JPH02260527A - Method and device for laser cvd - Google Patents
Method and device for laser cvdInfo
- Publication number
- JPH02260527A JPH02260527A JP7856589A JP7856589A JPH02260527A JP H02260527 A JPH02260527 A JP H02260527A JP 7856589 A JP7856589 A JP 7856589A JP 7856589 A JP7856589 A JP 7856589A JP H02260527 A JPH02260527 A JP H02260527A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- opening
- thin film
- aperture
- laser cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 13
- 239000010409 thin film Substances 0.000 claims abstract description 23
- 238000001182 laser chemical vapour deposition Methods 0.000 claims description 21
- 230000003287 optical effect Effects 0.000 claims description 8
- 239000010408 film Substances 0.000 abstract description 3
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はレーザＣＶＤ方法およびレーザＣＶＤ装置に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a laser CVD method and a laser CVD apparatus.
従来、この糧のレーザＣＶＤ方法およびレーザＣＶＤ装
置は、原料ガス雰囲気中に置かれた試料表面に、適当な
形状の開口によって整形されたレーザビームを照射して
原料ガスを反応させることによシ、薄膜形成を行うもの
であって、レーザ発振器と、レーザビームを整形する開
口と、レーザビームを結像する加工光学系と、原料がス
を供給するガス供給系と、試料を保持し位置決めする機
構と、試料表面を観察する観察光学系と、これらを制御
する制御系とを有している。Conventionally, this type of laser CVD method and laser CVD apparatus performs a chemical reaction by irradiating the surface of a sample placed in a source gas atmosphere with a laser beam shaped by an appropriately shaped aperture to cause the source gas to react. , which performs thin film formation, includes a laser oscillator, an aperture that shapes the laser beam, a processing optical system that focuses the laser beam, a gas supply system that supplies raw material gas, and holds and positions the sample. It has a mechanism, an observation optical system for observing the sample surface, and a control system for controlling these.
上述した従来のレーザ、ＣＶＤ方法およびレーザＣＶＤ
装置では、一般に以下に述べる理由によシ。Conventional laser, CVD method and laser CVD described above
In general, equipment is not suitable for the following reasons.
薄膜の形成速度が膜の中央部では外縁部に比べて小さく
、この傾向は形成する薄膜の面積の増加とともに顕著と
なり、一様なプロファイルを有する薄膜の形成が困難と
なるという欠点を有する。The formation rate of the thin film is lower at the center of the film than at the outer edge, and this tendency becomes more pronounced as the area of the thin film to be formed increases, making it difficult to form a thin film with a uniform profile.
薄膜の形成速度の不均一の原因としては、第１に開口で
のレーザビームの回折と加工光学系の結像性能とに帰因
する試料表面での光強度分布の不均一という点が指摘さ
れ、これは一般に結像の外縁部では光強度が強く、中央
部では弱いという分布に原因する。また第２に、形成す
る薄膜の中央部では外縁部に比べて原料ガスの供給量が
少ないこと、更に第３に、形成する薄膜の外縁部では試
料表面に吸着された原料ガス分子の寄与があるが、中央
部ではこれが無いこと等である。It has been pointed out that the first reason for the non-uniformity of the thin film formation rate is the non-uniformity of the light intensity distribution on the sample surface due to the diffraction of the laser beam at the aperture and the imaging performance of the processing optical system. , this is generally caused by a distribution in which the light intensity is strong at the outer edge of the image and weak at the center. Second, the amount of source gas supplied to the center of the thin film to be formed is smaller than that to the outer edge, and third, the contribution of source gas molecules adsorbed to the sample surface is smaller at the outer edge of the thin film to be formed. However, this is not the case in the central area.
本発明は従来のもののこのような課題を解決しようとす
るもので、一様なプロファイルを有する薄膜の形成を可
能とするレーザＣＶＤ方法およびレーザＣＶＤ装置を提
供するものである。The present invention aims to solve these problems of the conventional methods, and provides a laser CVD method and a laser CVD apparatus that make it possible to form a thin film having a uniform profile.
