JPH0222461A - Film forming device - Google Patents

Film forming device

Info

Publication number
JPH0222461A
JPH0222461A JP17038088A JP17038088A JPH0222461A JP H0222461 A JPH0222461 A JP H0222461A JP 17038088 A JP17038088 A JP 17038088A JP 17038088 A JP17038088 A JP 17038088A JP H0222461 A JPH0222461 A JP H0222461A
Authority
JP
Japan
Prior art keywords
cathode
chamber
film
sheet
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17038088A
Other languages
Japanese (ja)
Inventor
Hidemi Nakai
日出海 中井
Katsuhisa Enjoji
勝久 円城寺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Sheet Glass Co Ltd
Original Assignee
Nippon Sheet Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Sheet Glass Co Ltd filed Critical Nippon Sheet Glass Co Ltd
Priority to JP17038088A priority Critical patent/JPH0222461A/en
Publication of JPH0222461A publication Critical patent/JPH0222461A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To stably form the coating film of a metal oxide for a long time by providing a metallic sheet electrically connected to a chamber on the inner wall surface opposed to a cathode in the chamber, and continuously traveling the metallic sheet. CONSTITUTION:A Zr vapor-deposition device 10 is fixed on the arc vapor- deposition cathode 6, and a glass substrate 20 is placed on a conveyor belt 17 and set in a cell 2. The cells 2, 3, and 4 of a grounded vacuum vessel 1 are depressurized, gate valves 18 and 19 are opened, and gaseous Ar and gaseous O2 are introduced from a supply pipe 11 to hold the cells at a specified pressure. A current is successively applied to the cathode 6 and a trigger 12 from a power source 7, and an arc discharge is started. The Al sheet 16 electrically connected to the vacuum vessel 1 is simultaneously traveled in direction of the arrow by rolls 14 and 15, and the film of zirconium oxide is formed on the glass substrate 20 sent into the cell 4, and the substrate is discharged from the cell 4. By this method, an arc discharge can be stably kept between the Al sheet 16 and the cathode 6, and a dielectric coating film can be stably formed for a long time.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は特にアーク蒸着により、基材上に被膜を形成す
る場合に用いて好適な成膜装置に関し、例えば減圧され
たチェンバー内で建築用、自動車用のガラス基板上に、
長時間にわたって安定的に酸化物被膜を形成する場合等
に用いられる。
[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to a film forming apparatus suitable for use in forming a film on a substrate by arc evaporation, for example, in a vacuum chamber. , on an automotive glass substrate,
It is used when forming an oxide film stably over a long period of time.

〔発明の概要〕[Summary of the invention]

本発明は、チェンバー内壁の陰極と対向する少くとも一
つの面において、アルミニウム等の金属シートを送るよ
うにしたことにより、被膜の形成を安定に行うことがで
きるようにしたものである。
In the present invention, a metal sheet such as aluminum is fed on at least one surface of the inner wall of the chamber facing the cathode, thereby making it possible to form a film stably.

〔従来の技術〕[Conventional technology]

アーク蒸着による成膜装置及び成膜方法としては、A、
5naperらによって開示された米国特許第3,62
5,848号公報あるいはり、5ablevらによって
開示された米国特許第3,783,231号公報、同第
3,793.179号公報等に記載された技術が知られ
ている。これらの技術は被膜となる材料を陰極としてチ
ェンバー内に設置し、この陰極とチエンバーあるいは陰
極と陽極間に低電圧アーク放電を生起させて陰極材料を
蒸発させることにより、チェンバー内においた基板に被
膜を形成するものである。通常ではアーク電流は大電流
で、例えば50A以上であり、このアーク電流が陰極上
のスポットに集中して極めて高温になり、これにより陰
極材料が蒸発するという原理を利用している。
Film forming apparatuses and film forming methods using arc evaporation include A,
U.S. Pat. No. 3,62 disclosed by Naper et al.
The techniques described in US Pat. No. 5,848, US Pat. No. 3,783,231, US Pat. In these technologies, a material to be coated is placed in a chamber as a cathode, and a low-voltage arc discharge is generated between the cathode and the chamber or between the cathode and anode to evaporate the cathode material, thereby coating the substrate placed in the chamber. It forms the Usually, the arc current is a large current, for example, 50 A or more, and the principle is used that this arc current concentrates on a spot on the cathode and becomes extremely high temperature, which causes the cathode material to evaporate.

