the single crystal insulating substrates.
As a result of intensive research on gas source molecular beam epitaxial growth on a (sapphire) substrate using a Si-based gas source SiH or SiH4, we found that Al2
We have discovered that when Si-based gas is introduced after electron beam writing on an O3 substrate, Si single crystals selectively grow in areas other than the areas where electron beam writing has been performed, and have thus arrived at the present invention.
即ち、本発明は、真空装置内に単結晶Ａｌ２Ｏ３基板を
配置し、該Ａｌ２Ｏ３基板上のＩＣ素子領域以外の部位
に電子ビーム描画したのち、Ｓ ＋ Ｈ４あるいはＳｉ
ＨｅなどのＳｉ系ガスを導入してエピタキシャル成長さ
せ、前記Ａｌ２Ｏ３単結晶上の電子ビーム描画した場所
以外の部位に当るＩＣ素子領域にＳｉ単結晶を成長させ
ることを特徴とする。That is, in the present invention, a single crystal Al2O3 substrate is placed in a vacuum apparatus, and after electron beam writing is performed on a portion of the Al2O3 substrate other than the IC element area, S + H4 or Si
It is characterized in that a Si-based gas such as He is introduced to cause epitaxial growth, and a Si single crystal is grown in an IC element region corresponding to a portion of the Al2O3 single crystal other than the location where the electron beam has been drawn.
また上記方法に使用する本発明の装置は、ガスソース分
子績エピタキシャル成長装置と、電子ビーム描画を行な
う装置とを一体的に具備することを特徴とする。Furthermore, the apparatus of the present invention used in the above method is characterized in that it integrally includes a gas source molecular deposition epitaxial growth apparatus and an apparatus for performing electron beam lithography.
「実施例」 次に、本発明の実施例を挙げ１本発明を更に説明する。"Example" Next, the present invention will be further explained with reference to Examples.
サファイア（Ａ１２０３）基板を化学洗浄した後１Ｍｉ
高真空装置内に配置し、基板温度を７５０℃に上昇させ
た後、ＮＯガスを吹き付けてＡｌ２Ｏ３表面上の炭素汚
染を除去する。炭素がＮ２０ガスの吹き付けで除去され
たことは、Ｘ線光電子分光法で確認した。このようにし
て洗浄Ａｌ２Ｏ３表面を得た後に、この表面のＩＣ素子
領域以外の部位に電子ビーム（１５ＫＶ、５０ｐＡ ）
を照射する０例えば第１図（Ａ） 、 （Ｂ）に示すよ
うに、Ａｌ２Ｏ３基板表面上に直線状にこの電子ビーム
を掃引しておく、その後電子ビームを切り、５ｉ２Ｈ８
ガスを例えばｌ ＸＩＯＴｏｒｒノ真空度で基板表面に
照射する。このときの基板温度は、７５０℃とする。こ
のようにして、第１図（Ａ）、（Ｂ）に示すように、電
子ビームが照射された場所にはＳｌの膜が成長せず、そ
れ以外の場所にのみＳｉのエピタキシャル成長が可能で
あることが判明した。電子ビームの照射された場所にＳ
ｉが成長しなかったことは、Ａｕｇｅｒ電子分光分析法
によっても確認することができた。1Mi after chemically cleaning the sapphire (A1203) substrate
After placing the substrate in a high vacuum apparatus and raising the substrate temperature to 750° C., NO gas is blown to remove carbon contamination on the Al2O3 surface. It was confirmed by X-ray photoelectron spectroscopy that carbon was removed by spraying with N20 gas. After obtaining a cleaned Al2O3 surface in this way, an electron beam (15KV, 50pA) was applied to a portion of this surface other than the IC element area.
For example, as shown in Figure 1 (A) and (B), this electron beam is swept in a straight line over the surface of the Al2O3 substrate, and then the electron beam is turned off and 5i2H8
A gas is irradiated onto the substrate surface at a vacuum level of, for example, lXIO Torr. The substrate temperature at this time is 750°C. In this way, as shown in Figures 1 (A) and (B), no Sl film grows in the areas irradiated with the electron beam, and epitaxial growth of Si is possible only in other areas. It has been found. S in the place irradiated by the electron beam
It was also confirmed by Auger electron spectroscopy that i did not grow.
