JPH02232922A - Impurity doping - Google Patents
Impurity dopingInfo
- Publication number
- JPH02232922A JPH02232922A JP5341789A JP5341789A JPH02232922A JP H02232922 A JPH02232922 A JP H02232922A JP 5341789 A JP5341789 A JP 5341789A JP 5341789 A JP5341789 A JP 5341789A JP H02232922 A JPH02232922 A JP H02232922A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- alsb
- temperature
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 15
- 229910017115 AlSb Inorganic materials 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 9
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract description 6
- 229910005542 GaSb Inorganic materials 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 2
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000004907 flux Effects 0.000 description 7
- 238000005259 measurement Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ＡｆｆｉＳｂ成長時のＳｉドーピング方法、
特にＳＬをドーピングした／Ｍ！Ｓｂの伝導形の制御に
関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention provides a method for doping Si during AffiSb growth,
Especially doped SL/M! This invention relates to controlling the conduction type of Sb.
ｍ−Ｖ族化合物半導体材料であるＡＩＳｂは、ＧａＳｂ
，ＩｎＡｓ及びそれらの混晶半導体に対して格子定数が
似ていることと、それらより禁制帯幅が大きいこと等に
より、それらの半導体に対するバリア層材料として注目
されている。例えば、二次元電子ガス電界効果トランジ
スタ作製用のウエハとしては、ｎ−Ａ／！Ｓｂ／ＧａＳ
ｂ構造が用いられるであろう。この場合、ｎ形のＡ／！
Ｓｂ層が必要であるが、この場合ドナー不純物としては
、Ｇａｒｂのドナー不純物としてよく用いられるＴｅ．
がＡｌＳｂのドナー不純物として用いられていた。AISb, which is an m-V group compound semiconductor material, is GaSb
, InAs, and their mixed crystal semiconductors, and because of their similar lattice constant and larger forbidden band width, they are attracting attention as barrier layer materials for these semiconductors. For example, as a wafer for manufacturing two-dimensional electron gas field effect transistors, n-A/! Sb/GaS
b structure will be used. In this case, the n-type A/!
An Sb layer is required, but in this case, the donor impurity is Te.
was used as a donor impurity for AlSb.
Ｔｅは蒸気圧の低い元素であり、液相成長法，気相成長
法．分子線成長法等のいかなる成長法においても制御性
が低く、例えば急峻なドーピングプロファイルを得るこ
とは困難であった。例えば分子線成長法によるＡｆＳｂ
の成長においてＴｅをドーピングする場合、Ｔｅの分子
線源セル温度は、通常良く用いられる１０”ｃｍ−”程
度のドーピング濃度に対しては、２００℃程度と低く、
従って、分子線源セル温度の少しの変動によりドーピン
グ濃度が大きく揺らぎ、制御性が極めて悪い。同様に急
峻にドーピング濃度を変えたい場合にも、分子線源セル
温度の制御性が悪いことより、急峻なドーピングプロフ
ァイルの形成は困難であった。Te is an element with a low vapor pressure and can be used for liquid phase growth, vapor phase growth, etc. Any growth method such as molecular beam growth has poor controllability, and it has been difficult to obtain, for example, a steep doping profile. For example, AfSb by molecular beam growth method
When doping Te in the growth of Te, the Te molecular beam source cell temperature is as low as about 200°C for the commonly used doping concentration of about 10"cm-".
Therefore, the doping concentration fluctuates greatly due to slight fluctuations in the molecular beam source cell temperature, resulting in extremely poor controllability. Similarly, even when it is desired to change the doping concentration sharply, it is difficult to form a steep doping profile due to the poor controllability of the molecular beam source cell temperature.
また更にｐ−Ａｎ Ｓ ｂ層が必要な場合は、例えば、
Ｂｅ等のアクセプタドーピング用の分子線源セルが新た
に必要となった。Furthermore, if a p-An S b layer is required, for example,
A new molecular beam source cell for acceptor doping such as Be was required.
本発明の目的は、上述のような問題点を解決した不純物
のドーピング方法を提供することにある。An object of the present invention is to provide an impurity doping method that solves the above-mentioned problems.
本発明は、／ｌｓｂ成長時にＳｉをドーピングするに際
し、成長温度を変えてＳｉをドーピングすることにより
、その成長層の伝導形をｐ形またはｎ形と制御すること
を特徴とする。The present invention is characterized in that when doping Si during /lsb growth, the conductivity type of the grown layer is controlled to be p-type or n-type by doping Si while changing the growth temperature.
