JPH02260466A - Semiconductor radiation detector - Google Patents
Semiconductor radiation detectorInfo
- Publication number
- JPH02260466A JPH02260466A JP1080347A JP8034789A JPH02260466A JP H02260466 A JPH02260466 A JP H02260466A JP 1080347 A JP1080347 A JP 1080347A JP 8034789 A JP8034789 A JP 8034789A JP H02260466 A JPH02260466 A JP H02260466A
- Authority
- JP
- Japan
- Prior art keywords
- detectors
- single crystal
- radiation
- semiconductor
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 230000005855 radiation Effects 0.000 title claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 17
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 14
- 238000002955 isolation Methods 0.000 abstract 2
- 230000002285 radioactive effect Effects 0.000 abstract 1
- 238000001514 detection method Methods 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、Ｘ線、γ線、β線、中性子線などの放射線を
検出する半導体放射線検出器に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a semiconductor radiation detector that detects radiation such as X-rays, γ-rays, β-rays, and neutrons.
従来の技術
従来、複数の半導体放射線検出器を使って放射線検出装
置を構成する場合、独立した単品の半導体放射線検出器
を組合せていた。例えば、β線とγ線の混在基でβ線を
分離して測定するような放射線検出装置の場合、γ線に
対する感度のそろった２個の単品半導体放射線検出器を
使用して、１つの検出器はβ線とγｉ両方に感度を持つ
ように、もう１つの検出器はγ線にのみ感度を持つよう
にしておき、それらの感度の差し引きによってβ線のみ
の感度を求めるようにしていた。また、放射線の環境モ
ニタリングに使用するサーベイメータやエリアモニタの
場合、線量率（μＳｖ／ｈｒ）を広範囲で精度良く測定
する仁めに放射線感度の異なる２個の単品半導体放射線
検出器で構成して、線量率の小さい場合は感度の大きな
検出器を使用して線量率の大きい場合は測定回路での飽
和現象を避けるために感度の小さな検出器を使用してい
た。BACKGROUND ART Conventionally, when constructing a radiation detection apparatus using a plurality of semiconductor radiation detectors, independent single semiconductor radiation detectors were combined. For example, in the case of a radiation detection device that separates and measures β rays in a mixed group of β rays and γ rays, two single semiconductor radiation detectors with the same sensitivity to γ rays are used to perform one detection. One detector was sensitive to both β rays and γi, and the other detector was sensitive only to γ rays, and by subtracting these sensitivities, the sensitivity for only β rays was determined. In addition, in the case of survey meters and area monitors used for environmental monitoring of radiation, they are configured with two single semiconductor radiation detectors with different radiation sensitivities to accurately measure the dose rate (μSv/hr) over a wide range. When the dose rate was low, a detector with high sensitivity was used, and when the dose rate was high, a detector with low sensitivity was used to avoid saturation in the measurement circuit.
発明が解決しようとする課題
しかしながらこれらの場合は検出器が単品であるため、
検出装置が大型となることや、放射線を分離測定する検
出装置の場合検出器間の感度のバラツキが大きくなり分
離測定精度が悪いという問題点があった。Problems to be Solved by the Invention However, in these cases, since the detector is a single item,
There are problems in that the detection device becomes large, and in the case of a detection device that separates and measures radiation, there is a large variation in sensitivity between detectors, resulting in poor separation measurement accuracy.
本発明は上記問題点を解決し得る半導体放射線検出器を
提供することを目的とする。An object of the present invention is to provide a semiconductor radiation detector that can solve the above problems.
