JPS5893292A - Manufacture of semiconductor radiation detector - Google Patents
Manufacture of semiconductor radiation detectorInfo
- Publication number
- JPS5893292A JPS5893292A JP56192159A JP19215981A JPS5893292A JP S5893292 A JPS5893292 A JP S5893292A JP 56192159 A JP56192159 A JP 56192159A JP 19215981 A JP19215981 A JP 19215981A JP S5893292 A JPS5893292 A JP S5893292A
- Authority
- JP
- Japan
- Prior art keywords
- radiation detector
- electrode
- manufacturing
- semiconductor radiation
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 230000005855 radiation Effects 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000000853 adhesive Substances 0.000 claims abstract description 7
- 230000001070 adhesive effect Effects 0.000 claims abstract description 7
- 238000001514 detection method Methods 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 4
- 238000007598 dipping method Methods 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004347 surface barrier Methods 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
発明の技術分野
本発明は、１次元あるいは２次元の放射線強度分布を計
測することのできる半導体放射線検出器を製造する方法
に関する。TECHNICAL FIELD OF THE INVENTION The present invention relates to a method for manufacturing a semiconductor radiation detector capable of measuring one-dimensional or two-dimensional radiation intensity distribution.
発明の技術的背景とその問題点
ているが、この検出器は通常次のようにして製造されて
いる。まず、第１図（ａ）に示す如く半導体基板１、信
号電極２およびアース電極３からなる表面障壁型単位検
出素子（Ａｕ −ｎｓ １−Ａ７）４を最初に複数個製
造し、これらの単位検出素子４を同図（ｂ）に示す如く
接着剤５を介してアクリル板６上に接着して製造されて
いる。このようなｆＭ造方法は単位検出素子４０寸法が
数〔傷、〕角の場合には合理法のある方法であるが、放
射線強度分布に対する高空間分解能が要求される場合に
は素子寸法が数（ｔｔｕｎ ）角辺下のものを多数個整
然と配置する必要があり、製造時間および製造コストの
点で極めて不利になる。Technical background of the invention and its problems This detector is usually manufactured as follows. First, as shown in FIG. 1(a), a plurality of surface barrier type unit detection elements (Au-ns 1-A7) 4 each consisting of a semiconductor substrate 1, a signal electrode 2, and a ground electrode 3 are manufactured, and these units are The detection element 4 is manufactured by adhering it onto an acrylic plate 6 via an adhesive 5, as shown in FIG. 5(b). Such an fM construction method is a rational method when the unit detection element 40 has a few [scratches,] corners, but when high spatial resolution for radiation intensity distribution is required, the element has a few dimensions. (ttun) It is necessary to arrange a large number of items under the corner sides in an orderly manner, which is extremely disadvantageous in terms of manufacturing time and manufacturing cost.
発明の目的
本発明の目的は、製造工程が簡単で製造コストの面で有
利な１次元或いは２次元の半導体放射線検出器の製造方
法を提供することにある。OBJECTS OF THE INVENTION An object of the present invention is to provide a method for manufacturing a one-dimensional or two-dimensional semiconductor radiation detector that has a simple manufacturing process and is advantageous in terms of manufacturing cost.
発明の概要
本発明は、単一の半導体基板の表面に信号電極を形成す
ると共に、半導体基板の層面にアース電極を形成したの
ち、アース電極を接着剤を介して固定板に接着し、しか
るのち上記半導体基板および固定板を上記信号（極側か
ら溝切加工するようにした方法である。すなわち、単位
検出素子を独立して個々に製造するのではなく、比較的
大面積の半導体基板に信号電極およびアース電極を配設
してから固定板と接着剤で一体化し、その後信号電極側
からの溝切加圧によって単位検出領域を分離するように
した方法である。Summary of the Invention The present invention involves forming a signal electrode on the surface of a single semiconductor substrate, and forming a ground electrode on the layer surface of the semiconductor substrate, and then bonding the ground electrode to a fixing plate using an adhesive. This is a method in which the semiconductor substrate and the fixing plate are grooved from the above signal (pole side).In other words, instead of manufacturing each unit detection element independently, the signal is formed on a relatively large area of the semiconductor substrate. This is a method in which the electrodes and the ground electrode are arranged and then integrated with the fixing plate using adhesive, and then the unit detection areas are separated by groove cutting and pressure from the signal electrode side.