上記方法を行なうには、既存の分子線エピタキシャル成
長装置に電子ビームの描画を行なえる装置例えば超高真
空対応の電子顕微鏡を一体的に取り付けた装置で行なえ
ばよい、この装置を使用すれば１例えば観察しながらｔ
Ｃ素子の描画が可能となり、その後ガスソース分子線エ
ピタキシャル装置により電子ビーム描画した場所以外に
Ｓｉ膜を成長させることができる。To carry out the above method, it is sufficient to use an existing molecular beam epitaxial growth apparatus that is integrated with a device capable of performing electron beam drawing, such as an electron microscope compatible with ultra-high vacuum. While observing
It becomes possible to write a C element, and then use a gas source molecular beam epitaxial device to grow a Si film in a place other than the place where the electron beam has been written.
「発明の効果」
以上述べた如く本発明によれば、直接ＩＣの素子領域だ
けにＳｉを成長させることができるので、通常行なわれ
ている素子間の分離の工程が不必要となるほか、Ｗ＆細
な加工が可能になると共に素子分離と薄膜の成長とを真
空チャンバー内だけで行なうことができ、試料を真空外
に取り出さずにＩＣ素子を形成させることができる。従
って、極めて画期的な技術であり、超々ＬＳＩに向けた
新しい技術となるものである。"Effects of the Invention" As described above, according to the present invention, Si can be directly grown only in the element region of an IC, so the normally performed process of separating elements is not necessary, and W& Fine processing becomes possible, element separation and thin film growth can be performed only within the vacuum chamber, and IC elements can be formed without taking the sample out of the vacuum. Therefore, it is an extremely innovative technology and a new technology for ultra-super LSI.
第１図（ａ）は、サファイア基板上に選択エピタキシャ
ル成長させたＳｉ膜の電子顕微鏡写真。
第１図（ｂ）は、第１図（ａ）の説明図である。
特許出願人 東横化学株式会社FIG. 1(a) is an electron micrograph of a Si film selectively epitaxially grown on a sapphire substrate. FIG. 1(b) is an explanatory diagram of FIG. 1(a). Patent applicant: Toyoko Chemical Co., Ltd.
Claims (2)
、該Ａｌ＿２Ｏ＿３基板上のＩＣ素子領域以外の部位に
電子ビーム描画したのち、ＳｉＨ＿４あるいはＳｉ＿２
Ｈ＿６などのＳｉ系ガスを導入してエピタキシャル成長
させ、前記Ａｌ＿２Ｏ＿３単結晶上の電子ビーム描画し
た場所以外の部位に当るＩＣ素子領域にＳｉ単結晶を成
長させることを特徴とするＡｌ＿２Ｏ＿３単結晶上への
Ｓｉ選択エピタキシャル成長方法。(1) Place a single-crystal Al_2O_3 substrate in a vacuum apparatus, and after performing electron beam writing on a portion of the Al_2O_3 substrate other than the IC element area, SiH_4 or Si_2
A process on the Al_2O_3 single crystal characterized in that a Si-based gas such as H_6 is introduced to cause epitaxial growth, and a Si single crystal is grown in an IC element region corresponding to a part other than the location on the Al_2O_3 single crystal where electron beam writing is performed. Si selective epitaxial growth method.
ビーム描画を行なう装置とを具備することを特徴とする
ガスソース分子線エピタキシャル成長装置。(2) A gas source molecular beam epitaxial growth apparatus characterized by comprising a gas source molecular beam epitaxial growth apparatus and an apparatus for performing electron beam lithography.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1081499A JPH0744152B2 (en) | 1989-04-03 | 1989-04-03 | Si selective epitaxial growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1081499A JPH0744152B2 (en) | 1989-04-03 | 1989-04-03 | Si selective epitaxial growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02262330A true JPH02262330A (en) | 1990-10-25 |
| JPH0744152B2 JPH0744152B2 (en) | 1995-05-15 |
Family
ID=13748067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1081499A Expired - Lifetime JPH0744152B2 (en) | 1989-04-03 | 1989-04-03 | Si selective epitaxial growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0744152B2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5269560A (en) * | 1975-12-08 | 1977-06-09 | Mitsubishi Electric Corp | Electronic line irradiation epitaxial method |
| JPS62120015A (en) * | 1985-11-20 | 1987-06-01 | Fujitsu Ltd | Controlling method for doping |
-
1989
- 1989-04-03 JP JP1081499A patent/JPH0744152B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5269560A (en) * | 1975-12-08 | 1977-06-09 | Mitsubishi Electric Corp | Electronic line irradiation epitaxial method |
| JPS62120015A (en) * | 1985-11-20 | 1987-06-01 | Fujitsu Ltd | Controlling method for doping |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0744152B2 (en) | 1995-05-15 |
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