本第１の発明によると、原料ガス雰囲気中に置かれた試
料表面に開口により整形したレーザビームを照射し原料
ガスを反応させて薄膜を形成するレーザＣＶＤ方法にお
いて、レーザビームの照射中に前記開口の形状を適宜変
化させてほぼ一様の厚さの薄膜を形成するようにしたこ
とを特徴とするレーザＣＶＤ方法が得られる。According to the first invention, in a laser CVD method in which a laser beam shaped by an aperture is irradiated onto the surface of a sample placed in a source gas atmosphere to react with the source gas to form a thin film, the A laser CVD method is obtained in which the shape of the opening is appropriately changed to form a thin film having a substantially uniform thickness.
また本第２の発明によると、レーザ発振器と。Further, according to the second invention, a laser oscillator.
レーザビームを整形する開口と、これを試料表面に結像
する加工光学系と、原料がスを供給するガス供給系と、
試料を保持し位置決めする機構と。An aperture that shapes the laser beam, a processing optical system that focuses the laser beam on the sample surface, and a gas supply system that supplies the raw material with gas.
A mechanism for holding and positioning the sample.
試料表面を観察する観察光学系と、これらを制御する制
御系とを有するレーザＣＶＤ装置において。In a laser CVD apparatus having an observation optical system for observing a sample surface and a control system for controlling them.
レーザ照射中に開口の形状を制御可能に変化させる手段
を有することを特徴とするレーザＣＶＤ装置が得られる
。A laser CVD apparatus is obtained which is characterized by having means for controllably changing the shape of the aperture during laser irradiation.
次に２本発明について図面を参照して説明する。 Next, two aspects of the present invention will be explained with reference to the drawings.
第１図は本発明のレーザＣＶＤ装置の一実施例の模式図
、第２図（−）と（ｂ）は本発明のレーザＣＶＤ方法に
おけるレーザ照射中の開口形状の変化と、形成される薄
膜のプロファイルを示す図である。Fig. 1 is a schematic diagram of an embodiment of the laser CVD apparatus of the present invention, and Figs. 2 (-) and (b) show changes in the aperture shape during laser irradiation in the laser CVD method of the present invention and the formed thin film. FIG.
はじめに第１図を参照して本発明のレーザＣＶＤ装置の
構成を説明する。第１図において、レーザ発振器１から
射出されるレーザビームはエキスパンダ２により拡大さ
れ、矩形開口３によシ整形される。この開口像は結像レ
ンズ４ａ及ば対物レンズ４ｂにより、気密チャンバー６
内のＸＹステーゾ５上に保持された試料１１の表面にウ
ィンドー６１を通して照射される。ガス供給系７・によ
υ供。First, the configuration of the laser CVD apparatus of the present invention will be explained with reference to FIG. In FIG. 1, a laser beam emitted from a laser oscillator 1 is expanded by an expander 2 and shaped by a rectangular aperture 3. This aperture image is formed in the airtight chamber 6 by the imaging lens 4a and the objective lens 4b.
The surface of the sample 11 held on the XY stethoscope 5 is irradiated through the window 61. Gas supply system 7.
給された原料ガスは、試料１１の表面に原料ガス雰囲気
を形成するが、同時に試料１１表面はガス処理・排気系
により排気され、試料１１の表面の一部のみを原料ガス
雰囲気とする。矩形開口３は・やイロット照明１０によ
り照明され、試料表面に結像された開口像を接眼レンズ
１２および観察用光源１２ａを含む観察光学系で観察す
ることにより１位置決めを行う。The supplied source gas forms a source gas atmosphere on the surface of the sample 11, but at the same time, the surface of the sample 11 is exhausted by the gas treatment/exhaust system, leaving only a portion of the surface of the sample 11 in the source gas atmosphere. The rectangular aperture 3 is illuminated by an illumination illumination 10, and one position is determined by observing the aperture image formed on the sample surface with an observation optical system including an eyepiece 12 and an observation light source 12a.
矩形開口３の形状は、２軸のモータ１３にょシ。The rectangular opening 3 is shaped like a two-axis motor 13.
縦方向、横方向に独立に開口幅を変えることができ、変
位センサ１４により開口幅が変えられる。The opening width can be changed independently in the vertical direction and the horizontal direction, and the opening width is changed by the displacement sensor 14.
制御系９はレーザ発振器１の０Ｎ１０ＦＦ 、ガス供給
系７．ガス処理・排気系８の制御、ＸＹステー・ゾ５の
位置制御等を行うとともに、矩形開口３の形状制御を行
う。Control system 9 includes 0N10FF of laser oscillator 1, gas supply system 7. It controls the gas treatment/exhaust system 8, the position of the XY stay/zoo 5, etc., and also controls the shape of the rectangular opening 3.