この技術は上記のアークスポットが陰極が陰極の表面を
ランダムに均一に動き回るので、大面積の基板上に非常
に高速度で被膜を形成できるという利点をもっている。
This technique has the advantage that the arc spot moves randomly and uniformly over the surface of the cathode, allowing coatings to be formed on large area substrates at very high speeds.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら上記従来のアーク蒸着による成膜装置では
、長時間にわたって安定的に誘電体被膜を形成できない
という重大な問題点があった。即ち、従来のアーク蒸着
による成膜装置を用いて誘電体被膜を形成する場合は、
成膜を連続的に行うにつれてチェンバーの内壁にも誘電
体被膜が形成されてしまい、これによって次第に抵抗が
高くなり、ついには50A以上のアーク電流を安定的に
通電させることが困難になり、このため放電が極めて不
安定になって、チェンバーの内壁に蓄積された電荷によ
る異常放電の発生や、チェンバーの一部に電流が集中す
るアノードスポットの発生による装置の損傷といった重
大な問題点があった。
However, the above-mentioned conventional film forming apparatus using arc evaporation has a serious problem in that a dielectric film cannot be stably formed over a long period of time. That is, when forming a dielectric film using a film forming apparatus using conventional arc evaporation,
As film formation continues, a dielectric film is also formed on the inner wall of the chamber, which gradually increases the resistance, eventually making it difficult to stably conduct an arc current of 50 A or more. As a result, the discharge became extremely unstable, causing serious problems such as abnormal discharge caused by the charge accumulated on the inner wall of the chamber, and damage to the equipment due to the occurrence of an anode spot where the current was concentrated in a part of the chamber. .

〔課題を解決するための手段〕[Means to solve the problem]

上記従来の問題点を解決するために、本発明はチェンバ
ー内で、被膜材料をセットされた陰極とチェンバーとの
間で低電圧アーク放電等の放電を行うことによって被I
llを形成する成膜装置において、上記チェンバーの上
記陰極に対向する内壁の少くとも一つの面上に、このチ
ェンバーと電気的に接続された金属シートを連続的に送
るような機構を設けたものである。
In order to solve the above-mentioned problems of the conventional art, the present invention provides a method for discharging the I.I.
A film forming apparatus for forming ll, which is provided with a mechanism for continuously feeding a metal sheet electrically connected to the chamber on at least one surface of the inner wall of the chamber facing the cathode. It is.

本発明に使用できる金属シートの材料としては、アルミ
ニウムを初めとして、銅やステンレスなどがある。
Materials for the metal sheet that can be used in the present invention include aluminum, copper, stainless steel, and the like.

〔作用〕[Effect]

成膜を行うチェンバーの内壁のうち陰極に対向する少く
とも一つの面上でこのチェンバーと電気的に接続された
金属シートが連続的に送られるので、絶えず大面積の良
導性の表面が得られ、これによって金属シートと陰極と
の間でアーク放電を維持するための数10乃至数100
Aの電流を安定的に通電するための面積を確保する作用
が発揮され、誘電体被膜を長時間安定的に形成すること
が可能になる。
Since a metal sheet electrically connected to the chamber is continuously fed onto at least one surface of the inner wall of the chamber where the film is formed, facing the cathode, a large area of a highly conductive surface is constantly obtained. 10 to 100 to maintain arc discharge between the metal sheet and the cathode.
The effect of securing an area for stably passing the current A is exerted, and it becomes possible to form a dielectric film stably for a long period of time.

〔実施例〕〔Example〕

以下に本発明の実施例を添付図面に基いて説明する。 Embodiments of the present invention will be described below with reference to the accompanying drawings.

図面は本発明に基く真空アーク蒸着による成膜装置の実
施例を示す。図において、この装置は第1〜3の室2.
3.4からなる一体のアースされた真空装置1を基礎構
造としている。この真空槽1の第2の室3の底部には、
電気絶縁体5を介してアーク放電用カソード6が設置さ
れ、このカソード6は直流電源7にスイッチ8を介して
接続されている。また上記底部を貫通してパルプ9を備
えたガス供給管11が設置されている。さらにアーク放
電を生起させるためのトリガー12がスイッチ13を介
して直流電源7に接続されている。
The drawings show an embodiment of a vacuum arc deposition film forming apparatus according to the present invention. In the figure, this device has first to third chambers 2.
The basic structure is an integral grounded vacuum device 1 consisting of 3.4. At the bottom of the second chamber 3 of this vacuum chamber 1,
An arc discharge cathode 6 is installed via an electrical insulator 5, and this cathode 6 is connected to a DC power source 7 via a switch 8. Further, a gas supply pipe 11 provided with pulp 9 is installed passing through the bottom portion. Further, a trigger 12 for causing arc discharge is connected to the DC power source 7 via a switch 13.

