JPH02257625A - Surface treatment apparatus - Google Patents

Abstract

PURPOSE:To stably form a thin film even under a low pressure and to execute an etching operation whose direction property is good by a method wherein in electron beam is supplied continuously into a space where a magnetic field and an electric field cross at right angles. CONSTITUTION:The following are arranged and installed: a target plate 3 which has been attached to a first electrode 2 at the upper-end inside of a vacuum container 1; a second electrode 4 which is arranged so as to be faced and which is also used as a substrate-support base. Electric power of a high-frequency power supply 5 is applied between them via a matching circuit 6. An electric discharge is caused, by using an electron supply means 15, inside a space where a generated electric field and a magnetic field generated by a magnet 7 which has been arranged and installed at an outside face of the vacuum container 1 cross at right angles. Ions in a plasma generated in this manner are made to collide with the target plate 3; sputtering particles from the target are introduced perpendicularly into a substrate 8 to be treated on the second electrode 4. Thereby, it is possible to maintain a stable electric discharge even under a low pressure; it is possible to stably form a thin film and to execute an etching operation whose direction property is extremely good.

Description

[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention relates to a surface treatment apparatus, and particularly to a surface treatment apparatus used for forming a thin film by vapor phase growth method, etching the thin film, etc. Regarding.

(Conventional technology) Usually, metal films such as aluminum, titanium, etc. - Sputtering is one method for forming alloy films such as Ride, molybdenum silicide, and insulating films such as silicon oxide and alumina.

In this sputtering method, a target is exposed to plasma of an inert gas such as argon, and a thin film is formed on a wafer placed opposite the target by ion bombardment.

It has been found that with this method, by lowering the gas pressure, it is possible to suppress deterioration in film quality due to the intrusion of impurities. Therefore, magnetron discharge is usually used to create plasma with high electron density even under low pressure, in order to improve film quality without reducing the deposition rate.

However, even with magnetron discharge, high electron density can only be obtained at pressures in the order of 10 Torr, and at lower gas pressures the discharge becomes unstable, making it difficult to use this deposited film for wiring, etc. if you did this,
This can lead to high resistance values and long-term reliability problems.

Further, in the case of an insulating film, problems such as a decrease in insulation resistance and the occurrence of cracks may occur. It was virtually impossible to use it under such low gas pressure.

On the other hand, in the field of etching, etching under low pressure is used to perform etching with good directionality (Sekine et al., 8th Dry Process Symposium Proceedings P, 42, 1986 Institute of Electrical Engineers of Japan). In the case of etching, by lowering the pressure, the probability of scattering of etching species ions with neutral species before reaching the substrate is reduced, making it possible to perform etching with good directionality. Therefore, the shape of the etched cross section becomes vertical, and so-called pattern dependence, in which the etching rate changes depending on the width of the pattern, is also reduced. Furthermore, even when using materials such as aluminum or phosphorus-doped n-polycrystalline silicon, which have good reactivity with neutral active species, lateral etching by neutral active species is suppressed and highly accurate etching is possible. becomes. However, even in the case of etching, stable discharge is possible only up to a pressure range of 10 Torr, and 10
It cannot be used below Torr. This pressure can be lowered by an order of magnitude by using electron cyclotron resonance plasma, but it is not sufficient.

(Problems to be Solved by the Invention) As described above, although it is known that it is possible to form a highly pure thin film under low pressure, there is a limitation due to the inability to maintain good discharge under low pressure.

Furthermore, in etching, plasma formation under even lower pressure has been desired in order to perform directional etching well.

The present invention has been made in view of the above-mentioned circumstances, and an object of the present invention is to form a highly pure and homogeneous deposited film.

Another object of the present invention is to provide an etching method with good directionality.

[Structure of the Invention] (Means for Solving the Problems) Therefore, in the present invention, a magnetic field is generated in a vacuum container set at 10 Torr or less, and an electric field is applied in a direction perpendicular to this magnetic field. An electron beam is continuously supplied in a space perpendicular to the electric field.

(Function) According to the above configuration, since the electron beam is continuously supplied in the space where the magnetic field and the electric field are perpendicular to each other, stable discharge can be maintained even under low pressure.
Stable thin film formation and etching with extremely good directionality can be performed.

(Example) Hereinafter, examples of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a diagram showing a deposition apparatus used in a thin film forming method according to an embodiment of the present invention.