発明の効果
本発明によれば、単位検出素子を複数個製造したのちこ
れらを固定板に接着する方法に比して、その工程が簡略
化され製造時間の短縮ｆヒをはかり？８る。さらに、素
子方法が数（ｒｔｔｓ ）以下のものを多数個配置する
場合にあっても、比較的短い時間で容易に実現すること
ができる。つまり、放射線強度分布を高空間分解能で計
測できる１次元成いは２次元の半導体放射線検出器を短
時間で、かつ低コストで製造し１尋る等の効果を泰する
。Effects of the Invention According to the present invention, compared to the method of manufacturing a plurality of unit detection elements and then bonding them to a fixed plate, the process is simplified and the manufacturing time is shortened. 8ru. Furthermore, even if a large number of elements (rtts) or less are to be arranged, it can be easily realized in a relatively short time. In other words, a one-dimensional or two-dimensional semiconductor radiation detector capable of measuring radiation intensity distribution with high spatial resolution can be manufactured in a short time and at low cost, thereby achieving effects such as one-dimensional manufacturing.
発明の実施例 以下、本発明の詳細を図示の実施例によって説明する。Examples of the invention Hereinafter, details of the present invention will be explained with reference to illustrated embodiments.
第２図（ａ）〜（ｅｌは本発明の一実施例に係わる半導
体孜射線検出器製造工程を示す断面図である。FIGS. 2A to 2E are cross-sectional views showing the manufacturing process of a semiconductor ray detector according to an embodiment of the present invention.
まず、第Ｖ図（ａ）に示す如く半導体基板（ｎ−８ｉ）
１１の表面に分＾１している信号電極（Ａｕ ） １２
を広庸すると共に、慢面；ニアース電極（Ａ、Ａ）ｚ、
ｙを蒸着する。次に、第Ｖ図（ｂｌ Ｉ”−示す如く半
導体基板１）の裏面側、つまりアース電極１３を導電性
接着剤１４を介して金属性固定板（Ｐｂ）１５に接着す
る。次いで−ＣＯ，レーザ、Ｙ Ａ、 Ｇし検出頭載を
分≠Ｗする。しかるのち、第Ｖ鞠（ｄｌに示す如く信号
電極端子１６およびアース覗極端子１７を取着し、最後
に同図（ｅｌに示す如く溝にコリメータ１８を挿入固定
することによって半導体放射線検出器が形成される。そ
して、この検出器は第２図（ｅ）に示す如く紙面上方向
から入射される放射線の強１髪分布計測に用いられる。First, as shown in Figure V(a), a semiconductor substrate (n-8i)
Signal electrode (Au) 12 distributed on the surface of 11
In addition to being widespread, the arrogance; near-earth electrode (A, A)z,
Deposit y. Next, the back side of the semiconductor substrate 1 as shown in FIG. Laser, Y A, G, and the detection head is set to ≠ W. Then, the signal electrode terminal 16 and the earth observation terminal 17 are attached as shown in the V ball (dl), and finally the A semiconductor radiation detector is formed by inserting and fixing the collimator 18 into the groove as shown in FIG. used.
なおコリメータ１８はＷ板に絶縁被膜をコーティングし
たものである。The collimator 18 is a W plate coated with an insulating film.
このように本実施例方法によれば、空間的に分離された
単位検出領域を有する１次元の半導体放射線検出器を簡
易な工程で容易に製造することができる。このため、半
導体放射線検出器の製造コストの低減化および製造時間
の短縮化をはかり鳴る。As described above, according to the method of this embodiment, a one-dimensional semiconductor radiation detector having spatially separated unit detection areas can be easily manufactured through simple steps. Therefore, it is possible to reduce the manufacturing cost and manufacturing time of the semiconductor radiation detector.
なお、本発明は上述した実施例に限定されるものではな
い。例えば、前記半導体基板としては８ｉの他にＧａＡ
ｓ 、 ＣｄＴｅ 、 Ｇｅ或いはＨｇＩ。Note that the present invention is not limited to the embodiments described above. For example, as the semiconductor substrate, in addition to 8i, GaA
s, CdTe, Ge or HgI.
等を用いることができる。さらに、半導体放射線検出器
の種類としては１表面障壁型に限らずＰＮ型やＰＩＮ型
にも適用することができる。etc. can be used. Furthermore, the type of semiconductor radiation detector is not limited to the one-surface barrier type, but can also be applied to a PN type or PIN type.
できる。この場合、予め単位検出軸域を２次元的に分離
するか、或いは第３図に示す如く１次元検出器２０を複
数個使用すればよい。（放射線の入射方向は紙面に垂直
）その他、本発明の要旨を逸脱しない範囲で、種々変形
して実施することができる。can. In this case, the unit detection axis area may be separated two-dimensionally in advance, or a plurality of one-dimensional detectors 20 may be used as shown in FIG. (The incident direction of the radiation is perpendicular to the plane of the paper.) In addition, various modifications can be made without departing from the gist of the present invention.
