JPH02234401A - Variable resistor - Google Patents
Variable resistorInfo
- Publication number
- JPH02234401A JPH02234401A JP5531689A JP5531689A JPH02234401A JP H02234401 A JPH02234401 A JP H02234401A JP 5531689 A JP5531689 A JP 5531689A JP 5531689 A JP5531689 A JP 5531689A JP H02234401 A JPH02234401 A JP H02234401A
- Authority
- JP
- Japan
- Prior art keywords
- screw
- magnet
- center
- substrate
- cover
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000000605 extraction Methods 0.000 claims 1
- 230000002159 abnormal effect Effects 0.000 abstract description 2
- 239000000654 additive Substances 0.000 abstract 1
- 230000000996 additive effect Effects 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 239000012535 impurity Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000005389 magnetism Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Adjustable Resistors (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、可変抵抗素子に関す・る。[Detailed description of the invention] [Industrial application field] The present invention relates to a variable resistance element.
第3図は従来の可変抵抗素子の一例の平面図である.
絶縁体の基板の上に電気抵抗材料として炭素、金属、金
属酸化物、もしくはそれらの混合物などで構成された薄
膜抵抗体11を円弧状に印刷、めっき、蒸着、スバツタ
などの種々の方法を用いて形成する。薄膜抵抗体11の
端部には外部に接続するためのリード17と電極12と
を取り付ける。可変抵抗を得るための第三の電極として
薄膜抵抗体11に対して接触が保たれるように金属から
成るブラシ13を設ける。ブラシの抵抗体に対する位置
を移動させるため、摘み14を収り付け、ブラシ13に
接続する。通常、摘みはブラシとの間にテフロンなどで
出来たスベーサ15をかませて何等かの電気的絶縁がブ
ラシに対して施してあるような構造をしている。これに
取り付け台座16およびカバー(図示せず)を取り付け
る。Figure 3 is a plan view of an example of a conventional variable resistance element. A thin film resistor 11 made of carbon, metal, metal oxide, or a mixture thereof is formed as an electrical resistance material on an insulating substrate in an arc shape using various methods such as printing, plating, vapor deposition, sputtering, etc. to form. Leads 17 and electrodes 12 are attached to the ends of the thin film resistor 11 for connection to the outside. A brush 13 made of metal is provided as a third electrode for obtaining variable resistance so as to maintain contact with the thin film resistor 11. In order to move the position of the brush relative to the resistor, the knob 14 is installed and connected to the brush 13. Usually, the knob has a structure in which a smoother 15 made of Teflon or the like is placed between the knob and the brush to provide some kind of electrical insulation to the brush. A mounting base 16 and a cover (not shown) are attached to this.
従来の可変抵抗器においては、特に微小な電圧もしくは
電流を扱うような場合に、可変抵抗素子の第三の電極で
あるブラシと薄膜抵抗体の間の接触による好ましくない
雑音が生じるという問題があった.この雑音は、ブラシ
と薄膜抵抗体とが単に力学的に押えられて接触している
だけであって、接触金属同志の合金化による接合などの
強い結び付きが無いために起こると考えられる。特に、
接触が実際に起こるブラシと薄膜抵抗体とは何等表面を
保護されていない状態で使用されるのが通常の使用方法
であるために、酸化雰囲気など水分の多い場所であると
か、酸やアルカリの存在するような場所では、非常に抵
抗素子の信頼性が低くなってしまうという問題があった
。Conventional variable resistors have the problem of undesirable noise caused by contact between the brush, which is the third electrode of the variable resistance element, and the thin film resistor, especially when handling very small voltages or currents. Ta. This noise is thought to occur because the brush and the thin film resistor are merely mechanically pressed and in contact with each other, and there is no strong bond such as bonding due to alloying of the contacting metals. especially,
The brush and thin film resistor that actually come into contact with each other are normally used with their surfaces unprotected. There is a problem in that the reliability of the resistive element becomes extremely low in such places.