また真空槽lの第2の室3の上部には、本発明により、
一対の回転可能なローラー14.15が設けられている
。これらのローラー14.15の間には、アルミニウム
製のシート16が巻回されている。このシート16を矢
印方向に送るように、ローラー14.15にはモーター
(図示せず)が取付けられている。このモーターの回転
速度は、0.1m/分の速度でシート16が送られるよ
うに設定されている。アルミニウム製のシート16は適
当な手段を介して真空槽lに電気的に接続されており、
且つ約12mの長さでローラー14に巻かれており、一
端をローラー15に接続され、徐々に巻き取られ、最後
的にはローラー15にすべて巻き取られるように成され
ている。リレースイッチ(図示せず)によって、放電を
生起している間だけ、即ら、スイッチ8がオンの状態の
ときのみに、ローラー14.15が回転してシート16
が巻き取られるように成されている。
Further, according to the present invention, in the upper part of the second chamber 3 of the vacuum chamber l,
A pair of rotatable rollers 14.15 is provided. An aluminum sheet 16 is wound between these rollers 14,15. A motor (not shown) is attached to the rollers 14, 15 to feed the sheet 16 in the direction of the arrow. The rotational speed of this motor is set so that the sheet 16 is fed at a speed of 0.1 m/min. The aluminum sheet 16 is electrically connected to the vacuum chamber l via suitable means,
It is wound around a roller 14 with a length of about 12 m, and one end is connected to a roller 15 so that it is gradually wound up and finally completely wound up on the roller 15. By means of a relay switch (not shown), the rollers 14,15 are rotated to move the sheet 16 only while the discharge is occurring, i.e. only when the switch 8 is in the on state.
It is made so that it can be wound up.

真空槽1の内部には搬送ベルト17が設置されており、
ガラス基板20がこの搬送ベルトに乗ってカソード」−
6を通過する間に被膜が形成されるように成されている
。形成すべき被膜の厚味は搬送ヘルド17の移動速度を
調節することにより調節される。ガラス基板20の各室
2.3.4間の移動を行うために、ゲートバルブ18.
19を開閉することによって上記移動が可能となるよう
な機構が備えられている。
A conveyor belt 17 is installed inside the vacuum chamber 1.
The glass substrate 20 is carried on this conveyor belt to form a cathode.
6, a coating is formed during the passage. The thickness of the coating to be formed is adjusted by adjusting the moving speed of the conveyor heald 17. In order to move the glass substrate 20 between the chambers 2.3.4, a gate valve 18.
A mechanism is provided that enables the above movement by opening and closing 19.

以上の如き構成の成膜装置を用いて誘電体被膜を形成す
る方法を、酸化ジルコニウム被膜の形成を例にとって以
下に述べる。
A method for forming a dielectric film using the film forming apparatus configured as described above will be described below, taking the formation of a zirconium oxide film as an example.

まずアーク蒸着用カソード6の上面にZrを蒸着装置1
0として取付ける。またガラス基板20を搬送ベルト1
7に乗せ第1の室2にセットする。
First, Zr is deposited on the top surface of the cathode 6 for arc evaporation using the evaporation device 1.
Install it as 0. In addition, the glass substrate 20 is transferred to the conveyor belt 1.
7 and set it in the first chamber 2.

次に真空槽】のすべての室2.3.4を1O−3Paま
で減圧した後、ゲートバルブ18.19を開ける。次い
でバルブ9を開けて真空槽1内にアルゴンガ、2.50
SCCMと酸素ガス503CCMとを導入する。この時
、真空槽l内の圧力を10−’Paに調節した。そして
スイッチ8をオンにし、次いでトリガー12のスイッチ
13をオンにして、カソード6に10OAの電流を流し
、アーク放電を開始した。この時、放電電圧は21Vで
あった。
Next, after reducing the pressure in all chambers 2.3.4 of the vacuum chamber to 10-3 Pa, open the gate valve 18.19. Next, open the valve 9 and add 2.50 argon gas into the vacuum chamber 1.
Introduce SCCM and 503 CCM of oxygen gas. At this time, the pressure inside the vacuum chamber 1 was adjusted to 10-'Pa. Then, the switch 8 was turned on, and then the switch 13 of the trigger 12 was turned on, and a current of 10 OA was passed through the cathode 6 to start arc discharge. At this time, the discharge voltage was 21V.

その後、搬送ベルト17を100mm/分の速度で走行
させて、ガラス基板20を真空槽1の第2の室3の方向
に搬送し、カソード6の上を通過させた後、第3の室4
に到達させた。そしてガス供給管のバルブ9を閉し、カ
ソード6のスイッチ8をオフとして放電を停止し、次い
でゲートバルブ18.19を閉とした。このようにして
酸化ジルコニウム被膜が形成されたガラス基板2oを、
真空槽1の第3の室4を大気厚に戻した後、扉をあけて
取り出した。
Thereafter, the conveyor belt 17 is run at a speed of 100 mm/min to convey the glass substrate 20 in the direction of the second chamber 3 of the vacuum chamber 1, and after passing over the cathode 6, the glass substrate 20 is transferred to the third chamber 4.
reached. Then, the valve 9 of the gas supply pipe was closed, the switch 8 of the cathode 6 was turned off to stop the discharge, and then the gate valves 18 and 19 were closed. The glass substrate 2o on which the zirconium oxide film was formed in this way,
After returning the third chamber 4 of the vacuum chamber 1 to atmospheric pressure, the door was opened and the chamber was taken out.