次に第２図を参照して薄膜形成方法を説明する。Next, a method for forming a thin film will be explained with reference to FIG.
第２図（−）に示すように、開口を所望の形状（２１）
とし、レーザ照射を行い、ある程度薄膜を成形させた後
−旦開口を狭め（２２）レーザ照射を行いながら徐々に
広げてゆ＜ （２２，２３，２４）ことにより、第２図
（ｂ）Ｋ示すように最初の段階（２５）の中央部の膜厚
不足が、第２番目の照射による増加分２６、第３番目の
増加分２７．第４番目の増加分２８と徐々に補われてゆ
＜ （２６，２７，２８）。狭める開口の幅、開口を広
げる速度を適当な値とすることにより、小さい凸凹はあ
るが、全体としてほぼ一様な厚さを有する薄膜の形成が
得られる。As shown in Figure 2 (-), shape the opening into the desired shape (21).
After forming a thin film to some extent by laser irradiation, the aperture is first narrowed (22) and then gradually widened while laser irradiation (22, 23, 24). As shown, the film thickness insufficiency at the center of the first stage (25) is increased by an increase of 26 due to the second irradiation, and an increase of 27. It is gradually compensated for by the fourth increase of 28 (26, 27, 28). By setting the width of the aperture to be narrowed and the speed at which the aperture is widened to appropriate values, it is possible to form a thin film having a substantially uniform thickness as a whole, although there are small irregularities.
第３図は１本発明の第２の実施例の説明図である。FIG. 3 is an explanatory diagram of a second embodiment of the present invention.
第３図（−）において、矩形開口３０１と、スリット開
口３０２を重ね合わせ、スリット３０２を一方向に一定
速度で掃引しなからレーザ照射を行うことＫより、矩形
開口３０１の形状を有し、第３図（ｂ）の破線３１に示
される様な一様なプロファイルを有する薄膜の形成を行
うものである。この実施例は、スリット開口３０２の長
さ方向の分布（図でいえば右方から見た分布）はほぼ一
様であることから実現できるものである。In FIG. 3(-), the rectangular opening 301 and the slit opening 302 are overlapped, and the slit 302 is swept in one direction at a constant speed before laser irradiation. A thin film having a uniform profile as shown by the broken line 31 in FIG. 3(b) is formed. This embodiment can be realized because the distribution of the slit openings 302 in the length direction (distribution viewed from the right in the figure) is substantially uniform.
第４図は第２の実施例に用いる矩形開口部の平面図とそ
のＡ −Ａ’断面図で、スリット開口を有する薄板４３
を挟んで、中心対称に移動する横方向ナイフェツジ４１
．縦方向ナイフェツジ４２を摺動可能に密接して配置す
ることにより、矩形開口と、スリット開口との間の加工
ピントずれを防いでいる。FIG. 4 is a plan view and an A-A' cross-sectional view of a rectangular opening used in the second embodiment, and shows a thin plate 43 having a slit opening.
The lateral knife 41 moves symmetrically with the center in between.
．． By arranging the vertical knives 42 so as to be slidable and close to each other, a shift in processing focus between the rectangular opening and the slit opening is prevented.
以上説明したように本発明は、開口形状を適宜変化させ
なからレーザ照射を行うことにより、一様なプロファイ
ルを有する薄膜の形成を行うことができる効果がある。As explained above, the present invention has the advantage that a thin film having a uniform profile can be formed by performing laser irradiation without appropriately changing the opening shape.
第１図は本発明のレーザＣＶＤ装置の第１の実施例の模
式図、第２線（ａ） 、 （ｂ）は本発明のレーザＣＶ
Ｄ方法の第１の実施例における開口形状の変化を示す図
と形成される薄膜のプロファイルを示す図。
第３図（ａ） 、 （ｂ）は禾発明のレーザＣＶＤ方法
の第２の実施例における開口形状の変化を示す図と形成
される薄膜のプロファイルを示す図、第４図（ａ） 、
（ｂ）は本発明のレーザＣＶＤ方法の第２の実施例を
実現する矩形開口部分の平面図とそのＡ −Ａ’断面図
である。
記号の説明＝１・・・レーザ発振器、２・・・エキス・
レンズ、３・・・矩形開口＋ ４ ａ・・・結像レンズ
、４ｂ・・・対物レンズ、５・・・ＸＹステージ、６・
・・気密チャンバ、７・・・ガス供給系、８・・・ガス
処理・排気系、９・・・制御系、１０・・・ｉ？イロノ
ト照明、１１・・・試料。
１２・・・接眼レンズ、１２ａ・・・観察用光源、１３
・・・モータ、１４・・・変位センサ、４１川横方向ナ
イフエツジ、４２・・・縦方向ナイフェツジ、４３・・
・スリット開口を有する薄板、６１・・・ウィンドー、
３ｏ１・・・矩形開口、３０２・・・スリット開口。
第２図FIG. 1 is a schematic diagram of the first embodiment of the laser CVD apparatus of the present invention, and the second lines (a) and (b) are the laser CVD apparatus of the present invention.