更に、以上の様な環境に置かれた場合には、ブラシ、薄
膜抵抗体の表面に酸化膜などの絶縁層が発生し、抵抗値
可変のために摘みを廻したり移動させたりしてブラシを
動かすと、オーディオ装置の場合にはガリガリという様
な接触不良による大きな雑音が生じるという問題もあっ
た.〔課題を解決するための手段〕
本発明の可変抵抗素子は、絶縁体の基板と、前記基板の
中心から所定距離だけ間隔をおいて前記基板の表面に設
けられた少くとも一つの磁気抵抗素子と、前記磁気抵抗
素子の両端に接続し外部引出し用端子に接続する二本一
組のリードを少くとも一組と、前記磁気抵抗素子を含む
前記基板表面を覆うカバーと、前記基板の中心に中心が
整合するように前記カバーに刻りこまれたねじ穴と、前
記ねじ穴にねじこまれるねじと、前記ねじの先端に設け
られた磁石とを含んで構成される。Furthermore, when placed in the above environment, an insulating layer such as an oxide film is formed on the surface of the brush and thin film resistor, making it difficult to turn or move the knob to change the resistance value. There was also the problem that when moving the audio device, a large noise was generated due to poor contact, such as a scratchy sound. [Means for Solving the Problems] The variable resistance element of the present invention includes an insulating substrate and at least one magnetoresistive element provided on the surface of the substrate at a predetermined distance from the center of the substrate. at least one set of two leads connected to both ends of the magnetoresistive element and connected to an external lead terminal, a cover covering the surface of the substrate including the magnetoresistive element, and a cover at the center of the substrate. The cover includes a screw hole cut into the cover so that their centers are aligned, a screw screwed into the screw hole, and a magnet provided at the tip of the screw.
シリコンなどの半導体には、磁場を加えることによって
その電気抵抗値が変化するという一般的な性質磁気抵抗
効果が存在する。この効果は、シリコン内での電流の担
い手である電子や正孔が掛けられた磁界の影響を受けて
空間的にその濃度が変調されるためと半導体のバンド構
造が外から加えられた磁界によって変化することに起因
していると説明される。磁気抵抗効果は、不純物濃度が
低いような時に大きな値を示す。但し、大きなビエゾ抵
抗効果を持つ抵抗体は、温度の変化に対しても感度が敏
感に変化するため、通常は何等がの温度補正を行って用
いる.磁気に対する抵抗率の変化は非常に直線的である
ため、正確に磁気量を電気抵抗の変化に比例して変換で
きる特徴がある.
上記のセンサでは、外部からの力学信号を動的に電気信
号に変換することを目的としているが、一旦加えられた
物理学的な信号を何等かの方法で一時的、あるいは恒久
的に一定の値に固定する構造を新たに付加することによ
って可変抵抗素子、又は半固定抵抗素子として用いるこ
とが出来る.
〔実施例〕
第1図(a).(b)は本発明の第1の実施例の正面図
及びA−A’線断面図である。Semiconductors such as silicon have a general property called magnetoresistive effect, in which their electrical resistance changes when a magnetic field is applied to them. This effect occurs because the concentration of electrons and holes, which are current carriers in silicon, are spatially modulated under the influence of the applied magnetic field, and because the band structure of the semiconductor is modified by the externally applied magnetic field. It is explained that this is due to changes. The magnetoresistive effect exhibits a large value when the impurity concentration is low. However, a resistor with a large viezoresistance effect is sensitive to changes in temperature, so it is usually used after performing some kind of temperature correction. Since the change in resistivity with respect to magnetism is extremely linear, it has the characteristic of being able to accurately convert the amount of magnetism in proportion to the change in electrical resistance. The purpose of the above sensors is to dynamically convert an external mechanical signal into an electrical signal, but once the physical signal is applied, it is temporarily or permanently converted into a constant state. By adding a new structure that fixes the value, it can be used as a variable resistance element or a semi-fixed resistance element. [Example] Figure 1 (a). (b) is a front view and a sectional view taken along the line AA' of the first embodiment of the present invention.
