JPH02232968A - Solid-state image sensor - Google Patents
Solid-state image sensorInfo
- Publication number
- JPH02232968A JPH02232968A JP1054291A JP5429189A JPH02232968A JP H02232968 A JPH02232968 A JP H02232968A JP 1054291 A JP1054291 A JP 1054291A JP 5429189 A JP5429189 A JP 5429189A JP H02232968 A JPH02232968 A JP H02232968A
- Authority
- JP
- Japan
- Prior art keywords
- film
- photoelectric conversion
- conversion element
- section
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000003384 imaging method Methods 0.000 claims description 9
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract 3
- 230000003449 preventive effect Effects 0.000 abstract 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- FBOUIAKEJMZPQG-AWNIVKPZSA-N (1E)-1-(2,4-dichlorophenyl)-4,4-dimethyl-2-(1,2,4-triazol-1-yl)pent-1-en-3-ol Chemical compound C1=NC=NN1/C(C(O)C(C)(C)C)=C/C1=CC=C(Cl)C=C1Cl FBOUIAKEJMZPQG-AWNIVKPZSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は固体撮像装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a solid-state imaging device.
従来の固体撮像装置は第２図にその断面図を示すように
、半導体基板２０１中にはＰウェル２０２を有し、この
Ｐウェル２０２の受光部の光電変換素子２０３と電荷転
送部のチャネル部２０４とがそれらの間に読み出し部２
１２が設けられており、半導体基板２０１上にはシリコ
ン酸化膜２０６を介して電荷転送ゲート電極２０８、さ
らにその上部には半導体基板２０１の一面に堆積された
ＣｖＤ膜等の層間膜２０９を介して遮光アルミニウム膜
２１０が形成されており、光電変換素子２０３とチャネ
ル部との組の外側にチャネルストッパー２０３が形成さ
れているという構造となっていた。The conventional solid-state imaging device has a P-well 202 in a semiconductor substrate 201, as shown in a cross-sectional view in FIG. 204 and the reading unit 2 between them.
A charge transfer gate electrode 208 is provided on the semiconductor substrate 201 via a silicon oxide film 206, and an interlayer film 209 such as a CvD film deposited on one surface of the semiconductor substrate 201 is provided above the charge transfer gate electrode 208. A light-shielding aluminum film 210 was formed, and a channel stopper 203 was formed outside the pair of the photoelectric conversion element 203 and the channel portion.
上述した従来の固体撮像装置において、第２図で破線で
示すような受光部の光電変換素子２０３に垂直な光が入
射した場合、光電変換素子２０３又はその近傍で電荷が
発生する。光電変換素子２０３の近傍で発生した電荷は
直ちに光電変換素子２０３に流れ込み、信号電荷となる
。しかし第２図で実線で示すような受光部の光電変換素
子２０３に対し斜めな光が入射した場合、光は遮光アル
ミニウム膜２１０の側面で反射し光電変換素子２０３よ
り遠く、電荷転送部のチャネル部２０４に近いところに
電荷を発生させる。この電荷はチャネル部２０４に流れ
込む．電荷転送ゲート電極と兼用する読み出しゲート電
極２０８に読み出しパルスを加えていない時に、チャネ
ル部２０４に電荷が入り、正確な信号が得られないとい
う欠点がある．このチャネル部２０４に入った電荷はス
ミ７成分となる．
〔課題を解決するための手段〕
本発明の目的は雑音電荷の発生を防止した固体撮像装置
を得ることにある．本発明によれば、半導体基板上に光
を受ける光電変換素子と電荷転送部と電荷を光電変換素
子から電荷転送部への読み出しを行う読み出し部とを有
し、光電変換素子以外の部分を覆っている遮光膜の開口
部の側面に反射防止膜を有している固体撮像装置を得る
．〔実施例〕
次に、本発明について図面を参照して説明する．第１図
は本発明の一実施例の縦断面図である．Ｎ型半導体基板
１０１中に形成されている浅いＰウェル１０２に受光部
としてのＮ型の光電変換素子１０３と電荷転送部のチャ
ネル部１０４が形成されている。さらに光電変換素子１
０３の周囲は読み出部以外チャネルストッパ１０５とな
るＰ型拡散層が形成されている．また半導体基板１０１
上の活性領域にはゲート酸化膜１０６、活性領域の周囲
はフィールド酸化膜１０７が形成されている．チャネル
部１０４と読み出し部１１２との上部には電荷転送ゲー
｝１０８が形成され、層間膜１０９を介して光電変換素
子１０３以外を遮光アルミニウム膜１１０が覆っている
．さらに光電変換素子領域１０３で遮光アルミニウム膜
１１０の開口部の側面には反射防止用のシリコン膜１１
１が形成されている。In the conventional solid-state imaging device described above, when perpendicular light enters the photoelectric conversion element 203 of the light receiving section as shown by the broken line in FIG. 2, charges are generated at or near the photoelectric conversion element 203. Charges generated near the photoelectric conversion element 203 immediately flow into the photoelectric conversion element 203 and become signal charges. However, when oblique light enters the photoelectric conversion element 203 of the light receiving section as shown by the solid line in FIG. A charge is generated near the portion 204. This charge flows into the channel section 204. A drawback is that when no read pulse is applied to the read gate electrode 208, which also serves as a charge transfer gate electrode, charges enter the channel portion 204, making it impossible to obtain accurate signals. The charge entering this channel portion 204 becomes the Sumi 7 component. [Means for Solving the Problems] An object of the present invention is to obtain a solid-state imaging device that prevents the generation of noise charges. According to the present invention, the semiconductor substrate includes a photoelectric conversion element that receives light, a charge transfer section, and a readout section that reads charges from the photoelectric conversion element to the charge transfer section, and covers parts other than the photoelectric conversion element. A solid-state imaging device is obtained which has an antireflection film on the side surface of the opening of the light-shielding film. [Example] Next, the present invention will be explained with reference to the drawings. FIG. 1 is a longitudinal sectional view of one embodiment of the present invention. In a shallow P-well 102 formed in an N-type semiconductor substrate 101, an N-type photoelectric conversion element 103 as a light receiving section and a channel section 104 as a charge transfer section are formed. Furthermore, photoelectric conversion element 1
A P-type diffusion layer is formed around 03 to serve as a channel stopper 105 except for the readout section. Also, the semiconductor substrate 101
A gate oxide film 106 is formed in the upper active region, and a field oxide film 107 is formed around the active region. A charge transfer gate 108 is formed above the channel section 104 and the readout section 112, and a light-shielding aluminum film 110 covers everything except the photoelectric conversion element 103 via an interlayer film 109. Further, in the photoelectric conversion element region 103, an anti-reflection silicon film 11 is provided on the side surface of the opening of the light-shielding aluminum film 110.