This deposition apparatus has a first electrode 2 on the inner wall of the upper end of a vacuum container 1.
A target plate 3 mounted on the target plate 3 and a second electrode 4 which is placed opposite to the target plate 3 and also serves as a substrate support are arranged 7, and the electric power generated by the high frequency power source 5 is connected to the target plate through a matching circuit 6. 3 and the second electrode 4, and the electric field formed thereby is orthogonal to the magnetic field formed by the magnet 7 disposed on the outer surface of the vacuum container 1. supplying electrons from means 15;
The method is characterized in that plasma is formed by electric discharge, ions in the plasma are made to collide with the target plate 3, and sputtered particles from the target are guided vertically onto the substrate to be processed 8 on the second electrode 4. It is something.

This magnet 7 consists of a circular north pole placed at the center and a south pole placed concentrically around the north pole, and the gap between the two magnetic poles forms a ring, forming a closed loop. The structure is such that magnetron discharge is maintained by the action of EXB caused by this magnetic field. The electrons in the plasma formed by this magnetron discharge drift, increasing ionization efficiency, and high-density plasma can be generated even under relatively low pressure conditions.

Further, a liquid 10 is passed through the second electrode 4 as a substrate support through a supply pipe 9 to control the substrate temperature.

Further, the inner wall of the vacuum container is configured to be insulated and isolated from the lower part via an insulator 11 disposed near the first electrode 2. 12 is a supply system for introducing reaction gas, 13
is the exhaust system.

Furthermore, the electron supply means 15 includes a plasma generation space 18 having third and fourth electrodes 16.17, an argon gas supply system 19 that supplies argon gas into this plasma generation space 18, and an argon gas supply system 19 that supplies argon gas into the plasma generation space 18. Fourth electrode 16.1
It is formed from a high-frequency power supply 20 for applying high-frequency power between 7 and 7, extraction electrodes 21 and 22, and a vacuum exhaust system 23, and extracts only electrons 24 from the plasma generated in the plasma generation space 18. , which is supplied into the vacuum container 1.

Further, the substrate to be processed is taken in and out of the vacuum container by a load lock mechanism (not shown) and a transport mechanism (not shown).

Next, a method of actually forming a deposited film using this apparatus will be explained.

First, as shown in FIG. 2(a), a silicon substrate 39 whose surface is uneven due to a pattern 40 formed on the surface.
The substrate to be processed is transferred onto the second electrode 4 of the vacuum container 1 using a load-lock mechanism and a transfer mechanism, and fixed by an electrostatic chuck (not shown) to reach a desired temperature. Control.

After the inside of the vacuum container 1- is evacuated by the exhaust system 13, argon gas is introduced from the supply system 12 to a pressure of about 1 Q Torr, and the target plate 3 (first electrode 2) and the second electrode High frequency power is applied between the With this alone, no plasma will be formed even if a high voltage spark is generated to start the discharge. Therefore, the electron supply means 15 supplies a large amount of electrons to the discharge space.

Here, in the electron supply means 15, high frequency power is applied between the third and fourth electrodes 16 and 17 by the high frequency power supply 20, and a pressure 10 is supplied from the argon gas supply system 19 into the plasma generation space 18. Plasma 25 is formed by discharging argon gas at a pressure of several Torr. Electrons in this plasma are extracted by the potential difference between the extraction electrode 22 and the fourth electrode 17. Additionally, a vacuum exhaust system 2 is provided between the plasma generation space 18 and the vacuum vessel 1.
3 performs differential pumping, and only the electron beam 24 is supplied into the vacuum vessel 1- without argon or other impurity gases entering the low-pressure vacuum vessel 1. The acceleration energy of the electron beam at this time is enough to efficiently ionize the gas used in the process.
A value of about 00 eV is good; if the energy is too high, it will penetrate through the discharge space, which will actually reduce the effect.

At this time, if the gas pressure is very low or the electron supply is small, the magnetic field confines the electrons in a region corresponding to the closed loop described above. As a result, the lifetime is extended, the distance traveled by electrons becomes longer, the frequency of collisions with molecules and atoms increases, the ionization efficiency increases, and high-density plasma is formed even under low gas pressure.

A cathode drop voltage Vde is generated on the surface of the target plate 3, argon ions in the plasma are irradiated onto the surface of the target plate 3, and the target plate material, that is, the deposited material is released into the plasma by sputtering action.

In this way, when the deposited species are released into the plasma, they are first charged by the plasma and become charged particles.