課題を解決するための手段
上記問題点を解決するため、本発明は１つの単結晶半導
体基板と、前記基板上に堆積された非晶質半導体層と、
前記非晶質半導体層上に形成された金属電極と、前記基
板の非晶質半導体層を堆積しない面に設けられた金属電
極とを含み、前記非晶質半導体層側の金属電極下の前記
単結晶半導体基板内に広がる空乏層を放射線有感領域と
する、少なくとも２個以上の独立した放射線検出器を前
記１つの単結晶半導体基板に備えた半導体放射線検出器
を提供する。Means for Solving the Problems In order to solve the above problems, the present invention provides a single crystal semiconductor substrate, an amorphous semiconductor layer deposited on the substrate,
a metal electrode formed on the amorphous semiconductor layer; and a metal electrode provided on the surface of the substrate on which the amorphous semiconductor layer is not deposited; The present invention provides a semiconductor radiation detector comprising at least two or more independent radiation detectors on one single crystal semiconductor substrate, each of which has a radiation sensitive region as a depletion layer extending within the single crystal semiconductor substrate.
作用
本発明の半導体放射線検出器は複数の検出器を同一の単
結晶半導体基板に形成するため検出部の集積化ができ、
検出装置の小型化ができる。また、同じ条件で製作され
た検出器を使用するため放射線を分離測定する検出装置
用の検出器としては検出器間の感度のバラツキがな（分
離測定精度を向上できる。Function: Since the semiconductor radiation detector of the present invention has a plurality of detectors formed on the same single crystal semiconductor substrate, the detection parts can be integrated.
The detection device can be made smaller. In addition, since detectors manufactured under the same conditions are used, there is no variation in sensitivity between detectors (separation measurement accuracy can be improved) as a detector for a detection device that separates and measures radiation.
実施例 以下図面に基づき、本発明の詳細な説明する。Example The present invention will be described in detail below based on the drawings.
実施例１
第１図は、γ（Ｘ）線φββ線中中性子線分離測定型半
導体放射線検出器の断面構成図を示すものである。まず
、単結晶半導体基板としてシリコン単結晶基板（Ｐ型、
ｌＯｋΩａｍ） ｌを用いてその上部全面に非晶質シリ
コンカーバイト層２を平行平板型プラズマＣＶＤ装置に
よって以下の条件で形成する。Embodiment 1 FIG. 1 shows a cross-sectional configuration diagram of a semiconductor radiation detector of neutron beam separation measurement type in γ(X) rays, φββ rays, and neutron beams. First, a silicon single crystal substrate (P type,
An amorphous silicon carbide layer 2 is formed on the entire upper surface of the amorphous silicon carbide layer 2 using a parallel plate type plasma CVD apparatus under the following conditions.
基板温度 ２００℃
使用ガス モノシラン（１００％）、メタン（１００
％）ガス流量 モノシラン ７０ＳＣＣＭメタン
３０ＳＣＣＭ
０．８Ｔｏｒｒ’
５０ｎ−
ガス圧力
膜 厚
ＲＦ電力 １２Ｗ
次に、非晶質シリコンカーバイト層２を堆積した面上に
３個の同面積のアルミニウム電極３ ａ。Substrate temperature 200℃ Gas used Monosilane (100%), Methane (100%)
%) Gas flow rate Monosilane 70SCCM Methane
30SCCM 0.8Torr' 50n- Gas pressure film thickness RF power 12W Next, on the surface on which the amorphous silicon carbide layer 2 was deposited, three aluminum electrodes 3a with the same area were placed.
３ ｂ＋ ３ ｃをメタルマスクを使用して抵抗加熱
蒸着装置によ、り約３００ｎ鵬形成する。また、シリコ
ン単結晶基板１の非晶質シリコンカーバイト層を堆積し
ない面の全面にアルミニウム電極４を抵抗加熱蒸着装置
により約３００ｎｍ形成する。更に、アルミニウム電極
３ｃ上にリード線取り出し用の部分を残してＩ＠Ｂを高
濃度に含む非晶質ＢＮ層５を平行平板型プラズマＣＶＤ
装置を用いて以下の条件で形成する。3B+3C is formed in a thickness of about 300 nm using a resistance heating evaporation apparatus using a metal mask. Further, an aluminum electrode 4 of about 300 nm is formed on the entire surface of the silicon single crystal substrate 1 on which the amorphous silicon carbide layer is not deposited using a resistance heating evaporation device. Furthermore, an amorphous BN layer 5 containing a high concentration of I@B is formed by parallel plate plasma CVD, leaving a part for lead wire extraction on the aluminum electrode 3c.
