JPH02236506A - Optical waveguide device - Google Patents
Optical waveguide deviceInfo
- Publication number
- JPH02236506A JPH02236506A JP26578588A JP26578588A JPH02236506A JP H02236506 A JPH02236506 A JP H02236506A JP 26578588 A JP26578588 A JP 26578588A JP 26578588 A JP26578588 A JP 26578588A JP H02236506 A JPH02236506 A JP H02236506A
- Authority
- JP
- Japan
- Prior art keywords
- optical waveguide
- refractive index
- amorphous
- substrate
- atomic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 17
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052719 titanium Inorganic materials 0.000 abstract description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract 2
- 239000010936 titanium Substances 0.000 description 22
- 239000010408 film Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 150000004770 chalcogenides Chemical class 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- SNOJPWLNAMAYSX-UHFFFAOYSA-N 2-methylpropan-1-ol;titanium Chemical compound [Ti].CC(C)CO.CC(C)CO.CC(C)CO.CC(C)CO SNOJPWLNAMAYSX-UHFFFAOYSA-N 0.000 description 1
- 229910019704 Nb2O Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光通信，光集積回路等における光導波路装置
に係わる。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical waveguide device for optical communications, optical integrated circuits, and the like.
（発明の概要〕
本発明は、基板上にＴａ．Ｏ，にＴｉｌ２がドープされ
たアモルファス導波路を形成した光導波路装置であって
、光導波を高効率をもって行うことができるようにする
。(Summary of the Invention) The present invention is an optical waveguide device in which an amorphous waveguide in which Ta.
光通信，光集積回路等における光導波路は、導波光を強
く閉じ込めることができるようにできるだけ高屈折率の
光導波材料によって構成されることが望まれる。Optical waveguides in optical communications, optical integrated circuits, etc. are desired to be constructed of optical waveguide materials with as high a refractive index as possible so that guided light can be strongly confined.
従来、低損失導波路としては、ＴａｔＯｓ＋ Ｎｂ２Ｏ
５などのアモルファス膜， ＰＬＺＴ （Ｐｂ＋ Ｌｉ
， Ｚｒ， Ｔｉの複合酸化物）の単結晶膜， Ａｓ．
Ｓ，などのカルコゲナイドが高屈折率導波路として用い
られて来た。これら各材料の屈折率は、Ｔａ，Ｏ，で１
．９ 〜２．２ ． ＮｂｚＯｓで２．１〜２．３ ，
ＰＬＺＴで２．６程度，カルコゲナイド系では、２．
３より大なる高屈折率を有する。しかしながら、ＰＬＺ
Ｔについては、単結晶膜として生成させることが必要で
あることから、この膜生成の基板は、サファイヤなどの
限られた単結晶基板が用いられる必要がある。また、カ
ルコゲナイド系では、可視光域では光吸収が大であるこ
とから可視光域の光導波路とすることができない。更に
Ｔａ．Ｏ，については、光ＩＣで良く用いられるＬｉＮ
ｂ０３基板，ＬｉＴａＯｘ基板に比し、その屈折率が小
さいことから、このような基板に対する光導波路として
構成することができない。Conventionally, as a low-loss waveguide, TatOs+Nb2O
Amorphous films such as 5, PLZT (Pb+ Li
, a composite oxide of Zr, Ti), a single crystal film of As.
Chalcogenides such as S, have been used as high refractive index waveguides. The refractive index of each of these materials is 1 for Ta and O.
．． 9-2.2. 2.1 to 2.3 for NbzOs,
About 2.6 for PLZT and 2.6 for chalcogenide.
It has a high refractive index greater than 3. However, PLZ
Since T needs to be produced as a single crystal film, a limited number of single crystal substrates such as sapphire must be used as the substrate for producing this film. In addition, chalcogenide-based materials have large light absorption in the visible light range, so they cannot be used as optical waveguides in the visible light range. Furthermore, Ta. Regarding O, LiN, which is often used in optical ICs, is used.
Since its refractive index is smaller than that of the b03 substrate and the LiTaOx substrate, it cannot be configured as an optical waveguide for such substrates.