These charged particles diffuse and move according to the potential gradient in the plasma, but due to the magnetic field formed by the magnet 7, they move perpendicularly onto the substrate to be processed 8 on the second electrode 4, and further It is accelerated by the bias voltage generated by the high frequency power applied to the processing substrate, and the directionality increases by a negative step. The deposited species 42, which are guided as charged particles from a direction perpendicular to the substrate to be processed, are deposited on the second substrate.
As shown in Figure (b), the particles are efficiently guided to the bottom of the grooves on the surface of the substrate 39 to be processed, and are deposited to reflect the surface irregularities j7 well.

After filling the grooves as shown in FIG. 2(e) in this manner, a resist R is applied to the entire surface of the substrate to flatten the surface, as shown in FIG. 2(d).

Thereafter, as shown in FIG. 2(0), the trench can be completely filled by etching back by reactive ion etching.

In this way, it is possible to form a buried layer 41 with good film quality even in a minute groove.

Furthermore, high-density plasma can be generated even under a relatively low pressure condition of about 10 Torr, and impurities incorporated into the film are extremely reduced, improving film quality. Furthermore, the deposition rate can be increased, and the mean free path of the particles becomes longer under low pressure, which is advantageous for increasing the directionality when transporting the deposited species.

In this example, the target material was sputtered continuously using argon ions, but at first,
The substrate to be deposited is protected by a method such as covering it with a shutter, and the target material is sputtered with argon ions only at the beginning. When the release of aluminum ions begins, the supply of argon gas is stopped and the target material is sputtered with the aluminum ions themselves. Sputtering may be continued, and when there is no argon gas in the container and only aluminum remains, the shutter may be removed to expose the substrate to be deposited, and the deposition of the aluminum thin film may be started. In this way, since the ions used to sputter the target material are also aluminum ions, it is possible to prevent impurities from entering the deposited thin film and to form a pure thin film.

Next, an etching apparatus will be described as a second embodiment of the present invention.

As shown in FIG. 3, this etching apparatus is an ordinary magnetron etching apparatus provided with electron generating means 115.

That is, this etching apparatus is provided with a first electrode 102 attached to the inner wall of the upper end of a vacuum container 101, and a second electrode 104 that is placed opposite to the first electrode 102 and also serves as a substrate support. Power generated by the high frequency power source 105 is applied between the first electrode 102 and the second electrode 104 via the matching circuit 106, and the electric field formed thereby and the electric field provided on the outer surface of the vacuum container 101 are Magnet】
Electrons are supplied from an electron generating means 115 consisting of an electron gun into a space orthogonal to the magnetic field formed by the 07, and plasma is formed by discharge, and the plasma is perpendicularly placed on the substrate to be processed 108 on the second electrode 104. It is characterized by being designed to guide the user.

Similar to the first embodiment, this magnet 1-07 consists of a circular N pole placed at the center and an S pole placed concentrically around the N pole, between the two magnetic poles. The gap is shaped like a ring to form a closed loop, and is configured to maintain magnetron discharge by the action of EXB due to this magnetic field. Electrons in the plasma drift, increasing ionization efficiency, and high-density plasma can be generated even under relatively low pressure conditions.

Furthermore, a liquid 110 is passed through the second electrode 104 as a substrate support through a supply pipe 109 to control the substrate temperature.

Further, the inner wall of the vacuum container is configured to be insulated and isolated from the lower part via an insulator 111 disposed near the first electrode 102. 112 is a supply system for introducing reaction gas, and 113 is an exhaust system.

Further, the substrate to be processed is taken in and out of the vacuum container by a load lock mechanism (not shown) and a transport mechanism (not shown).

Next, a case will be described in which this apparatus is used to actually perform etching, for example, when forming a resist pattern for patterning a thin film 5 formed on a semiconductor substrate.

First, as shown in FIG. 4(a), a three-layer structure is formed in which a first resist film 52a, an SOG film 52b, and a second resist film 52c are sequentially laminated on a thin film 51 formed on a semiconductor substrate. A resist film 52 is formed.

Subsequently, as shown in FIG. 4(b), the pattern is transferred onto the second resist film 52c by exposure through a desired photomask, and after development, it is installed in the etching apparatus shown in FIG. Then, using this second resist film 52c as a mask, S
The OG film 52b is etched.