It is formed using an apparatus under the following conditions.
基板温度 ３００℃以下
使用ガス ＢｇＨａ（”８７０％以上、水素希釈）ガ
ス圧力 ０．８Ｔｏｒｒ
膜 厚 ５００ｎｍ
ＲＦ電力 ５０Ｗ
その後、パッケージのステム６ａ上に銀ペーストで検出
器をマウントし３個の検出器からのそれぞれの信号Ｒ＋
、 Ｒｉ−Ｒｉを後段のプリアンプ回路へ送るために
リード線の取り付けを行なう・ 最後に、パッケージの
フタ８ｂ（Ｆｅｓ 約２００μｍ）を取り付ける。こ
の時、アルミニウム電極３ａ上の部分のみ遮光のために
３０μｍ程度のアルミニウム蒸着をしたポリエチレンフ
ィルム７を張った構造とする。これらの半導体検出器に
逆バイアス電圧を同電圧印加しγ（Ｘ）線・β線番中性
子線（ｎ）の混在基で使用した時のそれぞれの放射線に
よって発生する信号をＳγ、Ｓβ、ｓｎとするとＲ１゜
Ｒ２，Ｒｉとの間に
Ｒ、＝ Ｓγ＋Ｓβ ・・・・・・（１）Ｒｅ ＝Ｓ
γ ・・・・・・（２）Ｒ３＝Ｓγ＋Ｓｎ
・・・・・・（３）の関係がある。即ち、飛程の長いγ
（Ｘ）線に対してはそれぞれの半導体検出器で検出され
単結晶半導体基板内に広がる放射線有感領域である空乏
層の大きさが等しいため感度が等しい。ところが、飛程
の短いβ線は薄い入射窓下の検出器でのみ検出される。Substrate temperature: 300°C or less Gas used: BgHa (over 870%, diluted with hydrogen) Gas pressure: 0.8 Torr Film thickness: 500 nm RF power: 50 W After that, the detector was mounted on the stem 6a of the package with silver paste, and the three detectors were each signal R+
, Attach the lead wire to send Ri-Ri to the subsequent preamplifier circuit.Finally, attach the package lid 8b (Fes approximately 200 μm). At this time, a polyethylene film 7 on which aluminum is vapor-deposited to a thickness of about 30 μm is stretched to shield only the portion above the aluminum electrode 3a from light. When the same reverse bias voltage is applied to these semiconductor detectors and used in a mixed group of γ (X) rays and β neutron beams (n), the signals generated by each radiation are expressed as Sγ, Sβ, and sn. Then, between R1゜R2 and Ri, R = Sγ + Sβ ... (1) Re = S
γ ・・・・・・(2) R3=Sγ+Sn
...There is the relationship (3). In other words, γ with a long range
For (X) rays, the sensitivities are equal because the sizes of the depletion layers, which are radiation sensitive regions detected by the respective semiconductor detectors and spread within the single crystal semiconductor substrate, are equal. However, β-rays, which have a short range, can only be detected by a detector below the thin entrance window.
また、中性子線はＢＮ層を被膜された検出器でのみ”Ｂ
（ｎ＋ α）反応によって放出されたα線が検出され
る。In addition, neutron beams can only be detected by detectors coated with a BN layer.
The α rays emitted by the (n+α) reaction are detected.
（１）〜（３）式からγ（Ｘ）線・β線・中性子線の信
号は、
Ｓγ”Ｒ２・・・・・・（４）
Ｓβ”Ｒｌ−Ｒａ ・・・・・・（５）Ｓ ｎ
＝Ｒｓ−Ｒｅ ”” （８）となる。From equations (1) to (3), the signals of γ(X) rays, β rays, and neutron rays are: Sγ"R2...(4) Sβ"Rl-Ra...(5) Sn
=Rs-Re"" (8).