絶縁体の基板7の表面の中心より少し離れた位置に磁気
抵抗素子1を設ける。基板7に取付けられている端子5
と磁気抵抗素子1の両端とをりード8で接続する.中央
にねじ穴を有するカバー4を覆せて固着する.先端に磁
石2を取付けたねじ3をカバー4のねじ穴に入れる。こ
の磁石2の作る磁界によって磁気抵抗素子1の抵抗値が
変化する。従って、ねじ3を廻して磁石2の位置を変え
ることにより磁気抵抗素子1の抵抗値を所望の値に調整
することができ、本発明の可変抵抗素子が得られる。A magnetoresistive element 1 is provided at a position slightly apart from the center of the surface of an insulating substrate 7. Terminal 5 attached to board 7
and both ends of the magnetoresistive element 1 are connected by leads 8. Cover 4, which has a screw hole in the center, can be overturned and fixed. Insert the screw 3 with the magnet 2 attached to the tip into the screw hole of the cover 4. The resistance value of the magnetoresistive element 1 changes depending on the magnetic field created by the magnet 2. Therefore, by turning the screw 3 and changing the position of the magnet 2, the resistance value of the magnetic resistance element 1 can be adjusted to a desired value, and the variable resistance element of the present invention can be obtained.
この可変抵抗素子の電気抵抗値は、磁気抵抗素子を製造
する際に用いられる不純物の濃度に依存している。磁気
抵抗効果および抵抗値の温度係数も不純物濃度の関数と
して変化する為に、それらの値を必要とされる値に調節
して用いる。所で、同じ不純物濃度であっても磁気抵抗
素子の幅、深さを増減させたり、その長さを変化させる
ことによって任意の用途に適合した電気抵抗値を持たせ
ることが可能である。電気抵抗値の調節は、ねじを廻す
ことによってねじの先端に設けられた磁石と磁気抵抗素
子の距離を変化させることによって行われる。電気抵抗
値の可変範囲は、磁石の移動量を調節することにより磁
気抵抗素子に接しない近傍まで可変可能である。よって
、ねじの動きは制限することが必要であり、何等かのス
トッパを設けてもよい.ねじの大きさや形は任意であり
、ねじ以外にも適当な磁界を磁気抵抗素子に与えた状態
で止められる機能を持つものならば何でも同様の効果を
果たすことが可能である.
第2図は本発明の第2の実施例の断面図である。The electrical resistance value of this variable resistance element depends on the concentration of impurities used when manufacturing the magnetoresistive element. Since the magnetoresistive effect and the temperature coefficient of resistance value also change as a function of impurity concentration, these values are adjusted and used as required. Incidentally, even with the same impurity concentration, it is possible to provide an electrical resistance value suitable for any purpose by increasing or decreasing the width and depth of the magnetoresistive element, or by changing its length. The electrical resistance value is adjusted by turning the screw to change the distance between the magnet provided at the tip of the screw and the magnetic resistance element. The variable range of the electrical resistance value can be varied up to the vicinity where it does not touch the magnetoresistive element by adjusting the amount of movement of the magnet. Therefore, it is necessary to restrict the movement of the screw, and some kind of stopper may be provided. The size and shape of the screw can be arbitrary, and the same effect can be achieved with anything other than a screw that has the function of being able to stop the magnetoresistive element while applying an appropriate magnetic field. FIG. 2 is a sectional view of a second embodiment of the invention.
この実施例においては、複数の磁気抵抗素子が同一磁界
を受けるように、絶縁体の基板7の表面の中心に対して
同一距離だけ離れるように磁気抵抗素子1を4個設け、
各磁気抵抗素子1の両端にリード8を接続し、端子5に
接続する。図示していないが、第1の実施例と同じカバ
ーと磁石付きねじとを取付ける。In this embodiment, four magnetoresistive elements 1 are provided at the same distance from the center of the surface of the insulating substrate 7 so that the plurality of magnetoresistive elements receive the same magnetic field.
Leads 8 are connected to both ends of each magnetoresistive element 1 and connected to terminals 5. Although not shown, the same cover and magnet screw as in the first embodiment are attached.