After this, as shown in FIG. 4(e), this SOG film 52
Using b as a mask, the thick first resist film 52a is
Etching is performed using oxygen plasma under relatively low pressure conditions of about Torr to form a resist pattern. Since the etching is performed under pressure conditions as low as 10 Torrfu degrees, the directionality is extremely good and the dimensional accuracy is greatly improved. For comparison,
FIG. 5 shows the etching results when conventional etching was performed in a pressure range of about 10 Torr. this·
As is clear from the comparison, compared to the conventional example, which had large side etch and extremely poor dimensional accuracy.
According to the method of the present invention, dimensional accuracy is significantly improved.

In this way, processing with no dimensional conversion difference can be realized. Furthermore, since the electron density can be maintained extremely high even at low pressure, the energy of the ions can be kept low, making it possible to reduce damage.

Curve a in FIG. 6 shows the relationship between electron density and gas pressure when etching is performed using this etching apparatus.

Curves C and C respectively show the relationship between electron density and gas pressure when a conventional magnetron etching device and a glow discharge plasma etching device that does not use a magnetic field are used for comparison.

As is clear from this figure, in a plasma etching apparatus using glow discharge without using a magnetic field, the electron density decreases as the gas pressure decreases, and the discharge cannot be maintained at about 10@-3 Torr.

In addition, in the case of a conventional magnetron etching device, 10
Although it is possible to maintain discharge up to approximately 10 Torr, the electron density drops significantly and it becomes difficult to maintain stable discharge when it reaches about 10 Torr. On the other hand, according to the device of the embodiment of the present invention, stable discharge can be maintained even if the gas pressure is lowered, and the 10 To
A high electron density can be maintained even at a gas pressure of about rr.

From these comparisons, according to the method of the present invention, it is possible to carry out a process similar to the conventional method at a pressure that is two or more orders of magnitude lower than that of the conventional method.

In the second embodiment, an etching apparatus using magnetron discharge has been described, but the present invention is not limited to this, and can be applied to cases where other apparatuses such as an etching apparatus using electron cyclotron resonance are used. Note that in plasma caused by electron cyclotron resonance, a decrease in electron density occurs, but stable discharge is possible even at a gas pressure of about 1 QTorr.

Next, as a third embodiment of the present invention, an example in which the present invention is applied to a plasma processing apparatus using electron cyclotron resonance (hereinafter referred to as an ECR plasma processing apparatus) will be described.

As shown in FIG. 7, this apparatus includes a reaction chamber 200 consisting of a vacuum container, and an EC
It is composed of a discharge chamber 201 for generating R discharge, and an electron generation chamber 202 for supplying an electron beam to the discharge chamber.

This discharge chamber 201 is provided with a waveguide 203 for introducing microwaves of, for example, 2.45 G[lz] and a first introduction port 204 for introducing reactive gas such as oxygen. . Further, a water cooling mechanism 205 for water cooling the outer wall is disposed in this discharge chamber, and a magnetic coil 206 is disposed outside this water cooling mechanism 205. A magnetic field is applied within the discharge chamber, and high-density plasma is generated by cyclotron movement of electrons in the microwave discharge generated within the discharge chamber.

On the other hand, inside the reaction chamber 200, there is an electrode 2 as a sample holder.
07 is disposed, and the substrate to be processed is placed thereon. Further, a high frequency power source 209 for applying high frequency power for bias is connected to this electrode 207 via a matching circuit 208, so that a self-bias of about minus several tens to minus 200 volts is generated.

210 is a cooling pipe for cooling the substrate to be processed via the electrode 207. 211 is a vacuum evacuation device.

Even in such an ECR plasma processing apparatus, electrons are generated in a space where the electric field formed by microwaves (because it is an electromagnetic wave, the direction becomes opposite to that shown in the figure over time) and the magnetic field formed by the external magnetic coil 206 are orthogonal to each other. By sending an electron beam from the chamber 202, stable thin film formation or surface treatment such as etching becomes possible in a low pressure region where the discharge becomes dilute.

In this example, the electron beam is supplied coaxially with the microwave, but it may also be supplied from the lateral direction (such as from the gap between the coils 206).

Next, a fourth embodiment of the present invention will be described.

FIGS. 8(a) and 8(b) are diagrams showing a surface treatment apparatus according to a fourth embodiment of the present invention. FIG. 8(b) shows
FIG. 8(a) is a detailed partial cross-sectional view of FIG. 8(a);

This device includes a reaction chamber 300 consisting of a vacuum container, a discharge chamber 301 disposed above the reaction chamber 300 for generating magnetron discharge, and an electron generation chamber 302 for continuously supplying an electron beam to the discharge chamber. It is composed of.