３個の半導体検出器が同一の単結晶半導体基板に形成で
きるため検出部の集積化ができ検出装置の小型化ができ
る。また、３個の半導体放射線検出器はγ（Ｘ）線に対
する感度が揃っているため、検出装置のγ（Ｘ）線・β
線・中性子線の分離測定精度が向上する。Since three semiconductor detectors can be formed on the same single crystal semiconductor substrate, the detection section can be integrated and the detection device can be downsized. In addition, since the three semiconductor radiation detectors have the same sensitivity to γ(X) rays, the detection device's γ(X) rays and β
Improves the accuracy of separating and measuring radiation and neutron beams.
なお、単結晶半導体基板と□してテルル化カドミウムや
ガリウムヒ素を使用してもよく、非晶質半導体層として
非晶質シリコンを使用してもよい。Note that cadmium telluride or gallium arsenide may be used as the single crystal semiconductor substrate, and amorphous silicon may be used as the amorphous semiconductor layer.
実施例２
第２図は、γ（Ｘ）線用サーベイメータに使用する半導
体放射線検出器の斜視構成図を示すものである。まず、
単結晶半導体基板としてシリコン単結晶基板（Ｐ型、１
ＯｋＯｃｓ） ８を用いてその上部全面に非晶質シリコ
ン層９を平行平板型プラズマＣＶＤ装置によって以下の
条件で形成する。Embodiment 2 FIG. 2 shows a perspective configuration diagram of a semiconductor radiation detector used in a γ(X)-ray survey meter. first,
A silicon single crystal substrate (P type, 1
Using OkOcs) 8, an amorphous silicon layer 9 is formed on the entire upper surface thereof using a parallel plate plasma CVD apparatus under the following conditions.
基板温度 ２００”Ｃ
使用ガス モノシラン（１００％）
ガス流量 １１００５ＣＣ
ガス圧力 ０．８Ｔｏｒｒ
膜 厚 夏μｍ
ＲＦ電力 １２Ｗ
次に、非晶質シリコン層９を堆積した面上に２個の異な
る面積のアルミニウム電極１０ａ （小面積）、１０ｂ
（大面積）をメタルマスクを使用して抵抗加熱蒸着装置
により約３００ｏｍ形成する。また、非晶質シリコン層
を堆積しない面の全面にアルミニウム電極１１を抵抗加
熱蒸着装置により約３００Ｉ１ｍ形成する。２個の検出
器からのそれぞれの信号Ｒ□、Ｒ１，は線量率の大小に
よって使い分ける。Substrate temperature 200”C Gas used Monosilane (100%) Gas flow rate 11005CC Gas pressure 0.8 Torr Film thickness Summer μm RF power 12W Next, two aluminum electrodes with different areas were placed on the surface on which the amorphous silicon layer 9 was deposited. 10a (small area), 10b
(large area) is formed with a thickness of about 300 ohm using a resistance heating evaporation device using a metal mask. Further, an aluminum electrode 11 having a thickness of about 300 I1 is formed on the entire surface on which the amorphous silicon layer is not deposited using a resistance heating vapor deposition apparatus. The respective signals R□ and R1 from the two detectors are used depending on the magnitude of the dose rate.
即ち、γ（Ｘ）線の線量率の高い場合はＲ＋ ＋の信号
を採用し、線量率の低い場合は感度を向上し測定精度を
向上させるためにＲ１２の信号を採用する。That is, when the dose rate of γ(X) rays is high, the R+ signal is used, and when the dose rate is low, the R12 signal is used to improve sensitivity and measurement accuracy.
この半導体放射線検出器によってγ（Ｘ）線の線量率が
広範囲で高精度に測定できるサーベイメータが小型化で
きる。With this semiconductor radiation detector, it is possible to miniaturize a survey meter that can measure the dose rate of γ(X) rays over a wide range with high precision.
なお、単結晶半導体基板としてテルル化カドミウムやガ
リウムヒ素を使用してもよく、非晶質半導体層として非
晶質シリコンカーバイトを使用してもよい。Note that cadmium telluride or gallium arsenide may be used as the single crystal semiconductor substrate, and amorphous silicon carbide may be used as the amorphous semiconductor layer.