以上のような手順を5回繰り返して、5枚の酸化ジルコ
ニウム被膜を形成したガラス基板2oを連続的に得た。
The above procedure was repeated five times to continuously obtain five glass substrates 2o on which zirconium oxide films were formed.

5回目の成膜操作において、放電電圧約22Vであり、
1回目の成膜時の放電電圧約21Vと比べてほとんど同
等で、実質上回の異常放電も発生せず、臘めて安定的に
酸化ジルコニウム被膜を得ることができた。このように
して得られた酸化ジルコニウム被膜はほぼ完全に透明で
あり、表面粗さ計によって測定した膜厚は約1900人
〜2200人の範囲であった。真空槽1の第2の室3の
扉を開けてシート16の状態を調べたところ、約1/3
のシートがローラー14からローラー15へ送られてい
た。
In the fifth film forming operation, the discharge voltage was about 22V,
The discharge voltage was almost the same as the discharge voltage of about 21 V during the first film formation, and no abnormal discharge occurred which was substantially higher than that, and it was possible to stably obtain a zirconium oxide film. The zirconium oxide coating thus obtained was almost completely transparent, and the film thickness as measured by a surface roughness meter was in the range of approximately 1900 to 2200 mm. When the door of the second chamber 3 of the vacuum chamber 1 was opened and the state of the sheet 16 was examined, it was found that about 1/3
sheets were being sent from roller 14 to roller 15.

図面は、本発明の実施例による真空アーク蒸着を用いた
成膜装置の断面側面図である。
The drawing is a cross-sectional side view of a film forming apparatus using vacuum arc evaporation according to an embodiment of the present invention.

なお図面に用いた符号において、 6−・−・・・−・−・−アーク放電用カソード14.
15 −−−−一一一一−ローラー16−一−−−・−
−−−一−−−−アルミニウムシート20−−−−−一
−−−−−−−−ガラス基板である。
In addition, in the symbols used in the drawings, 6-------- Arc discharge cathode 14.
15 ----1111-Roller 16-1----
---1--Aluminum sheet 20--1--------Glass substrate.

Claims (2)

【特許請求の範囲】[Claims] (1)、チェンバー内で、被膜材料がセットされた陰極
と上記チェンバーとの間で放電を行うことにより、上記
陰極に対向する位置にある基材上に被膜を形成する成膜
装置において、上記チェンバーの上記陰極と対向する内
壁の少くとも一つの面上で、上記チェンバーに電気的に
接続された金属シートを連続的に送る手段を設けたこと
を特徴とする成膜装置。
(1) In a film forming apparatus that forms a film on a base material located at a position facing the cathode by causing an electric discharge between the cathode on which a film material is set and the chamber, A film forming apparatus characterized in that means is provided for continuously feeding a metal sheet electrically connected to the chamber on at least one surface of the inner wall of the chamber facing the cathode.
(2)、上記金属シートがアルミニウム、銅、ステンレ
スである特許請求の範囲第1項記載の成膜装置。
(2) The film forming apparatus according to claim 1, wherein the metal sheet is aluminum, copper, or stainless steel.
JP17038088A 1988-07-08 1988-07-08 Film forming device Pending JPH0222461A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17038088A JPH0222461A (en) 1988-07-08 1988-07-08 Film forming device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17038088A JPH0222461A (en) 1988-07-08 1988-07-08 Film forming device

Publications (1)

Publication Number Publication Date
JPH0222461A true JPH0222461A (en) 1990-01-25

Family

ID=15903864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17038088A Pending JPH0222461A (en) 1988-07-08 1988-07-08 Film forming device

Country Status (1)

Country Link
JP (1) JPH0222461A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5202272A (en) * 1991-03-25 1993-04-13 International Business Machines Corporation Field effect transistor formed with deep-submicron gate
JP2005150118A (en) * 2003-11-18 2005-06-09 Unaxis Balzer Ag Ignition device, electrical arc evaporator and processing method of workpieces

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5202272A (en) * 1991-03-25 1993-04-13 International Business Machines Corporation Field effect transistor formed with deep-submicron gate
JP2005150118A (en) * 2003-11-18 2005-06-09 Unaxis Balzer Ag Ignition device, electrical arc evaporator and processing method of workpieces

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