〔発明が解決しようとする課題］
上述したように従来、特に近赤外から可視光域にわたっ
て低伝ｒａ損（＜１ｄＢ／ｃｍ）をもって、ＬｔＮｂＯ
＊＋ ＬｘＴａ０３のような基板上に薄膜光導波路を構
成することができていない。[Problems to be Solved by the Invention] As mentioned above, conventional LtNbO
*+ It is not possible to construct a thin film optical waveguide on a substrate such as LxTa03.
本発明による光導波路装置は、第１図に示すように、基
板（１）上に、Ｔａ２ＯｓにＴｉＯ２がドープされ、Ｔ
ｉとＴａの和に対するＴｉがＯ〜６０原子％とされたア
モルファス光導波路（２）を形成する。As shown in FIG. 1, the optical waveguide device according to the present invention has Ta2Os doped with TiO2 on a substrate (1), and T2Os is doped with TiO2.
An amorphous optical waveguide (2) is formed in which Ti is O to 60 atomic % with respect to the sum of i and Ta.
上述の本発明装置の光導波路（２）は、近赤外から可視
域にわたって充分低損失でかつ大きな屈折率が得られた
．例えば０．６３２８μｍの波長における屈折率ｎは、
２．２〜２．４程度の範囲においてＴｉのドーブ量の選
定によって可変できた。The optical waveguide (2) of the device of the present invention described above had sufficiently low loss and a large refractive index over the near infrared to visible range. For example, the refractive index n at a wavelength of 0.6328 μm is
It could be varied by selecting the amount of Ti doping in the range of about 2.2 to 2.4.
第２図Ａに示すように、基板（１）例えばＬｉＮｂＯ，
ｉ板上にＴａｚＯｓにＴｉＯｚがドーブされた薄膜ｌ２
ΦをＣＶＤ（化学的気相成長）法によって形成する。こ
のＣＶＤは、タンクルベンタエトキシドＴａ （ＯＣ２
８Ｓ） ｓ及びチタンテトライソブ口ボキシドＴｉ （
０− ｉ−ＣＪｔ） ４を原料ガスとして用いて基板温
度６００゜Ｃの下で基板（１）上にアモルファス（非品
質）膜として気相成長させる。As shown in FIG. 2A, a substrate (1), for example, LiNbO,
Thin film l2 of TazOs doped with TiOz on an i-board
Φ is formed by CVD (chemical vapor deposition). This CVD is performed using tankurbentaethoxide Ta (OC2
8S) s and titanium tetraisobutoxide Ti (
Using 0-i-CJt) 4 as a source gas, an amorphous (poor quality) film is grown in vapor phase on the substrate (1) at a substrate temperature of 600°C.
この上に例えばフォトレジストによるエッチングレジス
ト（図示せず）を、最終的に得ようとする光導波路のパ
ターンに、周知の技術によって被着し、これをマスクと
して、アモルファス薄膜Ｑ（Ｄを、例えばＲＩＥ（反応
性イオンエッチング）によってエッチングして第２図Ｂ
，に示すように光導波路（２）を形成する。この場合、
薄膜Ｉ２Ｏを光導波路（２）以外においてその全厚さに
わたってエッチング除去することもできるが伝播損の低
減化をはがる上で第２図Ｂｔに示すように薄膜ＱΦの光
導波路（２）以外のエッチングを一部の厚さだけ残して
おくこともできるし、或いは第２図８１で説明したと？
様のエッチングを行って後に例えばＳｉＯ■， Ｔａｚ
Ｏｓなどより成る保護被膜（３）を形成することもでき
る．今、基板（１）上に形成したＴｉｅ．がドーブされ
たアモルファス薄膜ＱＩについて、そのＴｉのドーブ量
を変えて、波長０．６３２８μｍに対する屈折率を測定
した結果を、第３図に示す。第３図において横軸は、↑
ｉとＴａの和に対するＴｉの割合Ｔｉ／ （Ｔｉ ＋Ｔ
ａ） （原子％）で、縦軸に屈折率をとったものである
。これによれば、屈折率ｎは、Ｔｉ量に比例して増大し
、Ｔｉ／ （Ｔｉ ＋Ｔａ） ＝４６（原子％）でｎ
＝２．３５となる。On top of this, an etching resist (not shown) made of photoresist, for example, is applied to the pattern of the optical waveguide to be finally obtained using a well-known technique, and using this as a mask, an amorphous thin film Q (D) is formed, for example. Etched by RIE (Reactive Ion Etching) to form Figure 2B.