第１図（ａ）（ｂ）は従来の半導体放射線検出器製造工
程を示す断面図、第２図（ａｌ〜（ｅｌは本発明の−実
施例方法に係わる半纏体放射脈検出器製造工程を示す断
面図、第３図は変形例を示す…ｆ面図である。
１１・・・半導体基板（ｎ−８ｉ）、１２・・・信号膚
働（Ａ、 ｕ ）、１３−・・アース’ａｔ極（Ａり、
１４・・・搏濱性接盾剤、１５・・・固定板（Ｐｂ）、
１６・・・イぎ号゛ゼ極端子、１７・・・アース虐極端
子、１８・・・コリメータ、２０・・・単位検出器。
出願人代理人 弁理士 鈴 江 武 彦４３９−FIGS. 1(a) and 1(b) are cross-sectional views showing the manufacturing process of a conventional semiconductor radiation detector, and FIGS. The cross-sectional view shown in FIG. at pole (Ari,
14... oxidative shielding agent, 15... fixing plate (Pb),
16...Ignition pole terminal, 17...Earth polarity terminal, 18...Collimator, 20...Unit detector. Applicant's agent Patent attorney Takehiko Suzue 439-
Claims (4)
或いは２次元の放射線強度分布の計測に供される半導体
放射線検出器をｉｌ！！！漬するに際し、単一の半導体
基板の表面に信号電極を形成する工程と、上記半導体基
板の裏面にアース電極を形成する工程と、上記アース電
極を接着剤を介して固定板に接着する工程と、前記半導
体基板および固定板を前記信号電極（ＩＩｌｌから溝切
加工する工程とを具備したことを特徴とする半導体放射
線検出器の製造方法。(1) A semiconductor radiation detector that has spatially separated unit detection areas and is used for measuring one-dimensional or two-dimensional radiation intensity distribution. ! ! When dipping, the steps of forming a signal electrode on the front surface of a single semiconductor substrate, forming a ground electrode on the back surface of the semiconductor substrate, and bonding the ground electrode to a fixing plate using an adhesive are performed. A method for manufacturing a semiconductor radiation detector, comprising the steps of: grooving the semiconductor substrate and the fixing plate from the signal electrode (IIll).
じめ分離されている信号電極を形成することである特許
請求の範囲第１項記載の半導体放射線検出器の製造方法
。(2) The method for manufacturing a semiconductor radiation detector according to claim 1, wherein the step of forming the signal electrode is to form signal electrodes that are spatially separated in advance.
として、導電性接着剤を用いたことを特徴とする特許請
求の範囲第１項記載の半導体放射線検出器の製造方法。(3) A method for manufacturing a semiconductor radiation detector according to claim 1, characterized in that a conductive adhesive is used as the adhesive for attaching the fixing plate to the ground electrode side.
性固定板を用いたことを特徴とする特許請求の範囲第１
項記載の半導体放射線検出器の製造方法。(4) Claim 1, characterized in that a metallic fixing plate is used as the fixing plate adhered to the ground electrode side.
A method for manufacturing a semiconductor radiation detector according to section 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56192159A JPS5893292A (en) | 1981-11-30 | 1981-11-30 | Manufacture of semiconductor radiation detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56192159A JPS5893292A (en) | 1981-11-30 | 1981-11-30 | Manufacture of semiconductor radiation detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5893292A true JPS5893292A (en) | 1983-06-02 |
Family
ID=16286670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56192159A Pending JPS5893292A (en) | 1981-11-30 | 1981-11-30 | Manufacture of semiconductor radiation detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5893292A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60124879A (en) * | 1983-12-08 | 1985-07-03 | Yokogawa Hokushin Electric Corp | Multichannel type radiation detector and manufacture thereof |
| JPH02260466A (en) * | 1989-03-30 | 1990-10-23 | Matsushita Electric Ind Co Ltd | Semiconductor radiation detector |
| US8044476B2 (en) | 2003-12-16 | 2011-10-25 | National University Corporation Shizuoka University | Wide range radiation detector and manufacturing method |
| JP2022105985A (en) * | 2021-01-05 | 2022-07-15 | ジーイー・プレシジョン・ヘルスケア・エルエルシー | System and method for mitigating metal particle leakage from additive three-dimensional printed part |
-
1981
- 1981-11-30 JP JP56192159A patent/JPS5893292A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60124879A (en) * | 1983-12-08 | 1985-07-03 | Yokogawa Hokushin Electric Corp | Multichannel type radiation detector and manufacture thereof |
| JPH02260466A (en) * | 1989-03-30 | 1990-10-23 | Matsushita Electric Ind Co Ltd | Semiconductor radiation detector |
| US8044476B2 (en) | 2003-12-16 | 2011-10-25 | National University Corporation Shizuoka University | Wide range radiation detector and manufacturing method |
| JP2022105985A (en) * | 2021-01-05 | 2022-07-15 | ジーイー・プレシジョン・ヘルスケア・エルエルシー | System and method for mitigating metal particle leakage from additive three-dimensional printed part |
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