ＧａＡｓ結晶に対するドナー不純物として通常良く用い
られる■族元素のＳｉは、蒸気圧が低く、制御性の高い
不純物であるが、ＧａＳｂに代表される■族にｓｂを用
いた■一■族化合物半導体に対しては■族原子位置を占
めてアクセプタとして働くことが一般に良く知られてい
る。一方、Ａ尼ｓｂに対するＳｉ不純物ドーピング特性
の成長条件との関係は知られていない。第１図は、分子
線成長法により半絶縁性ＧａＡｓ基板上に作製したＡ１
Ｓｂに対するＳｉドーピングのホール測定によるキャリ
ア濃度とキャリア移動度の測定結果であり、ＳＳをドー
ピングした／ｌｓｂ層の成長温度Ｔ９と伝導形、正孔ま
たは電子濃度及び移動度μの関係を示した図であ。Si, a group III element commonly used as a donor impurity for GaAs crystals, has a low vapor pressure and is an impurity that can be easily controlled. It is generally well known that it occupies the group (■) atom position and acts as an acceptor. On the other hand, the relationship between the Si impurity doping characteristics and the growth conditions for Asb is unknown. Figure 1 shows A1 fabricated on a semi-insulating GaAs substrate using the molecular beam growth method.
This is the measurement result of carrier concentration and carrier mobility by hole measurement of Si doping for Sb, and is a diagram showing the relationship between the growth temperature T9 of the SS-doped/lsb layer, conductivity type, hole or electron concentration, and mobility μ. So.
成長は、Ａｌフラックス量を１．８Ｘ１０−フＴｏｒｒ
、ｓｂフラックス量を２．７Ｘ１０−”Ｔｏｒｒ，成長
速度を１．２μｍ／ｈＳＳ ｉのドーピング濃度を９．
３Ｘ１０Ｉ７ｃｍ−３とし、基板温度を様々に変えて行
った。For growth, the Al flux amount was set to 1.8X10-F Torr.
, sb flux amount was 2.7×10-”Torr, growth rate was 1.2 μm/hSSi doping concentration was 9.
3×10I7 cm −3 and the substrate temperature was varied.
この測定結果より明らかなように、Ａρｓｂに対してＳ
ｉは、成長温度４９０゜Ｃ付近を境に、成長温度が低い
領域ではｍ族原子位置を占めドナー不純物として、また
成長温度が高い領域ではＶ族原子位置を占めアクセプタ
不純物として働くことが分かった。従ってこのＡｆＳｂ
に対するＳｉドーピングの結果より、／ｌｓｂについて
は成長温度を選ぶことにより、Ｓ１をドナー不純物また
はアクセプタ不純物として選択的に利用できることが分
かった。As is clear from this measurement result, S
It was found that i occupies the group M atom position in the region where the growth temperature is low and acts as a donor impurity, and it occupies the V group atom position in the region where the growth temperature is high and acts as an acceptor impurity, with the growth temperature being around 490°C. . Therefore, this AfSb
From the results of Si doping for /lsb, it was found that by selecting the growth temperature, S1 can be selectively used as a donor impurity or an acceptor impurity.
両性不純物であるＳｉが■族原子位置またはＶ族原子位
置を占めるかは、成長時の表面でのＡｆ原子とｓｂ原子
の化学量論比が大きく影響しているであろう。分子線成
長法の場合は、■族フラックス量と■族フラックス量の
関係によっても成長時の表面での，／ｌ原子とｓｂ原子
の化学量論比を変化させることもできる。しかしながら
、桁違いに大きなフラックス量の差のある条件での成長
は、制御性，経済性ばかりではなく結晶性から判断して
も実際的ではないことは明らかである。通常用いられる
成長条件において、成長温度だけを制御する手法があら
ゆる観点から判断して最も有利である。Whether Si, which is an amphoteric impurity, occupies the group II atom position or the group V atom position is likely to be largely influenced by the stoichiometric ratio of Af atoms and sb atoms on the surface during growth. In the case of the molecular beam growth method, the stoichiometric ratio of /l atoms and sb atoms at the surface during growth can also be changed depending on the relationship between the amount of the group II flux and the amount of the group II flux. However, it is clear that growth under conditions where there is an order of magnitude difference in flux amount is not practical, judging from not only controllability and economic efficiency but also crystallinity. Under commonly used growth conditions, a method of controlling only the growth temperature is the most advantageous from all viewpoints.
以下、本発明の実施例について図面を用いて詳細に説明
する．
第２図は、Ｔｅをドープした電子濃度約４×１０１？Ｃ
Ｉ１−クのＧａＳｂ （１００）基板２１上に本発明に
より分子線成長法により作製したＡｌｌ！Ｓｂのｐｎ接
合試料の断面図である．
この試料の共通の成長条件は、Ａ１フラックス量を１．
８Ｘ１０−’ＴｏｒｒＳＳ ｂフラックス量を２．７×
１０−”Ｔｏｒｒ， Ｓ ｔのドーピング濃度は約Ｉ
ＸＩＯｌ′ｌｃｍ−３であり、以下の手順で作製した。Hereinafter, embodiments of the present invention will be described in detail using the drawings. Figure 2 shows a Te-doped electron concentration of approximately 4 x 101? C
All! produced by the molecular beam growth method according to the present invention on the GaSb (100) substrate 21 of I1-K! FIG. 3 is a cross-sectional view of a Sb pn junction sample. The common growth conditions for this sample are the A1 flux amount of 1.
8X10-'TorrSS b flux amount 2.7x
10-” Torr, the doping concentration of St is approximately I
XIOl'lcm-3, which was produced by the following procedure.