1 is formed.
この反射防止用のシリコン膜１１１は遮光アルミニウム
膜１１０のパターンを形成後、全面にシリコンを１００
０人以下程度スパッタする。この時遮光アルミニウム膜
１１０は感度を保つため、多少開口面積が大きくパター
ニングされている。After forming the pattern of the light-shielding aluminum film 110, this silicon film 111 for anti-reflection is coated with 100% silicon on the entire surface.
Approximately 0 or less people spatter. At this time, the light-shielding aluminum film 110 is patterned to have a somewhat larger opening area in order to maintain sensitivity.
さらに異方性エッチングをして遮光アルミニウム膜１１
０の側面にのみシリコン膜１１１を残して形成される．
この反射防止膜としてはシリコンの外にＴ ｉ Ｎ，Ｔ
ｉＷ膜を用いることができる。Furthermore, the light-shielding aluminum film 11 is anisotropically etched.
The silicon film 111 is formed only on the side surfaces of 0. This anti-reflection film is made of T i N,T in addition to silicon.
An iW film can be used.
以上説明したように、本発明は遮光アルミニウム膜の側
面に反射防止用の膜を形成することにより受光部の光電
変換素子に対して斜めに入射してくる光に対し、遮光ア
ルミニウム膜の側面での反射を防ぎ、電荷転送部のチャ
ネル部付近での電荷の発生を防ぐことができる．このこ
とにより光量に対するより正確な信号が得られる．
・・・シリコン酸化膜、１０８，２０８・・・・・・電
荷転送ゲート電極、１０９，２０９・・・・・・層間膜
、１１０，２１０・・・・・・遮光アルミニウム膜、ｌ
１１・・・・・・反射防止用シリコン、１′１２，２１
２・・・・・・読み出Ｌ部．代理人 弁理士 内 原
晋As explained above, the present invention forms an anti-reflection film on the side surface of the light-shielding aluminum film to prevent light obliquely incident on the photoelectric conversion element of the light-receiving section. It is possible to prevent the reflection of light and the generation of charge near the channel section of the charge transfer section. This allows a more accurate signal for the amount of light to be obtained. ...Silicon oxide film, 108,208...Charge transfer gate electrode, 109,209...Interlayer film, 110,210...Light-shielding aluminum film, l
11... Silicon for antireflection, 1'12, 21
2...Reading L part. Agent Patent Attorney Susumu Uchihara
第１図は本発明の一実施例による固体撮像装置の縦断面
図、第２図は従来の固体撮像装置の縦断面図である．FIG. 1 is a vertical sectional view of a solid-state imaging device according to an embodiment of the present invention, and FIG. 2 is a vertical sectional view of a conventional solid-state imaging device.
Claims (1)
読み出し部とを有する固体撮像装置において、前記光電
変換素子以外を覆う遮光膜の開口部の側面に反射防止膜
を有することを特徴とする固体撮像装置。A photoelectric conversion element and a charge transfer section formed on a semiconductor substrate,
What is claimed is: 1. A solid-state imaging device having a readout section, characterized in that the solid-state imaging device has an anti-reflection film on a side surface of an opening of a light-shielding film that covers areas other than the photoelectric conversion element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1054291A JPH02232968A (en) | 1989-03-06 | 1989-03-06 | Solid-state image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1054291A JPH02232968A (en) | 1989-03-06 | 1989-03-06 | Solid-state image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02232968A true JPH02232968A (en) | 1990-09-14 |
Family
ID=12966464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1054291A Pending JPH02232968A (en) | 1989-03-06 | 1989-03-06 | Solid-state image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02232968A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100440774B1 (en) * | 2001-12-21 | 2004-07-21 | 주식회사 하이닉스반도체 | Image sensor with Light shield layer |
-
1989
- 1989-03-06 JP JP1054291A patent/JPH02232968A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100440774B1 (en) * | 2001-12-21 | 2004-07-21 | 주식회사 하이닉스반도체 | Image sensor with Light shield layer |
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