FIG. 4 is a diagram showing changes in the shape of the opening and a profile of the formed thin film in the first example of Method D; FIGS. 3(a) and 3(b) are diagrams showing changes in the aperture shape and the profile of the formed thin film in the second embodiment of the laser CVD method of the invention, and FIG. 4(a),
(b) is a plan view of a rectangular opening portion realizing a second embodiment of the laser CVD method of the present invention and a cross-sectional view thereof taken along line A-A'. Explanation of symbols = 1... Laser oscillator, 2... Extract...
Lens, 3... Rectangular aperture + 4 a... Imaging lens, 4b... Objective lens, 5... XY stage, 6...
... Airtight chamber, 7... Gas supply system, 8... Gas treatment/exhaust system, 9... Control system, 10... i? Ironoto Lighting, 11...Sample. 12... Eyepiece lens, 12a... Observation light source, 13
... Motor, 14... Displacement sensor, 41 River horizontal knife edge, 42... Vertical knife edge, 43...
- Thin plate with slit opening, 61...window,
3o1... rectangular opening, 302... slit opening. Figure 2
Claims (1)
り整形したレーザビームを照射し原料ガスを反応させて
薄膜を形成するレーザＣＶＤ方法において、前記レーザ
ビームの照射中に前記開口の形状を適宜変化させほぼ一
様な厚さの薄膜を形成するようにしたことを特徴とする
レーザＣＶＤ方法。 ２、レーザ発振器と、レーザビームを整形する開口と、
この開口を試料表面に結像する加工光学系と、原料ガス
を供給するガス供給系と、試料を保持し位置決めする機
構と、試料表面を観察する観察光学系と、これらを制御
する制御系とを有するレーザＣＶＤ装置において、前記
レーザの照射中に前記開口の形状を制御可能に変化させ
る手段を有することを特徴とするレーザＣＶＤ装置。[Claims] 1. In a laser CVD method in which a laser beam shaped by an aperture is irradiated onto a sample surface placed in a source gas atmosphere to react with the source gas to form a thin film, during irradiation with the laser beam A laser CVD method characterized in that the shape of the opening is appropriately changed to form a thin film having a substantially uniform thickness. 2. A laser oscillator, an aperture that shapes the laser beam,
A processing optical system that images this aperture onto the sample surface, a gas supply system that supplies source gas, a mechanism that holds and positions the sample, an observation optical system that observes the sample surface, and a control system that controls these. A laser CVD apparatus comprising: means for controllably changing the shape of the opening during irradiation with the laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1078565A JPH0834188B2 (en) | 1989-03-31 | 1989-03-31 | Laser CVD method and laser CVD apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1078565A JPH0834188B2 (en) | 1989-03-31 | 1989-03-31 | Laser CVD method and laser CVD apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02260527A true JPH02260527A (en) | 1990-10-23 |
| JPH0834188B2 JPH0834188B2 (en) | 1996-03-29 |
Family
ID=13665421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1078565A Expired - Lifetime JPH0834188B2 (en) | 1989-03-31 | 1989-03-31 | Laser CVD method and laser CVD apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0834188B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6090458A (en) * | 1994-12-22 | 2000-07-18 | Nec Corporation | Method and apparatus for film formation by chemical vapor deposition |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01156538U (en) * | 1988-04-20 | 1989-10-27 |
-
1989
- 1989-03-31 JP JP1078565A patent/JPH0834188B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01156538U (en) * | 1988-04-20 | 1989-10-27 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6090458A (en) * | 1994-12-22 | 2000-07-18 | Nec Corporation | Method and apparatus for film formation by chemical vapor deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0834188B2 (en) | 1996-03-29 |
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