An optical waveguide (2) is formed as shown in . in this case,
Although it is possible to remove the thin film I2O over the entire thickness of the optical waveguide (2) other than the optical waveguide (2), in order to reduce propagation loss, as shown in FIG. It is also possible to leave only a part of the etching thickness, or as explained in FIG. 281.
For example, SiO■, Taz
A protective film (3) made of Os or the like can also be formed. Now, the Tie. FIG. 3 shows the results of measuring the refractive index at a wavelength of 0.6328 μm for the amorphous thin film QI doped with Ti by varying the amount of Ti doping. In Figure 3, the horizontal axis is ↑
The ratio of Ti to the sum of i and Ta is Ti/(Ti +T
a) (atomic %), with the refractive index plotted on the vertical axis. According to this, the refractive index n increases in proportion to the amount of Ti, and when Ti/(Ti + Ta) = 46 (atomic %), n
=2.35.
このとき例えば第３図中点Ａで示されるサンプルについ
て導波光の伝播を調べてみたところ、１５ｍ以上導波し
、サンプル端面が光り、充分低損失となっていることが
確認された。しかしながらＴｉ／（Ｔｉ ＋Ｔａ） ＞
６０ （原子％）では結晶化が起り、伝播損は２，激に
増大した。すなわち、Ｏ＜Ｔｉ／（Ｔｉ＋Ｔａ）≦６０
（原子％）の範囲で、またより好ましくは１５＜ Ｔｉ
／ （Ｔｉ ＋Ｔａ） ＜６０ （原子％）で良好なア
モルファス膜が生成され、屈折率ｎが２．２〜２．４に
選定できる。At this time, for example, when the propagation of the guided light was investigated for the sample shown by the middle point A in FIG. 3, it was confirmed that the wave was guided for more than 15 m, the end face of the sample was illuminated, and the loss was sufficiently low. However, Ti/(Ti + Ta) >
At 60 (atomic %), crystallization occurred and the propagation loss significantly increased by 2. That is, O<Ti/(Ti+Ta)≦60
(atomic %) and more preferably 15<Ti
/ (Ti + Ta) <60 (atomic %), a good amorphous film is produced, and the refractive index n can be selected from 2.2 to 2.4.
尚、上述した例では、基板温度が６００″Ｃでアモルフ
ァス膜Ｉ２Ｏ、すなわち光導波路（２）の生膜を行った
が、例えば光ＣＶＤの適用により、基板温度を低めると
きは、アモルファス膜におけるＴｉのドープ量をより大
とすることができることによって、より屈折率ｎを高め
ることができる。In the above example, the amorphous film I2O, that is, the raw film of the optical waveguide (2) was formed at a substrate temperature of 600"C. However, when lowering the substrate temperature by applying photo-CVD, for example, the Ti in the amorphous film By increasing the amount of doping, the refractive index n can be further increased.
また前記Ａ点のサンプルについて、波長０．４７６５μ
ｍに対する屈折率ｎと伝播損を測疋したところ、この場
合ｎ ＝２．４２５となり、伝播損についても０．６３
２８μｍのときと同じであった。Also, regarding the sample at point A, the wavelength is 0.4765μ
When we measured the refractive index n and propagation loss for m, in this case n = 2.425, and the propagation loss was also 0.63.
It was the same as when it was 28 μm.
〔発明の効果］
上述したように、本発明はＴａｚＯｓにＴｉＯ２を、０
＜Ｔｉ／ （Ｔｉ ＋Ｔａ）≦６０（原子％）をもって
添加したアモルファス光導波路によって構成したことに
よって、近赤外から可視域全域にわたって、大きな屈折
率ｎが得られ、かつ低伝播損とすることができるので、
効率の高ル）光導波路を構成することができる。[Effect of the invention] As described above, the present invention adds TiO2 to TazOs and
By constructing the amorphous optical waveguide doped with <Ti/ (Ti + Ta)≦60 (atomic %), a large refractive index n can be obtained over the entire range from near infrared to visible range, and low propagation loss can be achieved. Because you can
A highly efficient optical waveguide can be constructed.