発明の効果
上記本発明によれば、複数の半導体検出器が同一の単結
晶半導体基板に形成できるため検出部の集積化ができ、
同じ条件で製作できるため放射線を分離測定する検出装
置用の検出器としては検出器間の感度のバラツキがなく
分離測定精度を向上でき実用上極めて有効である。Effects of the Invention According to the present invention, since a plurality of semiconductor detectors can be formed on the same single crystal semiconductor substrate, the detection section can be integrated.
Since it can be manufactured under the same conditions, it is extremely effective in practice as a detector for a detection device that separates and measures radiation, as there is no variation in sensitivity between detectors, improving the accuracy of separation and measurement.
第１図は本発明の実施例１のγ（Ｘ）線・β線ｅ中性子
線の分離測定型半導体放射線検出器の断面構成図、第２
図は実施例２のγ（Ｘ）線用サーベイメータに使用する
半導体放射線検出器の斜視構成図である。
１．８・・・・シリコン単結晶基板、２・・・・非晶質
シリコンカーバイト層、 ３ａ＋３ｂ＋３ｃ＋４＋１０
ａ、１０ｂ、１１・・・・アルミニウム！極、５・・・
・ＢＮｍ、８ ａ・・・・パッケージ（ステム）、８ｂ
・・・・パッケージ（フタ）、７・・・・ポリエチレン
フィルム、９・・・・非晶質シリコン層。FIG. 1 is a cross-sectional configuration diagram of a semiconductor radiation detector that separately measures γ (X) rays, β rays, and neutron beams according to Embodiment 1 of the present invention, and FIG.
The figure is a perspective configuration diagram of a semiconductor radiation detector used in the γ(X)-ray survey meter of Example 2. 1.8...Silicon single crystal substrate, 2...Amorphous silicon carbide layer, 3a+3b+3c+4+10
a, 10b, 11...aluminum! Extreme, 5...
・BNm, 8a...Package (stem), 8b
...Package (lid), 7..Polyethylene film, 9..Amorphous silicon layer.
Claims (6)
れた非晶質半導体層と、前記非晶質半導体層上に形成さ
れた金属電極と、前記基板の非晶質半導体層を堆積しな
い面に設けられた金属電極とを含み、前記非晶質半導体
層側の金属電極下の前記単結晶半導体基板内に広がる空
乏層を放射線有感領域とする、少なくとも２個以上の独
立した放射線検出器を前記１つの単結晶半導体基板に備
えた半導体放射線検出器。(1) One single crystal semiconductor substrate, an amorphous semiconductor layer deposited on the substrate, a metal electrode formed on the amorphous semiconductor layer, and the amorphous semiconductor layer of the substrate at least two or more independent radiation sources, including a metal electrode provided on a non-crystalline surface, and whose radiation-sensitive region is a depletion layer that spreads within the single crystal semiconductor substrate under the metal electrode on the amorphous semiconductor layer side. A semiconductor radiation detector comprising a detector on the one single crystal semiconductor substrate.
質半導体層として非晶質シリコンまたは非晶質シリコン
カーバイトを使用することを特徴とする請求項１に記載
の半導体放射線検出器。(2) The semiconductor radiation detector according to claim 1, wherein silicon is used as the single crystal semiconductor substrate, and amorphous silicon or amorphous silicon carbide is used as the amorphous semiconductor layer.
用し、非晶質半導体層として非晶質シリコンまたは非晶
質シリコンカーバイトを使用することを特徴とする請求
項１に記載の半導体放射線検出器。(3) The semiconductor radiation detector according to claim 1, wherein cadmium telluride is used as the single crystal semiconductor substrate, and amorphous silicon or amorphous silicon carbide is used as the amorphous semiconductor layer. .
非晶質半導体層として非晶質シリコンまたは非晶質シリ
コンカーバイトを使用することを特徴とする請求項１に
記載の半導体放射線検出器。(4) Using gallium arsenide as a single crystal semiconductor substrate,
2. The semiconductor radiation detector according to claim 1, wherein amorphous silicon or amorphous silicon carbide is used as the amorphous semiconductor layer.