この様な構成を採ることによって多数の抵抗素子を一度
に変化させる事が可能である。この様な可変抵抗素子は
、多チャネルの入出力を持つような装置における集合可
変低抗体として非常に便利である。By adopting such a configuration, it is possible to change a large number of resistance elements at once. Such a variable resistance element is very useful as a collective variable resistance antibody in a device having multi-channel input/output.
上記実施例においては、磁気抵抗効果のみを用いたもの
について説明したが、磁気電気抵抗変換素子として磁気
トランジスタなどの素子を用いても同様の効果を期待で
きる。この場合には、磁気抵抗効果素子のみでは得られ
ない程度の大きな可変抵抗素子として用いることが可能
となる。Although the above embodiments have been described using only the magnetoresistive effect, similar effects can be expected even if an element such as a magnetic transistor is used as the magneto-electrical resistance conversion element. In this case, it becomes possible to use the variable resistance element as a large variable resistance element that cannot be obtained with a magnetoresistive element alone.
本発明の可変抵抗素子を用いれば、従来の可変抵抗器で
は問題になったような接触による新たな雑音発明、ある
いは接触不良による異常雑音、ブラシと薄膜抵抗素子と
が異った物質から出来ていることに起因する熱電気発生
によるドリフト等の種々の雑音発生によるS/N比の低
下という問題を解決することが出来る。By using the variable resistance element of the present invention, new noise generation due to contact, which was a problem with conventional variable resistors, abnormal noise due to poor contact, and brushes and thin film resistance elements made of different materials can be avoided. It is possible to solve the problem of a decrease in the S/N ratio due to the generation of various noises such as drift due to thermoelectricity generated due to the presence of heat.
更に、従来では接触抵抗を小さくするために種々の方法
が用いられてきたが、本質的にデバイスが抵抗体に対し
て接触しない状態で使用されるために、それらの方法な
くして安く信顆性の高い可変低抗体が得られ・る。磁気
抵抗素子は、半導体の製造プロセスによって作製できる
ため、容易に大量生産が可能であり、また品質も安定し
たものが得られる。従来では剥き出しの状態になってい
た可変抵抗体のブラシ部分や薄膜抵抗部分の表面は存在
しなく、磁気抵抗素子の表面は十分に保護することが可
能であり、従来ではパッケージに工夫をしなくては十分
なバッシベーションが得られなかったが、本発明によれ
ば任意の環境に対するパッシベーションを磁気抵抗素子
の表面に設ける薄膜を変化させるだけで簡単に実行する
こと・が出来る。従来からデジタル方式によるアナログ
スイッチを用いた擬連続的アッテネーターは存在したが
、連続的に変化する電気抵抗の制御には大がかりな回路
を必要とするため、単体の部品としてはその機能を発現
させることは不可能であった。本発明においては、個々
の部品として場所を採らずに設置することが可能である
。Furthermore, conventionally, various methods have been used to reduce contact resistance, but since the device is essentially used without contacting the resistor, it is not possible to achieve low reliability without using these methods. A highly variable and low antibody can be obtained. Magnetoresistive elements can be manufactured by a semiconductor manufacturing process, so they can be easily mass-produced and have stable quality. The surface of the variable resistor's brush part and thin film resistor part, which were exposed in the past, is no longer present, and the surface of the magnetoresistive element can be sufficiently protected, without the need for devising the package in the past. However, according to the present invention, passivation against any environment can be easily achieved by simply changing the thin film provided on the surface of the magnetoresistive element. Quasi-continuous attenuators using digital analog switches have existed for some time, but since controlling continuously changing electrical resistance requires a large-scale circuit, it is difficult to realize this function as a single component. was impossible. In the present invention, it is possible to install the components as individual components without taking up much space.
明の第2の実施例の断面図、第3図は従来の可変抵抗素
子の一例の平面図である。FIG. 3 is a cross-sectional view of the second embodiment of the present invention, and a plan view of an example of a conventional variable resistance element.
1・・・磁気抵抗素子、2・・・磁石、3・・・ねじ、
4・・・カバー、5・・・端子、7・・・基板、8・・
・リード、11・・薄膜抵抗体、12・・・電極、13
・・・ブラシ、14・・・摘み、15・・・スベーサ、
16・・・撮り付け台座、17・・・リード。1... Magnetoresistive element, 2... Magnet, 3... Screw,
4... Cover, 5... Terminal, 7... Board, 8...
