JPH0225844U - - Google Patents
Info
- Publication number
- JPH0225844U JPH0225844U JP10522688U JP10522688U JPH0225844U JP H0225844 U JPH0225844 U JP H0225844U JP 10522688 U JP10522688 U JP 10522688U JP 10522688 U JP10522688 U JP 10522688U JP H0225844 U JPH0225844 U JP H0225844U
- Authority
- JP
- Japan
- Prior art keywords
- shear type
- type gauge
- voltage
- pressure signal
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000003321 amplification Effects 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
Description
第１図は本考案の１実施例を示す全体構成図、
第２図は第１図に示す実施例の一部の構成を変更
した部分構成図、第３図は従来の半導体圧力変換
器のうちの圧力センサ部分の構成を示す構成図、
第４図は従来の半導体圧力変換器の全体構成を示
す構成図である。
１…ダイヤフラム、３…起歪部、８…剪断形ゲ
ージ、９，１０…電源端、１１，１２…出力端、
１４…変換部、Ｑ１，Ｑ２…増幅器、Ｄ１…ダイ
オード、Ｖｓ′，Ｖｓ…出力電圧、Ｖｐ，Ｖｐ′
…圧力信号。
FIG. 1 is an overall configuration diagram showing one embodiment of the present invention;
FIG. 2 is a partial configuration diagram showing a partial configuration of the embodiment shown in FIG. 1, and FIG. 3 is a configuration diagram showing the configuration of a pressure sensor portion of a conventional semiconductor pressure transducer.
FIG. 4 is a block diagram showing the overall structure of a conventional semiconductor pressure transducer. DESCRIPTION OF SYMBOLS 1... Diaphragm, 3... Strain generating part, 8... Shear type gauge, 9, 10... Power supply end, 11, 12... Output end,
14...Conversion unit, Q1 , Q2 ...Amplifier, D1 ...Diode, Vs ' , Vs ...Output voltage, Vp , Vp '
...pressure signal.
Claims (1)
歪部に形成された剪断形ゲージと、この剪断形ゲ
ージの電源端に直列に接続されたダイオードと、
この剪断形ゲージとダイオードの直列回路に所定
電圧を印加する電圧源と、この剪断形ゲージの出
力電圧を増幅して圧力信号を出力する増幅手段と
を有し、この圧力信号が温度により変化しないよ
うに前記所定電圧が選定されたことを特徴とする
半導体圧力変換器。 a shear type gauge formed on a strain-generating portion of a semiconductor diaphragm to which measurement pressure is applied; a diode connected in series to a power source end of the shear type gauge;
It has a voltage source that applies a predetermined voltage to a series circuit of this shear type gauge and a diode, and an amplification means that amplifies the output voltage of this shear type gauge and outputs a pressure signal, and this pressure signal does not change due to temperature. A semiconductor pressure transducer characterized in that the predetermined voltage is selected as follows.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10522688U JPH0225844U (en) | 1988-08-09 | 1988-08-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10522688U JPH0225844U (en) | 1988-08-09 | 1988-08-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0225844U true JPH0225844U (en) | 1990-02-20 |
Family
ID=31337648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10522688U Pending JPH0225844U (en) | 1988-08-09 | 1988-08-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0225844U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5240184A (en) * | 1975-09-25 | 1977-03-28 | Automob Antipollut & Saf Res Center | Temperature compensation circuit for pressure transducers |
-
1988
- 1988-08-09 JP JP10522688U patent/JPH0225844U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5240184A (en) * | 1975-09-25 | 1977-03-28 | Automob Antipollut & Saf Res Center | Temperature compensation circuit for pressure transducers |