２個以上の独立した放射線検出器を１つの単結晶半導体
基板に備えた請求項１から４のいずれかに記載の半導体
放射線検出器。(5) The semiconductor radiation detector according to any one of claims 1 to 4, wherein one single crystal semiconductor substrate is provided with at least two or more independent radiation detectors that detect different types of radiation rays.
以上の独立した放射線検出器を１つの単結晶半導体基板
に備えた請求項１から４のいずれかに記載の半導体放射
線検出器。(6) The semiconductor radiation detector according to any one of claims 1 to 4, wherein one single crystal semiconductor substrate is provided with at least two or more independent radiation detectors having different sizes of radiation-sensitive regions.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1080347A JPH02260466A (en) | 1989-03-30 | 1989-03-30 | Semiconductor radiation detector |
| US07/483,872 US5070027A (en) | 1989-02-23 | 1990-02-23 | Method of forming a heterostructure diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1080347A JPH02260466A (en) | 1989-03-30 | 1989-03-30 | Semiconductor radiation detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02260466A true JPH02260466A (en) | 1990-10-23 |
Family
ID=13715723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1080347A Pending JPH02260466A (en) | 1989-02-23 | 1989-03-30 | Semiconductor radiation detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02260466A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04208575A (en) * | 1990-12-03 | 1992-07-30 | Matsushita Electric Ind Co Ltd | Hetero junction diode and radiation detector using the same |
| JP2007059551A (en) * | 2005-08-23 | 2007-03-08 | Fuji Electric Holdings Co Ltd | Radiation detecting device |
| JP2016539324A (en) * | 2013-12-20 | 2016-12-15 | コリア アトミック エナジー リサーチ インスティテュートＫｏｒｅａ Ａｔｏｍｉｃ Ｅｎｅｒｇｙ Ｒｅｓｅａｒｃｈ Ｉｎｓｔｉｔｕｔｅ | Heterogeneous radiation measuring sensor and manufacturing method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5893292A (en) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | Manufacture of semiconductor radiation detector |
| JPS59227168A (en) * | 1983-06-08 | 1984-12-20 | Fuji Electric Corp Res & Dev Ltd | Semiconductor radioactive ray detector |
| JPS62293681A (en) * | 1986-06-12 | 1987-12-21 | Fuji Electric Co Ltd | Semiconductor radiation detecting element |
| JPS6316675A (en) * | 1986-07-09 | 1988-01-23 | Matsushita Electric Ind Co Ltd | Radiation detector |
| JPS6360978B2 (en) * | 1981-07-02 | 1988-11-28 |
-
1989
- 1989-03-30 JP JP1080347A patent/JPH02260466A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6360978B2 (en) * | 1981-07-02 | 1988-11-28 | ||
| JPS5893292A (en) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | Manufacture of semiconductor radiation detector |
| JPS59227168A (en) * | 1983-06-08 | 1984-12-20 | Fuji Electric Corp Res & Dev Ltd | Semiconductor radioactive ray detector |
| JPS62293681A (en) * | 1986-06-12 | 1987-12-21 | Fuji Electric Co Ltd | Semiconductor radiation detecting element |
| JPS6316675A (en) * | 1986-07-09 | 1988-01-23 | Matsushita Electric Ind Co Ltd | Radiation detector |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04208575A (en) * | 1990-12-03 | 1992-07-30 | Matsushita Electric Ind Co Ltd | Hetero junction diode and radiation detector using the same |
| JP2007059551A (en) * | 2005-08-23 | 2007-03-08 | Fuji Electric Holdings Co Ltd | Radiation detecting device |
| JP4678259B2 (en) * | 2005-08-23 | 2011-04-27 | 富士電機ホールディングス株式会社 | Radiation detection device |
| JP2016539324A (en) * | 2013-12-20 | 2016-12-15 | コリア アトミック エナジー リサーチ インスティテュートＫｏｒｅａ Ａｔｏｍｉｃ Ｅｎｅｒｇｙ Ｒｅｓｅａｒｃｈ Ｉｎｓｔｉｔｕｔｅ | Heterogeneous radiation measuring sensor and manufacturing method thereof |
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