・Lead, 11... Thin film resistor, 12... Electrode, 13
...Brush, 14...Pick, 15...Subesa,
16...Photography pedestal, 17...Lead.
Claims (1)
をおいて前記基板の表面に設けられた少くとも一つの磁
気抵抗素子と、前記磁気抵抗素子の両端に接続し外部引
出し用端子に接続する二本一組のリードを少くとも一組
と、前記磁気抵抗素子を含む前記基板表面を覆うカバー
と、前記基板の中心に中心が整合するように前記カバー
に刻りこまれたねじ穴と、前記ねじ穴にねじこまれるね
じと、前記ねじの先端に設けられた磁石とを含むことを
特徴とする可変抵抗素子。an insulating substrate, at least one magnetic resistance element provided on the surface of the substrate at a predetermined distance from the center of the substrate, and connected to both ends of the magnetic resistance element and connected to external extraction terminals. at least one set of two leads, a cover covering the surface of the substrate including the magnetoresistive element, and a screw hole cut into the cover so that its center is aligned with the center of the substrate; A variable resistance element comprising: a screw screwed into the screw hole; and a magnet provided at the tip of the screw.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5531689A JP2844640B2 (en) | 1989-03-07 | 1989-03-07 | Variable resistance element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5531689A JP2844640B2 (en) | 1989-03-07 | 1989-03-07 | Variable resistance element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02234401A true JPH02234401A (en) | 1990-09-17 |
JP2844640B2 JP2844640B2 (en) | 1999-01-06 |
Family
ID=12995150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5531689A Expired - Fee Related JP2844640B2 (en) | 1989-03-07 | 1989-03-07 | Variable resistance element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2844640B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011119392A (en) * | 2009-12-02 | 2011-06-16 | Shuho:Kk | Resistor substrate and variable resistor |
-
1989
- 1989-03-07 JP JP5531689A patent/JP2844640B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011119392A (en) * | 2009-12-02 | 2011-06-16 | Shuho:Kk | Resistor substrate and variable resistor |
Also Published As
Publication number | Publication date |
---|---|
JP2844640B2 (en) | 1999-01-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4937521A (en) | Current detecting device using ferromagnetic magnetoresistance element | |
US3286161A (en) | Magneto-resistive potentiometer | |
US4125821A (en) | Potentiometer providing a non-linear output | |
JPH02291005A (en) | Target value setting device for integrated circuit | |
US5883419A (en) | Ultra-thin MO-C film transistor | |
JPH0213751B2 (en) | ||
EP1399749A2 (en) | Compensating a sensor for measuring a magnetic field | |
US3898359A (en) | Thin film magneto-resistors and methods of making same | |
US4845456A (en) | Magnetic sensor | |
US3016507A (en) | Thin film magneto resistance device | |
JPH02234401A (en) | Variable resistor | |
KR20050113196A (en) | Semiconductor sensor and method for manufacturing same | |
US5646051A (en) | Process for forming a magnetoresistive sensor for a reading head | |
KR960000763Y1 (en) | Magnetic detection device | |
US3657686A (en) | Galvano-magnetro effect apparatus | |
Hanafi et al. | Flicker noise due to grain boundaries in n-type Hg1− xCdxTe | |
JPS6249994B2 (en) | ||
JPS59143358A (en) | Semiconductor thin film resistance element | |
JPH02250301A (en) | Variable resistance element | |
JPH01101676A (en) | Superconducting transistor | |
JPH01110215A (en) | Angle of rotation sensor | |
JPH0473087B2 (en) | ||
JP3492825B2 (en) | Magnetoresistive displacement sensor | |
JP3182905B2 (en) | Manufacturing method of magnetic sensor | |
JPS63263702A (en) | Manufacture of platinum thin film temperature sensor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071030 Year of fee payment: 9 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081030 Year of fee payment: 10 |
|
LAPS | Cancellation because of no payment of annual fees |