JPH02232366A - Sputtering device - Google Patents

Abstract

PURPOSE:To continuously obtain multilayered laminated films and composition-modified films with a simple mechanism by providing targets of plural sputtering cathodes toward one film forming region, connecting respectively independent sputtering power sources to the above-mentioned respective cathodes and providing a means for controlling the output waveforms of the respective power sources in synchronization. CONSTITUTION:The respectively independent sputtering power sources 7a, 7b are used for the respective cathodes 2a, 2b and are connected to arbitrary waveform transmitters 8a, 8b in the case of using the target 3a consisting of an Fe-Co alloy for the above-mentioned cathode 2a and the target 3b consisting of Tb for the target 2b. The multilayered laminated films consisting of Fe-Co/Tb are formed or substrates 4 while the film thicknesses of the respective layers are controlled when square waves, etc., are impressed to the cathodes 2 by controlling the speed at which the substrates 4 pass one film forming region 6, the outputs of the respective power sources 7a, 7b and the time of the outputs thereof by the above-mentioned oscillators 8a, 8b. Further, the compsn. modulated films consisting of Fe-Co/Tb are obtd. when the output waveforms of the power sources 7a, 7b are made into sine waves, etc., by the control of the transmitters 8a, 8b.

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a sputtering apparatus used to form a thin film on a moving substrate by sputtering, or to create a multilayer laminated film or a compositionally modulated film.

(Prior Art) Recently, the physical properties of multilayer laminated films in which two or more types of elements are repeatedly laminated in multiple layers in the film thickness direction and composition-modulated films in which the composition is modulated in the film thickness direction have been studied. The main one is F.
e-TI film, Ni-Cu film, Fe-Tb film, PeCo
- Tb film, Go - Ta - Nb - N film, etc. When creating a magneto-optical disk using a Pe-Tb film or a PeCo-Tb film, it is possible to create a multi-layered film of repeated Fe or FeCo layers and Tb layers, or a composition of It is known that the modulation film has a higher coercive force and a better C/N value. In this case, the thickness of each layer is approximately 5 to 20 people, and the total thickness is 2.
The layers are stacked to a thickness of 00 to 1000 people.

As shown in Fig. 1, an apparatus for producing the above-mentioned multilayer laminated films and compositionally modulated films by sputtering is equipped with a plurality of cathodes dSe each equipped with targets b and c in a vacuum chamber a.
A substrate holder g with a substrate fS f attached thereto faces the cathodes d and e through a anti-aging plate h. The device shown in the figure is
This device is used as an optical disc creation device, and the cathode d is provided with a target b of Pe or PeCo, the other cathode e is provided with a target C of Tb, and these targets b and c are kept constant. While performing sputtering using the power output of , the shutters 1, 1 provided in the openings j of the adhesion prevention plate h are opened, and a multilayer film for magneto-optical recording is formed on the disk substrates f, f of the rotating substrate holder g.

At this time, the film thickness of each film constituting the multilayer film is controlled by the power input to the cathode, the rotation speed of the substrate holder, the area of the opening of the adhesion prevention plate, etc.

In addition, as a sputtering apparatus for depositing a large amount of film on a large number of substrates or large substrates, as shown in FIG.
There is also known a method in which films are continuously formed on the substrates f and f during the movement process.

(Problems to be Solved by the Invention) In the apparatus shown in FIG. 1, it is necessary to rotate the substrate f in order to form a multilayer film or the like. Therefore, for example, SiNx is formed on the substrate as a base film, and then Pe
In the case of an actual magnetic disk in which a Co-Tb multilayer film is formed and siNxm is further formed as a protective film on top of the Co-Tb multilayer film, the manufacturing equipment forms the base film, multilayer film, and protective film. It is necessary to have three chambers for this purpose, as well as a mechanism for rotating and moving the substrate holder. A manufacturing apparatus having such a configuration has a problem that the mechanism is extremely complicated and reliability is poor. In addition, after moving the substrate holder to the center between the cathodes, the shutter is opened to form a film, and when the film formation is finished, the shutter is closed again and the substrate holder is moved, so there is a lot of travel time during which film formation cannot be performed. In addition to causing the inconvenience of poor mass production, the surface to be coated is exposed to a residual gas atmosphere during the time when no film is being formed, so when the next film layer is formed on that E, impurity gas may be present in the gap between the layers. Mixing the molecule causes the inconvenience of I7 winning. Furthermore, although it is basically possible to create a multilayer laminated film using a manufacturing apparatus having such a configuration, it is not possible to create a composition-modulated film in which the composition changes continuously in the film thickness direction.

On the other hand, with the pass-through sputtering apparatus shown in Figure 2, films can be formed continuously as the substrate moves through the position facing the cathode, but it is not possible to create multilayered films or compositionally modulated films. Can not.

The present invention solves the above-mentioned problems and inconveniences, and has a simple mechanism, allows continuous film formation without stopping sputtering, reduces the amount of impurity gas molecules incorporated, and can also create compositionally modulated films. The purpose of this invention is to provide a sputtering device that can be used.

(Means for Solving the Problems) In the present invention, a sputter cathode equipped with a target is provided in a vacuum chamber, and a film is formed on the substrate while moving the film forming region facing the target. In this method, each target of a plurality of sputter cathodes is provided to face one growth region, and an independent sputter power supply is connected to each sputter cathode, and its output is synchronized with the sputter power supply to perform arbitrary processing. The above object is achieved by providing means for controlling the waveform. In this case, it is preferable to provide an arbitrary waveform oscillator as means for controlling the output of the sputtering power source.

(Operation) A substrate held by a substrate holder is moved to a film forming area facing a target provided in a vacuum chamber, and a sputtered film is formed on the substrate. targets are provided, each sputter cathode is connected to an independent sputter power source, and the power output can be synchronously controlled to an arbitrary waveform by, for example, an arbitrary waveform generator, so that the substrate can be By controlling the speed at which the film passes through the film forming region, the output of each power source, and the output time, it is possible to form a multilayer film on the substrate while controlling the film thickness of each layer. By changing the output waveform, the state of compositional modulation of the film is controlled, and a compositionally modulated film can be formed on the substrate.

Incidentally, it is preferable that each target be tilted inward to each other so as to have an angle with respect to the substrate so as to prevent uneven composition distribution of the film formed on the substrate as much as possible.

(Embodiment) An embodiment of the present invention will be explained based on FIG. 3. In the figure, reference numeral (1) is an evacuated vacuum chamber, (2) is a sputter cathode equipped with a target (3), (4) shows a substrate for a magneto-optical disk made of polycarbonate, for example, which is attached to a substrate holder (5) and moves in a film forming area (6) facing a target (3) in a vacuum chamber (1). In the example, two sputter cathodes (2) are provided,
By tilting each sputter cathode (2a) (2b) inwardly relative to each other, its respective target (3a) (3b)
) was made to face one film forming region (6). When producing a magneto-optical disk, for example, a 90% Fe-10% Co alloy is used as one target (3a), and Tb is used as the other target (3b).

(7a) (7b) are each sputter cathode (2a) (
2b) a sputtering power supply that supplies sputtering power to each of the above;
(8a) (8b) shows means for controlling the output of each sputtering power source (7a) (7b) to an arbitrary waveform in synchronization as shown in FIGS. 4 to 6, and each means (8a) (8b)
) is composed of, for example, an arbitrary waveform oscillator controlled by a trigger signal generator (9). ('IO is a grounded bulletin board.

In the apparatus shown in Figure 3, 90% F is applied to the cathode (2a).
Grid type target of e-10%Co alloy (3a)
and a Tb target (3b) on the cathode (2b).
) was used to create a magneto-optical disk. Each cathode (
2a) A magnetron cathode was used for (2b), and a DC power supply was used for the power supply (7a) and (7b).

Then, the arbitrary waveform oscillators (8a) (8b) caused the power supplies (7a) (7b) to output DC waveforms as shown in Figure 5, and applied them to the cathodes (2a>(2b)).

Both cathodes (2a) and (2b) have rectangular dimensions of 3 inches by 8 inches. As shown by A in FIG. 5, a 1.51 V, 1 second rectangular wave was applied to the cathode (2a) with a 1 second rest period in between. In addition, the cathode (2b) has a 0.4KW power as shown by B in Figure 5.
, A 1-second square wave was applied with a 1-second rest period in between, and the phase of each square wave was shifted by 180''.
For 4), a polycarbonate magneto-optical disk substrate on which 700 SINx films were deposited was used, and this was
The film was moved through the film forming region (6) facing the targets (3a) and (3b) at a transport speed of n+in.

After this passage, PeC is deposited on the SiNx film of the substrate (4).
A multilayer laminated film of o/Tb was formed, and after the formation, a SINx film was separately formed thereon as a protective film to obtain a magneto-optical disk.

The PeCo/Tb multilayer film produced in this way is
There were about 12 people in the PeCo layer and about 3 people in the Tb layer.

This film exhibited perpendicular magnetic anisotropy, had a coercive force measured in the perpendicular direction of 12 K Oersteds, had a Kerr rotation angle of 25'', and exhibited good magneto-optical properties.

Furthermore, if a sinusoidal waveform as shown in Fig. 6 is outputted from the power supply (7a) (7b) by the control operation of the arbitrary waveform oscillator means <8a) (8b), a composition modulated film can be obtained, and the sinusoidal waveform Under the same conditions as above except for the output, SI
A FeCo/Tb film is formed on the polycarbonate magneto-optical disk substrate (4) having an Nx film, and an S
An INx film was formed as a protective film for 700 people. in this case,
The cathode (2a) has a maximum value of 1 as shown by C in Figure 6.
．． A sine waveform output of 5KW for 1 second was given to the cathode (2b), and a sine waveform output of a maximum value of 0.4KW for 1 second as shown by D was given to the cathode (2b) with a phase shift angle of 180' from C.

As a result, the PeCo/Tb film formed on the substrate (4) gradually increases in its composition from 100% FeCo to 100% FeCo, and eventually becomes 100% Tb with 0% PeCo.
It was a compositionally modulated film in which the composition was 00%, and then the FeCo component gradually increased and the Tb composition decreased to 0%. This film also exhibited good magneto-optical properties like the FeCo/Tb multilayer laminate film.

The illustrated example shows a case where two sputter cathodes (2) are installed, but the same applies if three or more are installed and each is provided with a power source (7) and a means (8) for controlling its output. It is possible to create multilayer laminated films and compositionally modulated films. In addition, other sputtering methods such as RP sputtering, RF magnetron sputtering, etc. can be performed in the same manner as well as the DC magnetron sputtering shown in the drawings.

(Effects of the Invention) As described above, according to the present invention, a plurality of sputter cathode targets are provided in a vacuum chamber so as to face one film forming area, and each sputter cathode is independently powered. Since we have provided a means to synchronize and control the output waveforms of the respective power supplies, it is possible to continuously deposit multiple layers without using a complicated mechanism or stopping sputtering. Therefore, impurity gas molecules are less likely to be incorporated into the film, and composition-modulated films can also be produced, which is convenient.

[Brief explanation of the drawing]

FIG. 1(A) is a cutaway side view of a conventional example, FIG. 1(B) is a plan view of FIG. 1(A), FIG. 2 is a cutaway side view of another conventional example, and FIG. 3 is a cutaway side view of the present invention. FIGS. 4 to 6 are cross-sectional side views of the embodiment of the present invention, and show diagrams of power output waveforms in the embodiment of the present invention. (1)...Vacuum chamber (2) (2a) (2b)...Sputter cathode (
3) (3a) (8b)...Target (4)...
・Substrate <6)...Film forming area (7a) (7b)...Sputtering power supply (8a) (8b)...Waveform control means patent Applicant: 3 people other than Japan Vacuum Technology Co., Ltd. Figure 3

Claims (1)

[Claims] 1. A sputtering cathode equipped with a target is provided in a vacuum chamber, and a film is formed on the substrate while moving the film forming region facing the target, Each target of a plurality of sputter cathodes is provided to face one film forming area, and an independent sputter power source is connected to each sputter cathode, and means is provided for synchronizing the output with the sputter power source and controlling it to an arbitrary waveform. A sputtering device characterized in that: 2. The sputtering apparatus according to claim 1, further comprising an arbitrary waveform oscillator as means for controlling the output of the sputtering power source.