JPH0225197Y2 - - Google Patents
Info
- Publication number
- JPH0225197Y2 JPH0225197Y2 JP15164983U JP15164983U JPH0225197Y2 JP H0225197 Y2 JPH0225197 Y2 JP H0225197Y2 JP 15164983 U JP15164983 U JP 15164983U JP 15164983 U JP15164983 U JP 15164983U JP H0225197 Y2 JPH0225197 Y2 JP H0225197Y2
- Authority
- JP
- Japan
- Prior art keywords
- ion
- plate
- ion implantation
- electrode plate
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005468 ion implantation Methods 0.000 claims description 24
- 230000002285 radioactive effect Effects 0.000 claims description 13
- 230000001133 acceleration Effects 0.000 claims description 10
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 230000003100 immobilizing effect Effects 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 29
- 239000007789 gas Substances 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000002901 radioactive waste Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012958 reprocessing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004992 fission Effects 0.000 description 1
- 239000010795 gaseous waste Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000003758 nuclear fuel Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000012857 radioactive material Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002915 spent fuel radioactive waste Substances 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15164983U JPS6059998U (ja) | 1983-09-30 | 1983-09-30 | 放射性ガスの固定化処分装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15164983U JPS6059998U (ja) | 1983-09-30 | 1983-09-30 | 放射性ガスの固定化処分装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6059998U JPS6059998U (ja) | 1985-04-25 |
| JPH0225197Y2 true JPH0225197Y2 (enrdf_load_stackoverflow) | 1990-07-11 |
Family
ID=30335995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15164983U Granted JPS6059998U (ja) | 1983-09-30 | 1983-09-30 | 放射性ガスの固定化処分装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6059998U (enrdf_load_stackoverflow) |
-
1983
- 1983-09-30 JP JP15164983U patent/JPS6059998U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6059998U (ja) | 1985-04-25 |
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