An electrode 307 serving as a sample holder is disposed within the reaction chamber 300, and a substrate to be processed is placed on the electrode 307. Further, a power source 308 for applying direct current or alternating current power for bias is connected to this electrode 307, so that a self-bias occurs. 310 is
This is a cooling mechanism for cooling the substrate to be processed via the electrode 307. 311 is a vacuum evacuation device.

This discharge chamber 301 includes a cylindrical electrode 303 formed as an outer wall of a container, and a rod-shaped electrode 30 disposed inside the cylindrical electrode 303.
4, a power source 305 that applies DC or AC power between these picture electrodes, and a magnetic coil 306 disposed outside to generate a magnetic field. The electric field formed nearby is formed such that a region perpendicular to the magnetic field formed by the magnetic coil 306 forms a closed loop along the vicinity of the surface of the electrode 303 .

Here, when an electron beam is supplied from the electron generation chamber 302 to the region where the electric field and the magnetic field are perpendicular to each other, it travels along the region where the electric field and the magnetic field are perpendicular to each other while drawing a locus of cycloidal motion. The electron beam continues to rotate within the region, and as a result, the distance the electrons travel is greatly increased compared to an electron beam simply injected into a space where a magnetic or electric field exists (without being perpendicular to each other). Therefore, it becomes possible to significantly increase the efficiency with which electrons collide with gas molecules and atoms and are ionized. In such a device, even without injecting an electron beam, 2, which is generated when electrons collide with gas molecules or atoms,
If there are enough secondary electrons, the electrons form a loop of cycloid motion - collision with molecules and atoms - ionization - generation of secondary electrons, and ionization progresses one after another, maintaining a high-density discharge. (magnetron discharge) However, with this device, the gas pressure can be reduced to 10” Torr.
If the collision frequency with gas molecules and atoms decreases, the plasma becomes diluted and it becomes difficult to maintain magnetron discharge. This is prevented by continuously supplying electrons into the discharge chamber, making it possible to maintain high-density discharge even under low pressure.

For example, in this device, by introducing a reactive gas containing halogen into the discharge chamber, ions of reactive atoms and molecules are formed in the plasma described above, and these ions are transferred to the electrode 3.
Pulled in by a bias electric field due to the power applied on 07,
A substrate to be processed can be etched.

It is also possible to perform etching or deposition without using a bias electric field and by utilizing a reaction with neutral active species generated in a discharge section.

This apparatus also enables high-quality, high-precision film formation and etching by reducing the impurity concentration under extremely low pressure.

Further, as a fifth embodiment of the present invention, instead of using the cylindrical electrode and the rod-shaped electrode in the fourth embodiment, as shown in FIG.
The present invention can also be applied to an inductively coupled plasma processing apparatus in which RF plasma is generated by applying RF power to 3.

Here, 402 is an electron generation chamber, and 400 is a reaction chamber.

An electrode 407 serving as a sample holder is disposed within the reaction chamber 400, and a substrate to be processed is placed on the electrode 407. Further, a power source 408 for applying direct current or alternating current power for bias is connected to this electrode 407, so that a self-bias occurs. And R
Electrons are continuously supplied from the electron generation chamber 402 to a region where the RF electric field generated by the F coil 403 and the magnetic field generated by the magnetic coil 406 installed outside the F coil are perpendicular to each other, even in a low pressure region. Good discharge can be maintained.

Note that the present invention is not limited to the above-mentioned embodiments, but can be applied to various devices. For example, in an apparatus using magnetron discharge, not only the structure of the above embodiment but also a structure having double or triple closed loops may be used.

Further, the electron supply means may form a high-density plasma using various discharges such as a hollow cathode, ECR, and arc at a gas pressure of about 10 Torr, and extract and supply only electrons by differential pumping. When electrons are generated by gas discharge in this manner, it is desirable to provide a differential pumping system to prevent ions and neutral particles from entering the reaction chamber.

Although the first embodiment described the formation of an aluminum thin film, the present invention can be applied not only to aluminum thin films but also to the formation and etching of various thin films such as high melting point thin films such as tungsten and molybdenum, and insulating films such as silicon oxide films. It is possible.

In addition, the structure and materials of the device are not limited to the embodiments, and can be modified as appropriate without departing from the gist of the present invention.

[Effects of the Invention] As explained above, according to the present invention, a magnetic field is generated in a vacuum container, an electric field is applied in a direction perpendicular to the magnetic field, and a space where the magnetic field and the electric field are orthogonal is generated. Since the electron beam is continuously supplied, stable thin film formation and etching with extremely good directionality can be performed even under low pressure.