また、その光導波路が、アモルファス膜であることから
、基板（１）としては、単結晶基板であるなどの制約が
ないことから、材料の選定の自由度が大で、したがって
基板（１）の材料としてはその屈折率が低いものが選べ
ることから光導波路との屈折率差を充分大とすることが
でき、光導波路の閉じ込めを効率良く行うことができる
。In addition, since the optical waveguide is an amorphous film, the substrate (1) is not limited to a single crystal substrate, so there is a high degree of freedom in selecting the material. Since a material with a low refractive index can be selected, the difference in refractive index with the optical waveguide can be made sufficiently large, and the optical waveguide can be efficiently confined.
また、光導波路がアモルファス膜より成ることから、そ
の加工が容易であるので、光ＩＣ等において微細加工が
可能となり、実用上の利益は極めて大きい。In addition, since the optical waveguide is made of an amorphous film, it is easy to process, so microfabrication is possible in optical ICs, etc., and the practical benefits are extremely large.
第１図は本発明装置の一例の一部の斜視図、第２図は本
発明装置の製造工程図、第３図は光導波路のアモルファ
ス膜のＴｉドープ量と屈折率との関係の測定曲線図であ
る。
（１）は基板、（２）は光導波路である。Fig. 1 is a perspective view of a part of an example of the device of the present invention, Fig. 2 is a manufacturing process diagram of the device of the present invention, and Fig. 3 is a measurement curve of the relationship between the Ti doping amount of the amorphous film of the optical waveguide and the refractive index. It is a diagram. (1) is a substrate, and (2) is an optical waveguide.
Claims (1)
ｉとＴａの和に対するＴｉが０〜６０原子％とされたア
モルファス光導波路が形成されて成る光導波路装置。On the substrate, Ta_2O_5 is doped with TiO_2 and T
An optical waveguide device comprising an amorphous optical waveguide in which Ti is 0 to 60 atomic % relative to the sum of i and Ta.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26578588A JPH02236506A (en) | 1988-10-21 | 1988-10-21 | Optical waveguide device |
| US07/424,768 US5022729A (en) | 1988-10-21 | 1989-10-20 | Optical waveguide and second harmonic generator |
| EP89119535A EP0365039B1 (en) | 1988-10-21 | 1989-10-20 | Optical waveguide and second harmonic generator |
| DE68914240T DE68914240T2 (en) | 1988-10-21 | 1989-10-20 | Optical waveguide and generator for generating the second harmonic. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26578588A JPH02236506A (en) | 1988-10-21 | 1988-10-21 | Optical waveguide device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02236506A true JPH02236506A (en) | 1990-09-19 |
Family
ID=17422009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26578588A Pending JPH02236506A (en) | 1988-10-21 | 1988-10-21 | Optical waveguide device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02236506A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008096733A1 (en) * | 2007-02-05 | 2008-08-14 | Epiphotonics Inc. | Light amplifier and method for manufacturing the same |
| JP2009139734A (en) * | 2007-12-07 | 2009-06-25 | Nec Corp | Optical device, optical integrated device, and manufacturing method of them |
| JP2013164615A (en) * | 2013-04-18 | 2013-08-22 | Nec Corp | Optical device, optical integrated device, and manufacturing method of optical device |
-
1988
- 1988-10-21 JP JP26578588A patent/JPH02236506A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008096733A1 (en) * | 2007-02-05 | 2008-08-14 | Epiphotonics Inc. | Light amplifier and method for manufacturing the same |
| JP2008192829A (en) * | 2007-02-05 | 2008-08-21 | Univ Waseda | Optical amplifier and manufacturing method therefor |
| JP2009139734A (en) * | 2007-12-07 | 2009-06-25 | Nec Corp | Optical device, optical integrated device, and manufacturing method of them |
| JP2013164615A (en) * | 2013-04-18 | 2013-08-22 | Nec Corp | Optical device, optical integrated device, and manufacturing method of optical device |
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