まず、ＧａＳｂ基板２１上に成長温度３９０゜Ｃで約２
μｍの第１の／ｌｓｂ層２２を作製した。次に、基仮温
度を６１０″Ｃに上昇させ、引き続いて６１０’Ｃにお
いて０．５μｍの第２のＡｆＳｂ層２３を作製した。そ
の後、分子線成長装置から取り出し、蒸着により、直径
５００μｍのＡｕＺｎ層２４とＡｕ層２５を形成し、そ
れらをマスクとして酢酸系のエッチャントにより約１μ
ｍのメサエッチングを行った。First, on a GaSb substrate 21, about 2
A first /lsb layer 22 of .mu.m was fabricated. Next, the base temperature was raised to 610"C, and a second AfSb layer 23 with a thickness of 0.5 μm was subsequently formed at 610"C. Thereafter, it was removed from the molecular beam growth apparatus, and an AuZn layer 23 with a diameter of 500 μm was deposited by vapor deposition. Form a layer 24 and an Au layer 25, and use them as a mask to remove approximately 1 μm using an acetic acid-based etchant.
Mesa etching of m was performed.
更に基板裏面にはＡｕＳｎ層２６の蒸着により、オーミ
ックコンタクトを形成した。この試料においては、第１
のＡｆＳｂｊｉ２２の伝導形はｎ形、第２のＡｎ！Ｓｂ
層２３の伝導形はｐ形であり、ｐｎ接合が形成されてい
ること及び第１のＡｌｌ！Ｓｂ層２２はｎ形で電子濃度
は約Ｉ ＸＩＯ”ｃｍ−３であることを容量一電圧測定
より確認した。Furthermore, an ohmic contact was formed by vapor-depositing an AuSn layer 26 on the back surface of the substrate. In this sample, the first
The conductivity type of AfSbji22 is n type, and the second An! Sb
The conductivity type of the layer 23 is p-type, a pn junction is formed, and the first All! It was confirmed by capacitance-voltage measurement that the Sb layer 22 was n-type and had an electron concentration of about IXIO''cm-3.
以上のように本発明によれば、蒸気圧が低く制御性の高
いＳｉ不純物だけを用いることにより、制御性の悪いＴ
ｅ不純物を用いることなくｎ形ＡｐｓｂＮを形成できる
だけではなく、Ｂｅ等のアクセプタ不純物を新たに用い
ることなくｐ形Ａ！ｓｂ層を形成することが可能である
。なお本発明は、Ａ１組成の高いＡｆＧａＳｂ結晶にお
いても同様に効果があることは明らかである。As described above, according to the present invention, by using only Si impurities with low vapor pressure and high controllability, T
Not only can n-type ApsbN be formed without using an e impurity, but also p-type A! It is possible to form an sb layer. It is clear that the present invention is equally effective for AfGaSb crystals with a high A1 composition.
第１図は分子線成長法により半絶縁性ＣｒａＡｓ基板上
に形成した、ＳｉをドーピングしたＡＩＳｂ層の成長温
度と伝導形，正孔または電子濃度及び移動度の関係を示
した図、
第２図は本発明により作製した１４！Ｓｂのｐｎ接合試
料の断面図である。
２１・・・・・Ｇａｒｂ基板
２２・・・・・第１の，６／！Ｓｂｌ
２３・・・・・第２のＡｆｆｉＳｂＪｉ２４・・・・・
ＡｕＺｎＮ
２５・・・・・Ａｕ層
２６・Figure 1 shows the relationship between growth temperature, conductivity type, hole or electron concentration, and mobility of a Si-doped AISb layer formed on a semi-insulating CraAs substrate by molecular beam growth. is 14! produced according to the present invention! FIG. 3 is a cross-sectional view of a Sb pn junction sample. 21... Garb board 22... First, 6/! Sbl 23...Second AffiSbJi24...
AuZnN 25... Au layer 26...
Claims (1)
成長温度を変えてＳｉをドーピングすることにより、そ
の成長層の伝導形をｐ形またはｎ形と制御することを特
徴とする不純物のドーピング方法。(1) When doping Si during AlSb growth,
An impurity doping method characterized in that the conductivity type of the grown layer is controlled to be p-type or n-type by doping Si while changing the growth temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5341789A JPH02232922A (en) | 1989-03-06 | 1989-03-06 | Impurity doping |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5341789A JPH02232922A (en) | 1989-03-06 | 1989-03-06 | Impurity doping |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02232922A true JPH02232922A (en) | 1990-09-14 |
Family
ID=12942263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5341789A Pending JPH02232922A (en) | 1989-03-06 | 1989-03-06 | Impurity doping |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02232922A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4925630U (en) * | 1972-06-09 | 1974-03-05 | ||
| JPS4925629A (en) * | 1972-06-30 | 1974-03-07 |
-
1989
- 1989-03-06 JP JP5341789A patent/JPH02232922A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4925630U (en) * | 1972-06-09 | 1974-03-05 | ||
| JPS4925629A (en) * | 1972-06-30 | 1974-03-07 |
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