[Brief explanation of drawings]

FIG. 1 is a diagram showing a vapor phase growth apparatus used in a thin film forming method according to an embodiment of the present invention, and FIGS. 2(a) to 2(e) are
FIG. 3 is a diagram showing an etching device according to a second embodiment of the present invention, and FIGS. 4(a) to 4(C) are diagrams showing an aluminum film forming process using the above apparatus. FIG. 5 is a diagram showing the etching process of the resist film used. FIG. 5 is a diagram showing a resist pattern formed by a conventional method. FIG. 6 is an etching apparatus according to the second embodiment of the present invention, and a conventional magnetron etching apparatus. FIG. 7 is a comparative diagram showing the relationship between electron density and gas pressure when using a plasma etching apparatus using glow discharge without using a magnetic field. FIG. 8 is a diagram showing a processing device according to a fourth embodiment of the present invention, and FIG. 9 is a diagram showing a processing device according to a fifth embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Vacuum container, 2... First electrode, 3... Target plate, 4... Second electrode, 5... High frequency power supply,
6... Matching circuit, 7... Magnet, 8... Substrate to be processed, 9... Supply pipe, 10... Liquid, 11...
Insulator, 12... Supply system, 13... Exhaust system, 15.
...Electron supply means, 16...Third electrode, 17...
Fourth electrode, 18... plasma generation space, 19...
Argon gas supply system, 20...high frequency power supply, 21.2
2... Extraction electrode, 23... Vacuum exhaust system, 24.
...Electronic, 101... Vacuum container, 102... First electrode, 104... Second electrode, 105... High frequency power supply, 106... Matching circuit, 107... Magnet,
1-08... Substrate to be processed, 115... Electron generating means, 51... Thin film, 52a... First resist film, 5
2b... SOG film, 52c... second resist film,
200...Reaction chamber, 201...Discharge chamber, 202...
・Electron generation chamber, 203... waveguide, 204... first
205... Water cooling mechanism, 206... Magnetic coil, 207... Electrode, 208... Matching circuit, 209... High frequency power supply, 210... Cooling pipe, 21
1-... Vacuum exhaust device, 300... Reaction chamber, 301
...Discharge chamber, 302...Electron generation chamber, 303...
Cylindrical electrode, 304... Rod-shaped electrode, 305... Power source, 306... Magnetic coil, 307... Electrode, 30
8... Power source, 310... Cooling mechanism, 311... Vacuum exhaust device, 400... Reaction chamber, 402... Electron generation chamber, 403... RF coil, 406... Magnetic coil, 407... Electrode, 408... Power supply. Figure 1 (b) Figure 2 (T of 1) Figure 3 (C) Figure 2 (Zono 2) Figure 4 Figure 5 Force 1 S Pressure (Torr) Figure 8

Claims (7)

[Claims] (1) A vacuum container, an electrode disposed in the vacuum container on which a substrate to be processed is placed, a magnetic field generating means for generating a magnetic field in the vacuum container, and a gas supply for introducing gas into the vacuum container. means, evacuation means for maintaining the inside of the vacuum container at a low pressure of 10 Torr or less; electric field generating means for generating an electric field perpendicular to the magnetic field; and evacuation means for generating an electric field perpendicular to the magnetic field; 1. A surface treatment apparatus comprising: means for supplying an electron beam continuously. (2) The electron beam supply means is means for supplying electrons into the space by selectively extracting only electrons from a plasma formed in a second vacuum vessel connected to the vacuum vessel. Claim (1) characterized by
The surface treatment device described. (3) The electric field is formed by applying alternating current or direct current power between the electrode and the inner wall of the vacuum container or a second electrode disposed opposite to the electrode. (1) The surface treatment device described. (4) The surface treatment apparatus according to claim (1), wherein the electric field is formed by introducing electromagnetic waves into the vacuum container. (5) The surface treatment apparatus according to claim 1, wherein the space where the electric field and the magnetic field are orthogonal constitutes a closed loop. (6) Claim (1) characterized in that the substrate to be processed is installed outside a region where the electric field and the magnetic field are perpendicular to each other.
) surface treatment device described. (7) A second electrode for placing a target made of a thin film forming material is disposed in the vacuum container, and is configured to deposit a thin film on the surface of the substrate to be processed by sputtering the target. The surface treatment apparatus according to claim 1, characterized in that: