JPH0223010Y2 - - Google Patents

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Publication number
JPH0223010Y2
JPH0223010Y2 JP1983104693U JP10469383U JPH0223010Y2 JP H0223010 Y2 JPH0223010 Y2 JP H0223010Y2 JP 1983104693 U JP1983104693 U JP 1983104693U JP 10469383 U JP10469383 U JP 10469383U JP H0223010 Y2 JPH0223010 Y2 JP H0223010Y2
Authority
JP
Japan
Prior art keywords
glass
insulating substrate
intermediate layer
inorganic powder
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1983104693U
Other languages
Japanese (ja)
Other versions
JPS6013766U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1983104693U priority Critical patent/JPS6013766U/en
Publication of JPS6013766U publication Critical patent/JPS6013766U/en
Application granted granted Critical
Publication of JPH0223010Y2 publication Critical patent/JPH0223010Y2/ja
Granted legal-status Critical Current

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  • Gas-Filled Discharge Tubes (AREA)
  • Structure Of Printed Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Description

【考案の詳細な説明】 本考案は絶縁基板とその表面に形成された導電
体層との間に機械的ストレスを吸収する中間層を
介在させて、導電体層と絶縁基板との剥離を防止
した基板構造に関する。
[Detailed description of the invention] This invention prevents separation of the conductive layer and the insulating substrate by interposing an intermediate layer that absorbs mechanical stress between the insulating substrate and the conductive layer formed on the surface of the insulating substrate. Regarding the substrate structure.

従来より、ガス放電表示パネルや液晶等に用い
られる電極基板にあつては、第1図に示す如くガ
ラスやセラミツク等の絶縁基板1上に金属ペース
トを所定のパターンに印刷し、これを焼成して導
電体層2を形成しており、この場合、導電体層2
は、上記金属ペース中にガラスバインダーが含有
されていることから、第2図に示す如く、このガ
ラスバインダー2aが溶融沈降して絶縁基板1に
被着し、導電体層2の上層部に金属粉末2bが集
結した構造となつている。上述の導電体層2をそ
のままの状態で電極部A、配線部B等として使用
する場合は問題がないのであるが、これを外部端
子導出部Cと成して、第3図に示す如くハンダ等
の溶融金属4を用いて外部端子5を接続した場合
には、導電体層2が、絶縁基板1から剥離すると
いう現象が発生しやすい。これは、通常、絶縁基
板1と溶融金属4との熱膨張率の差が大きいた
め、溶融金属の温度低下時に於ける収縮に基づく
機械的ストレスによつて、第4図に示す如く、絶
縁基板1の導体層2との接合界面に於いてクラツ
クDが発生し、製造中あるいは使用中の熱的、機
械的衝撃によつてクラツクDが更に進行するため
である。上述の剥離現象は、絶縁基板と溶融金属
との熱膨張係数の差が20×10-7/℃以上の場合に
発生し、この値が大きくなるに従つて、また導電
体層と絶縁基板との接合面積や溶融金属の量が大
きくなる程発生頻度が高くなる。
Conventionally, for electrode substrates used in gas discharge display panels, liquid crystal displays, etc., a metal paste is printed in a predetermined pattern on an insulating substrate 1 made of glass or ceramic, as shown in FIG. 1, and then fired. In this case, the conductor layer 2 is formed by
Since the metal paste contains a glass binder, the glass binder 2a melts and settles and adheres to the insulating substrate 1, as shown in FIG. It has a structure in which the powder 2b is concentrated. There is no problem if the above-mentioned conductive layer 2 is used as it is as an electrode part A, a wiring part B, etc., but if it is used as an external terminal lead-out part C and soldered as shown in FIG. When the external terminal 5 is connected using a molten metal 4 such as the above, the phenomenon that the conductive layer 2 is easily peeled off from the insulating substrate 1 occurs. This is because there is usually a large difference in the coefficient of thermal expansion between the insulating substrate 1 and the molten metal 4, so the mechanical stress caused by the contraction of the molten metal as the temperature drops causes the insulating substrate to expand as shown in FIG. This is because cracks D occur at the bonding interface between conductor layer 1 and conductor layer 2, and the cracks D further progress due to thermal and mechanical shocks during manufacturing or use. The above-mentioned peeling phenomenon occurs when the difference in thermal expansion coefficient between the insulating substrate and the molten metal is 20×10 -7 /°C or more, and as this value increases, the difference between the conductive layer and the insulating substrate also increases. The frequency of occurrence increases as the joint area and amount of molten metal increase.

本考案は以上の点に鑑み成されたもので、絶縁
基板上の導体層に外部端子を接続するに際し、ハ
ンダ等の溶融金属の有する種々の長所(接続の確
実性、作業の容易性、価格の低廉性等)を活かす
べく、溶融金属と絶縁基板との熱膨張係数の差が
20×10-7/℃以上の場合に於いても、導体層と絶
縁基板との剥離を防止できる基板構造を提供する
ことを目的とする。
The present invention was developed in view of the above points, and it is useful to utilize the various advantages of molten metal such as solder (reliability of connection, ease of work, cost, The difference in thermal expansion coefficient between the molten metal and the insulating substrate is
An object of the present invention is to provide a substrate structure that can prevent separation of a conductor layer and an insulating substrate even at temperatures of 20×10 -7 /°C or higher.

以上の目的を達成するため、導体層と絶縁基板
間に機械的ストレスを吸収するための中間層を介
在させた基板構造を案出し、更にその構成を種々
検討の結果、コンクリートの構成中にセメントと
砂だけでなく、小石を混合することによつて、そ
の機械的強度を増大させている点に着目して本考
案を完成させたものである。即ち、本考案の基板
構造は、絶縁基板上に形成した導電体層と上記絶
縁基板との間にガラス結晶を含有する結晶化ガラ
ス又は無機粉体を混合した非結晶化ガラスより成
る中間層を介在させたことを特徴とするものであ
り、以下図面に基づいて本考案の一実施例を説明
する。
In order to achieve the above objectives, we devised a substrate structure in which an intermediate layer was interposed between the conductor layer and the insulating substrate to absorb mechanical stress, and as a result of various studies on the structure, we found that cement was added to the structure of the concrete. The present invention was developed by focusing on the fact that by mixing not only sand and pebbles, its mechanical strength is increased. That is, the substrate structure of the present invention includes an intermediate layer made of crystallized glass containing glass crystals or amorphous glass mixed with inorganic powder between the conductive layer formed on the insulating substrate and the insulating substrate. An embodiment of the present invention will be described below based on the drawings.

第5図は本考案の一実施例に係る基板構造をガ
ス放電表示パネルの基板に適用した要部斜視図で
あり、第6図はその断面図である。図に於いて、
ガス放電表示パネルの電極部A及び配線部Bはガ
ラスやセラミツク等より成る絶縁基板1に導電体
層2が直接被着されて形成されており、また外部
端子導出部Cは本考案の特徴である中間層3を介
して絶縁基板1上に形成されている。
FIG. 5 is a perspective view of a main part of a substrate structure of an embodiment of the present invention applied to a substrate of a gas discharge display panel, and FIG. 6 is a sectional view thereof. In the figure,
The electrode section A and the wiring section B of the gas discharge display panel are formed by directly adhering a conductor layer 2 to an insulating substrate 1 made of glass, ceramic, etc., and the external terminal lead-out section C is a feature of the present invention. It is formed on an insulating substrate 1 with a certain intermediate layer 3 interposed therebetween.

上記中間層3は、含有するガラス結晶3aの大
きさが1乃至20μmで結晶化率が20乃至70%の結
晶化粉末ガラスペースト又は大きさが1乃至
20μmの無機粉体3aを20乃至70%(容量比)混
合したホウケイ酸鉛ガラス等の非結晶化粉末ガラ
スペーストを絶縁基板1上に厚膜印刷した後、焼
成して厚さ1乃至50μmの層として被着したもの
である。更に上記中間層3上に粉末ガラスバイン
ダーとAg、Ag−pd等の金属粉末を含有する金属
ペーストを印刷して焼成することにより、ガラス
バインダー2aが溶融沈降して中間層3に被着
し、一方、金属粉末2bが表面に集結して導体層
2が形成される。尚、上記無機粉体3aは、混合
される非結晶ガラスよりも融点が高く、且つ上記
融点では分解しない絶縁物が適しており、例え
ば、Al2O3Cr2O3、MgO等が好適に使用し得る。
また、ガラス結晶又は無機粉体の大きさ及び含有
率並びに中間層の厚さは、使用する溶融金属と絶
縁基板との熱膨張係数の差、導体層と絶縁基板と
の接合面積、溶融金属の量及び要求される剥離強
度等により、上述した範囲内で適宜選定される。
The intermediate layer 3 may be a crystallized powder glass paste containing glass crystals 3a having a size of 1 to 20 μm and a crystallinity of 20 to 70%, or a crystallized powder glass paste containing glass crystals 3a having a size of 1 to 20 μm and a crystallinity of 20 to 70%.
After printing a thick film of amorphous powder glass paste such as lead borosilicate glass containing 20 to 70% (volume ratio) of inorganic powder 3a of 20 μm on the insulating substrate 1, it is fired to form a paste with a thickness of 1 to 50 μm. It is applied as a layer. Furthermore, by printing and firing a powdered glass binder and a metal paste containing metal powder such as Ag or Ag-PD on the intermediate layer 3, the glass binder 2a melts and settles and adheres to the intermediate layer 3, On the other hand, the metal powder 2b gathers on the surface to form the conductor layer 2. The inorganic powder 3a is preferably an insulating material that has a higher melting point than the amorphous glass to be mixed and does not decompose at the above melting point, such as Al 2 O 3 Cr 2 O 3 , MgO, etc. Can be used.
In addition, the size and content of the glass crystal or inorganic powder and the thickness of the intermediate layer are determined by the difference in thermal expansion coefficient between the molten metal and the insulating substrate, the bonding area between the conductor layer and the insulating substrate, and the thickness of the molten metal. It is appropriately selected within the above-mentioned range depending on the amount and required peel strength.

しかして、第7図に示す如く、導体層2に絶縁
基板1との熱膨張係数の差が20×0-7/℃以上で
あるハンダ等の溶融金属4によつて外部端子5を
接続すれば、溶融金属4が温度低下時に収縮して
機械的ストレスが加わり、第8図に示す如く、中
間層3にクラツクDが入いる。ところが上記中間
層3中にはガラス結晶や無機粉体3aが存在して
いるため、クラツクDはガラス結晶や無機粉体3
aに到達した時点で停止し、それ以上進行するこ
とはない。尚、上述の実施例に於いては、ガス放
電表示パネルの基板に適用した例を示したが、こ
れに限られることなく、液晶やの他の電極基板等
に広く適用し得るものである。又、上述した導電
体層は、金属粉末をガラスバインダーによつて中
間層に被着した例を示したが、プラズマ溶射や蒸
着等によつて直接被着した導体層に対しても同様
の効果を奏するものである。
As shown in FIG. 7, an external terminal 5 is connected to the conductor layer 2 with a molten metal 4 such as solder having a thermal expansion coefficient difference of 20×0 -7 /°C or more with the insulating substrate 1. For example, the molten metal 4 contracts when the temperature decreases and mechanical stress is applied, causing a crack D in the intermediate layer 3 as shown in FIG. However, since glass crystals and inorganic powder 3a are present in the intermediate layer 3, the crack D is caused by glass crystals and inorganic powder 3a.
When it reaches point a, it stops and does not proceed any further. In the above-mentioned embodiment, an example was shown in which the present invention was applied to a substrate of a gas discharge display panel, but the present invention is not limited to this, and can be widely applied to other electrode substrates such as liquid crystals. In addition, although the above-mentioned conductor layer is an example in which metal powder is applied to the intermediate layer using a glass binder, the same effect can be obtained for a conductor layer that is directly applied by plasma spraying, vapor deposition, etc. It is something that plays.

以上述べた如く、本考案の基板構造は、ガラス
結晶や無機粉体を含有するガラス媒質より成る中
間層を絶縁基板と導体層との間に介在させている
ので、ハンダ付け等による機械的ストレスによつ
て中間層にクラツクが入いつても、ガラス結晶や
無機粉体によつてその進行が停止するため、導体
層と絶縁基板との剥離を確実に防止できる。
As described above, the substrate structure of the present invention has an intermediate layer made of a glass medium containing glass crystals or inorganic powder interposed between the insulating substrate and the conductor layer, so it is not susceptible to mechanical stress caused by soldering etc. Even if a crack occurs in the intermediate layer due to this, the progress of the crack is stopped by the glass crystals and inorganic powder, so separation between the conductive layer and the insulating substrate can be reliably prevented.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の基板構造を示す要部斜視図、第
2図は第1図の断面図、第3図は第1図の外部端
子導出部に外部端子を接続した状態を示す横断面
図、第4図は第3図の縦断面図であり、第5図は
本考案の基板構造を示す要部斜視図、第6図は第
5図の断面図、第7図は第5図の外部導出部に外
部端子を接続した状態を示す断面図、第8図は第
7図の部分拡大図である。 1……絶縁基板、2…導電体層、3……中間
層、3a……ガラス結晶又は無機粉体。
Fig. 1 is a perspective view of the main parts showing a conventional board structure, Fig. 2 is a sectional view of Fig. 1, and Fig. 3 is a cross-sectional view showing a state in which external terminals are connected to the external terminal lead-out portions of Fig. 1. , FIG. 4 is a vertical sectional view of FIG. 3, FIG. 5 is a perspective view of the main part showing the substrate structure of the present invention, FIG. 6 is a sectional view of FIG. 5, and FIG. 7 is a cross-sectional view of FIG. 5. FIG. 8 is a cross-sectional view showing a state in which the external terminal is connected to the external lead-out portion, and FIG. 8 is a partially enlarged view of FIG. 7. DESCRIPTION OF SYMBOLS 1...Insulating substrate, 2...Conductor layer, 3...Intermediate layer, 3a...Glass crystal or inorganic powder.

Claims (1)

【実用新案登録請求の範囲】 (1) 絶縁基板上に形成した導電体層と上記絶縁基
板との間にガラス結晶を含有する結晶化ガラス
又は無機粉体を混合した非結晶化ガラスより成
る中間層を介在させたことを特徴とする基板構
造。 (2) 結晶化ガラスの結晶化率又は無機粉体の混合
率が20乃至70%であることを特徴とする実用新
案登録請求の範囲第1項に記載の基板構造。 (3) ガラス結晶又は無機粉体の大きさが1乃至
20μmであることを特徴とする実用新案登録請
求の範囲第1項又は第2項に記載の基板構造。 (4) 中間層の厚さが5乃至50μmであることを特
徴とする実用新案登録請求の範囲第1項乃至第
3項の何れかに記載の基板構造。
[Claims for Utility Model Registration] (1) An intermediate layer made of crystallized glass containing glass crystals or amorphous glass mixed with inorganic powder between the conductive layer formed on an insulating substrate and the above insulating substrate. A substrate structure characterized by intervening layers. (2) The substrate structure according to claim 1, wherein the crystallization rate of crystallized glass or the mixing ratio of inorganic powder is 20 to 70%. (3) The size of the glass crystal or inorganic powder is 1 to 1
The substrate structure according to claim 1 or 2 of the utility model registration claim, characterized in that the thickness is 20 μm. (4) The substrate structure according to any one of claims 1 to 3, wherein the intermediate layer has a thickness of 5 to 50 μm.
JP1983104693U 1983-07-06 1983-07-06 Board structure Granted JPS6013766U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1983104693U JPS6013766U (en) 1983-07-06 1983-07-06 Board structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1983104693U JPS6013766U (en) 1983-07-06 1983-07-06 Board structure

Publications (2)

Publication Number Publication Date
JPS6013766U JPS6013766U (en) 1985-01-30
JPH0223010Y2 true JPH0223010Y2 (en) 1990-06-21

Family

ID=30245717

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1983104693U Granted JPS6013766U (en) 1983-07-06 1983-07-06 Board structure

Country Status (1)

Country Link
JP (1) JPS6013766U (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5773630B2 (en) * 2010-12-03 2015-09-02 京セラ株式会社 Light-emitting element mounting substrate and manufacturing method thereof
US9006582B2 (en) * 2012-03-14 2015-04-14 Ngk Spark Plug Co., Ltd. Ceramic substrate and process for producing same

Also Published As

Publication number Publication date
JPS6013766U (en) 1985-01-30

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